CN103792799A - New LED photoetching development process - Google Patents
New LED photoetching development process Download PDFInfo
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- CN103792799A CN103792799A CN201210447726.0A CN201210447726A CN103792799A CN 103792799 A CN103792799 A CN 103792799A CN 201210447726 A CN201210447726 A CN 201210447726A CN 103792799 A CN103792799 A CN 103792799A
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Abstract
The invention relates to a new LED photoetching development process which is characterized by comprising the following steps: filling a developing tank with developing solutions: two parts of 0.8% sodium hydroxide solution and two parts of 2.38% tetramethyl ammonium hydroxide aqueous solution; setting the parameters of a developer and swinging a swing arm of the developer up and down; placing wafers on a flower basket, putting the flower basket full of the wafers on the swing arm of the developer, and shaking in the developing solution; developing the N electrode with the 0.8% sodium hydroxide solution; developing ITO with 0.8% sodium hydroxide solution; developing the P and N electrodes with 2.38% tetramethyl ammonium hydroxide aqueous solution; taking the wafer out of the developing tank and cleaning with deionized water in a cleaning tank so that the water resistance reaches 5M(omega)*cm; and drying with a hot nitrogen dryer. The process disclosed by the invention is simple to operate, controls the developing process accurately and can effectively reduce the phenomenon of halfway or excessive developing.
Description
Technical field
The present invention relates to a kind of new LED photoetching development technique, belong to LED production field.
Background technology
LED industry is one of very important microelectronic in field in current new and high technology, and in LED processing procedure, needing to utilize photoetching development, technology in the past, due to defective workmanship, in developing process, cannot accurately control, cause developing thoroughly or occurred development phenomenon.
Summary of the invention
The present invention is directed to deficiency, a kind of new LED photoetching development technique is provided.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of new LED photoetching development technique, it is characterized in that, and described method step is as follows:
(1) first in developing trough, pile developer solution, each two parts of 0.8% sodium hydroxide solution and 2.38% tetramethylammonium hydroxide aqueous solution, set developing machine parameter, allows developing machine swing arm swing up and down;
(2) slice, thin piece is placed on the gaily decorated basket, then the gaily decorated basket of filling slice, thin piece is placed in the swing arm of developing machine, in developer solution, rocks;
(3) with 0.8% sodium hydroxide solution, N electrode is developed: first in first developing trough, develop 30 seconds, photoresist is fully reacted with developer solution, then take out and put into the development of second developing trough and within 20 seconds, allow reactant from wafer surface drops completely, take out bath;
(4) with 0.8% sodium hydroxide solution, ITO is developed: first in first developing trough, develop 20 seconds, photoresist is fully reacted with developer solution, then take out and put into the development of second developing trough and within 15 seconds, allow reactant from wafer surface drops completely, take out bath;
(5) with 2.38% tetramethylammonium hydroxide aqueous solution, P, N electrode are developed: first in first developing trough, develop 20 seconds, photoresist is fully reacted with developer solution, then take out and put into the development of second developing trough and within 20 seconds, allow reactant from wafer surface drops completely, take out bath;
(6) from developing trough, propose to use rinse bath washed with de-ionized water clean, make its water resistance value reach 5M Ω cm;
(7) finally dry up with hot nitrogen dryer.
Further, described hot nitrogen dryer blow-time is: great Tai, little large flow blow 300 seconds, and electric maximum discharge is blown 600 seconds.
The invention has the beneficial effects as follows: the present invention is simple to operate, can control more accurately developing process, effectively reduce and develop thoroughly or cross development phenomenon.
Embodiment
Below principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
A new LED photoetching development technique, is characterized in that, described method step is as follows:
(1) first in developing trough, pile developer solution, each two parts of 0.8% sodium hydroxide solution and 2.38% tetramethylammonium hydroxide aqueous solution, set developing machine parameter, allows developing machine swing arm swing up and down;
(2) slice, thin piece is placed on the gaily decorated basket, then the gaily decorated basket of filling slice, thin piece is placed in the swing arm of developing machine, in developer solution, rocks;
(3) with 0.8% sodium hydroxide solution, N electrode is developed: first in first developing trough, develop 30 seconds, photoresist is fully reacted with developer solution, then take out and put into the development of second developing trough and within 20 seconds, allow reactant from wafer surface drops completely, take out bath;
(4) with 0.8% sodium hydroxide solution, ITO is developed: first in first developing trough, develop 20 seconds, photoresist is fully reacted with developer solution, then take out and put into the development of second developing trough and within 15 seconds, allow reactant from wafer surface drops completely, take out bath;
(5) with 2.38% tetramethylammonium hydroxide aqueous solution, P, N electrode are developed: first in first developing trough, develop 20 seconds, photoresist is fully reacted with developer solution, then take out and put into the development of second developing trough and within 20 seconds, allow reactant from wafer surface drops completely, take out bath;
(6) from developing trough, propose to use rinse bath washed with de-ionized water clean, make its water resistance value reach 5M Ω cm;
(8) finally dry up with hot nitrogen dryer.
Described hot nitrogen dryer blow-time is: great Tai, little large flow blow 300 seconds, and electric maximum discharge is blown 600 seconds.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (2)
1. a new LED photoetching development technique, is characterized in that, described method step is as follows:
(1) first in developing trough, pile developer solution, each two parts of 0.8% sodium hydroxide solution and 2.38% tetramethylammonium hydroxide aqueous solution, set developing machine parameter, allows developing machine swing arm swing up and down;
(2) slice, thin piece is placed on the gaily decorated basket, then the gaily decorated basket of filling slice, thin piece is placed in the swing arm of developing machine, in developer solution, rocks;
(3) with 0.8% sodium hydroxide solution, N electrode is developed: first in first developing trough, develop 30 seconds, photoresist is fully reacted with developer solution, then take out and put into the development of second developing trough and within 20 seconds, allow reactant from wafer surface drops completely, take out bath;
(4) with 0.8% sodium hydroxide solution, IT0 is developed: first in first developing trough, develop 20 seconds, photoresist is fully reacted with developer solution, then take out and put into the development of second developing trough and within 15 seconds, allow reactant from wafer surface drops completely, take out bath;
(5) with 2.38% tetramethylammonium hydroxide aqueous solution, P, N electrode are developed: first in first developing trough, develop 20 seconds, photoresist is fully reacted with developer solution, then take out and put into the development of second developing trough and within 20 seconds, allow reactant from wafer surface drops completely, take out bath;
(6) from developing trough, propose to use rinse bath washed with de-ionized water clean, make its water resistance value reach 5M Ω cm;
(7) finally dry up with hot nitrogen dryer.
2. a kind of new LED photoetching development method according to claim 1, is characterized in that, described hot nitrogen dryer blow-time is: great Tai, little large flow blow 300 seconds, and electric maximum discharge is blown 600 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210447726.0A CN103792799A (en) | 2012-10-29 | 2012-10-29 | New LED photoetching development process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210447726.0A CN103792799A (en) | 2012-10-29 | 2012-10-29 | New LED photoetching development process |
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| Publication Number | Publication Date |
|---|---|
| CN103792799A true CN103792799A (en) | 2014-05-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210447726.0A Pending CN103792799A (en) | 2012-10-29 | 2012-10-29 | New LED photoetching development process |
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| Country | Link |
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| CN (1) | CN103792799A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752282A (en) * | 2015-02-27 | 2015-07-01 | 武汉理工大学 | Sample processing device and process used for manufacturing micro-nano device |
| CN110618586A (en) * | 2019-10-08 | 2019-12-27 | 江苏晟驰微电子有限公司 | Novel photoetching development process |
-
2012
- 2012-10-29 CN CN201210447726.0A patent/CN103792799A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752282A (en) * | 2015-02-27 | 2015-07-01 | 武汉理工大学 | Sample processing device and process used for manufacturing micro-nano device |
| CN104752282B (en) * | 2015-02-27 | 2018-08-07 | 武汉理工大学 | A kind of sample processing device and treatment process for micro-nano device making |
| CN110618586A (en) * | 2019-10-08 | 2019-12-27 | 江苏晟驰微电子有限公司 | Novel photoetching development process |
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Application publication date: 20140514 |