CN103789734B - A kind of neutral cluster line nozzle cluster realizes the method for wide cut nano particle line - Google Patents
A kind of neutral cluster line nozzle cluster realizes the method for wide cut nano particle line Download PDFInfo
- Publication number
- CN103789734B CN103789734B CN201410038796.XA CN201410038796A CN103789734B CN 103789734 B CN103789734 B CN 103789734B CN 201410038796 A CN201410038796 A CN 201410038796A CN 103789734 B CN103789734 B CN 103789734B
- Authority
- CN
- China
- Prior art keywords
- line
- cluster
- nozzle
- nano particle
- rifle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The present invention proposes a kind of method that neutral cluster line nozzle cluster realizes wide cut nano particle line, described line nozzle cluster is realized by line cluster plate and integrated line rifle, line cluster plate is divided into two-layer, the first layer is the nozzle of multiple integrated line rifle, the second layer is separator, separator and nozzle one_to_one corresponding, point-blank, two-layer spacing is between 0.5cm to 5cm to the axis of separator and nozzle.The present invention forms the nano particle line that can be used for larger area and larger flux nanometer processing, realizes the nano-spray of larger area.The wide cut nanometer line of the high particle fluxes realized whereby will contribute to raising and utilize Cluster Beam to carry out Nanosurface to add unit time in man-hour yield, contribute to reducing energy consumption and raising the efficiency, thus effectively reduce the unit cost of nanometer processing.
Description
Technical field
The invention belongs to field of nanofabrication, specifically, relate to a kind of technique utilizing particle beam stream to carry out large-scale nano processing, the nanometer processing expecting size and shape can be realized, for nano-deposit even nano-textile field.
Background technology
Nano structural material becomes the study hotspot in current advanced material field because of undersized finely regulating, brand-new physics and chemistry character, is also one of focus paid close attention in material engineering in recent years.Nanometer manufacture refers to and realizes the controlled processing of nano-scale structure and the controlled synthesis of associated materials and device by methods such as mechanics, physics, chemistry, biology, Materials science, and process under being concerned about nanoscale and nano-precision, be shaped, modification and manufacturing etc. across yardstick.So nanometer manufacturing process is the key of current Development of Nano-technology.
The present invention will introduce a kind of method producing the neutral nano particle line of big area, and this method mainly rises in the Cluster Beam source of eighties of last century the seventies and eighties development in atom and molecule research.So-called elementide, comprises several stable aggregate to a lot of atoms exactly
1-2, Cluster Beam source is exactly the device producing elementide and form flight Cluster Beam.Early stage elementide study limitation is at several or tens atoms
3-5, this once result in C at the end of the eighties
60discovery, famous Nobel chemistry Prize winner Smalley carries out the work on Cluster Beam source.In traditional Cluster Beam source, first utilize solid or fluent material produce atomic vapour and this steam is entered high vacuum end by minimum spray orifice, utilize multistage spray orifice centering to produce the elementide line of collimation.Its principal character is the multistage centering of vapor phase growth, differential extraction and neutral line.Initial Cluster Beam is mainly used in the research of atomic and molecular physics, for generation of Na
13, Au
20deng the elementide containing dozens of atom
3-5.Along this thinking, the main improvement of Cluster Beam method for generation is the method (heating, laser ablation) producing steam
6-9, designs of nozzles (size and pressure reduction), atomicity rank beam component select (pulse choice, magnetic deflection)
10-11, line ionization and high energy acceleration
8,12-15and relevant quantum regulation and control means (imprison, laser manipulate)
16.2008 report newest fruits confirmed M/ Δ M up to 20 beam component select.
Elementide beam source also can be used for producing nano particle line.The size of nano particle is generally at 2-50nm, comprise atomicity at thousands of even millions of, so nano particle i.e. larger sized elementide, carry out structure of modification to traditional elementide beam source and parameter adjustment just can be used for producing the nano particle comprising more polyatom number, Cluster Beam source also just becomes nano particle beam source (also i.e. nanocluster beam source).Along with nanosecond science and technology concern and develop in depth and breadth, near nineteen ninety-five, under the promotion of the pioneers such as German Haberland seminar, a kind of preparation method of nanostructure is also just developed in Cluster Beam source.There are Cluster Beam source in the C.Binns seminar, R.Palmer seminar, gondola P.Milani seminar etc. of H.Haberland seminar of Germany, Britain for the linked development of nano particle line.Wherein, in the exploration of applied research, seminar of Germany mainly pays close attention to super smooth specular optical film preparation, the application that Binns problem pays close attention to the preparation of high-density magnetic storage material, Palmer seminar pays close attention to oil catalysis and biochip aspect, the application outlet of Italian seminar is then selected in ultracapacitor etc.The seminar of Nanjing University of China is also explored in the preparation of nanometer gradient material, sensor, and applies for national inventing patent some (200610037968.7; 200710021318.8; 200710023415.0; 200810098905.1; 201010514268.9; 201010286912.1).Nowadays, Cluster Beam source starts to seek in many-sided application such as nano-powder preparation, the surface-assembled of multiple nanostructure, high-quality minute surface film, surface etching and cleaning, overlay coating and modification, magnetic nanoscale films and the injections of high energy Cluster Beam.
Typical nanocluster line generating chamber comprises three parts as shown in Figure 1, a material source (sputtering target (1) in figure), the aperture (in figure (2) spray orifice) of a mm in size, and a separator (Fig. 1 (3)).Wherein the diameter of aperture is generally between 0.1 to 2mm, and aperture has certain tapered subtended angle, is approximately about 30 degree.The left end (being also air-flow upstream) of aperture has certain high atmospheric pressure, contributed by the atomic vapour (can be produced by sputtering) of rare gas element (being injected by tracheae) and material, the right-hand member (being also airflow downstream) of aperture is good vacuum, generally ensured, so the aperture of this differential extraction is the key of nanocluster quality of beam by the molecular pump (diffusion pump) of large pumping speed.In addition on the one hand, as shown in Figure 2, when nanocluster line from spray orifice out time line comprise various ingredients: the nanocluster particle that existing quality is larger, also the little cluster of very light weight and monatomic is had, to keep flying along axis through the particle that the drift in stretch footpath is heavier, the edge that lighter particle will be dispersed at line, now introduces separator (Fig. 1 (3) or Fig. 2 (4)) and just can choose required nano particle formation nano particle line for nanometer processing.Can find out: this spray orifice must be very little of to ensure the stable of differential extraction, and flying distance must be relatively short, to ensure that nano particle as much as possible passes through.Consider that line subtended angle is after this very little, the nano particle line area that single spray orifice produces can not be very large.At present, in order to process the sample of larger area, people just must introduce scanning device in line rear end, make the sample needing nanometer processing do position scanning, realize the nano-spray of larger area.Recent two decades comes, and the design of the single line rifle of people's Continual Improvement and aerodynamics, try hard to realize larger line, realizes higher nanometer processing efficiency.Under existing conditions, the effort improving the nano particle flow of single Cluster Beam rifle has further been produced effects gradually micro-.So the design proposes the cluster researching and developing multiple Cluster Beam rifle, turn to line rifle by small-sized for single Cluster Beam source, be engaged in the design in geometric distribution, same cluster source is combined by large-area for overlapping for line formation nano particle line.Cluster Beam rifle diameter common is at present at about 10 centimeters, and nanometer bundle flow diameter is generally 1 centimeter after separator.
Reference:
1 Wang Guang is thick. Cluster Physics. and physics, 13 (1995).
2Baletto,F.&Ferrando,R.Structuralpropertiesofnanoclusters:Energetic,thermodynamic,andkineticeffects.Rev.Mod.Phys.77,371-423(2005).
3Li,J.,Li,X.,Zhai,H.J.&Wang,L.S.Au-20:Atetrahedralcluster.Science299,864-867(2003).
4Smalley,R.E.C
60Ups.AbstractsofPapersoftheAmericanChemicalSociety198,21-Phys(1989).
5Liu,Y.etal.NegativeCarbonClusterIon-Beams-NewEvidencefortheSpecialNatureofC
60.ChemicalPhysicsLetters126,215-217(1986).
6Ishii,K.,Amano,K.&Hamakake,H.Hollowcathodesputteringclustersourceforlowenergydeposition:DepositionofFesmallclusters.JournalofVacuumScience&Technologya-VacuumSurfacesandFilms17,310-313(1999).
7Nakao,Y.Methodforthepreparationofpolymer-metalclustercompositeUnitedStatespatent6284387(2001).
8Saito,T.I.-s.,JP),Shoji,T.H.-s.,JP)&Fukumiya,Y.Y.-s.,JP)Gasclusterionbeamemittingapparatusandmethodforionizationofgascluster.UnitedStatespatentUnitedStatesPatent7365341(2008).
9Goldby,I.M.,vonIssendorff,B.,Kuipers,L.&Palmer,R.E.Gascondensationsourceforproductionanddepositionofsize-selectedmetalclusters.ReviewofScientificInstruments68,3327-3334(1997).
10Baker,S.A.etal.ReviewofScientificInstruments71,3178(2000).
11Pratontep,S.,Carroll,S.J.,Xirouchaki,C.,Streun,M.&Palmer,R.E.Size-selectedclusterbeamsourcebasedonradiofrequencymagnetronplasmasputteringandgascondensation.ReviewofScientificInstruments76,045103(2005).
12Iwata,Y.etal.Twentykilovoltsmassiveionbeamsystemforwell-definedmicroclusterstudies.NuclearInstruments&MethodsinPhysicsResearchSectiona-AcceleratorsSpectrometersDetectorsandAssociatedEquipment427,235-241(1999).
13Iwata,Y.,Saito,N.&Tanimoto,M.Mev/UClusterGeneration.NuclearInstruments&MethodsinPhysicsResearchSectionB-BeamInteractionswithMaterialsandAtoms88,10-15(1994).
14Yamada,I.etal.PreparationofAtomicallyFlatGold-FilmsbyIonizedClusterBeam.NuclearInstruments&MethodsinPhysicsResearchSectionB-BeamInteractionswithMaterialsandAtoms55,876-879(1991).
15 Zhang Weidong & Qiu founding fathers. obtain MeV high energy cluster ions bundle with swindletron. nuclear technique 23,94 (2000).
16Haberland,H.,Karrais,M.,Mall,M.&Thurner,Y.Thin-FilmsfromEnergeticClusterImpact-aFeasibilityStudy.J.Vac.Sci.Technol.A10,3266-3271(1992).
Summary of the invention
The object of the invention is to propose a kind ofly build the design of nanocluster line cluster and utilize it to realize the method for wide cut nano particle line, utilize the form of Cluster Beam nozzle (i.e. nanometer spray orifice) forming array or line cluster to form multiple nanocluster particle beam source, form the nano particle line that can be used for larger area and larger flux nanometer processing.The wide cut nanometer line of the high particle fluxes realized whereby will contribute to raising and utilize Cluster Beam to carry out Nanosurface to add unit time in man-hour yield, contribute to reducing energy consumption and raising the efficiency, thus effectively reduce the unit cost of nanometer processing.
Technical solution of the present invention: a kind of neutral cluster line nozzle cluster realizes the method for wide cut nano particle line, this line nozzle cluster is realized by line cluster plate (i.e. integrated line rifle), line cluster plate is divided into two-layer, the first layer is the nozzle of multiple integrated line rifle, the second layer is separator, separator and nozzle one_to_one corresponding, point-blank, two-layer spacing is between 0.5 to 5cm to the axis of separator and nozzle.
Further, Cluster Beam rifle adopts the even dense distribution as Fig. 3 Triangular array, and uses the kind that in current commercial Cluster Beam rifle, diameter is minimum, and be directly generally 2-3cm, the nanometer bundle flow diameter of generation is 1cm.The line of line rifle realizes the distribution of continuous line along the scanning direction arranging the line hole line of centres perpendicular to outermost one, and namely the line of line rifle is along the direction of positive triangle perpendicular bisector.
Further, this cluster line rifle can be utilized to form continuous print wide cut nano particle line, and its main points are integrated abundant line rifle, and with the substrate to be processed of given scanning direction.Particularly point out, the Cluster Beam rifle quantity that now line cluster plate is integrated is determined by the ratio of single line rifle diameter and nanometer bundle flow diameter, is its square.Such as single line rifle diameter is 3cm, and nanometer bundle flow diameter is 1cm, then this line plate at least needs integrated 3 × 3 line rifles, and along line sweep substrate grey in Fig. 3, forms the deposition effect (as Fig. 4) of continuous wide breadth line like this on substrate.
The invention has the beneficial effects as follows, form the nanocluster particle beam source of array with Cluster Beam nozzle (i.e. nanometer spray orifice) forming array (i.e. the form of line cluster), can be used for the nano particle line processing of larger area and larger flux.Realize high-throughout wide cut nanometer line, integrated multiple nano particle line rifle is used for nanometer processing, adding the actual utilization of Cluster Beam in man-hour, improving the efficiency of Cluster Beam source in nanometer processing by contributing to improving Nanosurface.And adopt abundant cluster, form wide cut, the processing of Spatial continual line, Continuous maching required in industry can be realized.
Accompanying drawing explanation
Fig. 1 is that a typical Cluster Beam produces and nozzle schematic diagram;
The exemplary beam distribution plan of Fig. 2 prior art;
Fig. 3 is line cluster plate schematic diagram;
Fig. 4 is the line cluster plate device schematic diagram that can carry out the work of continuous wide breadth line.
Embodiment
Shown in Fig. 1-4, sputtering target 1, spray orifice 2, sorting hole (separator) 3, beam center 4, line outer 5, spray orifice 6, line axis 7.
Scaled down, the Cluster Beam rifle that employing diameter is less, utilize a branch of adfluxion group plate to be integrated by multiple line rifle.As Fig. 3, this line cluster plate is divided into two-layer, and the first layer is multiple (line rifle) nozzle, the second layer is separator, separator and nozzle one_to_one corresponding (forming a line rifle), point-blank, two interlamellar spacings are between 0.5cm to 5cm to the axis of separator and nozzle.
Further, this cluster line rifle can be utilized to form continuous print wide cut nano particle line, and its main points are integrated abundant line rifle, and with the substrate to be processed of given scanning direction.Particularly point out, the Cluster Beam rifle quantity that now line cluster plate is integrated is determined by the ratio of single line rifle diameter and nanometer bundle flow diameter, is its square.Such as single line rifle diameter is 3cm, and nanometer bundle flow diameter is 1cm, and ratio is 3, then this line plate needs integrated at least 3 × 3 line rifles, and along line sweep substrate grey in figure, forms the deposition effect (as Fig. 4) of continuous wide breadth line like this on substrate.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (3)
1. a neutral cluster line nozzle cluster realizes the method for wide cut nano particle line, it is characterized in that described line nozzle cluster is realized by line cluster plate and integrated line rifle, line cluster plate is divided into two-layer, the first layer is the nozzle of multiple integrated line rifle, the second layer is separator, separator and nozzle one_to_one corresponding, point-blank, two-layer spacing is between 0.5cm to 5cm to the axis of separator and nozzle.
2. neutral cluster line nozzle cluster according to claim 1 realizes the method for wide cut nano particle line, it is characterized in that Cluster Beam rifle adopts the even dense distribution of Triangular array.
3. neutral cluster line nozzle cluster according to claim 1 realizes the method for wide cut nano particle line, it is characterized in that line rifle diameter is 2-3cm, and the nanometer bundle flow diameter of generation is 1cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410038796.XA CN103789734B (en) | 2014-01-27 | 2014-01-27 | A kind of neutral cluster line nozzle cluster realizes the method for wide cut nano particle line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410038796.XA CN103789734B (en) | 2014-01-27 | 2014-01-27 | A kind of neutral cluster line nozzle cluster realizes the method for wide cut nano particle line |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103789734A CN103789734A (en) | 2014-05-14 |
| CN103789734B true CN103789734B (en) | 2015-11-18 |
Family
ID=50665783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410038796.XA Expired - Fee Related CN103789734B (en) | 2014-01-27 | 2014-01-27 | A kind of neutral cluster line nozzle cluster realizes the method for wide cut nano particle line |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103789734B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110702743B (en) * | 2019-10-16 | 2021-09-28 | 南京大学 | Nano electromechanical hydrogen sensor and preparation method thereof |
| CN111705303B (en) * | 2020-06-23 | 2021-08-27 | 南京大学 | Application and device of differential aerodynamic design in gas cluster beam source |
| CN111721599B (en) * | 2020-06-23 | 2021-08-27 | 南京大学 | Atomic-level material beam variable-temperature liquid coating collection method and device in vacuum |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102001621A (en) * | 2010-09-16 | 2011-04-06 | 南京大学 | Preparation method of silver nanoparticle lattice with wide plasmon resonant frequency regulation range |
| CN103343317A (en) * | 2013-07-11 | 2013-10-09 | 南京大学 | Preparation method of TiO2 nanoparticle antireflective film based on nanocluster beam deposition system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6419659A (en) * | 1987-07-13 | 1989-01-23 | Minolta Camera Kk | Cluster ion beam source |
| EP1272261A4 (en) * | 2000-03-20 | 2007-02-21 | Epion Corp | Cluster size measurement instrument and method for cluster ion beam diagnostic |
| JP4735183B2 (en) * | 2005-10-20 | 2011-07-27 | 日立造船株式会社 | Cluster generator |
| GB201113168D0 (en) * | 2011-08-01 | 2011-09-14 | Univ Birmingham | Method for producing particulate clusters |
-
2014
- 2014-01-27 CN CN201410038796.XA patent/CN103789734B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102001621A (en) * | 2010-09-16 | 2011-04-06 | 南京大学 | Preparation method of silver nanoparticle lattice with wide plasmon resonant frequency regulation range |
| CN103343317A (en) * | 2013-07-11 | 2013-10-09 | 南京大学 | Preparation method of TiO2 nanoparticle antireflective film based on nanocluster beam deposition system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103789734A (en) | 2014-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103789734B (en) | A kind of neutral cluster line nozzle cluster realizes the method for wide cut nano particle line | |
| US9640369B2 (en) | Coaxial hollow cathode plasma assisted directed vapor deposition and related method thereof | |
| Schoeffler et al. | Magnetic-field generation and amplification in an expanding plasma | |
| Brenning et al. | Alfven's critical ionization velocity observed in high power impulse magnetron sputtering discharges | |
| Anders | High-Power Impulse Magnetron Sputtering (HiPIMS) | |
| Deng et al. | Stage growth of columnar 7YSZ coating prepared by plasma spray-physical vapor deposition | |
| Deng et al. | Regional characteristic of 7YSZ coatings prepared by plasma spray-physical vapor deposition technique | |
| Baranov et al. | Control of ion density distribution by magnetic traps for plasma electrons | |
| Szerypo et al. | Target fabrication for laser-ion acceleration research at the Technological Laboratory of the LMU Munich | |
| CN103668061A (en) | Coating equipment for diamond-like carbon film with high adhesive force, high hardness and low friction-coefficient | |
| Sanzone et al. | Impact of the gas dynamics on the cluster flux in a magnetron cluster-source: Influence of the chamber shape and gas-inlet position | |
| Ishii et al. | Hollow cathode sputtering cluster source for low energy deposition: Deposition of Fe small clusters | |
| CN102925863B (en) | Gas phase method for generating metastable phase nanometer particle beam and depositing nanometer film | |
| CN203700496U (en) | Device for coating diamond-like carbon films | |
| CN109862684A (en) | Single size high current cluster pulsed beams production method | |
| Skopinski et al. | Velocity distributions of particles sputtered from supported two-dimensional MoS 2 during highly charged ion irradiation | |
| US20140044886A1 (en) | Method For The Synthesis Of A Nanostructured Composite Material And A Device For Implementing Said Method | |
| Rodgers et al. | Thermal barrier coating deposition by rarefied gas jet assisted processes: Simulations of deposition on a stationary airfoil | |
| Wang et al. | A nucleation and growth model of silicon nanoparticles produced by pulsed laser deposition via Monte Carlo simulation | |
| Schnürer et al. | Charge steering of laser plasma accelerated fast ions in a liquid spray—creation of MeV negative ion and neutral atom beams | |
| Ramos et al. | High‐Flux DC Magnetron Sputtering | |
| Skovorodko et al. | Gas dynamic considerations for performance of nanocluster deposition system | |
| Takaoka et al. | Surface processing using water cluster ion beams | |
| Kravchenko et al. | The interaction of a supersonic plasma jet containing nanoparticles with a substrate | |
| Stagon | Physical vapor deposition of nanorods from science to technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151118 Termination date: 20180127 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |