CN1037798A - Tantalum powder mixed aluminide for capacitor stage - Google Patents
Tantalum powder mixed aluminide for capacitor stage Download PDFInfo
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- CN1037798A CN1037798A CN88102739A CN88102739A CN1037798A CN 1037798 A CN1037798 A CN 1037798A CN 88102739 A CN88102739 A CN 88102739A CN 88102739 A CN88102739 A CN 88102739A CN 1037798 A CN1037798 A CN 1037798A
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Abstract
A kind of doping process method of producing the capacitor level ta powder, be characterized in adding simultaneously dopant water-soluble aluminum salt and water-soluble phosphate, the water-soluble aluminum salt that is added is 3000ppm following (in a metallic element aluminium), and the amount that adds water-soluble phosphate is 5-100ppm (in an element phosphor).Because the mixing and doping of water-soluble aluminum salt and water-soluble phosphate can improve specific volume and puncture voltage simultaneously.
Description
The present invention relates to the production technology of Ta powder used in capacitor, be used for making the process of the doping that tantalum powder that electrolytic capacitor anode uses produces more precisely.
The anodic oxide of tantalum surface is one deck densification, amorphous tantalum pentoxide film, and its stable chemical performance, corrosion-resistant, dielectric constant is big.So the tantalum powder is an ideal material of making electrolytic capacitor, and tantalum electrolytic capacitor is the ideal element in the modern electronic product.
One of approach that improves tantalum powder specific volume is to mix in a certain operation of powder process.Usually claim preceding doping with the doping before the sodium reduction of potassium floutaramite, then claim the back to mix thereafter.
American documentation literature US4,009,007 has introduced the process of producing the back doping of Ta powder used in capacitor, in middle pressure tantalum powder, add phosphate, its doping is that 5-400ppm(is in element phosphor), the advantage of this technology is that its specific volume is increased to some extent, and shortcoming is that leakage current increases, and puncture voltage generally descends.
British patent document GB2126253A has introduced the back doping process method of another kind of production Ta powder used in capacitor.This technology is blended metal oxide in the tantalum powder, the amount of its doping up to 5000ppm(in amount of metal), the metal oxide of adding is silicon dioxide, alundum (Al, titanium dioxide.Its advantage is that breakdown potential is pressed with bigger raising, but specific volume and leakage current are constant substantially, and because what mixed is the metal oxide powder, the proportion of metal oxide powder and ta powder differs bigger, be difficult for mixing, and make alloy skewness in the tantalum powder, and influence product quality, and bring difficulty for industrial production in the future.
Purpose of the present invention just is to improve the process of the back doping of above-mentioned production Ta powder used in capacitor, work out under the constant substantially condition of leakage current, make the dopant that puncture voltage and specific volume increase simultaneously, and make dopant and ta powder be easy to mix, be convenient to industrial large-scale production.
The present invention is a kind of process of producing the doping of capacitor level ta powder, ta powder raw material and dopant water-soluble inorganic salt are added water fully to be mixed well, make it be pulpous state, oven dry, the cohesion degassing under the condition of high vacuum high temperature, broken, levigate, said water-soluble inorganic salt is an aluminium salt, and its doping is 3000ppm following (in a metallic element aluminium).
In order to make Ta powder used in capacitor under the constant substantially situation of leakage current, when puncture voltage increases, its specific volume is also increased, when adding aluminium salt, it is good adding the dopant water-soluble phosphate again, and the specific volume of the Ta powder used in capacitor of producing and puncture voltage are all increased to some extent.
The water-soluble aluminum salt that is added is wherein a kind of in the aluminium salt such as meta-aluminate, aluminum sulfate, aluminum nitrate, is good with sodium metaaluminate, and the amount that is added is 3000ppm following (in a metallic element aluminium, down with), again with 50-1000ppm for better.If the amount of its adding increases the oxygen content in the product greater than 1000ppm, and the crisp phenomenon of silk easily takes place, and less than 50ppm, the added value of puncture voltage is less; The water-soluble phosphate that is added is wherein a kind of of diammonium hydrogen phosphate, ammonium dihydrogen phosphate, sodium hydrogen phosphate, sodium dihydrogen phosphate, dipotassium hydrogen phosphate, potassium dihydrogen phosphate, sodium phosphate, potassium phosphate, but with ammonium dihydrogen phosphate is good, because the adding ammonium dihydrogen phosphate, the ammonia volatilization is removed when aggegation outgases.
The amount that adds ammonium dihydrogen phosphate simultaneously with sodium metaaluminate in 50-100ppm(with element phosphor) for well.
Tantalum powder and dopant water-soluble aluminum salt and water-soluble phosphate mix, and add water and fully mix well, and make it be pulpous state, and used water is distilled water, and deionized water is to avoid bringing into harmful impurity.
The temperature of the mixed slurry oven dry of tantalum powder raw material and dopant is controlled between 50 °-80 ℃ is advisable, less than 50 ℃ of drying times use oversize, have oxidative phenomena to take place greater than 80 ℃ of tantalum powder, the time of oven dry generally was controlled at more than 5 hours.
The vacuum degree that the cohesion degassing is controlled in the tantalum degasification furnace should be less than 5 * 10
-5Holder generally is controlled at 5 * 10
-5-1 * 10
-7Between the holder, if vacuum degree is lower, greater than 5 * 10
-5Holder makes product be easy to take place oxidation, increases the oxygen content of product; The temperature that the cohesion degassing is controlled with between 1300 °-1500 ℃ for well, surpass 1500 ℃ the product specific volume reduced, outgas in cohesion below 1300 ℃, make the mobile variation of product.
After the cohesion degassing, carry out fragmentation, levigate, the granularity that makes product forms doping tantalum powder all by 60 mesh sieves.
Employed tantalum powder raw material is that potassium floutaramite is produced through sodium reduction, produces in this way to read anxious and fearful Ji play and hold location Feng and drag Zheng location, abundant approve street gather ∮ 0 order, and when 1900 ℃ of sintering, specific volume is about 4000 μ Fv/g.Fine powder is less than 320 orders, and when 1500 ℃ of sintering, specific volume is about 18000 μ Fv/g.
Advantage of the present invention is to have improved the process of the back doping of producing Ta powder used in capacitor, adds two kinds of dopants simultaneously, makes puncture voltage and the specific volume to increase simultaneously and leakage current remains unchanged substantially.Thereby, or the operating voltage of raising electrolytic capacitor; Or reduce sintering temperature and anodic oxidation voltage is constant, thereby improved capacitance.This all will reduce the powder amount of using, and reduce the cost of tantalum capacitor.Because used dopant is water-soluble aluminium salt and phosphate, easy and tantalum powder raw material mixes, and is convenient to industrial large-scale production.
More specifically describe the present invention with following non-limiting examples, protection scope of the present invention is not subjected to the qualification of these embodiment.
Embodiment 1
Used raw material is the fine powder (Guangxi chestnut tin mineral) of potassium floutaramite through sodium reduction.Accurately take by weighing tantalum powder and dopant sodium metaaluminate (NaAlO
2Commercially available analysis is pure) a certain amount of, mix, fully mix well with deionized water, be pulpous state.Paste mixture is placed baking oven, dried 6 hours for 75 ℃, in tantalum piece degasification furnace (being a vacuum degassing furnace, is heater with the tantalum piece, Shanghai Vaccum Pump Factory's outlet), control vacuum degree 5 * 10 then
-6Holder, 1400 ℃ of degassings one hour with its fragmentation, levigate to by 60 sieve meshes, and are made doping tantalum powder after coming out of the stove.
Take by weighing doping tantalum powder 0.5 gram, with the mould of diameter 4.5mm, pressed density is 4.5g/cm
3, place stove sheet sintering furnace then, generally control vacuum degree less than 5 * 10
-5Holder is controlled at 3 * 10 in the present embodiment
-5Holder.Fine powder is generally 1500-1600 ℃ of sintering 30 minutes, in the present embodiment in 1560 ℃ of sintering 30 minutes.
Tantalum piece electrical property condition determination is, with sintering tantalum piece in 90 ° 0.01%.In the phosphoric acid solution of (percetage by weight), anodic oxidation under the constant current of 35mA/g, be oxidized to 70v after, constant voltage 2 hours makes the electric current free damping, and makes the tantalum anode piece.With CE-I type electrolytic capacitor leakage current tester, in the 0.01%(percetage by weight) phosphoric acid solution in, stablize 3 minutes readings after the charging of tantalum anode piece, record tantalum anode piece leakage current value, use the MO-230A volumeter, in the 38%(percetage by weight) sulfuric acid solution in measure the capacitance of tantalum anode piece.Measure puncture voltage with puncture voltage tester (Beijing Non-Ferrous Metal Research General Academy's product), in airtight container, in 90 ℃ 0.01%(percetage by weight) phosphoric acid solution in, anodic oxidation under the constant current of 35mA/g is till oxide-film is breakdown.Measuring the results are shown in Table one.
From the visible doping phosphoric acid ammonium dihydrogen of table one specific volume is risen, but puncture voltage descends, during the doping sodium metaaluminate, specific volume is constant substantially, and makes the puncture voltage 15v that risen.
Embodiment 2～7
Process that doping tantalum powder is produced and relevant method of testing are substantially with embodiment 1, and only used tantalum powder raw material is a meal, and the temperature of oven dry is controlled at 78 ℃, dries by the fire 5 hours; The vacuum degree of controlling during the degassing is 5 * 10
-6Holder, the temperature of degassing control is 1500 ℃, outgases 1 hour; Pressed density 5.6g/cm
3, 1900 ℃ of sintering 30 minutes, the tantalum agglomerate is oxidized to 200v, constant voltage 2 hours.Its measuring the results are shown in Table two.
During from the visible doping sodium metaaluminate of table two, specific volume and k value are constant substantially, and puncture voltage then increases with the increase of doping.
Embodiment 8～9
The manufacturing technique method of doping tantalum powder and relevant method of testing thereof are substantially with embodiment 1, and only used tantalum powder raw material is a meal, and bake out temperature is controlled at 80 ℃, dry by the fire control vacuum degree 8 * 10 during the degassing 5 hours
-7Holder, the temperature of degassing control is 1490 ℃, outgases pressed density 5.6g/cm 1 hour
3, 1900 ℃ of sintering 30 minutes, the tantalum agglomerate was oxidized to the 200v constant voltage 2 hours, and its measuring the results are shown in Table three.
From table three sodium metaaluminate and monoammonium phosphate mixing and doping as can be known, can improve specific volume and puncture voltage simultaneously.
Embodiment 10
The manufacturing technique method of doping tantalum powder and relevant method of testing thereof are substantially with embodiment 1, and only used tantalum powder raw material is a meal, and bake out temperature is controlled at 80 ℃, dry by the fire control vacuum degree 5 * 10 during the degassing 5 hours
-6Holder outgased pressed density 5.6g/cm 1 hour
3, 1900 ℃ of sintering 30 minutes, the tantalum agglomerate was oxidized to the 200v constant voltage 2 hours, and its measuring the results are shown in Table four.
Embodiment 11～13
The manufacturing technique method of doping tantalum powder and relevant method of testing thereof are substantially with embodiment 1, and only used tantalum powder raw material is a meal, and bake out temperature is controlled at 80 ℃, dry control vacuum degree 5 * 10 during the degassing 5 hours
-6Holder, the temperature of degassing control is 1450 ℃, outgases pressed density 5.6g/cm 1 hour
3, 1900 ℃ of sintering 30 minutes, the tantalum agglomerate was oxidized to the 200v constant voltage 2 hours, and its measuring the results are shown in Table five.
Claims (4)
1, a kind of process of producing the doping of capacitor level ta powder, ta powder and dopant water-soluble inorganic salt are added water fully to be mixed well, be pulpous state, oven dry, the cohesion degassing under high vacuum high temperature, broken, levigate, feature of the present invention is, said water-soluble inorganic salt is an aluminium salt, and its doping is 3000ppm following (in a metallic element aluminium).
2, according to a kind of doping process method of claim 1, it is characterized in that, add water-soluble phosphate when adding aluminium salt.
According to a kind of doping process method of claim 2, it is characterized in that 3, water-soluble aluminum salt is a sodium metaaluminate, water-soluble phosphate is a monoammonium phosphate.
According to a kind of doping process method of claim 3, it is characterized in that 4, the amount that adds sodium metaaluminate is that 50-1000ppm(is in metallic element aluminium), the amount that adds ammonium dihydrogen phosphate is that 5-100ppm(is in element phosphor).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN88102739A CN1014847B (en) | 1988-05-20 | 1988-05-20 | Tantalum powder mixed aluminide for capacitor stage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN88102739A CN1014847B (en) | 1988-05-20 | 1988-05-20 | Tantalum powder mixed aluminide for capacitor stage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1037798A true CN1037798A (en) | 1989-12-06 |
| CN1014847B CN1014847B (en) | 1991-11-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN88102739A Expired CN1014847B (en) | 1988-05-20 | 1988-05-20 | Tantalum powder mixed aluminide for capacitor stage |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1311091C (en) * | 2005-05-24 | 2007-04-18 | 长沙南方钽铌有限责任公司 | Method of making tantalum material from tantalum powder-yttrium nitrate liquid-slid adulterant |
-
1988
- 1988-05-20 CN CN88102739A patent/CN1014847B/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1311091C (en) * | 2005-05-24 | 2007-04-18 | 长沙南方钽铌有限责任公司 | Method of making tantalum material from tantalum powder-yttrium nitrate liquid-slid adulterant |
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| Publication number | Publication date |
|---|---|
| CN1014847B (en) | 1991-11-20 |
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