CN103779435A - Efficiency enhancing technology for cadmium telluride (CdTe) and copper indium gallium selenium (CIGS) thin-film solar cell - Google Patents
Efficiency enhancing technology for cadmium telluride (CdTe) and copper indium gallium selenium (CIGS) thin-film solar cell Download PDFInfo
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- CN103779435A CN103779435A CN201310180459.XA CN201310180459A CN103779435A CN 103779435 A CN103779435 A CN 103779435A CN 201310180459 A CN201310180459 A CN 201310180459A CN 103779435 A CN103779435 A CN 103779435A
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 19
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 title claims abstract description 9
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 title claims abstract 4
- 239000010409 thin film Substances 0.000 title abstract 3
- 230000002708 enhancing effect Effects 0.000 title 1
- 239000011521 glass Substances 0.000 claims abstract description 54
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 34
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 7
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims 1
- 238000001228 spectrum Methods 0.000 abstract description 28
- 238000010521 absorption reaction Methods 0.000 abstract description 15
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 239000010408 film Substances 0.000 abstract 3
- 238000010586 diagram Methods 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 241001424688 Enceliopsis Species 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- PLZFHNWCKKPCMI-UHFFFAOYSA-N cadmium copper Chemical compound [Cu].[Cd] PLZFHNWCKKPCMI-UHFFFAOYSA-N 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000000695 excitation spectrum Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/541—CuInSe2 material PV cells
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Abstract
Structres of a cadmium telluride (CdTe) cell and a copper indium gallium selenium (CIGS) cell are similar in front several layers. From the incident light direction of sunlight, three layers on the CdTe and CIGS thin-film solar cell comprise a photoelectric glass lining roof (1), a transparent conductive film TCO (2) and a cadmium sulfide (CdS) window layer (3). The CdTe and CIGS thin-film solar cell is characterized in that the glass lining roof is doped with a rare earth element, and the periphery is plated by a reflective film. According to the utility model, the rare earth doped glass lining roof is adopted to replace a general ultra clear glass lining roof, the rare earth doped glass lining roof has a function of converting a spectrum in a solar spectrum within a wave band of 300nm-450nm into visible light, thereby overcoming ineffective absorption of the part of short waves by the transparent conductive film TCO (2) and the CdS window layer (3), enabling a cadmium telluride (CdTe) cell absorption layer or a copper indium gallium selenium (CIGS) cell absorption layer to effectively absorb the part of spectrum, improving the short wave response, and achieving purposes of increasing light current and improving the photoelectric conversion efficiency of the cell.
Description
Technical field
Cadmium telluride and copper-indium-galliun-selenium film solar cell are subject to increasing attention with the stability of its higher photoelectric conversion efficiency (> 10%) and efficiency thereof, good low light level performance, and wherein cadmium telluride battery has dropped into large-scale volume production and application.
Background technology
Cadmium telluride has similar structure (Fig. 1, Fig. 2) with copper indium gallium selenide cell, solar spectrum is by the direction incident of glass lined top, through glass, transparent conductive oxide film (TCO), Window layer cadmium sulfide (CdS), then arrive respectively absorbed layer CdTe and CIGS, CdTe and CIGS are the main bodys that effectively absorbs photon and produce electron hole pair in battery separately.
Traditional ultra-clear glasses lining top can reach more than 90% the transmissivity of visible ray and infrared light (450nm～1100nm) band spectrum, but for the spectrum that is shorter than 450nm wave band, it is very fast that transmissivity decays.Glass lined top increases after plating transparent conductive oxide film TCO, transmissivity to visible ray and infrared light (450nm～1100nm) band spectrum generally can remain on more than 80%, to being shorter than the spectrum of 450nm wave band, transmissivity decay is faster, also depends on the ABSORPTION EDGE of TCO material.
TCO generally adopts SnO
2: F (FTO) and ZnO:Al (AZO), FTO is generally used for the preposition transparency electrode of cadmium telluride battery, its energy gap is 3.6eV～4.0eV, on glass lined top, increase after plating FTO, FTO glass further reduces the transmission of the following wave band of 450nm, particularly be shorter than the following part of 345nm wave band for spectrum, and be reduced to 80%～90% in the transmissivity of visible light wave range; AZO is generally used for the preposition transparency electrode of copper indium gallium selenide cell, and its energy gap is 3.4eV, and AZO glass has strong absorption to the ultraviolet below 375nm, is reduced to more than 80% in the transmissivity of 400nm～700nm wave-length coverage section;
The general character of two kinds of batteries is all to use N-shaped CdS material as resilient coating (Window layer), and the effect of CdS is is mostly internal electric fields, rather than as light-absorption layer.Due to the toxicity of cadmium (Cd), many research institutions attempt development and do not replace CdS containing Cd resilient coating, but effect is always not as CdS ideal.The energy gap of CdS material is 2.41eV, and corresponding spectral absorption cut-off wavelength is 515nm.There is obvious green glow to absorb, be obviously unfavorable for that the photogenerated current of shortwave spectral coverage is collected.It is generally acknowledged that the light induced electron-hole producing is not to being collected in CdS.In order to reduce the invalid absorption of CdS to solar spectrum, the method extensively adopting is at present to reduce the thickness of CdS layer, and the thickness in cadmium telluride or copper indium gallium selenide cell reduces to respectively 50 nanometers.With CdS absorption coefficient=7 × 10
-4cm
-1, calculate intensity in transmission I=I
oe
-α x, to being shorter than the spectra part of 515nm wave band, transmitted light intensity only has 70.47% original (corresponding 50 nanometer thickness).Although CdS layer attenuate can reduce the invalid absorption of spectrum greatly, CdS layer is too thin, can cause PN junction disappearance, and photovoltaic effect is had a negative impact, simultaneously undoubtedly can be harsher to the requirement of equipment and process process.
The spectrum of the 300nm～515nm wave band in solar spectrum, can arrive effective absorbed layer CdTe of hull cell or CIGS and the part that effectively absorbed, should be that this part spectrum penetrates remainder after glass lined top, TCO and CdS Window layer.
Summary of the invention
The object of the invention is in order to overcome TCO and CdS layer to being shorter than the defect of the invalid absorption of 450nm wave band solar spectrum in solar spectrum.
The present invention solves the technical scheme that its technical problem takes:
Adopt rear-earth-doped glass lined top, this glass lined top has lower translation function, being characterized in can be by the excitation of spectra of 300nm～450nm wave band in solar spectrum, then launches the broadband spectral that a peak value is 523nm (Fig. 5 (a) and (b)).Because peak value and the wavelength band of these emission spectrum are nearly all positioned at outside the ABSORPTION EDGE of TCO and CdS, thereby the transmissivity after TCO and CdS stack is all increased, avoid within the scope of this most ultraviolet spectra by the invalid absorption of TCO and CdS layer, improve the photoelectric respone of this part spectrum, increase by the absorbable photon numbers of battery obsorbing layer, thereby can increase photocell and improve photoelectric conversion efficiency.In hull cell, the thickness of CdS can no longer be confined to 50 nanometer thickness, can correspondingly suitably thicken.Edge, glass lined top scribbles reflector, the edge light leak pushing up from glass lined with the spectrum preventing after lower conversion.
The invention has the beneficial effects as follows:
The energy gap of CdTe material is 1.45eV, can absorb the solar spectrum of 300nm～855nm wave band.The energy gap of CIGS can regulate by the proportioning that changes element.
The spectrum of 300nm-450nm wave band in solar spectrum, realize lower conversion through rear-earth-doped glass lined top, convert the broadband spectral that peak value is 523nm (Fig. 5) to, can penetrate easily TCO and CdS, effectively avoided the major part of this part ultraviolet light by the invalid absorption of TCO and CdS.In addition, consider excitation spectrum (light 6 in Fig. 6) the non-total reflection solid angle loss 12% of lower conversion, all the other total reflection parts are because surrounding is coated with reflector, and light leak is effectively controlled.Under AM1.0 and AM1.5 solar radiation condition, on original basis, efficient intensity/photoelectric current is increased respectively to 8.1% and 5.8%.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and example, the present invention is further described.
Fig. 1 is the basic structure schematic diagram of cadmium telluride in prior art (CdTe) solar cell;
Fig. 2 is the basic structure schematic diagram of Copper Indium Gallium Selenide in prior art (CIGS) solar cell;
Fig. 3 is the basic structure schematic diagram of cadmium telluride of the present invention (CdTe) solar cell, and lining top is rear-earth-doped glass, edge plating transmitting film;
Fig. 4 is the basic structure schematic diagram of Copper Indium Gallium Selenide of the present invention (CIGS) solar cell, and lining top is rear-earth-doped glass, edge plating reflectance coating;
Fig. 5 (a) is the excitation spectrum that the present invention serves as a contrast topping material, is (b) emission spectrum that the present invention serves as a contrast topping material;
Fig. 6 be respectively incident ray without scattering or excite arrive at absorbed layer, incident ray in glass through scattering or the schematic diagram that excites;
Embodiment
Fig. 6 is that the present invention has rare earth doped glass lined top cadmium telluride battery and four layers of basic structure schematic diagram above copper indium gallium selenide cell.Sun light beam enters above three layers and is divided into two kinds of situations: (A) and (B)
(A) sun light beam enters and in vitreum, is not scattered or the sight of fluorescence excitation particle not:
Light 1 is incident sunray;
Light 1 ' is the reflection ray of light 1 in air and glass interface;
Light 2 ' is the reflection ray of light 2 at glass and TCO interface;
Light 3 is that light 2 is passing the refracted ray that enters TCO behind glass and TCO interface;
Light 3 ' is the reflection ray of light 3 at TCO and CdS interface;
Light 4 is that light 3 is passing the refracted ray that enters CdS layer behind TCO and CdS interface;
(B) sun light beam enter in vitreum, be scattered or fluorescence excitation particle after launch the sight of new photon:
Light 5 is incident sunrays;
Light 6 is that light 5 is passing the refracted ray that enters glass after air and glass interface;
Light 6 runs into fluorescent grain (the 7th, the position at fluorescent grain place, is not light) in position 7.If photon wavelength > is 450nm, this photon is to space all directions scattering, and wavelength is constant; If photon wavelength < 450nm, this photon can be launched new photon by fluorescence excitation particle, Einstein shift, its wavelength in visible-range, peak value 523nm (as Fig. 5 (a) (b)), realized time conversion;
Light 8 and light 10 are respectively that light 6 is scattered or two kinds of situations of the backward space of fluorescence excitation particle all directions transmittings: light 8 is angle of departure sights while being less than critical angle θ, can not produce total internal reflection at vitreum and air interface, a part can see through the interface of glass and air, be refracted in air, become light 9.Light 8 ' be that light 8 is returned the part in glass by glass and air interface reflections; Light 10 is angle of departure sights while being more than or equal to critical angle θ, and light produces total internal reflection at glass and air interface.Because edge, glass lined top scribbles reflector, this part photon can not see through edge and spill, but arrives absorbed layer CdTe or CIGS at inside battery through multiple reflections and refraction.
Light 8 ' and light 10 in 450nm～515nm band spectrum, be positioned at outside the ABSORPTION EDGE of TCO, see through TCO, a part by the invalid absorption of CdS, arrive absorbed layer; Light 8 ' and light 10 in after red shift is moving wave band (Fig. 5 (the b)) overwhelming majority can penetrate TCO and CdS simultaneously and arrive at absorbed layer.
The loss of the angle of departure of utilizing emitted light in glass
There is the critical angle θ=sin of full transmitting
-1(1/n
glass), work as n
glass=1.5333, θ=40.71 °, rare earth luminous material point in glass isotropically to space 360 ° luminous, in the time that the angle of departure is in the circular cone take θ as drift angle, a utilizing emitted light part is refracted in air in glass and air interface, a part is reflected back inside glass, the solid angle that conical surface surrounds
beyond the angle of departure is positioned at the circular cone take θ as drift angle time, in glass and air interface, utilizing emitted light is launched back inside glass entirely, at glass and TCO interface, due to total reflection can not occur, utilizing emitted light transmissive glass, TCO and CdS layer, absorbed layer CdTe or CIGS absorb; Therefore, the loss of rare earth luminous material utilizing emitted light solid angle is
in order to reduce solid angle loss, the refractive index of selected glass is large as much as possible.
The present invention adopts rear-earth-doped glass lined top, overcome the restriction of original battery structure and material physical properties, can make cadmium telluride and copper indium gallium selenide cell effectively utilize the spectrum of 300nm～450nm wave band in solar spectrum, improve the short wave response to solar spectrum, thereby making to arrive absorbed layer CdTe or CIGS efficient intensity increases, thereby reach increase photoelectric current, improve the object of photoelectric conversion efficiency.
The above, it is only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction, any simple modification, equivalent variations and modification that every foundation technical spirit of the present invention is done above embodiment, all still belong in the scope of technical solution of the present invention.
Claims (4)
1. cadmium telluride and copper indium gallium selenium solar cell, above it, three layers comprise glass lined top (1), transparent conductive film TCO (2), cadmium sulfide CdS Window layer (3), it is characterized in that: the glass that this glass lined top is rare earth doped fluorescent material replaces photovoltaic ultra-clear glasses (seeing Fig. 3 and Fig. 1 comparison, Fig. 4 and Fig. 2 comparison).
2. glass lined according to claim 1 top, is characterized in that: the described fluorescent RE powder ratio of adulterating is 0.1%～30%.
3. glass lined according to claim 1 top, is characterized in that: the edge on described glass lined top scribbles reflectance coating.
4. glass lined according to claim 1 top, is characterized in that: Window layer (3) is not limited to cadmium sulfide (CdS) material, can be the Window layer that ZnS, InS etc. do not contain Cd element.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310180459.XA CN103779435A (en) | 2013-05-16 | 2013-05-16 | Efficiency enhancing technology for cadmium telluride (CdTe) and copper indium gallium selenium (CIGS) thin-film solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310180459.XA CN103779435A (en) | 2013-05-16 | 2013-05-16 | Efficiency enhancing technology for cadmium telluride (CdTe) and copper indium gallium selenium (CIGS) thin-film solar cell |
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|---|---|
| CN103779435A true CN103779435A (en) | 2014-05-07 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010104890A2 (en) * | 2009-03-09 | 2010-09-16 | The University Of North Carolina At Charlotte | Efficiency enhancement of solar cells using light management |
| CN101866964A (en) * | 2009-04-17 | 2010-10-20 | 张为 | Thin film solar cell having improved short wave response function |
| CN102254986A (en) * | 2011-05-20 | 2011-11-23 | 南开大学 | Preparation method of novel solar cell fluorescence reinforced film material |
| CN102656701A (en) * | 2009-12-15 | 2012-09-05 | 第一太阳能有限公司 | Photovoltaic window layer |
| DE102011051918A1 (en) * | 2011-07-18 | 2013-01-24 | Schott Solar Ag | Photovoltaic thermal (PVT) collector has solar cell extended along radiation-side transparent element, and downstream heat exchanger that is provided for transferring heat to fluid leading element |
| CN202855752U (en) * | 2012-11-07 | 2013-04-03 | 厦门神科太阳能有限公司 | CIGS based thin film solar cell |
-
2013
- 2013-05-16 CN CN201310180459.XA patent/CN103779435A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010104890A2 (en) * | 2009-03-09 | 2010-09-16 | The University Of North Carolina At Charlotte | Efficiency enhancement of solar cells using light management |
| CN101866964A (en) * | 2009-04-17 | 2010-10-20 | 张为 | Thin film solar cell having improved short wave response function |
| CN102656701A (en) * | 2009-12-15 | 2012-09-05 | 第一太阳能有限公司 | Photovoltaic window layer |
| CN102254986A (en) * | 2011-05-20 | 2011-11-23 | 南开大学 | Preparation method of novel solar cell fluorescence reinforced film material |
| DE102011051918A1 (en) * | 2011-07-18 | 2013-01-24 | Schott Solar Ag | Photovoltaic thermal (PVT) collector has solar cell extended along radiation-side transparent element, and downstream heat exchanger that is provided for transferring heat to fluid leading element |
| CN202855752U (en) * | 2012-11-07 | 2013-04-03 | 厦门神科太阳能有限公司 | CIGS based thin film solar cell |
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Application publication date: 20140507 |