CN103779400A - Composite electrode and preparation method thereof - Google Patents
Composite electrode and preparation method thereof Download PDFInfo
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- CN103779400A CN103779400A CN201310231644.7A CN201310231644A CN103779400A CN 103779400 A CN103779400 A CN 103779400A CN 201310231644 A CN201310231644 A CN 201310231644A CN 103779400 A CN103779400 A CN 103779400A
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- 239000002131 composite material Substances 0.000 title claims abstract description 8
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 29
- 239000012528 membrane Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000002070 nanowire Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- -1 micron cone Substances 0.000 claims description 3
- 239000002110 nanocone Substances 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 239000002077 nanosphere Substances 0.000 claims description 3
- 239000002071 nanotube Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000012986 modification Methods 0.000 abstract description 4
- 230000004048 modification Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/413—Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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Abstract
The invention provides a composite electrode, which comprises an electrode substrate, a micro structure array and a conductive film layer, wherein the micro structure array is arranged on the upper surface of the electrode substrate; and the conductive film is deposited on the surface of the electrode substrate provided with the micro structure array. Correspondingly, the invention further provides a preparation method for the composite electrode. According to the invention, a surface modification layer provided with the micro structure layer is prepared on the surface of the electrode substrate, thereby enabling the electrode surface to have the micro structure array, and being capable of effectively increasing the mutual contact area when the composite electrode and other materials are contacted or friction is generated therebetween.
Description
Technical field
The present invention relates to field of semiconductor devices, particularly relate to a kind of combination electrode and preparation method thereof.
Background technology
In semiconductor device, the surface texture of electrode has material impact to the performance of device, conventionally while relying on electrode material to prepare, the surface of self-assembling formation and the other parts of device contact, because the electrode surface forming is like this flat surface, the coarse electrode surface of can not satisfying the demand is so that the demand of electrode enlarge active surface when contacting or rub with other material.
Summary of the invention
The invention provides the combination electrode that a kind of surface simple in structure is micro structure array, comprising:
Electrode base board;
Be arranged on the micro structure array of described electrode base board upper surface;
Be deposited on the conductive membrane layer on the electrode base board surface that is provided with described micro structure array.
Preferably, described micro structure array is selected from the array of nano wire, nanotube, nano particle, nanometer channel, micron groove, nanocone, micron cone, nanosphere and micron chondritic.
Preferably, the material of described micro structure array is selected from oxide semiconductor material.
Preferably, described micro structure array is ZnO nanowire array.
Preferably, the height of described micro structure array is between 200 nanometers to 2 micron.
Preferably, described conductive membrane layer adopts metallic film, conductive oxide film.
Preferably, described metal is selected from Ag, Au, Cu, Al; Described conductive oxide is selected from indium tin oxide.
Preferably, the thickness of described conductive membrane layer is between 50 nanometer to 400 nanometers.
Preferably, described electrode base board is conductor.
Preferably, described electrode base board is flexible base, board.
Preferably, described electrode base board adopts identical material with described conductive membrane layer.
Accordingly, the present invention also provides a kind of method for preparing composite electrode, comprises step:
Electrode base board is provided;
At described electrode base board upper surface, micro structure array is set;
Be provided with the electrode base board surface deposition conductive membrane layer of described micro structure array.
Combination electrode provided by the invention and preparation method thereof has following beneficial effect:
1, combination electrode provided by the invention, has prepared the finishing coat with micro structure array on the surface of electrode base board, make electrode surface have micro structure array, has effectively increased surface area and the surperficial energy of electrode.When combination electrode of the present invention contacts or rubs with other material, contact area between can effectively increasing mutually, can be applied in the device of contact area need to increase electrode and contact or rub with other material time as in the devices such as electrostatic pulse generator, gas sensor, fuel cell.
2, the combination electrode of nanostructure can increase surface area and the surface energy of electrode effectively, thereby has strengthened significantly the skin effect of combination electrode, and miniaturization, the intellectuality etc. of device are realized and have important using value and scientific meaning fast.
3, adopting the combination electrode of flexible material electrode base board to can be used as flexible electrode is applied on flexible device.
4, method for preparing composite electrode provided by the invention, depositing electrically conductive thin layer again after electrode base board surface arranges micro structure array, each step can need accurately to control according to design, the method is easy, and can with other semiconductor device preparation process compatibility.
Accompanying drawing explanation
Shown in accompanying drawing, above-mentioned and other object of the present invention, Characteristics and advantages will be more clear.In whole accompanying drawings, identical Reference numeral is indicated identical part.Deliberately do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on illustrating purport of the present invention.
Fig. 1 is the structural representation of combination electrode of the present invention;
Fig. 2 is the preparation flow figure of combination electrode of the present invention;
Fig. 3 and Fig. 4 are for preparing combination electrode process schematic diagram.
Embodiment
In semiconductor device, the surface texture of electrode has material impact to the performance of device, conventionally while relying on electrode material to prepare, the surface of self-assembling formation and the other parts of device contact, because the electrode surface forming is like this flat surface, for the device that needs electrode to contact or rub with other material, the demand of enlarge active surface can not meet electrode and contact or rub with other material time.
The invention provides a kind of can surface the combination electrode that is micro structure array, its technical scheme be at substrate surface deposition micro structure array as template, and then depositing electrically conductive thin layer material, obtains surface and has the electrode of micro structure array decorative layer.
Concrete, can adopt chemical method to prepare micro structure array on electrode base board surface, then use physical method depositing electrically conductive thin layer, to reach the object that increases electrode material surface roughness.The inventor thinks, when the nano array structure that the chemistry of this material surface and physical synthesis method of modifying obtain and another kind of material are in contact with one another, these nano-arrays can insert another kind of material to increase friction and contact area.There are some researches show, extra friction can effectively increase and contact charge density with the contact area of increase, and therefore, combination electrode of the present invention can be applied in static nano generator, as a frictional layer of generator, during with other material friction, can obtain higher power output simultaneously.In the device such as gas sensor, fuel cell, adopt combination electrode of the present invention, the contact area of gas or liquid and electrode surface can be increased, thereby higher output can be obtained.
Introduce in detail the embodiment of cantilever type impulse generator of the present invention below in conjunction with accompanying drawing.
Fig. 1 is combined electrode structure schematic diagram of the present invention, and described combination electrode comprises electrode base board 10, is arranged on the micro structure array 20 of electrode base board 10 upper surfaces, and is deposited on the conductive membrane layer 30 on electrode base board 10 surfaces that are provided with micro structure array 20.
In the present invention, electrode base board 10 is the baseplate material of selecting according to actual needs, be not particularly limited here, and can be conductor, semiconductor or insulator.Preferably, electrode base board 10 is conductor.Preferred, conductive membrane layer 30 adopts identical material with electrode base board 10.
The material of electrode base board 10 can be rigid, and the such as rigid substrate such as glass, aluminium sheet can be also flexible, such as PMMA film, Copper Foil etc.Adopt the combination electrode of flexible electrode base board can be applied in flexible device.
In the present invention, micro structure array 20 can be for being selected from the array of nano wire, nanotube, nano particle, nanometer channel, micron groove, nanocone, micron cone, nanosphere and micron chondritic, wherein, the size of each array element is between 20 nanometers to 2 micron.The height of micro structure array 20 is preferably between 200 nanometers to 2 micron.
In the present invention, micro structure array 20 is equivalent to, on electrode base board surface, micro-structural template is set, therefore the material of micro structure array is selected without specific (special) requirements, can be for being prepared into arbitrarily conductor, semiconductor or the insulating material of micron or nanosized microstructure, in the present invention, be preferably oxide semiconductor material, for example ZnO, SnO
2deng semi-conducting material, more specifically, can be ZnO nanowire array.Micro structure array 20 can be to adopt physics or the chemical method micro structure array that directly growth obtains on electrode base board surface, can be also that the surface that adopts micro-nano process technology that previously prepared good micro-structural is directly placed on to electrode base board obtains micro structure array.
The material of conductive membrane layer 30 can be selected metallic film material or conductive oxide material, the films such as the preferred Ag of metal material, Au, Cu, Al, and conductive oxide film is preferably indium tin oxide (ITO) film.In combination electrode of the present invention, conductive membrane layer 30 adopts the conventional method for manufacturing thin film deposition such as sputter, evaporation to form film.The deposit thickness scope of conductive membrane layer 30 is preferably between 50 nanometer to 400 nanometers.
Accordingly, the present invention also provides a kind of preparation method of combination electrode, and Fig. 2 is the flow chart of preparing combination electrode, comprising:
Step S1, provides electrode base board.
In the present invention, electrode base board can be flexible base, board, can be also rigid substrate.It can be electrically-conductive backing plate that described electrode base board needs according to practical devices, can be also semiconductor or insulator substrate.
Step S2, arranges micro structure array at the upper surface of described electrode base board.
In the present invention, the material of described micro structure array can select can be prepared into arbitrarily conductor, semiconductor or the insulating material of micron or nanosized microstructure.
Step S3, is being provided with the electrode base board upper surface depositing electrically conductive thin layer of described micro structure array.
In the present invention, described conductive membrane layer can be metal or conductive oxide film layer, and this conductive membrane layer can adopt the conventional method for manufacturing thin film such as sputter, evaporation to deposit.
Method for preparing composite electrode provided by the invention, depositing electrically conductive thin layer again after electrode base board surface arranges micro structure array, each step can accurately be controlled as required, the method is easy, and can with other semiconductor device preparation process compatibility.Introduce the preparation process of combination electrode of the present invention below with an object lesson.
Select beallon sheet as electrode base board, referring to Fig. 3, on the upper surface of beallon electrode base board 10, adopt hydrothermal synthesis method making ZnO nano-wire array 20, the surface of the basic vertical and electrode base board 10 of ZnO nano-wire, the length of the length nano wire of ZnO nano-wire is about 500 nanometers.
Referring to Fig. 4, adopt magnetically controlled sputter method deposit thickness to be about the Au thin layer 30 of 200 nanometers on electrode base board 10 surfaces that are prepared with ZnO nanowire array 20, obtain and there is micro structure array decorative layer on beallon surface, complete the preparation of combination electrode.
The above, be only preferred embodiment of the present invention, not the present invention done to any pro forma restriction.Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible variations and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (12)
1. a combination electrode, is characterized in that, comprising:
Electrode base board;
Be arranged on the micro structure array of described electrode base board upper surface;
Be deposited on the conductive membrane layer on the electrode base board surface that is provided with described micro structure array.
2. combination electrode according to claim 1, is characterized in that, described micro structure array is selected from the array of nano wire, nanotube, nano particle, nanometer channel, micron groove, nanocone, micron cone, nanosphere and micron chondritic.
3. combination electrode according to claim 1 and 2, is characterized in that, the material of described micro structure array is selected from oxide semiconductor material.
4. combination electrode according to claim 3, is characterized in that, described micro structure array is ZnO nanowire array.
5. according to the combination electrode described in claim 1-4 any one, it is characterized in that, the height of described micro structure array is between 200 nanometers to 2 micron.
6. according to the combination electrode described in claim 1-5 any one, it is characterized in that, described conductive membrane layer adopts metallic film or conductive oxide film.
7. combination electrode according to claim 6, is characterized in that, described metal is selected from Ag, Au, Cu, Al; Described conductive oxide is selected from indium tin oxide.
8. according to the combination electrode described in claim 1-7 any one, it is characterized in that, the thickness of described conductive membrane layer is between 50 nanometer to 400 nanometers.
9. according to the combination electrode described in claim 1-8 any one, it is characterized in that, described electrode base board is conductor.
10. according to the combination electrode described in claim 1-9 any one, it is characterized in that, described electrode base board is flexible base, board.
11. according to the combination electrode described in claim 1-10 any one, it is characterized in that, described electrode base board adopts identical material with described conductive membrane layer.
12. 1 kinds of method for preparing composite electrode, is characterized in that, comprise step:
Electrode base board is provided;
At described electrode base board upper surface, micro structure array is set;
Be provided with the electrode base board surface deposition conductive membrane layer of described micro structure array.
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| CN201310231644.7A CN103779400A (en) | 2013-06-09 | 2013-06-09 | Composite electrode and preparation method thereof |
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| CN201310231644.7A CN103779400A (en) | 2013-06-09 | 2013-06-09 | Composite electrode and preparation method thereof |
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| CN103779400A true CN103779400A (en) | 2014-05-07 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538293A (en) * | 2014-12-30 | 2015-04-22 | 清华大学 | Method for preparing gold nano array structure on target electrode of chip structure |
| CN106876259A (en) * | 2015-12-11 | 2017-06-20 | 昆山工研院新型平板显示技术中心有限公司 | A kind of flexible conductive wire and it is provided with the flexible back plate of the flexible conductive |
| CN106865491A (en) * | 2015-12-14 | 2017-06-20 | 国网智能电网研究院 | A kind of nano-electrode array and preparation method thereof |
| CN106872564A (en) * | 2015-12-14 | 2017-06-20 | 国网智能电网研究院 | A kind of SF6Gas sensor |
| CN108918599A (en) * | 2018-05-08 | 2018-11-30 | 中芯集成电路（宁波）有限公司 | A kind of gas sensor and forming method thereof |
| CN109075189A (en) * | 2015-12-02 | 2018-12-21 | 于利奇研究中心有限公司 | Method for manufacturing the flat contact free face of nanometer semiconductor structure |
| CN114551970A (en) * | 2021-11-17 | 2022-05-27 | 万向一二三股份公司 | Self-charging type all-solid-state battery |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104538293B (en) * | 2014-12-30 | 2017-05-24 | 清华大学 | Method for preparing gold nano array structure on target electrode of chip structure |
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| CN109075189A (en) * | 2015-12-02 | 2018-12-21 | 于利奇研究中心有限公司 | Method for manufacturing the flat contact free face of nanometer semiconductor structure |
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| CN106876259A (en) * | 2015-12-11 | 2017-06-20 | 昆山工研院新型平板显示技术中心有限公司 | A kind of flexible conductive wire and it is provided with the flexible back plate of the flexible conductive |
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| CN106872564A (en) * | 2015-12-14 | 2017-06-20 | 国网智能电网研究院 | A kind of SF6Gas sensor |
| CN108918599A (en) * | 2018-05-08 | 2018-11-30 | 中芯集成电路（宁波）有限公司 | A kind of gas sensor and forming method thereof |
| CN108918599B (en) * | 2018-05-08 | 2022-01-11 | 中芯集成电路（宁波）有限公司 | Gas sensor and forming method thereof |
| CN114551970A (en) * | 2021-11-17 | 2022-05-27 | 万向一二三股份公司 | Self-charging type all-solid-state battery |
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