CN103779162A - Ion implanter accelerator - Google Patents
Ion implanter accelerator Download PDFInfo
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- CN103779162A CN103779162A CN201210444720.8A CN201210444720A CN103779162A CN 103779162 A CN103779162 A CN 103779162A CN 201210444720 A CN201210444720 A CN 201210444720A CN 103779162 A CN103779162 A CN 103779162A
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- rings
- accelerator
- pressure flange
- accelerating
- low pressure
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Abstract
The invention discloses an ion implanter accelerator which comprises: ten accelerating electrodes, a suppressor electrode, eleven retainer rings, ten insulation rings, a low pressure flange, a high pressure flange, eight draw bars, eleven grading rings and a junction pole, wherein the ten accelerating electrodes, the low pressure flange and the insulation rings are connected together by the draw bars; the low pressure flange end is provided with the suppressor electrode; the adjacent accelerating electrodes are isolated by the insulation rings and sealed by sealing rings in vacuum; and the grading rings are circular ring metal tubes and fixed on the outer edge of the accelerating electrodes by the retainer rings. The high energy ion implanter accelerator has the largest characteristic of strong acceleration capacity; the high energy ion implanter accelerator adopts the constant gradient working mode to cause the electric field to be more uniform; and the accelerating electrodes adopt the labyrinth combination structure so as to effectively avoid the pollution resulting from the charged particles which hit to the insulating inner wall of the accelerator in the accelerating process.
Description
Technical field
Type of the present invention relates to a kind of ion implantor accelerator, and particularly the constant gradient accelerator in energetic ion implanter, belongs to field of manufacturing semiconductor devices.
Background technology
Along with the develop rapidly of ic manufacturing technology, semiconductor manufacturing equipment has been proposed to more and more higher requirement, for meeting the needs of new technology, as the ion implantor of one of key equipment of semiconductor ion doping processing line in line index, beam energy purity, inject the aspects such as severity control, implantation homogeneity and productivity ratio and need to constantly improve raising.
Under the electric field action of ion in accelerator, accelerate and obtain higher energy.Traditional Implantation machine equipment mostly adopts two unit, single gap formula accelerator, and this type of accelerator structure is simple, and focusing power is strong, but also has obvious defect: because electric field is more concentrated, very easily occur spark phenomenon, cause device damage; As improving one's methods, some novel accelerator of development adopts linear design recently, is made up of a series of electrodes of being isolated by medium, and the negative voltage on electrode increases successively, sort accelerator Electric Field Distribution evenly, be difficult for puncturing, but structure is more complicated.Can not effectively avoid the generation of spark phenomenon.
Type of the present invention is for above-mentioned technical background, the uniform accelerator of the Electric Field Distribution of a kind of anti-sparking proposing according to the specific (special) requirements of energetic ion implanter.
Summary of the invention
Type of the present invention is achieved through the following technical solutions:
A kind of ion implantor accelerator comprises: ten accelerating electrodes, low pressure flanges, suppress electrode, 11 collars, ten dead rings, a high pressure flange, eight pull bars, 11 grading rings, a junction pole.It is characterized in that: accelerating electrode adopts maze-type structure design; Ten accelerating electrodes, low pressure flange, dead rings connect by pull bar; Between adjacent accelerating electrode, be provided with dead ring, and adopt sealing ring vacuum seal; Suppress electrode, be arranged at low pressure flange end; Grading ring is circular ring metal pipe, is fixed on the outer rim of each accelerating electrode with collar.
Type of the present invention has following remarkable advantage:
1. have ten accelerating electrodes, make accelerator acceleration capacity stronger, the energy that ion obtains is higher; And adopt constant gradient working method, make Electric Field Distribution more even;
2. accelerating electrode adopts labyrinth type combining structure, effectively prevents that charged particle from getting on the insulation inwall of accelerator in accelerator and the pollution causing.
Accompanying drawing explanation
Fig. 1 is the front view of the accelerator of type of the present invention.
Fig. 2 is the schematic diagram of the acceleration electricity level combination of type of the present invention.
Embodiment
Below in conjunction with accompanying drawing, type of the present invention is described further.
Referring to Fig. 1 and Fig. 2, a kind of ion implantor accelerator comprises: ten accelerating electrodes 1, suppress electrode 2, ten 3,11 collars of dead ring 4, a high pressure flange 5, eight 6,11 grading rings of pull bar 7, a junction pole 8, a low pressure flange 9, it is characterized in that: accelerating electrode 1, low pressure flange 9, dead ring 3 connect by pull bar 6, eight pull bars are parallel to each other; Between adjacent electrode, be provided with dead ring 3, and adopt sealing ring vacuum seal; Low pressure flange 9 is electronegative potential, is provided with one above and suppresses electrode 2, in order to avoid electron back to accelerate; Junction pole 8 is the crunch seal lead-in wires that suppress electrode 2, suppresses voltage and is added in and is suppressed on electrode by it.Grading ring 7 is circular ring metal pipe, can adopt stainless steel or other metals to make, and be fixed on the outer rim of ten accelerating electrodes with collar 9, smooth with what guarantee to connect.
The first electrode is in electronegative potential from left to right, and the tenth electrode is in high potential, with together with eight electrodes of centre, distributes under the effect of all pressing at grading resistor, forms constant gradient Electric Field Distribution.In ion optics, also can be used as two circular hole diaphragm lens, the lens combination that in the middle of adding, uniform electric field district forms is processed.Electric field between energetic ion implanter accelerator electrode is uniform electric field, and ion beam accelerates in this electric field, and obtains acceleration energy.
The maze-type structure design of accelerating electrode is got on the electrode or metallic plate parallel with bunch the charged particle of outside scattering in accelerator, rather than directly get to the inwall of accelerator, avoid to a certain extent the wall polluting of accelerator, thereby reduced accelerator, the probability of striking sparks has occurred.
The specific implementations of type of the present invention elaborates the content of type of the present invention.For persons skilled in the art, any apparent change of under the prerequisite that does not deviate from type spirit of the present invention, it being done, all forms the infringement to type patent of the present invention, will bear corresponding legal liabilities.
Claims (1)
1. an energetic ion implanter accelerator structure, comprise: ten accelerating electrodes, a low pressure flange, suppress electrode, 11 collars, ten dead rings, a high pressure flange, eight pull bars, 11 grading rings, a junction pole, it is characterized in that: accelerating electrode adopts maze-type structure design; Ten accelerating electrodes, low pressure flange, dead rings connect by pull bar; Low pressure flange end is provided with one and suppresses electrode; Between adjacent accelerating electrode, be provided with dead ring, and adopt sealing ring vacuum seal; Grading ring is circular ring metal pipe, is fixed on the outer rim of ten accelerating electrodes with collar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210444720.8A CN103779162A (en) | 2012-11-09 | 2012-11-09 | Ion implanter accelerator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210444720.8A CN103779162A (en) | 2012-11-09 | 2012-11-09 | Ion implanter accelerator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103779162A true CN103779162A (en) | 2014-05-07 |
Family
ID=50571295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210444720.8A Pending CN103779162A (en) | 2012-11-09 | 2012-11-09 | Ion implanter accelerator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103779162A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280468A (en) * | 2014-06-23 | 2016-01-27 | 斯伊恩股份有限公司 | Ion implantation apparatus |
| CN105551922A (en) * | 2015-12-11 | 2016-05-04 | 中国电子科技集团公司第四十八研究所 | SiC high-temperature high-energy aluminum ion implantation machine |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999062098A1 (en) * | 1998-05-22 | 1999-12-02 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for low energy ion implantation |
| JP2001210266A (en) * | 1999-12-13 | 2001-08-03 | Axcelis Technologies Inc | Operating method and constitutional parts for ion implantation device |
| JP2009283277A (en) * | 2008-05-22 | 2009-12-03 | Renesas Technology Corp | Method for manufacturing semiconductor device |
| CN101728203A (en) * | 2008-10-22 | 2010-06-09 | 北京中科信电子装备有限公司 | High energy ion implanter accelerator designing mode |
-
2012
- 2012-11-09 CN CN201210444720.8A patent/CN103779162A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999062098A1 (en) * | 1998-05-22 | 1999-12-02 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for low energy ion implantation |
| JP2001210266A (en) * | 1999-12-13 | 2001-08-03 | Axcelis Technologies Inc | Operating method and constitutional parts for ion implantation device |
| JP2009283277A (en) * | 2008-05-22 | 2009-12-03 | Renesas Technology Corp | Method for manufacturing semiconductor device |
| CN101728203A (en) * | 2008-10-22 | 2010-06-09 | 北京中科信电子装备有限公司 | High energy ion implanter accelerator designing mode |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280468A (en) * | 2014-06-23 | 2016-01-27 | 斯伊恩股份有限公司 | Ion implantation apparatus |
| CN105280468B (en) * | 2014-06-23 | 2018-04-20 | 斯伊恩股份有限公司 | Ion implantation apparatus |
| TWI674613B (en) * | 2014-06-23 | 2019-10-11 | 日商住友重機械離子技術有限公司 | Ion implantation device |
| CN105551922A (en) * | 2015-12-11 | 2016-05-04 | 中国电子科技集团公司第四十八研究所 | SiC high-temperature high-energy aluminum ion implantation machine |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140507 |