CN103771724A - All-solid-state film electrochromic glass and preparation method thereof - Google Patents
All-solid-state film electrochromic glass and preparation method thereof Download PDFInfo
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- CN103771724A CN103771724A CN201210400683.0A CN201210400683A CN103771724A CN 103771724 A CN103771724 A CN 103771724A CN 201210400683 A CN201210400683 A CN 201210400683A CN 103771724 A CN103771724 A CN 103771724A
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Abstract
The present invention relates to an all-solid-state film electrochromic glass, which comprises a substrate, an ion blocking layer, a first transparent conductive layer, an inorganic discolored layer, an inorganic ion conductor layer, an inorganic ion storage layer, a second transparent conductive layer and a protective layer, wherein the ion blocking layer, the first transparent conductive layer, the inorganic discolored layer, the inorganic ion conductor layer, the inorganic ion storage layer, the second transparent conductive layer and the protective layer are sequentially formed on the substrate through a vapor deposition method. The present invention further provides a preparation method for the all-solid-state film electrochromic glass. The all-solid-state film electrochromic glass has advantages of electrochromic energy-saving glass stability increase and manufacturing process simplifying.
Description
Technical field
The present invention relates to a kind of energy-saving glass and preparation method thereof, especially a kind of full solid thin film electrochomeric glass and preparation method thereof.
Background technology
Electrochromism (Electrochromic, EC) refers under DC Electric Field, the phenomenon that the optical property generation continuous reversible of material changes, and there is reversible change process in the color and the transparency that show as intuitively material.Electrochomeric glass optionally absorbs or reflects External Heat Flux and stops internal heat diffusion, and reducing office block and residential construction thing is to keep nice and cool and keep in the winter time mass energy warm and that must expend in summer.The electrochromism Energy Saving Windows of making by electrochomeric glass can realize the subband auto-control of photo-thermal on nearly all and comfortable energy-conservation relevant wave band.Because electrochomeric glass has the optical property feature such as adjustable, low-work voltage, less energy-consumption, radiationless, wide visual angle, open circuit memory continuously, except the application of building field, it also has broad application prospects at aspects such as information display part, message memory, anti-dazzle reflecting mirror, color-changing solar mirrors.
Normally two transparent conductive films are as electrode for electrochomeric glass, and it is ion barrier material, discoloration material layer, ionophore layer, ion storage layer and protective layer etc. that centre is contained.
But, existing electrochomeric glass, its ionophore layer and ion storage are many to be made up of liquid electrolyte and organic polymer ionogen, and it has certain corrosive nature to adjacent film layers, and ion is easy to spread, therefore its work-ing life and retention of color are undesirable.Moreover, preparation technology's control complexity of existing electrochomeric glass, manufacturing cost is high, has also limited the development of electrochomeric glass to big area, industrial applications.
Summary of the invention
In view of above-mentioned condition, be necessary to provide a kind of full solid thin film electrochomeric glass and preparation method thereof, it can improve stability and the simplified manufacturing technique of electrochromism energy-saving glass.
A kind of full solid thin film electrochomeric glass, it comprises substrate and is formed at successively this on-chip ion barrier layer, the first transparency conducting layer, inorganic photochromic layer, mineral ion conductor layer, mineral ion storage layer, the second transparency conducting layer and protective layer by vapour deposition process.
A preparation method for full solid thin film electrochomeric glass, it comprises the following steps: substrate is positioned over to vacuum sputtering district; And on this substrate, form successively ion barrier layer, the first transparency conducting layer, inorganic photochromic layer, mineral ion conductor layer, mineral ion storage layer, the second transparency conducting layer and protective layer by vapour deposition process.
Above-mentioned full solid thin film electrochomeric glass adopts unique film layer structure, and all retes are to be all made up of solid material, does not therefore deposit the problem of film layer corrosion in the prior art, thereby can increase the stability that full solid thin film electrochomeric glass uses; And full solid thin film electrochomeric glass is to form successively each layer by vapour deposition process on substrate, can complete coating process in same equipment when preparation, therefore can, so that the simplification of production technique reduces production costs, enhance productivity.
Accompanying drawing explanation
Fig. 1 is the full solid thin film electrochomeric glass schematic diagram of the embodiment of the present invention.
Fig. 2 is the prepared full solid thin film electrochomeric glass of the specific embodiment of the invention 1 transmitance variation diagram in visible-range.
Fig. 3 is the prepared full solid thin film electrochomeric glass of the specific embodiment of the invention 2 transmitance variation diagram in visible-range.
Embodiment
Below in conjunction with drawings and Examples, full solid thin film electrochomeric glass of the present invention and preparation method thereof is described in further detail.
Refer to Fig. 1; the full solid thin film electrochomeric glass 100 of the embodiment of the present invention comprises substrate 11, and the ion barrier layer 12, the first transparency conducting layer 13, inorganic photochromic layer 14, mineral ion conductor layer 15, the mineral ion that are formed at successively on substrate 11 by vapour deposition process store layer 16, the second transparency conducting layer 17 and protective layer 18.
Specifically in the present embodiment, substrate 11 can be simple glass, and preferably thickness is the ultra-clear glasses of 3～10 millimeters, is more preferably thickness and is the ultra-clear glasses of 6 millimeters.
The thickness of ion barrier layer 12 can be 15～30 nanometers, preferably 17～23 nanometers, and it can be formed by the nitride of the oxide compound of silicon, titanyl compound or silicon, for example, be by silicon-dioxide (SiO
2), titanium dioxide (TiO
2) or silicon nitride (Si
3n
4) form.
The thickness of the first transparency conducting layer 13 can be 100～600 nanometers, preferably 200～300 nanometers, it can be formed by metal, metal oxide or its mixture, for example, be to be formed by tin indium oxide (ITO), Al-Doped ZnO (AZO), fluorine doped tin oxide (FTO) or lithium silver alloys (AgLi).
The thickness of inorganic photochromic layer 14 can be 50～300 nanometers, preferably 150～250 nanometers, and it can be by Tungsten oxide 99.999 (WO
3), molybdenum oxide (MoO
3), niobium oxides (Nb
2o
3), titanium oxide (TiO
2), nickel oxide (NiO
x), iridium oxide (Ir
2o
3), vanadium oxide (V
2o
5), rhodium oxide (Rh
2o
3) or cobalt oxide (CoO
x) form, preferably formed by Tungsten oxide 99.999, molybdenum oxide or niobium oxides, be more preferably by Tungsten oxide 99.999 and form.
The thickness of mineral ion conductor layer 15 can be 200～1200 nanometers, preferably 500～1000 nanometers, and more preferably 800 nanometers, it can be by Trilithium phosphate (LiPO
4), nitrogenize Trilithium phosphate (LiPON), lithium silicate (Li
4siO
4), lithium aluminate (γ-LiAlO
2), lithium aluminosilicate (LiAlSiO
4), lithium chromate (LiCrO
3), sulfuric acid boron lithium (LiBO
2+ Li
2sO
4), lithium vanadate (LiV
2o
5), lithium tantalate (LiTaO
3), the nitride (Li of lithium
3n), the oxide compound (Cr of chromium
2o
3) or the oxide compound (Ta of tantalum
2o
3) form, preferably formed by nitrogenize Trilithium phosphate, lithium silicate or lithium tantalate, be more preferably by nitrogenize Trilithium phosphate and form.
The thickness that mineral ion stores layer 16 can be 0～700 nanometer, preferably 200～550 nanometers, and it can be by lithium (Li), cobalt acid lithium (LiCoO
2), iron lithium phosphate (LiFePO
4), lithium titanate (LiTiO
2), lithium nickelate (LiNiO
2), lithium manganate (LiMnO
4), lithium chromate (Li
2crO
4), Quilonum Retard (Li
2cO
3), lithium vanadate (LiV
2o
5), vanadic acid nickel lithium (LiNiVO
4), the oxide compound (NiO) of nickel, the oxide compound (V of vanadium
2o
5), the oxide compound (MoO of molybdenum
3) or titanyl compound (TiO
2) form, preferably the oxide compound of lithium, cobalt acid lithium, iron lithium phosphate or nickel forms, and is more preferably by cobalt acid lithium and forms.
The thickness of the second transparency conducting layer 17 can be 100～600 nanometers, preferably 100～300 nanometers, it can be formed by metal, metal oxide or its mixture, for example, be to be formed by tin indium oxide (ITO), Al-Doped ZnO (AZO), fluorine doped tin oxide (FTO), lithium silver alloys (AgLi) or low radiation (Low-e) composite bed.
The thickness of protective layer 18 can be 30～50 nanometers, preferably 34～43 nanometers, and it can be formed by the oxide compound of the nitride of silicon, silicon or titanyl compound.It should be noted that; when the second transparency conducting layer 17 is low radiative recombination layer; protective layer 18 can be used as the part in low radiative recombination layer; in other words; the second transparency conducting layer 17 forms low radiative recombination layer together with protective layer 18, and at this moment the second transparency conducting layer 17 can be 100～190 nanometers with the total thickness of protective layer 18.
In addition, the embodiment of the present invention also provides a kind of preparation method of full solid thin film electrochomeric glass.
Please, again referring to Fig. 1, substrate 11 is positioned over vacuum sputtering district by the preparation method of the full solid thin film electrochomeric glass of the embodiment of the present invention; But on substrate 11, form successively ion barrier layer 12, the first transparency conducting layer 13, inorganic photochromic layer 14, mineral ion conductor layer 15, mineral ion storage layer 16, the second transparency conducting layer 17 and protective layer 18 by vapour deposition process.
Wherein, vapour deposition process can be magnetron sputtering; The base vacuum degree in vacuum sputtering district can be less than 5.0 × 10-6 millibar (mbar).
More specifically, on substrate 11, forming successively by vapour deposition process the process that ion barrier layer 12, the first transparency conducting layer 13, inorganic photochromic layer 14, mineral ion conductor layer 15, mineral ion store layer 16, the second transparency conducting layer 17 and protective layer 18 is: with rotating cathode DC magnetron reactive sputtering formation of deposits blocking layer 12; Add pulsed magnetron sputtering formation of deposits the first transparency conducting layer 13 with planar cathode or rotating cathode, direct current or direct current; With planar cathode or dual rotary negative electrode, direct current adds pulsed magnetron sputtering or radio frequency reaction magnetron sputtering deposition forms inorganic photochromic layer 14; Form ionophore layer 15 with planar cathode or dual rotary negative electrode, radio frequency reaction magnetron sputtering deposition; Form ion storage layer 16 with planar cathode or dual rotary negative electrode, radio frequency reaction magnetron sputtering deposition; Add pulsed magnetron sputtering formation of deposits transparency conducting layer 17 with planar cathode or rotating cathode, direct current or direct current; And with rotating cathode direct current reaction magnetron sputtering form protective layer 18.
Above-mentioned full solid thin film electrochomeric glass 100 adopts unique film layer structure, all retes are to be all made up of solid material, therefore do not deposit the problem of film layer corrosion in the prior art, thereby can increase the stability that full solid thin film electrochomeric glass 10 uses; And full solid thin film electrochomeric glass 100 is to form each layer successively on substrate 11 by vapour deposition process, can complete coating process in same equipment when preparation, therefore can, so that the simplification of production technique reduces production costs, enhance productivity.
Specific embodiment
Embodiment 1
The film layer structure of full solid thin film electrochomeric glass is in the ultra-clear glasses of 6 millimeters, to form successively silicon-dioxide (SiO
2) layer, tin indium oxide (ITO) layer, Tungsten oxide 99.999 (WO
3) layer, nitrogenize Trilithium phosphate (LiPON) layer, cobalt acid lithium (LiCoO
2) layer, tin indium oxide (ITO) layer, silicon nitride (Si
3n
4) layer.
Its manufacturing processed is as described below.
6mm ultra-clear glasses enters vacuum film coating chamber after pure water cleaning, drying.
MF reactive magnetron sputtering silicon oxide target, prepares silicon dioxide layer: setting power 30KW, sputtering voltage 450V, pure argon sputter, air pressure 3 × 10
-4mbar, thicknesses of layers 30nm.
Direct current adds pulse power magnetron sputtering rotation tin indium oxide target and prepares indium tin oxide layer: pulsed operation voltage 800V, volts DS 180V, pulse-repetition 40KHz, setting power 60KW, pure argon sputter, air pressure 5 × 10
-4mbar, walking speed 1.5m/min, tin indium oxide thicknesses of layers 300nm.
Radio frequency reaction magnetron sputtering pottery oxidation tungsten target is prepared tungsten oxide layer: 6 pairs of ceramic Tungsten oxide 99.999 ceramic target, frequency 13.56MHz, radio frequency power P=400W, self-bias 600V, argon gas and the sputter of oxygen mix atmosphere, Ar:O2=10:1, air pressure 8 × 10
-4mbar, walking speed 1.5m/min, the loose octahedra Tungsten oxide 99.999 of formation thickness 200nm.
Radio frequency reaction magnetron sputtering pottery Trilithium phosphate target is prepared nitrogenize Trilithium phosphate layer: radio-frequency sputtering 8 is to ceramic Trilithium phosphate target, rf frequency 13.56MHz, radio frequency power 350～450W, argon gas and the sputter of oxygen mix atmosphere, Ar:N
2=10:0.5～1, sputtering pressure 1 × 10
-4mbar, walking speed 1.5m/min, making thickness is the nitrogenize Trilithium phosphate layer of 800nm.
Radio frequency reaction magnetron sputtering pottery cobalt acid lithium target is prepared cobalt acid lithium layer: radio-frequency sputtering 6 is to ceramic cobalt acid lithium target, frequency 13.56MHz, radio frequency power P=450W, self-bias 500～600V, argon gas and the sputter of oxygen mix atmosphere, Ar:O
2=10:0.3～0.5, air pressure 9 × 10
-4mbar, walking speed 1.5m/min, the cobalt acid lithium rete of formation 350nm.
Direct current adds pulse power magnetron sputtering rotation tin indium oxide target and prepares indium tin oxide layer: pulsed operation voltage 800V, volts DS 180V, pulse-repetition 40KHz, setting power 60KW, pure argon sputter, air pressure 5 × 10
-4mbar, walking speed 1.5m/min, tin indium oxide thicknesses of layers 300nm.
MF reactive magnetron sputtering silicon target, prepares silicon nitride layer.Setting power 60KW, sputtering voltage 650V, the sputter of argon gas nitrogen mixture atmosphere, Ar:N
2=10:1, air pressure 3 × 10
-4mbar, thicknesses of layers 50nm.
Refer to Fig. 2, be depicted as the prepared full solid thin film electrochomeric glass of the present embodiment 1 transmitance variation diagram in visible-range.As can be seen from Figure 2, in the state of fading, the visible light transmissivity of the prepared full solid thin film electrochomeric glass of embodiment 1 is 75%～85%, and at coloured state, and the visible light transmissivity of the prepared full solid thin film electrochomeric glass of embodiment 1 is 10%～18%; As can be seen here, the prepared full solid thin film electrochomeric glass of embodiment 1, in visible-range, has good light controllability, has reached required adjustable, the energy-saving effect of intelligent glass.
Embodiment 2
The film layer structure of full solid thin film electrochomeric glass is in the ultra-clear glasses of 6 millimeters, to form successively silicon nitride (Si
3n
4) layer, lithium silver alloys (AgLi) layer, nichrome (NiCr) layer, Tungsten oxide 99.999 (WO
3) layer, nitrogenize Trilithium phosphate (LiPON) layer, cobalt acid lithium (LiCoO
2) layer and low radiation (Low-e) composite bed.
Its manufacturing processed is as described below.
6mm ultra-clear glasses enters vacuum film coating chamber after pure water cleaning, drying.
Silicon nitride dielectric layer adopts intermediate frequency power supply to add rotating cathode sputtering sedimentation in argon nitrogen atmosphere: vacuum magnetic-control sputtering equipment is 80～90KW, and intermediate frequency power supply frequency is 40KHz, thickness 30nm.
Magnetron sputtering metallic lithium silver alloys target, preparation AgLi conductive layer, thickness 15nm.
Radio frequency reaction magnetron sputtering pottery oxidation tungsten target is prepared tungsten oxide layer, 6 pairs of Tungsten oxide 99.999 ceramic target, frequency 13.56MHz, radio frequency power P=400W, self-bias 600V, argon gas and the sputter of oxygen mix atmosphere, Ar:O
2=10:1, air pressure 8 × 10
-4mbar, walking speed 1.5m/min, the loose octahedra Tungsten oxide 99.999 of formation thickness 370nm.
Radio frequency reaction magnetron sputtering pottery Trilithium phosphate target is prepared nitrogenize Trilithium phosphate layer, and radio-frequency sputtering 8 is to ceramic Trilithium phosphate target, rf frequency 13.56MHz, radio frequency power 350～450W, argon gas and the sputter of oxygen mix atmosphere, Ar:N
2=10:0.5～1, sputtering pressure 1 × 10
-4mbar, walking speed 1.5m/min, making thickness is the Trilithium phosphate layer of 800nm.
Radio frequency reaction magnetron sputtering pottery cobalt acid lithium target is prepared cobalt acid lithium layer, and radio-frequency sputtering 6 is to ceramic cobalt acid lithium target, frequency 13.56MHz, radio frequency power P=450W, self-bias 500～600V, argon gas and the sputter of oxygen mix atmosphere, Ar:O
2=10:0.3～0.5, air pressure: 9 × 10
-4mbar, walking speed 1.5m/min, the cobalt acid lithium rete of formation 250nm.
Low radiation (Low-e) composite bed comprises nichrome layer (NiCr) layer, silicon nitride (Si successively
3n
4) layer, zinc (ZnSnO
x) layer, chromic acid nickel (NiCrO
x) layer, Kufil (AgCu) layer, chromic acid nickel (NiCrO
x) layer, zinc (ZnSnO
x) layer and silicon nitride (Si
3n
4) layer.Wherein, nichrome layer (NiCr) layer adopts DC pulse sputtering sedimentation in argon atmospher: vacuum magnetic-control sputtering equipment is 3KW, thickness 2nm; Silicon nitride layer adopts intermediate frequency power supply to add rotating cathode sputtering sedimentation in argon nitrogen atmosphere: vacuum magnetic-control sputtering equipment is 80～90KW, and intermediate frequency power supply frequency is 40KHz, thickness 30nm; Zinc stannate layer adopts intermediate frequency power supply to add rotating cathode sputtering sedimentation in argon oxygen atmosphere: vacuum magnetic-control sputtering equipment is 50～60KW, and intermediate frequency power supply frequency is 40KHz, thickness 10nm; Chromic acid nickel dam adopts DC pulse sputtering sedimentation in argon atmospher: vacuum magnetic-control sputtering equipment is 3KW, thickness 2nm; Kufil layer adopts DC pulse sputtering sedimentation in argon atmospher: vacuum magnetic-control sputtering equipment is 2KW, thickness 15nm, and in Kufil, the silver amount ratio of components of copper is 1:1; Chromic acid nickel dam adopts DC pulse sputtering sedimentation in argon atmospher: vacuum magnetic-control sputtering equipment is 3KW, thickness 2nm; Zinc stannate layer adopts intermediate frequency power supply to add rotating cathode sputtering sedimentation in argon oxygen atmosphere: vacuum magnetic-control sputtering equipment is 50～60KW, and intermediate frequency power supply frequency is 40KHz, thickness 10nm; Silicon nitride layer adopts intermediate frequency power supply to add rotating cathode sputtering sedimentation in argon nitrogen atmosphere: vacuum magnetic-control sputtering equipment is 80～90KW, and intermediate frequency power supply frequency is 40KHz, thickness 35nm.
Refer to Fig. 3, be depicted as the prepared full solid thin film electrochomeric glass of the present embodiment 2 transmitance variation diagram in visible-range.As can be seen from Figure 3, in the state of fading, the visible light transmissivity of the prepared full solid thin film electrochomeric glass of embodiment 2 is 40%～50%, and at coloured state, and the visible light transmissivity of the prepared full solid thin film electrochomeric glass of embodiment 2 is 5%～15%; As can be seen here, the full solid thin film electrochomeric glass that embodiment 2 is prepared, realizes the compound of Low-e film and electrochromic film, realizes the controlled and low radiation effect of the visible light transmissivity of intelligent glass.
The above, it is only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction, although the present invention discloses as above with preferred embodiment, but not in order to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, when can utilizing the technology contents of above-mentioned announcement to make a little change or being modified to the equivalent embodiment of equivalent variations, in every case be not depart from technical solution of the present invention content, any simple modification of above embodiment being done according to technical spirit of the present invention, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (10)
1. a full solid thin film electrochomeric glass; it comprises substrate, it is characterized in that: this full solid thin film electrochomeric glass also comprises and is formed at successively this on-chip ion barrier layer, the first transparency conducting layer, inorganic photochromic layer, mineral ion conductor layer, mineral ion by vapour deposition process and stores layer, the second transparency conducting layer and protective layer.
2. full solid thin film electrochomeric glass as claimed in claim 1, is characterized in that: this substrate is ultra-clear glasses, and its thickness is 3～10 millimeters.
3. full solid thin film electrochomeric glass as claimed in claim 2, is characterized in that: the thickness of this substrate is 6 millimeters.
4. full solid thin film electrochomeric glass as claimed in claim 1; it is characterized in that: the thickness of this ion barrier layer is 15～30 nanometers; the thickness of this first transparency conducting layer is that the thickness of 100～600 nanometers, this inorganic photochromic layer is that the thickness of 50～300 nanometers, this mineral ion conductor layer is that thickness that 200～1200 nanometers, this mineral ion store layer is that the thickness of 0～700 nanometer, this second transparency conducting layer is 100～600 nanometers, and the thickness of this protective layer is 30～50 nanometers.
5. full solid thin film electrochomeric glass as claimed in claim 4; it is characterized in that: the thickness of this ion barrier layer is 17～23 nanometers; the thickness of this first transparency conducting layer is that the thickness of 200～300 nanometers, this inorganic photochromic layer is that the thickness of 150～250 nanometers, this mineral ion conductor layer is that thickness that 500～1000 nanometers, this mineral ion store layer is that the thickness of 200～550 nanometers, this second transparency conducting layer is 100～300 nanometers, and the thickness of this protective layer is 34～43 nanometers.
6. full solid thin film electrochomeric glass as claimed in claim 1, is characterized in that: the nitride of oxide compound, titanyl compound or silicon that this ion barrier layer comprises silicon; This first transparency conducting layer comprises tin indium oxide, Al-Doped ZnO, fluorine doped tin oxide or lithium silver alloys; This inorganic photochromic layer comprises Tungsten oxide 99.999, molybdenum oxide, niobium oxides, titanium oxide, nickel oxide, iridium oxide, vanadium oxide, rhodium oxide or cobalt oxide; Nitride, the oxide compound of chromium or the oxide compound of tantalum that this mineral ion conductor layer comprises Trilithium phosphate, nitrogenize Trilithium phosphate, lithium silicate, lithium aluminate, lithium aluminosilicate, lithium chromate, sulfuric acid boron lithium, lithium vanadate, lithium tantalate, lithium; This mineral ion stores layer and comprises lithium, cobalt acid lithium, iron lithium phosphate, lithium titanate, lithium nickelate, lithium manganate, lithium chromate, Quilonum Retard, lithium vanadate, vanadic acid nickel lithium, the oxide compound of nickel, the oxide compound of vanadium, oxide compound or the titanyl compound of molybdenum; This second transparency conducting layer comprises tin indium oxide, Al-Doped ZnO, fluorine doped tin oxide, lithium silver alloys or low radiative recombination layer; The nitride that this protective layer comprises silicon, the oxide compound of silicon or titanyl compound.
7. a preparation method for full solid thin film electrochomeric glass, it comprises the following steps:
Substrate is positioned over to vacuum sputtering district; And
On this substrate, form successively ion barrier layer, the first transparency conducting layer, inorganic photochromic layer, mineral ion conductor layer, mineral ion storage layer, the second transparency conducting layer and protective layer by vapour deposition process.
8. the preparation method of full solid thin film electrochomeric glass according to claim 7, is characterized in that: this vapour deposition process is magnetron sputtering.
9. the preparation method of full solid thin film electrochomeric glass according to claim 8, is characterized in that: the base vacuum degree in this vacuum sputtering district is less than 5.0 × 10-6 millibar.
10. the preparation method of full solid thin film electrochomeric glass according to claim 8, is characterized in that: the process that forms successively ion barrier layer, the first transparency conducting layer, inorganic photochromic layer, mineral ion conductor layer, mineral ion storage layer, the second transparency conducting layer and protective layer by vapour deposition process on this substrate is:
With this blocking layer of rotating cathode DC magnetron reactive sputtering formation of deposits;
Add this first transparency conducting layer of pulsed magnetron sputtering formation of deposits with planar cathode or rotating cathode, direct current or direct current;
With planar cathode or dual rotary negative electrode, direct current adds pulsed magnetron sputtering or radio frequency reaction magnetron sputtering deposition forms this inorganic photochromic layer;
Form this ionophore layer with planar cathode or dual rotary negative electrode, radio frequency reaction magnetron sputtering deposition;
Form this ion storage layer with planar cathode or dual rotary negative electrode, radio frequency reaction magnetron sputtering deposition;
Add this transparency conducting layer of pulsed magnetron sputtering formation of deposits with planar cathode or rotating cathode, direct current or direct current; And
Form this protective layer with rotating cathode direct current reaction magnetron sputtering.
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