CN103762948A - 一种集成于片上系统的cmos 射频功率放大器 - Google Patents
一种集成于片上系统的cmos 射频功率放大器 Download PDFInfo
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- CN103762948A CN103762948A CN201310724049.7A CN201310724049A CN103762948A CN 103762948 A CN103762948 A CN 103762948A CN 201310724049 A CN201310724049 A CN 201310724049A CN 103762948 A CN103762948 A CN 103762948A
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106055008A (zh) * | 2016-06-15 | 2016-10-26 | 泰凌微电子(上海)有限公司 | 电流偏置电路及提高正温度系数的方法 |
CN107086879A (zh) * | 2017-02-27 | 2017-08-22 | 宇龙计算机通信科技(深圳)有限公司 | 可调射频电路、通信终端及可调射频电路控制方法 |
CN108155880A (zh) * | 2018-02-22 | 2018-06-12 | 北京遥感设备研究所 | 一种新型可编程毫米波数字功率放大器 |
CN108462476A (zh) * | 2018-02-08 | 2018-08-28 | 芯原微电子(上海)有限公司 | 一种功率放大器及其功率控制方法 |
CN113162564A (zh) * | 2021-03-25 | 2021-07-23 | 成都知融科技股份有限公司 | 片上具有温度补偿功能的cmos功率放大器 |
WO2024077973A1 (zh) * | 2022-10-09 | 2024-04-18 | 芯翼信息科技(上海)有限公司 | 集成cmos功率放大器宽电压发射机和收发机 |
Citations (4)
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---|---|---|---|---|
US20080130186A1 (en) * | 2006-11-30 | 2008-06-05 | Hisanori Nagase | Pwm drive apparatus and method for correcting output offset thereof |
CN201298848Y (zh) * | 2008-11-11 | 2009-08-26 | 无锡雷华网络技术有限公司 | 宽带光电转换自动增益控制电路结构 |
CN101771386A (zh) * | 2008-12-30 | 2010-07-07 | 龙鼎微电子(上海)有限公司 | 具有抗饱和失真电路的d类音频功率放大器 |
CN102684616A (zh) * | 2012-05-09 | 2012-09-19 | 惠州市正源微电子有限公司 | 采用cmos工艺实现的射频功率放大器 |
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2013
- 2013-12-24 CN CN201310724049.7A patent/CN103762948B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080130186A1 (en) * | 2006-11-30 | 2008-06-05 | Hisanori Nagase | Pwm drive apparatus and method for correcting output offset thereof |
CN201298848Y (zh) * | 2008-11-11 | 2009-08-26 | 无锡雷华网络技术有限公司 | 宽带光电转换自动增益控制电路结构 |
CN101771386A (zh) * | 2008-12-30 | 2010-07-07 | 龙鼎微电子(上海)有限公司 | 具有抗饱和失真电路的d类音频功率放大器 |
CN102684616A (zh) * | 2012-05-09 | 2012-09-19 | 惠州市正源微电子有限公司 | 采用cmos工艺实现的射频功率放大器 |
Non-Patent Citations (2)
Title |
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张承 等: "一种基于PWM的CMOS误差放大器的设计", 《电子设计过程》 * |
杨鹏 等: "基于PWM的D类音频功率放大器设计", 《中国集成电路》 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106055008A (zh) * | 2016-06-15 | 2016-10-26 | 泰凌微电子(上海)有限公司 | 电流偏置电路及提高正温度系数的方法 |
CN106055008B (zh) * | 2016-06-15 | 2019-01-11 | 泰凌微电子(上海)有限公司 | 电流偏置电路及提高正温度系数的方法 |
CN107086879A (zh) * | 2017-02-27 | 2017-08-22 | 宇龙计算机通信科技(深圳)有限公司 | 可调射频电路、通信终端及可调射频电路控制方法 |
CN108462476A (zh) * | 2018-02-08 | 2018-08-28 | 芯原微电子(上海)有限公司 | 一种功率放大器及其功率控制方法 |
CN108462476B (zh) * | 2018-02-08 | 2022-04-12 | 芯原微电子(上海)股份有限公司 | 一种功率放大器及其功率控制方法 |
CN108155880A (zh) * | 2018-02-22 | 2018-06-12 | 北京遥感设备研究所 | 一种新型可编程毫米波数字功率放大器 |
CN113162564A (zh) * | 2021-03-25 | 2021-07-23 | 成都知融科技股份有限公司 | 片上具有温度补偿功能的cmos功率放大器 |
WO2024077973A1 (zh) * | 2022-10-09 | 2024-04-18 | 芯翼信息科技(上海)有限公司 | 集成cmos功率放大器宽电压发射机和收发机 |
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CN103762948B (zh) | 2016-09-28 |
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Denomination of invention: Complementary metal-oxide-semiconductor transistor (CMOS) radio frequency power amplifier integrated on system on chip Effective date of registration: 20170929 Granted publication date: 20160928 Pledgee: National integrated circuit industry investment fund, Limited by Share Ltd Pledgor: VeriSilicon Holdings Co., Ltd.|VeriSilicon Microelectronics (Shanghai) Co., Ltd.|VERISILICON MICROELECTRONICS (CHENGDU) CO., LTD.|VeriSilicon Microelectronics (Beijing) Co., Ltd. Registration number: 2017990000922 |
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Date of cancellation: 20190415 Granted publication date: 20160928 Pledgee: National integrated circuit industry investment fund, Limited by Share Ltd Pledgor: VeriSilicon Holdings Co., Ltd.|VeriSilicon Microelectronics (Shanghai) Co., Ltd.|VERISILICON MICROELECTRONICS (CHENGDU) CO., LTD.|VeriSilicon Microelectronics (Beijing) Co., Ltd. Registration number: 2017990000922 |
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Address after: Zhangjiang Building 20A, 289 Chunxiao Road, China (Shanghai) Free Trade Pilot Area, Pudong New Area, Shanghai Co-patentee after: VeriSilicon Microelectronics (Beijing) Co., Ltd. Patentee after: Xinyuan Microelectronics (Shanghai) Co., Ltd. Co-patentee after: VERISILICON MICROELECTRONICS (CHENGDU) CO., LTD. Co-patentee after: Core holdings limited company Address before: 201203 Zhangjiang Building 20A, 560 Songtao Road, Zhangjiang High-tech Park, Pudong New Area, Shanghai Co-patentee before: VeriSilicon Microelectronics (Beijing) Co., Ltd. Patentee before: VeriSilicon Microelectronics (Shanghai) Co., Ltd. Co-patentee before: VERISILICON MICROELECTRONICS (CHENGDU) CO., LTD. Co-patentee before: VeriSilicon Holdings Co., Ltd. |