CN103762313A - Manufacturing method of top gate thin film transistor - Google Patents
Manufacturing method of top gate thin film transistor Download PDFInfo
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- CN103762313A CN103762313A CN201110461858.4A CN201110461858A CN103762313A CN 103762313 A CN103762313 A CN 103762313A CN 201110461858 A CN201110461858 A CN 201110461858A CN 103762313 A CN103762313 A CN 103762313A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 83
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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Abstract
The invention provides a manufacturing method of a top gate thin film transistor. The manufacturing method of the top gate thin film transistor comprises the following steps that: strip-shaped protruding teeth are formed on the surface of the substrate, and grooves are formed between the protruding teeth, and the cross section of the protruding teeth is rectangle-shaped; 2) a polysilicon thin film is deposited and uniformly coats top portions of the protruding teeth as well as side surfaces and bottom portions of the grooves; 3) ion implantation is performed on the polysilicon thin film, and the angle of the ion implantation enables one part of the polysilicon thin film doped and the other part of the polysilicon thin film undoped, wherein the doped part form a bridged-grain line as well as a source region and a drain region; 4) a gate insulating layer is deposited on the polysilicon thin film; and 5) a gate electrode is formed on the gate insulating layer and covers the protruding teeth and the grooves between the protruding teeth of the polysilicon thin film.
Description
Technical field
The present invention relates to polycrystalline SiTFT (TFT) technology, more specifically, relate to a kind of polycrystalline SiTFT and manufacture method thereof with bridged-grain structures.
Background technology
For realizing the industrialization manufacture of multi-crystal TFT Active Matrix Display panel, conventionally need high-quality polysilicon film, and meet following requirement: low temperature process, can be lining with in large-area glass the high reliability of realization, low manufacturing cost, stable manufacturing process, high-performance, consistency and multi-crystal TFT.
High temperature polysilicon technology can be used for realizing high performance TFT, but the simple glass substrate that it can not use for business display pannel.Under such situation, must use low temperature polycrystalline silicon (LTPS).There are three kinds of main LTPS technology: 1, by the solid-phase crystallization (SPC) at 600 ℃ of long term annealings; 2, Excimer-Laser Crystallization (ELC) or flash lamp annealing; 3, crystallization inducing metal (MIC) and relevant variant thereof.ELC can produce best result, but both expensive.SPC cost is minimum, but the processing time is long.
Notice, all polycrystal film materials are common, and the crystal grain of film is in size, crystal orientation and random distribution substantially in shape, and crystal boundary is conventionally also harmful to the formation of good TFT.When this polycrystal film is used as the active layer in TFT, electrical characteristics depend in active channel, there are how many grain and grain boundaries.
The common issue of all prior aries is that they form much crystal grain with unpredictable pattern (pattern) in TFT active channel.The distribution of crystal grain is random, makes electrical characteristics skewness on substrate of TFT.The wide distribution of these electrical characteristics is harmful to and can causes the problem such as mura defect and brightness irregularities the performance of display.
For any semi-conducting material for example silicon, germanium, sige alloy, iii v compound semiconductor and organic semiconductor, the transistorized crystal grain of polycrystal film can form random network.The conduction of crystal grain inside is almost identical with crystalline material, and it is poorer to stride across the conduction of crystal boundary, and increases threshold voltage.Active channel at the thin-film transistor of being made by this polycrystal film (TFT) is inner, and grainiess is almost two-dimensional random network, and randomness and consequential variable-conductance adversely affect display performance and picture quality.
Typical polysilicon structure as shown in Figure 1a, low temperature polycrystalline silicon film 1101, it comprises crystal grain 1102.Between adjacent crystal grain 1102, there is obvious crystal boundary 1103.The length scale of each crystal grain 1102 from tens nanometer to several microns not etc., and be considered to monocrystalline; The defect distribution of many dislocations, stacking fault and dangling bonds is in described crystal boundary 1103.Due to different preparation methods, the crystal grain 1102 of low temperature polycrystalline silicon film 1101 inside can random distribution or along definite orientation.As for conventional low temperature polycrystalline silicon film 1101, in crystal boundary 1103, there is serious defect, as shown in Figure 1 b.Major defect in crystal boundary 1103 will be introduced high potential barrier 1104, perpendicular to the described potential barrier 1104 that transports direction (or incline and tremble the vertical component of potential barrier) of charge carrier 1105, will affect initial condition and the ability of charge carrier.For the thin-film transistor of manufacturing on this low temperature polycrystalline silicon film 1101, threshold voltage and field-effect mobility are subject to 1104 restrictions of crystal boundary potential barrier.The crystal boundary 1103 being distributed in when high reverse gate voltage is applied in TFT in tie region also will cause large leakage current.
In US Patent No. 2010/0171546A1, disclosed the polycrystalline SiTFT (TFT) of a kind of bridged-grain (BG) structure.Adopt doping BG polysilicon lines, intrinsic-OR light dope passage is separated into a plurality of regions.Single gate has covered the whole active channel that comprises the line that adulterates, and is used for controlling flowing of electric current.Use BG polysilicon as active layer, TFT is designed to make electric current vertical current to cross the parallel lines of passage crystal region, thereby can reduce the impact of crystal boundary.Compare with traditional low temperature polycrystalline silicon TFT, the reliability of BG multi-crystal TFT, uniformity and electric property are all significantly improved.
, from US Patent No. 2010/0171546A1, also can know meanwhile, obtain high reliability and inhomogeneity BG TFT, must active area be separated into a plurality of regions with BG line, form a series of PN junction, this number that just means BG line can not be very little.Restriction due to existing photoetching process, the minimum widith of the BG line forming is generally 0.5 micron of left and right, consider the factors such as BG etween the lines diffusion short circuit simultaneously, interval between BG line can not be too little, take 0.5 micron of left and right as good, and this has also just determined will the growing of the general TFT of active channel Length Ratio of BG TFT.From the preferred embodiment of US Patent No. 2010/0171546A1, the active channel length of BG TFT is 10 microns, this be general TFT active channel length 2-3 doubly.Longer active channel just means in occupation of larger space, and this is also unfavorable for wiring and aperture opening ratio backward.
Summary of the invention
For overcoming the above problems, the invention provides a kind of manufacture method with bridged-grain (BG) structure polysilicon membrane, and utilize the method to manufacture the manufacture method of thin-film transistor, in the situation that do not increase extra photoetching process, can reduce active channel area occupied.
The manufacture method that the invention provides a kind of polysilicon membrane, comprising: the depression or the bulge-structure that 1) on substrate, form strip; 2) deposited polycrystalline silicon thin film on the surface of this depression or bulge-structure; 3) polysilicon membrane is carried out to Implantation, the angle of Implantation is doped part polysilicon membrane, makes part polysilicon membrane not adulterate simultaneously, forms bridged-grain line.
According to manufacture method provided by the invention, wherein said polysilicon membrane covers each surface of depression or bulge-structure equably.According to manufacture method provided by the invention, the depression of wherein said strip or the cross section of bulge-structure are rectangle.According to manufacture method provided by the invention, the depression of wherein said strip or the cross section of bulge-structure are V-shape.According to manufacture method provided by the invention, wherein the direction of Implantation is perpendicular to substrate.According to manufacture method provided by the invention, wherein the angle between Implantation direction and substrate is less than or equal to side of V-shape and the angle between substrate.
The present invention also provides a kind of manufacture method of thin-film transistor, comprising: 1) utilize said method to form the polysilicon membrane with bridged-grain line structure; 2), using this polysilicon membrane as active layer, form gate insulation layer, grid, source electrode and drain electrode.
The present invention also provides a kind of manufacture method of thin-film transistor, comprising: 1) on substrate, form grid, and on grid, form depression or the bulge-structure of strip; 2) on the depression of this strip or bulge-structure, deposit gate insulator, then deposited polycrystalline silicon thin film on gate insulator; 3) polysilicon membrane is carried out to Implantation, the angle of Implantation is doped part polysilicon membrane, makes part polysilicon membrane not adulterate simultaneously, forms bridged-grain line; 4) using step 3) polysilicon membrane that obtains is as active layer, forms source electrode and drain electrode.
The polysilicon membrane that the present invention also provides a kind of said method to prepare.
The thin-film transistor that the present invention also provides a kind of said method to prepare.
The present invention is different from the solid type raceway groove of active channel shape of the plane of traditional B G TFT by design, in the situation that do not increase extra photoetching process, reduce BG structure TFT and taken the ratio of elemental area, thereby increased the aperture opening ratio of oled panel, and the more flexibility that makes to connect up.
For the TFT of same size, also can utilize active channel structure provided by the invention, increase the contact-making surface of grid and active layer, thereby increase the electric control ability of grid to channel layer.Except advantage recited above and when keeping well the advantage of BG multi-crystal TFT, the doping of BG line and source-drain electrode can also be adulterated and be merged into a step, simplify further technique.
Accompanying drawing explanation
Fig. 1 a is typical polysilicon structure in prior art;
Fig. 1 b is the schematic diagram of the corresponding potential barrier of Fig. 1 a;
Fig. 2 a is the polysilicon membrane cross sectional representation after ion doping;
Fig. 2 b is that sputter gate metal etching form the polysilicon membrane cross sectional representation after gate pattern;
Fig. 2 c is the top gate polysilicon TFT cross sectional representation of " recessed " font active channel;
Fig. 3 is the bottom gate multi-crystal TFT cross sectional representation of " recessed " font active channel;
After Fig. 4 is V-shape polysilicon channel doping, polysilicon membrane cross sectional representation.
Embodiment
Below in conjunction with the drawings and specific embodiments, a kind of bridged-grain polycrystalline SiTFT and manufacture method thereof that reduces active channel area occupied provided by the invention is described in detail.Here do to illustrate, in order to make embodiment more detailed, the following examples are best, preferred embodiment, for some known technology those skilled in the art, also can adopt other alternative and implement simultaneously; Meanwhile, accompanying drawing is not strictly to draw in proportion, and its emphasis is to be only placed in disclosed principle.
The present invention adopts has the solid type raceway groove of relief fabric, thereby reached, saves taking up room of active channel, increases the object of the aperture opening ratio of panel, and specific implementation method is as follows:
Embodiment 1
The present embodiment provides a kind of manufacture method with the polysilicon membrane of bridged-grain (BG) structure, comprising:
1), as shown in accompanying drawing 2a, in glass substrate 101, deposit the low temperature oxide that a layer thickness is 600nm (LTO) as barrier layer 201, again barrier layer 201 is etched into rectangle concaveconvex structure as shown in Figure 2 a, the width of its further groove is 600nm, the degree of depth is 500nm, and convex tooth width is 400nm;
2), on barrier layer 201, form the polysilicon layer 301 that a layer thickness is 50nm, polysilicon layer 301 is the top of the double wedge of covering barrier layer 201 and the sidewall of groove and bottom equably;
3), polysilicon layer 301 is carried out to Implantation, the direction of Implantation is perpendicular to glass substrate, thereby the part polysilicon layer 301 of the top of double wedge and the bottom of groove is doped, and forms BG line 302, and the sidewall of groove is not doped, form non-doped portion 303.
The present embodiment has the stereochemical structure of relief fabric by barrier layer is formed, can greatly save taking up room of active channel, by controlling the direction of Implantation, be formed self-aligned BG line in addition, without mask lithography technique, simplified technique, saved cost.
Embodiment 2
The present embodiment provides a kind of manufacture method of thin-film transistor, comprising:
1), adopt the method that above-described embodiment 1 provides to prepare the polysilicon layer 301 with BG line;
2), as shown in Figure 2 b, according to the layout designing, utilize mask lithography technology to be etched into isolated silicon island polysilicon layer 301;
3), with LPCVD (low-pressure chemical vapor deposition), directly on polysilicon layer 301, deposit the LTO gate insulation layer 401 that a layer thickness is 80nm;
4), depositing Al/Si-1% alloy on gate insulation layer 401, as grid layer, the thickness of grid layer is 500nm, and photoetched grid layer becomes gate electrode 501, make gate electrode 501 cover the embossed area of polysilicon layer, the region that grid both sides are not capped and are doped is as source region and drain region;
5), utilize PECVD (plasma enhanced chemical vapor deposition) deposition oxide interlayer insulator 601, then in interlevel insulator 601, form contact hole, sputtered aluminum-1% silicon is as source-drain electrode contact electrode;
6), sintering carry out dopant activation, form the top gate polysilicon TFT with " recessed " font active channel as shown in Figure 2 c.
The shared area of BG active channel of supposing US Patent No. 2010/0171546A1 is that (what wherein W was active channel is wide for W * L, L is the length of active channel), from this embodiment, can find out, due to non-doped region 303 has been erected, thereby the space that non-doped region is taken has been saved.If the length of Yu Fei doped region, doped region is the same, the shared area of active channel has just almost been saved half, is about W * L/2.
By controlling the direction of Implantation, be formed self-aligned BG line in addition, without mask lithography technique, and being entrained in same step of the doping of BG line and source-drain area complete, and simplified further technique.
Embodiment 3
The present embodiment provides a kind of manufacture method of thin-film transistor, comprising:
1), as shown in Figure 3, depositing Al/Si-1% alloy in glass substrate 101, as grid layer, the thickness of grid layer is 500nm, again grid layer 201 is etched into concaveconvex structure as shown in Figure 2 a, forms the gate electrode 501 with concaveconvex structure, the width of its further groove is 600nm, the degree of depth is 500nm, and convex tooth width is 400nm;
2), on gate electrode 501, form the LTO gate insulation layer 401 that a layer thickness is 80nm, the top of the double wedge in cover gate and the sidewall of groove and bottom, and the glass substrate of the end face at cover gate two ends and grid both sides;
3) polysilicon layer 301 that, deposit thickness is 50nm on gate insulation layer 401, the top of double wedge in polysilicon layer 301 cover gate and the sidewall of groove and bottom, and the gate insulation layer 401 in the glass substrate of the end face at cover gate two ends and grid both sides;
4), polysilicon layer 301 is carried out to Implantation, the direction of Implantation is perpendicular to glass substrate, thereby the part polysilicon layer 301 of the top of double wedge and the bottom of groove is doped, form BG line 302, make the polysilicon layer 301 of grid both sides be doped and form source region and drain region, and the end face at the sidewall of groove and grid two ends is not doped, form non-doped portion 303;
5), according to the layout designing, utilize mask lithography technology to be etched into isolated silicon island polysilicon layer 301;
6), utilize PECVD (plasma enhanced chemical vapor deposition) deposition oxide interlayer insulator 601, then in interlevel insulator 601, form contact hole, sputtered aluminum-1% silicon is as source-drain electrode contact electrode;
7), sintering carry out dopant activation, form the bottom gate multi-crystal TFT with " recessed " font active channel as shown in Figure 3.
The bottom gate multi-crystal TFT that the present embodiment provides, without considering coarse alignment problem, and can guarantee that gate electrode covers concavo-convex polysilicon active area completely.
Embodiment 4
The present embodiment provides a kind of manufacture method with bridged-grain (BG) structure polysilicon membrane, comprising:
1), as shown in Figure 4, in glass substrate 101, deposit the low temperature oxide that a layer thickness is 600nm (LTO) as barrier layer 201, then barrier layer 201 is etched into V-shape groove structure as shown in Figure 4;
2), on barrier layer 201, form the polysilicon layer 301 that a layer thickness is 50nm, polysilicon layer 301 covers each sidewall of V-shape groove structure equably;
3), polysilicon layer 301 is carried out to Implantation, the direction of Implantation is parallel to a side of V-shape groove, thereby make the part polysilicon layer 301 on side of V-shape groove be doped formation BG line 302, and part polysilicon layer 301 on another side is not doped, form non-doped portion 303.
The present embodiment has the stereochemical structure of relief fabric by barrier layer is formed, greatly save taking up room of active channel, by controlling the direction of Implantation, be formed self-aligned BG line in addition, without mask lithography technique, simplified technique, saved cost.
According to one embodiment of present invention, wherein by being deposited on, polysilicon membrane has on the depression of strip or the surface of bulge-structure, thereby make polysilicon membrane there is the structure that height rises and falls, wherein the shape of the depression of this strip or the cross section of bulge-structure is not limited to above-mentioned rectangle, V-shape, can be also other shapes.
According to one embodiment of present invention, wherein the depression of strip or the number of bulge-structure are not limited to the number shown in the accompanying drawing of above-described embodiment.
According to one embodiment of present invention, wherein the angle of Implantation is also not limited to the angle in above-described embodiment, can coordinate the relief fabric of polysilicon membrane to select implant angle, and part polysilicon membrane is doped, make part polysilicon membrane not adulterate simultaneously, thereby form BG line.For example, in above-described embodiment 1, the direction of Implantation can be a smaller angle with substrate, thereby a sidewall of double wedge top and groove is doped, and another sidewall of bottom portion of groove and groove is not doped.Again for example in above-described embodiment 4, the angle between Implantation direction and substrate can be less than side of V-shape and the angle between substrate.
Although the present invention is made to specific descriptions with reference to the above embodiments, but for the person of ordinary skill of the art, above embodiment is only in order to describe technical scheme of the present invention but not this technical method is limited, the present invention can extend to other modification, variation, application and embodiment in application, and therefore thinks that all such modifications, variation, application, embodiment are in spirit of the present invention and teachings.
Claims (10)
1. a manufacture method for top-gate thin-film transistors, comprising:
1), on substrate surface, form the double wedge of strip, between double wedge, there is groove, the cross section of double wedge is rectangle;
2), deposited polycrystalline silicon thin film, cover equably the top of double wedge and the sidewall of groove and bottom;
3), polysilicon membrane is carried out to Implantation, the angle of Implantation is doped part polysilicon membrane, makes part polysilicon membrane not adulterate simultaneously, and wherein the part of doping forms bridged-grain line and source region and drain region;
4), on polysilicon membrane, deposit gate insulation layer;
5), on gate insulation layer, form gate electrode, make gate electrode cover the double wedge of polysilicon membrane and the groove between double wedge.
2. manufacture method according to claim 1, wherein, convex tooth width is 400nm, the width of groove is that 600nm, the degree of depth are 500nm.
3. manufacture method according to claim 1, also comprises step 6): deposition interlevel insulator then forms contact hole in interlevel insulator.
4. manufacture method according to claim 3, also comprises step 7): in contact hole, sputtered aluminum-1% silicon is as source-drain electrode contact electrode.
5. manufacture method according to claim 1, wherein, the direction of Implantation, perpendicular to substrate surface, is doped the polysilicon membrane of double wedge top and bottom portion of groove, and the polysilicon membrane of recess sidewall is not doped.
6. a top-gate thin-film transistors, its active layer consists of polysilicon membrane, this polysilicon membrane is grown on the substrate surface of the double wedge with strip, between double wedge, there is groove, the cross section of double wedge is rectangle, and polysilicon membrane covers the top of double wedge and the sidewall of groove and bottom equably, and wherein part polysilicon membrane is doped, part polysilicon membrane does not adulterate, and wherein the part of doping forms bridged-grain line and source region and drain region.
7. thin-film transistor according to claim 6, also comprises the gate insulation layer on polysilicon membrane.
8. thin-film transistor according to claim 6, also comprises the gate electrode on gate insulation layer, and gate electrode covers the groove between double wedge and double wedge.
9. thin-film transistor according to claim 6, wherein, convex tooth width is 400nm, the width of groove is that 600nm, the degree of depth are 500nm.
10. thin-film transistor according to claim 6, wherein, polysilicon membrane is doped by Implantation, and the direction of Implantation is perpendicular to substrate surface, the polysilicon membrane of double wedge top and bottom portion of groove is doped, and the polysilicon membrane of recess sidewall is not doped.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104037214A (en) * | 2014-06-26 | 2014-09-10 | 中国电子科技集团公司第十三研究所 | Grid-control semiconductor device for improving short channel effect |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001127301A (en) * | 1999-10-27 | 2001-05-11 | Sanyo Electric Co Ltd | Semiconductor device and manufacturing method therefor |
| US20010019863A1 (en) * | 1999-12-31 | 2001-09-06 | Myoung-Su Yang | Method of forming a polycrystalline silicon layer |
| US20030183875A1 (en) * | 2001-12-28 | 2003-10-02 | Atsuo Isobe | Semiconductor device and semiconductor device production system |
| CN1770474A (en) * | 2004-06-14 | 2006-05-10 | 株式会社半导体能源研究所 | Semiconductor device and method of fabricating the same |
| CN101681930A (en) * | 2007-06-22 | 2010-03-24 | 香港科技大学 | Polycrystalline silicon thin film transistors with bridged-grain structures |
| WO2010091932A1 (en) * | 2009-02-10 | 2010-08-19 | International Business Machines Corporation | Fin and finfet formation by angled ion implantation |
| CN202405325U (en) * | 2011-12-31 | 2012-08-29 | 广东中显科技有限公司 | Top gate thin film transistor |
-
2011
- 2011-12-31 CN CN201110461858.4A patent/CN103762313A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001127301A (en) * | 1999-10-27 | 2001-05-11 | Sanyo Electric Co Ltd | Semiconductor device and manufacturing method therefor |
| US20010019863A1 (en) * | 1999-12-31 | 2001-09-06 | Myoung-Su Yang | Method of forming a polycrystalline silicon layer |
| US20030183875A1 (en) * | 2001-12-28 | 2003-10-02 | Atsuo Isobe | Semiconductor device and semiconductor device production system |
| CN1770474A (en) * | 2004-06-14 | 2006-05-10 | 株式会社半导体能源研究所 | Semiconductor device and method of fabricating the same |
| CN101681930A (en) * | 2007-06-22 | 2010-03-24 | 香港科技大学 | Polycrystalline silicon thin film transistors with bridged-grain structures |
| WO2010091932A1 (en) * | 2009-02-10 | 2010-08-19 | International Business Machines Corporation | Fin and finfet formation by angled ion implantation |
| CN202405325U (en) * | 2011-12-31 | 2012-08-29 | 广东中显科技有限公司 | Top gate thin film transistor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037214A (en) * | 2014-06-26 | 2014-09-10 | 中国电子科技集团公司第十三研究所 | Grid-control semiconductor device for improving short channel effect |
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