CN103760422A - Device and method for testing resistivity of dielectric material in light - Google Patents
Device and method for testing resistivity of dielectric material in light Download PDFInfo
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- CN103760422A CN103760422A CN201310722884.7A CN201310722884A CN103760422A CN 103760422 A CN103760422 A CN 103760422A CN 201310722884 A CN201310722884 A CN 201310722884A CN 103760422 A CN103760422 A CN 103760422A
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Abstract
The invention provides a device and method for testing resistivity of a dielectric material in light. The device for testing the resistivity of the dielectric material in light comprises a target chamber, a solar simulator, a quartz window, a vacuum pumping system, the dielectric material, a temperature control device, a workbench, a voltage source, a power source and an electrometer, wherein the solar simulator is used for simulating the light environment, the temperature control device is used for controlling the dielectric material to be at the constant temperature, the power source is used for supplying electricity to the temperature control device, the quartz window is installed on the top of the target chamber, the workbench is installed on the bottom surface of the target chamber, the temperature control device is placed on the workbench, the dielectric material is placed on the temperature control device, the voltage source, the power source, the electrometer, the solar stimulator and the vacuum pumping system are arranged outside the target chamber, one end of the voltage source is connected with a voltage electrode of the dielectric material, the other end of the voltage source is grounded, the power source is connected with the temperature control device, one end of the electrometer is connected with a guard electrode of the dielectric material, and the other end of the electrometer is grounded. According to the device and method for testing the resistivity of the dielectric material in light, accuracy of tests of the resistivity of the dielectric material in light can be improved.
Description
Technical field
The present invention relates to field of measuring technique, particularly dielectric material resistivity measurement device and method under a kind of illumination.
Background technology
While there is magnetospheric substorm in space, the shadow region surface charging of satellite is to thousands of volts (negative potential), and illumination surface still remains on just several volts, so it is poor between the dielectric surface of shade and non-shade zone, can to produce high potential.Add and between shade and non-shade zone, have the huge temperature difference, and temperature also can be brought impact to the resistivity of dielectric material.In this case, because the electrical resistivity property of different medium material is different, between different materials, will produce serious inequality charged, once the potential difference (PD) between bi-material surpasses electrostatic breakdown threshold value, will there is static discharge, will bring huge threat to the safety and stability in-orbit of satellite.Therefore the resistivity of dielectric material under illumination and under different temperatures can exert an influence to satellite hot-line electrical potential and structure current potential, and dielectric material resistivity is to affect a charged key factor of satellite.
Be accompanied by the continuous progress of China's satellite technology, in order to meet satellite long-life, high-performance, highly reliable and high-precision demand, need badly carry out under illumination effect and different temperatures under the testing research of dielectric material resistivity, this will be that satellite discharges and recharges a requisite important content in research and analysis.
Summary of the invention
Provide hereinafter about brief overview of the present invention, to the basic comprehension about some aspect of the present invention is provided.Should be appreciated that this general introduction is not about exhaustive general introduction of the present invention.It is not that intention is determined key of the present invention or pith, and nor is it intended to limit the scope of the present invention.Its object is only that the form of simplifying provides some concept, usings this as the preorder in greater detail of discussing after a while.
The invention provides dielectric material resistivity measurement device and method under a kind of illumination, to improve the accuracy of dielectric material resistivity measurement under illumination.
The invention provides dielectric material resistivity measurement device under a kind of illumination, comprising: target chamber, for the solar simulator of illumination simulation environment, for the quartz window of printing opacity, for by the evacuated vacuum-pumping system of described target chamber, dielectric material, the temperature control equipment that keeps temperature constant for controlling described dielectric material, worktable, voltage source, to power supply and the electrometer of described temperature control equipment power supply;
Wherein, described quartz window is arranged on the top of described target chamber; Described worktable is arranged on the bottom surface of described target chamber; Described temperature control equipment is positioned on described worktable; Described dielectric material is positioned on described temperature control equipment, described dielectric material upper surface is coated with ring electrode and guard electrode, the lower surface of described dielectric material is coated with voltage pole, described voltage pole is connected with the voltage source that is positioned at described target chamber outside, described guard electrode is connected with the electrometer that is positioned at described target chamber outside, described ring electrode ground connection;
It is outside that described voltage source, power supply, electrometer, solar simulator and vacuum-pumping system lay respectively at described target chamber; One end of described voltage source is connected with the voltage pole of dielectric material, the other end ground connection of described voltage source; Described power supply is connected with described temperature control equipment; One end of described electrometer is connected with the guard electrode of dielectric material, the other end ground connection of described electrometer; Described solar simulator is over against described quartz window and be positioned at the top of described quartz window; Described vacuum-pumping system is close to the outer wall of described target chamber.
The present invention also provides a kind of dielectric material resistivity measurement method under illumination, it is characterized in that, uses as dielectric material resistivity measurement device under above-mentioned illumination as described in arbitrary; Under described illumination, dielectric material resistivity measurement method comprises:
Dielectric material is positioned on the temperature control equipment that is positioned at worktable top in target chamber, and described dielectric material upper surface is coated with ring electrode and guard electrode, and the lower surface of described dielectric material is coated with voltage pole;
Opening vacuum-pumping system vacuumizes described target chamber;
Open solar simulator illumination simulation environment;
Power-on is given described temperature control equipment power supply, and described temperature control equipment is controlled described dielectric material and kept temperature constant;
Cut-in voltage source applies voltage to the voltage pole of dielectric material;
The leakage current of the guard electrode by electrometer measuring media material;
The leakage current of the guard electrode that the magnitude of voltage applying by voltage source and described electrometer measure, calculates the resistivity of described dielectric material under different light and different temperatures.
Compared with prior art, the present invention includes following advantage:
Dielectric material resistivity measurement device under illumination provided by the invention, can pass through solar simulator simulate photoenvironment, the quartz window that illumination sees through the top of target chamber impinges upon on dielectric material, by solar simulator, can simulate the intensity of illumination of different solar constants, by temperature control equipment control medium material, remain on different temperatures, then the voltage U applying to the voltage pole of dielectric material by voltage source, leakage current I with the guard electrode of the dielectric material measuring by electrometer, just can calculate the resistivity of the dielectric material of dielectric material under different light and different temperatures.For example, the intensity of illumination of a solar constant of solar simulator simulation, temperature control equipment control medium material remains on 100 ℃, just can be by dielectric material resistivity measurement device under illumination provided by the invention, the resistivity that obtains dielectric material under the illumination of a solar constant and at the temperature of 100 ℃.Due to solar simulator controlled light intensity accurately, temperature control equipment can guarantee the temperature stabilization of dielectric material, therefore can improve the measuring accuracy of dielectric material resistivity, adopt dielectric material resistivity measurement device under illumination provided by the invention, the accuracy of dielectric material resistivity measurement under illumination can be improved, and the resistivity of dielectric material under different light and different temperatures can be measured.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The structured flowchart of dielectric material resistivity measurement device under a kind of illumination that Fig. 1 provides for the embodiment of the present invention;
The electrode schematic diagram of the dielectric material that Fig. 2 provides for the embodiment of the present invention;
The process flow diagram of dielectric material resistivity measurement method under a kind of illumination that Fig. 3 provides for the embodiment of the present invention.
Reference numeral:
1-target chamber; 2-solar simulator; 3-quartz window; 4-vacuum-pumping system; 5-dielectric material; 6-voltage pole; 7-temperature control equipment; 8-worktable; 9-voltage source; 10-power supply; 11-electrometer; 12-ring electrode; 13-guard electrode; The gap of 14-ring electrode and guard electrode.
Embodiment
For making object, technical scheme and the advantage of the embodiment of the present invention clearer, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.The element of describing in an accompanying drawing of the present invention or a kind of embodiment and feature can combine with element and feature shown in one or more other accompanying drawing or embodiment.It should be noted that for purposes of clarity, in accompanying drawing and explanation, omitted expression and the description of unrelated to the invention, parts known to persons of ordinary skill in the art and processing.Embodiment based in the present invention, the every other embodiment that those of ordinary skills obtain under the prerequisite of not paying creative work, belongs to the scope of protection of the invention.
Embodiment mono-:
With reference to Fig. 1, be the structured flowchart of dielectric material resistivity measurement device under a kind of illumination of the embodiment of the present invention, in the present embodiment, under illumination, dielectric material resistivity measurement device specifically can comprise: target chamber, for the solar simulator of illumination simulation environment, for the quartz window of printing opacity, for by the evacuated vacuum-pumping system of described target chamber, dielectric material, the temperature control equipment that keeps temperature constant for controlling described dielectric material, worktable, voltage source, give power supply and the electrometer of described temperature control equipment power supply.
As shown in Figure 1, described quartz window 3 is arranged on the top of described target chamber 1; Described worktable 8 is arranged on the bottom surface of described target chamber 1; Described temperature control equipment 7 is positioned on described worktable 8; Described dielectric material 5 is positioned on described temperature control equipment 7, described dielectric material 5 upper surfaces are coated with ring electrode 12 and guard electrode 13, the lower surface of described dielectric material 5 is coated with voltage pole 6, described voltage pole 6 is connected with the voltage source 9 that is positioned at described target chamber 1 outside, described guard electrode 13 is connected with the electrometer 11 that is positioned at described target chamber outside, described ring electrode 12 ground connection;
Described voltage source 9, power supply 10, electrometer 11, solar simulator 2 and vacuum-pumping system 4 lay respectively at described target chamber 1 outside; One end of described voltage source 9 is connected with the voltage pole 6 of dielectric material 5, the other end ground connection of described voltage source 9; Described power supply 10 is connected with described temperature control equipment 7; One end of described electrometer 11 is connected with the guard electrode 13 of dielectric material 5, the other end ground connection of described electrometer 11; Described solar simulator 2 is over against described quartz window 3 and be positioned at the top of described quartz window 3; Described vacuum-pumping system 4 is close to the outer wall of described target chamber 1.
It should be noted that; in the middle of the ring electrode 12 of dielectric material 5 upper surface platings and guard electrode 13, there is certain interval; as shown in Figure 2; electrode schematic diagram for dielectric material; the annular of outer ring is ring electrode 12; guard electrode 13 is circular electrode, the gap of 14 representative ring electrodes 12 and guard electrode 13 in figure.In a preferred embodiment of the present invention, described ring electrode 12, guard electrode 13 and/or voltage pole 6 are for adopting the metal electrode of sputtering method plating.In another kind of preferred embodiment of the present invention, the model of described electrometer is Keithley6517B.
It should be noted that, solar simulator can be simulated the intensity of illumination of certain solar constant, in a preferred embodiment of the present invention, utilizes the intensity of illumination of a solar constant of solar simulator simulation.Temperature control equipment can remain in certain temperature range by control medium material, and in a preferred embodiment of the present invention, temperature control equipment is the arbitrary temperature value within the scope of 50～150 ℃ by the temperature constant of described dielectric material.
It should be noted that; above-mentioned voltage source 9 apply voltage U can to the voltage pole 6 of dielectric material 5, and the leakage current I of guard electrode 13 that can measuring media material 5 by electrometer 11, according to above-mentioned voltage U and leakage current I; by U/I, can calculate the resistivity R of dielectric material.
Dielectric material resistivity measurement device under the illumination that the present embodiment provides, can pass through solar simulator simulate photoenvironment, the quartz window that illumination sees through the top of target chamber impinges upon on dielectric material, by solar simulator, can simulate the intensity of illumination of different solar constants, by temperature control equipment control medium material, remain on different temperatures, then the voltage U applying to the voltage pole of dielectric material by voltage source, leakage current I with the guard electrode of the dielectric material measuring by electrometer, just can calculate the resistivity of the dielectric material of dielectric material under different light and different temperatures.For example, the intensity of illumination of a solar constant of solar simulator simulation, temperature control equipment control medium material remains on 100 ℃, dielectric material resistivity measurement device under the illumination that just can provide by the present embodiment, the resistivity that obtains dielectric material under the illumination of a solar constant and at the temperature of 100 ℃.Due to solar simulator controlled light intensity accurately, temperature control equipment can guarantee the temperature stabilization of dielectric material, therefore can improve the measuring accuracy of dielectric material resistivity, adopt dielectric material resistivity measurement device under the illumination that the present embodiment provides, the accuracy of dielectric material resistivity measurement under illumination can be improved, and the resistivity of dielectric material under different light and different temperatures can be measured.
Embodiment bis-:
With reference to Fig. 3, be the process flow diagram of dielectric material resistivity measurement method under a kind of illumination of the embodiment of the present invention, the present embodiment can adopt dielectric material resistivity measurement device under any illumination of describing in embodiment mono-.In the present embodiment, under illumination, dielectric material resistivity measurement method specifically can comprise the following steps:
Step 100, is positioned over dielectric material on the temperature control equipment that is positioned at worktable top in target chamber, and described dielectric material upper surface is coated with ring electrode and guard electrode, and the lower surface of described dielectric material is coated with voltage pole.In a preferred embodiment of the present invention, described ring electrode, guard electrode and/or voltage very adopt the metal electrode of sputtering method plating.The electrode schematic diagram of dielectric material as described in Figure 2, specifically describes the related description referring to embodiment mono-, is originally implemented in this and does not repeat.
Dielectric material resistivity measurement method under the illumination that the present embodiment provides; can be by opening solar simulator simulate photoenvironment; by temperature control equipment control medium material, remain on different temperatures; then cut-in voltage source applies voltage to the voltage pole of dielectric material; the leakage current of the guard electrode by electrometer measuring media material; the leakage current I of the guard electrode that the magnitude of voltage U finally applying by voltage source and described electrometer measure, calculates U/I and obtains the resistivity R of described dielectric material under different light and different temperatures.For example, the intensity of illumination of a solar constant of solar simulator simulation, temperature control equipment control medium material remains on 100 ℃, dielectric material resistivity measurement method under the illumination that just can provide by the present embodiment, the resistivity that obtains dielectric material under the illumination of a solar constant and at the temperature of 100 ℃.Due to solar simulator controlled light intensity accurately, temperature control equipment can guarantee the temperature stabilization of dielectric material, therefore can improve the measuring accuracy of dielectric material resistivity, adopt dielectric material resistivity measurement method under the illumination that the present embodiment provides, the accuracy of dielectric material resistivity measurement under illumination can be improved, and the resistivity of dielectric material under different light and different temperatures can be measured.
In the various embodiments described above of the present invention, the sequence number of embodiment and/or sequencing are only convenient to describe, and do not represent the quality of embodiment.Description to each embodiment all emphasizes particularly on different fields, and there is no the part of detailed description in certain embodiment, can be referring to the associated description of other embodiment.
One of ordinary skill in the art will appreciate that: all or part of step that realizes said method embodiment can complete by the relevant hardware of programmed instruction, aforesaid program can be stored in a computer read/write memory medium, this program, when carrying out, is carried out the step that comprises said method embodiment; And aforesaid storage medium comprises: various media that can be program code stored such as ROM (read-only memory) (Read-Only Memory is called for short ROM), random access memory (Random Access Memory is called for short RAM), magnetic disc or CDs.
In the embodiment such as apparatus and method of the present invention, obviously, each parts or each step reconfigure after can decomposing, combine and/or decomposing.These decomposition and/or reconfigure and should be considered as equivalents of the present invention.Simultaneously, in the above in the description of the specific embodiment of the invention, the feature of describing and/or illustrating for a kind of embodiment can be used in same or similar mode in one or more other embodiment, combined with the feature in other embodiment, or substitute the feature in other embodiment.
Should emphasize, term " comprises/comprises " existence that refers to feature, key element, step or assembly while using herein, but does not get rid of the existence of one or more further feature, key element, step or assembly or add.
Finally it should be noted that: although described above the present invention and advantage thereof in detail, be to be understood that in the situation that do not exceed the spirit and scope of the present invention that limited by appended claim and can carry out various changes, alternative and conversion.And scope of the present invention is not limited only to the specific embodiment of the described process of instructions, equipment, means, method and step.One of ordinary skilled in the art will readily appreciate that from disclosure of the present invention, can use carry out with the essentially identical function of corresponding embodiment described herein or obtain process, equipment, means, method or step result essentially identical with it, that existing and will be developed future according to the present invention.Therefore, appended claim is intended to comprise such process, equipment, means, method or step in their scope.
Claims (10)
1. a dielectric material resistivity measurement device under illumination, is characterized in that, comprising:
Target chamber, for the solar simulator of illumination simulation environment, for the quartz window of printing opacity, for by the evacuated vacuum-pumping system of described target chamber, dielectric material, the temperature control equipment that keeps temperature constant for controlling described dielectric material, worktable, voltage source, give power supply and the electrometer of described temperature control equipment power supply;
Wherein, described quartz window is arranged on the top of described target chamber; Described worktable is arranged on the bottom surface of described target chamber; Described temperature control equipment is positioned on described worktable; Described dielectric material is positioned on described temperature control equipment, described dielectric material upper surface is coated with ring electrode and guard electrode, the lower surface of described dielectric material is coated with voltage pole, described voltage pole is connected with the voltage source that is positioned at described target chamber outside, described guard electrode is connected with the electrometer that is positioned at described target chamber outside, described ring electrode ground connection;
It is outside that described voltage source, power supply, electrometer, solar simulator and vacuum-pumping system lay respectively at described target chamber; One end of described voltage source is connected with the voltage pole of dielectric material, the other end ground connection of described voltage source; Described power supply is connected with described temperature control equipment; One end of described electrometer is connected with the guard electrode of dielectric material, the other end ground connection of described electrometer; Described solar simulator is over against described quartz window and be positioned at the top of described quartz window; Described vacuum-pumping system is close to the outer wall of described target chamber.
2. dielectric material resistivity measurement device under illumination according to claim 1, is characterized in that:
Described ring electrode, guard electrode and/or voltage very adopt the metal electrode of sputtering method plating.
3. dielectric material resistivity measurement device under illumination according to claim 1, is characterized in that:
The model of described electrometer is Keithley6517B.
4. a dielectric material resistivity measurement method under illumination, is characterized in that, uses dielectric material resistivity measurement device under the illumination as described in as arbitrary in claim 1-3; Under described illumination, dielectric material resistivity measurement method comprises:
Dielectric material is positioned on the temperature control equipment that is positioned at worktable top in target chamber, and described dielectric material upper surface is coated with ring electrode and guard electrode, and the lower surface of described dielectric material is coated with voltage pole;
Opening vacuum-pumping system vacuumizes described target chamber;
Open solar simulator illumination simulation environment;
Power-on is given described temperature control equipment power supply, and described temperature control equipment is controlled described dielectric material and kept temperature constant;
Cut-in voltage source applies voltage to the voltage pole of dielectric material;
The leakage current of the guard electrode by electrometer measuring media material;
The leakage current of the guard electrode that the magnitude of voltage applying by voltage source and described electrometer measure, calculates the resistivity of described dielectric material under different light and different temperatures.
5. dielectric material resistivity measurement method under illumination according to claim 4, is characterized in that:
Described ring electrode, guard electrode and/or voltage very adopt the metal electrode of sputtering method plating.
6. dielectric material resistivity measurement method under illumination according to claim 4, is characterized in that, described unlatching vacuum-pumping system vacuumizes described target chamber, comprising:
Open vacuum-pumping system;
Described target chamber is evacuated to vacuum tightness higher than 5.0 * 10
-3the vacuum of Pa.
7. dielectric material resistivity measurement method under illumination according to claim 4, is characterized in that, described unlatching solar simulator illumination simulation environment, comprising:
Open solar simulator;
The intensity of illumination of a solar constant of simulation.
8. dielectric material resistivity measurement method under illumination according to claim 4, is characterized in that, described temperature control equipment is controlled described dielectric material and kept temperature constant, comprising:
Temperature control equipment is the arbitrary temperature value within the scope of 50～150 ℃ by the temperature constant of described dielectric material.
9. dielectric material resistivity measurement method under illumination according to claim 4, is characterized in that, described cut-in voltage source applies voltage to the voltage pole of dielectric material, comprising:
Cut-in voltage source;
Apply the voltage within the scope of 0～1000V to the voltage pole of dielectric material.
10. dielectric material resistivity measurement method under illumination according to claim 4, is characterized in that, the leakage current of the described guard electrode by electrometer measuring media material, comprising:
Adopt the leakage current of the guard electrode of the electrometer measuring media material that model is Keithley6517B.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310722884.7A CN103760422B (en) | 2013-12-24 | 2013-12-24 | Dielectric material resistivity measurement device and method under illumination |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310722884.7A CN103760422B (en) | 2013-12-24 | 2013-12-24 | Dielectric material resistivity measurement device and method under illumination |
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| CN103760422A true CN103760422A (en) | 2014-04-30 |
| CN103760422B CN103760422B (en) | 2017-04-05 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105680799A (en) * | 2014-11-18 | 2016-06-15 | 上海空间电源研究所 | Multifunctional solar cell performance test apparatus |
| CN106405245A (en) * | 2016-11-15 | 2017-02-15 | 武汉科技大学 | Electrodeless resistivity tester temperature regulation and control apparatus |
| CN109188086A (en) * | 2018-09-19 | 2019-01-11 | 许昌学院 | A kind of test method that temperature influences space medium material electric conductivity |
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| US4267506A (en) * | 1979-01-02 | 1981-05-12 | Shiell Thomas J | Collinear four-point probe head and mount for resistivity measurements |
| US20110101986A1 (en) * | 2009-10-29 | 2011-05-05 | Byd Company Limited | Device and method of testing an internal resistance of a battery pack |
| CN102520257A (en) * | 2011-12-07 | 2012-06-27 | 华中科技大学 | Alternating current (AC) impedance spectroscopy automatic testing device of positive temperature coefficient (PTC) thermistor |
| CN103226167A (en) * | 2013-04-24 | 2013-07-31 | 兰州空间技术物理研究所 | Conductivity measurement device and method of dielectric material |
| CN103257279A (en) * | 2013-04-24 | 2013-08-21 | 兰州空间技术物理研究所 | Device and method for testing medium material radiation induction conductivity for satellite |
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2013
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Patent Citations (5)
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| US4267506A (en) * | 1979-01-02 | 1981-05-12 | Shiell Thomas J | Collinear four-point probe head and mount for resistivity measurements |
| US20110101986A1 (en) * | 2009-10-29 | 2011-05-05 | Byd Company Limited | Device and method of testing an internal resistance of a battery pack |
| CN102520257A (en) * | 2011-12-07 | 2012-06-27 | 华中科技大学 | Alternating current (AC) impedance spectroscopy automatic testing device of positive temperature coefficient (PTC) thermistor |
| CN103226167A (en) * | 2013-04-24 | 2013-07-31 | 兰州空间技术物理研究所 | Conductivity measurement device and method of dielectric material |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105680799A (en) * | 2014-11-18 | 2016-06-15 | 上海空间电源研究所 | Multifunctional solar cell performance test apparatus |
| CN105680799B (en) * | 2014-11-18 | 2019-02-05 | 上海空间电源研究所 | A kind of multifunctional solar battery performance test device |
| CN106405245A (en) * | 2016-11-15 | 2017-02-15 | 武汉科技大学 | Electrodeless resistivity tester temperature regulation and control apparatus |
| CN109188086A (en) * | 2018-09-19 | 2019-01-11 | 许昌学院 | A kind of test method that temperature influences space medium material electric conductivity |
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Inventor after: Li Detian Inventor after: Wang Jun Inventor after: Yang Shengsheng Inventor after: Qin Xiaogang Inventor after: Liu Qing Inventor after: Shi Liang Inventor after: Tang Daotan Inventor after: Chen Yifeng Inventor after: Zhao Chengxuan Inventor before: Wang Jun Inventor before: Li Detian Inventor before: Yang Shengsheng Inventor before: Qin Xiaogang Inventor before: Liu Qing Inventor before: Shi Liang Inventor before: Tang Daotan Inventor before: Chen Yifeng Inventor before: Zhao Chengxuan |
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