CN103755382B - A kind of conductor of high-temperature superconductor coat RESbO 3buffer layer and preparation method thereof - Google Patents

A kind of conductor of high-temperature superconductor coat RESbO 3buffer layer and preparation method thereof Download PDF

Info

Publication number
CN103755382B
CN103755382B CN201410016180.2A CN201410016180A CN103755382B CN 103755382 B CN103755382 B CN 103755382B CN 201410016180 A CN201410016180 A CN 201410016180A CN 103755382 B CN103755382 B CN 103755382B
Authority
CN
China
Prior art keywords
resbo
colloid
conductor
buffer layer
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201410016180.2A
Other languages
Chinese (zh)
Other versions
CN103755382A (en
Inventor
张欣
赵勇
程翠华
张勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Southwest Jiaotong University
Original Assignee
Southwest Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Southwest Jiaotong University filed Critical Southwest Jiaotong University
Priority to CN201410016180.2A priority Critical patent/CN103755382B/en
Publication of CN103755382A publication Critical patent/CN103755382A/en
Application granted granted Critical
Publication of CN103755382B publication Critical patent/CN103755382B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

One prepares conductor of high-temperature superconductor coat RESbO 3buffer layer and preparation method thereof, belongs to high temperature superconducting materia preparing technical field.Described buffer layers of high-temperature superconducting coating conductors is by RE 2o 3and Sb 2o 3the RESbO that extension becomes phase thermal treatment to generate 3oxide solid solution, RE is Y(yttrium), Sm(samarium), Dy(dysprosium) or Ho(holmium) in one.It can more than 900 DEG C hydrogen argon reducing gas environment in extension generate, and compact structure, surfacing, can in the preparation process of coating conductor superconducting layer subsequently holding structure stable.The preparation method of described buffer layers of high-temperature superconducting coating conductors adopts the chemical solution deposition using acetate as precursor to be prepared in hydrogen argon reducing atmosphere, possesses simple to operate, with low cost, is applicable to the advantages such as extensive deposition.Mainly for the preparation of the RESbO of conductor of high-temperature superconductor coat 3buffer layer.

Description

A kind of conductor of high-temperature superconductor coat RESbO 3buffer layer and preparation method thereof
Technical field
The invention belongs to high temperature superconducting materia preparing technical field, particularly relate to a kind of buffer layers of high-temperature superconducting coating conductors and technology of preparing thereof.
Background technology
As second-generation high-temperature superconductor, RE, Ba and Cu oxide (REBCO) coating conductor, due to its current capacity excellent under upfield, is gathered around and is had broad application prospects in power system.Such as in multiple superconducting device, there is a lot of application, such as cable, transformer, generator and electric motor.Each developed country is from the technical renovation of national electric power energy and long-term interest, and carry forward vigorously the research of s-generation high-temperature superconductor and practicalization, international competition is more and more fierce.
The feature possessed due to REBCO superconducting layer material self on the one hand will cause conductor of high-temperature superconductor coat all to have substrate, buffer layer (at least one deck) and REBCO superconducting coating three-decker, each developed country input huge fund Developing through two more than ten years has gone out a series of cushioning layer material with practical level.Such as SrTiO 3, La 2zr 2o 7, CeO 2, YSZ, RE 2o 3deng.The consequent will be the monopolization of intellecture property and the restriction of high price.On the other hand, along with biaxial texture method is assisted in employing RABiTS(rolling) prepare reaching its maturity of the Ni base alloy baseband of biaxial texture, become at the buffer layer of the Ni base alloy baseband epitaxy high-quality of RABiTS and follow-up superconducting layer the major technique trend preparing second-generation high-temperature superconductor gradually.But in Ni base alloy substrates during depositing oxide buffer layers, due to the spontaneous non-directional oxidation of Ni base alloy substrates, be easy to cause generating the mixed and disorderly NiO of orientation, and then have a strong impact on the texture growing of follow-up superconducting layer.In order to address this problem, be mostly prepared in reducing atmosphere.
In addition, the technology of the preparation of current conductor of high-temperature superconductor coat, mainly based on the physical method of vacuum technique, comprises pulsed laser deposition (PLD), magnetron sputtering method (MSP), electron-beam evaporation (EBE) etc.The use of traditional physical method based on vacuum technique will cause its preparation cost to remain high, and be difficult to by large-scale application and commercialization.And have with low cost based on the technology of preparing (CSD) of chemical solution method, simple to operate, the unique advantage such as accurate and applicable extensive deposition of Composition Control, will be with a wide range of applications.
Summary of the invention
The object of the present invention is to provide a kind of conductor of high-temperature superconductor coat RESbO 3buffer layer and preparation method thereof.This buffer layer can epitaxy in hydrogen argon reducing gas below 980 DEG C, its compact structure and surfacing.And in the preparation process of the superconducting layer of conductor of high-temperature superconductor coat subsequently holding structure stable.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of conductor of high-temperature superconductor coat RESbO 3buffer layer, it is by RE 2o 3and Sb 2o 3the RESbO that extension becomes phase thermal treatment to generate 3oxide solid solution, RE is Y(yttrium), Sm(samarium), Dy(dysprosium), Ho(holmium) in one.
RESbO 3(RE=Y, Sm, Dy, Ho) buffer layer all possesses cubic structure, and its counterfeit lattice parameter and REBCO superconducting layer and Ni base alloy substrates all have good matching, by RE 2o 3and Sb 2o 3the RESbO that solid solution generates 3(RE=Y, Sm, Dy, Ho) extension will become phase more than 900 DEG C, the extension far above REBCO superconducting layer be become phase temperature (about 800 DEG C), make RESbO 3(RE=Y, Sm, Dy, Ho) buffer layer stablizing by holding structure in the preparation process of the superconducting layer of conductor of high-temperature superconductor coat subsequently.
RESbO of the present invention 3the performance of (RE=Y, Sm, Dy, Ho) buffer layer will have experiment provided by the present invention to be verified.
Another object of the present invention is to provide one to prepare conductor of high-temperature superconductor coat RESbO 3the method of buffer layer thin film.It adopts the chemical solution deposition using acetate as precursor to be prepared in hydrogen argon reducing atmosphere, has simple to operate, with low cost, is applicable to the advantages such as extensive deposition.The steps include:
Prepared by a, anhydrous solution: be dissolved in propionic acid by the acetate of precursor RE and antimony acetate in the ratio of metal cation ratio RE:Sb=1:1, forms anhydrous solution;
Prepared by b, colloid: in the anhydrous solution of a step, add the colloid that polyvinyl butyral acetal forms good film-forming property;
The coating of c, colloid is with dry: b walk obtained colloid and be coated on substrate, oven dry, for subsequent use;
D, thermal decomposition process: the substrate being coated with colloid is placed in sintering oven, and in sintering oven, pass into the H of 5% volume content 2-Ar mixed gas, then makes furnace temperature rise to 440 DEG C ~ 500 DEG C from room temperature with 0.6 DEG C/min, then rises to 570 DEG C ~ 620 DEG C with the speed of 1.4 ~ 2 DEG C/min, and be incubated 0.5 ~ 1 hour;
E, sinter phase into: the substrate after thermal decomposition process is put into sintering oven, in sintering oven, first pass into the H of 5% volume content 2-Ar mixed gas, then rises to 900 DEG C ~ 980 DEG C by furnace temperature with the speed of 25 ~ 100 DEG C/min and is incubated 40 ~ 60 minutes, then allowing furnace temperature Temperature fall to room temperature, obtain conductor of high-temperature superconductor coat RESbO 3buffer layer.
Above-mentioned polyvinyl butyral acetal (PVB) add-on is 2% ~ 4% of colloid total mass.Such ratio can ensure the colloid good film-forming property made.
Above-mentioned substrate is the LaAlO of biaxial texture 3monocrystal chip.
The on-chip concrete practice in above-mentioned c step, colloid being coated in coating conductor is: by colloid drops on substrate, then use sol evenning machine spin coated on substrate.
Temperature time dry in above-mentioned c step is 100 DEG C ~ 200 DEG C, under such temperature conditions, can make the propionic acid in colloid can more, vapor away quickly.
Compared with prior art, the invention has the beneficial effects as follows:
Before sintering, by the temperature-gradient method predecomposition process of selected heat-up rate, can make to sinter the coating formed more smooth, finer and close.Sinter phase time into, in sintering oven, first pass into the H of 5% volume content 2-Ar mixed gas.RESbO can be ensured like this 3good biaxial texture can be formed.The starting raw material that preparation process uses is the comparatively cheap metal acetate of price, reduces cost of manufacture; The film-forming high molecular compound added is cheap, uses extensive, nontoxic polyvinyl butyral acetal (PVB), and its add-on is also few, reduce further cost of manufacture; Only by gained colloid, need be coated on substrate and sinter, manufacture craft is simple, and operation controls easily.
Accompanying drawing explanation
Fig. 1 is the YSbO of embodiment one 3the X ray diffracting spectrum of buffer layer.
Fig. 2 is the YSbO of embodiment one 35000 times of scanning electronic microscope (SEM) photos of buffer layer.
Fig. 3 is the SmSbO of embodiment two 3the X ray diffracting spectrum of buffer layer.
Fig. 4 is the SmSbO of embodiment two 35000 times of scanning electronic microscope (SEM) photos of buffer layer.
Fig. 5 is the DySbO of embodiment three 3the X ray diffracting spectrum of buffer layer.
Fig. 6 is the DySbO of embodiment three 35000 times of scanning electronic microscope (SEM) photos of buffer layer.
Fig. 7 is the HoSbO of embodiment four 3the X ray diffracting spectrum of buffer layer.
Fig. 8 is the HoSbO of embodiment four 35000 times of scanning electronic microscope (SEM) photos of buffer layer.
Fig. 1, the ordinate zou of 3,5,7 is diffracted intensity (Intensity), arbitrary unit (a.u.); X-coordinate is diffraction angle 2Theta, and unit is degree (deg).
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Embodiment one
The invention provides a kind of conductor of high-temperature superconductor coat RESbO 3buffer layer, it is by Y 2o 3and Sb 2o 3the oxide solid solution that extension becomes phase thermal treatment to generate; And one prepares conductor of high-temperature superconductor coat YSbO 3the method of buffer layer thin film, the steps include:
Prepared by a, anhydrous solution: be dissolved in propionic acid by the acetate of precursor Y and Sb in the ratio of metal cation ratio Y:Sb=1:1, forms anhydrous solution.
Prepared by b, colloid: in the anhydrous solution of a step, add polyvinyl butyral acetal (PVB) ultrasonic dissolution, be formed with the colloid of viscosity.The add-on of polyvinyl butyral acetal (PVB) accounts for 2% of colloid total mass.
The coating of c, colloid is with dry: b is walked obtained colloid and be coated on substrate, then dry at 100 DEG C.
D, thermal decomposition process: the substrate being coated with colloid is placed in sintering oven, and in sintering oven, pass into the H of 5% volume content 2-Ar mixed gas, makes furnace temperature rise to 440 DEG C from room temperature with the speed of 0.6 DEG C/min, then rises to 570 DEG C with the speed of 1.4 DEG C/min, and be incubated 0.5 hour.
E, sinter phase into: the substrate after thermal decomposition process is put into sintering oven, in sintering oven, first pass into the H of 5% volume content 2-Ar mixed gas, then furnace temperature is risen to 900 DEG C fast with the speed of 25 DEG C/min and is incubated 40 minutes, then allow stove Temperature fall to room temperature, obtain YSbO 3buffer layers of high-temperature superconducting coating conductors.
According to the YSbO of embodiment one 3the X ray diffracting spectrum of buffer layer, can find out except YSbO 3buffer layer (200) diffraction peak and substrate LaAlO 3diffraction peak outside, without YSbO 3other assorted peaks, suggest YSbO 3there is texture outside very strong face in buffer layer thin film.
According to embodiment one YSbO 35000 times of scanning electronic microscope (SEM) photos of buffer layer, known film sample surfacing, densification, seamless without hole.It can thus be appreciated that this embodiment one has prepared texture well, the YSbO that surface compact is smooth 3buffer layer thin film.
Embodiment two
The invention provides a kind of conductor of high-temperature superconductor coat RESbO 3buffer layer, it is by Sm 2o 3and Sb 2o 3the RESbO that extension becomes phase thermal treatment to generate 3oxide solid solution; And one prepares conductor of high-temperature superconductor coat SmSbO 3the method of buffer layer thin film, the steps include:
Prepared by a, anhydrous solution: be dissolved in propionic acid by the acetate of precursor Sm and Sb in the ratio of metal cation ratio Sm:Sb=1:1, forms anhydrous solution.
Prepared by b, colloid: in the anhydrous solution of a step, add polyvinyl butyral acetal (PVB) ultrasonic dissolution, be formed with the colloid of viscosity.The add-on of polyvinyl butyral acetal (PVB) accounts for 3% of colloid total mass.
The coating of c, colloid is with dry: b is walked obtained colloid and be coated on substrate, then dry at 140 DEG C.
D, thermal decomposition process: the substrate being coated with colloid is placed in sintering oven, and in sintering oven, pass into the H of 5% volume content 2-Ar mixed gas, makes furnace temperature rise to 460 DEG C from room temperature with the speed of 0.6 DEG C/min, then rises to 580 DEG C with the speed of 1.6 DEG C/min, and be incubated 40 minutes.
E, sinter phase into: the substrate after thermal decomposition process is put into sintering oven, in sintering oven, first pass into the H of 5% volume content 2-Ar mixed gas, then furnace temperature is risen to 960 DEG C fast with the speed of 35 DEG C/min and is incubated 50 minutes, then allow stove Temperature fall to room temperature, obtain SmSbO 3buffer layers of high-temperature superconducting coating conductors.
According to the SmSbO of embodiment two 3the X ray diffracting spectrum of buffer layer, can find out except SmSbO 3buffer layer (200) diffraction peak and substrate LaAlO 3diffraction peak outside, without SmSbO 3other assorted peaks, suggest SmSbO 3there is texture outside very strong face in buffer layer thin film.
According to embodiment two SmSbO 35000 times of scanning electronic microscope (SEM) photos of buffer layer.As shown in Figure 2: film sample surfacing, densification, seamless without hole.It can thus be appreciated that this embodiment two has prepared texture well, the SmSbO that surface compact is smooth 3buffer layer thin film.
Embodiment three
The invention provides a kind of conductor of high-temperature superconductor coat RESbO 3buffer layer, it is by Dy 2o 3and Sb 2o 3the DySbO that extension becomes phase thermal treatment to generate 3oxide solid solution; And one prepares conductor of high-temperature superconductor coat DySbO 3the method of buffer layer thin film, the steps include:
Prepared by a, anhydrous solution: be dissolved in propionic acid by the acetate of precursor Dy and Sb in the ratio of metal cation ratio Dy:Sb=1:1, forms anhydrous solution.
Prepared by b, colloid: in the anhydrous solution of a step, add polyvinyl butyral acetal (PVB) ultrasonic dissolution, be formed with the colloid of viscosity.The add-on of polyvinyl butyral acetal (PVB) accounts for 3.2% of colloid total mass.
The coating of c, colloid is with dry: b is walked obtained colloid and be coated on substrate, then dry at 170 DEG C.
D, thermal decomposition process: the substrate being coated with colloid is placed in sintering oven, and in sintering oven, pass into the H of 5% volume content 2-Ar mixed gas, makes furnace temperature rise to 480 DEG C from room temperature with the speed of 0.6 DEG C/min, then rises to 590 DEG C with the speed of 1.8 DEG C/min, and be incubated 50 minutes.
E, sinter phase into: the substrate after thermal decomposition process is put into sintering oven, in sintering oven, first pass into the H of 5% volume content 2-Ar mixed gas, then furnace temperature is risen to 970 DEG C fast with the speed of 50 DEG C/min and is incubated 55 minutes, then allow stove Temperature fall to room temperature, obtain DySbO 3buffer layers of high-temperature superconducting coating conductors.
According to the DySbO of embodiment three 3the X ray diffracting spectrum of buffer layer, can find out except DySbO 3buffer layer (200) diffraction peak and substrate LaAlO 3diffraction peak outside, without DySbO 3other assorted peaks, suggest DySbO 3there is texture outside very strong face in buffer layer thin film.
According to embodiment three DySbO 35000 times of scanning electronic microscope (SEM) photos of buffer layer, known film sample surfacing, densification, seamless without hole.It can thus be appreciated that this embodiment three has prepared texture well, the DySbO that surface compact is smooth 3buffer layer thin film.
Embodiment four
The invention provides a kind of conductor of high-temperature superconductor coat RESbO 3buffer layer, it is by Ho 2o 3and Sb 2o 3the HoSbO that extension becomes phase thermal treatment to generate 3oxide solid solution; And one prepares conductor of high-temperature superconductor coat HoSbO 3the method of buffer layer thin film, the steps include:
Prepared by a, anhydrous solution: be dissolved in propionic acid by the acetate of precursor Ho and Sb in the ratio of metal cation ratio Y:Ho=1:1, forms anhydrous solution.
Prepared by b, colloid: in the anhydrous solution of a step, add polyvinyl butyral acetal (PVB) ultrasonic dissolution, be formed with the colloid of viscosity.The add-on of polyvinyl butyral acetal (PVB) accounts for 4% of colloid total mass.
The coating of c, colloid is with dry: b is walked obtained colloid and be coated on substrate, then dry at 200 DEG C.
D, thermal decomposition process: the substrate being coated with colloid is placed in sintering oven, and in sintering oven, pass into the H of 5% volume content 2-Ar mixed gas, makes furnace temperature rise to 500 DEG C from room temperature with the speed of 0.6 DEG C/min, then rises to 620 DEG C with the speed of 2 DEG C/min, and be incubated 1 hour.
E, sinter phase into: the substrate after thermal decomposition process is put into sintering oven, in sintering oven, first pass into the H of 5% volume content 2-Ar mixed gas, then furnace temperature is risen to 980 DEG C with the speed of 100 DEG C/min and is incubated 60 minutes, then allow stove Temperature fall to room temperature, obtain HoSbO 3buffer layers of high-temperature superconducting coating conductors.
According to the HoSbO of embodiment four 3the X ray diffracting spectrum of buffer layer, can find out except HoSbO 3buffer layer (200) diffraction peak and substrate LaAlO 3diffraction peak outside, without HoSbO 3other assorted peaks, suggest HoSbO 3there is texture outside very strong face in buffer layer thin film.
According to embodiment four HoSbO 35000 times of scanning electronic microscope (SEM) photos of buffer layer, known film sample surfacing, densification, seamless without hole.It can thus be appreciated that this embodiment four has prepared texture well, the HoSbO that surface compact is smooth 3buffer layer thin film.
RESbO of the present invention 3its purity of propionic acid used in the preparation process of (RE=Y, Sm, Dy, Ho) coating conductor buffer layer reaches more than 99.5%, also namely uses chemical pure propionic acid.The acetate of the RE used in its preparation process, Sb is also analytical pure.When adding propionic acid toward all precursors, precursor can fully dissolve, and can be formed with the colloid of viscosity; When usual precursor total amount is 1 mole, the volume of organic solvent is 0.5-3 liter.Mixed gas is high-purity argon gas and high-purity hydrogen mixing, and namely purity is preferably 99.99%, and the performance of finished product can be guaranteed; Otherwise the performance of finished product will reduce.

Claims (5)

1. a conductor of high-temperature superconductor coat RESbO 3buffer layer, is characterized in that: it is by RE 2o 3and Sb 2o 3the RESbO that extension becomes phase thermal treatment to generate 3oxide solid solution; Wherein RE is the one in Y, Sm, Dy or Ho.
2. a conductor of high-temperature superconductor coat RESbO as claimed in claim 1 3the preparation method of buffer layer, is made up of following steps:
Prepared by a, anhydrous solution: be dissolved in propionic acid by the acetate of precursor RE and antimony acetate in the ratio of metal cation ratio RE:Sb=1:1, forms anhydrous solution;
Prepared by b, colloid: in the anhydrous solution of a step, add the colloid that polyvinyl butyral acetal forms good film-forming property;
The coating of c, colloid is with dry: b walk obtained colloid and be coated on substrate, oven dry, for subsequent use;
D, thermal decomposition process: the substrate being coated with colloid is placed in sintering oven, and in sintering oven, pass into the H of 5% volume content 2-Ar mixed gas, then makes furnace temperature rise to 440 DEG C ~ 500 DEG C from room temperature with 0.6 DEG C/min, then rises to 570 DEG C ~ 620 DEG C with the speed of 1.4 ~ 2 DEG C/min, and be incubated 0.5 ~ 1 hour;
E, sinter phase into: the substrate after thermal decomposition process is put into sintering oven, in sintering oven, first pass into the H of 5% volume content 2-Ar mixed gas, then rises to 900 DEG C ~ 980 DEG C by furnace temperature with the speed of 25 ~ 100 DEG C/min and is incubated 40 ~ 60 minutes, then allowing furnace temperature Temperature fall to room temperature, obtain conductor of high-temperature superconductor coat RESbO 3buffer layer.
3. conductor of high-temperature superconductor coat RESbO according to claim 2 3the preparation method of buffer layer, is characterized in that: described polyvinyl butyral acetal add-on is 2% ~ 4% of colloid total mass.
4. conductor of high-temperature superconductor coat RESbO according to claim 2 3the preparation method of buffer layer, is characterized in that: in described c step, colloid being coated in the on-chip concrete practice is: by colloid drops on substrate, rotate, colloid is evenly coated on substrate with sol evenning machine.
5. conductor of high-temperature superconductor coat RESbO according to claim 2 3the preparation method of buffer layer, is characterized in that: temperature when drying in described c step is 100 DEG C ~ 200 DEG C.
CN201410016180.2A 2014-01-14 2014-01-14 A kind of conductor of high-temperature superconductor coat RESbO 3buffer layer and preparation method thereof Expired - Fee Related CN103755382B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410016180.2A CN103755382B (en) 2014-01-14 2014-01-14 A kind of conductor of high-temperature superconductor coat RESbO 3buffer layer and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410016180.2A CN103755382B (en) 2014-01-14 2014-01-14 A kind of conductor of high-temperature superconductor coat RESbO 3buffer layer and preparation method thereof

Publications (2)

Publication Number Publication Date
CN103755382A CN103755382A (en) 2014-04-30
CN103755382B true CN103755382B (en) 2015-12-30

Family

ID=50522747

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410016180.2A Expired - Fee Related CN103755382B (en) 2014-01-14 2014-01-14 A kind of conductor of high-temperature superconductor coat RESbO 3buffer layer and preparation method thereof

Country Status (1)

Country Link
CN (1) CN103755382B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1862712A (en) * 2006-04-27 2006-11-15 西南交通大学 Buffer layer of high temp superconductive coated conductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1862712A (en) * 2006-04-27 2006-11-15 西南交通大学 Buffer layer of high temp superconductive coated conductor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
涂层导体 DyBiO3(DBO)缓冲层的低温制备;孙瑞萍等;《稀有金属材料与工程》;20090531;第38卷(第5期);第901-904页 *

Also Published As

Publication number Publication date
CN103755382A (en) 2014-04-30

Similar Documents

Publication Publication Date Title
CN102509763B (en) Method for preparing high-temperature superconducting coating conductor LaSrMnO3 buffering layer film
CN102222761B (en) Preparation method of high temperature superconductive coating conductor La2Zr2O7 buffer layer film
CN100565953C (en) A kind of method of polymer-assistant depositing high temperature superconducting coating conductor superconducting layer
CN102142300B (en) Preparation method of second-phase nanoparticle doped YBCO (yttrium barium copper oxide) film
CN102731083B (en) Method for preparing yttrium-barium-copper-oxygen high-temperature superconducting film
CN100415680C (en) Depositing process in no-fluorine chemical solvent for preparing high temperautre superconductive Y-Ba-Cu-O coating conductor
CN103833416B (en) A kind of chemical solution deposition preparation method of the sour lanthanum conductive film of nickel
CN104599783A (en) Bi2223 oxide thin film and preparation method thereof
CN102912332B (en) Method for preparing RexCe1-xOy/M2Zr2O7 double-layer buffer layer by chemical solution deposition
CN104060241B (en) Liquid-phase preparation method of high-oriented vanadium dioxide film
CN101587763B (en) Method for preparing buffer layers of high-temperature superconducting coating conductors
CN101281806B (en) Method for preparing high temperature superconduction coating conductor buffer layer using polymer auxiliary deposition
CN103755382B (en) A kind of conductor of high-temperature superconductor coat RESbO 3buffer layer and preparation method thereof
CN103864461A (en) Method for preparing REBCO superconducting thin film
Amoresi et al. Role of morphological characteristics on the conductive behavior of LaNiO3 thin films
CN103515026B (en) One prepares conductor of high-temperature superconductor coat La 0.7sr 0.3mnO 3the method of buffer layer thin film
CN102509764A (en) Method for preparing lanthanum-zirconium oxide La2Zr2O7 buffer layer thin film of high-temperature superconducting coating conductor on biaxially textured NiW alloy substrate
CN102723141B (en) Gd1-xCaxBiO3 buffering layer of high temperature superconducting coated conductor and preparation method thereof
CN102176349B (en) Method for preparing high-temperature superconductive coated conductor SrZrO3 buffer film
CN104538113B (en) Superconducting coating Y2Ce2O7The preparation method of transition layer film
CN103497000B (en) Preparation method of La2Zr2O7 buffer layer film
CN102241526B (en) Preparation method of high temperature superconductive coating conductor buffer layer
CN102701729A (en) Sm1-xCaxBiO3 buffering layer of high-temperature superconductivity coated conductor and preparation method thereof
CN102701728B (en) Gd[1-x]Pb[x]BiO3 buffer layer for high-temperature superconducting coated conductor and preparation method thereof
CN102157675B (en) Method for preparing thin film of high-temperature superconductive coating conductor BaZrO3 buffer layer

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20151230

Termination date: 20200114

CF01 Termination of patent right due to non-payment of annual fee