CN103746679B - The power-failure memory method and powder down memory circuit of powder down memory circuit - Google Patents
The power-failure memory method and powder down memory circuit of powder down memory circuit Download PDFInfo
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- CN103746679B CN103746679B CN201310747197.0A CN201310747197A CN103746679B CN 103746679 B CN103746679 B CN 103746679B CN 201310747197 A CN201310747197 A CN 201310747197A CN 103746679 B CN103746679 B CN 103746679B
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Abstract
The present invention discloses a kind of power-failure memory method of powder down memory circuit, including：By setting power supply capacitor and voltage detecting electric capacity；In powder down memory circuit power down, the voltage of IC chip detection voltage detection electric capacity is switched over in low-power consumption mode and normal mode.Because the inventive method is powered by power supply capacitor to IC chip, and IC chip is extended the discharge time of power supply capacitor to switch between low-power consumption mode and normal mode to the voltage of voltage detecting capacitances to supply power and detection voltage detection electric capacity, such that it is able to extend the time that IC chip preserves running parameter in powder down memory circuit power down.
Description
Technical field
The present invention relates to field of circuit technology, and in particular to a kind of power-failure memory method of powder down memory circuit and power down are remembered
Recall circuit.
Background technology
Household appliances are divided into charged pool and without two kinds of battery, and the effect of charged pool is primarily to household appliances are in power down
When to chip provide energy with memory work parameter, the household appliances without charged pool then cannot for a long time preserve running parameter,
The remaining electric quantity of electric capacity can only be relied on to maintain the operation of chip, however its hold time it is very short, but also exist data with
The risk that machine is lost.
The content of the invention
It is an object of the invention to provide the power-failure memory method and powder down memory circuit of a kind of powder down memory circuit, it is intended to
Extension powder down memory circuit preserves the time of running parameter in power down.
In order to realize the purpose of the present invention, the present invention provides a kind of power-failure memory method of powder down memory circuit, including：
S1, sets power supply capacitor, for being powered to IC chip in powder down memory circuit power down；
S2, sets voltage detecting electric capacity, for carrying out voltage detecting by IC chip in powder down memory circuit power down；
S3, in powder down memory circuit power down, IC chip detection voltage detection electric capacity voltage and with setting low-power consumption
Voltage is compared, and IC chip switches to low-power consumption mould when the voltage for detecting voltage detecting electric capacity is less than low power consumption voltage
Formula, then IC chip detection voltage detection electric capacity voltage and with setting activation voltage be compared；
S4, IC chip switches to normal mode when the voltage of voltage detecting electric capacity is detected higher than activation voltage, and holds
Row step S3, otherwise still makes low-power consumption mode at IC chip until IC chip resets.
Accordingly, the present invention provides a kind of powder down memory circuit, including：IC chip and the resistance and electricity of IC chip connection
The resistance voltage detecting electric capacity for concatenating and being grounded, the hold-off diode for being connected in parallel on resistance two ends and the power supply electricity being connected with IC chip
Hold, the power supply capacitor is powered in powder down memory circuit power down to IC chip, and the IC chip is in powder down memory circuit power down
When detection voltage detect electric capacity voltage, and IC chip voltage detecting electric capacity voltage be less than low power consumption voltage when switch to it is low
Power consumption mode, IC chip is switched to when the supply voltage of voltage detecting electric capacity after switching to low-power consumption mode is higher than activation voltage
Normal mode.
Preferably, the resistance connects the AN pins of IC chip, the VDD pins of the power supply capacitor connection IC chip and
GND pin.
Preferably, the voltage detecting electric capacity is ceramic disc capacitor, and the power supply capacitor is electrochemical capacitor.
Accordingly, the present invention also provides a kind of powder down memory circuit, including：IC chip and IC chip connection resistance and
Voltage detecting electric capacity that resistance is concatenated and is grounded, the hold-off diode being connected between voltage detecting electric capacity and voltage source VDD with
And the power supply capacitor being connected with IC chip, the power supply capacitor powers in powder down memory circuit power down to IC chip, the IC
Chip detection voltage in powder down memory circuit power down detects the voltage of electric capacity, and IC chip is low in the voltage of voltage detecting electric capacity
Low-power consumption mode, the power supply electricity of IC chip voltage detecting electric capacity after low-power consumption mode is switched to are switched to when low power consumption voltage
Normal mode is switched to when pressure is higher than activation voltage.
Because the inventive method and powder down memory circuit are in power down, powered to IC chip by power supply capacitor, and make IC
The voltage of chip detection voltage detecting electric capacity extends putting for power supply capacitor to switch between low-power consumption mode and normal mode
The electric time, such that it is able to extend the time that IC chip preserves running parameter in powder down memory circuit power down.
Brief description of the drawings
Fig. 1 is the flow chart of the power-failure memory method of powder down memory circuit of the present invention；
Fig. 2 is the circuit diagram of the first embodiment using the powder down memory circuit of the inventive method；
Fig. 3 is powder down memory circuit fundamental diagram shown in Fig. 2；
Fig. 4 is the circuit diagram of the second embodiment using the powder down memory circuit of the inventive method.
The realization of the object of the invention, functional characteristics and advantage will be described further referring to the drawings in conjunction with the embodiments.
Specific embodiment
It should be appreciated that specific embodiment described herein is only used to explain the present invention, it is not intended to limit the present invention.
The present invention provides a kind of power-failure memory method of powder down memory circuit, Fig. 1 is referred to, there is disclosed power down of the present invention
One embodiment of the power-failure memory method of memory circuit, in the present embodiment, the power-failure memory method of powder down memory circuit includes：
S1, sets power supply capacitor, for being powered to IC chip in powder down memory circuit power down；
S2, sets voltage detecting electric capacity, for carrying out voltage detecting by IC chip in powder down memory circuit power down；
S3, in powder down memory circuit power down, IC chip detection voltage detection electric capacity voltage and with setting low-power consumption
Voltage is compared, and IC chip switches to low-power consumption mould when the voltage for detecting voltage detecting electric capacity is less than low power consumption voltage
Formula, then IC chip detection voltage detection electric capacity voltage and with setting activation voltage be compared；
S4, IC chip switches to normal mode when the voltage of voltage detecting electric capacity is detected higher than activation voltage, and holds
Row step S3, otherwise still makes low-power consumption mode at IC chip until IC chip resets.
Because the inventive method is powered by power supply capacitor to IC chip, and IC chip detection voltage is set to detect the electricity of electric capacity
Press to switch between low-power consumption mode and normal mode to extend the discharge time of power supply capacitor, such that it is able in power-failure memory
Extend the time that IC chip preserves running parameter during circuit power down.
To realize the inventive method, the present invention also provides a kind of powder down memory circuit, Fig. 2 is referred to, there is disclosed this hair
The first embodiment of bright powder down memory circuit, in the present embodiment, powder down memory circuit includes IC chip 110 and IC chip 110
Voltage detecting electric capacity 130 that the resistance 120 of connection is concatenated and be grounded with resistance 120, the cut-off two for being connected in parallel on the two ends of resistance 120
Pole pipe 140 and the power supply capacitor 150 being connected with IC chip 110.The resistance 120 connects the AN pins of IC chip 110.It is described
Voltage detecting electric capacity 130 is ceramic disc capacitor, and its capacity is small, typically pF grades, electric discharge it is fast.The power supply capacitor 150 connects IC cores
The VDD pins and GND pin of piece 110, the power supply capacitor 150 is electrochemical capacitor, and its capacity is big, typically uF grade, electric discharge slowly.
Fig. 3 is referred to, the operation principle of the present embodiment powder down memory circuit is as follows：
When powder down memory circuit is connected voltage source VDD and worked, voltage source VDD powers to power supply capacitor 150, IC chip
110 AN ports power to voltage detecting electric capacity 130；In powder down memory circuit power down, power supply capacitor 150 is to IC chip 110
Power supply, so that IC chip 110 preserves running parameter；The voltage of the AN Port detecting voltage detectings electric capacity 130 of IC chip 110 simultaneously will
It is compared with the low power consumption voltage of setting, and IC chip 110 is less than low-power consumption in the voltage for detecting voltage detecting electric capacity 130
Low-power consumption mode is switched to during voltage；Into after low-power consumption mode, the electric current of the consumption of IC chip 110 is reduced rapidly, power supply capacitor
150 discharge time extension；Then, the voltage of the detection voltage of IC chip 110 detection electric capacity 130 and by the activation electricity of itself and setting
Pressure is compared, and IC chip 110 switches to normal again when the voltage of voltage detecting electric capacity 130 is detected more than activation voltage
Pattern, now IC chip 110 be judged to be equal to the pattern being connected with voltage source VDD, IC chip 110 is to voltage detecting electric capacity
130 and power supply capacitor 150 charged, so repeatedly；If when IC chip 110 switches to normal mode from low-power consumption mode,
When the voltage that IC chip 110 detects voltage detecting electric capacity 130 is not higher than activation voltage, then IC chip 110 is still in low-power consumption
Pattern is until when the supply voltage of voltage detecting electric capacity 130 is less than resetting voltage, IC chip 110 is carried out because supply voltage is too low
Reset.
Because the present embodiment powder down memory circuit is in power down, the electricity of electric capacity 130 is detected by the detection voltage of IC chip 110
Pressure, and switched to extend the discharge time of power supply capacitor 150 between low-power consumption mode and normal mode by IC chip 110,
Such that it is able to extend the time that powder down memory circuit preserves running parameter.
Fig. 4 is referred to, there is disclosed the second embodiment of the powder down memory circuit for realizing the inventive method, in the present embodiment
In, powder down memory circuit includes the electricity that the resistance 220 that IC chip 210 is connected with IC chip 210 is concatenated and be grounded with resistance 220
Pressure detection electric capacity 230, the hold-off diode 240 being connected between voltage detecting electric capacity 230 and voltage source VDD and and IC chip
The power supply capacitor 250 of 210 connections.The resistance 220 connects the AN pins of IC chip 210.The power supply capacitor 250 connects IC cores
The VDD pins and GND pin of piece 210.
The operation principle of the present embodiment powder down memory circuit is similar to the operation principle of first embodiment powder down memory circuit,
Difference is：When powder down memory circuit is connected voltage source VDD and worked, given by hold-off diode 240 by voltage source VDD
Voltage detecting electric capacity 230 charges, and in powder down memory circuit power down, the voltage of the detection voltage of IC chip 210 detection electric capacity 230 is simultaneously
It is compared with the low power consumption voltage of setting, now hold-off diode 240 ends to prevent voltage detecting electric capacity 230 to electricity
Potential source VDD powers.
Because the present embodiment powder down memory circuit is in power down, the electricity of electric capacity 230 is detected by the detection voltage of IC chip 210
Pressure, and switched to extend the discharge time of power supply capacitor 250 between low-power consumption mode and normal mode by IC chip 210,
Such that it is able to extend the time that powder down memory circuit preserves running parameter.
The preferred embodiments of the present invention are these are only, the scope of the claims of the invention is not thereby limited, it is every to utilize this hair
Equivalent structure or equivalent flow conversion that bright specification and accompanying drawing content are made, or directly or indirectly it is used in other related skills
Art field, is included within the scope of the present invention.
Claims (7)
1. a kind of power-failure memory method of powder down memory circuit, it is characterised in that including：
S1, sets power supply capacitor, for being powered to IC chip in powder down memory circuit power down；
S2, sets voltage detecting electric capacity, for carrying out voltage detecting by IC chip in powder down memory circuit power down；
S3, in powder down memory circuit power down, IC chip detection voltage detection electric capacity voltage and with setting low power consumption voltage
It is compared, IC chip switches to low-power consumption mode when the voltage for detecting voltage detecting electric capacity is less than low power consumption voltage, so
IC chip detection voltage detects the voltage of electric capacity and is compared with the activation voltage of setting afterwards；
S4, IC chip switches to normal mode when the voltage of voltage detecting electric capacity is detected higher than activation voltage, and performs step
Rapid S3, otherwise still makes low-power consumption mode at IC chip until IC chip resets.
2. a kind of powder down memory circuit, it is characterised in that including：The resistance that IC chip is connected with IC chip is concatenated simultaneously with resistance
The voltage detecting electric capacity of ground connection, the hold-off diode for being connected in parallel on resistance two ends and the power supply capacitor being connected with IC chip, it is described
Power supply capacitor is powered in powder down memory circuit power down to IC chip, and the IC chip detects electricity in powder down memory circuit power down
The voltage of pressure detection electric capacity, and IC chip switches to low-power consumption mould when the voltage of voltage detecting electric capacity is less than low power consumption voltage
Formula, IC chip switches to normal mode when the supply voltage of voltage detecting electric capacity after switching to low-power consumption mode is higher than activation voltage
Formula.
3. powder down memory circuit as claimed in claim 2, it is characterised in that the resistance connects the AN pins of IC chip, institute
State VDD pins and GND pin that power supply capacitor connects IC chip.
4. powder down memory circuit as claimed in claim 2, it is characterised in that the voltage detecting electric capacity is ceramic disc capacitor, institute
Power supply capacitor is stated for electrochemical capacitor.
5. a kind of powder down memory circuit, it is characterised in that including：The resistance that IC chip is connected with IC chip is concatenated simultaneously with resistance
The voltage detecting electric capacity of ground connection, the hold-off diode being connected between voltage detecting electric capacity and voltage source VDD and and IC chip
The power supply capacitor of connection, the power supply capacitor is powered in powder down memory circuit power down to IC chip, and the IC chip is in power down
Detection voltage detects the voltage of electric capacity during memory circuit power down, and IC chip is electric less than low-power consumption in the voltage of voltage detecting electric capacity
Low-power consumption mode is switched to during pressure, the supply voltage of IC chip voltage detecting electric capacity after low-power consumption mode is switched to is higher than activation
Normal mode is switched to during voltage.
6. powder down memory circuit as claimed in claim 5, it is characterised in that the resistance connects the AN pins of IC chip, institute
State VDD pins and GND pin that power supply capacitor connects IC chip.
7. powder down memory circuit as claimed in claim 5, it is characterised in that the voltage detecting electric capacity is ceramic disc capacitor, institute
Power supply capacitor is stated for electrochemical capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310747197.0A CN103746679B (en) | 2013-12-30 | 2013-12-30 | The power-failure memory method and powder down memory circuit of powder down memory circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310747197.0A CN103746679B (en) | 2013-12-30 | 2013-12-30 | The power-failure memory method and powder down memory circuit of powder down memory circuit |
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| CN103746679A CN103746679A (en) | 2014-04-23 |
| CN103746679B true CN103746679B (en) | 2017-06-30 |
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| CN201310747197.0A Active CN103746679B (en) | 2013-12-30 | 2013-12-30 | The power-failure memory method and powder down memory circuit of powder down memory circuit |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105786638A (en) * | 2016-03-22 | 2016-07-20 | 江苏友奥电器有限公司 | Electric control board with power failure memory function |
| CN106354075B (en) * | 2016-11-25 | 2020-01-21 | 北京意同创科技有限公司 | Remote controller control circuit with backlight screen |
| CN107767489A (en) * | 2017-09-13 | 2018-03-06 | 陕西千山航空电子有限责任公司 | A kind of power supply module and power down control method for protecting logger |
| CN109375112A (en) * | 2018-08-16 | 2019-02-22 | 江苏玖宇实业有限公司 | A kind of accumulator capacity detection power-failure memory method |
| CN112649724A (en) * | 2019-10-11 | 2021-04-13 | 珠海格力电器股份有限公司 | Power failure detection circuit and method and MCU chip |
| CN112021948A (en) * | 2020-09-08 | 2020-12-04 | 广州惠嘉福实业有限公司 | Electric cooker application method |
Citations (4)
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|---|---|---|---|---|
| CN101661320A (en) * | 2009-09-25 | 2010-03-03 | 宇龙计算机通信科技(深圳)有限公司 | Method for power-fail restarting |
| CN102289275A (en) * | 2011-07-05 | 2011-12-21 | 创新科存储技术（深圳）有限公司 | Internal memory power supply circuit |
| CN102883418A (en) * | 2012-09-12 | 2013-01-16 | 上海大学 | Wireless sensor network system and gateway power failure abnormity processing method thereof |
| CN202772858U (en) * | 2012-07-02 | 2013-03-06 | 九阳股份有限公司 | Soyabean milk machine with power cut memory circuit |
-
2013
- 2013-12-30 CN CN201310747197.0A patent/CN103746679B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661320A (en) * | 2009-09-25 | 2010-03-03 | 宇龙计算机通信科技(深圳)有限公司 | Method for power-fail restarting |
| CN102289275A (en) * | 2011-07-05 | 2011-12-21 | 创新科存储技术（深圳）有限公司 | Internal memory power supply circuit |
| CN202772858U (en) * | 2012-07-02 | 2013-03-06 | 九阳股份有限公司 | Soyabean milk machine with power cut memory circuit |
| CN102883418A (en) * | 2012-09-12 | 2013-01-16 | 上海大学 | Wireless sensor network system and gateway power failure abnormity processing method thereof |
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