CN103741122A - Chemical plating method for preparing smooth and sharp AFM-TERS (Atomic Force Microscopy-Tip-Enhanced Raman Spectroscopy) needle point - Google Patents
Chemical plating method for preparing smooth and sharp AFM-TERS (Atomic Force Microscopy-Tip-Enhanced Raman Spectroscopy) needle point Download PDFInfo
- Publication number
- CN103741122A CN103741122A CN201410024753.6A CN201410024753A CN103741122A CN 103741122 A CN103741122 A CN 103741122A CN 201410024753 A CN201410024753 A CN 201410024753A CN 103741122 A CN103741122 A CN 103741122A
- Authority
- CN
- China
- Prior art keywords
- needle point
- afm
- ters
- chemical plating
- pointed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The invention relates to a method for chemically plating a smooth and thin-layer metal film layer on an atomic force microscopy (AFM) needle point, which has the advantages of simplicity in operation, rapidness, low cost, high repeatability and the like. The method takes the AFM needle point which has a clean surface and has a buffering layer as a chemical plating substrate; functionalized molecules and nano particles are firstly modified and then a smooth metal thin layer can be plated by immersing into a suitable chemical plating solution for tens of seconds. The curvature radius of the needle point can be better than 24nmand has the tip-enhanced Raman activity; the method can be directly used for testing tip-enhanced Raman spectroscopy (TERS).
Description
Technical field
The present invention relates to a kind of method at atomic force microscope (AFM) Tip chemistry light-plated cunning, sheet metal rete.Be particularly related to a kind of afm tip using surface cleaning grown buffer layer as electroless plating substrate, first modify upper functionalized molecule and nanoparticle, then in suitable chemical plating solution, soak tens of methods just can at its plated surface Smooth second with the thin metal layer of TERS activity.
Background technology
Tip-Enhanced Raman Spectroscopy (Tip-Enhanced Raman Spectroscopy, TERS) technology is the combination of scanning probe microscopy (Scanning Probe Microscopy, SPM) and Raman spectroscopy.The needle point that is tens nanometers by radius-of-curvature by SPM Controlling System is controlled at the distance very near with sample (as 1nm).When incident light with suitable wavelength and polarized irradiation when needle point is most advanced and sophisticated, at surface plasma body resonant vibration (C.F.Bohren and D.R.Huffman, Absorptionand scattering of light by small particles.Wiley2008.), lightning rod effect (L.Novotny, R.X.Bian and X.S.Xie, Theory of nanometric optical tweezers.Phys.Rev.Lett.1997, 79, 645.) etc. under physical mechanism acting in conjunction, in needle point and sample gap, inspire the plasma body of localization, strengthened the electromagnetic field in this region, those substrates under needle point or the Raman signal of suprabasil absorption molecule are enhanced.
By the combination of SPM and Raman, TERS can obtain surface topography information and the Raman spectral information of needle point below sample simultaneously, and the realization of the two function all depends on the special physics and chemistry character of needle point.Therefore, for TERS needle point, there is following particular requirement:
1. the restriction of pair needle point material.The material of needle point must be gold and silver, copper or their coating, to can produce strong surface plasma body resonant vibration in visible region.
2. the tip of needle point must be sharp-pointed.The radius-of-curvature of needle point should be less than 40nm, to produce suitable enhancing and higher TERS and SPM spatial resolution.
3. needle point tip is smooth as far as possible.Coarse needle surface has surface reinforced Raman active, and when impurity species is adsorbed onto needle surface, the background producing can cause interference to TERS signal.
The SPM that is usually used in building TERS instrument has three kinds: scanning tunnel microscope (Scanning Tunneling Microscopy, STM), scanning shear force microscope (Shear Force Microscopy, SFM) and atomic force microscope (Atomic Force Microscopy, AFM).And AFM is owing to being applicable to all samples research and simple operation and other advantages, the TERS technology of it and Raman combination is the powerful tool of the materials such as research cell, polymkeric substance and Graphene.But the preparation with the afm tip of TERS activity is an important difficult point of this technology of puzzlement.
Gold and silver, copper etc. is owing to having higher Raman enhanced activity, the person's that enjoys Raman study favor.Mainly contain at present three kinds of methods for the preparation of AFM-TERS needle point: vacuum evaporation (B.-S.Yeo, J.Stadler, T.Schmid, R.Zenobi and W.Zhang, Tip-enhanced Raman Spectroscopy – Its status, challenges and future directions.Chem.Phys.Lett.2009, 472, 1-13.), galvanic cell reaction (P.R.Brejna and P.R.Griffiths, Electroless Deposition of Silver Onto Silicon as a Method of Preparation of Reproducible Surface-Enhanced Raman Spectroscopy Substrates and Tip-Enhanced Raman Spectroscopy Tips.Appl.Spectrosc.2010, 64, 493-499.) and silver mirror reaction (Y.Saito, T.Murakami, Y.Inouye and S.Kawata, Fabrication of silver probes for localized plasmon excitation in near-field Raman spectroscopy.Chem.Lett.2005, 34, 920-921.).In vacuum evaporation technology, the many factors such as vacuum tightness, sedimentation rate and temperature all can affect pattern and the quality of depositing metal layers.Even if but in best TERS study group, be also difficult to control preferably each factor the coarse and poor reproducibility of the TERS needle surface that obtains.Although adopt hydrofluoric acid can obtain quickly silvering in conjunction with the initial point pond reaction method of Silver Nitrate, due to the feature of galvanic cell reaction itself, cannot be silver-colored on all silicon faces all deposit, therefore the needle surface obtaining is also very coarse.A kind of last method that adopts silver mirror reaction, because its nucleation rate is slow, low nucleation density makes final coating coarse.Therefore, smooth gold-plated or the silver-plated or copper facing needle point of high reproduction ground preparation is a difficult point of the urgent solution of current AFM-TERS technology.In addition, (the A.Taguchi of Kawata group, N.Hayazawa, Y.Saito, H.Ishitobi, A.Tarun and S.Kawata, Controlling the plasmon resonance wavelength in metal-coated probe using refractive index modification.Opt.Express 2009, 17, 6509-6518.) thickness by changing silicon needle surface silicon dioxide layer proposed regulate the position of the plasma resonance wavelength (PRW) of gained AFM-TERS needle point in 09 year, thereby the selected system of Matching Experiment and optical maser wavelength better.So the thin-layer metal membrane that how to deposit Smooth on the afm tip with buffer insulation layer surfaces such as silicon dioxide layers is another difficult point of AFM-TERS technology as TERS needle point.
Summary of the invention
The object of this invention is to provide a kind of simple to operate, cost is low, the method for favorable reproducibility is at smooth, the fine and close metallic film of commercial afm tip surface chemical plating, makes it have strong TERS enhanced activity.
The technical solution used in the present invention is:
(1) pre-treatment of afm tip
To afm tip surface, RCA is clean, to remove surperficial impurity and organism, and then growth or deposition buffer layer.
(2) functionalisation of surfaces of afm tip and the absorption of nucleus
Afm tip after pre-treatment is carried out to functionalisation of surfaces, and unimolecular layer in modification, increases with this bonding force for the treatment of between metal refining and needle point.Last adsorption of nanoparticles, as nucleus, is carried out the reduction of catalytic metal at needle surface with this.
(3) AFM silicon Tip chemistry plating
Select suitable chemical plating solution and plating condition to carry out electroless deposition, the smooth thin metal layer of growing to the needle point of absorption nucleus.
In preferred embodiment, also comprise step (four) needle point TERS activity characterization: directly the molecule that is adsorbed on golden monocrystalline (111) surface is carried out to Tip-Enhanced Raman Spectroscopy detection.
Described afm tip can be silicon needle point or silicon nitride needle point.
Described buffer layer is preferably at least one in silicon-dioxide or aluminum oxide.
Described functionalized molecule is preferably at least one in hydrosulphonyl silane or aminosilane.
Described nanoparticle is preferably at least one in gold and silver, copper, platinum, Pd nano particle.
The particle diameter of described nanoparticle is preferably 1～10nm.
Chemical plating metal is preferably gold and silver or copper.
The described electroless plating time is preferably 5～50s.
Metal coating surface on described needle point is smooth.
Described AFM-TERS needle point is sharp-pointed, and its radius-of-curvature is preferably better than 24nm.
Described AFM-TERS needle point has TERS enhanced activity.
The present invention adopts the method for electroless plating can be in the deposition of the enterprising row metal of any substrate surface (insulating material, semi-conductor and electro-conductive material), the metallic diaphragm that simultaneously prepared by the method, there is preparation cost low, the feature such as rete is smooth, sample circulation ratio is high and environmentally friendly.By changing the thickness of silicon needle surface silicon dioxide layer, regulate the position of the plasma resonance wavelength of gained AFM-TERS needle point; By functionalized molecule, modify, the upper intensive golden nanometer particle of absorption, the density that improves core with this, promotes the generation of smooth plating layer; By accurate control depositing time, can obtain different thicknesses of layers.Therefore, adopt the method for electroless plating commercial afm tip to be carried out to the deposition of metal, by controlling thickness, grain density and the depositing time of buffer layer, can obtain smooth TERS needle point of different nature, and the feature such as it is high to have circulation ratio, and preparation cost is low.
Compared with prior art, the present invention has following outstanding advantage and technique effect:
(1) electroless plating method of the present invention is prepared AFM-TERS needle point, is applicable to various needle point body materials.
(2) electroless plating method of the present invention is prepared AFM-TERS needle point, compares with existing other preparation methods, and the smooth surface of gained needle point, has reduced the background interference of needle point.
(3) electroless plating method of the present invention is prepared AFM-TERS needle point, can regulate and control by the time of accurate regulation and control electroless plating the radius-of-curvature of needle point, and circulation ratio is high.
(4) electroless plating method of the present invention is prepared AFM-TERS needle point, has advantages of that cost is low, simple to operate, has solved a difficult point in puzzlement AFM-TERS field.
Accompanying drawing explanation
Fig. 1 is experiment flow schematic diagram prepared by smooth sharp-pointed AFM-TERS needle point.
Fig. 2 is the scanning electron microscope diagram (SEM) of commercialization AFM silicon needle point and silver-plated AFM silicon needle point.
Fig. 3 is inserting needle and moves back the TERS spectrogram under batten part.
Embodiment
The invention will be further described in connection with accompanying drawing for following examples.
The preparation of the smooth sharp-pointed AFM metal needle point of a kind of electroless plating:
Fig. 1 is experiment flow schematic diagram prepared by smooth sharp-pointed AFM-TERS needle point
Take preparation, there is smooth sharp-pointed AFM acupuncture needle point as example, according to following procedure of processing, process in use:
(1) pre-treatment of AFM silicon needle point
(1) AFM silicon needle point is soaked in respectively to 10min in acetone and ethanolic soln, to remove the organic pollutant of silicon face, then uses ultrapure water soaking and washing 3min;
(2) needle point after cleaning is soaked in to 10min in the ammoniacal liquor-hydrogen peroxide solution (ammoniacal liquor: hydrogen peroxide: water=1:1:4) of 80 ℃, after taking-up, with ultrapure water, rinses, nitrogen dries up.
(3) the AFM silicon needle point after cleaning is dipped in to 2min in HF damping fluid, to remove surperficial SiO
2zone of oxidation, dries up with nitrogen afterwards.
(4) needle point of removing zone of oxidation is dipped in 15min in the hydrochloric acid-hydrogen peroxide solution (ammoniacal liquor: hydrogen peroxide: water=1:1:4) of 80 ℃, with the fresh SiO2 layer (approximately 2～3nm) of growing, after taking-up, with ultrapure water, rinses, and nitrogen dries up.
(2) functionalisation of surfaces of AFM silicon needle point and the absorption of golden core
(1) needle point after pre-treatment is dipped in to 15h in the aminosilane of 1mL/L or hydrosulphonyl silane ethanolic soln, after taking out, with ethanol, ultrapure water, cleans, nitrogen dries up.
(2) (golden nanometer particle concentration is 1.25 × 10 needle point to be soaked in to the golden nanometer particle colloidal sol of 5nm
15individual/mL) middle 15h, after taking-up, with ultrapure water, rinse, nitrogen dries up.
(3) AFM silicon Tip chemistry is silver-plated
(1) composition of chemical plating liquid used is: Silver Nitrate 0.032mol/L, ammoniacal liquor is (with NH
3meter) 2.24mol/L, acetic acid 1.23mol/L, hydrazine hydrate 0.1mol/L, plating temperature is 25 ℃.
(2) take out after the needle point after ADSORPTION OF GOLD core is soaked in to the chemical plating liquid several seconds, with ultrapure water, rinse well, nitrogen dries up, and can carry out the test of pinpoint enhanced Raman or be placed in vacuum unit preserving.
Fig. 2 A is the scanning electron microscope diagram (SEM) of pure silicon needle point, the about 7nm of radius-of-curvature of needle point.Fig. 2 B is the SEM figure of needle point after chemical silvering 10s, from SEM figure, sees that needle surface covers the silver-colored film of the smooth densification of last layer, the about 24nm of radius-of-curvature of needle point, and silvering thickness is about 17nm.Fig. 2 C is the SEM figure of needle point after chemical silvering 30s, from SEM figure, sees the increase along with depositing time, silver-colored thin layer thickening but slightly coarse, and the about 54nm of radius-of-curvature of needle point, silvering thickness is 47nm.
Embodiment 2
Utilize the acupuncture needle point of the smooth densification that obtains to detect the TERS signal of the 4-PBT molecule of golden monocrystalline (111) surface adsorption, with this, characterize the TERS activity of needle point.
(1) golden monocrystalline (111) is soaked in to 2 × 10
-52h in M4-PBT ethanolic soln, uses alcohol flushing after taking out, then uses N
2dry up.
(2) Fig. 3 is the experimental result of embodiment 2.In Fig. 3, curve a represents the TERS spectrogram of the surperficial 4-PBT molecule of golden monocrystalline (111) under inserting needle state, has occurred obvious 1580cm
-1, 1259cm
-1, 1198cm
-1, 1162cm
-1deng characteristic peak.Curve b has represented the TERS spectrogram that moves back needle point under sample state, does not observe the characteristic peak of 4-PBT molecule.This result shows that prepared smooth sharp-pointed acupuncture needle point has TERS enhanced activity.
Above embodiment is only explanation technical conceive of the present invention and feature, and its object is to allow person skilled in the art can understand content of the present invention and implement accordingly, can not limit the scope of the invention with this.All equivalences that spirit is done according to the present invention change or modify, within all should being encompassed in protection scope of the present invention.
Claims (10)
1. prepare a chemical plating method for smooth sharp-pointed AFM-TERS needle point, it is characterized in that comprising the following steps:
(1) pre-treatment of afm tip
To afm tip surface cleaning, to remove surperficial impurity and organism, then growth or deposition buffer layer;
(2) functionalisation of surfaces of afm tip and the absorption of nucleus
Afm tip after pre-treatment is carried out to functionalisation of surfaces, and unimolecular layer in modification, increases with this bonding force for the treatment of between metal refining and needle point, and last adsorption of nanoparticles, as nucleus, is carried out the reduction of catalytic metal at needle surface with this;
(3) AFM silicon Tip chemistry plating
Select suitable chemical plating solution and plating condition to carry out electroless deposition, the smooth thin metal layer of growing to the needle point of absorption nucleus.
2. a kind of chemical plating method of preparing smooth sharp-pointed AFM-TERS needle point as claimed in claim 1, characterized by further comprising step (4) needle point TERS activity characterization: directly the molecule that is adsorbed on golden monocrystalline (111) surface is carried out to Tip-Enhanced Raman Spectroscopy detection.
3. a kind of chemical plating method of preparing smooth sharp-pointed AFM-TERS needle point as claimed in claim 1, is characterized in that described afm tip is silicon needle point or silicon nitride needle point.
4. a kind of chemical plating method of preparing smooth sharp-pointed AFM-TERS needle point as claimed in claim 1, is characterized in that described buffer layer is at least one of silicon-dioxide or aluminum oxide.
5. a kind of chemical plating method of preparing smooth sharp-pointed AFM-TERS needle point as claimed in claim 1, is characterized in that functionalized at least one being adopted as in hydrosulphonyl silane or aminosilane that step (2) is described.
6. a kind of chemical plating method of preparing smooth sharp-pointed AFM-TERS needle point as claimed in claim 1, is characterized in that described nanoparticle is at least one in gold and silver, copper, platinum, palladium.
7. a kind of chemical plating method of preparing smooth sharp-pointed AFM-TERS needle point as claimed in claim 6, is characterized in that described nano particle diameter is 1～10nm.
8. a kind of chemical plating method of preparing smooth sharp-pointed AFM-TERS needle point as claimed in claim 1, is characterized in that described chemical plating metal is gold and silver or copper.
9. a kind of chemical plating method of preparing smooth sharp-pointed AFM-TERS needle point as claimed in claim 1, is characterized in that the described electroless plating time is 5～50s.
10. a kind of chemical plating method of preparing smooth sharp-pointed AFM-TERS needle point as claimed in claim 1, is characterized in that described afm tip is sharp-pointed, and its radius-of-curvature is less than 24nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410024753.6A CN103741122A (en) | 2014-01-20 | 2014-01-20 | Chemical plating method for preparing smooth and sharp AFM-TERS (Atomic Force Microscopy-Tip-Enhanced Raman Spectroscopy) needle point |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410024753.6A CN103741122A (en) | 2014-01-20 | 2014-01-20 | Chemical plating method for preparing smooth and sharp AFM-TERS (Atomic Force Microscopy-Tip-Enhanced Raman Spectroscopy) needle point |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103741122A true CN103741122A (en) | 2014-04-23 |
Family
ID=50498185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410024753.6A Pending CN103741122A (en) | 2014-01-20 | 2014-01-20 | Chemical plating method for preparing smooth and sharp AFM-TERS (Atomic Force Microscopy-Tip-Enhanced Raman Spectroscopy) needle point |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103741122A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104931733A (en) * | 2015-06-18 | 2015-09-23 | 厦门大学 | Shell isolation silver nanoparticle tip preparation method |
| CN106324290A (en) * | 2016-08-24 | 2017-01-11 | 四川理工学院 | Method for detecting carbon material surface activity based on AFM tip force curve |
| CN106568760A (en) * | 2016-10-18 | 2017-04-19 | 河南大学 | Method for preparing AFM-TERS tip by in situ reduction method |
| CN107043929A (en) * | 2017-03-23 | 2017-08-15 | 中国科学院化学研究所 | A kind of method for generating the coat of metal in atomic force microscope probe surface zone of control |
| CN109416326A (en) * | 2016-06-30 | 2019-03-01 | 国立大学法人京都大学 | The manufacturing method and probe of probe |
| CN113376097A (en) * | 2021-06-08 | 2021-09-10 | 厦门大学 | High-reproducibility preparation method of nano-silver needle tip |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1786268A (en) * | 2005-12-15 | 2006-06-14 | 复旦大学 | Self assembly chemical silver plating method on non metal material surface |
| EP2067878A1 (en) * | 2007-07-31 | 2009-06-10 | Nippon Mining & Metals Co., Ltd. | Plated material having metal thin film formed by electroless plating, and method for production thereof |
| JP2009173999A (en) * | 2008-01-24 | 2009-08-06 | Nippon Mining & Metals Co Ltd | Method for producing metal-coated polyimide resin substrate having excellent resistance to thermal aging |
| CN101655570A (en) * | 2009-09-10 | 2010-02-24 | 同济大学 | Method for preparing laser mirror by seed growing method |
| CN101717927A (en) * | 2009-12-02 | 2010-06-02 | 浙江大学 | Solution for replacing silver plating in deposited nanostructure on surface of silicon matrix and use method thereof |
| CN101775594A (en) * | 2010-02-04 | 2010-07-14 | 西北工业大学 | Method for preparing silver nano material on surfaces of silicon wafers |
| CN102978592A (en) * | 2012-12-24 | 2013-03-20 | 厦门大学 | Method for depositing gold nanoparticles on silicon surface by wet process |
-
2014
- 2014-01-20 CN CN201410024753.6A patent/CN103741122A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1786268A (en) * | 2005-12-15 | 2006-06-14 | 复旦大学 | Self assembly chemical silver plating method on non metal material surface |
| EP2067878A1 (en) * | 2007-07-31 | 2009-06-10 | Nippon Mining & Metals Co., Ltd. | Plated material having metal thin film formed by electroless plating, and method for production thereof |
| JP2009173999A (en) * | 2008-01-24 | 2009-08-06 | Nippon Mining & Metals Co Ltd | Method for producing metal-coated polyimide resin substrate having excellent resistance to thermal aging |
| CN101655570A (en) * | 2009-09-10 | 2010-02-24 | 同济大学 | Method for preparing laser mirror by seed growing method |
| CN101717927A (en) * | 2009-12-02 | 2010-06-02 | 浙江大学 | Solution for replacing silver plating in deposited nanostructure on surface of silicon matrix and use method thereof |
| CN101775594A (en) * | 2010-02-04 | 2010-07-14 | 西北工业大学 | Method for preparing silver nano material on surfaces of silicon wafers |
| CN102978592A (en) * | 2012-12-24 | 2013-03-20 | 厦门大学 | Method for depositing gold nanoparticles on silicon surface by wet process |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104931733A (en) * | 2015-06-18 | 2015-09-23 | 厦门大学 | Shell isolation silver nanoparticle tip preparation method |
| CN104931733B (en) * | 2015-06-18 | 2017-12-22 | 厦门大学 | A kind of preparation method of shell isolated silver nanoparticle needle point |
| CN109416326A (en) * | 2016-06-30 | 2019-03-01 | 国立大学法人京都大学 | The manufacturing method and probe of probe |
| US10900905B2 (en) | 2016-06-30 | 2021-01-26 | Horiba, Ltd. | Probe manufacturing method and probe |
| CN109416326B (en) * | 2016-06-30 | 2021-12-14 | 国立大学法人京都大学 | Method for manufacturing probe and probe |
| CN106324290A (en) * | 2016-08-24 | 2017-01-11 | 四川理工学院 | Method for detecting carbon material surface activity based on AFM tip force curve |
| CN106568760A (en) * | 2016-10-18 | 2017-04-19 | 河南大学 | Method for preparing AFM-TERS tip by in situ reduction method |
| CN107043929A (en) * | 2017-03-23 | 2017-08-15 | 中国科学院化学研究所 | A kind of method for generating the coat of metal in atomic force microscope probe surface zone of control |
| CN107043929B (en) * | 2017-03-23 | 2019-08-16 | 中国科学院化学研究所 | A method of the coat of metal is generated in atomic force microscope probe surface zone of control |
| CN113376097A (en) * | 2021-06-08 | 2021-09-10 | 厦门大学 | High-reproducibility preparation method of nano-silver needle tip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103741122A (en) | Chemical plating method for preparing smooth and sharp AFM-TERS (Atomic Force Microscopy-Tip-Enhanced Raman Spectroscopy) needle point | |
| WookáLee et al. | The direct growth of gold rods on graphene thin films | |
| Ren et al. | Raman spectroscopy on transition metals | |
| Girard et al. | Electrostatic grafting of diamond nanoparticles: a versatile route to nanocrystalline diamond thin films | |
| CN104692827B (en) | A kind of Ag nanometers of preparation method of ball array of Ag SiO2 | |
| Li et al. | Graphene-coated Si nanowires as substrates for surface-enhanced Raman scattering | |
| CN104310372A (en) | Method for directly growing carbon nano tube array on fiber substrate | |
| CN105973865A (en) | Au nano dendrites surface-reinforced Raman scattering substrate and preparation method thereof | |
| WO2010088726A1 (en) | Fabrication of nanoparticles on solid surfaces | |
| CN111455339B (en) | Preparation method of vertical carbon nanotube array for high-absorption-ratio material | |
| TW201908701A (en) | Carrier for raman spectroscopy and method of manufacturing the same | |
| Suzuki et al. | Ethanol gas sensing by a Zn-terminated ZnO (0001) bulk single-crystalline substrate | |
| Nicley et al. | Growth of boron-doped diamond films on gold-coated substrates with and without gold nanoparticle formation | |
| CN107043929B (en) | A method of the coat of metal is generated in atomic force microscope probe surface zone of control | |
| CN104931734A (en) | Shell isolation gold nanoparticle tip preparation method | |
| Hassel et al. | Preparation and specific properties of single crystalline metallic nanowires | |
| CN101240416B (en) | Chemical palladium-plating method on silicon used for surface enhancement infrared spectrum | |
| Pan et al. | Ultrafast ion sputtering modulation of two-dimensional substrate for highly sensitive raman detection | |
| CN108341407A (en) | A kind of carbon nanotube of gold nano particle modification and the preparation method and application thereof | |
| Song et al. | Nondestructive tribochemistry-assisted nanofabrication on GaAs surface | |
| CN102050419B (en) | Magnetic double nano-structure array material and preparation method thereof | |
| CN103787335B (en) | A kind of preparation method of needlepoint type silicon nanowires | |
| CN108693166B (en) | Method for manufacturing surface enhanced Raman scattering substrate based on aluminum nitride nanostructure | |
| Rao et al. | Reversal and control the tip-enhanced Raman scattering efficiency of rough plasmonic probes fabricated using UV-ozone and hydrazine | |
| Kim et al. | A coaxial structure of multiwall carbon nanotubes on vertically aligned Si nanorods and its intrinsic characteristics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140423 |