CN103739929A - Graphene-containing polyolefin high semi-conductive shielding material for cable and preparation method thereof - Google Patents
Graphene-containing polyolefin high semi-conductive shielding material for cable and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a graphene-containing polyolefin high semi-conductive shielding material for a cable and a preparation method thereof and aims at reducing the volume resistivity of the semi-conductive shielding material. The shielding material disclosed by the invention comprises the following components in percentage by weight: 83%-90% of ethylene-vinyl acetate copolymer, 3%-10% of graphene powder, 3%-6% of white oil, 0.5%-1% of antioxidant and 0.3%-0.6% of zinc stearate. The preparation method disclosed by the invention comprises the steps of mixing, plasticizing, granulating, dehydrating and drying. Compared with the prior art, graphene is uniformly dispersed into the ethylene-vinyl acetate copolymer, so that the volume resistivity is reduced to below 30 omega. cm, a homogeneous electric field is greatly improved, smooth and gapless contact of a conductor, an insulation layer and a metal shielding layer is realized, the effect of shielding the homogeneous electric field of the cable is improved, the electrical performance and the long-term operation reliability of the cable are improved, and the shielding material is suitable for non-metal shielding layers of the cables of above 6kV.
Description
Technical field
The present invention relates to a kind of mesohigh power transmission and distribution cable material and preparation method thereof, semiconductive shieldin material that particularly a kind of cable is used and preparation method thereof.
Background technology
Mesohigh cross-linked polyethylene insulated cable (crosslinked cable) is the very large a kind of power cable of usage quantity in power transmission and distribution field.The semiconductive shieldin material that crosslinked cable is used at present mainly adopts the dispersed mode that adds graphitized carbon black in ethylene-vinyl acetate copolymer EVA to make, but owing to affected by carbon black conductive factor undesirable and that grain graininess is thin not, the volume specific resistance of semiconductive shieldin material is between 40-100 Ω cm, the slickness of material surface is good not, thereby not ideal enough to cable shield homogenizing electric field effect, particularly evident on the impact of high pressure and extra-high-tension cable.
Summary of the invention
The object of this invention is to provide high semiconductive shieldin material of polyolefine of a kind of cable graphene-containing and preparation method thereof, the technical problem that solve is to reduce the volume specific resistance of semiconductive shieldin material, improves cable shield homogenizing electric field effect.
The present invention is by the following technical solutions: the high semiconductive shieldin material of polyolefine of graphene-containing for a kind of cable, by following quality percentage composition, formed: ethylene-vinyl acetate copolymer 83%～90%, Graphene powder 3%～10%, white oil 3%～6%, oxidation inhibitor 0.5%～1%, Zinic stearas 0.3%～0.6%.
The particle diameter of Graphene powder of the present invention is not more than 10 μ m.
Oxidation inhibitor of the present invention is 4,4'-thiobis (the 6-tertiary butyl-3-methylphenol).
Cable of the present invention is comprised of following quality percentage composition with the high semiconductive shieldin material of polyolefine of graphene-containing: ethylene-vinyl acetate copolymer 85%～88%, Graphene powder 7%～8.5%, white oil 5%～5.4%, oxidation inhibitor 0.6%～0.7%, Zinic stearas 0.4%～0.5%.
Ethylene-vinyl acetate copolymer of the present invention (EVA) 86%, Graphene powder 8%.
A preparation method for the high semiconductive shieldin material of polyolefine of graphene-containing for cable, comprises the following steps:
One, mix, by quality percentage composition, by ethylene-vinyl acetate copolymer (EVA) 83%～90%, Graphene powder 3%～10%, white oil 3%～6%, oxidation inhibitor 0.5%～1%, Zinic stearas 0.3%～0.6%, rotating speed with 150-200rpm is uniformly mixed 1-2 minute, the compound that obtains mixing;
Two, plasticizing, plastifies compound for the first time, and screw speed is 180-220rpm, and the temperature in each region, plasticizing zone is: 1 district 85-90 ℃, 2 district 105-110 ℃, 3 district 115-125 ℃, 4 district 100-105 ℃, 5 district 90-95 ℃; Plastify for the second time, screw speed is 120-150rpm again, and the temperature in each region, extrusion molding district is: 1 district 85-90 ℃, and 2 district 85-90 ℃, head 105-110 ℃, obtains plasticizing material;
Three, granulation, is 105-115 ℃ by plasticizing material in temperature, and pressure is under 5.0-7.0MPa condition, makes the cylindrical particle of diameter 3.5mm × height 3mm, purifies waste water and is cooled to room temperature;
Four, dehydration, is 1080-1200rpm by cylindrical particle at rotating speed, and the time is under 15-25min condition, dewaters;
Five, the material after dehydration is through boiled bed drying, and temperature is 45-50 ℃, obtains the high semiconductive shieldin material of polyolefine of cable graphene-containing.
Method steps five of the present invention obtains the high semiconductive shieldin material of polyolefine of cable graphene-containing, naturally cools to room temperature.
Method steps one ethylene-vinyl acetate copolymer of the present invention (EVA) 85%～88%, Graphene powder 7%～8.5%, white oil 5%～5.4%, oxidation inhibitor 0.6%～0.7%, Zinic stearas 0.4%～0.5%.
Method steps one ethylene-vinyl acetate copolymer of the present invention (EVA) 86%, Graphene powder 8%.
Preparation method of the present invention adopts the reciprocating mixing extrusion granulating unit of WF140-180 type.
The present invention compared with prior art, graphene uniform is distributed in ethylene-vinyl acetate copolymer EVA resin, reduce the volume specific resistance of semiconductive shieldin material, its volume specific resistance drops to below 30 Ω cm, greatly improve homogenizing electric field, the smooth gapless that realizes conductor, insulation layer and metal screen layer contacts, and improves cable shield homogenizing electric field effect, improve the electric property of cable and the reliability of long-time running, be applicable to the nonmetal screen layer of the above cable of 6kV.
Accompanying drawing explanation
Fig. 1 is preparation method's schema of the high semiconductive shieldin material of polyolefine of cable of the present invention graphene-containing.
Embodiment
The high semiconduction of polyolefine (semiconduction) the shielding material of graphene-containing for cable of the present invention, by following quality percentage composition, formed: ethylene-vinyl acetate copolymer EVA83%～90%, Graphene powder 3%～10%, white oil 3%～6%, oxidation inhibitor 0.5%～1%, Zinic stearas 0.3%～0.6%.
The particle diameter of described Graphene powder is not more than 10 μ m.
Described oxidation inhibitor is 4,4'-thiobis (the 6-tertiary butyl-3-methylphenol).
The high semiconduction of polyolefine (semiconduction) the shielding material of graphene-containing for cable of the present invention, at the volume specific resistance≤30 Ω cm of 20 ℃.
The preparation method of the high semiconductive shieldin material of polyolefine (shielding material) of graphene-containing for cable of the present invention, as shown in Figure 1, comprises the following steps:
One, mix, by ethylene-vinyl acetate copolymer EVA, particle diameter is not more than the Graphene powder of 10 μ m, white oil, oxidation inhibitor 4, 4'-thiobis (the 6-tertiary butyl-3-methylphenol) and Zinic stearas, through elevating hopper, be respectively charged into raw material cabin, with weight-loss metering scale consecutive weighings, under room temperature (20 ℃), by quality percentage composition, by ethylene-vinyl acetate copolymer EVA83%～90%, Graphene powder 3%～10%, white oil 3%～6%, oxidation inhibitor 0.5%～1%, Zinic stearas 0.3%～0.6%, join in the mixing district of the reciprocating mixing extrusion granulating unit of WF140-180 type of sub-chemical industry outfit company limited of Nanjing section, rotating speed with 150-200rpm is uniformly mixed 1-2 minute, mix, the compound that obtains mixing.
The reciprocating mixing extrusion granulating unit of WF140-180 type that the present embodiment adopts is a set of multi-functional continuous device; be provided with host groups and auxiliary unit two portions; host groups comprises reciprocating mixing district; plasticizing zone, extrusion molding district and granulation zone; auxiliary unit comprises centrifuge and ebullated bed, therefore whole mixing, plastify with extrude, granulation, dehydration all complete on this unit.
Ethylene-vinyl acetate copolymer EVA is as the base-material of (shielding material).
Graphene powder is as conductive filler material.Graphene has splendid conductivity, and the function ingredients material that shielding is expected as high semiconduction (semiconduction) makes shielding material become semiconductive material, by the selection to Graphene amount, meets shielding and expects the volume specific resistance≤30 Ω cm at 20 ℃.
White oil, as lubricant and assisted demoulding agent, is protected the processing characteristics of shielding material.
Oxidation inhibitor suppresses or delays the oxidative degradation of shielding material, extends the work-ing life of cable.
Zinic stearas, as lubricant, reduces the frictional force that shielding material contacts with Preparation equipment machinery inside in the course of processing, improves the mobility of shielding material.
Two, plasticizing, carries out twice plasticizing continuously, and each material in mixing component that step 1 obtains is uniformly dispersed after melting by physical force, forms stable equal phase component.The plasticizing zone of compound being sent into reciprocating mixing extrusion granulating unit, plastifies for the first time, and screw speed is 180-220rpm, and the temperature in each region, plasticizing zone is as table 1.Heating up 1 hour in advance in plasticizing zone, heats up and reach the temperature (temperature of extrusion molding district, granulation zone also so heats up) in table 1 in Shi Ge district.
Table 1 plastify for the first time plasticizing zone temperature (℃)
| 1st district | 2nd district | 3rd district | 4th district | 5th district |
| 85-90 | 105-110 | 115-125 | 100-105 | 90-95 |
Material after plasticizing is admitted to the extrusion molding district of reciprocating mixing extrusion granulating unit for the first time, plastifies for the second time, obtains plasticizing material, and screw speed is 120-150rpm, and the temperature in each region, extrusion molding district is as table 2.
Table 2 plastify for the second time extrusion molding district temperature (℃)
| 1st district | 2nd district | Head |
| 85-90 | 85-90 | 105-110 |
Three, granulation, by plastifying the granulation zone of expecting to send into reciprocating mixing extrusion granulating unit, is 105-115 ℃ in temperature, under the condition that pressure is 5.0-7.0MPa, makes the cylindrical particle of diameter 3.5mm × height 3mm, purifies waste water and is cooled to room temperature.Purify waste water as general softening water.
Four, dewatering, cylindrical particle is sent into the centrifuge of reciprocating mixing extrusion granulating unit, is 1080-1200rpm at rotating speed, under the condition that the time is 15-25min, dewaters.
Five, screen, weigh, pack; material after dehydration is sent into the boiled bed drying of reciprocating mixing extrusion granulating unit through storage hopper; temperature is 45-50 ℃; by vibratory screening apparatus, carried out the screening of particle; remove powder, the particle sizing that granularity is not met to diameter 3.5mm × height 3mm goes out, and obtains the high semiconductive shieldin material of polyolefine of cable graphene-containing; naturally cool to room temperature, packing warehouse-in after weighing.
The high semiconductive shieldin material of polyolefine of the cable graphene-containing that embodiment 1-5 employing the inventive method prepares, by GB/T1033-2008 test density, by GB/T1040-2006 test tensile strength, by 20 ℃ of volume specific resistances of GB/T3048.3-2007 test.Carry out air heat ageing test, by GB/T1040-2006 test tensile strength velocity of variation, by GB/T2951.12-2008 elongation at break velocity of variation.With the 10KV semiconduction inner shield material YPJ-10 of prior art as a comparison case, by above-mentioned identical method, carry out test comparison, test result is in Table 3.YPJ-10 adds graphitized carbon black as conductive filler material in ethylene-vinyl acetate copolymer EVA.
Embodiment 1,
One, quality percentage composition is: EVA83%, Graphene powder 10%, white oil 6%, oxidation inhibitor 0.5%, Zinic stearas 0.5%.With the rotating speed of 150rpm, be uniformly mixed 2 minutes.
Two, plasticizing for the first time, screw speed is controlled at 180rpm/min, and plasticization temperature is for the first time:
| 1st district | 2nd district | 3rd district | 4th district | 5th district |
| 85 | 105 | 115 | 100 | 90 |
Plasticizing for the second time, screw speed is 120rpm, plasticization temperature is for the second time:
| 1st district | 2nd district | Head |
| 85 | 85 | 105 |
Three, temperature is 105 ℃, and pressure is 5.0MPa, makes the cylindrical particle of diameter 3.5mm × height 3mm.
Four, rotating speed is 1080rmp, and the time is 23min, dehydration.
Five, boiled bed drying, 50 ℃ dry, cooling, screens, and obtains the high semiconductive shieldin material of polyolefine of cable graphene-containing, packing warehouse-in after weighing.
Embodiment 2,
One, quality percentage composition is: EVA resin 86%, Graphene powder 7%, white oil 5.4%, oxidation inhibitor 1%, Zinic stearas 0.6%.With the rotating speed of 200rpm, be uniformly mixed 1 minute.
Two, plasticizing for the first time, screw speed is controlled at 200rpm/min, and plasticization temperature is for the first time:
| 1st district | 2nd district | 3rd district | 4th district | 5th district |
| 87 | 108 | 120 | 103 | 92 |
Plasticizing for the second time, screw speed is 150rpm, plasticization temperature is for the second time:
| 1st district | 2nd district | Head |
| 87 | 89 | 107 |
Three, temperature is 107 ℃, and pressure is 6.5M Pa, makes the cylindrical particle of diameter 3.5mm × height 3mm.
Four, rotating speed is 1140rpm, and the time is 25min, dehydration.
Five, boiled bed drying, 48 ℃ dry, cooling, screens, and obtains the high semiconductive shieldin material of polyolefine of cable graphene-containing, packing warehouse-in after weighing.
Embodiment 3,
One, quality percentage composition is: EVA resin 88%, Graphene powder 8%, white oil 3%, oxidation inhibitor 0.7%, Zinic stearas 0.3%.With the rotating speed of 200rpm, be uniformly mixed 1 minute.
Two, plasticizing for the first time, screw speed is controlled at 200rpm/min, and plasticization temperature is for the first time:
| 1st district | 2nd district | 3rd district | 4th district | 5th district |
| 90 | 110 | 125 | 105 | 90 |
Plasticizing for the second time, screw speed is 150rpm, plasticization temperature is for the second time:
| 1st district | 2nd district | Head |
| 90 | 90 | 110 |
Three, temperature is 110 ℃, and pressure is 7.0M Pa, makes the cylindrical particle of diameter 3.5mm × height 3mm.
Four, rotating speed is 1140rmp, and the time is 22min, dehydration.
Five, boiled bed drying, 47 ℃ dry, cooling, screens, and obtains the high semiconductive shieldin material of polyolefine of cable graphene-containing, packing warehouse-in after weighing.
Embodiment 4,
One, quality percentage composition is: EVA resin 90%, Graphene powder 3%, white oil 6%, oxidation inhibitor 0.6%, Zinic stearas 0.4%.With the rotating speed of 180rpm, be uniformly mixed 2 minutes.
Two, plasticizing for the first time, screw speed is controlled at 220rpm/min, and plasticization temperature is for the first time:
| 1st district | 2nd district | 3rd district | 4th district | 5th district |
| 88 | 107 | 120 | 105 | 95 |
Plasticizing for the second time, screw speed is 140rpm, plasticization temperature is for the second time:
| 1st district | 2nd district | Head |
| 88 | 89 | 110 |
Three, temperature is 110 ℃, and pressure is 6.7M Pa, makes the cylindrical particle of diameter 3.5mm × height 3mm.
Four, rotating speed is 1170rmp, and the time is 15min, dehydration.
Five, boiled bed drying, 50 ℃ dry, cooling, screens, and obtains the high semiconductive shieldin material of polyolefine of cable graphene-containing, packing warehouse-in after weighing.
Embodiment 5,
One, quality percentage composition is: EVA resin 85%, Graphene powder 8.5%, white oil 5%, oxidation inhibitor 1%, Zinic stearas 0.5%.With the rotating speed of 180rpm, be uniformly mixed 1.5 minutes.
Two, plasticizing for the first time, screw speed is controlled at 180rpm/min, and plasticization temperature is for the first time:
| 1st district | 2nd district | 3rd district | 4th district | 5th district |
| 90 | 110 | 125 | 105 | 95 |
Plasticizing for the second time, screw speed is 150rpm, plasticization temperature is for the second time:
| 1st district | 2nd district | Head |
| 90 | 90 | 110 |
Three, temperature is 115 ℃, and pressure is 5.5MPa, makes the cylindrical particle of diameter 3.5mm × height 3mm.
Four, rotating speed is 1200rmp, and the time is 17min, dehydration.
Five, boiled bed drying, 45 ℃ dry, cooling, screens, and obtains the high semiconductive shieldin material of polyolefine of cable graphene-containing, packing warehouse-in after weighing.
The performance test results of table 3 embodiment 1-5, comparative example
By contrast, can be found out, the high semiconductive shieldin material of polyolefine of graphene-containing for cable of the present invention, volume specific resistance and mechanical property are better than the semiconduction inner shield material YPJ-10 of prior art.
Graphene has excellent conductivity, good mechanical property and heat conductivility, adopt the Graphene of granularity below 10 microns, evenly spread in EVA resin, the high semiconductive shieldin material of polyolefine of graphene-containing for the cable preparing, its volume specific resistance can drop to below 30 Ω cm, adopt the high semiconductive shieldin material of polyolefine of cable of the present invention graphene-containing to replace after the compound semiconductive shieldin material of carbon black of prior art, can greatly improve homogenizing electric field and realize conductor, the technique effect that insulation contacts with the smooth gapless of metal screen layer, can be for the nonmetal screen layer of 6kV and above cable, improve the electric property of cable and the reliability of long-time running.
The present invention has overcome the compound semiconductive shieldin material of prior art carbon black because carbon black conductive is not ideal enough and the affect problem of the factor of particle fineness on cable quality, especially at 20 ℃ of cables, with the high semiconductive shieldin material of polyolefine of graphene-containing, there is the excellent technique effect of volume specific resistance≤30 Ω cm, except significantly improving the conductivity of semiconductive shieldin material product, its slipperiness, mechanical property, compared with the compound semiconductive shieldin material of carbon black of stability and homogeneity and prior art, be all improved, and expressing technique performance improves, extrusion efficiency improves 7%-15% compared with prior art material.The shielding material of prior art is when 65 forcing machines are extruded, temperature is arranged on 90-100 ℃, screw speed is at 26rpm/min, fusion pressure is at 15MPa, gel quantity per hour is at 20kg, and employing the inventive method is prepared the high semiconductive shieldin material of polyolefine of cable graphene-containing, when same temperature setting, same screw speed and fusion pressure, its gel quantity per hour is 21.4-23kg, and extrusion efficiency obviously improves.
Claims (10)
1. the high semiconductive shieldin material of polyolefine of a cable use graphene-containing, it is characterized in that: the high semiconductive shieldin material of polyolefine of described cable graphene-containing is comprised of following quality percentage composition: ethylene-vinyl acetate copolymer (EVA) 83%～90%, Graphene powder 3%～10%, white oil 3%～6%, oxidation inhibitor 0.5%～1%, Zinic stearas 0.3%～0.6%.
2. the high semiconductive shieldin material of polyolefine of graphene-containing for cable according to claim 1, is characterized in that: the particle diameter of described Graphene powder is not more than 10 μ m.
3. the high semiconductive shieldin material of polyolefine of graphene-containing for cable according to claim 1, is characterized in that: described oxidation inhibitor is 4,4'-thiobis (the 6-tertiary butyl-3-methylphenol).
4. the high semiconductive shieldin material of polyolefine of graphene-containing for cable according to claim 1, it is characterized in that: the high semiconductive shieldin material of polyolefine of described cable graphene-containing is comprised of following quality percentage composition: ethylene-vinyl acetate copolymer (EVA) 85%～88%, Graphene powder 7%～8.5%, white oil 5%～5.4%, oxidation inhibitor 0.6%～0.7%, Zinic stearas 0.4%～0.5%.
5. the high semiconductive shieldin material of polyolefine of graphene-containing for cable according to claim 4, is characterized in that: described ethylene-vinyl acetate copolymer (EVA) 86%, Graphene powder 8%.
6. a preparation method for the high semiconductive shieldin material of polyolefine of graphene-containing for cable, comprises the following steps:
One, mix, by quality percentage composition, by ethylene-vinyl acetate copolymer (EVA) 83%～90%, Graphene powder 3%～10%, white oil 3%～6%, oxidation inhibitor 0.5%～1%, Zinic stearas 0.3%～0.6%, rotating speed with 150-200rpm is uniformly mixed 1-2 minute, the compound that obtains mixing;
Two, plasticizing, plastifies compound for the first time, and screw speed is 180-220rpm, and the temperature in each region, plasticizing zone is: 1 district 85-90 ℃, 2 district 105-110 ℃, 3 district 115-125 ℃, 4 district 100-105 ℃, 5 district 90-95 ℃; Plastify for the second time, screw speed is 120-150rpm again, and the temperature in each region, extrusion molding district is: 1 district 85-90 ℃, and 2 district 85-90 ℃, head 105-110 ℃, obtains plasticizing material;
Three, granulation, is 105-115 ℃ by plasticizing material in temperature, and pressure is under 5.0-7.0MPa condition, makes the cylindrical particle of diameter 3.5mm × height 3mm, purifies waste water and is cooled to room temperature;
Four, dehydration, is 1080-1200rpm by cylindrical particle at rotating speed, and the time is under 15-25min condition, dewaters;
Five, the material after dehydration is through boiled bed drying, and temperature is 45-50 ℃, obtains the high semiconductive shieldin material of polyolefine of cable graphene-containing.
7. the preparation method of the high semiconductive shieldin material of polyolefine of graphene-containing for cable according to claim 6, is characterized in that: described step 5 obtains the high semiconductive shieldin material of polyolefine of cable graphene-containing, naturally cools to room temperature.
8. the preparation method of the high semiconductive shieldin material of polyolefine of graphene-containing for cable according to claim 6, it is characterized in that: described step 1 ethylene-vinyl acetate copolymer (EVA) 85%～88%, Graphene powder 7%～8.5%, white oil 5%～5.4%, oxidation inhibitor 0.6%～0.7%, Zinic stearas 0.4%～0.5%.
9. the preparation method of the high semiconductive shieldin material of polyolefine of graphene-containing for cable according to claim 8, is characterized in that: described step 1 ethylene-vinyl acetate copolymer (EVA) 86%, Graphene powder 8%.
10. the preparation method of the high semiconductive shieldin material of polyolefine of graphene-containing for cable according to claim 6, is characterized in that: described preparation method adopts the reciprocating mixing extrusion granulating unit of WF140-180 type.
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103980599A (en) * | 2014-05-30 | 2014-08-13 | 江苏德威新材料股份有限公司 | Semiconductive shielding material for high-voltage direct-current cables and preparation method thereof |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4085249A (en) * | 1974-12-20 | 1978-04-18 | Nippon Unicar Company Limited | Semiconductive composition having controlled strippability |
| JPS58222140A (en) * | 1982-06-18 | 1983-12-23 | Mitsubishi Petrochem Co Ltd | Semi-conductive resin composition |
| CN101891915A (en) * | 2010-07-06 | 2010-11-24 | 苏州市双鑫新材料科技有限公司 | Strippable semi-conductive shielding material for insulation of cross-linked cable |
| CN102382354A (en) * | 2011-08-31 | 2012-03-21 | 泛亚电缆集团有限公司 | Semiconductive shielding material of rubber cable and preparation method thereof |
| CN103030865A (en) * | 2011-10-10 | 2013-04-10 | 中国石油化工股份有限公司 | Cross-linking semiconductive inner shielding cable material for 35KV crosslinked polyethylene cable and preparation method thereof |
| CN103097444A (en) * | 2010-04-06 | 2013-05-08 | 博里利斯股份公司 | Semiconductive polyolefin composition comprising conductive filler |
-
2014
- 2014-01-10 CN CN201410012969.0A patent/CN103739929B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4085249A (en) * | 1974-12-20 | 1978-04-18 | Nippon Unicar Company Limited | Semiconductive composition having controlled strippability |
| JPS58222140A (en) * | 1982-06-18 | 1983-12-23 | Mitsubishi Petrochem Co Ltd | Semi-conductive resin composition |
| CN103097444A (en) * | 2010-04-06 | 2013-05-08 | 博里利斯股份公司 | Semiconductive polyolefin composition comprising conductive filler |
| CN101891915A (en) * | 2010-07-06 | 2010-11-24 | 苏州市双鑫新材料科技有限公司 | Strippable semi-conductive shielding material for insulation of cross-linked cable |
| CN102382354A (en) * | 2011-08-31 | 2012-03-21 | 泛亚电缆集团有限公司 | Semiconductive shielding material of rubber cable and preparation method thereof |
| CN103030865A (en) * | 2011-10-10 | 2013-04-10 | 中国石油化工股份有限公司 | Cross-linking semiconductive inner shielding cable material for 35KV crosslinked polyethylene cable and preparation method thereof |
Cited By (15)
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|---|---|---|---|---|
| CN103980599A (en) * | 2014-05-30 | 2014-08-13 | 江苏德威新材料股份有限公司 | Semiconductive shielding material for high-voltage direct-current cables and preparation method thereof |
| CN104356502A (en) * | 2014-12-08 | 2015-02-18 | 远东电缆有限公司 | End chain functional graphene modified intelligent energy cable, shielding material and manufacturing method thereof |
| EP3034468A1 (en) | 2014-12-18 | 2016-06-22 | Nawrocki, Piotr | Signal cable and its application |
| CN105131409A (en) * | 2015-06-26 | 2015-12-09 | 中国航空工业集团公司北京航空材料研究院 | Preparation method of graphene semiconductor shield material |
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| CN106653150A (en) * | 2017-01-13 | 2017-05-10 | 广安市华蓥山领创电子有限公司 | Graphene wire |
| CN106653150B (en) * | 2017-01-13 | 2018-04-17 | 广安市华蓥山领创电子有限公司 | A kind of graphene electric wire |
| CN107011568A (en) * | 2017-04-19 | 2017-08-04 | 上海电气集团股份有限公司 | Composite graphite alkene/carbon black is the semi-conducting polymer and preparation method of conducting medium |
| CN107011568B (en) * | 2017-04-19 | 2019-12-20 | 上海电气集团股份有限公司 | Semiconductor polymer with composite graphene/carbon black as conductive medium and preparation method thereof |
| CN107815003A (en) * | 2017-11-14 | 2018-03-20 | 河南胜华电缆集团有限公司 | A kind of high insulating refractory polyolefin/graphene semiconductive composite and preparation method thereof |
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