CN103731594A - 紧凑型像素中高动态范围成像 - Google Patents
紧凑型像素中高动态范围成像 Download PDFInfo
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- CN103731594A CN103731594A CN201310317708.5A CN201310317708A CN103731594A CN 103731594 A CN103731594 A CN 103731594A CN 201310317708 A CN201310317708 A CN 201310317708A CN 103731594 A CN103731594 A CN 103731594A
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- imaging
- pixel
- capacitive region
- light
- imaging pixel
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- 238000003384 imaging method Methods 0.000 title claims abstract description 65
- 238000012546 transfer Methods 0.000 claims description 20
- 239000003990 capacitor Substances 0.000 claims description 15
- 239000002019 doping agent Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000004044 response Effects 0.000 claims description 5
- 230000000295 complement effect Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 238000009825 accumulation Methods 0.000 claims 4
- 238000009792 diffusion process Methods 0.000 abstract description 46
- 238000007667 floating Methods 0.000 abstract description 27
- 230000006870 function Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 206010027476 Metastases Diseases 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 208000024754 bloodshot eye Diseases 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000009401 metastasis Effects 0.000 description 1
- 201000005111 ocular hyperemia Diseases 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/651,092 US8957359B2 (en) | 2012-10-12 | 2012-10-12 | Compact in-pixel high dynamic range imaging |
US13/651,092 | 2012-10-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103731594A true CN103731594A (zh) | 2014-04-16 |
CN103731594B CN103731594B (zh) | 2017-12-05 |
Family
ID=50455509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310317708.5A Active CN103731594B (zh) | 2012-10-12 | 2013-07-26 | 紧凑型像素中高动态范围成像 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8957359B2 (zh) |
CN (1) | CN103731594B (zh) |
TW (1) | TWI518887B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106449681A (zh) * | 2016-10-10 | 2017-02-22 | 上海华力微电子有限公司 | 灵敏度可调控的图像传感器结构 |
CN107360738A (zh) * | 2015-04-03 | 2017-11-17 | 索尼半导体解决方案公司 | 固态成像元件、成像设备和电子器械 |
TWI646821B (zh) * | 2016-01-30 | 2019-01-01 | 原相科技股份有限公司 | 可獲取較高影像亮度動態範圍的影像感測電路及方法 |
CN110233979A (zh) * | 2019-06-06 | 2019-09-13 | 昆山锐芯微电子有限公司 | 图像传感器及其读出电路、像素结构 |
CN110729317A (zh) * | 2018-07-17 | 2020-01-24 | 奕景科技(香港)有限公司 | 固态成像装置,制造固态成像装置的方法和电子设备 |
WO2022061761A1 (zh) * | 2020-09-25 | 2022-03-31 | 深圳市大疆创新科技有限公司 | 图像传感器及其控制方法、搭载图像传感器的成像装置 |
CN114641981A (zh) * | 2020-12-15 | 2022-06-17 | 深圳市大疆创新科技有限公司 | 图像传感器及其控制方法、图像处理器、成像装置 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9185273B2 (en) | 2012-09-19 | 2015-11-10 | Semiconductor Components Industries, Llc | Imaging pixels with improved dynamic range |
JP6406912B2 (ja) * | 2014-07-24 | 2018-10-17 | キヤノン株式会社 | 撮像装置並びにその駆動方法 |
JP6700656B2 (ja) * | 2014-10-31 | 2020-05-27 | キヤノン株式会社 | 撮像装置 |
US9762824B2 (en) * | 2015-12-30 | 2017-09-12 | Raytheon Company | Gain adaptable unit cell |
FR3050596B1 (fr) | 2016-04-26 | 2018-04-20 | New Imaging Technologies | Systeme imageur a deux capteurs |
US11011560B2 (en) * | 2017-12-26 | 2021-05-18 | Alexander Krymski | Image sensors, methods, and high dynamic range pixels with variable capacitance |
US10785426B2 (en) | 2018-05-15 | 2020-09-22 | Semiconductor Components Industries, Llc | Apparatus and methods for generating high dynamic range images |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6850278B1 (en) * | 1998-11-27 | 2005-02-01 | Canon Kabushiki Kaisha | Solid-state image pickup apparatus |
US6791383B2 (en) * | 2002-10-07 | 2004-09-14 | Texas Instruments Incorporated | Reduced gate leakage current in thin gate dielectric CMOS integrated circuits |
TWI436474B (zh) * | 2007-05-07 | 2014-05-01 | Sony Corp | A solid-state image pickup apparatus, a manufacturing method thereof, and an image pickup apparatus |
US9153614B2 (en) * | 2007-08-15 | 2015-10-06 | Micron Technology, Inc. | Method and apparatus for lens alignment for optically sensitive devices and systems implementing same |
JP5369505B2 (ja) * | 2008-06-09 | 2013-12-18 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
EP2133918B1 (en) * | 2008-06-09 | 2015-01-28 | Sony Corporation | Solid-state imaging device, drive method thereof and electronic apparatus |
JP5392533B2 (ja) * | 2008-10-10 | 2014-01-22 | ソニー株式会社 | 固体撮像素子、光学装置、信号処理装置及び信号処理システム |
-
2012
- 2012-10-12 US US13/651,092 patent/US8957359B2/en active Active
-
2013
- 2013-07-16 TW TW102125421A patent/TWI518887B/zh active
- 2013-07-26 CN CN201310317708.5A patent/CN103731594B/zh active Active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107360738A (zh) * | 2015-04-03 | 2017-11-17 | 索尼半导体解决方案公司 | 固态成像元件、成像设备和电子器械 |
CN107360738B (zh) * | 2015-04-03 | 2020-10-27 | 索尼半导体解决方案公司 | 固态成像元件、成像设备和电子器械 |
TWI646821B (zh) * | 2016-01-30 | 2019-01-01 | 原相科技股份有限公司 | 可獲取較高影像亮度動態範圍的影像感測電路及方法 |
CN106449681A (zh) * | 2016-10-10 | 2017-02-22 | 上海华力微电子有限公司 | 灵敏度可调控的图像传感器结构 |
CN110729317A (zh) * | 2018-07-17 | 2020-01-24 | 奕景科技(香港)有限公司 | 固态成像装置,制造固态成像装置的方法和电子设备 |
CN110233979A (zh) * | 2019-06-06 | 2019-09-13 | 昆山锐芯微电子有限公司 | 图像传感器及其读出电路、像素结构 |
CN110233979B (zh) * | 2019-06-06 | 2021-11-19 | 锐芯微电子股份有限公司 | 图像传感器及其读出电路、像素结构 |
WO2022061761A1 (zh) * | 2020-09-25 | 2022-03-31 | 深圳市大疆创新科技有限公司 | 图像传感器及其控制方法、搭载图像传感器的成像装置 |
CN114641981A (zh) * | 2020-12-15 | 2022-06-17 | 深圳市大疆创新科技有限公司 | 图像传感器及其控制方法、图像处理器、成像装置 |
Also Published As
Publication number | Publication date |
---|---|
US8957359B2 (en) | 2015-02-17 |
CN103731594B (zh) | 2017-12-05 |
TW201415615A (zh) | 2014-04-16 |
TWI518887B (zh) | 2016-01-21 |
US20140103189A1 (en) | 2014-04-17 |
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