CN103730402B - A kind of manufacture method of shallow trench isolation - Google Patents
A kind of manufacture method of shallow trench isolation Download PDFInfo
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- CN103730402B CN103730402B CN201210385109.2A CN201210385109A CN103730402B CN 103730402 B CN103730402 B CN 103730402B CN 201210385109 A CN201210385109 A CN 201210385109A CN 103730402 B CN103730402 B CN 103730402B
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- shallow trench
- manufacture method
- dielectric layer
- trench isolation
- plasma
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- 238000002955 isolation Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 210000002381 Plasma Anatomy 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 40
- 238000005530 etching Methods 0.000 claims abstract description 21
- 239000004568 cement Substances 0.000 claims abstract description 17
- 239000002131 composite material Substances 0.000 claims abstract description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 28
- GQPLMRYTRLFLPF-UHFFFAOYSA-N nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052786 argon Inorganic materials 0.000 claims description 14
- 239000001272 nitrous oxide Substances 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 5
- 230000002085 persistent Effects 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium(0) Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 125000004122 cyclic group Chemical class 0.000 abstract description 5
- 238000005755 formation reaction Methods 0.000 abstract description 5
- 238000004140 cleaning Methods 0.000 abstract description 4
- 230000003628 erosive Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000006011 modification reaction Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005056 compaction Methods 0.000 description 1
- 230000000295 complement Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000977 initiatory Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Abstract
The invention discloses the manufacture method of a kind of shallow trench isolation, use first dielectric layer deposited in shallow trench, and etched portions dielectric layer, afterwards the dielectric layer after described etching is carried out this cyclic process of Cement Composite Treated by Plasma, enable to deposited dielectric layer more closely knit, the wet etching rate of dielectric layer can be reduced simultaneously, thus avoid the formation of seam and/or hole, it also avoid the wet-cleaning erosion to dielectric layer, it is greatly improved the performance of STI, is conducive to improving performance and the yield of device.
Description
Technical field
The present invention relates to IC manufacturing field, the manufacture method isolated particularly to a kind of shallow trench.
Background technology
In advanced complementary metal oxide semiconductors (CMOS) (CMOS) industry, the characteristic size of device is constantly reducing, structure
Become the element more crypto set of circuit, then being effectively dielectrically separated between circuit just becomes more important.Namely in prior art
Shallow trench isolation (Shallow Trench Isolation, STI) be necessary for that there are preferably insulating properties.
In order to tackle the STI of complex region, have been developed for now multiple fill method, such as use chemical gaseous phase deposition
(CVD) and plasma reinforced chemical vapour deposition (PECVD) etc., it can in addition contain use sputtering technology etc., chemistry is used afterwards
Mechanical lapping (CMP) technique makes surface planarisation.
Currently for 45nm and with the CMOS manufacturing process of lower node, it is possible to use sub-atmospheric pressure chemical vapor deposition method
(SACVD) tetraethyl orthosilicate (TEOS) and ozone (O, are utilized3), high-aspect-ratio (high aspect ratio process,
HARP) it is filled with under method forming STI.
Refer to Fig. 1, form groove the most on substrate 1, wherein, the upper surface of described substrate 1 is formed with pad oxide
(pad oxide) 2, described pad oxide 2 is formed silicon nitride layer 3, then forms lining oxygen on the sidewall and diapire of groove
Changing layer 4, carry out filling between groove gap (gap fill) technique afterwards, in described groove, (usually silica is thin for dielectric layer deposited 5
Film), but owing to described groove has higher depth-to-width ratio (AR), as worked as AR > 10, and the nature of silicon oxide thin film, than
Easily shrink as under high temperature, and its direction of growth is to interstitial growth from recess sidewall, it is easy to will be at the medium of deposit
Layer 5 is formed seam (seam) 6, or even forms hole (void) 7.But, silicon oxide thin film degree of compaction is poor, and has higher wet
Etching rate, then, after carrying out CMP and cleaning, also can be formed hole by bigger infringement, and in hole
Forming impurity, cause the formation connecting groove, this can produce impact to follow-up manufacture process so that shorted devices, reduces good
Rate.
Summary of the invention
It is an object of the invention to provide a kind of shallow trench isolation manufacture method, with solve in prior art formed shallow
The ropy problem of trench isolations.
For solving above-mentioned technical problem, the present invention provides the manufacture method that a kind of shallow trench is isolated, including:
Substrate is provided；
Groove is formed in described substrate；
Dielectric layer deposited in described groove, dielectric layer described in etched portions also carries out plasma to the dielectric layer after etching
Body processes；
Dielectric layer deposited performing etching and Cement Composite Treated by Plasma again, so circulation is not until existing in described dielectric layer
Seam.
Optionally, for the manufacture method of described shallow trench isolation, described Cement Composite Treated by Plasma is the one of plasma state
Nitrous oxide processes and the argon of plasma state processes.
Optionally, for the manufacture method of described shallow trench isolation, the nitrous oxide of described plasma state is processed as:
At pressure 0.65～7torr, power 50～2000w, under the atmosphere of nitrogen and/or helium, be passed through flow be 50～
The nitrous oxide of 2000sccm.
Optionally, for the manufacture method of described shallow trench isolation, the nitrous oxide of described plasma state processes and holds
The continuous time is 10～20s.
Optionally, for the manufacture method of described shallow trench isolation, the argon of described plasma state is processed as:
Under pressure 0.65～7torr, power 50～2000w, it is passed through the argon that flow is 50～2000sccm.
Optionally, for the manufacture method of described shallow trench isolation, the argon of described plasma state processes the persistent period
It is 10～20s.
Optionally, for the manufacture method of described shallow trench isolation, described plasma treatment procedure is also passed through nitrogen
One or more in gas, ammonia, hydrazine, hydrogen and oxygen.
Optionally, for the manufacture method of described shallow trench isolation, the method for described dielectric layer deposited is secondary normal for using
Pressure chemical vapor deposition technique.
Optionally, for the manufacture method of described shallow trench isolation, the method for described dielectric layer deposited is for using TEOS
And O3Reaction is formed.
Optionally, for the manufacture method of described shallow trench isolation, described cycle-index is 5～10 times.
Optionally, for the manufacture method of described shallow trench isolation, last circulation is deposited dielectric layer and
Cement Composite Treated by Plasma.
Optionally, for the manufacture method of described shallow trench isolation, described etching technics is the fluorine using plasma state
Perform etching.
Optionally, for the manufacture method of described shallow trench isolation, described substrate is formed with hard mask layer, by light
Carve and etching technics pattern described hard mask layer, and with patterning hard mask layer as mask, etch described substrate and formed recessed
Groove.
Optionally, for the manufacture method of described shallow trench isolation, described hard mask layer includes being sequentially formed in described
Pad oxide on substrate and silicon nitride layer.
Optionally, for the manufacture method of described shallow trench isolation, in described groove before dielectric layer deposited, in institute
State and on the sidewall of groove and diapire, form lining oxide layer.
Compared with prior art, in the manufacture method of the shallow trench isolation of present invention offer, use first in shallow trench
Dielectric layer deposited, carries out this cyclic process of Cement Composite Treated by Plasma, it is possible to make deposited medium afterwards to described dielectric layer
Layer is more closely knit, can reduce the wet etching rate of dielectric layer simultaneously, thus avoid the formation of seam and/or hole, also avoid
The wet-cleaning erosion to dielectric layer, is greatly improved the performance of STI, is conducive to improving performance and the yield of device.
Accompanying drawing explanation
Fig. 1 is the structural representation of the shallow trench isolation of existing technique deposit；
Fig. 2 is the flow chart of the manufacture method of the shallow trench isolation of the embodiment of the present invention；
Fig. 3～Fig. 9 be the embodiment of the present invention shallow trench isolation manufacture method during device profile schematic diagram.
Detailed description of the invention
The manufacture method of the shallow trench isolation provided the present invention below in conjunction with the drawings and specific embodiments is made the most in detail
Describe in detail bright.According to following explanation and claims, advantages and features of the invention will be apparent from.It should be noted that, accompanying drawing is equal
Use the form simplified very much, only in order to facilitate, to aid in illustrating lucidly the purpose of the embodiment of the present invention.
Refer to the device profile schematic diagram shown in flow chart that Fig. 2 provided and Fig. 3～Fig. 9.
As shown in Figure 3, it is provided that substrate 10, described substrate 10 can be such as silicon substrate, and the surface of described substrate 10 is formed
There is one layer of pad oxide 11, described pad oxide 11 is formed one layer of silicon nitride layer 12, it is possible to use chemical gaseous phase deposits
Forming described pad oxide 11 and silicon nitride layer 12 etc. mode, in preferred embodiment, the thickness of described silicon nitride layer 12 is than institute
The thickness stating pad oxide 11 is thick, and the thickness of the most described pad oxide 11 can be 50～250 angstroms, described silicon nitride layer 12
Thickness can be 500～2000 angstroms, and described pad oxide 11 and silicon nitride layer 12 are as the hard mask layer of subsequent technique.
Refer to Fig. 4, patterning described hard mask layer by photoetching process and etching technics (is pad oxidation in the present embodiment
Layer 11 and silicon nitride layer 12), described hard mask layer is formed one or more opening, carves on the basis of described opening afterwards
Lose described substrate 10, form groove 20.Then, thermal oxidation technology can be carried out, shape on the sidewall and diapire of described groove 20
Become lining oxide layer 21.
Refer to Fig. 5, carry out sub-atmospheric pressure chemical vapor deposition method (SACVD), utilize tetraethyl orthosilicate (TEOS) and smelly
Oxygen (O3) as initial action gas, dielectric layer deposited 30, such as silicon oxide thin film in described groove 20, described dielectric layer 30 covers
Cover described silicon nitride layer 12, owing to the depth-to-width ratio of groove 20 is higher, even up to 12 and more than, it is inevitably at medium
Seam 31 occur in layer 30, even have hole 32 and occur, as described in background, this problem is not if solved to cause device
Part hydraulic performance decline.
Refer to Fig. 6, etched portions dielectric layer so that the certain media layer that seam and hole exist is got rid of, this enforcement
Example uses the plasma of fluorine to perform etching.Carry out the dielectric layer 30 after plasma 40 processes described etching afterwards, be specially
First use plasma state nitrous oxide (N2O) process, then use the argon (Ar) of plasma state to process.
The nitrous oxide of wherein said plasma state is processed as: at pressure 0.65～7torr, power 50～2000w,
Nitrogen (N2) and/or the atmosphere of helium (He) under, be passed through the nitrous oxide that flow is 50～2000sccm.Described plasma state
Nitrous oxide process the persistent period be 10～20s, the present embodiment use 15s the process time.Preferably, it is also possible to be passed through
Following gas: nitrogen, ammonia (NH3), hydrazine (N2H4), hydrogen (H2) and oxygen (O2One or more in), it is clear that, above-mentioned gas
Body should also be as being plasma state.After the nitrous oxide using plasma state processes, the argon of conversion plasma state enters
Row processes.The argon of described plasma state is processed as: under pressure 0.65～7torr, power 50～2000w, is passed through flow and is
The argon of 50～2000sccm.The argon process persistent period of described plasma state is 10～20s, and the present embodiment uses 15s's
The process time.
Through above-mentioned Cement Composite Treated by Plasma, described dielectric layer 30 will become the most closely knit, can within it inject nitrogen simultaneously
(N), this wet etching rate enabling to dielectric layer 30 reduces.
Refer to Fig. 7, after a Cement Composite Treated by Plasma, continue dielectric layer deposited in the space that etching is formed,
This can adopt with the aforedescribed process, and now dielectric layer 30 there is also seam 31, and it is particularly located at Jie without Cement Composite Treated by Plasma
In matter layer, the part comprised dashed lines, but now seam will connect produced by the dielectric layer of deposit formation for the first time
Stitch little, be also not easily formed hole simultaneously, then deposit, at this, the seam 31 formed in order to eliminate, again perform etching.
Refer to Fig. 8, use same as described above performing etching containing fluoro plasma, the certain media layer comprising seam is removed.It
After, the dielectric layer after etching is carried out Cement Composite Treated by Plasma, plasma treatment procedure as above can be used.
So repeat the cyclic process of " deposit → etching → Cement Composite Treated by Plasma → deposit ... ", until no longer existing
Seam, then dielectric layer will significantly be improved, thus avoid problem stated before.Generally circulation 5～10 times, it becomes possible to
Make dielectric layer not to exist seam (the most yet there will be no hole), in order to guarantee the quality of dielectric layer, the present embodiment
In each cyclic process when carrying out Cement Composite Treated by Plasma, the nitrous oxide of described plasma state processes and the argon of plasma state
Gas disposal all processes 15s, certainly, owing to carrying out along with circulation, it is possible to takes the circumstances into consideration reduction and processes the time.
After the present embodiment circulates 6 times, obtain structure as shown in Figure 9, now dielectric layer 30 does not exist seam, have relatively
Good uniformity, consistency and relatively low wet etching rate (compare the processing method being provided without the present invention).It should be noted that
After last dielectric layer deposited, i.e. find that this dielectric layer deposited does not exist seam, avoid the need for performing etching, directly carry out
Cement Composite Treated by Plasma.
After the deposit completing dielectric layer and Cement Composite Treated by Plasma, existing flatening process, such as CMP work can be carried out
Skill, to complete the making of shallow trench isolation, this is not repeated by the application.
In the manufacture method of the shallow trench isolation that above-described embodiment provides, use first dielectric layer deposited in shallow trench, it
Afterwards described dielectric layer is carried out this cyclic process of Cement Composite Treated by Plasma, it is possible to make deposited dielectric layer more closely knit, with
Time can reduce the wet etching rate of dielectric layer, thus avoid the formation of seam and/or hole, it also avoid wet-cleaning to Jie
The erosion of matter layer, is greatly improved the performance of STI, is conducive to improving performance and the yield of device.
Obviously, those skilled in the art can carry out various change and the modification spirit without deviating from the present invention to invention
And scope.So, if the present invention these amendment and modification belong to the claims in the present invention and equivalent technologies thereof scope it
In, then the present invention is also intended to change and including modification include these.
Claims (14)
1. the manufacture method of a shallow trench isolation, it is characterised in that including:
Substrate is provided；
Groove is formed in described substrate；
Dielectric layer deposited in described groove, the dielectric layer after etching is also carried out at plasma by dielectric layer described in etched portions
Reason, described Cement Composite Treated by Plasma is that the nitrous oxide first using plasma state processes in the range of pressure 0.65～7torr, then
The argon using plasma state processes；
Dielectric layer deposited performing etching and Cement Composite Treated by Plasma again, so circulation is not until existing in described dielectric layer and connecing
Seam.
2. the manufacture method of shallow trench isolation as claimed in claim 1 a, it is characterised in that oxidation two of described plasma state
Nitrogen is processed as:
Power 50～2000w, under the atmosphere of nitrogen and/or helium, is passed through the nitrous oxide that flow is 50～2000sccm.
3. the manufacture method of shallow trench isolation as claimed in claim 2 a, it is characterised in that oxidation two of described plasma state
The nitrogen process persistent period is 10～20s.
4. the manufacture method of shallow trench isolation as claimed in claim 2, it is characterised in that the argon of described plasma state processes
For:
Under pressure 0.65～7torr, power 50～2000w, it is passed through the argon that flow is 50～2000sccm.
5. the manufacture method of shallow trench isolation as claimed in claim 4, it is characterised in that the argon of described plasma state processes
Persistent period is 10～20s.
6. the manufacture method of shallow trench isolation as claimed in claim 2, it is characterised in that in described plasma treatment procedure
Also it is passed through one or more in nitrogen, ammonia, hydrazine, hydrogen and oxygen.
7. the manufacture method of shallow trench isolation as claimed in claim 1, it is characterised in that the method for described dielectric layer deposited is
Use sub-atmospheric pressure chemical vapor deposition method.
8. the manufacture method of shallow trench isolation as claimed in claim 7, it is characterised in that the method for described dielectric layer deposited is
Use TEOS and O3Reaction is formed.
9. the manufacture method of shallow trench isolation as claimed in claim 1, it is characterised in that described cycle-index is 5～10 times.
10. the manufacture method of shallow trench isolation as claimed in claim 1, it is characterised in that form sediment in last circulation
Long-pending dielectric layer and Cement Composite Treated by Plasma.
The manufacture method of 11. shallow trench as claimed in claim 1 isolation, it is characterised in that described etching technics is employing etc.
The fluorine of ionic state performs etching.
The manufacture method of 12. shallow trench as claimed in claim 1 isolation, it is characterised in that be formed on described substrate and firmly cover
Film layer, patterns described hard mask layer by photoetching and etching technics, and with the hard mask layer of patterning as mask, etching is described
Substrate forms groove.
The manufacture method of 13. shallow trench as claimed in claim 12 isolation, it is characterised in that described hard mask layer includes successively
It is formed at the pad oxide on described substrate and silicon nitride layer.
The manufacture method of 14. shallow trench as claimed in claim 1 isolation, it is characterised in that deposit medium in described groove
Before Ceng, the sidewall and diapire of described groove form lining oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210385109.2A CN103730402B (en) | 2012-10-11 | A kind of manufacture method of shallow trench isolation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210385109.2A CN103730402B (en) | 2012-10-11 | A kind of manufacture method of shallow trench isolation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103730402A CN103730402A (en) | 2014-04-16 |
| CN103730402B true CN103730402B (en) | 2016-11-30 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752291A (en) * | 2008-12-22 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Method for making shallow groove insolation structure |
| CN102437082A (en) * | 2011-08-15 | 2012-05-02 | 上海华力微电子有限公司 | Method for improving filling performance in ultra-high depth-to-width ratio shallow trench isolation (STI) process |
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752291A (en) * | 2008-12-22 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Method for making shallow groove insolation structure |
| CN102437082A (en) * | 2011-08-15 | 2012-05-02 | 上海华力微电子有限公司 | Method for improving filling performance in ultra-high depth-to-width ratio shallow trench isolation (STI) process |
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