CN103728545A - Method for evaluating Schottky contact reliability of GaN-based device - Google Patents
Method for evaluating Schottky contact reliability of GaN-based device Download PDFInfo
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Abstract
The invention discloses a method for evaluating Schottky contact reliability of a GaN-based device. The method comprises the steps of collecting a current-voltage characteristic curve of a to-be-measured GaN-based device under different temperatures; obtaining a changing curve of a series resistor of the to-be-measured GaN-based device along with the temperature and a Schottky barrier height and ideal factor relation curve of the series resistor according to the current-voltage characteristic curve of the to-be-measured GaN-based device under the different temperatures; collecting a capacitance-voltage characteristic curve of the to-be-measured GaN-based device under different frequencies; obtaining dispersion relations of the to-be-measured GaN-based device according to the capacitance-voltage characteristic curve of the to-be-measured GaN-based device under the different frequencies; and evaluating the Schottky contact reliability of the GaN-based device according to the changing curve of the series resistor of the to-be-measured GaN-based device along with the temperature, the Schottky barrier height and ideal factor relation curve and the dispersion relations of the to-be-measured GaN-based device. The evaluating method can be used for evaluating the Schottky contact reliability of the GaN-based device.
Description
Technical field
The present invention relates to GaN base device reliability evaluation technical field, relate in particular to a kind of evaluation method of GaN base device Schottky contacts reliability.
Background technology
The advantages such as GaN material, as the material of broad-band gap, has voltage breakdown high, and saturated electron drift velocity is high, good heat stability, are with a wide range of applications in the dual-use field of high pressure, high temperature, high power device.And in the development of GaN base device, Schottky contacts is one of gordian technique.
Schottky contacts refers to when metal contacts with semiconductor material, and in interface, semi-conductive band curvature, forms Schottky barrier, thereby reach rectification characteristic.In the preparation of Schottky contacts, the good direct quality that affects Schottky contacts that the selection of metal component and semiconductor material surface are processed, the quality of its quality has directly determined the ability of regulation and control of two-dimensional electron gas (2DEG) in GaN base device raceway groove and the performance of device.
For example, if Schottky contacts is second-rate, the direction electric leakage of Schottky is excessive, not only can reduce the power of GaN base device, increases noise, also can seriously reduce the reliability of GaN base device.Therefore, after Schottky contacts completes, its q&r is carried out to effective evaluation, by being conducive to, find the defect in Schottky contacts preparation, and improve accordingly, to promote the Performance And Reliability of GaN base device.
Summary of the invention
For solving the problems of the technologies described above, the embodiment of the present invention provides a kind of evaluation method of GaN base device Schottky contacts reliability, with after Schottky contacts completes, its q&r is evaluated, thereby be conducive to find the defect in Schottky contacts preparation, and improve accordingly, to promote the Performance And Reliability of GaN base device.
For addressing the above problem, the embodiment of the present invention provides following technical scheme:
An evaluation method for GaN base device Schottky contacts reliability, described GaN base device comprises GaN based semiconductor structure and the metal construction that is positioned at described GaN based semiconductor structure surface, the method comprises:
Gather the current-voltage characteristic curve of described GaN base device to be measured under different temperatures;
Current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, obtains the resistance in series variation with temperature curve of described GaN base device to be measured and the relation curve between schottky barrier height and ideal factor thereof;
Gather the C-V characteristics of described GaN base device to be measured under different frequency;
Capacitance-voltage curve according to described GaN base device to be measured under different frequency, obtains the dispersion relation of described GaN base device to be measured;
According to the relation curve between resistance in series variation with temperature curve, schottky barrier height and the ideal factor of described GaN base device to be measured and the dispersion relation of described GaN base device to be measured, the reliability of described GaN base device Schottky contacts to be measured is evaluated.
Preferably, gathering the current-voltage characteristic curve of described GaN base device to be measured under different temperatures comprises:
GaN base device to be measured is fixed in the closed chamber of high cold probe platform;
By described high cold probe platform, the temperature of described GaN base device to be measured is adjusted to the first different preset temperatures, gather the current-voltage characteristic curve of described GaN base device to be measured under different the first preset temperatures, thereby obtain the current-voltage characteristic curve of described GaN base device to be measured under different temperatures.
Preferably, by described high cold probe platform, the temperature of described GaN base device to be measured is adjusted to the first different preset temperatures, gathers the current-voltage characteristic curve of described GaN base device to be measured under different the first preset temperatures and comprise:
By described high cold probe platform, the temperature of described GaN base device to be measured is adjusted to the first different preset temperatures;
Keep the temperature stabilization of described GaN base device to be measured after described the first preset temperature Preset Time, gather the current-voltage characteristic curve of described GaN base device to be measured under the first preset temperature, thereby obtain the current-voltage characteristic curve of described GaN base device to be measured under different the first preset temperatures.
Preferably, the scope of described the first preset temperature is-50 ℃-125 ℃, and the precision of described the first preset temperature is 0.1 ℃, and the thermograde between adjacent two the first preset temperatures is 25 ℃.
Preferably, described Preset Time is 3 minutes; The grid voltage scope of described GaN base device to be measured is-10V-2V to comprise endpoint value.
Preferably, the current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, obtains the resistance in series variation with temperature curve of described GaN base device to be measured and the relation curve between schottky barrier height and ideal factor thereof and comprises:
Current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, utilizes formula:
obtain the barrier height variation with temperature curve of Schottky in described GaN base device to be measured;
Current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, utilizes formula:
obtain the ideal factor variation with temperature curve of described GaN base device to be measured;
According to the barrier height variation with temperature curve of described GaN base device to be measured and ideal factor variation with temperature curve, obtain the barrier height of described GaN base device to be measured and the relation curve between ideal factor;
Current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, utilizes formula:
obtain the resistance in series variation with temperature curve of described GaN base device to be measured;
Wherein, Φ represents that described GaN base device to be measured is under different temperatures, the barrier height of Schottky, and A represents the area of Schottky contacts in described GaN base device to be measured, A
*represent effective Li Chade constant, R
srepresent the resistance in series of described GaN base device to be measured under different temperatures, n is the ideal factor of described GaN base device to be measured under different temperatures, current-voltage (Ig-Vg) family curve that dV/d (lnI) is obtained by test obtains through corresponding distortion, k is Boltzmann constant, T represents the temperature of described GaN base device to be measured, q represents the electron charge of Schottky contacts in described GaN base device to be measured, and I represents the current value of described GaN base device to be measured under different temperatures.
Preferably, gathering the C-V characteristics of described GaN base device to be measured under different frequency comprises:
GaN base device to be measured is fixed in the closed chamber of high cold probe platform;
By described high cold probe platform, the temperature of described GaN base device to be measured is adjusted to the second preset temperature;
Apply different predeterminated frequencies to described GaN base device to be measured, record the C-V characteristics of described GaN base device to be measured under same temperature different frequency.
Preferably, according to the relation curve between resistance in series variation with temperature curve, schottky barrier height and the ideal factor of described GaN base device to be measured and the dispersion relation of described GaN base device to be measured, the reliability evaluation of described GaN base device Schottky contacts to be measured is comprised:
According to the resistance in series variation with temperature curve of described GaN base device to be measured, judge whether the resistance in series of described GaN base device to be measured reduces along with the rising of temperature;
According to the relation curve between the schottky barrier height of described GaN base device to be measured and ideal factor, judge that whether the barrier height of described GaN base device and ideal factor be linear;
According to the curved line relation of the capacitance-voltage-frequency of described GaN base device to be measured, judge whether described GaN base device to be measured exists larger dispersion relation;
If linear between the barrier height of Schottky and the ideal factor of described GaN base device to be measured in described GaN base device to be measured, the resistance in series of described GaN base device to be measured reduces along with the rising of temperature, and there is larger dispersion relation, quality and the less stable of Schottky contacts in described GaN base device to be measured in described GaN base device to be measured.
Preferably, in the closed chamber of described high cold probe platform, be filled with nitrogen.
Compared with prior art, technique scheme has the following advantages:
The technical scheme that the embodiment of the present invention provides, by gathering current-voltage characteristic curve and the described to be measured GaN base device C-V characteristics under different frequency of described GaN base device to be measured under different temperatures, thereby the current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, obtain the resistance in series variation with temperature curve of described GaN base device to be measured and the relation curve between schottky barrier height and ideal factor thereof, and according to described GaN base device to be measured capacitance-voltage curve under different frequency, obtain the dispersion relation of described GaN base device to be measured, and then according to the resistance in series variation with temperature curve of described GaN base device to be measured, the dispersion relation of the relation curve between schottky barrier height and ideal factor and described GaN base device to be measured, reliability to described GaN base device Schottky contacts to be measured is evaluated, so that find the defect in Schottky contacts preparation, and improve accordingly, to promote the Performance And Reliability of GaN base device.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The process flow diagram of the evaluation method of the GaN base device Schottky contacts reliability that Fig. 1 provides for the embodiment of the present invention;
In the evaluation method of the GaN base device Schottky contacts reliability that Fig. 2 provides for the embodiment of the present invention, the Schottky barrier of described GaN base device to be measured, ideal factor variation with temperature curve;
In the evaluation method of the GaN base device Schottky contacts reliability that Fig. 3 provides for the embodiment of the present invention, curved line relation between the Schottky barrier of described GaN base device to be measured and ideal factor;
In the evaluation method of the GaN base device Schottky contacts reliability that Fig. 4 provides for the embodiment of the present invention, the resistance in series variation with temperature curve of described GaN base device to be measured;
In the evaluation method of the GaN base device Schottky contacts reliability that Fig. 5 provides for the embodiment of the present invention, the capacitance-voltage relation curve of described GaN base device to be measured under different frequency.
Embodiment
Just as described in the background section, after Schottky contacts completes, its q&r is carried out to effective evaluation, by being conducive to, find the defect in Schottky contacts preparation, and improve accordingly, to promote the Performance And Reliability of GaN base GaN base device.
Inventor studies discovery, in Schottky contacts actual fabrication process, because the techniques such as surface treatment are understood the quality that directly affect GaN base device Schottky contacts, also introducing surface state and interface state that inevitably can be more or less, cause the electric leakage of GaN base device excessive, power declines, and reliability reduces.Therefore, whether the metal-semiconductor interface of determining Schottky contacts Presence of an interface state, for the evaluation of Schottky contacts q&r, has directive significance.
Inventor further studies discovery, in the development process of GaN base device, conventionally adopt and measure IV(current-voltage) characteristic and CV(capacitance-voltage) method of characteristic, performance to GaN base device characterizes, and in Schottky contacts, the effect of temperature can directly affect the modulating action to channel electrons in GaN base device, and then affects the concentration of charge carrier in raceway groove.
In view of this, the embodiment of the present invention provides a kind of evaluation method of GaN base device Schottky contacts reliability, and described GaN base device comprises GaN based semiconductor structure and the metal construction that is positioned at described GaN based semiconductor structure surface, and the method comprises:
Gather the current-voltage characteristic curve of described GaN base device to be measured under different temperatures;
Current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, obtains the resistance in series variation with temperature curve of described GaN base device to be measured and the relation curve between schottky barrier height and ideal factor thereof;
Gather the C-V characteristics of described GaN base device to be measured under different frequency;
Capacitance-voltage curve according to described GaN base device to be measured under different frequency, obtains the dispersion relation of described GaN base device to be measured;
According to the relation curve between resistance in series variation with temperature curve, schottky barrier height and the ideal factor of described GaN base device to be measured and the dispersion relation of described GaN base device to be measured, the reliability of described GaN base device Schottky contacts to be measured is evaluated.
The evaluation method of utilizing the embodiment of the present invention to provide, can evaluate the q&r of Schottky contacts in described GaN base device, so that find the defect in Schottky contacts preparation, and improve accordingly, to promote the Performance And Reliability of GaN base device.
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that.Therefore the present invention is not subject to the restriction of following public concrete enforcement.
The described GaN base device to be measured of take is below described in detail the evaluation method of the GaN base device Schottky contacts reliability that the embodiment of the present invention was provided as GaN HEMT as example, the present invention does not limit this, in other embodiments of the invention, described GaN base device AlGaN HEMT to be measured or other GaN base devices, as long as described GaN base device to be measured comprises GaN based semiconductor structure and is positioned at the metal construction on described GaN based semiconductor structure surface, thereby can form Schottky contacts.
As shown in Figure 1, the GaN base device Schottky contacts method for evaluating reliability that the embodiment of the present invention provides, comprising:
Step 1: gather the current-voltage characteristic curve of described GaN base device to be measured under different temperatures.
In one embodiment of the invention, step 1 comprises:
Step 101: GaN base device to be measured is fixed in the closed chamber of high cold probe platform.In described high cold probe platform, be provided with temperature and control software, can realize the adjusting of different temperatures.In a specific embodiment of the present invention, described high cold probe platform can be realized-50 ℃ of adjustings in-200 ℃ of temperature ranges.Preferably, in the closed chamber of described high cold probe platform, be filled with nitrogen, so that described GaN base device to be measured is protected.
Step 102: by described high cold probe platform, the temperature of described GaN base device to be measured is adjusted to the first different preset temperatures, gather the current-voltage characteristic curve of described GaN base device to be measured under different the first preset temperatures, thereby obtain the current-voltage characteristic curve of described GaN base device to be measured under different temperatures.
Concrete, step 102 comprises:
By described high cold probe platform, the temperature of described GaN base device to be measured is adjusted to the first different preset temperatures;
Keep the temperature stabilization of described GaN base device to be measured after described the first preset temperature Preset Time, gather the current-voltage characteristic curve of described GaN base device to be measured under the first preset temperature, thereby obtain the current-voltage characteristic curve of described GaN base device to be measured under different the first preset temperatures, can obtain the current-voltage characteristic curve of described GaN base device to be measured under different temperatures.
In a specific embodiment of the present invention, keep the temperature stabilization of described GaN base device to be measured after described the first preset temperature Preset Time, utilize the HP4122 of Hewlett-Packard to test the I-E characteristic of described GaN base device to be measured, and utilize data acquisition software to gather the current-voltage characteristic curve of described GaN base device to be measured under the first preset temperature, thereby obtain the current-voltage characteristic curve of described GaN base device to be measured under different the first preset temperatures.
Preferably, the scope of described the first preset temperature is-50 ℃-125 ℃, the precision of described the first preset temperature is 0.1 ℃, and the thermograde between adjacent two the first preset temperatures is 25 ℃, be that described the first preset temperature is followed successively by :-50 ℃ ,-25 ℃, 0 ℃, 25 ℃, 50 ℃, 75 ℃, 100 ℃, 125 ℃, in other embodiments of the invention, the scope of described the first preset temperature, precision and thermograde can also be other numerical value, the present invention does not limit this, specifically depends on the circumstances.
Preferred, described Preset Time is 3 minutes; The grid voltage scope of described GaN base device to be measured is-10V-2V comprise endpoint value, but the present invention not to limit equally to this.
Step 2: obtain described GaN base device to be measured after the current-voltage characteristic curve under different temperatures, current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, obtains the resistance in series variation with temperature curve of described GaN base device to be measured and the relation curve between schottky barrier height and ideal factor thereof.
In one embodiment of the invention, step 2 comprises:
Step 201: the current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, utilizes formula:
obtain the barrier height variation with temperature curve of Schottky in described GaN base device to be measured, as shown in Figure 2.
Wherein, Φ represents that described GaN base device to be measured is under different temperatures, the barrier height of Schottky; A represents the area of Schottky contacts in described GaN base device to be measured; A
*represent effective Li Chade constant (non-doped with Al
0.22ga
0.78the Li Chade constant that N is corresponding is 33.11A/cm
2k
2); T represents the temperature of described GaN base device to be measured; Q represents the electron charge of Schottky contacts in described GaN base device to be measured; I represents the current value of described GaN base device to be measured under different temperatures; K is Boltzmann constant.
Step 202: the current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, utilizes formula:
obtain the ideal factor variation with temperature curve of described GaN base device to be measured, as shown in Figure 2.
Wherein, n represents the ideal factor of described GaN base device to be measured under different temperatures; Current-voltage (Ig-Vg) family curve that dV/d (lnI) is obtained by test obtains through corresponding distortion; K is Boltzmann constant; T represents the temperature of described GaN base device to be measured; Q represents the electron charge of Schottky contacts in described GaN base device to be measured.
Step 203: according to the barrier height variation with temperature curve of described GaN base device to be measured and ideal factor variation with temperature curve, obtain the barrier height of described GaN base device to be measured and the relation curve between ideal factor.
In one embodiment of the invention, utilize the method for origin Mathematical Fitting, barrier height under different temperatures and ideal factor are carried out to linear fit, obtain the barrier height of described GaN base device to be measured and the relation curve between ideal factor, as shown in Figure 3.
Step 204: the current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, utilizes formula:
obtain the resistance in series variation with temperature curve of described GaN base device to be measured, as shown in Figure 4.
Wherein, R
srepresent the resistance in series of described GaN base device to be measured under different temperatures; Current-voltage (Ig-Vg) family curve that dV/d (lnI) is obtained by test obtains through corresponding distortion; K is Boltzmann constant; T represents the temperature of described GaN base device to be measured; Q represents the electron charge of Schottky contacts in described GaN base device to be measured; N is the ideal factor of described GaN base device to be measured under different temperatures; I represents the current value of described GaN base device to be measured under different temperatures.
Step 3: gather the C-V characteristics of described GaN base device to be measured under different frequency.
In one embodiment of the invention, step 3 comprises:
Step 301: GaN base device to be measured is fixed in the closed chamber of high cold probe platform.
Step 302: the temperature of described GaN base device to be measured is adjusted to the second preset temperature by described high cold probe platform.
Step 303: apply different predeterminated frequencies to described GaN base device to be measured, record the C-V characteristics of described GaN base device to be measured under same temperature different frequency, as shown in Figure 5.
In a specific embodiment of the present invention, described the second preset temperature is 398K, described predeterminated frequency is followed successively by: 10KHz, 50KHz, 100kHz and 1MHz, the grid voltage scope of described GaN base device to be measured is-10V-2V, comprise endpoint value, but the present invention does not limit equally to this, in other embodiments of the invention, the grid voltage span of described the second preset temperature, described predeterminated frequency and described GaN base device to be measured can also be chosen other values.
Step 4: the capacitance-voltage curve according to described GaN base device to be measured under different frequency, obtains the curved line relation of the capacitance-voltage-frequency of described GaN base device to be measured.
Step 5: according to the relation curve between resistance in series variation with temperature curve, schottky barrier height and the ideal factor of described GaN base device to be measured and the dispersion relation of described GaN base device to be measured, the reliability of described GaN base device Schottky contacts to be measured is evaluated.
In one embodiment of the invention, step 5 comprises:
Step 501: according in the relation curve between the barrier height of described GaN base device to be measured and ideal factor, judge that whether the barrier height of described GaN base device and ideal factor be linear;
Step 502: according to the resistance in series variation with temperature curve of described GaN base device to be measured, judge whether the resistance in series of described GaN base device to be measured reduces along with the rising of temperature;
Step 503: according to the curved line relation of the capacitance-voltage-frequency of described GaN base device to be measured, judge whether described GaN base device to be measured exists larger dispersion relation.
If in step 501-503, linear between the barrier height of Schottky and the ideal factor of described GaN base device to be measured in described GaN base device to be measured, the resistance in series of described GaN base device to be measured reduces along with the rising of temperature, and there is larger dispersion relation in described GaN base device to be measured, there is situation pockety in the barrier height that Schottky in described GaN base device to be measured is described, and between the metal construction in described GaN base device to be measured and semiconductor structure, it is Schottky contacts interface, there is larger interface state, quality and the less stable of Schottky contacts in described GaN base device to be measured.
In this instructions, various piece adopts the mode go forward one by one to describe, and each part stresses is the difference with other parts, between various piece identical similar part mutually referring to.
Above-mentioned explanation to the disclosed embodiments, makes professional and technical personnel in the field can realize or use the present invention.To the multiple modification of these embodiment, will be apparent for those skilled in the art, General Principle as defined herein can, in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to embodiment illustrated herein, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (9)
1. an evaluation method for GaN base device Schottky contacts reliability, described GaN base device comprises GaN based semiconductor structure and is positioned at the metal construction on described GaN based semiconductor structure surface, it is characterized in that, the method comprises:
Gather the current-voltage characteristic curve of described GaN base device to be measured under different temperatures;
Current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, obtains the resistance in series variation with temperature curve of described GaN base device to be measured and the relation curve between schottky barrier height and ideal factor thereof;
Gather the C-V characteristics of described GaN base device to be measured under different frequency;
Capacitance-voltage curve according to described GaN base device to be measured under different frequency, obtains the dispersion relation of described GaN base device to be measured;
According to the relation curve between resistance in series variation with temperature curve, schottky barrier height and the ideal factor of described GaN base device to be measured and the dispersion relation of described GaN base device to be measured, the reliability of described GaN base device Schottky contacts to be measured is evaluated.
2. evaluation method according to claim 1, is characterized in that, gathers the current-voltage characteristic curve of described GaN base device to be measured under different temperatures and comprises:
GaN base device to be measured is fixed in the closed chamber of high cold probe platform;
By described high cold probe platform, the temperature of described GaN base device to be measured is adjusted to the first different preset temperatures, gather the current-voltage characteristic curve of described GaN base device to be measured under different the first preset temperatures, thereby obtain the current-voltage characteristic curve of described GaN base device to be measured under different temperatures.
3. evaluation method according to claim 2, it is characterized in that, by described high cold probe platform, the temperature of described GaN base device to be measured is adjusted to the first different preset temperatures, gathers the current-voltage characteristic curve of described GaN base device to be measured under different the first preset temperatures and comprise:
By described high cold probe platform, the temperature of described GaN base device to be measured is adjusted to the first different preset temperatures;
Keep the temperature stabilization of described GaN base device to be measured after described the first preset temperature Preset Time, gather the current-voltage characteristic curve of described GaN base device to be measured under the first preset temperature, thereby obtain the current-voltage characteristic curve of described GaN base device to be measured under different the first preset temperatures.
4. according to the evaluation method described in claim 2 or 3, it is characterized in that, the scope of described the first preset temperature is-50 ℃-125 ℃, and the precision of described the first preset temperature is 0.1 ℃, and the thermograde between adjacent two the first preset temperatures is 25 ℃.
5. evaluation method according to claim 4, is characterized in that, described Preset Time is 3 minutes; The grid voltage scope of described GaN base device to be measured is-10V-2V to comprise endpoint value.
6. evaluation method according to claim 1, it is characterized in that, current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, obtains the resistance in series variation with temperature curve of described GaN base device to be measured and the relation curve between schottky barrier height and ideal factor thereof and comprises:
Current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, utilizes formula:
obtain the barrier height variation with temperature curve of Schottky in described GaN base device to be measured;
Current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, utilizes formula:
obtain the ideal factor variation with temperature curve of described GaN base device to be measured;
According to the barrier height variation with temperature curve of described GaN base device to be measured and ideal factor variation with temperature curve, obtain the barrier height of described GaN base device to be measured and the relation curve between ideal factor;
Current-voltage characteristic curve according to described GaN base device to be measured under different temperatures, utilizes formula:
obtain the resistance in series variation with temperature curve of described GaN base device to be measured;
Wherein, Φ represents that described GaN base device to be measured is under different temperatures, the barrier height of Schottky, and A represents the area of Schottky contacts in described GaN base device to be measured, A
*represent effective Li Chade constant, R
srepresent the resistance in series of described GaN base device to be measured under different temperatures, n is the ideal factor of described GaN base device to be measured under different temperatures, current-voltage (Ig-Vg) family curve that dV/d (lnI) is obtained by test obtains through corresponding distortion, k is Boltzmann constant, T represents the temperature of described GaN base device to be measured, q represents the electron charge of Schottky contacts in described GaN base device to be measured, and I represents the current value of described GaN base device to be measured under different temperatures.
7. evaluation method according to claim 1, is characterized in that, gathers the C-V characteristics of described GaN base device to be measured under different frequency and comprises:
GaN base device to be measured is fixed in the closed chamber of high cold probe platform;
By described high cold probe platform, the temperature of described GaN base device to be measured is adjusted to the second preset temperature;
Apply different predeterminated frequencies to described GaN base device to be measured, record the C-V characteristics of described GaN base device to be measured under same temperature different frequency.
8. evaluation method according to claim 1, it is characterized in that, according to the relation curve between resistance in series variation with temperature curve, schottky barrier height and the ideal factor of described GaN base device to be measured and the dispersion relation of described GaN base device to be measured, the reliability evaluation of described GaN base device Schottky contacts to be measured is comprised:
According to the resistance in series variation with temperature curve of described GaN base device to be measured, judge whether the resistance in series of described GaN base device to be measured reduces along with the rising of temperature;
According to the relation curve between the schottky barrier height of described GaN base device to be measured and ideal factor, judge that whether the barrier height of described GaN base device and ideal factor be linear;
According to the curved line relation of the capacitance-voltage-frequency of described GaN base device to be measured, judge whether described GaN base device to be measured exists larger dispersion relation;
If linear between the barrier height of Schottky and the ideal factor of described GaN base device to be measured in described GaN base device to be measured, the resistance in series of described GaN base device to be measured reduces along with the rising of temperature, and there is larger dispersion relation, quality and the less stable of Schottky contacts in described GaN base device to be measured in described GaN base device to be measured.
9. evaluation method according to claim 1, is characterized in that, in the closed chamber of described high cold probe platform, is filled with nitrogen.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109946577A (en) * | 2019-01-31 | 2019-06-28 | 西安电子科技大学 | A kind of test method of GaN device electric stress reliability |
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