CN103717048A - Wave-absorbing material - Google Patents
Wave-absorbing material Download PDFInfo
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- CN103717048A CN103717048A CN201210374654.1A CN201210374654A CN103717048A CN 103717048 A CN103717048 A CN 103717048A CN 201210374654 A CN201210374654 A CN 201210374654A CN 103717048 A CN103717048 A CN 103717048A
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Abstract
The invention discloses a wave-absorbing material which includes a first resistive-capacitive mixing layer and a second resistive-capacitive mixing layer, which are arranged at the front of a target object, wherein the first resistive-capacitive mixing layer and the second resistive-capacitive mixing layer are identical in structure and different in material. The first resistive-capacitive mixing layer is comprised of a plurality of unit structures which include first, second, third and forth basic units. Each first basic unit includes a first branch, and a second branch and a third branch, which extend upwards vertically from the two ends of the first branch. A plurality of forth branches are also arrayed between each second branch and third branch in equal interval. After the first basic units are rotated for 90, 180 and 270 degrees, the second to forth basic units are obtained. Through arrangement of the resistive-capacitive mixing layers of special structures, the wave-absorbing material is capable of achieving an effect of broadband and efficient electromagnetic-wave absorption. The wave-absorbing material is simple in structure and lower in thickness and S11 parameter values of the wave-absorbing material are all below -15dB within a frequency band of 13GHz to 50 GHz.
Description
Technical field
The present invention relates to material technology field, relate in particular to a kind of absorbing material.
Background technology
Along with making rapid progress of scientific technological advance, the various technology that the electromagnetic wave of take is medium and product are more and more, and electromagenetic wave radiation also increases day by day on the impact of environment.Such as, radio wave may cause interference to airport environment, causes airplane flight normally to take off; Mobile phone may disturb the work of various precise electronic medicine equipments; Even common computer, electromagnetic wave that also can radiation carry information, it is may be beyond several kilometers received and reappear, and cause the leakage of the aspect information such as national defence, politics, economy, science and technology.Therefore, administer electromagnetic pollution, find a kind of material---the absorbing material that can keep out and weaken electromagenetic wave radiation, become a large problem of material science.
Absorbing material is a class material that can absorb the electromagnetic wave energy that projects its surface, and it is comprising that military affairs and other side are also widely used, such as stealthy machine, contact clothing etc.The primary condition of material electromagnetic wave absorption is: when (1) electromagnetic wave incides on material, it can enter material internal to greatest extent, requires material to have matching properties; (2) the electromagnetism wave energy that enters material internal promptly almost all attenuates, i.e. attenuation characteristic.
Existing absorbing material utilizes each material self to electromagnetic absorbent properties, component by design different materials makes mixed material possess microwave absorbing property, this type of design of material is complicated and do not have a large-scale promotion, the mechanical performance of this type of material is limited to the mechanical performance of material itself simultaneously, can not meet the demand of special occasions.
Summary of the invention
Technical problem to be solved by this invention is, for the above-mentioned deficiency of prior art, proposes a kind of absorbing material that ripple frequency range is wider, absorbing property is good of inhaling.
The present invention solves the technical scheme that its technical problem adopts, and proposes a kind of absorbing material, and it comprises the first capacitance resistance mixed layer and the second capacitance resistance mixed layer that is arranged at target object the place ahead; Described the first capacitance resistance mixed layer is identical with the second capacitance resistance mixed layer structure, material is different; Described the first capacitance resistance mixed layer consists of a plurality of cellular constructions, described cellular construction comprises first, second, third, fourth elementary cell, the first elementary cell comprises the first branch and from the first branch two ends, make progress vertically extending the second branch and San branch, equally spacedly between the second branch and San branch is placed with many Si branches; The first elementary cell is branched into rotating shaft with second to turn clockwise 90 ° and obtains the second elementary cell, the second elementary cell is branched into rotating shaft with second unit second and turn clockwise 90 ° and obtain the 3rd elementary cell, the 3rd elementary cell is branched into rotating shaft with the 3rd elementary cell second and turn clockwise 90 ° and obtain the 4th elementary cell; During by the first elementary cell to the four elementary unit groups synthesis unit structure, first elementary cell the second branch overlaps with second elementary cell the first branch, second elementary cell the second branch overlaps with the 3rd elementary cell the first branch, the 3rd elementary cell the second branch overlaps with the 4th elementary cell the first branch, and the 4th elementary cell the second branch overlaps with first elementary cell the first branch.
Further, described a plurality of cellular construction is combined into the first capacitance resistance mixed layer in the following way: the branch of the first elementary cell of cellular construction inserts in the gap that the 3rd elementary cell contiguous branch of adjacent cellular construction forms non-contiguously, and the branch of the second elementary cell of cellular construction inserts in the gap that the 4th elementary cell contiguous branch of adjacent cellular construction forms non-contiguously.
Further, on the first capacitance resistance mixed layer and the second capacitance resistance mixed layer, the length of all branches, width and thickness are all equal, and the spacing of contiguous branch is equal to branch's width.
Further, the width of each branch is 0.05 to 0.15 millimeter, and each branch's thickness is 0.015 to 0.025 millimeter.
Further, described the first capacitance resistance mixed layer equates with the spacing of target object with spacing and the second capacitance resistance mixed layer of the second capacitance resistance mixed layer.
Further, the spacing of described the first capacitance resistance mixed layer and the second capacitance resistance mixed layer is 1-3 millimeter.
Further, between described the first capacitance resistance mixed layer and the second capacitance resistance mixed layer and between the second capacitance resistance mixed layer and target object, be filled with air or for vacuum.
Further, the square resistance of described the first capacitance resistance mixed layer is 150 to 180 ohm.
Further, the square resistance of described the second capacitance resistance mixed layer is 30 to 50 ohm.
Further, equally spaced 3 the Si branches that arrange between described the second branch and San branch.
The present invention, by the capacitance resistance mixed layer of special construction is set, can reach wideband, the electromagnetic effect of efficient absorption.Absorbing material of the present invention is simple in structure, thinner thickness, and in 13GHZ to 50GHZ frequency range, the S11 parameter value of absorbing material is-below 15dB.
Accompanying drawing explanation
Fig. 1 is the structural representation of absorbing material of the present invention;
Cellular construction and decomposing schematic representation thereof on Fig. 2 the first capacitance resistance mixed layer;
Fig. 3 is that cellular construction shown in a plurality of Fig. 2 is arranged the structural representation that forms the first capacitance resistance mixed layer;
Fig. 4 is the simulation result schematic diagram of absorbing material of the present invention.
Embodiment
Please refer to Fig. 1, the structural representation that Fig. 1 is absorbing material of the present invention.Thereby the present invention realizes wideband, efficient absorption electromagnetic wave effect by the first capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 are set before target object.In Fig. 1, target object adopts sheet metal 300 to represent, during practical application, target object can be all kinds of objects with metal surface, such as aircraft, radar etc., when target object does not have metal surface when practical application, can attach metal level on target object surface.
In the present invention, the first capacitance resistance mixed layer 100 is identical with the structure of the second capacitance resistance mixed layer 200, and the first capacitance resistance mixed layer 100 equates with the spacing of target object 300 with spacing and the second capacitance resistance mixed layer 200 of the second capacitance resistance mixed layer 200.Preferably, the spacing of the first capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 is 1-3 millimeter.Between the first capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 and between the second capacitance resistance mixed layer 200 and target object 300, can fill air, also can be vacuum.
Please refer to Fig. 2, Fig. 3.Fig. 2 is cellular construction and decomposing schematic representation thereof on the first capacitance resistance mixed layer 100, and Fig. 3 is that cellular construction shown in a plurality of Fig. 2 is arranged the structural representation that forms the first capacitance resistance mixed layer.In Fig. 2 and Fig. 3, the material of the first capacitance resistance mixed layer self has certain resistance value, and in the present embodiment, the square resistance of the first capacitance resistance mixed layer is preferably 30-50 ohm.In the first capacitance resistance mixed layer, adjacent branch can be equivalent to electric capacity under electromagnetic effect, thereby has formed capacitance resistance mixed layer.Arranging of the first capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 meets transmission line theory, thereby can realize wideband, efficient wave-absorbing effect by adjusting square resistance and the equivalent capacity of capacitance resistance mixed layer.Transmission line theory can reference papers: Kazemzadeh and A.Karlsson, MultilayeredWideband Absorbers for Oblique Angle of Incidence, IEEE Trans.Antennas Propag., Vol58,3637-3646, (2010).
In Fig. 2, the first capacitance resistance mixed layer cellular construction comprises first, second, third, fourth elementary cell, the first elementary cell comprises the first branch 10 and from the first branch 10 two ends, makes progress between vertically extending the second branch 11 and 12, the second branches 11 of San branch and San branch 12 and is also equally spacedly placed with many Si branches 13.In the present embodiment, equally spacedly between the second branch 11 and San branch 12 be placed with three Si branches 13.In the first elementary cell, the length of Ge Tiao branch, width and thickness all equate.
The first elementary cell be take to the second branch 11 and as rotating shaft turns clockwise 90 °, obtain the second elementary cell, the second elementary cell be take to second unit the second branch 11 ' obtain the 3rd elementary cell as rotating shaft turns clockwise 90 °, the 3rd elementary cell be take to the 3rd elementary cell the second branch 11 and " as rotating shaft turns clockwise 90 °, obtain the 4th elementary cell.When the first elementary cell to the four elementary cells are combined into the first capacitance resistance mixed layer cellular construction, first elementary cell the second branch 11 and second elementary cell the first branch 10 ' overlap, second elementary cell the second branch 11 ' and the 3rd elementary cell the first branch 10 " overlap; the 3rd elementary cell the second branch 11 " with the 4th elementary cell the first branch 10 " ' overlap, the 4th elementary cell the second branch 11 " ' overlap with first elementary cell the first branch 10.
In Fig. 3, cellular construction shown in a plurality of Fig. 2 combines in the following way: the branch of the first elementary cell of cellular construction inserts in the gap that the 3rd elementary cell contiguous branch of adjacent cellular construction forms non-contiguously, and the branch of the second elementary cell of cellular construction inserts in the gap that the 4th elementary cell contiguous branch of adjacent cellular construction forms non-contiguously.Preferably, on the first capacitance resistance mixed layer, between adjacent branch, spacing equates, the spacing between adjacent branch is identical with branch width.In the present embodiment, the width of each branch is 0.05 to 0.15 millimeter, and each branch's thickness is 0.015 to 0.025 millimeter.
The difference part of the second capacitance resistance mixed layer and the first capacitance resistance mixed layer is only, forms the material difference of the branch of the second capacitance resistance mixed layer, thereby causes the first capacitance resistance mixed layer different with the square resistance of the second capacitance resistance mixed layer.Wherein, the square resistance that the first capacitance resistance mixes is once preferably 150 to 180 ohm, and the second capacitance resistance mixed layer upper block resistance value is preferably 30 to 50 ohm.
Utilize the wave-absorbing effect of CST simulation software diplomatic copy invention absorbing material, its simulation result figure as shown in Figure 4, as shown in Figure 4, in 13GHZ to 50GHZ frequency range, the S11 parameter value of absorbing material of the present invention is-below 15dB, there is good wideband wave-absorbing effect.
Can imagine ground, quantity that can be by changing Si branch, to change the equivalent capacitance value of first, second capacitance resistance mixed layer, also can change the absorbing material absorbent electromagnetic frequency range of institute of the present invention and wave-absorbing effect by the spacing changing between first, second capacitance resistance mixed layer and target object.
By reference to the accompanying drawings embodiments of the invention are described above; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; rather than restrictive; those of ordinary skill in the art is under enlightenment of the present invention; not departing from the scope situation that aim of the present invention and claim protect, also can make a lot of forms, within these all belong to protection of the present invention.
Claims (10)
1. an absorbing material, is characterized in that: comprise the first capacitance resistance mixed layer and the second capacitance resistance mixed layer that are arranged at target object the place ahead; Described the first capacitance resistance mixed layer is identical with the second capacitance resistance mixed layer structure, material is different; Described the first capacitance resistance mixed layer consists of a plurality of cellular constructions, described cellular construction comprises first, second, third, fourth elementary cell, the first elementary cell comprises the first branch and from the first branch two ends, make progress vertically extending the second branch and San branch, equally spacedly between the second branch and San branch is placed with many Si branches; The first elementary cell is branched into rotating shaft with second to turn clockwise 90 ° and obtains the second elementary cell, the second elementary cell is branched into rotating shaft with second unit second and turn clockwise 90 ° and obtain the 3rd elementary cell, the 3rd elementary cell is branched into rotating shaft with the 3rd elementary cell second and turn clockwise 90 ° and obtain the 4th elementary cell; During by the first elementary cell to the four elementary unit groups synthesis unit structure, first elementary cell the second branch overlaps with second elementary cell the first branch, second elementary cell the second branch overlaps with the 3rd elementary cell the first branch, the 3rd elementary cell the second branch overlaps with the 4th elementary cell the first branch, and the 4th elementary cell the second branch overlaps with first elementary cell the first branch.
2. absorbing material as claimed in claim 1, it is characterized in that: described a plurality of cellular constructions are combined into the first capacitance resistance mixed layer in the following way: the branch of the first elementary cell of cellular construction inserts in the gap that the 3rd elementary cell contiguous branch of adjacent cellular construction forms non-contiguously, the branch of the second elementary cell of cellular construction inserts in the gap that the 4th elementary cell contiguous branch of adjacent cellular construction forms non-contiguously.
3. absorbing material as claimed in claim 2, is characterized in that: on the first capacitance resistance mixed layer and the second capacitance resistance mixed layer, the length of all branches, width and thickness are all equal, and the spacing of contiguous branch is equal to branch's width.
4. absorbing material as claimed in claim 3, is characterized in that: the width of each branch is 0.05 to 0.15 millimeter, and each branch's thickness is 0.015 to 0.025 millimeter.
5. absorbing material as claimed in claim 1, is characterized in that: described the first capacitance resistance mixed layer equates with the spacing of target object with spacing and the second capacitance resistance mixed layer of the second capacitance resistance mixed layer.
6. absorbing material as claimed in claim 5, is characterized in that: the spacing of described the first capacitance resistance mixed layer and the second capacitance resistance mixed layer is 1-3 millimeter.
7. absorbing material as claimed in claim 5, is characterized in that: between described the first capacitance resistance mixed layer and the second capacitance resistance mixed layer and between the second capacitance resistance mixed layer and target object, be filled with air or be vacuum.
8. absorbing material as claimed in claim 1, is characterized in that: the square resistance of described the first capacitance resistance mixed layer is 150 to 180 ohm.
9. the absorbing material as described in claim 1 or 8, is characterized in that: the square resistance of described the second capacitance resistance mixed layer is 30 to 50 ohm.
10. absorbing material as claimed in claim 1, is characterized in that: equally spaced 3 the Si branches that arrange between described the second branch and San branch.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210374654.1A CN103717048B (en) | 2012-09-29 | 2012-09-29 | A kind of absorbing material |
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| CN201210374654.1A CN103717048B (en) | 2012-09-29 | 2012-09-29 | A kind of absorbing material |
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| CN103717048A true CN103717048A (en) | 2014-04-09 |
| CN103717048B CN103717048B (en) | 2017-11-28 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001032231A (en) * | 1999-07-23 | 2001-02-06 | Soken Kogyo Kk | Lattice type installation material, wave absorbing structure using it, hume pipe used for the structure, and construction method of wave absorbing structure |
| CN102637960A (en) * | 2012-04-13 | 2012-08-15 | 深圳光启创新技术有限公司 | Flexible film based on artificial micro-structure |
| CN102682858A (en) * | 2011-03-15 | 2012-09-19 | 深圳光启高等理工研究院 | Wave-absorbing material |
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- 2012-09-29 CN CN201210374654.1A patent/CN103717048B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001032231A (en) * | 1999-07-23 | 2001-02-06 | Soken Kogyo Kk | Lattice type installation material, wave absorbing structure using it, hume pipe used for the structure, and construction method of wave absorbing structure |
| CN102682858A (en) * | 2011-03-15 | 2012-09-19 | 深圳光启高等理工研究院 | Wave-absorbing material |
| CN102637960A (en) * | 2012-04-13 | 2012-08-15 | 深圳光启创新技术有限公司 | Flexible film based on artificial micro-structure |
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Effective date of registration: 20210408 Address after: 2 / F, software building, No.9, Gaoxin Zhongyi Road, Nanshan District, Shenzhen City, Guangdong Province Patentee after: KUANG-CHI INSTITUTE OF ADVANCED TECHNOLOGY Address before: 18B, building a, CIC international business center, 1061 Xiangmei Road, Futian District, Shenzhen, Guangdong 518034 Patentee before: KUANG-CHI INNOVATIVE TECHNOLOGY Ltd. |