CN103715276A - Solar cell and module thereof - Google Patents
Solar cell and module thereof Download PDFInfo
- Publication number
- CN103715276A CN103715276A CN201210371674.3A CN201210371674A CN103715276A CN 103715276 A CN103715276 A CN 103715276A CN 201210371674 A CN201210371674 A CN 201210371674A CN 103715276 A CN103715276 A CN 103715276A
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- layer
- solar cell
- reflectance coating
- refractive index
- electrode
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- 239000000463 material Substances 0.000 claims abstract description 58
- 238000002161 passivation Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000000576 coating method Methods 0.000 claims description 72
- 239000011248 coating agent Substances 0.000 claims description 64
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 76
- 239000011241 protective layer Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Abstract
The invention provides a solar cell and a module thereof. The cell comprises a substrate which comprises a first side, a passivation layer which is configured on the first side, a number of transparent reflecting films, and a number of first electrodes which pass through the reflecting films and the passivation layer to contact the first side. A number of transparent reflecting films are sequentially stacked and configured on the passivation layer. Each reflecting film comprises a first layer and a second layer. The first layer and the second layer of each reflecting film have different refractive indexes. The material of the second layer of each reflecting film is different from the material of the passivation layer. According to the invention, through the reflecting films, a light from the substrate is reflected back into the substrate, and is absorbed and used again, thus the quantum efficiency of the cell in a light band of long wavelength is improved; short-circuit current is increased; and the conversion efficiency of the cell is improved.
Description
Technical field
The present invention relates to a kind of battery and battery modules, particularly relate to a kind of solar cell and solar cell module.
Background technology
In known silicon wafer solar cell, due to the material behavior of silicon, lower for the absorptivity of the longer light of wavelength (more than being about 800nm), make this part of light after entering battery, cannot fully be absorbed, and easily from the back of the body surface of battery, departed from.Although being subject to the formed metal back electrode of metal paste, the back of the body of battery surface covers, this metal back electrode is helpful by the back of the body surface disengaging of battery for stoping long wavelength's light, but for fear of having an even surface and single metal level design of metal back electrode itself, part long wavelength light will be absorbed in inside battery back electrode place, all the other long wavelength lights are also limited in the reflecting effect of inside battery, therefore most long wavelength light still cannot effectively reflect back into inside battery and absorbs, cause battery to reduce in the quantum efficiency of this wave band, thereby affect the photoelectric conversion efficiency of battery.
Summary of the invention
The object of the present invention is to provide a kind ofly can promote light reflecting effect, to increase solar cell and the module thereof of absorptivity and conversion efficiency.
Solar cell of the present invention, comprises: one comprises the substrate of a first surface, a reflectance coating that is disposed at the passivation layer on this first surface, a plurality of light-permeables and a plurality of the first electrode.The reflectance coating of the plurality of light-permeable sequentially stack arrangement on this passivation layer, each reflectance coating comprises a ground floor, and one with respect to this ground floor the second layer away from this passivation layer, this ground floor of each reflectance coating is different from the refractive index of this second layer, and the material of the second layer of each reflectance coating is different from the material of this passivation layer; The plurality of the first electrode contacts with this first surface through the plurality of reflectance coating and this passivation layer.
Solar cell of the present invention, the material of this passivation layer is aluminium oxide, silicon dioxide, silica, silicon nitride or amorphous silicon.
Solar cell of the present invention, the material of this passivation layer is different from the material of this ground floor of this reflectance coating of adjacency.
Solar cell of the present invention, the refractive index of the ground floor of the plurality of reflectance coating differs from one another.
Solar cell of the present invention, the refractive index of the second layer of the plurality of reflectance coating differs from one another.
Solar cell of the present invention, at least one in the plurality of reflectance coating has between this ground floor and this second layer the 3rd layer, and the refractive index of the 3rd layer is different from the refractive index of this ground floor and the refractive index of this second layer.
Solar cell of the present invention, the group that the material of each reflectance coating selects free silicon nitride, silica, amorphous silicon, titanium oxide to form.
Solar cell of the present invention, the refractive index of the refractive index of this ground floor in each reflectance coating, the refractive index of the 3rd layer and this second layer from high to low sequentially.
Solar cell of the present invention, also comprises second electrode being positioned on the plurality of reflectance coating, and the plurality of the first electrode is electrically connected to by this second electrode to each other.
Solar cell module of the present invention, comprises: first sheet material being oppositely arranged and second sheet material, encapsulation material and an a plurality of solar cell described above being positioned between this first sheet material and this second sheet material.The plurality of solar cell is connected and is arranged between this first sheet material and this second sheet material; This encapsulation material is coated on around the plurality of solar cell.
Beneficial effect of the present invention is: by the plurality of reflectance coating, the light reflection coming by this substrate is got back to this substrate inside and absorb once again, especially can promote the reflection of long wavelength's light and absorption rate again, thereby improve battery in the quantum efficiency of the longer optical band of wavelength, to increase the conversion efficiency of short circuit current, lifting battery.
Accompanying drawing explanation
Fig. 1 is the partial schematic sectional view of one first preferred embodiment of solar cell module of the present invention.
Fig. 2 is the side-looking cross-sectional schematic of a solar cell of this first preferred embodiment.
Fig. 3 is the local amplification view of the solar cell of this first preferred embodiment.
Fig. 4 is a local amplification view, shows a solar cell of one second preferred embodiment of solar cell module of the present invention.
Fig. 5 be a light reflectivity corresponding to the graph of a relation of lambda1-wavelength, in figure, show the experimental result of a comparative example and experimental example of the present invention 1 ~ 4.
Fig. 6 be an absorptivity corresponding to the graph of a relation of lambda1-wavelength, in figure, show the experimental result of this comparative example and this experimental example 1 ~ 4 of the present invention.
Fig. 7 is the schematic rear view of a part, shows a solar cell of one the 3rd preferred embodiment of solar cell module of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail, is noted that in the following description content, and similarly element is to represent with identical numbering.
Consult Fig. 1, Fig. 2, Fig. 3, the first preferred embodiment of solar cell module of the present invention comprises: one first sheet material 1 being oppositely arranged up and down and one second sheet material 2, be a plurality ofly connected and be arranged in the solar cell 3 of 2 of this first sheet material 1 and this second sheet materials and be at least onely positioned at 2 of this first sheet material 1 and this second sheet materials, and being coated on the plurality of solar cell 3 encapsulation material 4 around.
This first sheet material 1 is not particularly limited on the implementation with this second sheet material 2, can use glass or plastic sheet, and the sheet material that is positioned at a side of battery sensitive surface is necessary for light-permeable.The material of this encapsulation material 4 is the ethylene-vinyl acetate copolymer of light-permeable (EVA) for example.
The plurality of solar cell 3 is electrically connected to by the unshowned welding lead of figure (ribbon).The structure of the plurality of solar cell 3 is all identical, below only take that one of them describes as example.
This solar cell 3 comprises: the reflectance coating 33 of a substrate 31, a passivation layer 32, a plurality of light-permeables, a protective layer 34, a plurality of the first electrode 35, and one second electrode 36.
This substrate 31 comprises a contrary first surface 311 and one second 312, and this first surface 311 is the back side, and this second 312 is sensitive surface.These second 312 place of this substrate 31 form an emitter layer 313, and this substrate 31 is contrary with the conductivity of this emitter layer 313, and one of them is p-type semiconductor, and another is N-shaped semiconductor.In addition, this second 312 is disposed a dielectric layer 314 and an electrode part 315.
This dielectric layer 314 is positioned on the surface of this emitter layer 313, and the material of this dielectric layer 314 can be silicon nitride (SiN
x), silica (SiO
x), or the mixing of silicon nitride and silica, this dielectric layer 314 can be simple layer body, or for comprising plural layer body.This dielectric layer 314 can be used as anti-reflecting layer, to promote light amount of incident, and can passivation this second 312, thereby reduce carrier recombination-rate surface (Surface Recombination Velocity is called for short SRV).
This electrode part 315 is the front electrode of battery, and contacts second 312 of this substrate 31 through this dielectric layer 314.This electrode part 315, the plurality of the first electrode 35 and this second electrode 36 coordinate the electric energy that battery is produced to be sent to outside.But due to this dielectric layer 314 and the non-improvement emphasis of the present invention of this electrode part 315, and can there be multiple different variations design, therefore no longer explanation while implementing.
This passivation layer 32 is disposed on this first surface 311 of this substrate 31, and for passivation and this first surface 311 of repairing, thereby reduce carrier recombination-rate surface.The thickness of this passivation layer 32 is about 5nm～30nm, and its material is aluminium oxide (Al
2o
3), silicon dioxide (SiO
2), SiO
x, SiN
xor amorphous silicon (a-Si).The material that the present embodiment is used is Al
2o
3, for p-type substrate, there is good passivation effect.But the material of this passivation layer 32 is not limited to this, also can uses other to can be used for passivation, repair the dielectric material on these substrate 31 surfaces.
The reflectance coating 33 of the plurality of light-permeable sequentially stack arrangement, on this passivation layer 32, for the light that passes this substrate 31 and come is reflected back into this substrate 31 inside, thereby promotes absorptivity and utilance.Each reflectance coating 33 comprises a ground floor 331, with respect to this ground floor 331 and the 3rd layer 333 between this ground floor 331 and this second layer 332 away from the second layer 332 and of this passivation layer 32.
The material of the second layer 332 of each reflectance coating 33 of the present invention is different from the material of this passivation layer 32.Certainly, can be also part difference and part is identical.Wherein be different from the material of this passivation layer 32 with the material of the ground floor 331 of this reflectance coating 33 of these passivation layer 32 adjacency.The refractive index of this ground floor 331 in each reflectance coating 33, this second layer 332 and the 3rd layer 333 is different, and preferably, and the refractive index of this ground floor 331 in each reflectance coating 33, the 3rd layer 333 and this second layer 332 from high to low sequentially.The material of each reflectance coating 33 is selected free SiN
x, SiO
x, a-Si, titanium oxide (TiO
x) group that forms.
Particularly, the a-Si layer that the ground floor 331 of each reflectance coating 33 of the present embodiment is 4 for thickness 60nm, refractive index.The SiN that is thickness 20nm, refractive index and is 2.3 for the 3rd layer 333
xlayer.The SiO that this second layer 332 is 1.5 for thickness 120nm, refractive index
xlayer.Wherein, the optical thickness of this ground floor 331 and this second layer 332 preferably approaches 1/4, the three layer 333 of lambda1-wavelength without this restriction, and the optical thickness of the 3rd layer 333 can be less.It is example that the present embodiment of take arranges three reflectance coatings 33, and the gross thickness of these three reflectance coatings 33 is (60+20+120) * 3=600nm, and this thickness is unlikely blocked up, is conducive to be applied in battery as catoptric arrangement.Certainly, above-mentioned thickness and material, must be as limits only for giving an example.And " thickness " as herein described refers to the physical thickness of layer body, " optical thickness " is the product of physical thickness and refractive index.
Although the structure of each reflectance coating 33 of the present embodiment is all identical, included layer body quantity, material, thickness, refractive index are all identical, while implementing, are not limited to this.The plurality of reflectance coating 33 ground floor 331 to each other also can be used unlike material, and refractive index can be the same or different.The plurality of reflectance coating 33 second layer 332 to each other also can be used unlike material, and refractive index can be the same or different.To each other the 3rd layer 333 of the plurality of reflectance coating 33 also can be used unlike material, and refractive index can be the same or different.In addition, each reflectance coating 33 of the present invention not take and is arranged the 3rd layer 333 and be necessary, because only coordinated with high and low refractive index and the suitable thickness of this second layer 332 by this ground floor 331, just can form good catoptric arrangement, reach the effect toward these substrate 31 reflections by light.Even if configure the 3rd layer 333, with all reflectance coatings 33, be not all configured to imperative yet, at least one in the plurality of reflectance coating 33 configures the 3rd layer 333.
This protective layer 34, between the plurality of reflectance coating 33 and this second electrode 36, is specifically coated on the surface away from this reflectance coating 33 of this passivation layer 32.The material of this protective layer 34 comprises SiN
x, can be used for protecting the plurality of reflectance coating 33.Because this first electrode 35 and the second electrode 36 are coating metal slurries and are solidified to form by sintering (firing); metal paste has aggressivity to the plurality of reflectance coating 33; therefore this protective layer 34 is set and separates this second electrode 36 and the plurality of reflectance coating 33; protective effect be can reach, thereby structure and the quality of the plurality of reflectance coating 33 maintained.But the present invention not take and this protective layer 34 is set as necessary.
The plurality of the first electrode 35 arranges at each interval, and contacts with the first surface 311 of this substrate 31 through this protective layer 34, the plurality of reflectance coating 33 and this passivation layer 32.The battery of the present embodiment also comprises a plurality of holes 30 that run through this protective layer 34, the plurality of reflectance coating 33 and this passivation layer 32, and respectively this first electrode 35 contacts with this first surface 311 through this hole 30 respectively respectively.
This second electrode 36 is roughly whole configuration and is positioned on this protective layer 34 and connects each first electrode 35, and then the plurality of the first electrode 35 can be electrically connected to by this second electrode 36 to each other.Supplementary notes, arrange this protective layer 34 because the present invention can omit, and now this second electrode 36 is to be directly arranged on this reflectance coating 33 away from this passivation layer 32.But whether no matter this protective layer 34 be set, and this second electrode 36 is the equal of to be all arranged on the plurality of reflectance coating 33.
Therefore, the present invention is arranged on this first surface 311 of this substrate 31 by the plurality of reflectance coating 33, the light reflection coming by this substrate 31 is got back to these substrate 31 inside, absorb once again, especially can promote the reflection of long wavelength's light and absorption rate again, make the light of this wave band have more chance to be absorbed by battery and be converted to electric energy, thereby improve battery in the quantum efficiency of the longer optical band of wavelength, to increase the conversion efficiency of short circuit current, lifting battery.Supplementary notes, if the first surface 311 of this substrate 31 is made as matsurface, and the reflectance coating 33 of follow-up formation is while also having rough surface along these first surface 311 coatings, by these surface roughness, can also further promote reflecting effect.
Consult Fig. 4, the second preferred embodiment of solar cell module of the present invention, roughly the same with the structure of this first preferred embodiment, different places are: each reflectance coating 33 of the present embodiment comprise a ground floor 331 and with respect to this ground floor 331 second layer 332 away from this passivation layer 32.Each reflectance coating 33 of the present embodiment omits the 3rd layer of this first preferred embodiment.
Particularly, the a-Si layer that the ground floor 331 of each reflectance coating 33 of the present embodiment is 4 for thickness 70nm, refractive index.The SiO that this second layer 332 is 1.5 for thickness 165nm, refractive index
xlayer.Take that three reflectance coatings 33 are set is example, the gross thickness of these three reflectance coatings 33 is (70+165) * 3=705nm.The ground floor 331 of the present embodiment all approaches 1/4 of lambda1-wavelength with the optical thickness of the second layer 332, and the mutual collocation of each reflectance coating 33 forms the high and low interconnected multicycle film of refractive index, this kind of structure is called again Bragg mirror (Distributed Bragg Reflector, be called for short DBR), there is good light reflecting effect, and when film periodicity is higher, reflecting effect better.
Consult Fig. 5, show the graph of a relation of a comparative example and the corresponding lambda1-wavelength of light reflectivity of experimental example 1 ~ 4 of the present invention.This comparative example place different from the present invention is not arrange reflectance coating 33 and protective layer 34.This experimental example 1 and experimental example 2 are equivalent to the structure of the first preferred embodiment of the present invention, and namely each reflectance coating 33 comprises three layers of body, but experimental example 1,2 comprises respectively four and three reflectance coatings 33, are respectively the reflective film in surrounding phase and three cycles.This experimental example 3 and experimental example 4 are equivalent to the structure of second embodiment of the invention, and namely each reflectance coating 33 comprises two-layer body, but experimental example 3,4 is respectively surrounding phase and three cycles.By experimental result, can be found out, each experimental example of the present invention is for this comparative example, because the present invention is provided with the plurality of reflectance coating 33, can be used for reflection ray, especially for wavelength, be greater than the light of 1 μ m (being 1000nm), its reflecting effect obviously promotes.
Consult Fig. 6, show the graph of a relation of this comparative example and the corresponding lambda1-wavelength of absorptivity of experimental example 1 ~ 4 of the present invention.By experimental result, can be found out, each experimental example of the present invention is for this comparative example, owing to promoting the reflection ratio of back side light, make more how long wavelength light can be reflected and enter once again in battery, thereby improve battery to the absorptivity of long wavelength's light and photoelectric conversion efficiency.
Consult Fig. 7, the 3rd preferred embodiment of solar cell module of the present invention, roughly the same with the structure of this first preferred embodiment, different places is mainly the form of the second electrode 36.In fact this solar cell 3 also configures at least one bus electrode (bus bar electrode) 37 extending along a first direction; to connect this second (not shown) of this substrate 31; or be not directly connected to this second and be located on this protective layer 34, or be directly located on the plurality of reflectance coating.The plurality of the first electrode 35 can be at each interval point-like perforate and distribute, can configure in addition a plurality of the second electrodes 36 that extend along a second direction, each second electrode 36 connects several in the plurality of the first electrode 35, and one end of each the second electrode 36 connects this bus electrode 37, by the plurality of the second electrode 36, the plurality of the first electrode 35 is electrically connected to this bus electrode 37.Certainly, respectively this first electrode 35, except above-mentioned point-like perforate design, also can be wire perforate.
Certainly, the present embodiment comprises a plurality of reflectance coatings equally, and can reach the effect identical with this first preferred embodiment, at this, no longer illustrates.
Claims (10)
1. a solar cell, comprise: a substrate that comprises a first surface, passivation layer and a plurality of first electrode being disposed on this first surface, it is characterized in that, this solar cell also comprises the reflectance coating of a plurality of light-permeables, the reflectance coating of the plurality of light-permeable sequentially stack arrangement on this passivation layer, each reflectance coating comprises a ground floor, and one with respect to this ground floor the second layer away from this passivation layer, this ground floor of each reflectance coating is different from the refractive index of this second layer, the material of the second layer of each reflectance coating is different from the material of this passivation layer, the plurality of the first electrode contacts with this first surface through the plurality of reflectance coating and this passivation layer.
2. solar cell as claimed in claim 1, is characterized in that, the material of this passivation layer is aluminium oxide, silicon dioxide, silica, silicon nitride or amorphous silicon.
3. solar cell as claimed in claim 1, is characterized in that, the material of this passivation layer is different from the material of this ground floor of this reflectance coating of adjacency.
4. solar cell as claimed in claim 1, is characterized in that, the refractive index of the ground floor of the plurality of reflectance coating differs from one another.
5. solar cell as claimed in claim 1, is characterized in that, the refractive index of the second layer of the plurality of reflectance coating differs from one another.
6. solar cell as claimed in claim 1, it is characterized in that, at least one in the plurality of reflectance coating has between this ground floor and this second layer the 3rd layer, and the refractive index of the 3rd layer is different from the refractive index of this ground floor and the refractive index of this second layer.
7. the solar cell as described in claim 1 or 6, is characterized in that, the group that the material of each reflectance coating selects free silicon nitride, silica, amorphous silicon, titanium oxide to form.
8. solar cell as claimed in claim 6, is characterized in that, the refractive index of the refractive index of this ground floor in each reflectance coating, the refractive index of the 3rd layer and this second layer from high to low sequentially.
9. solar cell as claimed in claim 1, is characterized in that, also comprises second electrode being positioned on the plurality of reflectance coating, and the plurality of the first electrode is electrically connected to by this second electrode to each other.
10. a solar cell module, comprise: first sheet material being oppositely arranged and second sheet material and an encapsulation material being positioned between this first sheet material and this second sheet material, it is characterized in that, this solar cell module also comprises a plurality of solar cells as claimed in claim 1, and the plurality of solar cell is connected and is arranged between this first sheet material and this second sheet material; This encapsulation material is coated on around the plurality of solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210371674.3A CN103715276A (en) | 2012-09-28 | 2012-09-28 | Solar cell and module thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210371674.3A CN103715276A (en) | 2012-09-28 | 2012-09-28 | Solar cell and module thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103715276A true CN103715276A (en) | 2014-04-09 |
Family
ID=50408082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210371674.3A Pending CN103715276A (en) | 2012-09-28 | 2012-09-28 | Solar cell and module thereof |
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|---|---|
| CN (1) | CN103715276A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111430376A (en) * | 2020-04-09 | 2020-07-17 | Tcl华星光电技术有限公司 | Array substrate and display device |
| CN112447861A (en) * | 2019-08-29 | 2021-03-05 | 阿聚尔斯佩西太阳能有限责任公司 | Stacked multijunction solar cell with dielectric barrier layer system |
| CN112585767A (en) * | 2018-09-14 | 2021-03-30 | 3M创新有限公司 | Double-sided solar cell panel |
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| JPH05259495A (en) * | 1992-03-10 | 1993-10-08 | Toyota Motor Corp | Solar cell element |
| JPH0784105A (en) * | 1993-09-16 | 1995-03-31 | Canon Inc | Reflecting film |
| CN101346825A (en) * | 2005-10-28 | 2009-01-14 | 通用电气公司 | Photovoltaic modules and interconnect methodology for fabricating the same |
| CN102097514A (en) * | 2010-11-04 | 2011-06-15 | 友达光电股份有限公司 | Solar cell |
-
2012
- 2012-09-28 CN CN201210371674.3A patent/CN103715276A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05259495A (en) * | 1992-03-10 | 1993-10-08 | Toyota Motor Corp | Solar cell element |
| JPH0784105A (en) * | 1993-09-16 | 1995-03-31 | Canon Inc | Reflecting film |
| CN101346825A (en) * | 2005-10-28 | 2009-01-14 | 通用电气公司 | Photovoltaic modules and interconnect methodology for fabricating the same |
| CN102097514A (en) * | 2010-11-04 | 2011-06-15 | 友达光电股份有限公司 | Solar cell |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112585767A (en) * | 2018-09-14 | 2021-03-30 | 3M创新有限公司 | Double-sided solar cell panel |
| CN112447861A (en) * | 2019-08-29 | 2021-03-05 | 阿聚尔斯佩西太阳能有限责任公司 | Stacked multijunction solar cell with dielectric barrier layer system |
| US11837672B2 (en) | 2019-08-29 | 2023-12-05 | Azur Space Solar Power Gmbh | Stacked multijunction solar cell having a dielectric insulating layer system |
| CN112447861B (en) * | 2019-08-29 | 2024-01-19 | 阿聚尔斯佩西太阳能有限责任公司 | Stacked multi-junction solar cell with dielectric spacer system |
| CN111430376A (en) * | 2020-04-09 | 2020-07-17 | Tcl华星光电技术有限公司 | Array substrate and display device |
| WO2021203552A1 (en) * | 2020-04-09 | 2021-10-14 | Tcl华星光电技术有限公司 | Array substrate and display apparatus |
| CN111430376B (en) * | 2020-04-09 | 2022-12-23 | Tcl华星光电技术有限公司 | Array substrate and display device |
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Application publication date: 20140409 |