CN103715257A - HEMT device with back surface field plate structure and manufacturing method of HEMT device - Google Patents
HEMT device with back surface field plate structure and manufacturing method of HEMT device Download PDFInfo
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- CN103715257A CN103715257A CN201410008455.8A CN201410008455A CN103715257A CN 103715257 A CN103715257 A CN 103715257A CN 201410008455 A CN201410008455 A CN 201410008455A CN 103715257 A CN103715257 A CN 103715257A
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- field plate
- back surface
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- semiconductor layer
- surface field
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- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 65
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 35
- 229910002704 AlGaN Inorganic materials 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 30
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 13
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000003754 machining Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 230000005684 electric field Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000005516 deep trap Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Abstract
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Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410008455.8A CN103715257B (en) | 2014-01-09 | 2014-01-09 | HEMT device with back surface field plate structure and manufacturing method of HEMT device |
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CN201410008455.8A CN103715257B (en) | 2014-01-09 | 2014-01-09 | HEMT device with back surface field plate structure and manufacturing method of HEMT device |
Publications (2)
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CN103715257A true CN103715257A (en) | 2014-04-09 |
CN103715257B CN103715257B (en) | 2017-01-18 |
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CN201410008455.8A Active CN103715257B (en) | 2014-01-09 | 2014-01-09 | HEMT device with back surface field plate structure and manufacturing method of HEMT device |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107068739A (en) * | 2017-03-29 | 2017-08-18 | 西安电子科技大学 | Arc grid field plate current apertures power device |
CN107170821A (en) * | 2017-03-29 | 2017-09-15 | 西安电子科技大学 | Floating type leakage field plate current apertures device and preparation method thereof |
WO2017190643A1 (en) * | 2016-05-06 | 2017-11-09 | 杭州电子科技大学 | Novel iii-v heterostructure field effect transistor |
CN108878507A (en) * | 2017-05-12 | 2018-11-23 | 美国亚德诺半导体公司 | Gallium nitride devices suitable for high frequency and high power applications |
WO2019218907A1 (en) * | 2018-05-17 | 2019-11-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Two-dimensional material transistor for regulating back gate on the basis of two-dimensional electron gas, manufacturing method, and application |
US11355598B2 (en) | 2018-07-06 | 2022-06-07 | Analog Devices, Inc. | Field managed group III-V field effect device with epitaxial back-side field plate |
CN114695114A (en) * | 2022-05-31 | 2022-07-01 | 绍兴中芯集成电路制造股份有限公司 | Semiconductor device and method for manufacturing the same |
Citations (9)
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JPS63216380A (en) * | 1987-03-05 | 1988-09-08 | Fujitsu Ltd | Semiconductor device |
JP2009049288A (en) * | 2007-08-22 | 2009-03-05 | Nec Corp | Semiconductor device |
US20100065923A1 (en) * | 2008-09-16 | 2010-03-18 | Alain Charles | Iii-nitride device with back-gate and field plate and process for its manufacture |
CN101894863A (en) * | 2009-05-21 | 2010-11-24 | 瑞萨电子株式会社 | Field-effect transistor |
US20120292665A1 (en) * | 2011-05-16 | 2012-11-22 | Fabio Alessio Marino | High performance multigate transistor |
CN102820325A (en) * | 2012-09-05 | 2012-12-12 | 电子科技大学 | Gallium nitride-based hetero-junction field effect transistor with back electrode structure |
CN103178108A (en) * | 2011-12-20 | 2013-06-26 | 英飞凌科技奥地利有限公司 | Compound semiconductor device with buried field plate |
US20130307025A1 (en) * | 2012-05-21 | 2013-11-21 | The Board Of Trustees Of The Leland Stanford Junior University | Transistor-based apparatuses, systems and methods |
CN103493206A (en) * | 2011-02-02 | 2014-01-01 | 特兰斯夫公司 | III-N device structures and methods |
-
2014
- 2014-01-09 CN CN201410008455.8A patent/CN103715257B/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63216380A (en) * | 1987-03-05 | 1988-09-08 | Fujitsu Ltd | Semiconductor device |
JP2009049288A (en) * | 2007-08-22 | 2009-03-05 | Nec Corp | Semiconductor device |
US20100065923A1 (en) * | 2008-09-16 | 2010-03-18 | Alain Charles | Iii-nitride device with back-gate and field plate and process for its manufacture |
CN101894863A (en) * | 2009-05-21 | 2010-11-24 | 瑞萨电子株式会社 | Field-effect transistor |
CN103493206A (en) * | 2011-02-02 | 2014-01-01 | 特兰斯夫公司 | III-N device structures and methods |
US20120292665A1 (en) * | 2011-05-16 | 2012-11-22 | Fabio Alessio Marino | High performance multigate transistor |
CN103178108A (en) * | 2011-12-20 | 2013-06-26 | 英飞凌科技奥地利有限公司 | Compound semiconductor device with buried field plate |
US20130307025A1 (en) * | 2012-05-21 | 2013-11-21 | The Board Of Trustees Of The Leland Stanford Junior University | Transistor-based apparatuses, systems and methods |
CN102820325A (en) * | 2012-09-05 | 2012-12-12 | 电子科技大学 | Gallium nitride-based hetero-junction field effect transistor with back electrode structure |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017190643A1 (en) * | 2016-05-06 | 2017-11-09 | 杭州电子科技大学 | Novel iii-v heterostructure field effect transistor |
CN107068739A (en) * | 2017-03-29 | 2017-08-18 | 西安电子科技大学 | Arc grid field plate current apertures power device |
CN107170821A (en) * | 2017-03-29 | 2017-09-15 | 西安电子科技大学 | Floating type leakage field plate current apertures device and preparation method thereof |
CN107068739B (en) * | 2017-03-29 | 2019-12-03 | 西安电子科技大学 | Arc grid field plate current apertures power device |
CN107170821B (en) * | 2017-03-29 | 2020-04-14 | 西安电子科技大学 | Floating type leakage field plate current aperture device and manufacturing method thereof |
CN108878507A (en) * | 2017-05-12 | 2018-11-23 | 美国亚德诺半导体公司 | Gallium nitride devices suitable for high frequency and high power applications |
US11508821B2 (en) | 2017-05-12 | 2022-11-22 | Analog Devices, Inc. | Gallium nitride device for high frequency and high power applications |
WO2019218907A1 (en) * | 2018-05-17 | 2019-11-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Two-dimensional material transistor for regulating back gate on the basis of two-dimensional electron gas, manufacturing method, and application |
US11355598B2 (en) | 2018-07-06 | 2022-06-07 | Analog Devices, Inc. | Field managed group III-V field effect device with epitaxial back-side field plate |
CN114695114A (en) * | 2022-05-31 | 2022-07-01 | 绍兴中芯集成电路制造股份有限公司 | Semiconductor device and method for manufacturing the same |
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Publication number | Publication date |
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CN103715257B (en) | 2017-01-18 |
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