CN103715160A - Thread guiding frame and power module sealing using same - Google Patents
Thread guiding frame and power module sealing using same Download PDFInfo
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- CN103715160A CN103715160A CN201310053266.8A CN201310053266A CN103715160A CN 103715160 A CN103715160 A CN 103715160A CN 201310053266 A CN201310053266 A CN 201310053266A CN 103715160 A CN103715160 A CN 103715160A
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- lead frame
- mold pressing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
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Abstract
A thread guiding frame and a power module sealing using same provided in an embodiment of the invention comprise a mold member forming area and a non-mold member forming area, wherein the mold member forming area comprises a thread guiding frame that has a mold pressing part; a semiconductor element formed on the thread guiding frame, and a mold member formed by wrapping the semiconductor element and the mold member forming area of the thread guiding frame.
Description
Technical field
The power module package that the present invention relates to lead frame and use this lead frame.
Background technology
The multiple power module package that the patent documentation 1 of take is representative all will be passed through welding sequence in manufacture process.
At this, because welding sequence will expose 3 seconds to more than 5 seconds in more than 250 ℃ high temperature, so heat can be delivered to shaped component inside via lead frame.
Owing to being delivered to the heat of shaped component inside, in power module package, often produce power device (Power Device), integrated circuit (Integrated Circuit), bootstrap diode (Bootstrap Diode) etc. are impacted or the phenomenon of epoxy resin, solder fusing.
For improving the problems referred to above, can adopt the method for the integral thickness that reduces lead frame, still, due to the weakened of lead frame self, this structure can produce the phenomenons such as flexural deformation or destruction.
Prior art document
Patent documentation
Patent documentation 1:US7,208,819B
Summary of the invention
The technical problem that invention will solve
The object of the invention is to, the power module package that a kind of lead frame is provided and utilizes this lead frame, in this lead frame, is positioned at shaped component inside for reducing the side of the thermal conductivity of lead frame.
The scheme of technical solution problem
The lead frame of embodiments of the invention comprises that shaped component forms region and non-shaped component forms region, forms region be formed with mold pressing processing (Embossing) portion at described shaped component.
The lead frame of embodiments of the invention has one side and another side, and mold pressing processing department is that described one side and another side are all to perverted projection (Convex) shape of described one side.
The lead frame of embodiments of the invention has one side and another side, and mold pressing processing department is that described one side and another side are all to perverted depression (Concave) shape of described another side.
The lead frame of embodiments of the invention has one side and another side, described shaped component forms region and comprises semiconductor element mounting region, mold pressing processing department is formed on described semiconductor installation region and take semiconductor element and forms the shape of frame as benchmark, described in form frame shape mold pressing processing department be described one side and another side all to the perverted convex of described one side or described one side and another side all to the perverted recess of described another side.
The mold pressing processing department of the lead frame of embodiments of the invention is formed with a plurality of in whole of described lead frame or a part of region.
The power module package of an alternative embodiment of the invention comprises that shaped component forms region and non-shaped component forms region, forms region have at described shaped component: the lead frame that is formed with mold pressing processing (Embossing) portion; Be formed on the semiconductor element on described lead frame; And the shaped component forming to wrap up the mode in the shaped component formation region of described semiconductor element and described lead frame.
The lead frame of the power module package of an alternative embodiment of the invention has one side and another side, and mold pressing processing department is that described one side and another side are all to the perverted convex of described one side.
The lead frame of the power module package of an alternative embodiment of the invention has one side and another side, and mold pressing processing department is that described one side and another side are all to the perverted recess of described another side.
The lead frame of the power module package of an alternative embodiment of the invention has one side and another side, described shaped component forms region and comprises semiconductor element mounting region, mold pressing processing department is formed on described semiconductor installation region and take semiconductor element and forms the shape of frame as benchmark, described in form the shape of frame mold pressing processing department be described one side and another side all to the perverted convex of described one side or described one side and another side all to the perverted recess of described another side.
The mold pressing processing department of the power module package of an alternative embodiment of the invention is formed with a plurality of in whole of described lead frame or a part of region.
By the detailed description of carrying out referring to accompanying drawing, feature of the present invention and advantage can be clearer and more definite.
Before this, the term using in this specification and claims or word can not make an explanation with the meaning on common dictionary, should be based on inventor for the invention with best approach explanation oneself, can suitably define term concept principle and be interpreted as the meaning and the concept of technological thought according to the invention.
Invention effect
Because the lead frame of embodiments of the invention and the power module package that uses this lead frame are formed with mold pressing processing department in whole of lead frame or a part of region, so there is the effect that can prevent in advance the shaped component of lead frame to form the heat transmission in region, can improve thus the reliability of product.
Accompanying drawing explanation
Fig. 1 is the structure chart that the lead frame of one embodiment of the present of invention is shown.
Fig. 2 is the back view that the lead frame of Fig. 1 is shown.
Fig. 3 is the structure chart that the lead frame of an alternative embodiment of the invention is shown.
Fig. 4 is the structure chart that the lead frame of another embodiment of the present invention is shown.
Fig. 5 is the structure chart that the lead frame of another embodiment of the present invention is shown.
Fig. 6 is the structure chart that the power module package of embodiments of the invention is shown.
Fig. 7 is for the curve chart of rate of temperature change of the power module package of embodiments of the invention is described.
Description of reference numerals
100: lead frame, 110a: shaped component forms region, 110b: non-shaped component forms region, 131,133,135: mold pressing processing department, 120: semiconductor element mounting region, 140: semiconductor element, 150: shaped component, 200: power module package.
Embodiment
According to the detailed description relevant to accompanying drawing and preferred embodiment, object of the present invention, specific advantage and novel feature will be clearer and more definite.It should be noted, while in this manual the element of each accompanying drawing being marked to Reference numeral, for identical element, even if be presented on different accompanying drawings, be also labeled as far as possible identical Reference numeral.In addition,, in to explanation of the present invention, in the situation that think and can obscure purport of the present invention to illustrating of relevant known technology, will omit detailed description thereof.In this manual, first, second term such as grade is that element is not limited by above-mentioned term for an element and other element are distinguished and used.
Below, with reference to accompanying drawing, the preferred embodiment of the present invention is at length described.
Lead frame
Fig. 1 is the structure chart that the lead frame of one embodiment of the present of invention is shown, Fig. 2 is the back view that the lead frame of Fig. 1 is shown, Fig. 3 is the structure chart that the lead frame of an alternative embodiment of the invention is shown, Fig. 4 is the structure chart that the lead frame of another embodiment of the present invention is shown, and Fig. 5 is the structure chart that the lead frame of another embodiment of the present invention is shown.
The Reference numeral 131,133 and 135 of below recording is all formed on the mold pressing processing department of lead frame for mark, according to corresponding details form, select to apply Reference numeral.
As shown in Figures 1 to 5, lead frame 100 comprises that shaped component forms region 110a and non-shaped component forms region 110b, forms region 110a be formed with mold pressing processing department 131,133,135 at shaped component.
At this, shaped component forms region 110a and non-shaped component and forms region 110b to take as the A-A ' line that forms the benchmark of shaped component by subsequent handling be benchmark, is divided into the shaped component formation region 110a in the region of wrap up shaped component and does not form the non-shaped component formation region 110b of shaped component.
In addition, lead frame 100 has one side and another side.
At this, mold pressing processing department 131 can be the one side of lead frame 100 and another side all to the perverted convex of one side (with reference to Fig. 1 131).
Illustrate in greater detail, as shown in Figure 2, the mold pressing processing department 131 that is formed on the convex of lead frame 100 forms the back side as the concave shape of groove shape.
In addition mold pressing processing department, 133 can be also the one side of lead frame 100 and another side all to the perverted recess of another side (with reference to Fig. 3 133).
On the other hand, as shown in Figure 4, the shaped component of lead frame 100 forms region 110a can also comprise semiconductor element mounting region 120.
At this, mold pressing processing department 135 is formed on semiconductor element mounting region 120, and take semiconductor element (not shown) and form the shape of frame as benchmark.
Described semiconductor element can comprise the little control element of caloric value as the large power component of the caloric values such as insulated gate bipolar transistor (Insulated Gate Bipolar Transistor), diode (Diode) and picture control integration circuit (Integrated Circuit).
In addition, the mold pressing processing department 135 that forms the shape of frame can be one side and another side all to the perverted convex of one side, or one side and another side are all to the perverted recess of another side.
Illustrate in greater detail for, the mold pressing processing department 135 that the semiconductor element of take forms the shape of frame as benchmark be take on the semiconductor element installed by the subsequent handling frame as benchmark is formed on the region contacting with lead frame 100 except semiconductor element, in the operation of the generation heat as welding sequence, to stop the heat transmitting from the non-shaped component formation region 110b of lead frame to be delivered to semiconductor element.
As shown in Figure 4, the mold pressing processing department 135 of frame shape can form tetragonal shape, and is not limited to this, so long as can postpone the shape of the heat transmission of semiconductor element, just can use.
On the other hand, as shown in Figure 5, can be formed with a plurality of mold pressing processing departments 131,133,135 in whole of lead frame 100 or a part of region.
For example, lead frame 100 can comprise the mold pressing processing department 131,133 of convex or recess and the mold pressing processing department 135 that is formed on semiconductor element mounting region with frame shape.
Above-mentioned structure is that the heat that 131,133 mold pressing processing department is transmitted the non-formation region of the shaped component from lead frame stops for the first time by Reference numeral, and the mold pressing processing department that is 135 by Reference numeral is blocked for the second time to heat.
When manufacturing power module package, if apply suddenly the situation of heat while there is picture welding, heat will form region 110b and start to transmit from the non-shaped component of lead frame, semiconductor element is exerted an influence, suddenly the heat applying can have a direct impact semiconductor element, reduces the performance of semiconductor element.
Therefore, in an embodiment of the present invention, the heat that stops the non-shaped component from lead frame producing when the manufacture of power module package to form region 110b transmission is delivered to semiconductor element, thereby can not apply to semiconductor element the heat of moment.
Thus, embodiments of the invention can improve the reliability of the manufacturing process of power module package, can obtain the effect of saving the producing cost of product by stable processing step.
Power module package
Fig. 6 is the structure chart that the power module package of embodiments of the invention is shown, and Fig. 7 is for the curve chart of rate of temperature change of the power module package of embodiments of the invention is described.
At this, with reference to above-mentioned Fig. 1 to Fig. 5, describe.
As shown in Figure 3, Figure 5 and Figure 6, power module package 200 comprises: lead frame 100, this lead frame comprises that shaped component forms region 110a and non-shaped component forms region 110b, forms region 110a be formed with mold pressing processing department 131,133,135 at shaped component; Be formed on the semiconductor element 140 on lead frame 100; And the shaped component 150 forming to wrap up the mode of the shaped component formation region 110a of semiconductor element 140 and lead frame 100.
Although in Fig. 6, only illustrate for convenience of description the mold pressing processing department 135 that is formed on the installation region of semiconductor element with the shape of frame, obviously, also can comprise the mold pressing processing department 131,133 of convex or recess.
In addition, lead frame 100 can have one side and another side.
At this, mold pressing processing department 131 can be the one side of lead frame 100 and another side all to the perverted convex of one side (with reference to Fig. 1 131).
As shown in Figure 2, illustrate in greater detail as being formed on the mold pressing processing department 131 of the convex of lead frame 100 and form the back side as the concave shape of groove shape.
In addition mold pressing processing department, 133 can be also the one side of lead frame 100 and another side all to the perverted recess of another side (with reference to Fig. 3 133).
On the other hand, as shown in Figure 4, the shaped component of lead frame 100 forms region 110a can also comprise semiconductor element mounting region 120.
At this, mold pressing processing department 135 is formed on semiconductor element mounting region 120, and take semiconductor element (not shown) and form frame form as benchmark.
Described semiconductor element can comprise power component that the caloric value as insulated gate bipolar transistor, diode etc. is large and the little control element of caloric value as control integration circuit.
In addition, the mold pressing processing department 135 that forms frame form can be one side and another side all to a side direction lobe shape, or one side and another side are all to the recess of another side side direction bending.
As shown in Figure 5, can be formed with a plurality of mold pressing processing departments 131,133,135 in whole of lead frame 100 or a part of region.
For example, lead frame 100 can comprise the mold pressing processing department 131,133 of convex or recess and the mold pressing processing department 135 that is formed on semiconductor element mounting region with the shape of frame.
Variations in temperature during below, to the power module package of embodiments of the invention and the welding of general power module package describes.
The power module package 200 of embodiments of the invention is when carrying out weld job, because the non-shaped component from lead frame 100 forms the heat that region 110b transmits, make in the temperature of the surface measurements of semiconductor element 140 as shown in table 1ly, the surface temperature rate of semiconductor element 140 is as shown in the curve of Fig. 7.
At this, general power module package represents with Normal, used and comprised the convex of Fig. 1 to Fig. 3 or the mold pressing processing department 131 of recess, the power module package of 133 lead frame structure represents with Case_01, the power module package of lead frame structure that has used the shape with frame that comprises Fig. 4 to be formed on the mold pressing processing department 135 in semiconductor element mounting region represents with Case_02, used and comprised the convex of Fig. 5 or the mold pressing processing department 131 of recess, 133 and the power module package of the lead frame structure of the mold pressing processing department 135 of the shape of frame with Case_01+02, represent.
In addition, the environmental information of the surface temperature of mensuration semiconductor element 140 is as follows.
Convection current conductive coefficient is 0.05mW/mm
2k, outside atmosphere temperature (environment temperature of power module package) is 180 ℃, the temperature that the non-shaped component of lead frame 100 forms region 110b side is 250 ℃.
[table 1]
| Second | Normal | Case_01 | Case_02 | Case_01+02 |
| 0 | 100 | 100 | 100 | 100 |
| 1 | 104.871 | 102.866 | 104.484 | 102.878 |
| 2 | 112.24 | 108.119 | 111.594 | 108.169 |
| 3 | 119.13 | 113.827 | 118.467 | 113.917 |
| 4 | 125.224 | 119.352 | 124.647 | 119.477 |
| 5 | 130.68 | 124.56 | 130.222 | 124.714 |
| 6 | 135.647 | 129.448 | 135.311 | 129.625 |
| 7 | 140.223 | 134.034 | 140.001 | 134.232 |
| 8 | 144.466 | 138.341 | 144.346 | 138.555 |
| 9 | 148.418 | 142.387 | 148.386 | 142.612 |
| 10 | 152.106 | 146.187 | 152.15 | 146.422 |
| 11 | 155.555 | 149.757 | 155.662 | 149.999 |
| 12 | 158.782 | 153.111 | 158.943 | 153.357 |
| 13 | 161.807 | 156.263 | 162.011 | 156.512 |
| 14 | 164.644 | 159.227 | 164.889 | 159.478 |
| 15 | 167.309 | 162.017 | 167.586 | 162.267 |
| 16 | 169.814 | 164.644 | 170.117 | 164.893 |
| 17 | 172.172 | 167.121 | 172.495 | 167.367 |
| 18 | 174.395 | 169.458 | 174.732 | 169.702 |
| 19 | 176.493 | 171.667 | 176.84 | 171.907 |
| 20 | 178.475 | 173.756 | 178.828 | 173.992 |
On the other hand, the time of the lower limiting temperature that can bear that reaches a high temperature (about 150 ℃) more postpones, or the more delay of state of moment transmission high temperature, and the damage that semiconductor element 140 is subject to is just less.
As shown in table 1, can confirm that Case_01, the Case_02 of the power module package 200 of embodiments of the invention, Case_01+02 compare with the structure of the power module package of ordinary construction, the temperature that semiconductor element 140 is measured is lower.
Particularly, can confirm that the temperature of semiconductor element 140 of the present invention was compared low with the temperature of general semiconductor element at 0 second to 2 seconds that is equivalent to the hot transmission initial stage.
Above-mentioned Case_01 compares with the power module package of ordinary construction with the power module package of Case_01+02, can will postpone about 22% to the heat transfer time of semiconductor element 140.
In addition, as shown in Figure 7, Case_01 compares with the power module package of ordinary construction with Case_01+02, and (for example, 0 second～2 seconds) variations in temperature per hour approximately wants little 25% to 45%, Case_02 approximately little by 1% to 9% in the early stage.
That is, power module package of the present invention can postpone to reach the time of the limiting temperature that semiconductor element can bear, and can prevent semiconductor element to transmit the high temperature of moment, can improve stability and the reliability of product.
Above, although the present invention is at length illustrated by specific embodiment, this is just in order to specifically describe the present invention, and the present invention is not limited thereto, in technical conceive of the present invention, this area and technical staff can be out of shape or improve is obvious.
Simple distortion of the present invention and change are all belonged to scope of the present invention, and concrete protection range of the present invention is determined by the claim of adding.
Claims (10)
1. a lead frame, wherein, this lead frame comprises that shaped component forms region and non-shaped component forms region, forms region be formed with mold pressing processing department at described shaped component.
2. lead frame according to claim 1, wherein, described lead frame has one side and another side, and described mold pressing processing department is that described one side and described another side are all to the perverted convex of described one side.
3. lead frame according to claim 1, wherein, described lead frame has one side and another side, and described mold pressing processing department is that described one side and described another side are all to the perverted recess of described another side.
4. lead frame according to claim 1, wherein, described lead frame has one side and another side, described shaped component forms region and comprises semiconductor element mounting region, described mold pressing processing department is formed on described semiconductor installation region and take semiconductor element and forms the shape of frame as benchmark, described in form the shape of frame mold pressing processing department be described one side and described another side all to the perverted convex of described one side or described one side and described another side all to the perverted recess of described another side.
5. lead frame according to claim 1, wherein, is formed with a plurality of described mold pressing processing departments in whole of described lead frame or a part of region.
6. a power module package, wherein, this power module package comprises: lead frame, this lead frame comprises that shaped component forms region and non-shaped component forms region, forms region be formed with mold pressing processing department at described shaped component; Be formed on the semiconductor element on described lead frame; And the shaped component forming to wrap up the mode in the shaped component formation region of described semiconductor element and described lead frame.
7. power module package according to claim 6, wherein, described lead frame has one side and another side, and described mold pressing processing department is that described one side and described another side are all to the perverted convex of described one side.
8. power module package according to claim 6, wherein, described lead frame has one side and another side, and described mold pressing processing department is that described one side and described another side are all to the perverted recess of described another side.
9. power module package according to claim 6, wherein, described lead frame has one side and another side, described shaped component forms region and comprises semiconductor element mounting region, described mold pressing processing department is formed on described semiconductor installation region and take semiconductor element and forms the shape of frame as benchmark, described in form the shape of frame mold pressing processing department be described one side and described another side all to the perverted convex of described one side or described one side and described another side all to the perverted recess of described another side.
10. power module package according to claim 6, wherein, is formed with a plurality of described mold pressing processing departments in whole of described lead frame or a part of region.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2012-0109993 | 2012-10-04 | ||
| KR20120109993 | 2012-10-04 |
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| CN103715160A true CN103715160A (en) | 2014-04-09 |
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| CN201310053266.8A Pending CN103715160A (en) | 2012-10-04 | 2013-02-19 | Thread guiding frame and power module sealing using same |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080224162A1 (en) * | 2007-03-14 | 2008-09-18 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode package |
| CN102201525A (en) * | 2010-03-25 | 2011-09-28 | Lg伊诺特有限公司 | Light emitting device package and lighting system having the same |
| CN202049946U (en) * | 2011-04-13 | 2011-11-23 | 吴江恒源金属制品有限公司 | Optimized lead frame |
| CN202977407U (en) * | 2012-12-07 | 2013-06-05 | 三垦电气株式会社 | Semiconductor module |
-
2013
- 2013-02-19 CN CN201310053266.8A patent/CN103715160A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080224162A1 (en) * | 2007-03-14 | 2008-09-18 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode package |
| CN102201525A (en) * | 2010-03-25 | 2011-09-28 | Lg伊诺特有限公司 | Light emitting device package and lighting system having the same |
| CN202049946U (en) * | 2011-04-13 | 2011-11-23 | 吴江恒源金属制品有限公司 | Optimized lead frame |
| CN202977407U (en) * | 2012-12-07 | 2013-06-05 | 三垦电气株式会社 | Semiconductor module |
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Application publication date: 20140409 |