CN103713204B - Jig and charge determining method - Google Patents
Jig and charge determining method Download PDFInfo
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- CN103713204B CN103713204B CN201310456550.XA CN201310456550A CN103713204B CN 103713204 B CN103713204 B CN 103713204B CN 201310456550 A CN201310456550 A CN 201310456550A CN 103713204 B CN103713204 B CN 103713204B
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Abstract
The invention relates to a jig. The jig provided by one embodiment of the invention is used by a device capable of carrying out the plasma processing on the substrate by using the plasma for measuring the charge amount accumulated on the substrate. The jig comprises a bottom plate made of metal materials; an insulation layer protruded from the bottom plate upwardly; and a metal layer disposed on the upper end of the insulation layer.
Description
Technical field
The present invention relates to a kind of fixture and charge measurement method.
Background technology
The process of substrate can utilize plasma.For example, excite auxiliary gas and after producing plasma, it is possible to use
Plasma etching substrate.In the case of using corona treatment substrate, can occur to cause because of upper-lower position on substrate
The quantity of electric charge is poor.The quantity of electric charge difference produced on substrate can produce impact to the Performance Characteristics of substrate.Accordingly, it would be desirable to utilizing plasma
The difference of the quantity of electric charge produced on the substrate of body process is measured.
The content of the invention
Technical problem to be solved
It is an object of the invention to provide a kind of fixture that can measure the electric charge accumulated on substrate and charge measurement method.
Also, a kind of it is an object of the invention to provide different quantities of electric charge that can be measured according to the accumulation of the region of substrate
Fixture and charge measurement method.
Technical scheme
According to an aspect of the present invention, a kind of fixture can be provided, its be using plasma to substrate perform etc. from
The fixture used to measure the quantity of electric charge accumulated on substrate when technique is carried out in the device that daughter is processed, the fixture bag
Include：The base plate of metal material；From the insulating barrier that the base plate is prominent to top；And it is arranged on the gold of the upper end of the insulating barrier
Category layer.
Also, the breakthrough part for crossing upper and lower surface can be formed on the insulating barrier, can in the metal level
To form hole corresponding with the breakthrough part.
Also, the breakthrough part and the hole can be the shape of pattern.
Also, the fixture can also include auxiliary metal layer, the auxiliary metal layer is attached to the insulating barrier with position
In the breakthrough part.
Also, the base plate can be aluminium material, and the insulating barrier can be aluminium oxide（aluminum oxide）Material.
According to a further aspect in the invention, a kind of charge measurement method can be provided, substrate is held fixture is placed on
In the state of the device of row corona treatment, described device is operated, measure the electric charge accumulated on the fixture.The fixture bag
Include base plate, the insulating barrier prominent to the top of the base plate and the metal level positioned at the insulating barrier upper end.
Also, the breakthrough part for crossing upper and lower surface can be formed on the insulating barrier, on the metal level
Corresponding with breakthrough part hole is formed, makes the base plate and the metal level can be with stored charge, and with different current potentials.
And it is possible to measure the voltage of the base plate and the metal level.
Also, the fixture can also include being attached to the insulating barrier the auxiliary metal layer positioned at the breakthrough part,
The fixture can measure the potential difference between the auxiliary metal layer.
Also, the fixture can also include being attached to the insulating barrier the auxiliary metal layer positioned at the breakthrough part,
The fixture can measure the voltage between the auxiliary metal layer and the base plate.
Also, the fixture can also include being attached to the insulating barrier the auxiliary metal layer positioned at the breakthrough part,
The fixture can measure the voltage of the auxiliary metal layer and the metal level.
Also, the fixture is provided with multiple in described device, the quantity of electric charge for being accumulated in each fixture can be measured.
And it is possible to measurement is accumulated in the electric charge of the fixture in real time during described device is operated.
Also, the breakthrough part and the hole be formed as the substrate formed pattern shape, make the base plate and
The metal level can be with stored charge and with different current potentials.
Also, described device can with process conditions identical condition behaviour during corona treatment to the substrate
Make.
In accordance with a further aspect of the present invention, a kind of measurement in the device that corona treatment is performed to substrate can be provided
The method of the quantity of electric charge accumulated on substrate during corona treatment, will be the pattern being formed with the upper end of the substrate is formed corresponding
The fixture in hole arrange to described device, with fill described in identical technological operation when corona treatment is carried out to the substrate
Put, measure the quantity of electric charge of fixture accumulation, wherein the quantity of electric charge accumulated on the substrate is based on measuring in the fixture
The quantity of electric charge is calculated.
Also, the fixture size can be with less than the substrate.
Also, the fixture is provided with multiple in described device, the quantity of electric charge for being accumulated in each fixture can be measured.
And it is possible to measurement is accumulated in the electric charge of the fixture in real time during described device is operated.
The effect of the present invention
According to one embodiment of present invention, the quantity of electric charge accumulated on substrate can be measured.
Also, the different quantity of electric charge according to the accumulation of the region of substrate according to one embodiment of present invention, can be measured.
Description of the drawings
Fig. 1 is the axonometric chart for illustrating fixture according to an embodiment of the invention.
Sectional views of the Fig. 2 for the fixture of Fig. 1.
Fig. 3 is the figure of the use state of the fixture for illustrating Fig. 1.
Fig. 4 is to illustrate that the fixture of Fig. 1 is configured in the figure of the state on substrate.
Fig. 5 is the axonometric chart for illustrating fixture according to another embodiment of the present invention.
Fig. 6 is the sectional view of the fixture according to another embodiment.
Fig. 7 is the figure of the use state of the fixture for illustrating Fig. 6.
Symbol description
10：Fixture 20：Device
101：Base plate 102：Insulating barrier
103：Breakthrough part 105：Metal level
106：Hole 220：Lower electrode
230：Heater 410：Microwave power supply
420：Waveguide 430：Coaxial converter
440：Antenna element 441：External conductor
Specific embodiment
Below, referring to the drawings embodiments of the invention are described in detail.Embodiments of the invention can deform
For various forms, should not be construed as the scope of the present invention and limited by the following examples.The present embodiment is in order to in this area
People with general knowledge more completely illustrates the present invention and provides.Therefore, in figure, the shape of element is clearer and more definite in order to emphasize
Explanation and exaggerated.
Fig. 1 is the axonometric chart for illustrating fixture according to an embodiment of the invention, and Fig. 2 is the sectional view of the fixture of Fig. 1.
See figures.1.and.2, fixture 10 includes base plate 101, insulating barrier 102 and metal level 105.
Base plate 101 can be the plate with various shapes.For example, base plate 101 can be circular or polygonal plate.Base plate
101 is conductor.For example, base plate 101 can be aluminium material.
Insulating barrier 102 is prominent to top on the upper surface of base plate 101.Insulating barrier 102 can aoxidize aluminium material with position.Insulation
Layer 102 is formed as with certain thickness.For example, the thickness of insulating barrier 102 and the substrate used in quasiconductor or display manufacturing
The thickness correspondence of the pattern of upper formation.Breakthrough part 103 is formed on insulating barrier 102.When upside is observed, breakthrough part 103 can be formed
For circular or polygon etc..Breakthrough part 103 is formed as the upper and lower surface for crossing insulating barrier 102.Therefore, breakthrough part is set
Expose the upper surface of base plate 101 at 103 position.
Metal level 105 is located at the upper end of insulating barrier 102.Hole 106 is formed on metal level 105.Hole 106 can be formed as and pass through
103 correspondence of logical portion.Therefore, the hole 106 of metal level 105 can be connected with the breakthrough part 103 of insulating barrier 102.The upper table of base plate 101
Expose in the hole 106 of breakthrough part 103 and metal level 105 of the part in face by insulating barrier 102.
Fig. 3 is the figure of the use state of the fixture for illustrating Fig. 1.
With reference to Fig. 3, fixture 10 may be located at the upper surface for arranging substrate W in apparatus 20.
Device 20 performs corona treatment to substrate W.Device 20 includes that processing chamber 200, substrate supporting portion, gas are supplied
To portion 320 and microwave applying unit 400.
Processing chamber 200 is internally formed space 201, and inner space 201 is used as the space for performing substrate W handling process.
Opening can be formed in a side wall of processing chamber 200（It is not shown）.Opening comes in and goes out as substrate W inside processing chamber 200
Path.Opening is by door（It is not shown）Opening and closing.The base surface of processing chamber 200 is formed with steam vent 202.Steam vent 202 with
Exhaust line 203 connects.The byproduct of reaction that produces in technical process and can be with the gas of the internal stops of processing chamber 200
By exhaust line 203 to outside discharge.
Substrate supporting portion is internally provided with processing chamber 200.Substrate supporting portion supporting substrates W.Substrate supporting portion includes
Dielectric plate 210, lower electrode and heater 230.
Dielectric plate 210 is opposite disposed with electrolyte blocks 451.Electrolyte of the dielectric plate 210 for disc-shape
（dielectric substance）.Substrate W is placed in the upper surface of dielectric plate 210.The upper table radius surface of dielectric plate 210
Less than substrate W.Therefore, the marginal area of substrate W is located at the outside of dielectric plate 210.
The inside of dielectric plate 210 is embedded with lower electrode 220 and heater 230.Lower electrode 220 is located at heater
230 top.Lower electrode 220 is electrically connected with the first lower electric power 221.First lower electric power 221 includes DC source.Under
Switch 222 is provided between portion's electrode 220 and the first lower electric power 221.Lower electrode 220 can pass through the ON/OFF of switch 222
（ON/OFF）It is electrically connected with the first lower electric power 221.When switch 222 is opened（ON）When, apply unidirectional current to lower electrode 220
Stream.By the electric current applied on lower electrode 220, electrostatic force between lower electrode 220 and substrate W, by electrostatic
Power, substrate W are adsorbed on dielectric plate 210.
Heater 230 and external power source（It is not shown）Electrical connection.Heater 230 is by resisting the electricity that external power source applies
Flow and produce heat.The heat of generation is passed to substrate W by dielectric plate 210.The heat produced by heater 230, substrate W dimensions
Hold in predetermined temperature.Heater 230 includes spiral-shaped coil.Heater 230 can be embedded in electric Jie at uniform intervals
Scutum 210.Also, substrate supporting portion is provided with cooling flowing path（It is not shown）It is thus able to cool down substrate supporting portion.
Gas supply part 320 supplies auxiliary gas to the inside of processing chamber 200.Gas supply part 320 can be by work
The gas supplying holes 205 that 200 side wall of skill chamber is formed supply auxiliary gas to the inside of processing chamber 200.
Microwave applying unit 400 applies microwave so as to excite auxiliary gas to the inside of processing chamber 200.Microwave applying unit
400 include microwave power supply 410, waveguide 420, coaxial converter 430, antenna element 440, electrolyte blocks 451, dielectric plate
470 and coldplate 480.
Microwave power supply 410 produces microwave.Waveguide 420 is connected with microwave power supply 410, there is provided what microwave power supply 410 was produced
The path of microwave transfer.
Coaxial converter 430 is set inside the front end of waveguide 420.Coaxial converter 430 can be coniform shape.It is logical
Cross the first main body 421 inner space transmission microwave in coaxial converter 430 turn model and propagate downwards.Microwave can
With from TE Mode changes into TEM mode.
The microwave of turn model in coaxial converter 430 is vertically transmitted by antenna element 440.Antenna element 440
Including external conductor 441, inner conductor 442 and antenna 443.External conductor 441 is located at the bottom of waveguide 420.In outside
Inside conductor 441, the space 441a being connected with the inner space of waveguide 420 is formed in vertical direction.
External conductor 441 is internally provided with inner conductor 442.Rod of the inner conductor 442 for cylindrical shape（rod）, its
Length direction is abreast configured with above-below direction.The upper end insertion of inner conductor 442 is fixed to the lower end of coaxial converter 430
Portion.Inner conductor 442 extends downwards, and its lower end is located at the inside of processing chamber 200.The lower end of inner conductor 442 is fixed and is connect
Close the center of antenna 443.Inner conductor 442 is configured to the upper surface perpendicular to antenna 443.Antenna 443 and substrate supporting portion
It is arranged opposite.
Antenna 443 is provided for the disk of thickness of thin.Used as one, antenna 443 can be supplied for copper.In the bottom of antenna 443
It is provided with electrolyte blocks 451.Electrolyte blocks 451 are the electrolytes such as aluminium oxide, quartz.The microwave that antenna 443 applies is through electrolyte
Block 451 is to 200 inner radiation of processing chamber.The electric field of the microwave by radiating, the auxiliary gas being supplied in processing chamber 200
Excite as plasma state.The upper surface of electrolyte blocks 451 can be with the bottom surface predetermined distance of antenna 443.Unlike this, electricity
The upper surface of medium block 451 can be contacted with the bottom surface of antenna 443.
Below, the method for the quantity of electric charge for accumulating on the substrate W to measurement in corona treatment is illustrated.
When the substrate W that upper surface is provided with fixture 10 is placed on support 200, device 20 is operated.Device 20 with
With identical technological operation when carrying out corona treatment to substrate W.Once plasma will be supplied to by operation device 20
The top of substrate W.The bottom of substrate W can apply bias voltage.Bias voltage can be negative pressure.Therefore, band in plasma
The ion of positive electricity can be collided with the upper surface of substrate W and form pattern.Also, cation is through 106 He of hole of metal level 105
The breakthrough part 103 of insulating barrier 102 reaches base plate 101.Additionally, anion can be supplied to metal level 105.By 101 He of base plate
The electric charge accumulated on metal level 105 and the potential difference for producing can be with voltage measurement amount.For example, base plate 101 can pass through first
Wire L1 is connected with first voltage meter 107.Metal level 105 can be connected with second voltage meter 108 by the second wire L2.First
Voltameter 107 and second voltage meter 108 can measure the voltage that the electric charge accumulated on base plate 101 and metal level 105 is produced respectively.
The voltage that can be measured by voltameter 107,108 knows the quantity of electric charge accumulated on metal level 105 and base plate 101.Device 20 with
With the electric charge accumulated in identical technological operation, therefore base plate 101 and metal level 105 when corona treatment is carried out to substrate W
Measure corresponding with the quantity of electric charge that the bottom of substrate and top accumulate.Therefore, the electric charge by accumulating on metal level 105 and substrate 101
Amount is it is known that the quantity of electric charge accumulated in actual substrate.
Also, the value measured by first voltage meter 107 and second voltage meter 108, it is known that base plate 101 and metal level
Potential difference between 105.As a result it will be appreciated that the difference of the quantity of electric charge between base plate 101 and metal level 105.
Also, first voltage meter 107 can device 20 operate during real-time detection base plate 101 voltage.Second voltage
Meter 108 can device 20 operate during real-time detection metal level 105 voltage.Therefore, can be with during the operation of device 20
The electric charge for accumulating in measured material 20 in real time.
Fig. 4 is to illustrate that the fixture of Fig. 1 is configured in the figure of the state on substrate.
With reference to Fig. 4, multiple fixtures 10 on substrate W, can be configured.For example, fixture 10 may be located at and be formed on substrate W
At the corresponding position of chip.The substrate W for being configured with fixture 10 is moved in device identically with Fig. 2.Include in each fixture 10
Base plate 101 and metal level 105 are wired to voltameter.The quantity of electric charge of the regional accumulation of substrate W can be with difference.Cause
This, when configuring multiple fixtures 10 on substrate W, can measure the quantity of electric charge that substrate W is run up to by regional respectively.At each
The method that the quantity of electric charge is measured in fixture 10 is identical with Fig. 3.
Fig. 5 is the axonometric chart for illustrating fixture according to another embodiment of the present invention.
With reference to Fig. 5, fixture 11 includes base plate 111, insulating barrier 112 and metal level 115.Base plate 111, insulating barrier 112 with
And the structure of metal level 115 is identical with the fixture 10 of Fig. 1, therefore the repetitive description thereof will be omitted.
The hole 116 that metal level 105 is formed can be shape corresponding with the pattern formed on substrate W.Also, each hole
116 can be mutually different shape.The breakthrough part formed on insulating barrier 112 is and 116 corresponding shape of hole.
Also, fixture 11 can be size corresponding with the chip formed on substrate W or shape.Therefore, put on substrate W
When measuring electric charge after putting multiple fixtures 11, each fixture 11 is may be located at position corresponding with chip.
Fig. 6 is the sectional view of the fixture according to another embodiment.
With reference to Fig. 6, fixture 12 includes base plate 121, insulating barrier 122 and metal level 125.Base plate 121, insulating barrier 122 with
And the structure of metal level 125 is identical with the fixture 10 of Fig. 1.Also, hole 126 and breakthrough part 123 and the fixture 10 or Fig. 5 of Fig. 1
Fixture 11 is identical.Therefore, the repetitive description thereof will be omitted.
Can be with provided auxiliary metal level 127,128, to arrange breakthrough part 123 on insulating barrier 122.First auxiliary metal layer
127 and second auxiliary metal layer 128 can be located on the breakthrough part 123 of adjacent insulating barrier 122 respectively.Therefore, see in upside
During survey, the first auxiliary metal layer 127 and the second auxiliary metal layer 128 can be configured Face to face.
Fig. 7 is the figure of the use state of the fixture for illustrating Fig. 6.
With reference to Fig. 7, after fixture 12 is placed on substrate W, when substrate W moves into device 20, the first auxiliary metal layer 127 and the
Two auxiliary metal layers 128 are connected with first voltage meter 131 and second sensor 132 by the first wire L4 and the second wire L3 respectively
Connect.First auxiliary metal layer 127 and the second auxiliary metal layer 128 can respectively by flowing through the breakthrough part 123 of insulating barrier 122
Cation is powered.It is auxiliary that first voltage meter 131 and second voltage meter 132 can measure the first auxiliary metal layer 127 and second respectively
The voltage of aided metal layer 128.The voltage measured by voltameter 131,132, can measure
Electric charge.Therefore, first voltage meter 131 and second voltage meter 132 can measure between the breakthrough part 123 of insulating barrier 122 just from
The inequality extent of son supply.Voltameter 131,132 measures voltage and the method for the quantity of electric charge is identical with Fig. 2, therefore omits repetition
Explanation.
Also, one of voltameter 131,132 can be connected with one of auxiliary metal layer 127,128, in voltameter 131,132
It is remaining to be connected with base plate 121.Voltameter 131,132 can detect respectively base plate 121 and auxiliary metal layer 127,128 it
One voltage.Therefore, it can detect the quantity of electric charge of one of base plate 121 and auxiliary metal layer 127,128 accumulation.And it is possible to examine
Potential difference and the difference of the quantity of electric charge that survey is produced between one of base plate 121 and auxiliary metal layer 127,128.
Also, one of voltameter 131,132 can be connected with one of auxiliary metal layer 127,128, in voltameter 131,132
It is remaining to be connected with metal level 125.Voltameter 131,132 can detect respectively metal level 125 and auxiliary metal layer 127,
One of 128 voltage.Therefore, it can detect the quantity of electric charge of one of metal level 125 and auxiliary metal layer 127,128 accumulation.Also,
The difference of the potential difference and quantity of electric charge produced between one of metal level 125 and auxiliary metal layer 127,128 can be detected.
Used as another embodiment, the first auxiliary metal layer 127 and the second auxiliary metal layer 128 can be located at respectively and be separated by one
The breakthrough part 123 of set a distance.
Also, illustrate the example of etch process is performed using plasma in the embodiment, but science and engineering at substrate W
Skill not limited to this, can be applicable to the various substrate W handling process using plasma, such as depositing operation, cineration technics
And cleaning etc..
Detailed description above is of the invention to illustrate.Also, foregoing teachings are to illustrate that the preferred embodiment of the present invention is entered
Row explanation, the present invention can be used under various various combinations, change and environment.That is, in the invention of this disclosure
The scope of concept can be become with the range of the technology or knowledge of the scope that is equal to of disclosure and/or this area that describe
More or modification.The embodiment of description illustrates that the present invention's is concrete suitable for realizing the optimum state of the technological thought of the present invention
It is also possible with the numerous variations required in field and purposes.Therefore, above detailed description of the invention is not intended to open
Embodiment limit the present invention.Also, appended claims scope is should be interpreted that including other embodiment.
Claims (17)
1. a kind of fixture, is being performed to substrate in the device of corona treatment using plasma, and the fixture is used to measure
The quantity of electric charge accumulated on substrate in technical process, the fixture include：
Base plate, metal material；
Insulating barrier, it is prominent to top from the base plate；And
Metal level, provides in the upper end of the insulating barrier；
Wherein, formed on the insulating barrier and cross the breakthrough part of upper and lower surface, the metal level formed with it is described
The corresponding hole of breakthrough part.
2. fixture according to claim 1, wherein, the breakthrough part and the hole are pattern form.
3. fixture according to claim 1, wherein, the fixture also includes auxiliary metal layer, and the auxiliary metal layer is attached
The insulating barrier and be located at the breakthrough part.
4. fixture according to claim 1, wherein, the base plate is aluminium material, and the insulating barrier is aluminium oxide
(aluminum oxide) material.
5. a kind of charge measurement method, in the state of fixture to be placed on the device to substrate execution corona treatment, grasps
Make described device, measure the electric charge accumulated on the fixture, wherein, the fixture includes base plate, dashes forward to the top of the base plate
The insulating barrier for going out and the metal level provided in the upper end of the insulating barrier；
Wherein, formed on the insulating barrier and cross the breakthrough part of upper and lower surface, the metal level formed with it is described
The corresponding hole of breakthrough part, makes the base plate and the metal level stored charge and has different current potentials.
6. charge measurement method according to claim 5, wherein, measure the voltage of the base plate and the metal level.
7. charge measurement method according to claim 5, wherein, the fixture also includes being attached to the insulating barrier position
In the auxiliary metal layer of the breakthrough part, the fixture measures the potential difference between the auxiliary metal layer.
8. charge measurement method according to claim 5, wherein, the fixture also includes being attached to the insulating barrier position
In the auxiliary metal layer of the breakthrough part, the fixture measures the voltage between the auxiliary metal layer and the base plate.
9. charge measurement method according to claim 5, wherein, the fixture also includes being attached to the insulating barrier position
In the auxiliary metal layer of the breakthrough part, the fixture measures the voltage between the auxiliary metal layer and the metal level.
10. charge measurement method according to claim 5, wherein, the fixture is provided with multiple, measurement in described device
It is accumulated in the quantity of electric charge of each fixture.
The 11. charge measurement methods according to any one of claim 5 to 9, wherein, during described device is operated in real time
Measurement is accumulated in the electric charge of the fixture.
The 12. charge measurement methods according to any one of claim 5 to 9, wherein, the breakthrough part and the hole are formed
It is the shape of the pattern formed in the substrate, makes the base plate and the metal level stored charge and there is different current potentials.
The 13. charge measurement methods according to any one of claim 5 to 9, wherein, described device with to the substrate
Corona treatment when process conditions identical conditional operation.
A kind of 14. electric charges accumulated on substrate during measurement corona treatment in the device that corona treatment is performed to substrate
The method of amount, wherein, methods described is performed using the fixture any one of claim 1-4 by described device, the side
Method includes：
Described device is provided by the fixture for being formed with the corresponding hole of pattern formed with the upper end of the substrate, with it is right
The substrate carries out identical technological operation described device during corona treatment, measures the quantity of electric charge of the fixture accumulation, its
Described in the quantity of electric charge that accumulates on substrate be to be calculated based on the quantity of electric charge measured in the fixture.
15. methods according to claim 14, wherein, the size of the fixture is less than the substrate.
16. methods according to claim 15, wherein, the fixture be provided with described device it is multiple, for measuring product
Tire out the quantity of electric charge in each fixture.
17. methods according to claim 14, wherein, during described device is operated, measurement is accumulated in the fixture in real time
Electric charge.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20120108997 | 2012-09-28 | ||
| KR10-2012-0108997 | 2012-09-28 | ||
| KR1020120158450A KR101430739B1 (en) | 2012-09-28 | 2012-12-31 | Jig and Charge determining method |
| KR10-2012-0158450 | 2012-12-31 |
Publications (2)
| Publication Number | Publication Date |
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| CN103713204A CN103713204A (en) | 2014-04-09 |
| CN103713204B true CN103713204B (en) | 2017-04-12 |
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| CN201310456550.XA Active CN103713204B (en) | 2012-09-28 | 2013-09-29 | Jig and charge determining method |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109786197B (en) * | 2019-01-21 | 2021-06-29 | 云谷（固安）科技有限公司 | Charge amount detection device and method |
Citations (4)
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|---|---|---|---|---|
| CN101316473A (en) * | 2007-05-31 | 2008-12-03 | 细美事有限公司 | Apparatus and method for treating substrate using plasma |
| CN102004195A (en) * | 2009-09-02 | 2011-04-06 | 米克罗杜尔有限公司 | Device to detect and measure static electric charge |
| CN102163606A (en) * | 2011-01-26 | 2011-08-24 | 北京大学 | Charge-detecting chip and manufacturing method thereof |
| CN102175932A (en) * | 2011-01-26 | 2011-09-07 | 北京大学 | Charge testing method in plasma environment and testing system |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3560400B2 (en) * | 1995-11-13 | 2004-09-02 | 株式会社リコー | Charge amount measuring device |
| JP5052752B2 (en) * | 2005-02-07 | 2012-10-17 | 電気化学工業株式会社 | Carrier tape peeling charge measuring device |
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2013
- 2013-09-29 CN CN201310456550.XA patent/CN103713204B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101316473A (en) * | 2007-05-31 | 2008-12-03 | 细美事有限公司 | Apparatus and method for treating substrate using plasma |
| CN102004195A (en) * | 2009-09-02 | 2011-04-06 | 米克罗杜尔有限公司 | Device to detect and measure static electric charge |
| CN102163606A (en) * | 2011-01-26 | 2011-08-24 | 北京大学 | Charge-detecting chip and manufacturing method thereof |
| CN102175932A (en) * | 2011-01-26 | 2011-09-07 | 北京大学 | Charge testing method in plasma environment and testing system |
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