CN103708414A - Method for preparing and transferring magnetic nanometer array - Google Patents

Method for preparing and transferring magnetic nanometer array Download PDF

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Publication number
CN103708414A
CN103708414A CN201310716991.9A CN201310716991A CN103708414A CN 103708414 A CN103708414 A CN 103708414A CN 201310716991 A CN201310716991 A CN 201310716991A CN 103708414 A CN103708414 A CN 103708414A
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magnetic
die plate
array
nano
metal
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CN201310716991.9A
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CN103708414B (en
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赵兰普
宋晓辉
岳鹏飞
庄春生
乔彦超
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YUKE PHYSICS CO Ltd
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YUKE PHYSICS CO Ltd
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Abstract

The invention provides a method for preparing a magnetic nanometer array and transferring the magnetic nanometer array to a metal substrate. The method includes the steps that a secondary anode oxidation method is utilized to prepare an aluminum oxide porous die plate which is not through, magnetic nano materials are deposited in holes of the die plate, the length of a deposited nanowire is controlled to make a certain unfilled depth reserved in the holes of the die plate, metal is deposited on the surface of the die plate, a continuous metal film with the nano holes is formed, thermocompression bonding is conducted on the continuous metal film and the metal substrate under certain temperature and pressure, and eventually the die plate is dissolved, and the goal of transferring the magnetic nanowire to the metal substrate is achieved. The method is simple in process and convenient to operate, compatible with the micro-electronic processing process, particularly, low-temperature bonding is achieved by the utilization of the nanoscale effect of a formed porous nanometer metal film layer, and the method has wide application prospect in the field of manufacturing of magnetic sensors based on a micro electro mechanical system.

Description

A kind of preparation of magnetic Nano array and transfer method
Technical field
The invention belongs to MEMS (MEMS) manufacture field, particularly relate to a kind of and magnetic Nano array preparation method microelectronic processing technology compatibility.
Background technology
Development along with technology of Internet of things, various high-performance magnetism sensors play an increasingly important role in fields such as automobile, biology, space flight, automations, especially the Magnetic Sensor manufacturing technology based on MEMS technology, have that volume is little, the advantage such as sensitivity and integrated level height, become future developing trend.The critical process of MEMS Magnetic Sensor manufacture is to form magnet-sensitive element, and the thin magnetic film that utilizes the method deposition pattern of electrochemistry or sputter is conventional method, but its performance indications still have larger room for promotion.Consider the one-dimensional characteristic that nano-magnetic array has, demonstrate the character different from block materials, especially giant magnetoresistance effect, giant magnetoresistance effect etc. have higher sensitivity, and preparing magnetic Nano array becomes the important research direction that magnetic sensor is manufactured.
At present, the preparation of magnetic Nano array is mainly to utilize template, on porous alumina formwork, deposit magnetic Nano material, after dissolving template, form magnetic nanowires, experiment shows that the method technique is simple, the indexs such as the nanowire length of preparation, diameter are easy to control, and show stronger magnetic property, at Magnetic Sensor manufacture view, have larger potentiality.Yet the preparation of MEMS magnetic sensor requires sensing element preparation and microelectronics manufacture compatible, the magnetic nano-array of realizing template synthesis can be transferred to substrate under proper condition, forms the firm connection of machinery and electric aspect.Existing method is more to pay close attention to the preparation technology of magnetic nanowires array itself, does not form and shifts reliably and bonding technology.Given this, on the basis of template synthesis magnetic Nano array, structure has the metal film layer of nanostructured, not only can effectively shift nano-array, and the nanostructured of metal level will effectively reduce technological temperature and pressure at the nano effect of thermocompression bonding process, for the manufacture of novel MEMS Magnetic Sensor provides new method.
Summary of the invention
The object of the present invention is to provide a kind of preparation of magnetic Nano array and the method shifting to metal substrate, utilize the porous nano metal rete forming to carry out low-temperature bonding, realize magnetic nano-array preparation technology and MEMS Magnetic Sensor manufacturing process compatible.
Preparation and the transfer method of a kind of magnetic Nano array that the present invention announces, first in the aluminum oxide porous template not connecting completely, deposit magnetic material, form magnetic Nano array, then depositing metal films in the template of not filling completely, utilize the continuous poriferous nano metal layer and the metal substrate that form to carry out low-temperature thermocompression bonding, finally dissolve template, realize nano-array and shift.Concrete scheme is: first pass through two-step anodization legal system for non-through aluminum oxide porous template, then in the hole of template, deposit magnetic Nano material, and make template hole retain necessarily not depth of cracking closure by controlling depositing nano line length, thereupon at template surface plated metal, formation has the continuous metal film of nano aperture, under uniform temperature and pressure-acting, with metal substrate, carry out thermocompression bonding, finally dissolve template, realize the transfer of magnetic Nano alignment metal substrate.
Technique of the present invention is simple, easy to operate, on the basis of template synthesis magnetic Nano array, constructed the metal film layer with nanostructured, its nanoscale effect effectively reduces technological temperature and the pressure in transfer process, meets the manufacture requirement of novel MEMS Magnetic Sensor.
Accompanying drawing explanation
Fig. 1 is magnetic Nano array preparation of the present invention and shifting process schematic diagram: (a) porous alumina formwork preparation, and wherein 1 is Woelm Alumina, 2 is metallic aluminium; (b) magnetic Nano array preparation, wherein 3 is magnetic Nano array; (c) porous continuous metal film deposition, wherein 4 is metal film; (d) thermocompression bonding technique, wherein 5 is pressure, and 6 is substrate metal layer, and 7 is silicon substrate, and 8 is hot plate; (e) after dissolving template, magnetic nano-array is transferred to substrate.
the specific embodiment
As shown in the figure, the key step of the specific embodiment of the invention comprises:
(1) by purity, be 99.999% aluminium flake, at 500 ℃, anneal 30 minutes, then in the ethanolic solution of perchloric acid, electrochemical polish is extremely bright, be placed in the sulfuric acid solution of 0.6mol/L, adopt 20V voltage to carry out once oxidation, oxidization time 1 hour, then aluminium flake is put into mass ratio and be respectively 60 ℃ of water-baths of mixed solution 20 minutes of 6% and 1.8% phosphoric acid, chromic acid, after taking-up, with distilled water, clean repeatedly, repeating secondary oxidation 2 hours afterwards, obtain aperture 50nm shown in accompanying drawing (a), the non-through alumina formwork 1 of the degree of depth 20 μ m.
(2) sample having deposited is put into magnetic control platform, adopt FeNi alloy target material, in sputter procedure, vacuum keeps 3*10- 5handkerchief, the FeNi nano wire 3 of formation length 18 μ m as shown in accompanying drawing (b).
(3) after formation nano wire, sample is placed in to magnetic control platform, adopts Cu target, pressure 1Pa, forms continuous poriferous Nanometer Copper film 4 as shown in accompanying drawing (c).
(4) adopt standard RCA technique cleaning silicon chip 7, then by sputtering technology, on silicon chip, deposit 2 μ m copper films 6, as shown in accompanying drawing (d), the metal film that the sample copper pellicular front forming in (3) is formed with this step is aimed in conjunction with being placed on hot plate 8, hot plate is warmed up to 200 ℃, then apply 2MPa pressure, heat-insulation pressure keeping 1 hour, completes thermocompression bonding.
(5) alumina formwork is dissolved to the rear magnetic Nano array shown in accompanying drawing (e) that forms.

Claims (1)

1. the preparation of a magnetic Nano array and transfer method, it is characterized in that depositing magnetic material in the aluminum oxide porous template not connecting completely, form magnetic Nano array, then depositing metal films in the template of not filling completely, utilize the continuous poriferous nano metal layer and the metal substrate that form to carry out low-temperature thermocompression bonding, finally dissolve template, realize nano-array and shift.
CN201310716991.9A 2013-12-24 2013-12-24 A kind of preparation of magnetic nanometer array and transfer method Expired - Fee Related CN103708414B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928300A (en) * 2014-04-14 2014-07-16 河南省科学院应用物理研究所有限公司 Bonding method based on multi-field coupling
CN106449448A (en) * 2016-11-29 2017-02-22 河南省科学院应用物理研究所有限公司 Low-temperature bonding method for integrated packaging of devices
CN108597710A (en) * 2018-04-13 2018-09-28 徐靖才 A kind of preparation method of samarium iron nitrogen magnetic nano-array
CN114045483A (en) * 2021-11-16 2022-02-15 哈尔滨工业大学 Method for preparing silver nano array by utilizing template to hot-press nano silver particles

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WO2009029859A2 (en) * 2007-08-31 2009-03-05 Board Of Regents, The University Of Texas Nanodisks and methods of fabrication of nanodisks
CN102431962A (en) * 2011-12-07 2012-05-02 北京航空航天大学 Preparation method and application of nanoimprint template
CN103278662A (en) * 2013-05-10 2013-09-04 福州大学 Nano-nickel rod array atomic force microscope tip characterization sample and manufacturing method thereof

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WO2009029859A2 (en) * 2007-08-31 2009-03-05 Board Of Regents, The University Of Texas Nanodisks and methods of fabrication of nanodisks
CN102431962A (en) * 2011-12-07 2012-05-02 北京航空航天大学 Preparation method and application of nanoimprint template
CN103278662A (en) * 2013-05-10 2013-09-04 福州大学 Nano-nickel rod array atomic force microscope tip characterization sample and manufacturing method thereof

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928300A (en) * 2014-04-14 2014-07-16 河南省科学院应用物理研究所有限公司 Bonding method based on multi-field coupling
CN103928300B (en) * 2014-04-14 2016-06-01 河南省科学院应用物理研究所有限公司 A kind of bonding method based on multi-scenarios method
CN106449448A (en) * 2016-11-29 2017-02-22 河南省科学院应用物理研究所有限公司 Low-temperature bonding method for integrated packaging of devices
CN106449448B (en) * 2016-11-29 2019-05-07 河南省科学院应用物理研究所有限公司 A kind of low-temperature bonding method for device integration packaging
CN108597710A (en) * 2018-04-13 2018-09-28 徐靖才 A kind of preparation method of samarium iron nitrogen magnetic nano-array
CN108597710B (en) * 2018-04-13 2019-08-30 中国计量大学 A kind of preparation method of samarium iron nitrogen magnetic nano-array
CN114045483A (en) * 2021-11-16 2022-02-15 哈尔滨工业大学 Method for preparing silver nano array by utilizing template to hot-press nano silver particles
CN114045483B (en) * 2021-11-16 2023-10-20 哈尔滨工业大学 Method for preparing silver nano array by hot-pressing nano silver particles through template

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