CN103693615B - Germanium nanowire structure manufacturing method - Google Patents
Germanium nanowire structure manufacturing method Download PDFInfo
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- CN103693615B CN103693615B CN201310741573.5A CN201310741573A CN103693615B CN 103693615 B CN103693615 B CN 103693615B CN 201310741573 A CN201310741573 A CN 201310741573A CN 103693615 B CN103693615 B CN 103693615B
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Abstract
The invention discloses a germanium nanowire structure manufacturing method including the steps of cleaning a germanium substrate or a substrate deposited with germanium film, performing photo-etching and etching to the surface of the substrate to obtain a germanium wire structure, depositing capping oxide or nitride sidewall material on the surface of the germanium wire structure, removing the sidewall material covering between germanium wires by anisotropic etching to obtain germanium wires with three surfaces covered by the sidewall material, placing the germanium wires with three surfaces covered by the sidewall material in pure oxygen or oxygen contained mixture gas, controlling oxygen tension and reaction temperature by regulating gas flow, thereby obtaining the germanium nanowire structure. The germanium nanowire structure has the advantages that large-area growth can be achieved, the process is simple and convenient, the diameter of the nanowires is controllable, and the manufacturing cost is low and the like.
Description
Technical field
The present invention relates to field of semiconductor integration technology, particularly a kind of preparation method of Germanium nanowire structure.
Background technology
Semiconductor technology, as the core of information industry and basis, is the important symbol of measurement national science technological progress and overall national strength.In in the past more than 40 year, silica-based integrated technology is followed Moore's Law and is improved operating rate, the increase integrated level of device by the characteristic size of reduction of device and reduce costs, and the characteristic size of silicon base CMOS device narrows down to nanoscale by micro-meter scale.But when the grid length of MOS device narrows down to below 90 nanometers, the thickness of gate medium (silica) has been reduced to gradually close to 1 nanometer, the physics limits such as OFF state electric leakage increase, power dissipation density increase, mobil-ity degradation make device performance degradation, and traditional microelectronic integrated technology starts the double challenge faced from physics and technical elements.
From material aspect, adopting high mobility material to substitute traditional silicon material as backing material will be the important development direction of semiconductor integration technology.Because the hole mobility 1900cm of germanium (Ge)
2/ Vs and electron mobility 3900cm
2/ Vs is significantly higher than silicon materials, so germanium (Ge) is considered to be expected to replace silicon materials to adapt to the demand of the following logical device of 22 nanometer.On the other hand, from device microstructure, in order to improve the control ability of grid to channel carrier concentration further, the three-dimensional structure being representative with fin-shaped grid, nano wire, by replacing traditional planar structure, becomes the predominate architecture of below 22 nanometer nodes.Based on above 2 points, germanium nano-micro structure will play in future and more importantly act on.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is the preparation method providing a kind of Germanium nanowire structure, with solve Ge nanoline anisotropic etching difficulty, complicated process of preparation, cannot large area deposition, problem that process costs is high, reach prepare Ge nanoline can large area deposition, simple process, nanowire diameter is controlled and preparation cost is low object.
(2) technical scheme
For achieving the above object, the invention provides a kind of preparation method of Germanium nanowire structure, the method comprises: germanium substrate or the substrate that deposits germanium film are cleaned, carry out photoetching and etching, obtain germanium linear to its surface; In germanium linear surface deposition capping oxide or nitride spacer material; Utilize anisotropic etching method, get rid of the spacer material covered between germanium lines, obtain the germanium lines that three bread cover spacer material; And the germanium lines this three bread being covered spacer material are placed in purity oxygen or containing the mist of oxygen, by adjusting gas flow ratio and then control oxygen partial pressure and reaction temperature, obtain Germanium nanowire structure.
In such scheme, described germanium film is monocrystalline germanium, amorphous germanium or polycrystalline germanium, the described substrate depositing germanium film is silicon, GaAs, sapphire, carborundum, indium phosphide, the silicon substrate being coated with crystalline oxides or gallium arsenide substrate, and the composite construction of above-mentioned substrate.
In such scheme, in described germanium linear, the width of germanium lines is 5 ~ 5000 nanometers, and lines height is 5 ~ 5000 nanometers, and length is 5 nanometer ~ 50 centimetre.
In such scheme, described oxide or nitride spacer material, not easily react with germanium material between 400 ~ 700 degrees Celsius, comprises silica, aluminium oxide, yittrium oxide, silicon nitride, aluminium nitride, silicon oxynitride or aluminum oxynitride.
In such scheme, described in germanium linear surface deposition capping oxide or nitride spacer material, be adopt chemical vapour deposition technique (CVD) or atomic layer deposition method (ALD).
In such scheme, the described germanium lines this three bread being covered spacer material are placed in purity oxygen or the mist containing oxygen, except containing except oxygen in this mist, also contain: nitrogen (N
2), argon gas (Ar), helium (He) or neon (Ne), or containing the mist of above-mentioned gas.
In such scheme, the described germanium lines this three bread being covered spacer material are placed in purity oxygen or the mist containing oxygen, and reactant is germanium and oxygen, under certain reaction atmosphere and reaction temperature control, reaction product is the germanium monoxide of gaseous state, and reaction does not generate germanium dioxide; Reaction atmosphere is purity oxygen or the mist containing oxygen.
In such scheme, described adjusting gas flow ratio and then control oxygen partial pressure and reaction temperature regulates oxygen partial pressure interval to 0.01-10 Pascal.
In such scheme, when oxygen partial pressure is between 0.01-0.1 Pascal, reaction temperature is adjusted to 500-650 degree Celsius of interval; When oxygen partial pressure is between 0.1-10 Pascal, reaction temperature is adjusted to 550-700 degree Celsius of interval.Described partial pressure of oxygen is obtained by the method for mixture of oxygen and inert gas, first heating cavity is evacuated to partial pressure of oxygen and is less than 10
-3pascal, then controls to pass into oxygen or the mist containing oxygen to vacuum cavity inside by flowmeter, oxygen partial pressure is reached between 0.01 to 10 Pascal.
(3) beneficial effect
For wet etching, ion and the hydrone of extra introducing may cause harmful effect to device performance.The preparation method of this Germanium nanowire structure provided by the invention, the preparation that simple heated oxide realizes Ge nanoline is carried out by the germanium lines coated to three side walls, stop introducing foreign ion on the one hand, avoid the damage that ion etching causes on the other hand, and have advantage with low cost concurrently, thus there is very important using value and economic worth, the accurate control of germanium nano-micro structure size in sub-22 nanometers and above node can be realized, significant.In addition, the preparation method of Germanium nanowire structure provided by the invention, oxide etch is carried out because the covering by three side walls only reserves bottom surface, avoid the difficulty of Ge nanoline anisotropic etching, significantly decrease processing step, reduce process costs, reduce the deviation that Ge nanoline grown on larger scale produces, so solve Ge nanoline anisotropic etching difficulty, complicated process of preparation, cannot large area deposition, the problem that process costs is high, reach prepare Ge nanoline can large area deposition, simple process, the object that nanowire diameter is controlled and preparation cost is low.
Accompanying drawing explanation
Fig. 1 is the method flow diagram of making Germanium nanowire structure provided by the invention;
Fig. 2 to Fig. 6 is the process chart of the making Germanium nanowire structure according to the embodiment of the present invention; Wherein:
Fig. 2 is the schematic diagram of silicon germanium substrat structure;
Fig. 3 is through etching the silicon germanium lines schematic diagram obtained;
Fig. 4 is the figure of all standing silicon nitride utilizing plasma enhanced chemical vapor deposition method to obtain;
Fig. 5 is the schematic diagram utilizing ICP lithographic technique to get rid of silicon nitride between lines;
Fig. 6 is the schematic diagram that germanium bottom germanium lines is got rid of in 600 degree of heating under 0.1Pa oxygen partial pressure condition.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The invention provides a kind of method making Germanium nanowire structure, the method, by germanium substrate or based on the germanium film substrate of other substrate, by the method controlling deposition, etching and be oxidized, prepares Germanium nanowire structure.Germanium nanowire structure provided by the invention and preparation method thereof, having can the advantage such as the controlled and preparation cost of large area deposition, simple process, nanowire diameter is low.
As shown in Figure 1, Fig. 1 is the method flow diagram of making Germanium nanowire structure provided by the invention, and the method comprises the following steps:
Step 1: germanium substrate or the substrate that deposits germanium film are cleaned, photoetching and etching is carried out to its surface, obtains germanium linear;
Step 2: in germanium linear surface deposition capping oxide or nitride spacer material;
Step 3: utilize anisotropic etching method, gets rid of the spacer material covered between germanium lines, obtains the germanium lines that three bread cover spacer material;
Step 4: the germanium lines this three bread being covered spacer material are placed in purity oxygen or the mist containing oxygen, by adjusting gas flow ratio and then control oxygen partial pressure and reaction temperature, obtains Germanium nanowire structure.
Germanium film described in step 1 is monocrystalline germanium, amorphous germanium or polycrystalline germanium, the described substrate depositing germanium film is silicon, GaAs, sapphire, carborundum, indium phosphide, the silicon substrate being coated with crystalline oxides or gallium arsenide substrate, and the composite construction of above-mentioned substrate.In described germanium linear, the width of germanium lines is 5 ~ 5000 nanometers, and lines height is 5 ~ 5000 nanometers, and length is 5 nanometer ~ 50 centimetre.
Oxide described in step 2 or nitride spacer material, not easily react with germanium material between 400 ~ 700 degrees Celsius, comprises silica, aluminium oxide, yittrium oxide, silicon nitride, aluminium nitride, silicon oxynitride or aluminum oxynitride.Described in germanium linear surface deposition capping oxide or nitride spacer material, be adopt chemical vapour deposition technique (CVD) or atomic layer deposition method (ALD).
The germanium lines described in step 4, this three bread being covered spacer material are placed in purity oxygen or the mist containing oxygen, except containing except oxygen in this mist, also contain: nitrogen (N
2), argon gas (Ar), helium (He) or neon (Ne), or containing the mist of above-mentioned gas.
The germanium lines described in step 4, this three bread being covered spacer material are placed in purity oxygen or the mist containing oxygen, reactant is germanium and oxygen, under certain reaction atmosphere and reaction temperature control, reaction product is the germanium monoxide of gaseous state, and reaction does not generate germanium dioxide; Reaction atmosphere is purity oxygen or the mist containing oxygen.
The ratio of adjusting gas flow described in step 4 and then control oxygen partial pressure and reaction temperature regulates oxygen partial pressure interval to 0.01-10 Pascal.When oxygen partial pressure is between 0.01-0.1 Pascal, reaction temperature is adjusted to 500-650 degree Celsius of interval; When oxygen partial pressure is between 0.1-10 Pascal, reaction temperature is adjusted to 550-700 degree Celsius of interval.Described partial pressure of oxygen is obtained by the method for mixture of oxygen and inert gas, first heating cavity is evacuated to partial pressure of oxygen and is less than 10
-3pascal, then controls to pass into oxygen or the mist containing oxygen to vacuum cavity inside by flowmeter, oxygen partial pressure is reached between 0.01 to 10 Pascal.
Based on the method flow diagram of the making Germanium nanowire structure shown in Fig. 1, Fig. 2 to Fig. 6 is the process chart of the making Germanium nanowire structure according to the embodiment of the present invention, specifically comprises the following steps:
As shown in Figure 2, the substrate having high-quality (100) germanium 102 in the surperficial extension of (100) silicon substrate 101 is selected.Wherein the thickness of epitaxial germanium layer is 50 nanometers.
As shown in Figure 3, utilize electron beam lithography and utilize inductively coupled plasma etching (ICP) lithographic technique to utilize SF
6the structure of Fig. 2 etches the groove that the degree of depth is 30 nanometers, thus obtains height 30 nanometers, the germanium lines 201 of width 20 nanometer, line pitch is 100 nanometers.
As shown in Figure 4, utilize plasma enhanced chemical gas phase substrate approach, shown in Fig. 3, body structure surface deposits the silicon nitride medium 301 that a layer thickness is 20 nanometers.
As shown in Figure 5, utilize ICP lithographic technique, in conjunction with photoetching method, protect the end face of germanium lines, utilize CF further
4/ O
2under high bias condition, get rid of the silicon nitride between two germanium lines, and retain the silicon nitride of side wall, thus form the germanium lines 402 that three bread cover silicon nitride 401.
As shown in Figure 6, Fig. 5 structure is placed in vacuum cavity, utilizes molecular pump to be evacuated to by cavity and be less than 5 × 10
-3pascal, closure molecule pump.Be filled with nitrogen and dilution oxygen (oxygen: nitrogen=1: 9) simultaneously; wherein dilution oxygen flow is 0.25sccm; the flow of nitrogen is 250sccm; and by standard atmospheric pressure protective valve, inside cavity is discharged in outside air higher than an atmospheric part, thus obtain the condition that oxygen partial pressure is 0.1Pa.Be oxidized under 600 degrees celsius, along with the carrying out of reaction, after 30 minutes, in Fig. 6, do not formed germanium monoxide steam with oxygen reaction gradually by the part 503 that silicon nitride is coated, thus obtain Germanium nanowire structure 502 as shown in Figure 6.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a preparation method for Germanium nanowire structure, is characterized in that, the method comprises:
Germanium substrate or the substrate that deposits germanium film are cleaned, photoetching and etching is carried out to its surface, obtains germanium linear;
In germanium linear surface deposition capping oxide or nitride spacer material;
Utilize anisotropic etching method, get rid of the spacer material covered between germanium lines, obtain the germanium lines that three bread cover spacer material; And
The germanium lines this three bread being covered spacer material are placed in purity oxygen or the mist containing oxygen, by adjusting gas flow ratio and then control oxygen partial pressure and reaction temperature, obtain Germanium nanowire structure;
Wherein, the described germanium lines three bread being covered spacer material are placed in purity oxygen or the mist containing oxygen, and reactant is germanium and oxygen, under certain reaction atmosphere and reaction temperature control, reaction product is the germanium monoxide of gaseous state, and reaction does not generate germanium dioxide; Reaction atmosphere is purity oxygen or the mist containing oxygen;
Described adjusting gas flow ratio and then control oxygen partial pressure and reaction temperature regulates oxygen partial pressure interval to 0.01-10 Pascal; When oxygen partial pressure is between 0.01-0.1 Pascal, reaction temperature is adjusted to 500-650 degree Celsius of interval; When oxygen partial pressure is between 0.1-10 Pascal, reaction temperature is adjusted to 550-700 degree Celsius of interval.
2. the preparation method of Germanium nanowire structure according to claim 1, it is characterized in that, described germanium film is monocrystalline germanium, amorphous germanium or polycrystalline germanium, the described substrate depositing germanium film is silicon, GaAs, sapphire, carborundum, indium phosphide, the silicon substrate being coated with crystalline oxides or gallium arsenide substrate, and the composite construction of above-mentioned substrate.
3. the preparation method of Germanium nanowire structure according to claim 1, is characterized in that, in described germanium linear, the width of germanium lines is 5 ~ 5000 nanometers, and lines height is 5 ~ 5000 nanometers, and length is 5 nanometer ~ 50 centimetre.
4. the preparation method of Germanium nanowire structure according to claim 1, it is characterized in that, described oxide or nitride spacer material, not easily react with germanium material between 400 ~ 700 degrees Celsius, comprise silica, aluminium oxide, yittrium oxide, silicon nitride, aluminium nitride, silicon oxynitride or aluminum oxynitride.
5. the preparation method of Germanium nanowire structure according to claim 1, it is characterized in that, described in germanium linear surface deposition capping oxide or nitride spacer material, be adopt chemical vapour deposition technique (CVD) or atomic layer deposition method (ALD).
6. the preparation method of Germanium nanowire structure according to claim 1, it is characterized in that, the described germanium lines this three bread being covered spacer material are placed in purity oxygen or the mist containing oxygen, except containing except oxygen in this mist, also contain: nitrogen (N
2), argon gas (Ar), helium (He) or neon (Ne), or containing the mist of above-mentioned gas.
7. the preparation method of Germanium nanowire structure according to claim 1, is characterized in that, described oxygen partial pressure is obtained by the method for mixture of oxygen and inert gas, first heating cavity is evacuated to oxygen partial pressure and is less than 10
-3pascal, then controls to pass into oxygen or the mist containing oxygen to vacuum cavity inside by flowmeter, oxygen partial pressure is reached between 0.01 to 10 Pascal.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102569027A (en) * | 2011-12-05 | 2012-07-11 | 中国科学院微电子研究所 | Method for controlling size of germanium nanometer microstructure |
| CN103377937A (en) * | 2012-04-24 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | Forming method of semiconductor structures and forming method of transistors |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102569027A (en) * | 2011-12-05 | 2012-07-11 | 中国科学院微电子研究所 | Method for controlling size of germanium nanometer microstructure |
| CN103377937A (en) * | 2012-04-24 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | Forming method of semiconductor structures and forming method of transistors |
Non-Patent Citations (1)
| Title |
|---|
| Germanium Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated by Complementary-Metal–Oxide–Semiconductor-Compatible Process;J. W. Peng et al.;《IEEE TRANSACTIONS ON ELECTRON DEVICES》;20110131;第58卷(第1期);第74-79页 * |
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Application publication date: 20140402 Assignee: Beijing Eaststar Application Physics Institute Assignor: Institute of Microelectronics, Chinese Academy of Sciences Contract record no.: X2023990000789 Denomination of invention: A Manufacturing Method for Ge Nanowire Structure Granted publication date: 20150401 License type: Common License Record date: 20230901 |
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