CN103683346A - Low-voltage vanadium battery discharge galvanostat - Google Patents
Low-voltage vanadium battery discharge galvanostat Download PDFInfo
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- CN103683346A CN103683346A CN201210335209.4A CN201210335209A CN103683346A CN 103683346 A CN103683346 A CN 103683346A CN 201210335209 A CN201210335209 A CN 201210335209A CN 103683346 A CN103683346 A CN 103683346A
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Abstract
The invention discloses a low-voltage vanadium battery discharge galvanostat. The low-voltage vanadium battery discharge galvanostat comprises two field-effect tubes, a triode, an amplifier, ten resistors, a discharge power supply and an amplifier power supply which respectively form a constant current circuit, a discharge circuit, a driving circuit and a sampling circuit. When the galvanostat is operated, discharge preset current signals are input at the positive input terminal of the constant current circuit, simultaneously voltage signals of a vanadium battery are input to the negatives input terminal of the constant current circuit through the resistors of the sampling circuit, and after being respectively conducted to comparison amplification through the amplifier of the constant current circuit, the signals are input into the discharge circuit consisting of the two field-effect tubes and the resistors and the driving circuit consisting of the triode and the resistors, so that the purpose of constant current discharge during the process of vanadium battery detection is realized. The galvanostat realizes constant current and low noise discharge during the process of vanadium battery detection through the field-effect tubes, and simultaneously has the advantages of low power consumption, high stability, simple structure and low cost.
Description
Technical field
The present invention relates to a kind of electric discharge device for battery detecting process, relate in particular to a kind of electric discharge galvanostat for low pressure vanadium cell testing process.
Background technology
Vanadium cell full name is vanadium redox battery (Vanadium Redox Battery, is abbreviated as VRB), is that a kind of active material is and circulates liquid redox cell, progressively enters the commercialization stage at present.Vanadium cell, as a kind of energy storage technology of chemistry, is compared with traditional lead-acid battery, nickel-cadmium cell, and it has many unique distinctions in design, is also applicable to multiple industrial occasions in performance, such as substituting oil machine, stand-by power supply etc.Vanadium cell is that monocell forms by two electrolysis liquid pools and battery unit from level to level.Electrolysis liquid pool is for containing two kinds of different electrolyte.Each battery unit is comprised of two " half-cells ", sandwich barrier film and for the electrode of collected current.In two different " half-cells ", holding the electrolyte of the vanadium of different ions form.Each electrolysis liquid pool is furnished with a pump, for the pipeline in sealing, is each " half-cell " conveying electrolyte.When charged electrolyte flows in battery unit from level to level, electronics just flow to external circuit, Here it is discharge process.When from outside by electron transport during to inside battery, contrary process has just occurred, Here it is gives the charging of the electrolyte in monocell, and then is transmitted back to electrolysis liquid pool by pump.In VRB, electrolyte flows between a plurality of monocells, and voltage is that each single battery voltage series connection forms.
Vanadium cell needs to discharge and recharge processing in testing process, wherein in discharge process, whether current constant be there are certain requirements, if electric current is non-constant, can cause the damage of battery, shortens the life-span of vanadium cell.Existing vanadium cell discharge control device, be complex structure, control device with high costs, such as the discharge control device for high pressure vanadium cell, or do not adopt discharge control device, cause low pressure vanadium cell impaired in discharge process, shortened the life-span of low pressure vanadium cell.
Summary of the invention
Object of the present invention provides a kind of low pressure vanadium cell electric discharge galvanostat with regard to being in order to address the above problem.
The present invention is achieved through the following technical solutions above-mentioned purpose:
Low pressure vanadium cell electric discharge galvanostat of the present invention comprises the first field effect transistor, the second field effect transistor, triode, amplifier, the first resistance, the second resistance, the 3rd resistance, the 4th resistance, the 5th resistance, the 6th resistance, the 7th resistance, the 8th resistance, the 9th resistance, the tenth resistance, discharge power supply and amplifier power supply, the positive pole of described low pressure vanadium cell is connected with the drain electrode of described the second field effect transistor with the source electrode of described the first field effect transistor respectively, the drain electrode of described the first field effect transistor is connected with the positive pole of described discharge power supply, the grid of described the first field effect transistor is connected with the first end of the 8th resistance with the first end of the 3rd resistance respectively, the second end ground connection of described the 8th resistance, the second end of described the 3rd resistance is connected with the first end of described the 4th resistance with the output of described amplifier respectively, the positive signal input of described amplifier is connected with the first end of described the first resistance, the given current signal of the second end input electric discharge of described the first resistance, the negative signal input of described amplifier is connected with the first end of described the second resistance, the second end of described the 4th resistance is connected with the base stage of described triode, the collector electrode of described triode is connected with the first end of the 6th resistance with the first end of described the 5th resistance of difference, the second end of described the 5th resistance and the cathode power supply input of amplifier are all connected with the positive pole of described amplifier power supply, the second end of described the 6th resistance is connected with the grid of described the second field effect transistor with the first end of described the 9th resistance respectively, the second end of described the 9th resistance is all connected with the negative pole of described discharge power supply with the source electrode of described the second field effect transistor, the emitter of described triode is connected with the first end of described the 7th resistance, the second end of described the 7th resistance and the negative power supply input of described amplifier are all connected with the negative pole of described amplifier power supply, the second end of described the second resistance is connected with the negative pole of described low pressure vanadium cell with the first end of described the tenth resistance respectively, the second end ground connection of described the tenth resistance.
During work, the given current signal of positive input terminal input electric discharge at constant-current control circuit, by the resistance of sample circuit, the voltage signal of vanadium cell is inputted to the negative input end of constant-current control circuit simultaneously, after the amplifier of constant-current control circuit relatively amplifies respectively by signal, be input to the discharge circuit being formed by two field effect transistor and resistance and in the drive circuit being formed by triode and resistance, realize the object of constant-current discharge in vanadium cell testing process.
Beneficial effect of the present invention is:
Constant current, low noise that the present invention realizes in vanadium cell testing process by field effect transistor are discharged, and have advantages of that power consumption is little, stability is strong, simple in structure, with low cost simultaneously.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of low pressure vanadium cell electric discharge galvanostat of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described:
As shown in Figure 1, low pressure vanadium cell electric discharge galvanostat of the present invention comprises the first field effect transistor FET1, the second field effect transistor FET2, triode VT, amplifier IC, the first resistance R 1, the second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the 7th resistance R 7, the 8th resistance R 8, the 9th resistance R 9, the tenth resistance R 10, discharge power supply (the anodal VC and the negative pole VD that comprise discharge power supply) and amplifier power supply (the anodal V+ and the negative pole V-that comprise amplifier power supply), the positive pole of low pressure vanadium cell E is connected with the drain electrode of the second field effect transistor FET2 with the source electrode of the first field effect transistor FET1 respectively, the drain electrode of the first field effect transistor FET1 is connected with the anodal VC of discharge power supply, the grid of the first field effect transistor FET1 is connected with the first end of the 8th resistance R 8 with the first end of the 3rd resistance R 3 respectively, the second end ground connection of the 8th resistance R 8, the second end of the 3rd resistance R 3 is connected with the first end of the 4th resistance R 4 with the output of amplifier IC respectively, the positive signal input of amplifier IC is connected with the first end of the first resistance R 1, the given current signal Vi of the second end input electric discharge of the first resistance R 1, the negative signal input of amplifier IC is connected with the first end of the second resistance R 2, the second end of the 4th resistance R 4 is connected with the base stage of triode VT, the collector electrode of triode VT is connected with the first end of the 6th resistance R 6 with the first end of difference the 5th resistance R 5, the second end of the 5th resistance R 5 is all connected with the anodal V+ of amplifier power supply with the cathode power supply input of amplifier IC, the second end of the 6th resistance R 6 is connected with the grid of the second field effect transistor FET2 with the first end of the 9th resistance R 9 respectively, the second end of the 9th resistance R 9 is all connected with the negative pole VD of discharge power supply with the source electrode of the second field effect transistor FET2, the emitter of triode VT is connected with the first end of the 7th resistance R 7, the second end of the 7th resistance R 7 is all connected with the negative pole V-of amplifier power supply with the negative power supply input of amplifier IC, the second end of the second resistance R 2 is connected with the negative pole of low pressure vanadium cell E with the first end of the tenth resistance R 10 respectively, the second end ground connection of the tenth resistance R 10.
As shown in Figure 1, the course of work of low pressure vanadium cell electric discharge galvanostat of the present invention is as follows:
In low pressure vanadium cell E when electric discharge,, the given current signal Vi that discharges is for negative, and amplifier IC exports negative voltage signal, adds to the grid of the first field effect transistor FET1 through the 3rd resistance R 3, because the voltage of low pressure vanadium cell E is positive voltage, so the first field effect transistor FET1 cut-off, the negative voltage signal of amplifier IC output also adds to the base stage of triode VT through the 4th resistance R 4, triode VT enters adjustment magnifying state, make the second field effect transistor FET2 enter conducting state, low pressure vanadium cell E is by the second field effect transistor FET2 and the tenth resistance R 10 electric discharges, discharging current I produces a voltage to earth Vf while flowing through the tenth resistance R 10, now voltage to earth Vf is negative voltage, the negative signal input that feeds back to amplifier IC through the second resistance R 2 is inverting input, amplifier IC exports different magnitudes of voltage by the difference of relatively discharge given current signal Vi and voltage to earth Vf, adjust the angle of flow of the first field effect transistor FET1, change the magnitude of voltage of the anodal VC of discharge power supply, adjust the angle of flow of the second field effect transistor FET2, thereby assurance discharging current I's is constant.
Claims (1)
1. low pressure vanadium cell electric discharge galvanostat, it is characterized in that: comprise the first field effect transistor, the second field effect transistor, triode, amplifier, the first resistance, the second resistance, the 3rd resistance, the 4th resistance, the 5th resistance, the 6th resistance, the 7th resistance, the 8th resistance, the 9th resistance, the tenth resistance, discharge power supply and amplifier power supply, the positive pole of described low pressure vanadium cell is connected with the drain electrode of described the second field effect transistor with the source electrode of described the first field effect transistor respectively, the drain electrode of described the first field effect transistor is connected with the positive pole of described discharge power supply, the grid of described the first field effect transistor is connected with the first end of the 8th resistance with the first end of the 3rd resistance respectively, the second end ground connection of described the 8th resistance, the second end of described the 3rd resistance is connected with the first end of described the 4th resistance with the output of described amplifier respectively, the positive signal input of described amplifier is connected with the first end of described the first resistance, the given current signal of the second end input electric discharge of described the first resistance, the negative signal input of described amplifier is connected with the first end of described the second resistance, the second end of described the 4th resistance is connected with the base stage of described triode, the collector electrode of described triode is connected with the first end of the 6th resistance with the first end of described the 5th resistance of difference, the second end of described the 5th resistance and the cathode power supply input of amplifier are all connected with the positive pole of described amplifier power supply, the second end of described the 6th resistance is connected with the grid of described the second field effect transistor with the first end of described the 9th resistance respectively, the second end of described the 9th resistance is all connected with the negative pole of described discharge power supply with the source electrode of described the second field effect transistor, the emitter of described triode is connected with the first end of described the 7th resistance, the second end of described the 7th resistance and the negative power supply input of described amplifier are all connected with the negative pole of described amplifier power supply, the second end of described the second resistance is connected with the negative pole of described low pressure vanadium cell with the first end of described the tenth resistance respectively, the second end ground connection of described the tenth resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210335209.4A CN103683346A (en) | 2012-09-12 | 2012-09-12 | Low-voltage vanadium battery discharge galvanostat |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210335209.4A CN103683346A (en) | 2012-09-12 | 2012-09-12 | Low-voltage vanadium battery discharge galvanostat |
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| CN103683346A true CN103683346A (en) | 2014-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210335209.4A Pending CN103683346A (en) | 2012-09-12 | 2012-09-12 | Low-voltage vanadium battery discharge galvanostat |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011049103A1 (en) * | 2009-10-20 | 2011-04-28 | 国立大学法人東北大学 | Vanadium cell |
| CN202103464U (en) * | 2011-05-05 | 2012-01-04 | 无锡三石电子有限公司 | Constant-voltage constant-current charging circuit having surge current suppressing function |
| CN202872403U (en) * | 2012-09-12 | 2013-04-10 | 成都天宇创新科技有限公司 | A low-voltage vanadium battery discharging galvanostat |
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2012
- 2012-09-12 CN CN201210335209.4A patent/CN103683346A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011049103A1 (en) * | 2009-10-20 | 2011-04-28 | 国立大学法人東北大学 | Vanadium cell |
| CN202103464U (en) * | 2011-05-05 | 2012-01-04 | 无锡三石电子有限公司 | Constant-voltage constant-current charging circuit having surge current suppressing function |
| CN202872403U (en) * | 2012-09-12 | 2013-04-10 | 成都天宇创新科技有限公司 | A low-voltage vanadium battery discharging galvanostat |
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Application publication date: 20140326 |