CN103681975B - Method for manufacturing CIGS solar cell - Google Patents
Method for manufacturing CIGS solar cell Download PDFInfo
- Publication number
- CN103681975B CN103681975B CN201310740599.8A CN201310740599A CN103681975B CN 103681975 B CN103681975 B CN 103681975B CN 201310740599 A CN201310740599 A CN 201310740599A CN 103681975 B CN103681975 B CN 103681975B
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- cushion
- cigs
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000004544 sputter deposition Methods 0.000 claims abstract description 21
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 14
- 239000011733 molybdenum Substances 0.000 claims abstract description 14
- 238000007747 plating Methods 0.000 claims abstract description 5
- 238000005520 cutting process Methods 0.000 claims abstract description 4
- 238000005538 encapsulation Methods 0.000 claims abstract description 4
- 239000013077 target material Substances 0.000 claims description 14
- 238000010521 absorption reaction Methods 0.000 claims description 13
- 239000000843 powder Substances 0.000 claims description 6
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 4
- 241000251468 Actinopterygii Species 0.000 claims description 3
- 239000005361 soda-lime glass Substances 0.000 claims description 3
- 230000003139 buffering effect Effects 0.000 abstract 3
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a CIGS solar cell, in particular to a method for manufacturing the CIGS solar cell. The method for manufacturing the CIGS solar cell comprises the steps of sputtering a molybdenum electrode layer on a substrate, arranging the substrate provided with the molybdenum electrode layer in a vacuum chamber, forwards pushing the substrate, sputtering a CIGS absorbing layer on the substrate, reversely pushing the substrate, sputtering a CdS buffering layer on the absorbing layer, plating a ZnO conductive oxidation layer on the buffering layer, plating an AZO layer on the conductive oxidation layer and performing cutting and encapsulation. The absorbing layer is sputtered through forward movement of the substrate. The buffering layer is sputtered through reverse movement of the substrate, and the production efficiency is improved. In addition, a space is saved, and the production cost is reduced. By adopting the method for manufacturing the CIGS solar cell, sputtering of the CIGS absorbing layer is effectively controlled, the thickness of each layer is accurately controlled, and the quality of produced products is good.
Description
Technical field
The present invention relates to the preparation method of cigs solaode.
Background technology
In recent years, photovoltaic industry assumes the trend of accelerated development, and the feature of development is: yield increases, and transformation efficiency improves,
Cost reduces, and application constantly expands.Compared with before 10 years, solaode price is greatly lowered.It is contemplated that with
The progress of technology and the expansion in market, light cell cost and price will decline to a great extent.After 2010, due to solaode
The decline of cost is it is expected to make photovoltaic technology enter extensive development period.With the progress of technology, the sending out of thin-film solar cells
Exhibition will be maked rapid progress, and will step up in the market share of following photovoltaic market.As the best thin-film solar cells of performance,
Cigs thin-film solar cells also will welcome fast-developing period.Existing cigs (CIGS) solaode includes base
Plate, has several layer films in substrate surface deposition.The cigs thin-film solar cells that prior art produces are due to the process control time
Longer, its production efficiency is not high, and quality of forming film is not high.
Wherein, the most key is cigs absorbed layer, and it is the core of solaode, the preparation method of absorbed layer
Steam selenizing method after method and magnetron sputtering as polynary altogether.Method of steaming altogether respectively has different fusing points due to the element different using four kinds,
Make to control formation on large substrate for the stoichiometric compound to be highly difficult.At present, market has one kind by splashing
Penetrate the method that method directly prepares absorbed layer and cushion, the method that it adopts is so that substrate circumference is run, and passes through to splash outside circumference
The method of penetrating makes to be formed absorbed layer and cushion on substrate.This method sputters due to using level, due to the effect of gravity, its
On substrate, the absorbed layer of deposition and cushion are not uniform, the quality of impact battery.
Content of the invention
For above-mentioned technical problem, a kind of production efficiency of present invention offer is higher, quality of forming film preferable cigs solar energy
The preparation method of battery.
The present invention solves above-mentioned technical problem and the technical scheme is that a kind of method preparing cigs solaode,
It comprises the following steps:
(1) sputter molybdenum electrode layer on substrate；
(2) substrate with molybdenum electrode layer is placed in vacuum interior, and positive promotion substrate, on substrate, sputter cigs inhales
Receive layer；
(3) substrate, sputter cds cushion on absorbed layer are reversely promoted；
(4) will there is the substrate of cushion from vacuum interior taking-up, and plate zno conductive oxide layer on the buffer layer；
(5) azo layer is plated on conductive oxide layer；
(6) cutting encapsulation.
Preferably, described substrate is using alkaline soda-lime glass.
Preferably, described molybdenum electrode layer surface is in fish scale-shaped, thickness is 0.5--1.5 μm.
Preferably, being provided with absorption layer target material, cushion target and and target in indoor being located on the upside of substrate of described vacuum
The corresponding sputtering source of material, sputtering source passes through to bombard two targets respectively, sputter absorbed layer and cushion on substrate.
Preferably, described absorption layer target material and cushion target are arranged on same rotary body, a rotating body is provided with
Sputtering source, switches absorption layer target material and cushion target by rotating rotary body.
Preferably, described absorption layer target material is formed by the compacting of cigs powder.
Preferably, by cucl2、incl3、gacl3、na2Described cigs powder is synthesized in se addition ethylenediamine.
Preferably, the thickness of described absorbed layer is 1.5--2.0 μm, the thickness of cushion is 0.05 μm.
Preferably, described conductive oxide layer adopts magnetic control sputtering plating method to prepare, its thickness is 0.05 μm.
Preferably, azo thickness degree is 0.5--1.5 μm.
The present invention compared with prior art has the advantage that
1st, the present invention passes through positive mobile, the sputter absorbed layer of substrate；Substrate moves backward, and sputter cushion not only carries
High production efficiency, and save space, reduce production cost.
2nd, the effective control of the present invention sputter of cigs absorbed layer, and the precise control thickness of each layer, the product of production
Quality is good.
3rd, using single target sputtering method sputter absorbed layer from top to bottom and cushion, it is to avoid because the impact of gravity makes to sink
Long-pending not uniform phenomenon, further increases product quality.
Specific embodiment
The present invention be described in detail below:
The method comprise the steps that sputter molybdenum electrode layer on substrate；Substrate is contained using alkaline soda-lime glass, this glass
There is metal sodium ion, the absorbed layer of battery can be entered by diffusion, contribute to the growth of thin film crystal grain；Described molybdenum electrode layer table
Face is in fish scale-shaped, and to increase the contact area between levels, thus increasing adhesive force, and molybdenum electrode thickness degree should control
0.5--1.5μm.
The substrate with molybdenum electrode layer is placed in vacuum interior, and positive promotion substrate, on substrate, sputter cigs absorbs
Layer；Reversely promote substrate, sputter cds cushion on absorbed layer；When preparing absorption layer target material, first by cucl2、incl3、
gacl3、na2Se adds stirring in ethylenediamine, and ethylenediamine can absorb the waste heat that synthetic reaction is discharged, and can increase forerunner
Salt dissolubility in a solvent, so that reaction is more complete；Reacted by above-claimed cpd, thus synthesizing cigs powder,
And the particle diameter of cigs is more uniform；Then powder is pressed into absorption layer target material, this mode can make the consistency of target up to
More than 90%.The cushion target of the present invention adopts existing cds target.In process of production, by above-mentioned two targets and corresponding
Sputtering source is placed in the vacuum interior of heating so that sputtering is carried out in a vacuum, and is heated by heater, and it is suitable to maintain
Temperature conditionss；Sputtering source adopts the noble gases of plasma, such as makes argon produce plasma electrical body by ionization device；Sputtering
Source is passed through to bombard target, makes corresponding component deposition on substrate.
In the present invention, on the downside of two targets, workbench is set, the substrate containing molybdenum electrode layer can be along movable workbench；Work
Platform supporting substrate, can make substrate along the forward and reverse movement of workbench by existing apparatus such as rollers simultaneously；Substrate is positive along workbench
When mobile, absorption layer target material is located at directly over substrate, and sputtering source bombards absorption layer target material from top to bottom, makes deposition on molybdenum electrode layer
Absorbed layer；After the completion of absorbed layer deposition, substrate moves backward along workbench, now absorption layer target material should be switched to cushion target
Material, making cushion target be located at directly over substrate, thus bombarding cushion target from top to bottom by sputtering source, making on absorbed layer
Buffer layer.Due to using sputtering method deposit absorbent layer from top to bottom and cushion, it is to avoid because the impact of gravity makes
The not uniform phenomenon of deposition, not only can continuously prepare absorbed layer and cushion, production efficiency is high；And quality of forming film is high.With
When, the thickness of absorbed layer should control at 1.5--2.0 μm, and buffer layer thickness should control at 0.05 μm about.
To there is the substrate of cushion from vacuum interior taking-up, and plate zno conductive oxide layer on the buffer layer；Conductive oxygen
Changing layer adopts magnetic control sputtering plating method to prepare, and its THICKNESS CONTROL is at 0.05 μm about；Again azo layer is plated on conductive oxide layer, it is thick
Degree controls at 0.5--1.5 μm；Then carry out cutting encapsulation.As the Top electrode of battery, it has low sheet resistance to azo, good
Visible light transmissivity, with al electrode constitute Ohmic contact.
Above-mentioned embodiment is used for illustrative purposes only, and is not limitation of the present invention, relevant technical field
Those of ordinary skill, without departing from the spirit and scope of the present invention, acceptable various changes can be made and modification, therefore institute
There is equivalent technical scheme also should belong to scope of the invention.
Claims (2)
1. a kind of method preparing cigs solaode, it comprises the following steps:
(1) sputter molybdenum electrode layer on substrate；
(2) substrate with molybdenum electrode layer is placed in vacuum interior, and positive promotion substrate, on substrate, sputter cigs absorbs
Layer；(3) substrate, sputter cds cushion on absorbed layer are reversely promoted；
(4) will there is the substrate of cushion from vacuum interior taking-up, and plate zno conductive oxide layer on the buffer layer；
(5) azo layer is plated on conductive oxide layer；
(6) cutting encapsulation；
Indoor being located on the upside of substrate of described vacuum is provided with absorption layer target material, cushion target and sputtering corresponding with target
Source, sputtering source passes through to bombard two targets respectively, sputter absorbed layer and cushion on substrate；Described absorption layer target material and cushion
Target is arranged on same rotary body, and a rotating body is provided with sputtering source, is eased up by rotating rotary body switching absorption layer target material
Rush layer target；Described substrate is using alkaline soda-lime glass；Described molybdenum electrode layer surface is in fish scale-shaped, and thickness is 0.5--1.5 μm；
Described absorption layer target material is formed by the compacting of cigs powder；The thickness of described absorbed layer is 1.5--2.0 μm, and the thickness of cushion is
0.05μm；Described conductive oxide layer adopts magnetic control sputtering plating method to prepare, and its thickness is 0.05 μm；Azo thickness degree is 0.5--1.5 μ
m.
2. method according to claim 1 it is characterised in that: by cucl2、incl3、gacl3、na2Se adds in ethylenediamine
Described cigs powder is synthesized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310740599.8A CN103681975B (en) | 2013-12-27 | 2013-12-27 | Method for manufacturing CIGS solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310740599.8A CN103681975B (en) | 2013-12-27 | 2013-12-27 | Method for manufacturing CIGS solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103681975A CN103681975A (en) | 2014-03-26 |
| CN103681975B true CN103681975B (en) | 2017-01-25 |
Family
ID=50318883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310740599.8A Active CN103681975B (en) | 2013-12-27 | 2013-12-27 | Method for manufacturing CIGS solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103681975B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2036533U (en) * | 1988-08-01 | 1989-04-26 | 韩久君 | Multitarget plating chamber of vertical vacuum sputtering machine |
| CN2433262Y (en) * | 2000-07-18 | 2001-06-06 | 湖南三才科技有限公司 | Multi-targat magnetic-control sputtering coiling film coating machine |
| CN101857951A (en) * | 2009-04-08 | 2010-10-13 | 鸿富锦精密工业（深圳）有限公司 | Magnetron sputtering device |
| US8425739B1 (en) * | 2008-09-30 | 2013-04-23 | Stion Corporation | In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials |
| CN103077980A (en) * | 2013-01-25 | 2013-05-01 | 中国农业大学 | CIGS (copper indium gallium selenium) thin film solar cell and preparation method thereof |
| CN103354246A (en) * | 2013-07-10 | 2013-10-16 | 尚越光电科技有限公司 | CIGS (Copper Indium Gallium Selenium) solar cell back-electrode Mo film and preparation technology thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6635154B2 (en) * | 2001-11-03 | 2003-10-21 | Intevac, Inc. | Method and apparatus for multi-target sputtering |
| JP4246547B2 (en) * | 2003-05-23 | 2009-04-02 | 株式会社アルバック | Sputtering apparatus and sputtering method |
| US7018515B2 (en) * | 2004-03-24 | 2006-03-28 | Applied Materials, Inc. | Selectable dual position magnetron |
| CN101988189B (en) * | 2009-08-07 | 2012-10-10 | 鸿富锦精密工业（深圳）有限公司 | Magnetron sputtering target and magnetron sputtering device adopting same |
| EP2437280A1 (en) * | 2010-09-30 | 2012-04-04 | Applied Materials, Inc. | Systems and methods for forming a layer of sputtered material |
-
2013
- 2013-12-27 CN CN201310740599.8A patent/CN103681975B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2036533U (en) * | 1988-08-01 | 1989-04-26 | 韩久君 | Multitarget plating chamber of vertical vacuum sputtering machine |
| CN2433262Y (en) * | 2000-07-18 | 2001-06-06 | 湖南三才科技有限公司 | Multi-targat magnetic-control sputtering coiling film coating machine |
| US8425739B1 (en) * | 2008-09-30 | 2013-04-23 | Stion Corporation | In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials |
| CN101857951A (en) * | 2009-04-08 | 2010-10-13 | 鸿富锦精密工业（深圳）有限公司 | Magnetron sputtering device |
| CN103077980A (en) * | 2013-01-25 | 2013-05-01 | 中国农业大学 | CIGS (copper indium gallium selenium) thin film solar cell and preparation method thereof |
| CN103354246A (en) * | 2013-07-10 | 2013-10-16 | 尚越光电科技有限公司 | CIGS (Copper Indium Gallium Selenium) solar cell back-electrode Mo film and preparation technology thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103681975A (en) | 2014-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2011107035A1 (en) | Method for preparing copper-indium-gallium-selenium film for solar cell photo-absorption layer by magnetron sputtering process | |
| CN103165748B (en) | A kind of method preparing copper-zinc-tin-sulfur solar battery obsorbing layer thin film | |
| US20130045563A1 (en) | Method and device for producing a semiconductor layer | |
| CN103904151B (en) | A kind of HIT solar cell and its preparation method | |
| CN102412339B (en) | Manufacturing method of thin-film solar battery with high-reflection back electrode | |
| CN101908583B (en) | Preparation method of CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer | |
| CN102154622A (en) | Method for preparing copper-indium-gallium-selenium thin film serving as light absorbing layer of solar cell | |
| JP2013539196A (en) | Combination method for making CIGS solar cells | |
| CN106653897A (en) | Copper, zinc, tin, sulfur and selenium thin film solar cell and preparation method therefor | |
| CN110246926A (en) | A kind of magnetically controlled sputter method preparing full-inorganic perovskite solar battery | |
| CN103681975B (en) | Method for manufacturing CIGS solar cell | |
| TW200913284A (en) | Method for the production of a transparent conductive oxide coating | |
| JP2009021607A (en) | Method for production of transparent conductive oxide coating | |
| CN103710674B (en) | One kind prepares CIGS thin film solar battery process method | |
| CN101980368A (en) | Copper indium gallium selenide film battery and preparation method thereof | |
| CN103014623A (en) | Ceramic target material preparation method for CIGS (copper indium gallium selenide) based solar film battery light absorption layer | |
| CN103681960A (en) | Multi-step sputtering process for preparation of CIG precursor layer of CIGS (copper indium gallium selenide) film | |
| CN102828152A (en) | Preparation method of Mo film with low resistance rate | |
| CN101845608A (en) | TeOx-based thin film material for laser direct writing and method for preparing same | |
| KR100936487B1 (en) | Manufacturing method of cds/cdte thin film solar cells | |
| CN202688425U (en) | Target for magnetron sputtering coating of flexible substrate | |
| CN105803392B (en) | A kind of Na doping Cu2ZnSn(S1-xSex)4The preparation method of film | |
| TW201133889A (en) | Substrate with transparent conducting layer for solar cell, solar cell, and producing method therefor | |
| CN109037390A (en) | A kind of cadmium stannate base transparent conductive film, its production technology and solar battery | |
| CN103695851B (en) | Sputtering method prepares the method for flexible solar battery CIGS absorption layer and buffer layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 545006 the Guangxi Zhuang Autonomous Region Liuzhou Liu Dong New Area Bay Road No. 2 East standard workshop No. 2 supporting office building No. 314 Patentee after: Liuzhou Bairente Advanced Materials Co., Ltd. Address before: 545006 the Guangxi Zhuang Autonomous Region, Liuzhou high tech Road, No. 1 standard workshop D East, building 5, floor, floor, Patentee before: Liuzhou Bairente Advanced Materials Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200318 Address after: 547000 No.71, Chengxi Road, Hechi City, Guangxi Zhuang Autonomous Region Patentee after: GUANGXI HUAXI GROUP Co.,Ltd. Address before: 545006 the Guangxi Zhuang Autonomous Region Liuzhou Liu Dong New Area Bay Road No. 2 East standard workshop No. 2 supporting office building No. 314 Patentee before: LIUZHOU BAIRENTE ADVANCED MATERIALS Co.,Ltd. |