CN103681801A - Semiconductor structure and manufacturing method thereof - Google Patents
Semiconductor structure and manufacturing method thereof Download PDFInfo
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- CN103681801A CN103681801A CN201210348093.8A CN201210348093A CN103681801A CN 103681801 A CN103681801 A CN 103681801A CN 201210348093 A CN201210348093 A CN 201210348093A CN 103681801 A CN103681801 A CN 103681801A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 108
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 322
- 239000001301 oxygen Substances 0.000 claims abstract description 320
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 313
- 239000000463 material Substances 0.000 claims abstract description 199
- 229910052751 metal Inorganic materials 0.000 claims abstract description 101
- 239000002184 metal Substances 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims description 65
- 238000010521 absorption reaction Methods 0.000 claims description 42
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 32
- 229910010038 TiAl Inorganic materials 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- 229910052719 titanium Inorganic materials 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 21
- 229910052735 hafnium Inorganic materials 0.000 claims description 12
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000005247 gettering Methods 0.000 abstract 5
- 238000010276 construction Methods 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 10
- 229910004491 TaAlN Inorganic materials 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- 229910010052 TiAlO Inorganic materials 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 150000002926 oxygen Chemical class 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- -1 wherein Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910003855 HfAlO Inorganic materials 0.000 description 2
- 229910004143 HfON Inorganic materials 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910006501 ZrSiO Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006701 autoxidation reaction Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The embodiment of the invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a P-type substrate and a medium layer, a high-k material layer and a metal gate layer which are positioned on the substrate in sequence. The semiconductor structure also comprises an oxygen gettering layer positioned on the metal gate layer and a high work function layer positioned on the oxygen gettering layer, wherein a work function of a material of the high work function layer is larger than that of a material of the metal gate layer; the oxygen gettering layer is used for gettering part of oxygen in the medium layer, the high-k material layer and/or the high work function layer. Compared with the conventional semiconductor structure which only adopts the high work function layer and does not adopt the oxygen gettering layer, the semiconductor structure provided by the embodiment of the invention has the advantage that the EOT (equivalent oxide thickness) is obviously reduced.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, a kind of semiconductor structure of specific design and preparation method thereof.
Background technology
Along with MOS device feature size is more and more less, traditional employing SiO
2the technology that gate medium and polygate electrodes are made MOS device can produce increasing problem.At 65nm and in lower node technique, adopt SiO
2gate medium can cause the leakage current of MOS device and power consumption sharply to increase; Meanwhile, by the caused poly-Si depletion effect of polygate electrodes and the too high problems such as gate resistance, also become more and more serious.
In order to address the above problem, conventionally adopt high k material and metal to substitute traditional SiO
2and polysilicon.It is reported, adopt after high k material gate medium, the leakage current of MOS device can be reduced to and adopt SiO
2during gate medium 1/10th, still, while adopting high k material gate medium, the threshold voltage control problem of MOS device can not be ignored.In order to realize large saturation current, must reduce threshold voltage.
The threshold voltage of MOS device is subject to various factors, and one of them key factor is the work function of metal gate electrode material.For PMOS structure, the threshold voltage that reduces device needs the metal gate that work function is higher.For addressing this problem, conventionally can on metal gate layer, make the high work function layer that one deck work function is larger, this high work function layer forms the metal gate electrode of semiconductor structure together with metal gate layer, owing to making adding of high work function layer the work function of metal gate electrode increase.A few days ago, the method of making high work function layer is normally to doped with oxygen in the not too high material of work function, the oxygen of doping can spread in the high k material layer of bottom and dielectric layer, this can cause the equivalent oxide thickness (EOT) of semiconductor structure to increase undoubtedly, and the increase meeting of EOT produces a very large impact the electric field in grid capacitance, gate insulation layer and defect concentration and gate tunneling electric current.
Summary of the invention
For addressing the above problem, the embodiment of the present invention provides a kind of semiconductor structure and preparation method thereof.
The embodiment of the present invention provides a kind of semiconductor structure, comprises P type substrate, is positioned at the dielectric layer on described substrate, high k material layer and metal gate layer successively, and described semiconductor structure also comprises:
The oxygen being positioned on described metal gate layer is absorbed layer;
And being positioned at the high work function layer on described oxygen absorption layer, the work function of wherein said high work function layer material therefor is greater than the work function of described metal gate layer material therefor;
Described oxygen is absorbed layer for absorbing the oxygen of described dielectric layer, high k material layer and/or described high work function layer part.
Preferably, described oxygen absorption layer comprises one deck or the above structure of one deck.
Preferably, described oxygen absorption layer comprises double-layer structure:
The first oxygen being positioned on described metal gate layer is absorbed layer, and described the first oxygen is absorbed any one in layer employing Ti, Al, Hf or TiAl;
Be positioned at described the first oxygen and absorb the second oxygen absorption layer on layer, described the second oxygen is absorbed layer and is adopted TiN or TaN.
Preferably, the thickness of described metal gate layer is 1 to 5nm.
Preferably, the thickness of described high work function layer is 2 to 15nm.
Preferably, to absorb the thickness of layer be 0.5 to 5nm for described oxygen.
Correspondingly, the embodiment of the present invention also provides a kind of manufacture method of semiconductor structure, and described method comprises provides P type substrate, on described substrate, form successively dielectric layer, high k material layer and metal gate layer, and described method also comprises:
On described metal gate layer, form oxygen and absorb layer;
At described oxygen, absorb on layer and form high work function layer, the work function of wherein said high work function layer material therefor is greater than the work function of described metal gate layer material therefor;
Described oxygen is absorbed layer for absorbing the oxygen of described dielectric layer, high k material layer and/or described high work function layer part.
Preferably, described oxygen absorption layer comprises one deck or the above structure of one deck.
Preferably, described oxygen is absorbed layer and is comprised double-layer structure, and the described oxygen absorption layer that forms on described metal gate layer comprises:
On described metal gate layer, adopt any one in Ti, Al, Hf or TiAl to form the first oxygen and absorb layer;
At described the first oxygen, absorb on layer and adopt TiN or TaN to form the second oxygen absorption layer.
Preferably, the thickness of described metal gate layer is 1 to 5nm.
Preferably, the thickness of described high work function layer is 2 to 15nm.
Preferably, to absorb the thickness of layer be 0.5 to 5nm for described oxygen.
In addition, the embodiment of the present invention also provides a kind of semiconductor structure, and described semiconductor structure comprises P type substrate, is positioned at the dielectric layer on described substrate, high k material layer successively, and described semiconductor structure also comprises:
The oxygen being positioned on described high k material layer is absorbed layer;
Be positioned at described oxygen and absorb the metal gate layer on layer;
And being positioned at the high work function layer on described metal gate layer, the work function of wherein said high work function layer material therefor is greater than the work function of described metal gate layer material therefor;
Described oxygen is absorbed layer for absorbing the oxygen of described dielectric layer, high k material layer and/or described high work function layer part.
Preferably, described oxygen absorption layer comprises one deck or the above structure of one deck.
Preferably, described oxygen absorption layer comprises double-layer structure:
The first oxygen being positioned on described high k material layer is absorbed layer, and described the first oxygen is absorbed any one in layer employing Ti, Al, Hf or TiAl;
Be positioned at described the first oxygen and absorb the second oxygen absorption layer on layer, described the second oxygen is absorbed layer and is adopted TiN or TaN.
Correspondingly, the embodiment of the present invention also provides a kind of manufacture method of semiconductor structure, and described method comprises provides P type substrate, on described substrate, form successively dielectric layer, high k material layer, and described method also comprises:
On described high k material layer, form oxygen and absorb layer;
At described oxygen, absorb on layer and form metal gate layer;
On described metal gate layer, form high work function layer, the work function of wherein said high work function layer material therefor is greater than the work function of described metal gate layer material therefor;
Described oxygen is absorbed layer for absorbing the oxygen of described dielectric layer, high k material layer and/or described high work function layer part.
Preferably, described oxygen absorption layer comprises one deck or the above structure of one deck.
Preferably, described oxygen is absorbed layer and is comprised double-layer structure, and the described oxygen absorption layer that forms on described metal gate layer comprises:
On described high k material layer, adopt any one in Ti, Al, Hf or TiAl to form the first oxygen and absorb layer;
At described the first oxygen, absorb on layer and adopt TiN or TaN to form the second oxygen absorption layer.
In addition, the embodiment of the present invention also provides a kind of semiconductor structure, and described semiconductor structure comprises P type substrate, is positioned at the dielectric layer on described substrate, high k material layer successively, and described semiconductor structure also comprises:
The oxygen being positioned on described high k material layer is absorbed layer, and described oxygen is absorbed any one in layer employing Ti, Al, Hf or TiAl;
Be positioned at described oxygen and absorb the metal gate layer on layer;
Be positioned at the oxygen barrier layers on described metal gate layer, described oxygen barrier layers adopts TiN or TaN;
And being positioned at the high work function layer on described oxygen barrier layers, the work function of wherein said high work function layer material therefor is greater than the work function of described metal gate layer material therefor.
The embodiment of the present invention also provides a kind of manufacture method of semiconductor structure, and described method comprises provides P type substrate, on described substrate, form successively dielectric layer, high k material layer, and described method also comprises:
On described high k material layer, form oxygen and absorb layer, described oxygen is absorbed any one in layer employing Ti, Al, Hf or TiAl;
At described oxygen, absorb on layer and form metal gate layer;
On described metal gate layer, form oxygen barrier layers, described oxygen barrier layers adopts TiN or TaN;
On described oxygen barrier layers, form high work function layer, the work function of wherein said high work function layer material therefor is greater than the work function of described metal gate layer material therefor.
The semiconductor structure that the embodiment of the present invention provides, at metal gate layer, make between high work function layer and adopt the oxygen of the material of being easily combined with oxygen to absorb layer, this oxygen is absorbed layer can absorb unnecessary oxygen in described dielectric layer, high k material layer and/or high work function layer, thereby can reduce the oxygen content in described dielectric layer, high k material layer and/or high work function layer, can prevent that the oxygen in high work function layer from spreading paramount k material layer and/or dielectric layer to bottom, and then can reduce the EOT of whole high k material layer and dielectric layer simultaneously.The EOT of the semiconductor structure that the semiconductor structure embodiment of the present invention that does not adopt oxygen to absorb layer with respect to only adopting high work function layer provides has obvious reduction.
Accompanying drawing explanation
Shown in accompanying drawing, above-mentioned and other object of the present invention, Characteristics and advantages will be more clear.In whole accompanying drawings, identical Reference numeral is indicated identical part.Deliberately by actual size equal proportion convergent-divergent, do not draw accompanying drawing, focus on illustrating purport of the present invention.
Fig. 1 is the structural representation of the semiconductor structure of the embodiment of the present invention one;
Fig. 2 is the flow chart of the manufacture method of the semiconductor structure shown in Fig. 1;
Fig. 3 is the structural representation of the semiconductor structure of the embodiment of the present invention one;
Fig. 4 is the flow chart of the manufacture method of the semiconductor structure shown in Fig. 3;
Fig. 5 is the structural representation of the semiconductor structure of the embodiment of the present invention three;
Fig. 6 is the flow chart of the manufacture method of the semiconductor structure shown in Fig. 5;
Fig. 7 is the structural representation of the semiconductor structure of the embodiment of the present invention four;
Fig. 8 is the flow chart of the manufacture method of the semiconductor structure shown in Fig. 7;
Fig. 9 is the structural representation of the semiconductor structure of the embodiment of the present invention five;
Figure 10 is the flow chart of the manufacture method of the semiconductor structure shown in Fig. 9;
Reference numeral:
10-substrate, 11-dielectric layer, the high k material layer of 12-, 13-metal gate layer, 14-oxygen is absorbed layer, and 14-1-the first oxygen is absorbed layer, and 14-2-the second oxygen is absorbed layer, 15-high work function layer, 16-oxygen barrier layers.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that, so the present invention is not subject to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when the embodiment of the present invention is described in detail in detail; for ease of explanation; the profile that represents device architecture can be disobeyed general ratio and be done local amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that should comprise in addition, length, width and the degree of depth in actual fabrication.
The work function that increases metal gate electrode for solving can cause the problem of the EOT increase of semiconductor structure, present inventor can prevent again semiconductor structure that the EOT of semiconductor structure increases and preparation method thereof by repeatedly studying and test a kind of work function that can increase metal gate electrode of proposition, for this reason, inventor provides following scheme.
Embodiment mono-
The embodiment of the present invention provides a kind of semiconductor structure, Fig. 1 shows the structural representation of this semiconductor structure, this semiconductor structure comprises: substrate 10, is positioned at the dielectric layer 11 on substrate 10, high k material layer 12, metal gate layer 13, oxygen absorption layer 14 and high work function layer 15 successively; Wherein, the work function of high work function layer 15 material used is greater than the work function of metal gate layer 13 material used; Oxygen is absorbed layer 14 for absorbing dielectric layer 11, high k material layer 12 and/or the unnecessary oxygen of high work function layer 15, avoids the EOT of high k material layer and dielectric layer to increase.In the embodiment of the present invention one " on " implication can be directly positioned at contiguously top, can be also be not directly positioned at contiguously top.
High k material layer 12 in the embodiment of the present invention adopts high-k dielectric material (being high dielectric constant material), for example, can be conventional HfO
2, Al
2o
3, can be also HfSiO
x, HfON, HfAlO
x, ZrO
2, ZrSiO
x, Ta
2o
5, La
2o
3, HfLaO
x, LaAlO
x, LaSiO
xand the nitride of above-mentioned material or nitrogen oxide etc.; At this, the value of x can be determined according to designing requirement, and the embodiment of the present invention is not construed as limiting the value of x.
The thickness that oxygen in the embodiment of the present invention is absorbed layer 14 can be 0.5 ~ 5nm, oxygen is absorbed the materials that layer 14 can adopt Ti, Al, TiAl or Hf etc. to be easily combined with oxygen, and the oxygen of being made by these materials is absorbed the oxygen that layer 14 can be unnecessary in dielectric layer 11, high k material layer 12 and/or high work function layer 15 and be combined (the easy generation TiO of being combined with oxygen of Ti for example
2, Al is easily combined with oxygen and is generated Al
2o
3, TiAl is easily combined with oxygen and is generated TiAlO, and Hf is easily combined with oxygen and is generated HfO
2deng), thereby can reduce the oxygen content in dielectric layer 11, high k material layer 12 and/or high work function layer 15, therefore can reduce the whole EOT of high k material layer 12 and dielectric layer 11; In addition, it can be also the dense materials of structure such as one deck TiN or TaN that oxygen is absorbed layer 14, thereby the existence of this layer of dense material can stop that oxygen in high work function layer 15 spreads paramount k material layer 12 to bottom or dielectric layer 11 causes the whole EOT of high k material layer 12 and dielectric layer 11 to increase.
High work function layer 15 in the embodiment of the present invention can adopt TiN, TaN, MoN, HfN, TaAlN, MoAlN, HfAlN, TaC, HfC, TaSiC, HfSiC, Ru, Tr, W, the Mo of doping O, or adopt TiN, TaN, MoN, HfN, TaAlN, MoAlN, HfAlN, TaC, HfC, TaSiC, HfSiC, Ru, Tr, W, Mo, the Ni of doping N, or adopt Pt, Au, Be etc.; Wherein, the work function of high work function layer 15 material therefor can be greater than or equal to 4.67, more specifically can be greater than or equal to 5, for example, can be 5.15; The work function of high work function layer 15 material therefor in the embodiment of the present invention can be greater than or equal to the work function of metal gate layer 13 material therefor.
It should be noted that, high work function layer 15 in the embodiment of the present invention can be only one deck, also can be for comprising the laminated construction of multilayer, when being the laminated construction that comprises multilayer, the material that each layer adopts can be identical can be not identical yet, but in laminated construction, have at least the work function of one deck material that structure adopts to be not less than the work function of metal gate layer 13 material therefor.
The semiconductor structure that the embodiment of the present invention provides, at metal gate layer, make between high work function layer and adopt the oxygen of the material of being easily combined with oxygen to absorb layer, this oxygen is absorbed layer can absorb unnecessary oxygen in described dielectric layer, high k material layer and/or high work function layer, thereby can reduce the oxygen content in described dielectric layer, high k material layer and/or high work function layer, can prevent that the oxygen in high work function layer from spreading paramount k material layer and/or dielectric layer to bottom, and then can reduce the EOT of whole high k material layer and dielectric layer simultaneously.The EOT of the semiconductor structure that the semiconductor structure embodiment of the present invention that does not adopt oxygen to absorb layer with respect to only adopting high work function layer provides has obvious reduction.
Correspondingly, the embodiment of the present invention one also provides the manufacture method of the semiconductor structure shown in a kind of Fig. 1, and Fig. 2 shows the flow chart of the method, and the method comprises:
Step S201: substrate 10 is provided; Substrate 10 can be any semi-conducting material, for example monocrystalline silicon, polysilicon, amorphous silicon, germanium, SiGe, carborundum, indium antimonide, lead telluride, indium arsenide, indium phosphide, GaAs or gallium antimonide, alloy semiconductor or other compound semiconductor materials, wherein, substrate 10 is P type substrate.
Step S202: form dielectric layer 11 on substrate 10; Dielectric layer 11 can adopt SiO
2, Si
3n
4, N
2o etc., thickness can be between 0.5 ~ 2nm, for example, when adopting SiO
2time, the thickness of dielectric layer 11 can be 0.7nm;
Particularly, can adopt autoxidation growth, thermal oxide growth to make this dielectric layer 11, such as adopting the methods such as molecular beam epitaxy (MBE) or atomic layer deposition (ALD) to form dielectric layer 11; Also substrate 10 can be placed in to deionized water a period of time forms dielectric layer 11 on substrate 10.
Step S203: the high k material layer 12 of deposit on dielectric layer 11, wherein high k material layer can adopt conventional HfO
2, Al
2o
3, also can adopt HfSiO
x, HfON, HfAlO
x, ZrO
2, ZrSiO
x, Ta
2o
5, La
2o
3, HfLaO
x, LaAlO
x, LaSiO
xand the nitride of above-mentioned material or nitrogen oxide etc.; Wherein can adopt the methods such as MBE, ALD or sputter to make this high k material layer 12.
Step S204: make metal gate layer 13 on high k material layer 12; Metal gate layer 13 can adopt one or several the combination in TiN, TaN, MoN, HfN, TaAlN, MoAlN, HfAlN, TaC, HfC, TaSiC, HfSiC, Pt, Ru, Tr, W, Mo, Ni etc.; The thickness of metal gate layer 13 can be between 1 ~ 5nm, such as thinking 1nm, 5nm or 3nm etc.;
Step S205: make oxygen and absorb layer 14 on metal gate layer 13; The thickness of the oxygen absorption layer 14 in the embodiment of the present invention can be at 0.5 ~ 5nm, oxygen is absorbed the materials that layer 14 can adopt Ti, Al, TiAl or Hf etc. to be easily combined with oxygen, and the oxygen of being made by these materials is absorbed the oxygen that layer 14 can be unnecessary in dielectric layer 11, high k material layer 12 and/or high work function layer 15 and be combined (the easy generation TiO of being combined with oxygen of Ti for example
2, Al is easily combined with oxygen and is generated Al
2o
3, TiAl is easily combined with oxygen and is generated TiAlO, and Hf is easily combined with oxygen and is generated HfO
2deng), thereby can reduce the oxygen content in dielectric layer 11, high k material layer 12 and/or high work function layer 15, therefore can reduce the EOT of the integral body 5 of high k material layer 12 and dielectric layer 11.In addition, oxygen is absorbed layer 14 and also can be adopted the dense materials of structure such as TiN or TaN to be made, thereby the existence of this layer of dense material can stop that oxygen in high work function layer 15 spreads paramount k material layer 12 to bottom or dielectric layer 11 causes the whole EOT of high k material layer 12 and dielectric layer 11 to increase.Particularly, this oxygen is absorbed layer 14 and can be adopted the film build method that sputter, PVD etc. are conventional to make, and manufacturing process can carry out also can under higher temperature, carrying out at normal temperatures, for example 100 ~ 200 ℃.
It should be noted that, oxygen in the embodiment of the present invention is absorbed layer 14 can only comprise one deck structure, also can comprise sandwich construction, when comprising sandwich construction, each layer of structure can all adopt the material of being very easily combined with oxygen, the material that each layer adopts in addition can be identical can be not identical yet, the manufacture method that each layer adopts can be identical can be not identical yet.
Step S206: absorb on layer 14 and form high work function layer 15 at oxygen; The thickness of high work function layer 15 can be 2 ~ 15nm, wherein high work function layer 15 can adopt TiN, TaN, MoN, HfN, TaAlN, MoAlN, HfAlN, TaC, HfC, TaSiC, HfSiC, Ru, Tr, W, the Mo of doping O, in the embodiment of the present invention, in material, concrete numerical value this area of oxygen content can require and determine according to specific design.
Particularly, high work function layer 15 can adopt the methods such as PVD, CVD or ALD to make, first this step can comprise that at oxygen, absorbing on layer 14 the pseudo-high work function layer of deposit one then makes this material layer change high work function layer 15 into this puppet high work function layer a certain amount of oxygen that adulterates, and specifically can adopt in oxygen atmosphere and to carry out annealing in process or directly in pseudo-high work function layer, to inject the modes such as oxonium ion to pseudo-high work function layer a certain amount of oxygen that adulterates forming structure after pseudo-high work function layer.
The semiconductor structure that the embodiment of the present invention provides, at metal gate layer, make between high work function layer and adopt the oxygen of the material of being easily combined with oxygen to absorb layer, this oxygen is absorbed layer can absorb unnecessary oxygen in described dielectric layer, high k material layer and/or high work function layer, thereby can reduce the oxygen content in described dielectric layer, high k material layer and/or high work function layer, can prevent that the oxygen in high work function layer from spreading paramount k material layer and/or dielectric layer to bottom, and then can reduce the EOT of whole high k material layer and dielectric layer simultaneously.The EOT of the semiconductor structure that the semiconductor structure embodiment of the present invention that does not adopt oxygen to absorb layer with respect to only adopting high work function layer provides has obvious reduction.
It should be noted that; it can be one deck structure that oxygen in the embodiment of the present invention is absorbed layer 14; also can be structure more than one deck; can adopt a kind of material; also can adopt multiple material; those of ordinary skills can do corresponding improvement and distortion according to actual demand, it will be appreciated that, these improvement and distortion are all in protection scope of the present invention.
Embodiment bis-
The embodiment of the present invention two provides a kind of semiconductor structure, Fig. 3 shows the structural representation of this semiconductor structure, this semiconductor structure comprises: substrate 10, be positioned at successively the dielectric layer 11 on substrate 10, high k material layer 12, metal gate layer 13, the first oxygen is absorbed layer 14-1, the second oxygen is absorbed layer 14-2 and high work function layer 15, wherein, the first oxygen absorbs layer 14-1 and the second oxygen absorption layer 14-2 formation oxygen is absorbed layer 14, and the first oxygen is absorbed layer 14-1 and the second oxygen is absorbed the material (Ti that has at least one deck employing to be very easily combined with oxygen in layer 14-2, Al, TiAl or Hf etc.), and the work function of high work function layer 15 material therefor is greater than the work function of metal gate layer 13 material therefor.
The thickness of the first oxygen absorption layer 14-1 in the embodiment of the present invention can be at 0.2 ~ 2nm, and the thickness of the second oxygen absorption layer 14-2 can be at 0.3 ~ 3nm; The thickness of certain the first oxygen absorption layer 14-1 also can be at 0.3 ~ 3nm, and the thickness of the second oxygen absorption layer 14-2 also can be at 0.2 ~ 2nm, and the embodiment of the present invention is not limited in this respect.
In the embodiment of the present invention, the first oxygen absorption layer 14-1 can adopt any one in Ti, Al, TiAl or Hf, can adopt at normal temperatures sputtering method to make, and thickness can be 1nm; The second oxygen is absorbed any one in layer 14-2 employing Ti, Al, TiAl or Hf, can adopt at normal temperatures sputtering method to make, and thickness is 0.5nm; Now, the first oxygen absorbs layer 14-1 and the second oxygen absorption layer 14-2 all adopts the material of being very easily combined with oxygen, the first oxygen is absorbed layer 14-1 can be for absorbing unnecessary oxygen in high k material layer 12 and dielectric layer 11, and the second oxygen absorption layer 14-2 can be for absorbing unnecessary oxygen in high work function layer 15, this structure is conducive to absorb oxygen unnecessary in semiconductor structure, thereby can reduce the EOT of high k material layer 12 and dielectric layer 11.
In addition, in the embodiment of the present invention, the first oxygen is absorbed layer 14-1 and can be adopted any one in Ti, Al, TiAl or Hf, the second oxygen to absorb layer 14-2 can to adopt a kind of in TiN or TaN; Now; the first oxygen is absorbed layer 14-1 can be for absorbing unnecessary oxygen in high k material layer 12 and dielectric layer 11; it is the diaphragm of one deck densification that the second oxygen is absorbed layer 14-2; oxygen unnecessary in high work function layer the 14-2 paramount k material layer 12 of diffusion and dielectric layer 11 downwards can be prevented, thereby the EOT of high k material layer 12 and dielectric layer 11 can be reduced.
In embodiments of the present invention, high work function layer 15 can adopt TiN, TaN, MoN, HfN, TaAlN, MoAlN, HfAlN, TaC, HfC, TaSiC, HfSiC, Ru, Tr, W, the Mo of doping O.
It should be noted that, the high work function layer 15 in the embodiment of the present invention can be one deck structure, can be also sandwich construction, and the present invention is not limited in this respect.
Correspondingly, the embodiment of the present invention two also provides the manufacture method of a kind of above-mentioned semiconductor structure (being the structure shown in Fig. 3), and Fig. 4 shows the flow chart of this manufacture method, and referring to Fig. 3 and Fig. 4, the method comprises the following steps in the lump:
Step S401 ~ step S404 is corresponding one by one with the step S201 ~ step S204 in embodiment mono-, step S401 ~ step S404 can be known by refer step S201 ~ step S204, do not repeat them here, below only introduce manufacture method in the embodiment of the present invention two and the difference of the manufacture method in embodiment mono-:
Step S405: form the first oxygen and absorb layer 14-1 on metal gate layer 13;
The thickness of the first oxygen absorption layer 14-1 in the embodiment of the present invention can be at 0.2 ~ 2nm; The first oxygen is absorbed the material that layer 14-1 can adopt Ti, Al, TiAl or Hf etc. to be easily combined with oxygen.
Step S406: form the second oxygen and absorb a layer 14-2 on the first oxygen absorption layer 14-1;
The thickness of the second oxygen absorption layer 14-2 can be at 0.3 ~ 3nm, and the second oxygen is absorbed the material that layer 14-2 can adopt Ti, Al, TiAl or Hf etc. to be easily combined with oxygen; In addition; in the embodiment of the present invention, the second oxygen is absorbed layer 14-2 and also can be adopted TiN or TaN etc.; TiN or TaN absorb the diaphragm that forms one deck densification on layer 14-1 at the first oxygen, can prevent that the oxygen in high work function layer 15 from spreading paramount k material layer 12 and/or dielectric layer 11 downwards.
Step S407: absorb on layer 14-2 and form high work function layer 15 at the second oxygen;
Specifically can adopt the methods such as sputter, CVD, MOCVD, PVD to make this high work function layer 15: while adopting the methods such as CVD, MOCVD, PVD, can select one or several in TiN, TaN, MoN, HfN, TaAlN, MoAlN, HfAlN, TaC, HfC, TaSiC, HfSiC, Ru, Tr, W, Mo etc., as long as in manufacturing process a certain amount of oxygen of selective doping;
The oxygen of the embodiment of the present invention two is absorbed layer and is comprised that the first oxygen is absorbed layer and the second oxygen is absorbed layer, and the existence of high work function layer has increased the whole metal gate electrode work function of (metal gate electrode comprises metal gate layer and high work function layer) on the one hand; On the other hand, the first oxygen is absorbed layer can absorb unnecessary oxygen in high k material layer and/or dielectric layer, the second oxygen is absorbed layer can absorb oxygen unnecessary in high work function layer, can stop the oxygen in high work function layer to spread paramount k material layer and/or dielectric layer downwards, thereby avoid the EOT of high k material layer and dielectric layer to increase simultaneously.
It should be noted that, the embodiment of the present invention two has only been introduced oxygen and has been absorbed the double-decker that layer comprises the first oxygen absorption layer and the second oxygen absorption layer, in fact, oxygen is absorbed layer can also comprise three layers or sandwich construction, for example, oxygen is absorbed layer also can adopt the three-decker of Ti/TiN/Al, and oxygen is absorbed layer and is followed successively by from bottom to up Ti, TiN, Al; Now, the Ti of lower floor can absorb high k material layer and/or the unnecessary oxygen of dielectric layer, and the Al on upper strata can absorb oxygen unnecessary in high work function layer, and middle TiN can stop that again the oxygen in high work function layer spreads paramount k material layer and/or dielectric layer downwards simultaneously.Wherein, oxygen is absorbed layer employing sandwich construction, the material that these sandwich constructions adopt can be identical can be not identical yet, its thickness can be identical can be not identical yet, as long as guarantee that oxygen absorbs that layer is whole can absorb unnecessary oxygen in high k material layer, dielectric layer and/or high work function layer.Those skilled in the art can absorb the concrete structure of layer according to specific requirement appropriate change oxygen, these all should be included in technical scheme of the present invention.
Embodiment tri-
The embodiment of the present invention three provides a kind of semiconductor structure, semiconductor structure in this semiconductor structure and the embodiment of the present invention one is similar, for simplicity, the embodiment of the present invention one is only introduced the difference of the semiconductor structure in this semiconductor structure and the embodiment of the present invention one, can obtain referring to the embodiment of the present invention one with the something in common of semiconductor structure in the embodiment of the present invention one.
Fig. 5 shows the structural representation of this semiconductor structure, and this semiconductor structure comprises: substrate 10, is positioned at the dielectric layer 11 on substrate 10, high k material layer 12, oxygen absorption layer 14, metal gate layer 13 and high work function layer 15 successively; Wherein, the work function of high work function layer 15 material used is greater than the work function of metal gate layer 13 material used; Oxygen is absorbed layer 14 for absorbing dielectric layer 11, high k material layer 12 and/or the unnecessary oxygen of high work function layer 15, avoids the EOT of semiconductor structure to increase.
In the embodiment of the present invention three " on " implication can be directly positioned at contiguously top, can be also be not directly positioned at contiguously top
The thickness of oxygen absorption layer 14 can be at 0.5 ~ 5nm, oxygen is absorbed the materials that layer 14 can adopt Ti, Al, TiAl or Hf etc. to be easily combined with oxygen, and the oxygen of being made by these materials is absorbed the oxygen that layer 14 can be unnecessary in dielectric layer 11, high k material layer 12 and/or high work function layer 15 and be combined (the easy generation TiO of being combined with oxygen of Ti for example
2, Al is easily combined with oxygen and is generated Al
2o
3, TiAl is easily combined with oxygen and is generated TiAlO, and Hf is easily combined with oxygen and is generated HfO
2deng), thereby can reduce the oxygen content in dielectric layer 11, high k material layer 12 and/or high work function layer 15, therefore can reduce the whole EOT of high k material layer 12 and dielectric layer 11; In addition, it can be also the dense materials of structure such as one deck TiN or TaN that oxygen is absorbed layer 14, thereby the existence of this layer of dense material can stop that oxygen in high work function layer 15 spreads paramount k material layer 12 to bottom or dielectric layer 11 causes the whole EOT of high k material layer 12 and dielectric layer 11 to increase.
Oxygen in the embodiment of the present invention is absorbed layer 14 between high k material layer 12 and metal gate layer 13, can absorb unnecessary oxygen in high k material layer 12 and/or dielectric layer 11, also can absorb the oxygen in high work function layer 15, can play the effect of the EOT that reduces high k material layer 12 and dielectric layer 11 simultaneously.
Other parameters in the embodiment of the present invention three can obtain referring to the description in the embodiment of the present invention one, do not repeat them here.
Correspondingly, the embodiment of the present invention three also provides a kind of manufacture method of semiconductor structure, and in the lump referring to Fig. 5 and Fig. 6, this manufacture method comprises the following steps:
Step S601 ~ step S603 is corresponding one by one with the step S201 ~ step S203 in embodiment mono-, step S601 ~ step S603 can be known by refer step S201 ~ step S203, do not repeat them here, below only introduce manufacture method in the embodiment of the present invention three and the difference of the manufacture method in embodiment mono-:
Step S603: make oxygen and absorb layer 14 on high k material layer 12;
The thickness of the oxygen absorption layer 14 in the embodiment of the present invention can be at 0.5 ~ 5nm, oxygen is absorbed the materials that layer 14 can adopt Ti, Al, TiAl or Hf etc. to be easily combined with oxygen, and the oxygen of being made by these materials is absorbed the oxygen that layer 14 can be unnecessary in dielectric layer 11, high k material layer 12 and/or high work function layer 15 and be combined (the easy generation TiO of being combined with oxygen of Ti for example
2, Al is easily combined with oxygen and is generated Al
2o
3, TiAl is easily combined with oxygen and is generated TiAlO, and Hf is easily combined with oxygen and is generated HfO
2deng), thereby can reduce the oxygen content in dielectric layer 11, high k material layer 12 and/or high work function layer 15, therefore can reduce the EOT of the integral body 5 of high k material layer 12 and dielectric layer 11.In addition, oxygen is absorbed layer 14 and also can be adopted the dense materials of structure such as TiN or TaN to be made, thereby the existence of this layer of dense material can stop that oxygen in high work function layer 15 spreads paramount k material layer 12 to bottom or dielectric layer 11 causes the whole EOT of high k material layer 12 and dielectric layer 11 to increase.Particularly, this oxygen is absorbed layer 14 and can be adopted the film build method that sputter, PVD etc. are conventional to make, and manufacturing process can carry out also can under higher temperature, carrying out at normal temperatures, for example 100 ~ 200 ℃.
Step S604: absorb on layer 14 and form metal gate layer 13 at oxygen;
Step S606: form high work function layer 15 on metal gate layer 13.
The thickness of high work function layer 15 can be 2 ~ 15nm, wherein high work function layer 15 can adopt TiN, TaN, MoN, HfN, TaAlN, MoAlN, HfAlN, TaC, HfC, TaSiC, HfSiC, Ru, Tr, W, the Mo of doping O, in the embodiment of the present invention, in material, concrete numerical value this area of oxygen content can require and determine according to specific design.
It should be noted that, oxygen in the embodiment of the present invention is absorbed layer 14 can only comprise one deck structure, also can comprise sandwich construction, when comprising sandwich construction, each layer of structure can all adopt the material of being very easily combined with oxygen, the material that each layer adopts in addition can be identical can be not identical yet, the manufacture method that each layer adopts can be identical can be not identical yet.
Embodiment tetra-
The embodiment of the present invention four provides a kind of semiconductor structure, Fig. 7 shows the structural representation of this semiconductor structure, different from Fig. 5 is, the oxygen absorption layer 14 of this semiconductor structure comprises two-layer, and the first oxygen absorption layer 14-2 on high k material layer 12 and the second oxygen of absorbing between layer 14-1 and metal gate layer at the first oxygen are absorbed a layer 14-2.
Wherein, the first oxygen absorbs layer 14-1 and the second oxygen is absorbed the material (Ti, Al, TiAl or Hf etc.) that has at least one deck employing to be very easily combined with oxygen in layer 14-2, and the work function of high work function layer 15 material therefor is greater than the work function of metal gate layer 13 material therefor.
Other parameters of semiconductor structure in the embodiment of the present invention four can, referring to the description in the embodiment of the present invention one to three, not repeat them here.
Correspondingly, the embodiment of the present invention four also provides a kind of manufacture method of semiconductor structure, and Fig. 8 shows the flow chart of this manufacture method, and referring to Fig. 7 and Fig. 8, the method comprises the following steps in the lump:
Step S801 ~ step S803 is corresponding one by one with the step S601 ~ step S603 in embodiment mono-, step S801 ~ step S803 can be known by refer step S601 ~ step S603, do not repeat them here, below only introduce manufacture method in the embodiment of the present invention two and the difference of the manufacture method in embodiment mono-:
Step S804: make the first oxygen and absorb layer 14-1 on high k material layer 12;
Step S805: make the second oxygen and absorb a layer 14-2 on the first oxygen absorption layer 14-1;
Step S806: absorb on layer 14-2 and make metal gate layer 13 at the second oxygen;
Step S807: make high work function layer 15 on metal gate layer 13.
Other parameters in the embodiment of the present invention four can, referring to the description in the embodiment of the present invention one ~ tri-, not repeat them here.
For reducing the EOT of the semiconductor structure that work function is higher, the embodiment of the present invention five also provides a kind of semiconductor structure.
Embodiment five
The present invention is that embodiment five provides a kind of semiconductor structure, Fig. 9 shows the structural representation of this semiconductor structure, this semiconductor structure comprises: substrate 10, is positioned at the dielectric layer 11 on substrate 10, high k material layer 12, oxygen absorption layer 14, metal gate layer 13, oxygen barrier layers 16 and high work function layer 15 successively; Wherein, the work function of high work function layer 15 material used is greater than the work function of metal gate layer 13 material used; Oxygen is absorbed layer 14 for absorbing dielectric layer 11, high k material layer 12 and/or the unnecessary oxygen of high work function layer 15, oxygen barrier layers 16 can adopt the dense materials such as TiN or TaN, for stopping that the oxygen of high work function layer 15 spreads paramount k material layer and/or dielectric layer downwards, avoids the EOT of high k material layer and dielectric layer to increase.In the embodiment of the present invention one " on " implication can be directly positioned at contiguously top, can be also be not directly positioned at contiguously top.
Other parameters of semiconductor structure in the embodiment of the present invention five can obtain referring to the description in the embodiment of the present invention one ~ tetra-.
Correspondingly, the embodiment of the present invention five also provides a kind of manufacture method of semiconductor structure, and Figure 10 shows the flow chart of this manufacture method, and referring to Fig. 9 and Figure 10, the method comprises in the lump:
Step S1001 ~ step S1003 is corresponding one by one with the step S801 ~ step S803 in embodiment mono-, step S1001 ~ step S1003 can be known by refer step S801 ~ step S803, do not repeat them here, below only introduce manufacture method in the embodiment of the present invention two and the difference of the manufacture method in embodiment mono-:
Step S1004: make oxygen and absorb layer 14 on high k material layer, the thickness that oxygen is absorbed layer 14 can be 0.5 ~ 5nm, oxygen is absorbed the materials that layer 14 can adopt Ti, Al, TiAl or Hf etc. to be easily combined with oxygen, and the oxygen of being made by these materials is absorbed the oxygen that layer 14 can be unnecessary in dielectric layer 11, high k material layer 12 and/or high work function layer 15 and be combined (the easy generation TiO of being combined with oxygen of Ti for example
2, Al is easily combined with oxygen and is generated Al
2o
3, TiAl is easily combined with oxygen and is generated TiAlO, and Hf is easily combined with oxygen and is generated HfO
2deng), thereby can reduce the oxygen content in dielectric layer 11, high k material layer 12 and/or high work function layer 15, therefore can reduce the whole EOT of high k material layer 12 and dielectric layer 11.
Step S1005: absorb on layer 14 and form metal gate layer 13 at oxygen;
Step S1006: make oxygen barrier layers 16 on metal gate layer 13; Oxygen barrier layers 16 can be the dense materials of structure such as one deck TiN or TaN, thereby the existence of this layer of dense material can stop that oxygen in high work function layer 15 spreads paramount k material layer 12 to bottom or dielectric layer 11 causes the whole EOT of high k material layer 12 and dielectric layer 11 to increase.Particularly, oxygen barrier layers 16 can adopt the methods such as ALD, PVD, CVD to make, and the thickness of oxygen barrier layers 16 can be 0.5 ~ 5nm.
Step S1007: form high work function layer 15 on oxygen barrier layers 16.
Other parameters of the manufacture method of the semiconductor structure in the embodiment of the present invention five can obtain referring to the description in the embodiment of the present invention one ~ tetra-, do not repeat them here.
Oxygen in semiconductor structure in the embodiment of the present invention five is absorbed layer can absorb unnecessary oxygen in high k material layer and dielectric layer, oxygen barrier layers can stop that the oxygen in high work function layer spreads paramount k material layer and/or dielectric layer downwards, therefore the semiconductor structure that, the embodiment of the present invention five provides is with respect to only there being the EOT of the semiconductor structure of high work function layer obviously to reduce.
The above, be only preferred embodiment of the present invention, not the present invention done to any pro forma restriction, and those skilled in the art can reasonably combine and be out of shape to obtain other technologies scheme above-described embodiment.
Although the present invention discloses as above with preferred embodiment, yet not in order to limit the present invention.Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (20)
1. a semiconductor structure, described semiconductor structure comprises P type substrate, is positioned at the dielectric layer on described substrate, high k material layer and metal gate layer successively, it is characterized in that, and described semiconductor structure also comprises:
The oxygen being positioned on described metal gate layer is absorbed layer;
And being positioned at the high work function layer on described oxygen absorption layer, the work function of wherein said high work function layer material therefor is greater than the work function of described metal gate layer material therefor;
Described oxygen is absorbed layer for absorbing the oxygen of described dielectric layer, high k material layer and/or described high work function layer part.
2. semiconductor structure according to claim 1, is characterized in that, described oxygen is absorbed layer and comprised one deck or the above structure of one deck.
3. semiconductor structure according to claim 2, is characterized in that, described oxygen is absorbed layer and comprised double-layer structure:
The first oxygen being positioned on described metal gate layer is absorbed layer, and described the first oxygen is absorbed any one in layer employing Ti, Al, Hf or TiAl;
Be positioned at described the first oxygen and absorb the second oxygen absorption layer on layer, described the second oxygen is absorbed layer and is adopted TiN or TaN.
4. semiconductor structure according to claim 1, is characterized in that, the thickness of described metal gate layer is 1 to 5nm.
5. semiconductor structure according to claim 1, is characterized in that, the thickness of described high work function layer is 2 to 15nm.
6. according to the semiconductor structure described in claim 1-5 any one, it is characterized in that, the thickness that described oxygen is absorbed layer is 0.5 to 5nm.
7. a manufacture method for semiconductor structure, described method comprises provides P type substrate, on described substrate, form successively dielectric layer, high k material layer and metal gate layer, it is characterized in that, and described method also comprises:
On described metal gate layer, form oxygen and absorb layer;
At described oxygen, absorb on layer and form high work function layer, the work function of wherein said high work function layer material therefor is greater than the work function of described metal gate layer material therefor;
Described oxygen is absorbed layer for absorbing the oxygen of described dielectric layer, high k material layer and/or described high work function layer part.
8. semiconductor structure according to claim 7, is characterized in that, described oxygen is absorbed layer and comprised one deck or the above structure of one deck.
9. semiconductor structure according to claim 8, is characterized in that, described oxygen is absorbed layer and comprised double-layer structure, and the described oxygen absorption layer that forms on described metal gate layer comprises:
On described metal gate layer, adopt any one in Ti, Al, Hf or TiAl to form the first oxygen and absorb layer;
At described the first oxygen, absorb on layer and adopt TiN or TaN to form the second oxygen absorption layer.
10. manufacture method according to claim 7, is characterized in that, the thickness of described metal gate layer is 1 to 5nm.
11. manufacture methods according to claim 7, is characterized in that, the thickness of described high work function layer is 2 to 15nm.
12. according to the semiconductor structure described in claim 7-11 any one, it is characterized in that, the thickness that described oxygen is absorbed layer is 0.5 to 5nm.
13. 1 kinds of semiconductor structures, described semiconductor structure comprises P type substrate, is positioned at the dielectric layer on described substrate, high k material layer successively, it is characterized in that, and described semiconductor structure also comprises:
The oxygen being positioned on described high k material layer is absorbed layer;
Be positioned at described oxygen and absorb the metal gate layer on layer;
And being positioned at the high work function layer on described metal gate layer, the work function of wherein said high work function layer material therefor is greater than the work function of described metal gate layer material therefor;
Described oxygen is absorbed layer for absorbing the oxygen of described dielectric layer, high k material layer and/or described high work function layer part.
14. semiconductor structures according to claim 13, is characterized in that, described oxygen is absorbed layer and comprised one deck or the above structure of one deck.
15. semiconductor structures according to claim 14, is characterized in that, described oxygen is absorbed layer and comprised double-layer structure:
The first oxygen being positioned on described high k material layer is absorbed layer, and described the first oxygen is absorbed any one in layer employing Ti, Al, Hf or TiAl;
Be positioned at described the first oxygen and absorb the second oxygen absorption layer on layer, described the second oxygen is absorbed layer and is adopted TiN or TaN.
The manufacture method of 16. 1 kinds of semiconductor structures, described method comprises provides P type substrate, on described substrate, form successively dielectric layer, high k material layer, it is characterized in that, and described method also comprises:
On described high k material layer, form oxygen and absorb layer;
At described oxygen, absorb on layer and form metal gate layer;
On described metal gate layer, form high work function layer, the work function of wherein said high work function layer material therefor is greater than the work function of described metal gate layer material therefor;
Described oxygen is absorbed layer for absorbing the oxygen of described dielectric layer, high k material layer and/or described high work function layer part.
17. manufacture methods according to claim 16, is characterized in that, described oxygen is absorbed layer and comprised one deck or the above structure of one deck.
18. manufacture methods according to claim 17, is characterized in that, described oxygen is absorbed layer and comprised double-layer structure, and the described oxygen absorption layer that forms on described metal gate layer comprises:
On described high k material layer, adopt any one in Ti, Al, Hf or TiAl to form the first oxygen and absorb layer;
At described the first oxygen, absorb on layer and adopt TiN or TaN to form the second oxygen absorption layer.
19. 1 kinds of semiconductor structures, described semiconductor structure comprises P type substrate, is positioned at the dielectric layer on described substrate, high k material layer successively, it is characterized in that, and described semiconductor structure also comprises:
The oxygen being positioned on described high k material layer is absorbed layer, and described oxygen is absorbed any one in layer employing Ti, Al, Hf or TiAl;
Be positioned at described oxygen and absorb the metal gate layer on layer;
Be positioned at the oxygen barrier layers on described metal gate layer, described oxygen barrier layers adopts TiN or TaN;
And being positioned at the high work function layer on described oxygen barrier layers, the work function of wherein said high work function layer material therefor is greater than the work function of described metal gate layer material therefor.
The manufacture method of 20. 1 kinds of semiconductor structures, described method comprises provides P type substrate, on described substrate, form successively dielectric layer, high k material layer, it is characterized in that, and described method also comprises:
On described high k material layer, form oxygen and absorb layer, described oxygen is absorbed any one in layer employing Ti, Al, Hf or TiAl;
At described oxygen, absorb on layer and form metal gate layer;
On described metal gate layer, form oxygen barrier layers, described oxygen barrier layers adopts TiN or TaN;
On described oxygen barrier layers, form high work function layer, the work function of wherein said high work function layer material therefor is greater than the work function of described metal gate layer material therefor.
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| CN108666204A (en) * | 2017-04-01 | 2018-10-16 | 中芯国际集成电路制造(上海)有限公司 | The forming method of high-K dielectric layer, semiconductor devices and forming method thereof |
| CN113517284A (en) * | 2020-06-25 | 2021-10-19 | 台湾积体电路制造股份有限公司 | Semiconductor device and method of forming the same |
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