CN103681644B - There is the heat dissipation of improvement and the high-voltage LED of light extraction - Google Patents
There is the heat dissipation of improvement and the high-voltage LED of light extraction Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of illuminator.This illuminator includes polygon tube core.This polygon tube core includes multiple light emitting diode (LED).Each LED includes multiple epitaxial layer, and epitaxial layer includes p-type layer, n-layer and the MQW (MQW) being arranged between p-type layer and n-layer.Each LED includes p-type electrode and the n-type electrode electrically connected respectively with p-type layer and n-layer.Polygon tube core also includes that base station, each LED are connected with base station.P-type electrode and n-type electrode are between base station and epitaxial layer.Base station includes that multiple transport element, the plurality of transport element are configured to be electrically connected in series at least some of of multiple LED.Present invention also offers the high-voltage LED of heat dissipation and the light extraction with improvement.
Description
Cross reference to related applications
The application is in entitled " the High Voltage LED with of JIUYUE in 2012 submission on the 14th
Improved Heat Dissipation and Light Extraction " U.S. Provisional Patent Application
The patent application (attorney docket is 48047.137) of 61/701, No. 198, entire contents is passed through
Quote and be hereby expressly incorporated by reference.
Technical field
This invention relates generally to luminescent device, more particularly, to the heat dissipation, more with improvement
Effective light extraction and the high-voltage LED (LED) of preferably electrical connection.
Background technology
LED is semiconductor photonic device luminous upon application of a voltage.Owing to such as device size is little,
Life-span length, effective energy consumption and good durability and the favorable characteristics of reliability, LED more comes
The most welcome.Recent years, LED be applied to include inducer, light sensor, traffic lights,
The various use of broadband data transmission, the back light unit of LCD display and other suitable illuminators
In Tu.Such as, LED is commonly used to replace traditional incandescent lamp bulb (such as to make in typical lamp
Those) in the illuminator that provided.
But, existing LED still has the disadvantage in that.Such as, conventional high-voltage LED is configured to
Process high voltage (such as, hundreds of volt), but they can suffer from the most very poor heat dissipation and
The problem of electric fault frequently.Conventional flip-chip LED is likely to be of than conventional high-voltage LED
Preferably heat dissipation, but the flip-chip LED of routine can not process high pressure and have bad light
Extraction efficiency.And in addition to some in these problems discussed above, other kinds of LED
It is likely to need the cutting technique of difficulty.
Therefore, although existing LED is typically enough to meet their expection purpose, but they can not
Requirement is complied fully with at each aspect.Continue to seek there is more preferable heat dissipation, more effective light carries
Take and the high-voltage LED of more stable electrical connection.
Summary of the invention
In order to solve defect of the prior art, according to an aspect of the present invention, it is provided that a kind of illumination
Device, including: polygon tube core, including multiple light emitting diodes (LED), each LED bag
Including: multiple epitaxial layers, described epitaxial layer includes p-type layer, n-layer and is arranged on described p-type layer
And the MQW (MQW) between described n-layer；And p-type electrode and n-type electrode, respectively
Electrically connect with described p-type layer and described n-layer；Base station, each described LED is with described base station even
Connecing, described p-type electrode and described n-type electrode are between described base station and described epitaxial layer, described
Base station includes that multiple transport element, the plurality of transport element are configured to be electrically connected in series described many
Individual LED's is at least some of, and at least some time viewed from above, in the plurality of LED
There is non-rectangular shape.
In the luminaire, time viewed from above, LED described at least some has and remaining institute
State the different shape of LED.
In the luminaire, time viewed from above, it is many that LED described at least some has non-rectangle
Limit shape shape.
In the luminaire, time viewed from above, LED described at least some has some curl.
In the luminaire, the first distance of the first subset separating adjacent LED is adjacent more than separating
The second distance of second subset of LED.
In the luminaire, described illuminator includes multiple polygon tube core.
In the luminaire, described base station includes metal material, silicon-on-insulator, silicon submount, pottery
One in ceramic abutment or metal-core printed circuit board (MCPCB) base station.
In the luminaire, transport element described at least some includes: be formed in described silicon submount
The metal wire of interconnection layer of side or be formed at the plain conductor above described MCPCB base station.
In the luminaire, the plurality of LED includes X LED, selects quantity X so that
Described X LED has the maximum functional electricity of greater than about 170 volts when being electrically connected together in series
Pressure.
According to a further aspect in the invention, it is provided that a kind of illuminator, including: tube core, including many
Individual light emitting diode (LED), and each LED all includes: multiple epitaxial layers, described epitaxial layer
Including p doping III-V compound layer, n doping III-V compound layer and be arranged on institute
State the volume between the III-V compound layer of p doping and the III-V compound layer of described n doping
Sub-trap (MQW)；With the first electrode and the second electrode, the iii-v adulterated with described p respectively
The III-V compound layer electrical connection of compound layer and described n doping；And base station, connect with described tube core
Closing, described first electrode and described second electrode are between described base station and described epitaxial layer；Wherein,
At least one following situation is real: time viewed from above, some LED have and other LED
Different patterns；Time viewed from above, some LED have the polygonal shape of non-rectangle；And from
On when looking down, some LED have one or more curl.
In the luminaire, described base station includes multiple transport element, the plurality of transport element quilt
It is configured to the subset of the plurality of LED of major general be electrically connected together in series.
In the luminaire, described illuminator includes multiple polygon tube core, and described tube core is institute
State in polygon tube core.
In the luminaire, described base station includes metal material, silicon-on-insulator, silicon submount, pottery
One in ceramic abutment or metal-core printed circuit board (MCPCB) base station.
In the luminaire, transport element described at least some includes: be formed in described silicon submount
The metal wire of interconnection layer of side or be formed at the plain conductor above described MCPCB base station.
According to another aspect of the invention, it is provided that a kind of method manufacturing high-voltage LED device,
Described method includes: in growth substrates multiple extensions grown above during one or more epitaxy techniques
Layer, wherein, the plurality of epitaxial layer includes the III-V that III-V compound layer that p adulterate, n adulterate
Compounds of group layer and be arranged on described p doping III-V compound layer and described n doping III-V
MQW (MQW) between compounds of group layer；According to photoengraving pattern, removed described by etching
A part for described epitaxial layer above growth substrates is to form the gap between the LED separated, described
Pattern includes non-rectangle LED；P-type electrode and n-type electrode is formed above each described LED,
The III-V compound layer that described p-type electrode adulterates with described p electrically connects, and described n-type electrode
The III-V compound layer adulterated with described n electrically connects；Described LED is bonded to base station so that
After joint, described p-type electrode and described n-type electrode are between described base station and described epitaxial layer；
And it is the most thinning or remove described growth substrates.
In the method, implement to remove so that at least one situation is real below: from top to bottom
When seeing, at least some LED has the shape different from remaining LED；Time viewed from above, extremely
Fewer LED have the polygonal shape of non-rectangle；And time viewed from above, at least some LED
There is one or more curl.
In the method, described growth substrates includes sapphire material；Described base station include metal material,
In silicon-on-insulator, silicon submount, pottery base station and metal-core printed circuit board (MCPCB) base station
A kind of；Described base station includes multiple transport element；And implement to engage the son making the most described LED
Collection is electrically connected in series by described transport element.
In the method, the LED of multiple separation is the part of polygon tube core.
In the method, described joint includes wafer scale joint technology.
In the method, described joint includes die-level joint technology.
Accompanying drawing explanation
When reading in conjunction with the accompanying drawings, what the present invention may be better understood according to the following detailed description is each
Individual aspect.It is emphasized that according to the standard practices in industry, various parts are not necessarily to scale.
It practice, for the sake of understanding discussion, the size of various parts can be arbitrarily increased or reduced.
Fig. 1 is the schematic plan of high-voltage LED.
Fig. 2 is the top view of the wafer including multiple tube core according to various aspects of the invention.
Fig. 3 to Fig. 7 is the schematic section of the tube core including multiple LED according to various aspects of the invention
Side cross-sectional view.
Fig. 8 is the diagrammatic top of the exemplary die including multiple LED according to various aspects of the invention
Figure.
Fig. 9 be include the wafer of multiple tube core, the tube core included in the plurality of tube core of multiple LED,
Schematic plan with the exemplary shape of a LED in the plurality of LED.
Figure 10 is the signal of the lighting module of the tube core including Fig. 3 to Fig. 7 according to various aspects of the invention
Property side cross-sectional view.
Figure 11 is the lighting module of the LED light device including Figure 10 according to various aspects of the invention
Schematic diagram.
Figure 12 is the flow process illustrating the method manufacturing high-voltage LED illuminator according to various aspects of the invention
Figure.
Detailed description of the invention
It should be understood that for the different parts implementing each embodiment, disclosure below provides
Many different embodiments or example.The particular instance of element and layout is below described to simplify the present invention.
Certainly these are only that example is not intended to limit.Such as, the first component in below describing is formed at the
The top of two parts or on can form first component and second in the way of including wherein with directly contact
The embodiment of part, and may also be included in which that extra parts are formed at first component and second component
Between so that the embodiment that first component and second component are not directly contacted with.Furthermore, term " top ",
" bottom ", " in ... lower section ", " in ... top " etc. be to use for convenience and be not intended to by
The scope of embodiment is limited to any certain orientation.In order to concisely, it is also possible at random with different chis
Very little drafting all parts.It addition, the present invention can repeat reference numerals and/or letter in various embodiments.
This repetition merely to each embodiment of being discussed of simple and clear purpose and itself not specifying and/
Or the relation between structure.
Semiconductor device may be used for manufacturing the photonic device of such as light emitting diode (LED).Work as LED
During conducting, the radiation of the light of different colours in such as visible spectrum can be sent, and there is ultraviolet
Line or the radiation of Infrared wavelength.As compared to traditional light source (such as, incandescent lamp bulb), utilize LED
There is provided the most smaller as the illuminator of light source, energy consumption is lower, the life-span is longer, available face
Color is various and the persistent period is longer and the higher advantage of reliability.In recent years, these advantages
The progress in LED manufacture technology less expensive and more stable with making LED promotes LED-based photograph
Becoming increasingly popular of bright device.
But, existing LED still has the disadvantage in that.For example, referring to Fig. 1, it is shown that high-voltage LED
(HVLED) top view of tube core 20.HVLED tube core 20 includes being arranged on Sapphire Substrate 30
On multiple LED25.HVLED tube core 20 is configured to process high voltage, is greater than 12 volts
Special voltage.(electric conductor such as, is passed through by being electrically connected together in series by multiple LED25
35) HVLED tube core 20 is realized so that can be disperseed by each LED and undertake high pressure.So
And, HVLED tube core 20 has very poor heat dissipation.Thermally conductive pathways is to reach down to from LED25
Following Sapphire Substrate 30.Sapphire Substrate is bad heat conductor and the thickest, such as 100
To 200 microns (um).Due to bad heat conductivity and relatively long thermally conductive pathways, HVLED
Tube core can be prone to overheat.It addition, the electrical connection via electric conductor 35 is highly unstable.Electric conductor
35 can easily disconnect, and owing to all of LED25 is connected in series, so single disconnection
The defect of whole tube core 20 can be caused.
Flip-chip LED can have more preferable heat dissipation characteristics than HVLED20 discussed above.
But, this flip-chip LED is likely to be of other shortcomings.One shortcoming is owing to current crowding is asked
Topic, they trend towards having very poor light extraction efficiency.The further drawback of flip-chip LED is difficult real
Now their electrical connection.
According to embodiments of the invention, disclose the HVLED illuminator of a kind of improvement, this illumination
Device provides good heat dissipation, the hot extraction efficiency of improvement and one to stablize and be easily achieved and is electrically connected
The scheme connect.Referring to Fig. 1 to Fig. 9 discussion for manufacturing this HVLED according to some embodiments
Technique, this invention simplifies Fig. 1 to Fig. 9.
Referring now to Fig. 2, it is shown that the top view (or plane graph) of wafer 40.In some embodiments
In, wafer 40 includes the sapphire material being suitable for growing III-V material thereon.
III-V comprises the element of " III " race (or being) from the periodic table of elements and from element
Another element of " V " race (or being) of periodic chart.Such as, group-III element can include boron, aluminum,
Gallium, indium and titanium, and V group element can include nitrogen, phosphorus, arsenic, antimony and bismuth.
Wafer 40 includes multiple tube core 45, and (or die area, because in the fabrication stage shown in Fig. 2
It is on wafer 40 and does not the most grow III-V epitaxial layer).In order to provide example, it is shown that
Tube core 45, the true form of tube core 45 and size can change.Such as, although show tube core 45
Rectangular shape (in a top view), but tube core 45 can essentially have in various embodiments
Other polygonal shapes, such as triangle or hexagon.According to various aspects of the invention, each
Multiple LED is formed on tube core 45.For sake of simplicity, Fig. 3 to Fig. 7 illustrates is in each fabrication stage
The simplification side cross-sectional view of singulated dies 45.It should be understood that other tube cores 45 can experience identical
Manufacturing process.
Referring now to Fig. 3, tube core 45 includes growth substrates 50.As discussed above, growth substrates
50 can include the sapphire material being suitable for the III-V of epitaxial growth such as gallium nitride.
The thickness of substrate 50 can be in the range of about 50um to about 1000um.In certain embodiments,
Low temperature buffer film can be formed at the top of substrate 50.But, for sake of simplicity, be shown without herein
Low temperature buffer film.
Then, in grown above multiple extensions of growth substrates 50 during one or more epitaxy techniques
Layer 60.
Epitaxial layer 60 can include the unadulterated semiconductor layer being formed at above substrate 50.Undoped p
Semiconductor layer there is no p-type dopant or n-type dopant.In certain embodiments, unadulterated half
Conductor layer includes compound, and this compound comprises " III " race (or being) from the periodic table of elements
Element and another element of " V " race (or being) from the periodic table of elements, such as, unadulterated
Gallium nitride (GaN) material.Unadulterated semiconductor layer can serve as substrate 50 and will be unadulterated
Cushion (such as, in order to reduce stress) between the layer that the top of semiconductor layer is formed.In order to have
Effect ground implement its as function of cushion, unadulterated semiconductor layer have minimizing dislocation defects and
Good lattice structure quality.In certain embodiments, the thickness of unadulterated semiconductor layer is at about 1um
To about 5um.
Epitaxial layer 60 includes the III-V compound layer being formed at unadulterated semiconductor layer.III-V
Compounds of group layer doped with n-type dopant, such as carbon (C) or silicon (Si).In the present embodiment,
III-V compound layer includes gallium nitride (GaN), is therefore referred to as n-GaN layer.Implement at some
In example, the thickness of n-GaN layer is in the range of about 2um to about 6um.
Epitaxial layer 60 can include the prestrain layer being formed on n-GaN layer.Prestrain layer can adulterate
There is the n-type dopant of such as silicon.In various embodiments, prestrain layer can comprise multipair (such as
20 to 40 to) In alternatelyxGa1-xN and GaN sublayer, wherein, x is the least more than or equal to 0
In or equal to 1.Prestrain layer may be used for release strain and reduces quantum confined Stark effect
(QCSE) (impact of the optical absorption spectra of the external electrical field quantum well layer on being formed on is described).
In certain embodiments, the gross thickness of prestrain layer can be in about 30 nanometers (nm) to about 80nm
In the range of.
Epitaxial layer 60 includes MQW (MQW) layer being formed at above prestrain layer.Mqw layer
Including multiple (or staggered) active and barrier layers/sublayers alternately.Such as, active sublayer can include
Indium gallium nitride (InxGa1-xN), and barrier layers/sublayers can include gallium nitride (GaN).Implement at some
In example, the thickness of barrier layers/sublayers all can be in the range of about 2nm to about 5nm, and active sublayer
Thickness all can be in the range of about 4nm to about 17nm.
Alternatively, epitaxial layer 60 can include the electronic barrier layer being formed at above mqw layer.Electronics
Barrier layer contributes to electron hole carrier in conjunction with being limited in mqw layer 80, such that it is able to change
Enter the quantum efficiency of mqw layer and reduce the radiation of unexpected bandwidth.In certain embodiments, electronics
Barrier layer can include the In of dopingxAlyGa1-x-yN material, wherein, x and y both greater than or equal to 0 but
It is less than or equal to 1, and adulterant can include the p-type dopant of such as magnesium.The thickness of electronic barrier layer
Degree can be in the range of about 7nm to about 25nm.
Epitaxial layer 60 includes the III-V compound layer being formed at above electronic barrier layer.Iii-v chemical combination
Nitride layer is doped with p-type dopant.In the present embodiment, III-V compound layer includes gallium nitride
(GaN), p-GaN layer can be therefore referred to as.In certain embodiments, the thickness of p-GaN layer
In the range of about 150nm to about 200nm.
These epitaxial layers 60 constitute the core of LED.When the doped layer of LED is applied voltage (or
Electric charge) time, mqw layer sends the radiation of such as light.The color of the light that mqw layer sends corresponds to spoke
The wavelength penetrated.Radiation can be the invisible of the visible ray of such as blue light or such as ultraviolet (UV) light
Light.Can regulate by changing the Nomenclature Composition and Structure of Complexes of material of composition mqw layer light wavelength (because of
The color of this regulation light).
Referring now to Fig. 4, will by photoetching process (such as, by one or more etch process)
Epitaxial layer 60 is patterned as multiple mesa structure (mesa structures) 60A-60C.Mesa structure
60A-60C can also be referred to as LED or LED chip 60A-60C.Enforcement photoetching process makes can
With close to both the p-GaN layer of each LED60 and n-GaN layer.And, although Fig. 4's
Not shown in sectional view, but by regulation photoetching process (such as, by changing for photoetching process
In the pattern of photomask) shape of the top view of LED60A-60C can be configured flexibly.
Referring now to Fig. 5, add ons is formed on LED60A-60C with preparation discussed below
The LED60A-60C engaged with base station in joint technology.These add ons including but not limited to
Mirror layer 70, p-type electrode 75, n-type electrode 80, passivation layer 85, p-type jointing metal 90 and
N-shaped jointing metal 95.
Mirror layer 70 comprises radiant reflective material, such as, and the metal of such as aluminum or silver, thus will
The luminous reflectance that LED60 is sent returns LED60.
P-type electrode 75 and n-type electrode 80 comprise conductive material (such as, metal) thus respectively with
The p-GaN layer of LED60 and n-GaN layer provide electrical connection.Although the sectional view of Fig. 5 shows often
The single p-type electrode 75 of individual LED60 and single n-type electrode 80, it should be appreciated that, Ke Yi
More than one p-type electrode 75 or more than one n-type electrode 80 is formed on each LED60.
Passivation layer 85 is configured to protect the sudden and violent of LED60 and p-type electrode 75 and n-type electrode 80
Dew surface is from the granule in such as air and/or the pollution of dampness.In certain embodiments, passivation layer
85 comprise dielectric material.
P-type jointing metal 90 and N-shaped jointing metal 95 comprise metal material to promote p-type electrode 75
And the joint between n-type electrode 80 and base station, figure 6 illustrates base station and in further detail below
This base station is discussed.
Referring now to Fig. 6, by tube core 45 " above facing down " upset and and base station in joint technology
100 engage.In more detail, it is arranged on base with p-type electrode 75 after splicing and n-type electrode 80
Mode between platform 100 and LED60 (that is, epitaxial layer) passes through solder element 110 by tube core 45
LED60A-60C be bonded to base station 100.Base station 100 includes base station substrate 105, solder element
110, base station metal 115, circuit 120 and insulant 125.In certain embodiments, base station lining
The end 105, can include material based on metal, such as copper or aluminum.In other embodiments, base station lining
The end 105, can also include silicon-on-insulator (SOI).In an alternative embodiment, base station substrate is all right
It is silicon substrate, ceramic substrate or metal-core printed circuit board (MCPCB) substrate.
Insulant 125 can be formed at above base station substrate 100, and circuit 120 and base station gold
Belong to 115 to be formed in insulant thus the electrical wiring of LED is provided.Such as, circuit 120 can
To be formed in the metal wire in one or more interconnection layers of the interconnection structure above silicon substrate.As
Another example, circuit 120 can be formed in the plain conductor above PCB substrate, and such as copper is led
Line.In any case, before the joint technology with LED60 occurs, pre-shape on base station 100
Become circuit 120 and base station metal 115.After splicing, it is found that the p-GaN layer of LED and
N-GaN layer is by electrode 75/80, jointing metal 90/95, solder element 110 and base station metal 115
Electrically connect with circuit 120.
In certain embodiments, such as, in the embodiment shown in fig. 6, LED strip connection ground electrical connection
Together.That is, the p-GaN layer of a LED60 electrically connects with the n-GaN of adjacent LED60,
Vice versa.In this way it is possible to apply to be greater than about 50 to 100 to LED60 on the whole
The high pressure of volt (such as, 170 volts).Owing to being electrically connected in series, each LED60 only needs
Share a part of high pressure, e.g., from about 3 to 3.5 volts.Therefore, the LED being electrically connected together in series
The quantity of 60 is the most, and the voltage that they can be jointly processed by is the biggest.So, tube core 45 (includes many
Individual LED60) can act as high-voltage LED (HVLED), the voltage of the most up to 170 volts.
It can thus be stated that tube core 45 has the maximum working voltage of greater than about 170 volts.
Should find, establish the electrical connection between LED60 herein and do not use around each LED
The bonding wire formed and conductive tie layers.This is preferably as use bonding wire and conduction
Articulamentum can cause integrity problem.In some cases, bonding wire or conductive tie layers may be easily
In damaged (the most under conditions of high current) or peeling.Electrically connect with being additionally, since LED strip connection
Together, so the single fault of bonding wire or conductive tie layers can cause lacking of whole HVLED
Fall into.By contrast, herein by the most preformed circuit 120 in base station 100 before splicing
Electrical connection is set up with base station metal 115.Circuit 120 and base station metal 115 at tolerance unfavorable conditions and
High voltage/current conditions aspect is more reliable, is thus provided that the more stable electrical wiring scheme of LED60.
It addition, tube core 45 provides the light extraction efficiency of improvement due to its design.In more detail, each
LED is comparatively small mesa structure.Such as, compared with conventional flip-chip LED, desk-top
Structure has the lateral dimension (width) that may be significantly smaller.But, flip-chip LED is horizontal due to it
Big caused being prone to of epitaxial layer size has current crowding phenomenon, and LED mesa structure herein
The least lateral dimension decreases current crowding phenomenon significantly.On the contrary, current path will utilize basic
Upper all of epitaxial layer region.Correspondingly, epitaxial layer (especially mqw layer) can produce more
Light, thus improve the light extraction efficiency of tube core 45.To a certain extent, according to each of the present invention
Aspect even can segment LED mesa structure further, to improve the light extraction of tube core 45 further
Efficiency.
Although not clearly stating, it should be appreciated that, tube core can be implemented in wafer scale or die-level
45 with the joint of base station 100.In wafer scale joint technology, be formed above tube core 45 and other
The whole wafer (such as, the wafer 40 shown in Fig. 2) of similar tube core engages with base station 100.?
After joint, wafer cutting and additional encapsulation technique can be implemented after a while.In die-level joint technology,
Wafer can adhere on adhesive tape, then can be with cutting crystal wafer, so that each tube core 45 and adjacent pipe
Core separates.Each tube core engages with they respective element on base station independently (can also be simultaneously
Implement to engage).
Referring now to Fig. 7, such as, growth substrates can be removed from LED60 in laser lift-off
50.In some other embodiments, can be with thinning growth substrates 50.In order to the present invention is better described
Some design, Fig. 7 also illustrates that the heat dissipation path 150 for tube core 45, propagation path of light 155
With conductive path 160.
As shown in heat dissipation path 150, LED60 the heat generated is dissipated to downwards base station 100.
Distance between LED60 and base station is the shortest, and base station substrate 105 is the thinnest.Although this
Literary composition is not shown, but radiator can be arranged on below base station substrate 105.Therefore, by LED60
The heat generated arrive need not before base station substrate 105 to propagate far.It addition, along heat dissipation road
The various materials in footpath 150 have good heat conductivity, so that heat dissipation is the most effective.
As shown in propagation path of light 155, LED60 the light generated upwardly propagates away from base station 100.
The light of many small number is propagated all the most anti-by mirror layer 70 and electrode 80 in downwardly direction
It is emitted back towards.Owing to light propagation path expected from it being run into little obstruction, so light output can very
Good.As discussed above, the little lateral dimension of LED60 alleviates current-crowding effect and changes further
Enter the light extraction efficiency of LED60.
As shown in conductive path 160, electric current flows through circuit 120, base station metal 115, solder element
110, jointing metal 90 and 95, electrode 75 and 80 and epitaxial layer 60 (that is, LED).With
This mode, is electrically connected and does not use bonding wire or conductive layer (to be used for LED strip connection
Conventional HVLED) so that the electric conductivity of tube core 45 is more reliable and stable.It should be understood that
In some embodiments, it is not necessary to be electrically connected in series all of LED.On the contrary, in certain embodiments,
Only it is electrically connected in series the LED being chosen in subset.
Fig. 8 shows the simplified schematic top view of the tube core 45 according to some embodiments of the present invention.
In the embodiment shown in fig. 8, tube core 45 includes 18 LED (or LED chip) 60.Each
LED60 can be similar to LED60A-60C discussed above and can be according to identical technique
Manufacture.LED60 engages with the base station 100 including the base station substrate 105 shown in Fig. 6 and Fig. 7.
LED60 (or its subset) utilizes the transport element (conductive of the circuit 120 in such as base station 100
Component) being electrically connected together in series, such as, this transport element can include in interconnection layer
Copper conductor on metal wire or PCB.
As shown in plan view in figure 8, each LED60 has substantially triangular shape or pattern.
Can be said to arranging LED60.Compared with the LED that other are adjacent, the LED of every centering the most more connects
Nearly hithermost adjacent LED (that is, its gemel).Every couple of adjacent LED60 is the most common
Ground forms the pattern of the top view being similar to rectangular or square when.But, it is only used as example and shows this
Arrange, and LED can present any shape or physical dimension in other embodiments, and this is same
Sample is applicable to the pattern of the vertical view of tube core 45.
In order to above design is better described, Fig. 9 is according to this of wafer scale, die-level and chip-scale
Bright different embodiments show multiple top view.It is found that in wafer scale top view, wafer
Including multiple HVLED tube cores, each LED die can be similar with tube core 45 discussed above.
In die-level top view, each HVLED tube core can include multiple LED (or LED chip).
In a top view, each HVLED tube core can present rectangle, square, rhombus, hexagon,
Any other the suitable polygon that maybe can be provided by existing or exploitation in the future cutting technique.
In a top view, at chip-scale (that is, LED level) place, each LED can present rectangle,
Square, rhombus, triangle, hexagon, any other suitable polygon or even have one
Bar or a plurality of curl or edge irregularly shaped.Due to the fact that by photoetching process patterning LED
The LED of the present invention provides these diversified top view shapes, can regulate photoetching process (example
Pattern as by changing photomask) to realize any desired top view shapes of each LED.
In addition to top view shapes motility, each LED die all can present and remaining LED
The top view shapes that tube core is different.Such as, in singulated dies, a LED can have triangle
Top view shapes, another LED can have rectangular plan view shape, and another LED can have six
Limit shape top view shapes, and another LED can have not advising with at least one non-straight edges/edge
Then top view shapes.Consider according to design requirement and manufacture, can be configured to LED generate top view
Any layout of shape.The motility of the shape of LED or LED chip and multiformity can be brought such as
The advantage of the light extraction efficiency improved, more preferable heat dissipation etc..
In order to complete the manufacture of HVLED tube core 45, it is also possible to implement such as cutting, packaging and testing
The additional process of technique, but for succinct these techniques the most not shown.
HVLED tube core 45 can be realized as a part for illuminator.For example, it is possible to conduct
A part for LED-based illuminator 300 realizes HVLED tube core 45, and Figure 10 shows
The simplification sectional view of illuminator 300.The reality of the LED-based illuminator 300 shown in Figure 10
Execute example and include multiple LED60 of HVLED tube core 45, wherein, LED (or selected they
Subset) it is electrically connected together in series.Although the embodiment shown in Figure 10 illustrate only these LED
In 60 three, it should be appreciated that the LED that can implement any other quantity makes HVLED manage
Core can tolerate high pressure, such as, the voltage of up to 170 volts.
As discussed above, each LED60 includes III-V compound layer, the p that n adulterates
The III-V compound layer adulterated and the III-V compound layer being arranged on n doping and p are adulterated
Mqw layer between III-V compound layer.Due to the structure of LED60 discussed above, with biography
The LED of system compares, and the LED60 of HVLED herein provides more preferable heat dissipation, light extraction
With conduction reliability performance.
In certain embodiments, LED60 is respectively provided with the luminescent coating at applied atop.Luminescent coating can
To include phosphor material and/or fluorescent material.Can be at viscous fluid medium (such as, the liquid concentrated
Glue) in luminescent coating is coated on the surface of LED60.Fix due to viscous fluid or solidify, glimmering
Body of light material becomes a part for LED encapsulation piece.In actual LED application, luminescent coating can
Color for the light that conversion LED 60 is sent.Such as, luminescent coating can be by LED60 institute
The blue light sent is converted into the light of different wave length.Form by changing the material of luminescent coating, can obtain
The color of the expectation light that must be sent by LED60.
LED60 is arranged on base station 320.In certain embodiments, base station 320 is with discussed above
Base station 100 is similar to.Such as, base station 320 can include metal-core printed circuit board (MCPCB).
MCPCB includes the metal base can being made up of aluminum (or its alloy).MCPCB also includes setting
But put the dielectric layer of the heat conduction electric insulation on metal base.MCPCB can also include being arranged on Jie
The thin metal layer being made of copper in electric layer.In an alternative embodiment, base station 320 can include other
Suitably conductive structure, such as silicon submount or pottery base station.
Illuminator 300 includes spreading covering 350.Diffusion covering 350 provides following LED60
Lid.In other words, LED can jointly be encapsulated by diffusion covering 350 and substrate 320
60.In certain embodiments, diffusion covering 350 has surface or the profile of arc.Real at some
Executing in example, semicircular profile can be substantially followed on the surface of arc so that sent out by LED60
The often bundle light gone out can arrive diffusion with the angle of incidence (such as, within 90 several years) of perpendicular
The surface of covering 350.The arcuate shape of diffusion covering 350 contributes to reducing to be sent out by LED60
The total internal reflection (TIR) of the light gone out.
Diffusion covering 350 can have grain surface.Such as, grain surface can be coarse,
Maybe can comprise such as polygon or the multiple little pattern of circle.This grain surface contributes to disperseing LED
60 light sent make light be more evenly distributed.In certain embodiments, with comprising diffuser granule
Diffuser layer coating diffusion covering 350.
In certain embodiments, can be filled between LED60 and diffusion covering 350 by air
Space 360.In other embodiments, optical grade silica-based jointing material (also referred to as light can be passed through
Learn gel) carry out packing space 360.In this embodiment, phosphor particle may be combined in optics coagulate
To spread the light sent by LED60 further in glue.
Although shown embodiment shows all of LED being encapsulated in single diffusion covering 350
60, it should be appreciated that, multiple diffusion covering can be used in other embodiments.Such as, often
Individual LED60 can be encapsulated in corresponding in multiple diffusion covering.
Illuminator 300 can also optionally include catoptric arrangement 370.Catoptric arrangement 370 can be pacified
It is contained on substrate 320.In certain embodiments, catoptric arrangement be shaped like cup, the most also may be used
To be referred to as reflector.By top view, catoptric arrangement with 360 degree around or around LED60 and expansion
Dissipate covering 350.By top view, catoptric arrangement 370 can have circular contour, cellular six
Limit shape profile or another the suitable cellular profile around diffusion covering 350.In some embodiments
In, LED60 and diffusion covering 350 are positioned at the near-bottom of catoptric arrangement 370.In other words, instead
Penetrate the open top of structure 370 or upper shed is positioned on LED60 and diffusion covering 350 or on
Side.
Catoptric arrangement 370 operationally reflects the light propagated from from diffusion covering 350.At some
In embodiment, the inner surface of catoptric arrangement 370 is coated with such as aluminum, silver or the reflection of their alloy
Film.It should be understood that in certain embodiments, the surface of the sidewall of catoptric arrangement 370 is to be similar to expand
The mode of the grain surface dissipating covering 350 can be veined.Therefore, catoptric arrangement 370 can
Operatively implement the further scattering of the light sent by LED60, thus reduce illuminator 300
Light output intensity (glare) and make light output softer for human eye.In some embodiments
In, the sidewall of catoptric arrangement 370 has inclination or the profile of wedge shape.The wedge shape wheel of catoptric arrangement 370
Exterior feature improves the luminous reflectance efficiency of catoptric arrangement 370.
Illuminator 300 includes heat dissipation structure 380, also referred to as radiator 380.Radiator 380
By substrate 320 and LED60 (it produces heat in the course of the work) thermally coupled.In other words, dissipate
Hot device 380 is attached to substrate 320, or substrate 320 is positioned on the surface of radiator 380.Heat radiation
Device 380 is configured to promote that the dissipation of heat is in ambient air.Radiator 380 comprises such as metal material
Heat Conduction Material.The shape of radiator 380 and physical dimension can be designed to provide common bulb
Framework and diffuse out from LED60 simultaneously or derive heat.In order to strengthen heat transfer, radiator 380
Can have from the main body of radiator 380 multiple fins 390 outwardly.Fin 390 can have
Have be exposed to ambient air with contribute to heat transfer exhibiting high surface amass.
Figure 11 illustrates the lighting module 400 of some embodiments including illuminator 300 discussed above
Rough schematic view.Lighting module 400 has pedestal 410, is attached to the main body 420 of pedestal 410
With the lamp 430 being attached to main body 420.In certain embodiments, lamp 430 be Down lamp (or Down lamp shine
Bright module).Lamp 430 includes the illuminator 300 discussed above by reference to Figure 10.Lamp 430 is operable
Ground effectively projecting beam 440.It addition, compared with traditional incandescent lamp bulb, lamp 430 can provide more
Good persistency and longer life-span.It should be understood that other illumination application can be described above from utilizing
The present invention LED benefit.Such as, the LED of the present invention can apply to include, but is not limited to
Headlight for vehicle or taillight, vehicular meter panel display, the light source of projector, electronic device are (such as,
Liquid crystal display (LCD) TV or LCD monitor, panel computer, mobile phone or notebook electricity
Brain/portable computer) light source illumination application.
Figure 12 is to illustrate to manufacture high-voltage LED (HVLED) according to various aspects of the invention
The flow chart of the method for simplifying 500 of device.HVLED device can include one or more tube core, often
Individual tube core all includes multiple LED.
Method 500 includes step 510, wherein, in one or more epitaxy techniques, at growth lining
The end multiple epitaxial layers grown above.In certain embodiments, growth substrates includes sapphire material.Many
Individual epitaxial layer includes III-V compound layer, the III-V compound layer of n doping that p adulterates and sets
Put the Multiple-quantum between the III-V compound layer and the III-V compound layer of n doping of p doping
Trap (MQW).
Method 500 includes step 520, and wherein, epitaxial layer is converted into multiple separation by photoetching process
LED.The LED of multiple separation is a part for polygon tube core.In certain embodiments, implement
Conversion process in step 520 so that at least one following situation is real: in a top view,
At least some LED has the shape different from remaining LED；In a top view, at least some LED
There is non-rectangle polygon；And in a top view, at least some LED has one or more curl.
Method 500 includes step 530, and wherein, p-type electrode and n-type electrode are formed at each LED
Top.The III-V compound layer that p-type electrode adulterates with p electrically connects, and n-type electrode is mixed with n
Miscellaneous III-V compound layer electrical connection.
Method 500 includes step 540, and wherein, LED engages with base station so that p-type after joint
Electrode and n-type electrode are between base station and epitaxial layer.In certain embodiments, base station include based on
Metal material, silicon-on-insulator material, silicon submount, pottery base station or metal-core printed circuit board
(MCPCB) one in base station.In certain embodiments, base station includes multiple transport element.?
In some embodiments, implement the joint technology in step 540 and make the subset of at least LED by conduction
Element is electrically connected in series.In certain embodiments, the joint technology in step 540 includes wafer scale
Joint technology.In some other embodiments, the joint technology in step 540 includes that die-level engages
Technique.
Method 500 includes step 550, wherein, after joint in step 540, thinning or go
Except growth substrates.
Additional work is implemented before, during or after frame 510 to the frame 540 that can be discussed in this article
Skill is to complete the manufacture of photonic device.For sake of simplicity, the most do not discuss these other techniques in detail.
One aspect of the present invention relates to a kind of illuminator.This illuminator includes: include multiple
The polygon tube core of optical diode (LED), wherein, each LED all includes: multiple epitaxial layers,
Epitaxial layer includes p-type layer, n-layer and the MQW being arranged between p-type layer and n-layer
(MQW)；The p-type electrode electrically connected with p-type layer and n-layer respectively and n-type electrode.This photograph
Bright device also includes that base station, each LED are all connected with this base station, wherein, and p-type electrode and N-shaped electricity
Pole is between base station and epitaxial layer, and wherein, base station includes multiple transport element, the plurality of conduction unit
Part is configured to be electrically connected in series at least some of of multiple LED, and wherein, multiple LED are extremely
Some have non-rectangle top view shapes less.
In certain embodiments, at least some LED has the vertical view figure different from remaining LED
Shape.
In certain embodiments, at least some LED has non-rectangle polygon top view shapes.
In certain embodiments, in a top view, at least some LED has some curl.
In certain embodiments, the first distance of the first subset separating adjacent LED is adjacent more than separating
The second distance of second subset of LED.
In certain embodiments, illuminator includes multiple polygon tube core.
In certain embodiments, base station include material based on metal, silicon-on-insulator, silicon submount,
One in pottery base station or metal-core printed circuit board (MCPCB) base station.In certain embodiments,
At least some transport element includes: is formed at the metal wire of interconnection layer above silicon submount, or is formed at
Plain conductor above MCPCB base station.
In certain embodiments, multiple LED include the LED of X quantity, wherein carry out quantity X
Select to make the LED of X quantity have greater than about 170 volts when being electrically connected together in series
Big running voltage.
One aspect of the present invention relates to a kind of illuminator.This illuminator includes: tube core, including
Multiple light emitting diodes (LED), wherein, each LED includes: multiple epitaxial layers, epitaxial layer
Including III-V compound layer, the III-V compound layer of n doping of p doping be arranged on p and mix
MQW between the III-V compound layer of miscellaneous III-V compound layer and n doping
(MQW)；The III-V that III-V compound layer and n with p doping adulterates respectively
First electrode of layer electrical connection and the second electrode.Illuminator also includes base station, engages with tube core, its
In, the first electrode and the second electrode are between base station and epitaxial layer；Wherein, following at least one
Situation is real: in a top view, and some LED have the pattern different from other LED；?
In top view, some LED have non-rectangle polygon pattern；And in a top view, some LED
There is one or more curved edge.
In certain embodiments, base station includes that multiple transport element, the plurality of transport element are configured to
Subset to the multiple LED of major general is electrically connected together in series.
In certain embodiments, illuminator includes multiple polygon tube core, and described tube core is polygon
In tube core one.
In certain embodiments, base station includes material based on metal, silicon-on-insulator material, silica-based
One in platform, pottery base station or metal-core printed circuit board (MCPCB) base station.Implement at some
In example, at least some transport element includes: be formed at metal wire or the shape of interconnection layer above silicon submount
Become the plain conductor above MCPCB base station.
Another aspect of the present invention relates to a kind of method manufacturing high-voltage LED device.The method
Including: at grown above multiple epitaxial layers of growth substrates during one or more epitaxy techniques, its
In, multiple epitaxial layers include III-V compound layer, the III-V of n doping that p adulterates
Layer and be arranged on p doping III-V compound layer and n doping III-V compound layer between
MQW (MQW)；The epitaxial layer above growth substrates is removed by the etching according to photoengraving pattern
A part with formed separate LED between space, pattern includes non-rectangle LED；Each
The top of LED forms p-type electrode and n-type electrode, wherein, the iii-v that p-type electrode adulterates with p
Compound layer electrically connects, and the III-V compound layer that n-type electrode is adulterated with n electrically connects；Will
LED is bonded to after base station makes to engage, p-type electrode and n-type electrode be positioned at base station and epitaxial layer it
Between；And then, thinning or removal growth substrates.
In certain embodiments, implement to be converted into epitaxial layer the LED of multiple separation make following extremely
Few a kind of situation is real: in a top view, at least some LED has with remaining LED not
Same shape；In a top view, at least some LED has non-rectangle polygonal shape；And bowing
In view, at least some LED has one or more curl.
In certain embodiments, growth substrates includes sapphire material；Base station includes material based on metal
Material, silicon-on-insulator material, silicon submount, pottery base station or metal-core printed circuit board (MCPCB)
One in base station；Base station includes multiple transport element；And implement to engage the son making at least LED
Collection is electrically connected in series by transport element.
In certain embodiments, the LED of multiple separation is a part for polygon tube core.
In certain embodiments, joint includes wafer scale joint technology.
In certain embodiments, joint includes die-level joint technology.
The feature of some embodiment is discussed above so that those of ordinary skill in the art may be better understood
The following detailed description.It will be understood by those skilled in the art that and the present invention can be used easily to make
Based on design or change other for reaching the purpose identical with embodiments described herein and/or reality
The technique of existing same advantage and structure.Those of ordinary skill in the art are it should also be appreciated that this equivalent constructions
Without departing from the spirit and scope of the present invention, and without departing from the spirit and scope of the present invention,
Multiple change can be carried out herein, replace and change.
Claims (20)
1. an illuminator, including:
Polygon tube core, including multiple light emitting diodes (LED), each LED includes:
Multiple epitaxial layers, described epitaxial layer includes p-type layer, n-layer and is arranged on described p
MQW (MQW) between type layer and described n-layer；And
P-type electrode and n-type electrode, electrically connect with described p-type layer and described n-layer respectively；
Base station, each described LED is connected with described base station, described p-type electrode and described N-shaped electricity
Pole is between described base station and described epitaxial layer, and described base station includes multiple transport element, described many
Individual transport element is configured to be electrically connected in series at least some of of the plurality of LED, and from upper
When looking down, at least some in the plurality of LED has non-rectangular shape.
Illuminator the most according to claim 1, wherein, time viewed from above, at least some
Described LED has and remaining shape different for described LED.
Illuminator the most according to claim 1, wherein, time viewed from above, at least some
Described LED has the polygonal shape of non-rectangle.
Illuminator the most according to claim 1, wherein, time viewed from above, at least some
Described LED has some curl.
Illuminator the most according to claim 1, wherein, separates the first son of adjacent LED
First distance of collection is more than the second distance of the second subset separating adjacent LED.
Illuminator the most according to claim 1, wherein, described illuminator includes multiple many
Limit shape tube core.
Illuminator the most according to claim 1, wherein, described base station include metal material,
In silicon-on-insulator, silicon submount, pottery base station or metal-core printed circuit board (MCPCB) base station
A kind of.
Illuminator the most according to claim 7, wherein, transport element bag described at least some
Include: be formed at the metal wire of the interconnection layer above described silicon submount or be formed at described metal-cored printing electricity
Plain conductor above the plate base station of road.
Illuminator the most according to claim 1, wherein, the plurality of LED includes X
LED, selects quantity X so that described X LED has when being electrically connected together in series and be more than
The maximum working voltage of 170 volts.
10. an illuminator, including:
Tube core, including multiple light emitting diodes (LED), and each LED all includes:
Multiple epitaxial layers, described epitaxial layer includes III-V compound layer, the n doping that p adulterates
III-V compound layer and be arranged on the III-V compound layer and described of described p doping
MQW (MQW) between the III-V compound layer of n doping；With
First electrode and the second electrode, the III-V compound layer adulterated with described p respectively and institute
State the III-V compound layer electrical connection of n doping；And
Base station, engages with described tube core, and described first electrode and described second electrode are positioned at described base station
And between described epitaxial layer；
Wherein, at least one following situation is real:
Time viewed from above, some LED have the pattern different from other LED；
Time viewed from above, some LED have the polygonal shape of non-rectangle；And
Time viewed from above, some LED have one or more curl.
11. illuminators according to claim 10, wherein, described base station includes multiple conduction
Element, the plurality of transport element is configured to the subset of the plurality of LED of major general in series be electrically connected
It is connected together.
12. illuminators according to claim 10, wherein, described illuminator includes multiple
Polygon tube core, described tube core is in described polygon tube core.
13. illuminators according to claim 11, wherein, described base station include metal material,
In silicon-on-insulator, silicon submount, pottery base station or metal-core printed circuit board (MCPCB) base station
A kind of.
14. illuminators according to claim 13, wherein, transport element described at least some
Including: it is formed at the metal wire of the interconnection layer above described silicon submount or is formed at described metal-cored printing
Plain conductor above circuit board base station.
15. 1 kinds of methods manufacturing high-voltage LED device, described method includes:
At growth substrates multiple epitaxial layers grown above during one or more epitaxy techniques, wherein,
The plurality of epitaxial layer includes III-V compound layer, the III-V of n doping that p adulterates
Layer and be arranged on described p doping III-V compound layer and described n doping iii-v chemical combination
MQW (MQW) between nitride layer；
According to photoengraving pattern, by one of the described epitaxial layer above the etching described growth substrates of removal
Dividing to form the gap between the LED separated, described pattern includes non-rectangle LED；
P-type electrode and n-type electrode, described p-type electrode and institute is formed above each described LED
State the III-V compound layer electrical connection of p doping, and described n-type electrode and described n doping
III-V compound layer electrically connects；
Described LED is bonded to base station so that described p-type electrode and described n-type electrode after joint
Between described base station and described epitaxial layer；And
The most thinning or remove described growth substrates.
16. methods according to claim 15, wherein, implement to remove so that below at least one
The situation of kind is real:
Time viewed from above, at least some LED has the shape different from remaining LED；
Time viewed from above, at least some LED has the polygonal shape of non-rectangle；And
Time viewed from above, at least some LED has one or more curl.
17. methods according to claim 15, wherein:
Described growth substrates includes sapphire material；
Described base station includes metal material, silicon-on-insulator, silicon submount, pottery base station and metal-cored print
One in printed circuit board (MCPCB) base station；
Described base station includes multiple transport element；And
Implementing to engage makes the subset of the most described LED be electrically connected in series by described transport element.
18. methods according to claim 15, wherein, the LED of multiple separation is polygon
The part of tube core.
19. methods according to claim 15, wherein, described joint includes that wafer scale engages work
Skill.
20. methods according to claim 15, wherein, described joint includes that die-level engages work
Skill.
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| CN201610565376.6A CN106206558B (en) | 2012-09-14 | 2013-06-25 | High-voltage LED with improved heat dissipation and light extraction |
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| US201261701198P | 2012-09-14 | 2012-09-14 | |
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| US13/790,092 US9076950B2 (en) | 2012-09-14 | 2013-03-08 | High voltage LED with improved heat dissipation and light extraction |
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| TW201618340A (en) * | 2014-11-14 | 2016-05-16 | Turnray Energy Tech Ltd | Light emitting diode and illumination device thereof |
| CN104676320B (en) * | 2015-01-13 | 2017-02-01 | 中国科学院半导体研究所 | Flexible light-emitting device array and manufacture method thereof |
| KR101970249B1 (en) * | 2017-05-29 | 2019-04-18 | 엘지전자 주식회사 | Lamp for vehicle and vehicle |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1510765A (en) * | 2002-12-26 | 2004-07-07 | 炬鑫科技股份有限公司 | Gallium nitride of group III-V compound semiconductor LED luminating device and manufacture thereof |
| CN1855564A (en) * | 2005-04-26 | 2006-11-01 | 住友电气工业株式会社 | Light-emitting device, method for making the same, and nitride semiconductor substrate |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4589745A (en) * | 1985-01-25 | 1986-05-20 | Polaroid Corporation | Geometric LED layout for line exposure |
| CN100421266C (en) * | 2002-08-29 | 2008-09-24 | 首尔半导体股份有限公司 | Light-emitting device having light-emitting elements |
| EP1482566A3 (en) * | 2003-05-28 | 2004-12-08 | Chang Hsiu Hen | Light emitting diode electrode structure and full color light emitting diode formed by overlap cascaded die bonding |
| WO2005029185A2 (en) * | 2003-09-16 | 2005-03-31 | Matsushita Electric Industrial Co., Ltd. | Led lighting source and led lighting apparatus |
| WO2006038713A1 (en) * | 2004-10-07 | 2006-04-13 | Showa Denko K.K. | Production method for semiconductor device |
| JP4995722B2 (en) * | 2004-12-22 | 2012-08-08 | パナソニック株式会社 | Semiconductor light emitting device, lighting module, and lighting device |
| US7221044B2 (en) * | 2005-01-21 | 2007-05-22 | Ac Led Lighting, L.L.C. | Heterogeneous integrated high voltage DC/AC light emitter |
| TWM278828U (en) * | 2005-05-11 | 2005-10-21 | Shiu Yung Yuan | LED planar light source module |
| US20060255352A1 (en) * | 2005-05-11 | 2006-11-16 | Quasar Optoelectronics, Inc. | Light emitting diode light source model |
| KR101156452B1 (en) * | 2005-08-25 | 2012-06-13 | 서울옵토디바이스주식회사 | Luminous element with a plurality of cells bonded |
| EP2081238A1 (en) * | 2006-11-08 | 2009-07-22 | C. I. Kasei Company, Limited | Light emitting device and method for manufacturing the same |
| US9018833B2 (en) * | 2007-05-31 | 2015-04-28 | Nthdegree Technologies Worldwide Inc | Apparatus with light emitting or absorbing diodes |
| US8058669B2 (en) * | 2008-08-28 | 2011-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light-emitting diode integration scheme |
| US8865489B2 (en) * | 2009-05-12 | 2014-10-21 | The Board Of Trustees Of The University Of Illinois | Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays |
| WO2011007816A1 (en) * | 2009-07-15 | 2011-01-20 | 三菱化学株式会社 | Semiconductor light-emitting element, semiconductor light-emitting device, method for manufacturing semiconductor light-emitting element, and method for manufacturing semiconductor light-emitting device |
| JP2011199221A (en) * | 2010-03-24 | 2011-10-06 | Hitachi Cable Ltd | Light emitting diode |
| TWI451596B (en) * | 2010-07-20 | 2014-09-01 | Epistar Corp | An array-type led device |
| US8653542B2 (en) * | 2011-01-13 | 2014-02-18 | Tsmc Solid State Lighting Ltd. | Micro-interconnects for light-emitting diodes |
-
2013
- 2013-06-25 CN CN201310256601.4A patent/CN103681644B/en active Active
- 2013-06-25 CN CN201610565376.6A patent/CN106206558B/en active Active
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1510765A (en) * | 2002-12-26 | 2004-07-07 | 炬鑫科技股份有限公司 | Gallium nitride of group III-V compound semiconductor LED luminating device and manufacture thereof |
| CN1855564A (en) * | 2005-04-26 | 2006-11-01 | 住友电气工业株式会社 | Light-emitting device, method for making the same, and nitride semiconductor substrate |
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| TWI566432B (en) | 2017-01-11 |
| CN106206558A (en) | 2016-12-07 |
| CN103681644A (en) | 2014-03-26 |
| TWI499084B (en) | 2015-09-01 |
| TWI632695B (en) | 2018-08-11 |
| TW201709557A (en) | 2017-03-01 |
| TW201541664A (en) | 2015-11-01 |
| TW201417337A (en) | 2014-05-01 |
| CN106206558B (en) | 2019-04-09 |
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