CN103677966B - EMS memory management process and system - Google Patents
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- CN103677966B CN103677966B CN201210319287.5A CN201210319287A CN103677966B CN 103677966 B CN103677966 B CN 103677966B CN 201210319287 A CN201210319287 A CN 201210319287A CN 103677966 B CN103677966 B CN 103677966B
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Abstract
The present invention relates to a kind of EMS memory management process and systems.The EMS memory management process is the following steps are included: monitor the temperature value of memory place environment；Judge whether the temperature value is less than preset minimum operating temperature or is greater than preset maximum operating temperature, if so, the refreshing frequency of the memory is adjusted to refreshing frequency corresponding with the temperature value.Above-mentioned EMS memory management process and system, when monitoring temperature value is less than minimum operating temperature, the refreshing frequency for adjusting memory is refreshing frequency corresponding with the temperature value, before the data that may make in memory do not drop to threshold voltage or less, read the data of memory, avoid the occurrence of read error, when environment temperature is lower than minimum operating temperature or is higher than maximum operating temperature, it is not required to design additional heater circuit in low temperature and internally deposits into capable heating, or capable cooling is internally deposited at high temperature, also it is not required to choose expensive memory adaptation low temperature and hot environment, it reduces costs, and the operating temperature range of memory is widened.
Description
Technical field
The present invention relates to computer technologies, more particularly to a kind of EMS memory management process and system.
Background technique
Memory is the important component in computer system architecture, it realizes the store function of data: storage original number
According to the buffer cell of, intermediate data and operation result etc. and high speed execution unit and external low speed storage device.
According to reading manner, memory is divided into read-only memory (Read Only Memory, abbreviation ROM) and random access memory
(Random Access Memory, abbreviation RAM), since the zero access of RAM, access time are equal and unrelated with address etc.
Advantage, memory generally realize that RAM relies on capacitor charging/discharging principle storing data, and passes through a n-channel MOS's with RAM
Electric transistor (nMOS) realizes the reading of data to the switch control of capacitor, but due to reducing MOS leakage current with temperature
Increase, so that electricity on capacitor is released faster, cause when needing to read data, electricity is lower than effective voltage on capacitor, makes data
Read error.
Currently, mainly using two ways to use memory in the environment of low temperature, the first is using wide temperature model
The memory chip of adaptation is enclosed, such as the manufacturer having releases -40 DEG C ~+85 DEG C technical grade memory chips, but such product type is few,
Working frequency is lower than conventional frequency, and expensive；Second of use external auxiliary heating device, internally deposits into capable heating, when
It monitoring that environment file rises to permission operating temperature, then is powered on work, which is attached with cumbersome peripheral control circuits, and
In order to enable temperature to be effectively passed to memory, the structure for changing memory is generally required, cost is increased.
Summary of the invention
Based on this, it is necessary to a kind of EMS memory management process is provided, can make it is interior there are working normally in wide temperature range, and
Cost is relatively low.
A kind of EMS memory management process, comprising the following steps:
The temperature value of environment where monitoring memory；
Judge whether the temperature value is less than preset minimum operating temperature or is greater than preset maximum operating temperature, if
It is that the refreshing frequency of the memory is then adjusted to refreshing frequency corresponding with the temperature value.
The refreshing frequency by the memory is adjusted to brush corresponding with the temperature value in one of the embodiments,
The step of new frequency includes:
It is found in the corresponding relationship between preset temperature and RAM refresh frequency according to the temperature value corresponding
Refreshing frequency；
The refreshing frequency of the memory is adjusted to the corresponding refreshing frequency found.
It further include step in one of the embodiments, before described the step of monitoring the temperature value of environment where memory
It is rapid:
Pre-establish the corresponding relationship between corresponding table and temperature and RAM refresh frequency, and by the temperature and memory
Corresponding relationship between refreshing frequency is stored in the corresponding table；
It is found in the corresponding relationship between preset temperature and RAM refresh frequency according to the temperature value corresponding
The step of refreshing frequency specifically:
According to the temperature value from corresponding between the preset temperature and RAM refresh frequency stored in the corresponding table
Corresponding refreshing frequency is found in relationship.
Described the step of pre-establishing the corresponding relationship between temperature and RAM refresh frequency in one of the embodiments,
Include:
Selected temperature；
The bit error rate of multiple test memory under different refreshing frequencys forms data distribution curve；
Corresponding refreshing frequency is determined according to the lowest bit error rate of the data distribution curve of the statistics and permission；
Establish the corresponding relationship between temperature and the refreshing frequency of corresponding memory.
It is adjusted in one of the embodiments, in the refreshing frequency by the memory corresponding with the temperature value
After the step of refreshing frequency, further comprise the steps of:
The temperature value of environment where interval monitoring memory at preset timed intervals.
In addition, there is a need to provide a kind of internal storage management system, can make it is interior there are being worked normally in wide temperature range, and
Cost is relatively low.
A kind of internal storage management system, comprising:
Temperature monitoring module, the temperature value for environment where monitoring memory；
Memory control module for judging whether the temperature value is less than preset minimum operating temperature, or is greater than pre-
If maximum operating temperature, if so, the refreshing frequency of the memory is adjusted to refreshing frequency corresponding with the temperature value.
In one of the embodiments, the Memory control module be also used to according to the temperature value from preset temperature with
Corresponding refreshing frequency is found in corresponding relationship between RAM refresh frequency, and the refreshing frequency of the memory is adjusted
For the corresponding refreshing frequency found.
In one of the embodiments, further include:
Creation module, for pre-establishing the corresponding relationship between corresponding table and temperature and RAM refresh frequency, and will
Corresponding relationship between the temperature and RAM refresh frequency is stored in the corresponding table；
Preset temperature that the Memory control module is also used to be stored from the corresponding table according to the temperature value with
Corresponding refreshing frequency is found in corresponding relationship between RAM refresh frequency.
The creation module includes: in one of the embodiments,
Chosen module is used for selected temperature；
Statistical module forms data distribution curve for the bit error rate of test memory multiple under different refreshing frequencys；
Analysis module, for determining corresponding refresh frequently according to the data distribution curve of statistics and the lowest bit error rate of permission
Rate；
Relationship establishes module, the corresponding relationship for establishing between temperature and the refreshing frequency of corresponding memory.
The temperature detecting module is also used to be spaced ring where monitoring memory at preset timed intervals in one of the embodiments,
The temperature value in border.
Above-mentioned EMS memory management process and system adjust the refreshing of memory when monitoring temperature value is less than minimum operating temperature
Frequency is refreshing frequency corresponding with the temperature value, before the data that may make in memory do not drop to threshold voltage or less, is read
The data of memory, avoid the occurrence of read error, when environment temperature is lower than minimum operating temperature or is higher than maximum operating temperature, no
Additional heater circuit need to be designed in low temperature and internally deposits into capable heating, or internally deposits into capable cooling at high temperature, be also not required to select
It takes expensive memory to adapt to low temperature and hot environment, reduces costs, and widened the operating temperature range of memory.
Detailed description of the invention
Fig. 1 is the flow chart of EMS memory management process in one embodiment；
Fig. 2 is that the refreshing frequency of memory is adjusted to the specific of refreshing frequency corresponding with the temperature value in one embodiment
Flow chart；
Fig. 3 is the detailed process that the corresponding relationship between temperature and RAM refresh frequency is pre-established in one embodiment
Figure；
Fig. 4 is the schematic diagram of refreshing frequency under low temperature before not changing preceding capacitance voltage change curve and not changing；
Fig. 5 be after change after capacitance voltage change curve and change under low temperature refreshing frequency schematic diagram；
Fig. 6 is the schematic diagram of internal structure of internal storage management system in one embodiment；
Fig. 7 is the schematic diagram of internal structure of internal storage management system in another embodiment；
Fig. 8 is the schematic diagram of internal structure of creation module in one embodiment.
Specific embodiment
Detailed retouch is carried out to the technical solution of EMS memory management process and system below with reference to specific embodiment and attached drawing
It states, so that it is clearer.
As shown in Figure 1, in one embodiment, a kind of EMS memory management process, comprising the following steps:
Step S110, the temperature value of environment where monitoring memory.
Specifically, the temperature value of the environment where memory can be realized by temperature monitoring module, as temperature monitoring module can
To be temperature sensor or the monitoring temperature chip for being internally integrated PN junction etc., which can be thermistor or PN junction.
By temperature sensor temperature collection analog signal, temperature digital signal is then converted to by analog-digital converter, then by temperature
Digital signal passes to computer system；Or it is detected by monitoring temperature chip and is passed through after being converted to temperature digital signal
I2C bus transfer is to computer system.
Step S120, judges whether the temperature value of the monitoring is less than preset minimum operating temperature, or is greater than preset
Maximum operating temperature, if so, S130 is thened follow the steps, if it is not, thening follow the steps S140.
Specifically, memory is worked normally there are a temperature range, such as 10 DEG C ~ 80 DEG C, 10 DEG C are minimum work temperature
Degree, 80 DEG C are maximum operating temperature, when lower than minimum operating temperature or higher than maximum operating temperature, in fact it could happen that reading data
Mistake.
The refreshing frequency of memory is adjusted to refreshing frequency corresponding with the temperature value by step S130.
Step S140 runs computer system, is read out to the data of memory.
Specifically, when the temperature value of the environment of monitoring is more than or equal to minimum operating temperature less than or equal to maximum operating temperature,
I.e. the temperature value of environment is located within the scope of minimum operating temperature to maximum operating temperature, directly operation computer system, to memory
Data be read out.
In one embodiment, as shown in Fig. 2, above-mentioned EMS memory management process, step S130 include:
Step S131 finds phase in the corresponding relationship between preset temperature and RAM refresh frequency according to temperature value
The refreshing frequency answered.
Specifically, pre-establish the corresponding relationship between corresponding table and temperature and RAM refresh frequency, and by temperature with
Corresponding relationship between RAM refresh frequency is stored in the corresponding table, is then stored from the correspondence table further according to temperature value
Preset temperature and RAM refresh frequency between corresponding relationship in find corresponding refreshing frequency.
The refreshing frequency of memory is adjusted to the corresponding refreshing frequency found by step S133.
Specifically, computer pair can be opened after the refreshing frequency of memory is adjusted to the corresponding refreshing frequency found
Memory is read out data.
As shown in figure 3, in one embodiment, above-mentioned EMS memory management process pre-establishes temperature and RAM refresh frequency
Between corresponding relationship the step of include:
Step S210, selected temperature.
Specifically, a certain temperature value is selected, such as -10 DEG C.
Step S220, the bit error rate of multiple test memory under different refreshing frequencys form data distribution curve.
Specifically, adjust the refreshing frequency of memory after selected temperature, the then multiple test memory under the refreshing frequency
The bit error rate forms data distribution curve.
Step S230 determines corresponding refreshing frequency according to the lowest bit error rate of the data distribution curve of statistics and permission.
Specifically, the lowest bit error rate allowed can be set according to the bit error rate allowed under normal working temperature, such as permit
Perhaps lowest bit error rate can be 1/several00000000.If there are multiple refreshing frequencys for meeting lowest bit error rate, refreshing frequency is chosen
It is the smallest to be used as the corresponding refreshing frequency of the temperature, it avoids improving the performance requirement to other hardware devices.
Step S240 establishes the corresponding relationship between temperature and the refreshing frequency of corresponding memory.
Specifically, being established between temperature and the refreshing frequency after calculating the refreshing frequency of the corresponding memory of a certain temperature
Corresponding relationship, repetitive operation establishes the corresponding relationship between all temperature and refreshing frequency.
Further, in one embodiment, above-mentioned EMS memory management process is adjusted to and temperature by the refreshing frequency of memory
After the step of angle value corresponding refreshing frequency, the temperature of environment where interval monitoring memory at preset timed intervals is further comprised the steps of:
Value.
Specifically, the temperature value of environment where periodic monitoring memory, the refreshing frequency of memory can be accurately adjusted, in guarantee
The data deposited are read out, not easy to make mistakes.Preset interval time can be set as needed, such as 30 minutes.
Fig. 4 is the schematic diagram of refreshing frequency under low temperature before not changing preceding capacitance voltage change curve and not changing, in low temperature
In the case of (such as -10 DEG C), before refresh signal arrival, if the data in memory have been reduced to threshold voltage hereinafter, reading at this time
Access evidence, will lead to mistake.Fig. 5 be after change after capacitance voltage change curve and change under low temperature refreshing frequency signal
Figure after changing refreshing frequency, has had read data before the data of memory are down to threshold voltage or less, that is, has improved refreshing frequency
Rate.When being similarly higher than maximum temperature, it also will appear reading error in data, read error can be changed after adjusting refreshing frequency
It is kind.
As shown in fig. 6, in one embodiment, a kind of internal storage management system, including temperature monitoring module 110, memory control
Molding block 120.Wherein:
The temperature value of environment where temperature monitoring module 110 is used to monitor memory.
Specifically, temperature monitoring module 110 can be the prison such as temperature sensor or the monitoring temperature chip for being internally integrated PN junction
Measurement equipment.The temperature sensor can be thermistor or PN junction.By temperature sensor temperature collection analog signal, then pass through
Analog-digital converter is converted to temperature digital signal, then temperature digital signal is passed to computer system；Or it is supervised by temperature
Control chip is detected and is converted to after temperature digital signal through I2C bus transfer to computer system.
Memory control module 120 is used to judge whether the temperature value of monitoring is less than preset minimum operating temperature, Huo Zhe great
In preset maximum operating temperature, if so, the refreshing frequency of memory is adjusted to refreshing frequency corresponding with the temperature value.
Specifically, memory is worked normally there are a temperature range, such as 10 DEG C ~ 80 DEG C, 10 DEG C are minimum work temperature
Degree, 80 DEG C are maximum operating temperature, when lower than minimum operating temperature or higher than maximum operating temperature, in fact it could happen that reading data
Mistake.Then, it computer can be opened internally deposits and be read out data.
Further, in one embodiment, Memory control module 120 is also used to according to the temperature value from preset temperature
Corresponding refreshing frequency is found in corresponding relationship between RAM refresh frequency, and the refreshing frequency of memory is adjusted to
The corresponding refreshing frequency found.
In addition, after the refreshing frequency of memory is adjusted to the corresponding refreshing frequency found by Memory control module 120, it can
Unlatching computer, which is internally deposited, is read out data.
As shown in fig. 7, in one embodiment, above-mentioned internal storage management system, in addition to including temperature monitoring module 110 and interior
Control module 120 is deposited, further includes creation module 130.Wherein:
Creation module 130 is used to pre-establish the corresponding relationship between corresponding table and temperature and RAM refresh frequency, and
Corresponding relationship between temperature and RAM refresh frequency is stored in the corresponding table.
The preset temperature and memory brush that Memory control module 120 is also used to be stored from the correspondence table according to the temperature value
Corresponding refreshing frequency is found in corresponding relationship between new frequency.
As shown in figure 8, in one embodiment, creation module 130 includes chosen module 131, statistical module 133, analysis
Module 135 and relationship establish module 137.Wherein:
Chosen module 131 is used for selected temperature.Specifically, a certain temperature value is selected, such as -10 DEG C.
The bit error rate of the statistical module 133 for the multiple test memory under different refreshing frequencys, it is bent to form data distribution
Line.Specifically, adjust the refreshing frequency of memory after selected temperature, then under the refreshing frequency multiple test memory error code
Rate forms data distribution curve.
Analysis module 135 is used to determine corresponding refresh according to the data distribution curve of statistics and the lowest bit error rate of permission
Frequency.Specifically, the lowest bit error rate allowed can be set according to the bit error rate allowed under normal working temperature, such as permission
Lowest bit error rate can be 1/several00000000.If there are multiple refreshing frequencys for meeting lowest bit error rate, it is the smallest to choose the bit error rate
Refreshing frequency is as the corresponding refreshing frequency of the temperature.
Relationship establishes module 137 for establishing the corresponding relationship between temperature and the refreshing frequency of corresponding memory.Specifically
, after the refreshing frequency for calculating the corresponding memory of a certain temperature, the corresponding relationship between temperature and the refreshing frequency is established, weight
Multiple operation, establishes the corresponding relationship between all temperature and refreshing frequency.
Further, the temperature value of environment where temperature detecting module 110 is also used to be spaced monitoring memory at preset timed intervals.
Specifically, the temperature value of environment where periodic monitoring memory, can accurately adjust the refreshing frequency of memory, guarantee the data of memory
It is read out, it is not easy to make mistakes.Preset interval time can be set as needed, such as 30 minutes.
In addition, when system is run, memory configurations information is only transferred to Installed System Memory and executed by software, right when computer is opened
The change of the refreshing frequency of memory will not change the parameter information of memory itself.The parameter information includes being stored in SPD(Serial
Presence Detect, serial sensing) working frequency, the physical memory banks of BANK(memory) quantity, Module
Organization(mould group), the Cycle Time(period) etc. configuration informations.
Above-mentioned EMS memory management process and system, when monitoring temperature value is less than minimum operating temperature or is higher than maximum operating temperature
When, the refreshing frequency for adjusting memory is refreshing frequency corresponding with the temperature value, and data in memory may make not drop to door
Before below voltage limit, the data of memory are read, read error is avoided the occurrence of, lower than minimum operating temperature or is higher than in environment temperature
It when maximum operating temperature, is not required to design additional heater circuit in low temperature and internally deposits into capable heating, or at high temperature to memory
Cool down, is also not required to choose expensive memory adaptation low temperature and hot environment, reduce costs, and widened the work of memory
Temperature range.
In addition, by pre-establishing the relationship between temperature and the refreshing frequency of memory, can find easily and fast with
The corresponding refreshing frequency of temperature is adjusted, and improves treatment effeciency；Relationship between temperature and the refreshing frequency of memory passes through
Mass data is counted, and analyzes and obtains, improves accuracy.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (8)
1. a kind of EMS memory management process, comprising the following steps:
Selected temperature；
The bit error rate of multiple test memory under different refreshing frequencys forms data distribution curve；
Corresponding refreshing frequency is determined according to the lowest bit error rate of the data distribution curve of statistics and permission；
Establish the corresponding relationship between temperature and the refreshing frequency of corresponding memory；
The temperature value of memory place environment is monitored by temperature sensor or the monitoring temperature chip for being internally integrated PN junction；
Judge whether the temperature value is less than preset minimum operating temperature or is greater than preset maximum operating temperature, if so,
The refreshing frequency of the memory is adjusted to refreshing frequency corresponding with the temperature value；
Unlatching computer, which is internally deposited, is read out data.
2. EMS memory management process according to claim 1, which is characterized in that the refreshing frequency by the memory is adjusted
Include: for the step of refreshing frequency corresponding with the temperature value
Corresponding refreshing is found in the corresponding relationship between preset temperature and RAM refresh frequency according to the temperature value
Frequency；
The refreshing frequency of the memory is adjusted to the corresponding refreshing frequency found.
3. EMS memory management process according to claim 2, which is characterized in that in the temperature of environment where the monitoring memory
Before the step of value, further comprise the steps of:
Corresponding relationship between the temperature and RAM refresh frequency is stored in corresponding table；
Corresponding refreshing is found in the corresponding relationship between preset temperature and RAM refresh frequency according to the temperature value
The step of frequency specifically:
According to corresponding relationship of the temperature value from the corresponding table between the preset temperature stored and RAM refresh frequency
In find corresponding refreshing frequency.
4. EMS memory management process according to claim 1, which is characterized in that in the refreshing frequency tune by the memory
After the step of section is refreshing frequency corresponding with the temperature value, further comprise the steps of:
The temperature value of environment where interval monitoring memory at preset timed intervals.
5. a kind of internal storage management system characterized by comprising
Chosen module is used for selected temperature；
Statistical module forms data distribution curve for the bit error rate of test memory multiple under different refreshing frequencys；
Analysis module, for determining corresponding refreshing frequency according to the data distribution curve of statistics and the lowest bit error rate of permission；
Relationship establishes module, the corresponding relationship for establishing between temperature and the refreshing frequency of corresponding memory；
Temperature monitoring module, for passing through temperature sensor or being internally integrated ring where the monitoring temperature chip of PN junction monitors memory
The temperature value in border；
Memory control module for judging whether the temperature value is less than preset minimum operating temperature, or is greater than preset
Maximum operating temperature, if so, the refreshing frequency of the memory is adjusted to refreshing frequency corresponding with the temperature value；It opens
Computer is internally deposited and is read out data.
6. internal storage management system according to claim 5, which is characterized in that the Memory control module is also used to according to institute
It states temperature value and finds corresponding refreshing frequency in the corresponding relationship between preset temperature and RAM refresh frequency, and will
The refreshing frequency of the memory is adjusted to the corresponding refreshing frequency found.
7. internal storage management system according to claim 6, which is characterized in that further include:
Creation module, for the corresponding relationship between the temperature and RAM refresh frequency to be stored in corresponding table；
The preset temperature and memory that the Memory control module is also used to be stored from the corresponding table according to the temperature value
Corresponding refreshing frequency is found in corresponding relationship between refreshing frequency.
8. internal storage management system according to claim 5, which is characterized in that the temperature monitoring module is also used to by default
The temperature value of environment where time interval monitoring memory.
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| CN106205660B (en) * | 2016-07-18 | 2019-05-28 | 北京兆易创新科技股份有限公司 | The adjusting method and nonvolatile memory of nonvolatile memory clock frequency |
| CN109240880A (en) * | 2018-08-27 | 2019-01-18 | 北京比特大陆科技有限公司 | A kind of digital cash digs control method, device and the relevant device of mine machine |
| TWI670716B (en) * | 2018-09-26 | 2019-09-01 | 群聯電子股份有限公司 | Data access method,memory storage device and memory control circuit unit |
| CN111324196B (en) * | 2020-02-03 | 2021-09-28 | Oppo广东移动通信有限公司 | Memory operation frequency adjusting method and device, storage medium and electronic equipment |
| CN114121072B (en) | 2020-08-27 | 2023-12-12 | 长鑫存储技术有限公司 | Memory adjusting method, adjusting system and semiconductor device |
| CN114121073B (en) | 2020-08-27 | 2023-09-12 | 长鑫存储技术有限公司 | Memory adjusting method, adjusting system and semiconductor device |
| CN114121096B (en) | 2020-08-27 | 2024-03-26 | 长鑫存储技术有限公司 | Memory adjusting method, adjusting system and semiconductor device |
| CN114121058B (en) | 2020-08-27 | 2023-08-29 | 长鑫存储技术有限公司 | Memory adjusting method, adjusting system and semiconductor device |
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| US7558810B2 (en) * | 2004-05-21 | 2009-07-07 | Computer Associates Think, Inc. | System and method for managing a path environment variable |
| US20100153957A1 (en) * | 2008-12-16 | 2010-06-17 | Sensormatic Electronics Corporation | System and method for managing thread use in a thread pool |
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| CN1501463A (en) * | 2002-11-12 | 2004-06-02 | 联想(北京)有限公司 | Chip frequency regulation method |
| CN101587745A (en) * | 2009-06-23 | 2009-11-25 | 成都市华为赛门铁克科技有限公司 | Data read-write method and non-volatile storage medium |
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