CN103675640A - Semiconductor P and N type non-contact test sensor - Google Patents
Semiconductor P and N type non-contact test sensor Download PDFInfo
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- CN103675640A CN103675640A CN201310698619.XA CN201310698619A CN103675640A CN 103675640 A CN103675640 A CN 103675640A CN 201310698619 A CN201310698619 A CN 201310698619A CN 103675640 A CN103675640 A CN 103675640A
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Abstract
The invention relates to a semiconductor P and N type non-contact test sensor. The semiconductor P and N type non-contact test sensor comprises a shell, a charge induction electrode, an infrared excitation diode and an insulating locating piece, wherein the charge induction electrode is arranged inside the shell and used for inducting weak photogenerated charges generated on the surface of a semiconductor, the infrared excitation diode is used for emitting light and irradiating light to the surface of the semiconductor, and the charge induction electrode is arranged on the insulating locating piece. Insulating packing is sealed in the shell. The infrared excitation diode is utilized to excite the surface of the semiconductor to induce and generate the weak photogenerated charges, the charge induction electrode collects the photogenerated charges and generates corresponding voltage signals, and the P type and the N type of the semiconductor are discriminated. By the adoption of the infrared excitation diode, high accuracy can be still achieved with the induction distance being not larger than 0.15mm without directly making contact with the semiconductor.
Description
Technical field
The present invention relates to semiconductor test field, relate in particular to a kind of semiconductor P, N type non-contact testing sensor.
Background technology
Because semiconductor has the physical influence of doping property controllable conductivity characteristic, make it have the features such as thermal sensitivity, photosensitivity, magnetosensitive and electronics amplification, sudden change ability, therefore at non-electricity measure information electronic technology, electron optics imaging technique, communication, solid information memory etc., there is very high practical value.
The semiconductor material of different electricity types has different charge carrier characteristics, also has different demands in application.The P of existing detection semiconductor material, N type are used contact cold-hot probe method mostly, very easily damage semiconductor material so that cause recessive defect.
Therefore, need the sensor of a kind of non-contacting measuring semiconductor P, N type badly.
Summary of the invention
The object of the invention is to overcome the defect that prior art exists, a kind of semiconductor P, N type non-contact testing sensor are provided.
The technical scheme that realizes the object of the invention is: a kind of semiconductor P, N type non-contact testing sensor, the following mechanism that comprises housing and be arranged at described enclosure interior: electric charge induction electrode, on described electric charge induction electrode, offer light hole and be provided with a contact conductor, extend outside described housing described contact conductor one end, for gathering following photogenerated charge and generating corresponding voltage signal;
Infrared excitation diode, described infrared excitation diode is arranged in described light hole and is provided with two infrared excitation diode leads, described infrared excitation diode lead welding end extends outside described housing, for vitalizing semiconductor, produces faint photogenerated charge;
Insulation keeper, described electric charge induction electrode is arranged on described insulation keeper;
In described housing, be also sealed with insulating packing.
Further, described housing is hollow circular cylinder.
Further, described housing is stainless steel hollow circular cylinder.
Further, described electric charge induction electrode is circular.
Further, the light hole diameter of described electric charge induction electrode is 4～6mm.
Further, described insulation keeper is teflon right cylinder.
Further, described insulating packing is epoxy resin or silica gel.
Further, also comprise the ground lead being connected with described housing.
The present invention has positive effect: the present invention utilizes infrared excitation diode vitalizing semiconductor surface to bring out and produces faint photogenerated charge, electric charge induction electrode collects photogenerated charge and generates corresponding voltage signal, according to N-type semiconductor, it is electron type charge carrier, luring of photoreceiving surface swashs the lower Surface Intrinsic state that produces opposite potential, therefore electric charge induction electrode generates a pulsation positive voltage signal, and P-type semiconductor is cavity type charge carrier, luring of photoreceiving surface swashs the lower Surface Intrinsic state that produces opposite potential, therefore electric charge induction electrode generates a pulsation negative voltage signal, thereby go out respectively semi-conductive P, N type, adopt infrared excitation diode to be no more than 0.15mm at distance of reaction and also can reach higher accuracy, do not need directly to contact with semiconductor.
Accompanying drawing explanation
For content of the present invention is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation, wherein: Fig. 1 is structural representation of the present invention below.
Wherein: 1, housing, 2, insulation keeper, 3, electric charge induction electrode, 4, infrared excitation diode, 5, insulating packing, 6, contact conductor, 7, infrared excitation diode lead, 8, ground lead.
Embodiment
As shown in Figure 1, first preferred embodiment of the invention provides a kind of semiconductor P, N type non-contact testing sensor, the following mechanism that comprises housing 1 and be arranged at housing 1 inside: electric charge induction electrode 3, on electric charge induction electrode 3, offer light hole (not shown) and be provided with a contact conductor 6, extend outside housing 1 contact conductor 6 one end, for gathering photogenerated charge and generating corresponding voltage signal;
Infrared excitation diode 4, infrared excitation diode 4 is arranged in light hole and is provided with two infrared excitation diode leads 7, and infrared excitation diode lead 7 welding ends extend outside housing 1, for vitalizing semiconductor, produce faint photogenerated charge;
In housing 1, be also sealed with insulating packing 5.
The present embodiment utilizes infrared excitation diode 4 pulsation vitalizing semiconductor surfaces to bring out and produces faint photogenerated charge, electric charge induction electrode 3 collects photogenerated charge and generates corresponding voltage signal, according to N-type semiconductor, it is electron type charge carrier, luring of photoreceiving surface swashs the lower Surface Intrinsic state that produces opposite potential, therefore electric charge induction electrode 3 generates a pulsation positive voltage signal, and P-type semiconductor is cavity type charge carrier, luring of photoreceiving surface swashs the lower Surface Intrinsic state that produces opposite potential, therefore electric charge induction electrode 3 generates a pulsation negative voltage signal, thereby go out respectively semi-conductive P, N type, adopt infrared excitation diode 4 to be no more than 0.15mm at distance of reaction and also can reach higher accuracy, do not need directly to contact with semiconductor.
As the second preferred embodiment, all the other are identical with embodiment 1, difference is, the housing 1 that the present embodiment provides is stainless steel hollow circular cylinder, the rigidity of structure is good, electric charge induction electrode 3 is circular, the light hole diameter of electric charge induction electrode 3 is 4～6mm, the preferred 5mm of the present embodiment, insulation keeper 2 is teflon right cylinder, temperature coefficient is little, adapt to various temperature environments, insulating packing 5 is epoxy resin or silica gel, is specifically not construed as limiting, and the present embodiment also comprises the ground lead 8 being connected with housing 1.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (8)
1. a semiconductor P, N type non-contact testing sensor, it is characterized in that, the following mechanism that comprises housing and be arranged at described enclosure interior: electric charge induction electrode, on described electric charge induction electrode, offer light hole and be provided with a contact conductor, extend outside described housing described contact conductor one end, for gathering following photogenerated charge and generating corresponding voltage signal;
Infrared excitation diode, described infrared excitation diode is arranged in described light hole and is provided with two infrared excitation diode leads, described infrared excitation diode lead welding end extends outside described housing, for electrified light emitting vitalizing semiconductor, produces faint photogenerated charge;
Insulation keeper, described electric charge induction electrode is arranged on described insulation keeper;
In described housing, be also sealed with insulating packing.
2. semiconductor P according to claim 1, N type non-contact testing sensor, is characterized in that, described housing is hollow circular cylinder.
3. semiconductor P according to claim 2, N type non-contact testing sensor, is characterized in that, described housing is stainless steel hollow circular cylinder.
4. semiconductor P according to claim 1, N type non-contact testing sensor, is characterized in that, described electric charge induction electrode is circular.
5. semiconductor P according to claim 4, N type non-contact testing sensor, is characterized in that, the light hole diameter of described electric charge induction electrode is 4～6mm.
6. semiconductor P according to claim 1, N type non-contact testing sensor, is characterized in that, described insulation keeper is teflon right cylinder.
7. semiconductor P according to claim 1, N type non-contact testing sensor, is characterized in that, described insulating packing is epoxy resin or silica gel.
8. semiconductor P according to claim 1, N type non-contact testing sensor, is characterized in that, also comprises the ground lead being connected with described housing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310698619.XA CN103675640A (en) | 2013-12-19 | 2013-12-19 | Semiconductor P and N type non-contact test sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310698619.XA CN103675640A (en) | 2013-12-19 | 2013-12-19 | Semiconductor P and N type non-contact test sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103675640A true CN103675640A (en) | 2014-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310698619.XA Pending CN103675640A (en) | 2013-12-19 | 2013-12-19 | Semiconductor P and N type non-contact test sensor |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4412202A1 (en) * | 1994-04-08 | 1994-09-01 | Ludwig Dr Koester | Method for the contactless determination of the electrical conduction type of semiconductor materials and measuring instrument for carrying out the method |
| CN101154653A (en) * | 2006-09-28 | 2008-04-02 | 三菱电机株式会社 | Leistungshalbleitermodul |
| CN101614685A (en) * | 2009-03-13 | 2009-12-30 | 北京大学 | Detect the method and the detection system of semiconductor crystal or epitaxial thin film material polarity |
| CN203688742U (en) * | 2013-12-19 | 2014-07-02 | 江苏瑞新科技股份有限公司 | Semiconductor P and N type non-contact test sensor |
-
2013
- 2013-12-19 CN CN201310698619.XA patent/CN103675640A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4412202A1 (en) * | 1994-04-08 | 1994-09-01 | Ludwig Dr Koester | Method for the contactless determination of the electrical conduction type of semiconductor materials and measuring instrument for carrying out the method |
| CN101154653A (en) * | 2006-09-28 | 2008-04-02 | 三菱电机株式会社 | Leistungshalbleitermodul |
| CN101614685A (en) * | 2009-03-13 | 2009-12-30 | 北京大学 | Detect the method and the detection system of semiconductor crystal or epitaxial thin film material polarity |
| CN203688742U (en) * | 2013-12-19 | 2014-07-02 | 江苏瑞新科技股份有限公司 | Semiconductor P and N type non-contact test sensor |
Non-Patent Citations (1)
| Title |
|---|
| 颜友钧等: "基于虚拟仪器的动态非接触式硅片测试仪", 《传感器与微系统》 * |
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Application publication date: 20140326 |