CN103668210A - Selective crystal silicon etchant, etching method of wafer silicon chip and application of selective crystal silicon etchant - Google Patents
Selective crystal silicon etchant, etching method of wafer silicon chip and application of selective crystal silicon etchant Download PDFInfo
- Publication number
- CN103668210A CN103668210A CN201210335557.1A CN201210335557A CN103668210A CN 103668210 A CN103668210 A CN 103668210A CN 201210335557 A CN201210335557 A CN 201210335557A CN 103668210 A CN103668210 A CN 103668210A
- Authority
- CN
- China
- Prior art keywords
- wafer
- silicon
- selectivity
- etching liquid
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Weting (AREA)
Abstract
The invention discloses a selective crystal silicon etchant. The etchant comprises the following components by volume percent: more than 0 and less than or equal to 80 percent of nitric acid, more than 0 and less than or equal to 20 percent of hydrofluoric acid and more than 0 and less than or equal to 50 percent of acetic acid. The invention also provides an etching method of a wafer silicon chip. The method comprises the following steps: providing the selective crystal silicon etchant; placing a plurality of wafer silicon chips into the selective crystal silicon etchant; heating the selective crystal etchant containing a plurality of wafer silicon chips to 25-50 DEG C in a closed environment, and performing heat preservation for 10-1800 seconds so as to etch the surface of the wafer silicon chips. The etching method of the wafer silicon chips can be used for the silicon etching of the back surface of a wafer. By adopting the etching method of the wafer silicon chips by utilizing the selective crystal silicon etchant, the problem that the wafer silicon etching uniformity and coarseness on the back surface of the existing wafer are poor can be solved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to lithographic method and the application thereof of a kind of selectivity crystalline silicon etching liquid, wafer silicon chip.
Background technology
Generally, image sensor is illumination (Front Side Illumination above, be called for short FSI), other optical elements such as sensitive layer, metal level, dielectric layer and lens are arranged on silicon substrate, and light sees through lens, metal level, dielectric layer arrival sensitive layer.Due to the obstruction of metal level and dielectric layer and the refraction of light, reflection etc., the light total amount that arrives sensitive layer is greatly reduced, such result is the sensitivity that has reduced image sensor.In order to obtain higher sensitivity, backside illumination (Back Side Illumination is called for short BSI) pixel technique is developed application.The lens of BSI image sensor, sensitive layer lay respectively on relative two surfaces of silicon substrate with metal level, medium layer, and light directly arrives sensitive layer through lens, and less light is depleted, thereby makes image photoreceptor have higher sensitivity.
The etching of the crystalline silicon that in BSI technology, a very important step is wafer rear, as shown in Figure 1, in Fig. 1, P type heavy doping silicon layer 101 is positioned at the below of P type light dope silicon layer 102, and graph layer 103 is positioned at the below of P type heavy doping silicon layer 101.When wet etching, from wafer rear, carry out etching, P type heavy doping silicon layer 101 is the layer that is etched, P type light dope silicon layer 102 is etching stop layer.So the homogeneity of the etching of the crystalline silicon of wafer rear and roughness can affect BSI image photoreceptor and have higher performance.But in the prior art, the general mixing solutions of nitric acid and hydrofluoric acid of only using is as the etching liquid of wet etching, crystalline silicon is carried out to etching, but utilize this etching liquid to carry out after wet etching, the roughness on the homogeneity of the residual thickness of P type light dope silicon layer 102 and P type light dope silicon layer 102 surfaces is all poor, cannot meet the requirement of BSI image photoreceptor.
So, how a kind of lithographic method of wafer silicon chip is provided, can improve wafer rear crystalline silicon etching homogeneity and reduce roughness, become the problem that those skilled in the art need to solve.
Summary of the invention
The object of the invention is to, solve homogeneity and the poor problem of roughness of etching of the crystalline silicon of existing wafer rear.
For solving the problems of the technologies described above, the invention provides a kind of selectivity crystalline silicon etching liquid, comprising:
Volume percent is greater than 0vol% and is less than or equal to the nitric acid of 80vol%;
Volume percent is greater than 0vol% and is less than or equal to 20vol% hydrofluoric acid; And
Volume percent is greater than 0vol% and is less than or equal to 50vol% acetic acid.
Further, described selectivity crystalline silicon etching liquid also comprises: volume percent is greater than 0vol% and is less than or equal to the tensio-active agent of 20vol%.
Further, the volumetric molar concentration of described tensio-active agent is 20%～80%.
Further, described tensio-active agent is:
General formula is R
1the carboxylic acid of-COOM or its metal-salt, wherein, R
1be an alkyl, M is a hydrogen ion or a metallic cation;
General formula is NH
2-R
2the hydramine of-OH, wherein, R
2it is an alkylidene group;
General formula is R
3-[R
4-O]
n-R
5ether, wherein, R
3and R
5identical or different and respectively do for oneself a hydrogen ion or an alkyl, R
4be an alkylidene group, n is more than or equal to 1 natural number; Or
The mixture of two or more above-mentioned tensio-active agents.
Further, the volumetric molar concentration of described acetic acid is 20%～90%.
Further, the volumetric molar concentration of described nitric acid is 10%～60%.
Further, the volumetric molar concentration of described hydrofluoric acid is 20%～60%.
Further, provide a kind of lithographic method of wafer silicon chip, comprising:
Provide as the selectivity crystalline silicon etching liquid as described in any one in claim 1-7;
Some wafer silicon chips are placed in to described selectivity crystalline silicon etching liquid;
Under closed environment, the selectivity crystalline silicon etching liquid that comprises some wafer silicon chips is heated to 25 ℃～50 ℃, and keep 10sec～1800sec at this temperature, make the surface of described some wafer silicon chips obtain etching.
Further, a kind of application of lithographic method of wafer silicon chip is provided, and the lithographic method of described wafer silicon chip is for the silicon etching of wafer rear, and the lowest layer of described wafer silicon chip is graph layer, on described graph layer, being P type heavy doping silicon layer, is P type light dope silicon layer on described P type heavy doping silicon layer.
Further, described P type heavy doping silicon layer is greater than 10 to the etching selection ratio of P type light dope silicon layer.
Compared with prior art, lithographic method and the application thereof of selectivity crystalline silicon etching liquid provided by the invention, wafer silicon chip have the following advantages:
1, selectivity crystalline silicon etching liquid of the present invention, comprise that volume percent is greater than 0vol% and is less than or equal to 50vol% acetic acid, compared with prior art, the specific inductivity that adds membership reduction etching liquid of acetic acid, thereby reduce the liberation degree of nitric acid and hydrofluoric acid, etch rate is reduced, increased the time of etching reaction, the etching selection ratio that has improved P type heavy doping silicon layer and P type light dope silicon layer, is improved the homogeneity of etching; In addition, acetic acid can reduce the surface tension of etching liquid, avoids etching reaction too fierce, etching reaction is become gently, thereby reduce the roughness on etching stop layer surface.
2, selectivity crystalline silicon etching liquid of the present invention also comprises that volume percent is greater than 0vol% and is less than or equal to the tensio-active agent of 50vol%, tensio-active agent add the surface tension that can further reduce etching liquid, improve the homogeneity of etching, reduce the roughness on etching stop layer surface.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the etching of the crystalline silicon of wafer rear in prior art;
Fig. 2 is the schema of lithographic method of the wafer silicon chip of one embodiment of the invention.
Embodiment
Below in conjunction with schematic diagram, lithographic method and the application thereof of selectivity crystalline silicon etching liquid of the present invention, wafer silicon chip are described in more detail, the preferred embodiments of the present invention have wherein been represented, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details to realize developer's specific objective, for example, according to the restriction of relevant system or relevant business, by an embodiment, change into another embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, with reference to accompanying drawing, with way of example, the present invention is more specifically described.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, a kind of selectivity crystalline silicon etching liquid is provided, by adding volume percent to be greater than 0vol% in the mixed solution at nitric acid and hydrofluoric acid and being less than or equal to 50vol% acetic acid, reduce the specific inductivity of etching liquid, reduce the liberation degree of nitric acid and hydrofluoric acid, improve the etching selection ratio of P type heavy doping silicon layer to P type light dope silicon layer, and reduced the surface tension of etching liquid.
In conjunction with above-mentioned core concept, the invention provides a kind of selectivity crystalline silicon etching liquid, comprising: volume percent is greater than 0vol% and is less than or equal to the nitric acid of 80vol%, preferably, the volume percent of nitric acid is 20vol%, 40vol%, 60vol%; Volume percent is greater than 0vol% and is less than or equal to 20vol% hydrofluoric acid, and preferably, the volume percent of hydrofluoric acid is 5vol%, 10vol%, 15vol%; And volume percent is greater than 0vol% and is less than or equal to 50vol% acetic acid, preferably, the volume percent of acetic acid is 15vol%, 30vol%, 45vol%.
Wherein, the volumetric molar concentration of described acetic acid is preferably 20%～90%, and as 30%, 50%, 70%, but the volumetric molar concentration of acetic acid is not limited to 20%～90%, and the volumetric molar concentration of acetic acid is that 10% grade is also within thought range of the present invention; The volumetric molar concentration of described nitric acid is preferably 10%～60%, and as 20%, 40%, 50%, but the volumetric molar concentration of nitric acid is not limited to 10%～60%, and the volumetric molar concentration of nitric acid is that 80% grade is also within thought range of the present invention; The volumetric molar concentration of described hydrofluoric acid is preferably 20%～60%, and as 30%, 45%, 50%, but the volumetric molar concentration of hydrofluoric acid is not limited to 20%～60%, and the volumetric molar concentration of hydrofluoric acid is 10% or 80% etc. also within thought range of the present invention.
The volume ratio of nitric acid, hydrofluoric acid and acetic acid, and nitric acid, hydrofluoric acid and acetic acid volumetric molar concentration separately all can be in above-mentioned scope arbitrary combination.The specific inductivity that adds membership reduction etching liquid of acetic acid, thus the liberation degree of reduction nitric acid and hydrofluoric acid reduces etch rate, has increased the time of etching reaction, and the homogeneity of etching is improved; In addition, acetic acid can reduce the surface tension of etching liquid, avoids etching reaction too fierce, etching reaction is become gently, thereby reduce the roughness on etching stop layer surface.
Preferably, selectivity crystalline silicon etching liquid can also comprise that volume percent is greater than 0vol% and is less than or equal to the tensio-active agent of 20vol%, and preferably, the volume ratio of tensio-active agent is 5vol%, 10vol%, 15vol%.Tensio-active agent add the surface tension that can further reduce etching liquid, improve the homogeneity of etching, reduce the roughness on etching stop layer surface.The volumetric molar concentration of described tensio-active agent is preferably 20%～80%, as 30%, 40%, 50%, 70%, but the volumetric molar concentration of tensio-active agent is not limited to 20%～80%, if the volumetric molar concentration of tensio-active agent is 10% or 90% etc. also within thought range of the present invention.
The volumetric molar concentration of described tensio-active agent is selected from: general formula is R
1the carboxylic acid of-COOM or its metal-salt, wherein, R
1be an alkyl, M is a hydrogen ion or a metallic cation; General formula is NH
2-R
2the hydramine of-OH, wherein, R
2it is an alkylidene group; General formula is R
3-[R
4-O] n-R
5ether, wherein, R
3and R
5identical or different and respectively do for oneself a hydrogen ion or an alkyl, R
4be an alkylidene group, n is more than or equal to 1 natural number; Mixture with two or more above-mentioned tensio-active agents.
In above-mentioned general formula, " alkyl " refers to branched-chain alkyl or has the straight chained alkyl of 1～20 carbon atom, better 3～15 carbon atoms, better 5～12 carbon atoms, and any one in described alkyl, a plurality of or whole hydrogen atom are optionally selected from following substituting group and replace by one or more separately: C
1-10alkoxyl group, C
1-6carboxyl, Si
1-6silylation, C
2-10amide group and aryl.Wherein aryl refers to have the aryl of 5～22 carbon atoms, such as phenyl or naphthyl etc.; In above-mentioned general formula, " alkyl " also comprise wherein any, the alkyl that replaced by halogen ion of a plurality of or whole hydrogen ion, its indefiniteness example has, CF
3-, CHF
2-, C
2f
5-, CF
3cHF-, C
4f
9-etc.In this article, " metallic cation " refers to alkali metal cation, comprises the metallic cation of unit price for example or multivalence, as lithium ion, sodium ion, magnesium ion, calcium ion, iron ion and aluminum ion etc.
The indefiniteness example of described carboxylic acid or its metal-salt tensio-active agent has: CF
3(CH
2cF
2)
6cOOH, C
17h
35cOONa, CF
3(CH
2)
4cOONa, C
15h
13cOOK, (C
2h
5)
3siCH
2cOONa etc.The indefiniteness example of described hydramine tensio-active agent has: N (CH
2cH
2oH)
3, C
4h
11nO
2deng.The indefiniteness example of described ether surface active agent has: CF
3c
2h
4(C
2h
4o)
2h, CF
3c
2h
4(C
2h
4o)
4h, C
2f
5c
2h
4(C
2h
4o)
2h, C
2f
5c
2h
4(C
2h
4o)
4h, C
8h
17c
2h
4(C
2h
4o)
6h etc.
The tensio-active agent of selectivity crystalline silicon etching liquid of the present invention can make one or more tensio-active agents, as CF
3(CH
2cF
2)
6cOOH and CF
3c
2h
4(C
2h
4o)
2the mixing of H tensio-active agent.But tensio-active agent of the present invention is not limited to the above-mentioned tensio-active agent of enumerating, because selectivity crystalline silicon etching liquid of the present invention is acid etching liquid, so so long as the tensio-active agent that can use under sour environment, also within thought range of the present invention.
Selectivity crystalline silicon etching liquid of the present invention can, with any ordinary method preparation known in the art, be not particularly limited.
Another aspect of the present invention relates to and a kind ofly adopts above-mentioned selectivity crystalline silicon etching liquid as the lithographic method of the wafer silicon chip of wet etching liquid, and with reference to figure 2, the schema of the lithographic method of the wafer silicon chip that Fig. 2 is one embodiment of the invention, comprises the following steps:
Carry out step S11, above-mentioned selectivity crystalline silicon etching liquid is provided;
Carry out step S12, some wafer silicon chips are placed in to described selectivity crystalline silicon etching liquid;
Carry out step S13, under closed environment, the selectivity crystalline silicon etching liquid that comprises some wafer silicon chips is heated to 25 ℃～50 ℃, and keep 10sec～1800sec at this temperature, make the surface of described some wafer silicon chips obtain etching.Wherein, preferably temperature is 25 ℃, 30 ℃, 40 ℃, 50 ℃, preferably the hold-time is 50sec, 100sec, 150sec, 180sec, 200sec, 300sec, 500sec, 800sec, 1200sec, react completely guaranteeing, but the concrete time is determined by the thickness of the layer that is etched.
The lithographic method of wafer silicon chip of the present invention can be for the silicon etching of wafer rear, and wherein, P type heavy doping silicon layer is the layer that is etched, and P type light dope silicon layer is etching stop layer.Adopt above-mentioned selectivity crystalline silicon etching liquid as the lithographic method of the wafer silicon chip of wet etching liquid during to the silicon etching of wafer rear, P type heavy doping silicon layer is greater than 10 to the etching selection ratio of P type light dope silicon layer, even up to more than 30.But the lithographic method of wafer silicon chip of the present invention is not limited to the silicon etching for wafer rear, also can be used for the silicon etching of wafer frontside, only need to regulate the volume ratio of each component in etching liquid.
Below in conjunction with specific embodiment, carry out specific description the present invention, it will be clear that content of the present invention is not restricted to following examples, other improvement by those of ordinary skills' routine techniques means are also within thought range of the present invention.
[the first embodiment]
In the present embodiment, the nitric acid of 40vol%, 20vol% hydrofluoric acid and 40vol% acetic acid are mixed and makes selectivity crystalline silicon etching liquid.Wherein, the volumetric molar concentration of nitric acid is 60%, and the volumetric molar concentration of hydrofluoric acid is 30%, and the volumetric molar concentration of acetic acid is 30%.
Some wafer silicon chips are placed in to the selectivity crystalline silicon etching liquid preparing in the ratio of the present embodiment, wherein, wafer silicon chip is for BSI technology, the wafer rear lowest layer is graph layer 103, on graph layer 103, being P type heavy doping silicon layer 101, is P type light dope silicon layer 102 on P type heavy doping silicon layer 101.When wet etching, wafer rear is carried out to etching, P type heavy doping silicon layer 101 is the layer that is etched, P type light dope silicon layer 102 is etching stop layer.
Under closed environment, the selectivity crystalline silicon etching liquid that comprises some wafer silicon chips is heated to 25 ℃, and keep 90sec at this temperature, make the surface of described some wafer silicon chips obtain abundant etching.
Experiment records, and in the present embodiment, through etching, the surfaceness of the P type light dope silicon layer 102 exposing is poor, and after etching, the homogeneity (Uniformity) of the thickness of remaining P type light dope silicon layer 102 is 0.85%; P type heavy doping silicon layer is 11.3 to the etching selection ratio of P type light dope silicon layer.
[the second embodiment]
In the present embodiment, the nitric acid of 50vol%, 15vol% hydrofluoric acid, 30vol% acetic acid and 5vol% tensio-active agent are mixed and make selectivity crystalline silicon etching liquid.Wherein, the volumetric molar concentration of nitric acid is 40%, and the volumetric molar concentration of hydrofluoric acid is 40%, and the volumetric molar concentration of acetic acid is 20%, and the volumetric molar concentration of tensio-active agent is 20%, and tensio-active agent is C
15h
13cOOK.
Some wafer silicon chips are placed in to the selectivity crystalline silicon etching liquid preparing in the ratio of the present embodiment, wherein, wafer silicon chip is for BSI technology, the wafer rear lowest layer is graph layer 103, on graph layer 103, being P type heavy doping silicon layer 101, is P type light dope silicon layer 102 on P type heavy doping silicon layer 101.When wet etching, wafer rear is carried out to etching, P type heavy doping silicon layer 101 is the layer that is etched, P type light dope silicon layer 102 is etching stop layer.
Under closed environment, the selectivity crystalline silicon etching liquid that comprises some wafer silicon chips is heated to 30 ℃, and keep 150sec at this temperature, make the surface of described some wafer silicon chips obtain abundant etching.
Experiment records, in the present embodiment, and through etching, the surfacing of the P type light dope silicon layer 102 exposing, after etching, the homogeneity (Uniformity) of the thickness of remaining P type light dope silicon layer 102 is 0.91%; Selecting P type heavy doping silicon layer is 18.6 to the etching selection ratio of P type light dope silicon layer.
[the 3rd embodiment]
In the present embodiment, the nitric acid of 10vol%, 20vol% hydrofluoric acid, 50vol% acetic acid and 20vol% tensio-active agent are mixed and make selectivity crystalline silicon etching liquid.Wherein, the volumetric molar concentration of nitric acid is 40%, and the volumetric molar concentration of hydrofluoric acid is 20%, and the volumetric molar concentration of acetic acid is 50%, and the volumetric molar concentration of tensio-active agent is 70%, and tensio-active agent is CF
3(CH
2)
4cOONa and CF
3c
2h
4(C
2h
4o)
2h.
Some wafer silicon chips are placed in to the selectivity crystalline silicon etching liquid preparing in the ratio of the present embodiment, wherein, wafer silicon chip is for BSI technology, the wafer rear lowest layer is graph layer 103, on graph layer 103, being P type heavy doping silicon layer 101, is P type light dope silicon layer 102 on P type heavy doping silicon layer 101.When wet etching, wafer rear is carried out to etching, P type heavy doping silicon layer 101 is the layer that is etched, P type light dope silicon layer 102 is etching stop layer.
Under closed environment, the selectivity crystalline silicon etching liquid that comprises some wafer silicon chips is heated to 40 ℃, and keep 200sec at this temperature, make the surface of described some wafer silicon chips obtain abundant etching.
Experiment records, and in the present embodiment, through etching, the surface of the P type light dope silicon layer 102 exposing is more smooth, and after etching, the homogeneity (Uniformity) of the thickness of remaining P type light dope silicon layer 102 is 0.94%; P type heavy doping silicon layer is 32.28 to the etching selection ratio of P type light dope silicon layer.
[the 4th embodiment]
In the present embodiment, the nitric acid of 80vol%, 5vol% hydrofluoric acid, 10vol% acetic acid and 5vol% tensio-active agent are mixed and make selectivity crystalline silicon etching liquid.Wherein, the volumetric molar concentration of nitric acid is 10%, and the volumetric molar concentration of hydrofluoric acid is 60%, and the volumetric molar concentration of acetic acid is 90%, and the volumetric molar concentration of tensio-active agent is 80%, and tensio-active agent is CF
3(CH
2)
4cOONa and CF
3c
2h
4(C
2h
4o)
2h.
Some wafer silicon chips are placed in to the selectivity crystalline silicon etching liquid preparing in the ratio of the present embodiment, wherein, wafer silicon chip is for BSI technology, the wafer rear lowest layer is graph layer 103, on graph layer 103, being P type heavy doping silicon layer 101, is P type light dope silicon layer 102 on P type heavy doping silicon layer 101.When wet etching, wafer rear is carried out to etching, P type heavy doping silicon layer 101 is the layer that is etched, P type light dope silicon layer 102 is etching stop layer.
Under closed environment, the selectivity crystalline silicon etching liquid that comprises some wafer silicon chips is heated to 50 ℃, and keep 1000sec at this temperature, make the surface of described some wafer silicon chips obtain abundant etching.
Experiment records, and in the present embodiment, through etching, the surface of the P type light dope silicon layer 102 exposing is very smooth, and after etching, the homogeneity (Uniformity) of the thickness of remaining P type light dope silicon layer 102 is 0.89%; P type heavy doping silicon layer is 22.3 to the etching selection ratio of P type light dope silicon layer.
The Data Comparison of respectively organizing data and prior art of the first embodiment to the four embodiment refers to table 1.
Table 1
In sum, the invention provides a kind of selectivity crystalline silicon etching liquid, by adding volume percent to be greater than 0vol% in the mixed solution at nitric acid and hydrofluoric acid and being less than or equal to 50vol% acetic acid, reduce the specific inductivity of etching liquid, reduce the liberation degree of nitric acid and hydrofluoric acid, improve the etching selection ratio of P type heavy doping silicon layer to P type light dope silicon layer, and reduced the surface tension of etching liquid.Lithographic method and the application thereof of selectivity crystalline silicon etching liquid of the present invention, wafer silicon chip, compared with prior art have the following advantages:
1, selectivity crystalline silicon etching liquid of the present invention, comprise that volume percent is greater than 0vol% and is less than or equal to 50vol% acetic acid, compared with prior art, the specific inductivity that adds membership reduction etching liquid of acetic acid, thereby reduce the liberation degree of nitric acid and hydrofluoric acid, etch rate is reduced, increased the time of etching reaction, the etching selection ratio that has improved P type heavy doping silicon layer and P type light dope silicon layer, is improved the homogeneity of etching; In addition, acetic acid can reduce the surface tension of etching liquid, avoids etching reaction too fierce, etching reaction is become gently, thereby reduce the roughness on etching stop layer surface.
2, selectivity crystalline silicon etching liquid of the present invention also comprises that volume percent is greater than 0vol% and is less than or equal to the tensio-active agent of 50vol%, tensio-active agent add the surface tension that can further reduce etching liquid, improve the homogeneity of etching, reduce the roughness on etching stop layer surface.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.
Claims (10)
1. a selectivity crystalline silicon etching liquid, comprising:
Volume percent is greater than 0vol% and is less than or equal to the nitric acid of 80vol%;
Volume percent is greater than 0vol% and is less than or equal to 20vol% hydrofluoric acid; And
Volume percent is greater than 0vol% and is less than or equal to 50vol% acetic acid.
2. selectivity crystalline silicon etching liquid as claimed in claim 1, is characterized in that, described selectivity crystalline silicon etching liquid also comprises: volume percent is greater than 0vol% and is less than or equal to the tensio-active agent of 20vol%.
3. selectivity crystalline silicon etching liquid as claimed in claim 2, is characterized in that, the volumetric molar concentration of described tensio-active agent is 20%～80%.
4. selectivity crystalline silicon etching liquid as claimed in claim 2, is characterized in that, described tensio-active agent is:
General formula is R
1the carboxylic acid of-COOM or its metal-salt, wherein, R
1be an alkyl, M is a hydrogen ion or a metallic cation;
General formula is NH
2-R
2the hydramine of-OH, wherein, R
2it is an alkylidene group;
General formula is R
3-[R
4-O]
n-R
5ether, wherein, R
3and R
5identical or different and respectively do for oneself a hydrogen ion or an alkyl, R
4be an alkylidene group, n is more than or equal to 1 natural number; Or
The mixture of two or more above-mentioned tensio-active agents.
5. as the selectivity crystalline silicon etching liquid as described in any one in claim 1-4, it is characterized in that, the volumetric molar concentration of described acetic acid is 20%～90%.
6. as the selectivity crystalline silicon etching liquid as described in any one in claim 1-4, it is characterized in that, the volumetric molar concentration of described nitric acid is 10%～60%.
7. as the selectivity crystalline silicon etching liquid as described in any one in claim 1-4, it is characterized in that, the volumetric molar concentration of described hydrofluoric acid is 20%～60%.
8. a lithographic method for wafer silicon chip, comprising:
Provide as the selectivity crystalline silicon etching liquid as described in any one in claim 1-7;
Some wafer silicon chips are placed in to described selectivity crystalline silicon etching liquid;
Under closed environment, the selectivity crystalline silicon etching liquid that comprises some wafer silicon chips is heated to 25 ℃～50 ℃, and keep 10sec～1800sec at this temperature, make the surface of described some wafer silicon chips obtain etching.
9. one kind as the application of the lithographic method of the wafer silicon chip in claim 8, it is characterized in that, the lithographic method of described wafer silicon chip is for the silicon etching of wafer rear, the lowest layer of described wafer silicon chip is graph layer, on described graph layer, being P type heavy doping silicon layer, is P type light dope silicon layer on described P type heavy doping silicon layer.
10. as the application of the lithographic method of the wafer silicon chip in claim 9, it is characterized in that, described P type heavy doping silicon layer is greater than 10 to the etching selection ratio of P type light dope silicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210335557.1A CN103668210A (en) | 2012-09-11 | 2012-09-11 | Selective crystal silicon etchant, etching method of wafer silicon chip and application of selective crystal silicon etchant |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210335557.1A CN103668210A (en) | 2012-09-11 | 2012-09-11 | Selective crystal silicon etchant, etching method of wafer silicon chip and application of selective crystal silicon etchant |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103668210A true CN103668210A (en) | 2014-03-26 |
Family
ID=50306966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210335557.1A Pending CN103668210A (en) | 2012-09-11 | 2012-09-11 | Selective crystal silicon etchant, etching method of wafer silicon chip and application of selective crystal silicon etchant |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103668210A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104462711A (en) * | 2014-12-22 | 2015-03-25 | 东南大学 | Method for obtaining monocrystalline silicon holocrystalline face etching rate under action of surface active agents |
| CN110854018A (en) * | 2019-11-28 | 2020-02-28 | 长春长光圆辰微电子技术有限公司 | High-selectivity silicon etching solution and use method thereof |
| CN111370307A (en) * | 2018-12-26 | 2020-07-03 | 东莞新科技术研究开发有限公司 | Semiconductor etching method |
| CN111690411A (en) * | 2020-06-22 | 2020-09-22 | 长江存储科技有限责任公司 | Silicon etching liquid and etching method of semiconductor structure |
| CN113845917A (en) * | 2021-09-24 | 2021-12-28 | 上海提牛机电设备有限公司 | Cleaning solution and cleaning method for bent wafer |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5855323A (en) * | 1981-09-26 | 1983-04-01 | Toshiba Corp | Etching solution for silicon and silicon oxide film |
| JPH0641770A (en) * | 1992-07-27 | 1994-02-15 | Daikin Ind Ltd | Treatment for surface of silicon wafer |
| JPH07263429A (en) * | 1994-03-17 | 1995-10-13 | Matsushita Electron Corp | Selective etching liquid |
| US20010017344A1 (en) * | 1999-07-20 | 2001-08-30 | Aebi Verle W. | Electron bombarded passive pixel sensor imaging |
| US20020155964A1 (en) * | 2000-02-29 | 2002-10-24 | Showa Denko K.K. | Cleaning agent composition, method for cleaning and use thereof |
| CN1904016A (en) * | 2005-06-23 | 2007-01-31 | 气体产品与化学公司 | Composition for removal of residue comprising cationic salts and methods using same |
| CN1934221A (en) * | 2004-03-24 | 2007-03-21 | 高级技术材料公司 | Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers |
| EP1852905A1 (en) * | 2005-01-27 | 2007-11-07 | Shin-Etsu Handotai Company Limited | Method of selective etching and silicon single crystal substrate |
| US20070259463A1 (en) * | 2006-05-02 | 2007-11-08 | Youssef Abedini | Wafer-level method for thinning imaging sensors for backside illumination |
| US20100062611A1 (en) * | 2008-09-05 | 2010-03-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and Apparatus for Thinning a Substrate |
| CN102082069A (en) * | 2009-11-27 | 2011-06-01 | 北大方正集团有限公司 | Method for processing back surface of wafer |
-
2012
- 2012-09-11 CN CN201210335557.1A patent/CN103668210A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5855323A (en) * | 1981-09-26 | 1983-04-01 | Toshiba Corp | Etching solution for silicon and silicon oxide film |
| JPH0641770A (en) * | 1992-07-27 | 1994-02-15 | Daikin Ind Ltd | Treatment for surface of silicon wafer |
| JPH07263429A (en) * | 1994-03-17 | 1995-10-13 | Matsushita Electron Corp | Selective etching liquid |
| US20010017344A1 (en) * | 1999-07-20 | 2001-08-30 | Aebi Verle W. | Electron bombarded passive pixel sensor imaging |
| US20020155964A1 (en) * | 2000-02-29 | 2002-10-24 | Showa Denko K.K. | Cleaning agent composition, method for cleaning and use thereof |
| CN1934221A (en) * | 2004-03-24 | 2007-03-21 | 高级技术材料公司 | Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers |
| EP1852905A1 (en) * | 2005-01-27 | 2007-11-07 | Shin-Etsu Handotai Company Limited | Method of selective etching and silicon single crystal substrate |
| CN1904016A (en) * | 2005-06-23 | 2007-01-31 | 气体产品与化学公司 | Composition for removal of residue comprising cationic salts and methods using same |
| US20070259463A1 (en) * | 2006-05-02 | 2007-11-08 | Youssef Abedini | Wafer-level method for thinning imaging sensors for backside illumination |
| US20100062611A1 (en) * | 2008-09-05 | 2010-03-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and Apparatus for Thinning a Substrate |
| CN102082069A (en) * | 2009-11-27 | 2011-06-01 | 北大方正集团有限公司 | Method for processing back surface of wafer |
Non-Patent Citations (3)
| Title |
|---|
| 伦纳德.卡尔法亚等: "《酸化增产技术》", 31 July 2004, 石油工业出版社 * |
| 候承贵等: ""一种新的各向异性腐蚀液-乙醇胺水溶液"", 《半导体技术》 * |
| 章小鸽等: "《硅及其氧化物的电化学-表面反应、结构和微加工》", 30 September 2004, 化学工业出版社 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104462711A (en) * | 2014-12-22 | 2015-03-25 | 东南大学 | Method for obtaining monocrystalline silicon holocrystalline face etching rate under action of surface active agents |
| CN104462711B (en) * | 2014-12-22 | 2017-10-10 | 东南大学 | The acquisition methods of monocrystalline silicon holocrystalline face etch rate under Action of Surfactant |
| CN111370307A (en) * | 2018-12-26 | 2020-07-03 | 东莞新科技术研究开发有限公司 | Semiconductor etching method |
| CN110854018A (en) * | 2019-11-28 | 2020-02-28 | 长春长光圆辰微电子技术有限公司 | High-selectivity silicon etching solution and use method thereof |
| CN111690411A (en) * | 2020-06-22 | 2020-09-22 | 长江存储科技有限责任公司 | Silicon etching liquid and etching method of semiconductor structure |
| CN113845917A (en) * | 2021-09-24 | 2021-12-28 | 上海提牛机电设备有限公司 | Cleaning solution and cleaning method for bent wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103668210A (en) | Selective crystal silicon etchant, etching method of wafer silicon chip and application of selective crystal silicon etchant | |
| CN1746255B (en) | Polishing compound and method for polishing substrate | |
| US8075800B2 (en) | Polishing slurry and polishing method | |
| CN102016724B (en) | Photosensitive hardmask for microlithography | |
| CN103748517B (en) | Silicon-containing resist underlayer film-forming composition having sulfone structure | |
| JP5188175B2 (en) | Silica sol and method for producing the same | |
| JP6587065B2 (en) | Polymer-containing coating solution applied to resist pattern | |
| JP6801964B2 (en) | Polishing composition and silicon substrate polishing method | |
| WO2018168206A1 (en) | Polishing composition, production method therefor, and polishing method using polishing composition, and production method for substrate | |
| KR20170057238A (en) | Application solution for resist pattern coating | |
| CN104830234A (en) | A-directional sapphire mobile phone cover plate polishing solution and preparation method thereof | |
| JP2001035820A (en) | Cmp polishing solution | |
| Yu et al. | pH‐Responsive Round‐Way Motions of a Smart Device through Integrating Two Types of Chemical Actuators in One Smart System | |
| JPWO2016143323A1 (en) | Polishing composition and silicon substrate polishing method | |
| US8871032B2 (en) | Wet processing apparatuses | |
| CN107145044A (en) | The developer composition that a kind of FPD is used | |
| CN1576339B (en) | Polishing composition | |
| CN102005369B (en) | A kind of lithography alignment method for epitaxy technique | |
| Chen et al. | Influence of colloidal silica dispersion on the decrease of roughness in silicon chemical mechanical polishing | |
| TWI245165B (en) | Photosensitive siloxane resin composition and patterning method using it | |
| AU9730101A (en) | Polishing slurry for the chemical-mechanical polishing of silica films | |
| CN109082274A (en) | Etching solution and the obtained method without the remaining cell phone rear cover of fingerprint of the utilization etching solution | |
| JP2009192734A (en) | Method of manufacturing optical laminated body | |
| JPH07161669A (en) | Compound semiconductor polishing fluid and compound semiconductor polishing method using this fluid | |
| JPH0564335B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140326 |