CN103668207B - Etchant and the method using etchant manufacture display device - Google Patents
Etchant and the method using etchant manufacture display device Download PDFInfo
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- CN103668207B CN103668207B CN201210359316.0A CN201210359316A CN103668207B CN 103668207 B CN103668207 B CN 103668207B CN 201210359316 A CN201210359316 A CN 201210359316A CN 103668207 B CN103668207 B CN 103668207B
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Abstract
A kind of method the invention discloses etchant and using etchant manufacture display device.A kind of etchant according to an illustrative embodiment of the invention includes：Weight percent content is the persulfate of about 0.5% to about 20%；Weight percent content is the fluorine compounds of about 0.01% to about 2%；Weight percent content is the inorganic acid of about 1% to about 10%；Weight percent content is the cyclic amine compound of about 0.5% to about 5%；Weight percent content is the chlorine compound of about 0.1% to about 5%；Weight percent content is the mantoquita of about 0.05% to about 3%；Weight percent content is about 0.1% to about 10% organic acid or acylate；And water.
Description
Technical field
It is aobvious for manufacturing by using the etchant that the illustrative embodiments of the present invention are related to a kind of etchant and one kind
Show the method for equipment.
Background technology
Generally, when manufacturing thin-film transistor display panel, generally exist for grid lead and the metal level of data conductor
It is layered on substrate, and, hereafter, it may be necessary to etch metal level.
For grid lead and data conductor, it is used for satisfactory electrical conductivity and low-resistance copper.But working as makes
During with copper, it can be deposited during for the pattern of coating photoresist and formation photoresist using single Copper thin film
In difficulty.Therefore, multiple layer metal film can be applied to grid lead and data conductor.
For example, in multiple layer metal film, titanium/copper bilayer film is widely used.Regrettably, lose at the same time
In the case of carving titanium/copper bilayer film, etching outline is poor, so as to be had difficulties in subsequent process.
Accordingly, it is desirable to provide preferably to the related etching outline of etching titanium/Copper thin film.
Above- mentioned information disclosed in the background parts is only used for promoting the understanding of the background to the present invention, and therefore, it can
Include the information for not being formed in the prior art that the country has been well known for one of ordinary skill in the art.
The content of the invention
The present invention solves these demands and other demands, wherein, illustrative embodiments of the invention provide one kind
The etchant of desired etching outline is provided for the etching for titanium/Copper thin film.
The illustrative embodiments of the present invention disclose a kind of etchant.The etchant includes：About 0.5wt.%（Weight hundred
Divide and compare content）To about 20wt.% persulfate；About 0.01wt.% to about 2wt.% fluorine compounds；About 1wt.% to about 10wt.%
Inorganic acid；About 0.5wt.% to about 5wt.% cyclic amine compound；About 0.1wt.% to about 5wt.% chlorine compound；About
0.05wt.% to about 3wt.% mantoquita；About 0.1wt.% to about 10wt.% organic acid or acylate；And water.
The illustrative embodiments of the present invention disclose a kind of method that display device is manufactured using etchant.This method bag
Include and form gate metal layer on an insulating substrate.This method includes being formed by using gate metal layer described in etchant etching
Gate line including gate electrode.This method also includes forming gate insulator on the gate line.This method is included in described
Amorphous silicon layer and data metal layer are formed on gate insulator.This method is included by etching the amorphous silicon layer and the data
Metal level formation semiconductor, ohmic contact layer include the data wire and drain electrode of source electrode.This method is additionally included in passivation layer
It is upper to form the pixel electrode for being connected to the drain electrode.This method includes the etchant for etching process, and the etchant
Including：About 0.5wt.% to about 20wt.% persulfate；About 0.01wt.% to about 2wt.% fluorine compounds；About 1wt.% is to about
10wt.% inorganic acid；About 0.5wt.% to about 5wt.% cyclic amine compound；About 0.1wt.% to about 5wt.% chlorine compound；About
0.05wt.% to about 3wt.% mantoquita；About 0.1wt.% to about 10wt.% organic acid or acylate；And water.
It should be understood that overall description above is specifically described as exemplary and explanatory and aimed to provide with following
To claimed invention further instruction.
Brief description of the drawings
Fig. 1 is the layout view according to the thin-film transistor display panel of the illustrative embodiments of the present invention；
Fig. 2 is the profile along the line II-II in Fig. 1；And
Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7 and Fig. 8 be respectively show according to an illustrative embodiment of the invention be used for show
Show the profile of the manufacture method of the thin-film transistor display panel of equipment.
Embodiment
Hereafter the present invention will be described more fully with according to the accompanying drawing for showing embodiments of the present invention.However, the present invention can
Many different forms are embodied as, and should not be interpreted as being limited to embodiment cited herein.On the contrary, carried
These embodiments supplied make it that the disclosure is thorough and more fully table for a person skilled in the art
The scope of the present invention is reached.In the accompanying drawings, for clarity, the size and relative size in layer and region can be amplified.In the accompanying drawings
Same reference represents same element.
In the accompanying drawings, in order to clearly can be with amplification layer, film, panel and the thickness in region.It is same throughout the specification
Reference represents same element.It is appreciated that ought the element of such as layer, film, region or substrate be referred to as in another element
" on " when, can be directly in other elements or there may also be intermediary element.Contrastingly, when element is referred to as " directly existing
On another element " when, then in the absence of intermediary element.
It is appreciated that for disclosed purpose, " at least one " can be construed as meaning enumerating according to corresponding language
Element any combinations, include the combination of multiple elements enumerated.For example, " at least one of X, Y or Z " is understood that into
Mean two or more any combinations in only X, only Y, only Z or X, Y and Z（For example, XYZ, XZ, YZ）.
Then, etchant according to an illustrative embodiment of the invention will be described.
For example, the etchant is used for etching by titanium（Ti）Manufactured plain conductor or metallic film and bilayer including titanium
Film, in the bilayer film, copper（Cu）Or the metallic film including copper is formed on titanium（Ti）Or the metallic film including titanium
On.
The etchant may include persulfate, fluorine compounds, inorganic acid, cyclic amine compound, chlorine compound, mantoquita, have
Machine acid or acylate and the water of surplus.
Persulfate is for etch copper or the main component of the metallic film including copper, it can be envisaged that：Based on the erosion
The total amount of agent is carved, the content of included persulfate is about 5wt.% to about 20wt.%.If the content of persulfate is less than about
During 0.5wt.%, then the copper or metallic film including copper can not suitably be etched or etch-rate is very slow, on the other hand,
In the case that the content is greater than about 20wt.%, because etch-rate is too fast, therefore unmanageable etching process.
Persulfate can be potassium peroxydisulfate（K2S2O8）, sodium peroxydisulfate（Na2S2O8）And ammonium persulfate（(NH4)2S2O8）In
At least one material.
Fluorine compounds are the key component for etching titanium or metallic film including titanium, and its function is being lost to remove
Producible residual sand between setting a date.It is contemplated that：Based on the total amount of the etchant, the content of included fluorine compounds is about
0.01wt.% to about 2wt.%.If the content of fluorine compounds is less than about 0.01wt.%, due to titanium or the metallic film including titanium
Etch-rate decline, then can produce residual sand, on the other hand,
Fluorine compounds can be the compound that its a kind of fluorine ion or polyatomic fluorine ion dissociate in the solution, and can
Think at least one of ammonium fluoride, sodium fluoride, potassium fluoride, ammonium acid fluoride, sodium bifluoride or potassium hydrogen fluoride material.
Inorganic acid is to etch copper or the metallic film including copper and the pro-oxidant of titanium or the metallic film including titanium,
It is contemplated that：Based on the etchant total amount, the content of included inorganic acid is about 1wt.% to about 10wt.%.In inorganic acid
Content be less than about 1wt.% in the case of, due to copper or the metallic film including copper and titanium or the metallic film including titanium erosion
Etching speed may decline, then etching outline is poor and can produce residual sand, on the other hand, if the content is greater than about 10wt.%, by
In over etching and photoresist crackle can be produced, therefore the short circuit of wire is caused by the infiltration of drug solution.
Inorganic acid can be at least one of nitric acid, sulfuric acid, phosphoric acid or perchloric acid material.
The etch-rate that the cyclic amine compound is used for controlling copper or the metallic film including copper is provided.It is contemplated that：It is based on
The total amount of the etchant, the content of the included cyclic amine compound is about 0.5wt.% to about 5wt.%.In the cyclammonium chemical combination
In the case that the content of thing is less than about 0.5wt.%, due to being difficult to control the etch-rate of copper so as to over etching occurs.It is another
Aspect, when the content is greater than about 5wt.%, due to the etch-rate of copper may decline and etching period during increasing this,
Therefore the problem of productivity ratio aspect be present.
The cyclic amine compound can be 5- aminotetrazoles, imidazoles, indoles, purine, pyrazoles, pyridine, pyrimidine, pyrroles,
At least one of pyrrolidines or pyrrolin material.
The chlorine compound is to etch copper or the pro-oxidant of the metallic film including copper, and is provided to control cone
Angle.It is contemplated that：Based on the total amount of the etchant, the content of the included chlorine compound is about 0.1wt.% to about
5wt.%.The chlorine compound content be less than about 0.1wt.% in the case of, due to copper or the metallic film including copper etching
Speed declines, therefore etching outline is poor, on the other hand, if the content is greater than about 5wt.%, due to over etching occurs,
Therefore plain conductor may be removed.
The chlorine compound refers to the compound that can dissociate into chlorion, and can be hydrochloric acid（HCl）, sodium chloride
（NaCl）, potassium chloride（KCl）Or ammonium chloride（NH4Cl）At least one of material.
The mantoquita is provided to control CD（Critical Dimension, critical dimension）Deflection（skew）, it can be envisaged that：
Based on the total amount of the etchant, the content of the included mantoquita is about 0.05wt.% to about 3wt.%.In the content of the mantoquita
In the case of less than about 0.05wt.%, for each quantity of processed sheet material, the deviation of CD changes in skew is very big, separately
On the one hand, if the content is greater than about 3wt.%, because the oxidability of primary oxidant reduces, therefore the quantity of processed sheet material
Reduce.
The mantoquita can be copper nitrate（Cu（NO3）2）, copper sulphate（CuSO4）Or phosphoric acid cuprammonium（NH4CuPO4）In at least
A kind of material.
There is provided the organic acid or acylate so that prevent to etching by the chelation of the metal ion with etching
The influence of agent, to increase the quantity of processed sheet material.It is contemplated that：Based on the total amount of the etchant, this included has
The content of machine acid or acylate is about 0.1wt.% to about 10wt.%.It is less than about in the content of the organic acid or acylate
In the case of 0.1wt.%, in the absence of the increased effect of quantity of processed sheet material.When the content is greater than about 10wt.% situation
Under, in the absence of the extra increased effect of quantity of processed sheet material.
The organic acid or acylate can be acetic acid, butyric acid, citric acid, formic acid, gluconic acid, hydroxyacetic acid, malonic acid,
Oxalic acid, valeric acid, sulfobenzoic acid, sulfosuccinic acid, sulfophthalic acid, salicylic acid, sulfosalicylic acid, benzoic acid, lactic acid, glyceric acid
（glyseric acid）, butanedioic acid, hydroxysuccinic acid, tartaric acid, isocitric acid, acrylic acid, iminodiacetic acid and ethylenediamine
Tetraacethyl（EDTA）And at least one of these sour sodium salts, these sour sylvite or these sour ammonium salts material.
For example, water include deionized water, the deionized water for semiconductor machining, and can use about 18M Ω/cm or
Greater than about 18M Ω/cm water.For the total content of the etchant, included water for cause the copper-titanium etchant it is total
Surplus when weight is about 100wt.%.
In addition, etchant according to an illustrative embodiment of the invention may also include metal ion blocking agent and anticorrosive
Agent.
By using etchant according to an illustrative embodiment of the invention, the plain conductor being made of titanium or including titanium
Metallic film and bilayer film（Wherein, copper or the metallic film including copper are formed on titanium or the metallic film including titanium
On）Can effectively it be etched.
In addition, when manufacturing the flat-panel monitor of such as liquid crystal display and when manufacture semiconductor memory display panel
When, etchant according to an illustrative embodiment of the invention can be used.In addition, the gold for including being made of titanium even in manufacture
Belong to wire or metallic film and bilayer film including titanium（Wherein, copper or the metallic film including copper are formed in titanium or including titanium
Metallic film on）Another electronic equipment when, the etchant can also be used.
Then, be described below it is a kind of by using etchant according to an illustrative embodiment of the invention be used for manufacture
The method of display device.
Fig. 1 is the cloth according to the thin-film transistor display panel for display device of the illustrative embodiments of the present invention
Office's view, and Fig. 2 are the profile along the line II-II in Fig. 1.
In the thin-film transistor display panel for display device according to an illustrative embodiment of the invention, including
Multiple gate lines 121 of gate electrode 124 are formed on a substrate 110, and substrate 110 is by such as insulating materials system of glass or plastics
Into, and form gate insulator 140, multiple semiconductor layers 154, the and of multiple Ohmic contacts 163 in order on a substrate 110
165th, multiple data wires 171 and multiple drain electrodes 175.
Gate line 121 transmits signal and can extended in the horizontal direction, and gate electrode 124 is in gate line
121 top protrusion.
For example, gate line 121 can be formed by lower floor 124p and upper strata 124r, metals of the lower floor 124p by titanium or including titanium
It is made, and metals of the upper strata 124r by copper or including copper is made.
Data wire 171 transmits data-signal and can extend in vertical direction and can intersect with gate line 121.Respectively
Individual data wire 171 may include the multiple source electrodes 173 extended towards gate electrode 124.Based on gate electrode 124, drain electrode 175 can be with
Separate with data wire 171 and faced with source electrode 173.
For example, data wire 171, source electrode 173 and drain electrode 175 can be by lower floor 171p, lower floor 173p and lower floor 175p
Formed with upper strata 171r, upper strata 173r and upper strata 175r, lower floor 171p, lower floor 173p and lower floor 175p are by titanium or or including titanium
Metal is made, and the metal of upper strata 171r, upper strata 173r and upper strata 175r by copper or including copper is made.
Semiconductor layer 154 can be arranged on gate electrode 124, and Ohmic contact 163 and ohm on semiconductor layer
Contact 165 is provided only between semiconductor layer 154 and data wire 171 and drain electrode 175 so that contact resistance therebetween reduces.
One gate electrode, 124, source electrodes 173 and a drain electrode 175 form one thin together with semiconductor layer 154
Film transistor, and between source electrode 173 and drain electrode 175 at semiconductor layer 154 formed thin film transistor (TFT) passage.
Passivation layer 180 can be formed on data wire 171 and drain electrode 175 made of silicon nitride and silica.
The contact hole 185 of exposure drain electrode 175 can be formed on passivation layer 180, and pixel electrode 191 can be formed
Drain electrode 175 is connected on passivation layer 180, and by contact hole 185.
Then, Fig. 2 will be combined, with reference to figure 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7 and Fig. 8 description according to exemplary implementation of the invention
A kind of manufacture of mode is used for the method for the thin-film transistor display panel of display device.
Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7 and Fig. 8 are to show being used for according to an illustrative embodiment of the invention in order
The profile of the manufacture method of the thin-film transistor display panel of display device.
First, as shown in Figure 3, gate metal layer 120 includes lower gate metal layer 120p and upper gate metal layer 120r,
Lower gate metal layer 120p is by titanium or the metal including titanium is formed, and upper gate metal layer 120r is by copper or the metal shape including copper
Into gate metal layer 120 is formed on transparent insulating substrate 110.
Then, as shown in Figure 4, by using etchant etching grid gold according to an illustrative embodiment of the invention
Belong to layer 120 and form gate electrode 124, and gate insulator 140 forms the whole table in the dielectric substrate 110 including gate electrode 124
On face.
Gate electrode 124 may include the lower floor 124p that by titanium or the metal including titanium is formed and by copper or the metal shape including copper
Into upper strata 124r.
Then, as shown in Figure 5, for example, amorphous silicon layer 150, amorphous silicon layer 160 and data metal layer mixed with impurity
170 are sequentially stacked on gate insulator 140.Herein, data metal layer 170 may include by titanium or the metal including titanium
The lower data metal layer 170p that is formed and by copper or upper data metal layer 170r that the metal including copper is formed.
Then, as shown in figures 6 and 7, by using the etchant etching data metal according to illustrative embodiments
Layer 170, and include source electrode 173 by etching method for amorphous silicon layer 150 and thereon mixed with the amorphous silicon layer 160 of impurity to be formed
Data wire 171, drain electrode 175, ohmic contact layer 163, ohmic contact layer 165 and semiconductor layer 154.
For example, data wire 171, source electrode 173 and drain electrode 175 may include the lower floor that by titanium or the metal including titanium is formed
171p, lower floor 173p and lower floor 175p and by copper or upper strata 171r, upper strata 173r and upper strata 175r that the metal including copper is formed.
Then, as shown in Figure 8, in passivation layer 180 including data wire 171, drain electrode 175 and gate insulator 140
Whole surface on formed after, as shown in Figure 2, the contact hole 185 of exposed drain electrode 175, and pixel electrode 191 can be formed
It can be formed on passivation layer 180.
Hereinafter, by the property of the etchant by specific experiment example description according to an illustrative embodiment of the invention
Energy.
<Example 1>
Such as the description in table 1 below, 180kg etchant includes about 10wt.% sodium peroxydisulfate, about 0.5wt.% hydrogen fluoride
Ammonium, about 3wt.% nitric acid, about 1.5wt.% 5- aminotetrazoles, about 1.5wt.% sodium chloride, about 0.2wt.% copper sulphate,
About 3wt.% acetic acid and water.
<Example 2>
Such as the description in table 1 below, 180kg etchant includes about 15wt.% sodium peroxydisulfate, about 0.5wt.% hydrogen fluoride
Ammonium, about 2wt.% nitric acid, about 2wt.% 5- aminotetrazoles, about 1wt.% sodium chloride, about 0.01wt.% copper sulphate, about
5wt.% acetic acid and water.
<Example 3>
Such as the description in table 1 below, 180kg etchant includes about 8wt.% sodium peroxydisulfate, about 0.5wt.% hydrogen fluoride
Ammonium, about 5wt.% nitric acid, about 2.5wt.% 5- aminotetrazoles, about 1.2wt.% sodium chloride, about 0.1wt.% copper sulphate,
About 5wt.% acetic acid and water.
<Comparative example 1>
Such as the description in table 1 below, 180kg etchant includes about 10wt.% sodium peroxydisulfate, about 0.5wt.% hydrogen fluoride
Ammonium, about 3wt.% nitric acid, about 0.5wt.% 5- aminotetrazoles and water.
<Comparative example 2>
Such as the description in table 1 below, 180kg etchant includes about 5wt.% sodium peroxydisulfate, about 0.3wt.% hydrogen fluoride
Ammonium, about 2wt.% 5- aminotetrazoles, about 1wt.% sodium chloride, about 0.01wt.% copper sulphate, about 5wt.% acetic acid and
Water.
<Comparative example 3>
Such as the description in table 1 below, 180kg etchant includes about 13wt.% sodium peroxydisulfate, about 0.3wt.% hydrogen fluoride
Ammonium, about 2wt.% nitric acid, about 2wt.% 5- aminotetrazoles, about 0.01wt.% copper sulphate, about 5wt.% acetic acid and water.
<Comparative example 4>
Such as the description in table 1 below, 180kg etchant includes about 10wt.% sodium peroxydisulfate, about 0.5wt.% hydrogen fluoride
Ammonium, about 3wt.% nitric acid, about 2wt.% 5- aminotetrazoles, about 1.5wt.% sodium chloride, about 5wt.% acetic acid and water.
<Comparative example 5>
Such as the description in table 1 below, 180kg etchant includes about 10wt.% sodium peroxydisulfate, about 0.5wt.% hydrogen fluoride
Ammonium, about 3wt.% nitric acid, about 2.5wt.% 5- aminotetrazoles, about 1.5wt.% sodium chloride, about 0.2wt.% copper sulphate
And water.
（Table 1）
SPS：Sodium peroxydisulfate ABF：Ammonium acid fluoride
ATZ：5- aminotetrazoles AcOH：Acetic acid
<The assessment of experimental example 1- etching characteristics>
For example, the etchant and root according to the example 1 of the present invention, example 2 and example 3 are have evaluated by the following method
According to the etching characteristic of the etchant of comparative example 1, comparative example 2, comparative example 3, comparative example 4 and comparative example 5.
SiNx layer is deposited on glass, titanium film is deposited on SiNx layer, and copper layer deposition is on titanium film.In the copper film
On, by using diamond tool by substrate（The photoresist with predetermined shape forms pattern over the substrate）Cut into about
550mm × 650mm size prepares exemplar.
For example, the erosion by example 1, example 2, example 3, comparative example 1, comparative example 2, comparative example 3, comparative example 4 and comparative example 5
Carve agent to be put into the etching test equipment of nozzle types, and temperature is increased to about 25 DEG C.Hereinafter, increased in temperature
After about 30 DEG C ± 0.1 DEG C, etching process is performed.Based on the EPD on total etching period（Ending Point Detector,
Endpoint detector）, carry out 200% over etching.Exemplar is put into etching test equipment, starts to spray, in etching completion
After be taken out exemplar and be washed with deionized, and dried by using heated-air drying equipment, and by using
Photoresist stripper removes photoresist.After washing and drying, assessed and lost by using electronic scanner microscope
Characteristic is carved, and its result is described in table 2.
（Table 2）
Reference table 2, in the case of the etchant of the example 1 according to the present invention, example 2 and example 3, side（CD deflections）
About 0.5 μm to 1 μm and etching characteristic during about 40 ° to 60 ° of cone angle are fabulous.
In the case of the etchant according to comparative example 1, comparative example 2 and comparative example 5, side（CD deflections）About≤1.5 μm
With etching characteristic during about 30 ° to 60 ° of cone angle preferably, and in the case of according to the etchant of comparative example 3 and comparative example 4,
Etching characteristic is poor.
<The assessment of experimental example 2- storage characteristics>
Have evaluated by the following method the etchant of the example 1 according to the present invention of the etching characteristic that has had with according to than
Compared with the storage characteristic of the etchant of example 1, comparative example 2, comparative example 3, comparative example 4 and comparative example 5.
The etchant of example 1, comparative example 1 and comparative example 5 is prepared into sufficiently large amount, will be performed with reference to surplus after etching
Remaining etchant is stored at about 10 DEG C, is etched test again under identical condition daily, while test with
With reference to the Comparative result of test, and result illustrates in table 3.
（Table 3）
| First day | Second day | 3rd day | 4th day | 5th day | |
| Example 1 | ◎ | ◎ | ◎ | ◎ | ◎ |
| Comparative example 1 | ◎ | ◎ | ◎ | × | × |
| Comparative example 5 | ◎ | ◎ | × | × | × |
◎：It is fabulous（Relative to the variable quantity with reference to etching within 10%）
×：Difference（It is more than 10% relative to the variable quantity with reference to etching）
Reference table 3, in the case of the etchant of the example 1 of the present invention, even more than regular hour storage characteristic
It is fabulous, in the case of the etchant according to comparative example 1, storage characteristic is poor after 4 days, and according to comparative example
In the case of 5 etchant, storage characteristic is poor after 3 days.
<The assessment of the quantity of sheet material processed experimental example 3->
The etchant and basis of the example 1 according to the present invention with superior etch characteristic are assessed by using following methods
Comparative example 1, comparative example 2, comparative example 3 and comparative example 4 etchant process sheet material quantity.
Carried out by using the etchant of example 1, comparative example 1 and comparative example 4 with reference to etching, and by adding about 1,
The copper powder of 000ppm amount, which realizes, to be completely dissolved.Then, etching test is performed again, and in side etching relative to reference
In the case that the variable quantity of etching exceedes with reference to etching about 10%, the quantity of sheet material is assessed as difference.As a result illustrate in table 4.
（Table 4）
| 1000ppm | 2000ppm | 3000ppm | 4000ppm | |
| Example 1 | ◎ | ◎ | ◎ | ◎ |
| Comparative example 1 | ◎ | × | × | × |
| Comparative example 4 | ◎ | × | × | ◎ |
◎：It is fabulous（When the quantity of sheet material changes over time, relative to variable quantity≤10% with reference to etching）
×：Difference（When the quantity of sheet material changes over time, relative to variable quantity >=10% with reference to etching）
Reference table 4, in the case of the etchant of the example 1 according to the present invention, the quantity of sheet material is fabulous and with copper powder
Measure it is unrelated, but in the case of the etchant according to comparative example 1, when the amount of copper powder is about 2000ppm or during more than 2000ppm,
The quantity of sheet material is poor, and in the case of the etchant according to comparative example 4, when the amount of copper powder be about 2000ppm with
During 3000ppm, the quantity of sheet material is poor.
As described above, it can be seen that the etching having been had according to the etchant of the example 1 of the present invention, example 2, example 3
Characteristic, good storage characteristic and the measured characteristic of processed number of sheets, and according to not including inorganic acid, chlorine compound, mantoquita
The etchant of comparative example 1, comparative example 2, comparative example 3, comparative example 4 and comparative example 5 with organic acid has the etching characteristic of difference, difference
Storage characteristic and processed sheet material quantity difference characteristic.
It would be apparent to those skilled in the art that the present invention can make a variety of variations and changes without
Depart from the spirit and scope of the present invention.Therefore, it is contemplated that covering to variant of the invention and change, if these modifications and
Change falls in the range of appended claims and equivalent claim.
Claims (16)
1. a kind of etchant, the etchant includes：
Weight percent content is 0.5% to 20% persulfate；
Weight percent content is 0.01% to 2% fluorine compounds；
Weight percent content is 1% to 10% inorganic acid；
Weight percent content is 0.5% to 5% cyclic amine compound；
Weight percent content is 0.1% to 5% chlorine compound；
Weight percent content is 0.05% to 3% mantoquita；
Weight percent content is 0.1% to 10% organic acid or acylate；And
Water,
Wherein, the mantoquita includes being selected from least one of copper nitrate or copper sulphate compound.
2. etchant according to claim 1, wherein, the persulfate include selected from potassium peroxydisulfate, sodium peroxydisulfate or
At least one of ammonium persulfate compound.
3. etchant according to claim 1, wherein, the fluorine compounds are included selected from ammonium fluoride, sodium fluoride, fluorination
At least one of potassium, ammonium acid fluoride, sodium bifluoride or potassium hydrogen fluoride compound.
4. etchant according to claim 1, wherein, the inorganic acid includes being selected from nitric acid, sulfuric acid, phosphoric acid or perchloric acid
At least one of compound.
5. etchant according to claim 1, wherein, the cyclic amine compound include selected from 5- aminotetrazoles, imidazoles,
At least one of indoles, purine, pyrazoles, pyridine, pyrimidine, pyrroles, pyrrolidines or pyrrolin compound.
6. etchant according to claim 1, wherein, the chlorine compound include selected from hydrochloric acid, sodium chloride, potassium chloride or
At least one of ammonium chloride compound.
7. etchant according to claim 1, wherein,
The organic acid include selected from acetic acid, butyric acid, citric acid, formic acid, gluconic acid, hydroxyacetic acid, malonic acid, oxalic acid, valeric acid,
Sulfobenzoic acid, sulfosuccinic acid, sulfophthalic acid, salicylic acid, sulfosalicylic acid, benzoic acid, lactic acid, glyceric acid, butanedioic acid, hydroxyl
At least one of succinic acid, tartaric acid, isocitric acid, acrylic acid, iminodiacetic acid or ethylenediamine tetra-acetic acid compound；With
And
The acylate is included selected from acetic acid, butyric acid, citric acid, formic acid, gluconic acid, hydroxyacetic acid, malonic acid, oxalic acid, penta
Acid, sulfobenzoic acid, sulfosuccinic acid, sulfophthalic acid, salicylic acid, sulfosalicylic acid, benzoic acid, lactic acid, glyceric acid, butanedioic acid,
Hydroxysuccinic acid, tartaric acid, isocitric acid, acrylic acid, iminodiacetic acid or ethylenediamine tetra-acetic acid compound sylvite, sodium
At least one of salt or ammonium salt compound.
8. a kind of method for manufacturing display device, methods described includes：
Gate metal layer is formed on an insulating substrate；
Being formed by using gate metal layer described in etchant etching includes the gate line of gate electrode；
Gate insulator is formed on the gate line；
Amorphous silicon layer and data metal layer are formed on the gate insulator；
Include the number of source electrode by etching the amorphous silicon layer and data metal layer formation semiconductor, ohmic contact layer
According to line and drain electrode；And
The pixel electrode for being connected to the drain electrode is formed over the passivation layer；
Wherein, the etchant includes：
Weight percent content is 0.5% to 20% persulfate；
Weight percent content is 0.01% to 2% fluorine compounds；
Weight percent content is 1% to 10% inorganic acid；
Weight percent content is 0.5% to 5% cyclic amine compound；
Weight percent content is 0.1% to 5% chlorine compound；
Weight percent content is 0.05% to 3% mantoquita；
Weight percent content is 0.1% to 10% organic acid or acylate；And
Water,
Wherein, the mantoquita includes being selected from least one of copper nitrate or copper sulphate compound.
9. according to the method for claim 8, wherein, the gate metal layer and the data metal layer include titanium or including
The metal of titanium, and the gate metal layer and the data metal layer include copper or the metal including copper.
10. the method according to claim 11, wherein, by using data metal layer described in the etchant etching.
11. according to the method for claim 10, wherein, the persulfate include selected from potassium peroxydisulfate, sodium peroxydisulfate or
At least one of ammonium persulfate compound.
12. according to the method for claim 11, wherein, the fluorine compounds are included selected from ammonium fluoride, sodium fluoride, fluorination
At least one of potassium, ammonium acid fluoride, sodium bifluoride or potassium hydrogen fluoride compound.
13. according to the method for claim 12, wherein, the inorganic acid includes being selected from nitric acid, sulfuric acid, phosphoric acid or perchloric acid
At least one of compound.
14. according to the method for claim 13, wherein, the cyclic amine compound include selected from 5- aminotetrazoles, imidazoles,
At least one of indoles, purine, pyrazoles, pyridine, pyrimidine, pyrroles, pyrrolidines or pyrrolin compound.
15. according to the method for claim 14, wherein, the chlorine compound include selected from hydrochloric acid, sodium chloride, potassium chloride or
At least one of ammonium chloride compound.
16. the method according to claim 11, wherein,
The organic acid include selected from acetic acid, butyric acid, citric acid, formic acid, gluconic acid, hydroxyacetic acid, malonic acid, oxalic acid, valeric acid,
Sulfobenzoic acid, sulfosuccinic acid, sulfophthalic acid, salicylic acid, sulfosalicylic acid, benzoic acid, lactic acid, glyceric acid, butanedioic acid, hydroxyl
At least one of succinic acid, tartaric acid, isocitric acid, acrylic acid, iminodiacetic acid or ethylenediamine tetra-acetic acid compound；With
And
The acylate is included selected from acetic acid, butyric acid, citric acid, formic acid, gluconic acid, hydroxyacetic acid, malonic acid, oxalic acid, penta
Acid, sulfobenzoic acid, sulfosuccinic acid, sulfophthalic acid, salicylic acid, sulfosalicylic acid, benzoic acid, lactic acid, glyceric acid, butanedioic acid,
Hydroxysuccinic acid, tartaric acid, isocitric acid, acrylic acid, iminodiacetic acid or ethylenediamine tetra-acetic acid compound sylvite, sodium
At least one of salt or ammonium salt compound.
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| KR20160027598A (en) * | 2014-09-01 | 2016-03-10 | 삼성디스플레이 주식회사 | Etchant composition, method of forming a transparent electrode and method of manufacturing a display substrate using the same |
| CN104233302B (en) * | 2014-09-15 | 2016-09-14 | 南通万德科技有限公司 | A kind of etching solution and application thereof |
| KR20160109588A (en) * | 2015-03-12 | 2016-09-21 | 동우 화인켐 주식회사 | Etching solution composition for indium oxide layer and manufacturing method of an array substrate for liquid crystal display using the same |
| TWI675093B (en) * | 2015-03-26 | 2019-10-21 | 南韓商東友精細化工有限公司 | Etchant composition and method of manufacturing array substrate for liquid crystal display |
| TWI674335B (en) * | 2015-07-24 | 2019-10-11 | 南韓商東友精細化工有限公司 | Etchant composition, method for manufacturing array substrate for liquid crystal display device and array substrate using the same |
| KR101963179B1 (en) * | 2015-07-30 | 2019-03-29 | 삼성디스플레이 주식회사 | Etchant and manufacturing method of thin film transistor substrate using the same |
| KR102468320B1 (en) * | 2015-08-04 | 2022-11-18 | 동우 화인켐 주식회사 | Etching composition for metal layer |
| KR102663554B1 (en) * | 2016-06-10 | 2024-05-08 | 삼성디스플레이 주식회사 | Etchant composition and method of fabricating thin film transistor array panel using the same |
| KR102707568B1 (en) * | 2016-12-09 | 2024-09-19 | 동우 화인켐 주식회사 | Etching solution composition, etching method using thereof and preparing method of an array substrate for display using the same |
| KR102554816B1 (en) * | 2018-04-23 | 2023-07-12 | 삼성디스플레이 주식회사 | Echant composition and manufacturing method of metal pattern using the same |
| KR102661845B1 (en) * | 2018-10-11 | 2024-04-30 | 삼성디스플레이 주식회사 | Echtant and method for manufacturing display device using the same |
| KR20220051612A (en) * | 2020-10-19 | 2022-04-26 | 동우 화인켐 주식회사 | Etchant composition and manufacturing method of an array substrate for display device using the same |
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