CN103667775A - Copper alloy semiconductor lead frame - Google Patents

Copper alloy semiconductor lead frame Download PDF

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CN103667775A
CN103667775A CN201310615729.5A CN201310615729A CN103667775A CN 103667775 A CN103667775 A CN 103667775A CN 201310615729 A CN201310615729 A CN 201310615729A CN 103667775 A CN103667775 A CN 103667775A
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lead frame
semiconductor lead
cold rolling
copper alloy
annealing
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CN103667775B (en
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毛秧群
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Guangdong Gaohang Intellectual Property Operation Co ltd
Guangdong Xianjie Electronic Co ltd
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YUYAO SHISEN COPPER FACTORY
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Abstract

The invention provides a copper alloy semiconductor lead frame. The most matched alloy components and processing technologies are determined through optimization of components of a precipitation strengthened Ni-Fe-P-Cu alloy system and reasonable control on the annealing temperature, the annealing time as well as cold-rolling technological parameters; and the heat treatment time is shortened, the production efficiency is improved, meanwhile, a precipitation hardened copper alloy with an excellent mechanical property and conductivity is obtained, and then the copper alloy is finally molded into the semiconductor lead frame through a molding technology.

Description

One Albatra metal-semiconductor lead frame
Technical field
The present invention relates to the technical field of semiconductor packages, semiconductor lead frame copper alloy and that manufactured by this copper alloy of a kind of mechanical property and conductivity excellence is particularly provided.
Background technology
Cu alloy material has excellent physical strength and good conductivity, and production cost is relatively cheap in addition, thereby is widely used in the electronic apparatus part manufacture field such as semiconductor lead frame.
Yet along with the trend of the Industrial products such as unicircuit to high-density, miniaturization, multifunction development, for intensity, the conductivity of the copper alloy as lead frame base mateiral, more and more higher requirement has also been proposed.For copper alloy, have excellent physical strength and the requirements at the higher level of conductivity concurrently, precipitation hardening is a kind of method of comparatively effectively improving copper alloy performance, the copper alloy of copper nickel phosphorus system particularly, its precipitation hardening ability is comparatively outstanding, obtain more research and application, for example, disclosed a kind of precipitation hardenable copper alloy of copper nickel phosphorus system with sharp document CN200880126328.0.
Yet existing precipitation hardenable copper alloy all needs to carry out long thermal treatment to improve alloy property, thereby be met the copper alloy of requirement, for example, in the preparation section in CN200880126328.0, with regard to having comprised, the copper alloy after cold rolling carried out to the thermal treatment of at least 2 hours.Not only there is defect in such preparation technology, be also uneconomic on cost in production efficiency.
Summary of the invention
Object of the present invention is to provide a kind of semiconductor lead frame that precipitation hardenable copper alloy reasonable, excellent performance is manufactured that forms.
Technical scheme of the present invention is achieved in that
The raw-material preparation of copper alloy:
One, batching: take weight percent as 0.15-0.2Ni, 0.15-0.2Fe, 0.09-0.12P, 0.1-0.15Zn, 0.25-0.3Sn, surplus as Cu and inevitably impurity join and get raw material, wherein must meet (Ni+Fe): P=3-3.5, described raw material is that purity is the powder of 99.99% oxygen free copper and purity each alloying element that is 99.9%;
Two, melting: the raw material preparing is carried out under nitrogen protection atmosphere in high frequency furnace to melting, described melting is for first mixing Cu, Zn, Sn to insert in stove, temperature is risen to 1230-1250 ℃ and continue to stir melt and fully mix, add subsequently Ni, Fe and P, continue to be warming up to 1280-1300 ℃ and be also incubated and carry out melting, after melting, water casting copper alloys ingot;
Three, hot rolling: carry out hot rolling to desired thickness after copper alloy ingot is heated to 950-980 ℃, finishing temperature is controlled at 730-750 ℃;
Four, cold rolling processing: the copper alloy of hot rolling is carried out after milling face scale removal to the cold rolling processing of 70-75% draft;
Five, anneal+cold rolling processing: the copper alloy that cold rolling processing is obtained is under the condition of 570-600 ℃ after anneal 1.5-2min, again carry out the cold rolling processing of 40-45% draft, reduce subsequently annealing temperature to 530-550 ℃ again after anneal 1.5-2min, carry out again the cold rolling processing of 40-45% draft, subsequently at 530-550 ℃ again after anneal 1.5-2min, carry out again the cold rolling desired thickness that is worked into of 40-45% draft, finally at 380-400 ℃ of condition annealing 2-3min, be precipitated sclerotic type copper alloy;
The preparation of semiconductor lead frame:
One, impact briquetting: be semiconductor lead frame work in-process by impact briquetting by the precipitation hardenable copper alloy preparing before;
Two, electroplate: will carry out electroplating processes to form overlay coating through cleaning pretreated semiconductor lead frame work in-process, described coating is at least one in the group of nickel, palladium, gold and silver or its alloy formation;
Three, final shaping unit: the semiconductor lead frame work in-process through electroplating processes are carried out to slice processing with final molding.
Wherein preferred, described hot rolling is 1.5-2mm to desired thickness, and the passage of hot rolling is at least 6.
Further preferred, in described anneal+cold rolling processing, the final cold rolling desired thickness that is worked into is 0.2-0.4mm.
Further preferred, alloying element content is 0.17Ni, 0.17Fe, 0.1P.
Further preferred, the content of alloy element Zn is 0.12.
Further preferred, the content of alloying element Sn is 0.28.
Further preferred, in anneal+cold rolling processing, the temperature of annealing is 580 ℃ for the first time, and annealing time is 1.8min; Rear twice annealed temperature is 540 ℃, and annealing time is 1.8min; The temperature of final annealing is 380 ℃, and annealing time is 2min.
Further preferred, in anneal+cold rolling processing, the draft of cold rolling processing is 43%.
Further preferred, described overlay coating is the coating of nickel or its alloy.
The invention has the advantages that: selected ferronickel phosphor-copper precipitation strength type alloy system, optimized the proportioning of each alloying element, and Zn, Sn alloying element have been added in right amount, control annealing temperature, annealing time and cold-rolling process parameter, shortened heat treatment time, improved production efficiency, obtained the precipitation hardenable copper alloy that has excellent mechanical property and conductivity concurrently simultaneously, and the preparation of precipitation hardenable copper alloy has been become to semiconductor lead frame.
Embodiment
Embodiment 1-6, and comparative example 1*-8*:
One, batching: match well and get raw material with the weight percent shown in table 1, described raw material is that purity is the powder of 99.99% oxygen free copper and purity each alloying element that is 99.9%;
Two, melting: the raw material preparing is carried out under nitrogen protection atmosphere in high frequency furnace to melting, described melting is for first mixing Cu, Zn, Sn to insert in stove, temperature is risen to 1240 ℃ and continue to stir melt and fully mix, add subsequently Ni, Fe and P, continuing to be warming up to 1300 ℃ is also incubated and carries out melting, after melting, casting obtains Ф 30mm, the copper alloy ingot of long 200mm;
Three, hot rolling: carry out 6 passage hot rollings to 8mm after copper alloy ingot is heated to 960 ℃, finishing temperature is controlled at 740 ℃;
Four, cold rolling processing: the copper alloy of hot rolling is carried out after milling face scale removal to the cold rolling processing of 75% draft;
Five, anneal+cold rolling processing: the thick copper alloy of 2mm that cold rolling processing is obtained is under the condition of 570 ℃ after anneal 1.5min, again carry out the cold rolling processing of 40% draft, reduce subsequently annealing temperature to 530 ℃ again after anneal 1.5min, carry out again the cold rolling processing of 40% draft, subsequently at 530 ℃ again after anneal 1.5min, carry out again the cold rolling desired thickness that is worked into of 40% draft, finally at 380 ℃ of condition annealing 2min, be precipitated sclerotic type copper alloy.
Table 1
Figure BDA0000424163070000051
As shown in Table 1, the content of Ni, Fe, P and correlation proportion have very important impact for the over-all properties of copper alloy, first the interpolation of P can not be excessive, otherwise will make Drawing abillity severe exacerbation, its addition must be limited in below 0.12%, but can not be very little, otherwise will be difficult to reach the object of precipitation strength, therefore at least add 0.09%; And in order to form Ni, Fe, P composite precipitation strengthening precipitated phase, should meet (Ni+Fe): P=3-3.5, the excessive raising that is unprofitable to intensity of ratio causes the deterioration of processing characteristics and conductivity on the contrary, the too small demand that is difficult to form composite precipitation strengthening precipitated phase of ratio.Particularly preferred, alloying element percentage composition is 0.17Ni, 0.17Fe, 0.1P.Zn and Sn also play great role for the raising of intensity in alloy system of the present invention, but too high addition can not proportional raising intensity, can worsen processing characteristics on the contrary, too low addition does not produce corresponding effect, particularly preferred, coordinate the Zn of interpolation 0.12% and 0.28% Sn.
Embodiment 7-10, and comparative example 9*-12*, the composition of alloy is identical with embodiment 2, annealing temperature and time (A) for the first time, the annealing temperature of latter twice and time (B), the temperature and time of final annealing (C), the preparation technology parameters such as the draft of cold rolling processing are referring to table 2.
Table 2
Figure BDA0000424163070000061
As shown in Table 2, the temperature of annealing first, process annealing and final annealing is unsuitable too high, otherwise will cause the intensity of copper alloy not reach requirement, but can not be too low, the too low effect that does not have annealing, causes processing characteristics and conductivity not to reach requirement, the impact of cold rolling processing in the middle of simultaneously considering, the temperature setting of annealing first should be set to the temperature higher than process annealing, it is low that the temperature of final annealing should be tried one's best; And annealing time also should be moderate, long annealing time is not only unprofitable to the significantly raising of processing characteristics and conductivity, also can cause the deterioration of intensity, be also simultaneously that totally unfavorable, too short annealing time is but less than the object of annealing modification in production efficiency, production energy consumption; Particularly preferred, the temperature of annealing is 580 ℃ first, and annealing time is 1.8min; The temperature of process annealing is 540 ℃, and annealing time is 1.8min; The temperature of final annealing is 380 ℃, and annealing time is 2min.The draft of cold rolling processing need to be controlled at 40-45%, and too high draft can cause the deterioration of processing characteristics and conductivity, and too low draft does not have increase strengthening phase and separates out, the object of compensation annealing loss of strength.
Embodiment 11 is that the copper alloy that adopts embodiment 9 to obtain is prepared semiconductor lead frame, specifically:
One, impact briquetting: be semiconductor lead frame work in-process by impact briquetting by copper alloy;
Two, electroplate: will carry out electroplating processes to form overlay coating through cleaning pretreated semiconductor lead frame work in-process, described coating is nickel layer;
Three, final shaping unit: the semiconductor lead frame work in-process through electroplating processes are carried out to slice processing with final molding.
To sum up, the present invention is by the constituent optimization of ferronickel phosphor-copper precipitation strength type alloy system, and rationally control annealing temperature, annealing time and cold-rolling process parameter, determine alloying constituent and the complete processing of coupling the most, shortened heat treatment time, improved production efficiency, obtained the precipitation hardenable copper alloy that has excellent mechanical property and conductivity concurrently simultaneously, by moulding process, it is shaped to semiconductor lead frame the most at last.

Claims (9)

1. an Albatra metal-semiconductor lead frame, it is obtained by following preparation process:
The raw-material preparation of copper alloy:
One, batching: take weight percent as 0.15-0.2Ni, 0.15-0.2Fe, 0.09-0.12P, 0.1-0.15Zn, 0.25-0.3Sn, surplus as Cu and inevitably impurity join and get raw material, wherein must meet (Ni+Fe): P=3-3.5, described raw material is that purity is the powder of 99.99% oxygen free copper and purity each alloying element that is 99.9%;
Two, melting: the raw material preparing is carried out under nitrogen protection atmosphere in high frequency furnace to melting, described melting is for first mixing Cu, Zn, Sn to insert in stove, temperature is risen to 1230-1250 ℃ and continue to stir melt and fully mix, add subsequently Ni, Fe and P, continue to be warming up to 1280-1300 ℃ and be also incubated and carry out melting, after melting, water casting copper alloys ingot;
Three, hot rolling: carry out hot rolling to desired thickness after copper alloy ingot is heated to 950-980 ℃, finishing temperature is controlled at 730-750 ℃;
Four, cold rolling processing: the copper alloy of hot rolling is carried out after milling face scale removal to the cold rolling processing of 70-75% draft;
Five, anneal+cold rolling processing: the copper alloy that cold rolling processing is obtained is under the condition of 570-600 ℃ after anneal 1.5-2min, again carry out the cold rolling processing of 40-45% draft, reduce subsequently annealing temperature to 530-550 ℃ again after anneal 1.5-2min, carry out again the cold rolling processing of 40-45% draft, subsequently at 530-550 ℃ again after anneal 1.5-2min, carry out again the cold rolling desired thickness that is worked into of 40-45% draft, finally at 380-400 ℃ of condition annealing 2-3min, be precipitated sclerotic type copper alloy;
The preparation of semiconductor lead frame:
One, impact briquetting: be semiconductor lead frame work in-process by impact briquetting by the precipitation hardenable copper alloy preparing before;
Two, electroplate: will carry out electroplating processes to form overlay coating through cleaning pretreated semiconductor lead frame work in-process, described coating is at least one in the group of nickel, palladium, gold and silver or its alloy formation;
Three, final shaping unit: the semiconductor lead frame work in-process through electroplating processes are carried out to slice processing with final molding.
2. semiconductor lead frame according to claim 1, is characterized in that: described hot rolling is 1.5-2mm to desired thickness, and the passage of hot rolling is at least 6.
3. semiconductor lead frame according to claim 1, is characterized in that: in described anneal+cold rolling processing, the final cold rolling desired thickness that is worked into is 0.2-0.4mm.
4. semiconductor lead frame according to claim 1, is characterized in that: alloying element content is 0.17Ni, 0.17Fe, 0.1P.
5. semiconductor lead frame according to claim 1, is characterized in that: the content of alloy element Zn is 0.12.
6. semiconductor lead frame according to claim 1, is characterized in that: the content of alloying element Sn is 0.28.
7. semiconductor lead frame according to claim 1, is characterized in that: in anneal+cold rolling processing, the temperature of annealing is 580 ℃ for the first time, and annealing time is 1.8min; Rear twice annealed temperature is 540 ℃, and annealing time is 1.8min; The temperature of final annealing is 380 ℃, and annealing time is 2min.
8. semiconductor lead frame according to claim 1, is characterized in that: in anneal+cold rolling processing, the draft of cold rolling processing is 43%.
9. semiconductor lead frame according to claim 1, is characterized in that: described overlay coating is the coating of nickel or its alloy.
CN201310615729.5A 2013-11-27 2013-11-27 A kind of Copper alloy semiconductor lead frame Expired - Fee Related CN103667775B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105088009A (en) * 2015-07-26 2015-11-25 邢桂生 Copper alloy frame strip and making method thereof
CN105088006A (en) * 2015-09-02 2015-11-25 宁波兴业盛泰集团有限公司 Low-cost and stress-relaxation-resistant copper alloy lead frame material and preparation method thereof
TWI790062B (en) * 2020-12-28 2023-01-11 日商松田產業股份有限公司 Plated structure with Ni plating film and lead frame including the plated structure

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000119779A (en) * 1998-10-15 2000-04-25 Dowa Mining Co Ltd Copper alloy for lead frame excellent in etching workability and its production
JP2007039735A (en) * 2005-08-03 2007-02-15 Kobe Steel Ltd Method for producing copper alloy sheet with deformed cross section
CN102560181A (en) * 2010-12-08 2012-07-11 日立电线株式会社 Copper alloy material for electrical and electronic component
CN102983083A (en) * 2012-12-24 2013-03-20 厦门永红科技有限公司 Lead wire frame and production method thereof
JP2013087338A (en) * 2011-10-19 2013-05-13 Hitachi Cable Ltd High strength and high conductive copper alloy and manufacturing method thereof
JP2013185232A (en) * 2012-03-09 2013-09-19 Hitachi Cable Ltd Copper alloy material and method for manufacturing copper alloy material

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000119779A (en) * 1998-10-15 2000-04-25 Dowa Mining Co Ltd Copper alloy for lead frame excellent in etching workability and its production
JP2007039735A (en) * 2005-08-03 2007-02-15 Kobe Steel Ltd Method for producing copper alloy sheet with deformed cross section
CN102560181A (en) * 2010-12-08 2012-07-11 日立电线株式会社 Copper alloy material for electrical and electronic component
JP2013087338A (en) * 2011-10-19 2013-05-13 Hitachi Cable Ltd High strength and high conductive copper alloy and manufacturing method thereof
JP2013185232A (en) * 2012-03-09 2013-09-19 Hitachi Cable Ltd Copper alloy material and method for manufacturing copper alloy material
CN102983083A (en) * 2012-12-24 2013-03-20 厦门永红科技有限公司 Lead wire frame and production method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105088009A (en) * 2015-07-26 2015-11-25 邢桂生 Copper alloy frame strip and making method thereof
CN105088006A (en) * 2015-09-02 2015-11-25 宁波兴业盛泰集团有限公司 Low-cost and stress-relaxation-resistant copper alloy lead frame material and preparation method thereof
TWI790062B (en) * 2020-12-28 2023-01-11 日商松田產業股份有限公司 Plated structure with Ni plating film and lead frame including the plated structure

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Inventor after: Zheng Feng

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