CN103650344A - SAW filter having planar barrier layer and method of making - Google Patents

SAW filter having planar barrier layer and method of making Download PDF

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Publication number
CN103650344A
CN103650344A CN201280035023.5A CN201280035023A CN103650344A CN 103650344 A CN103650344 A CN 103650344A CN 201280035023 A CN201280035023 A CN 201280035023A CN 103650344 A CN103650344 A CN 103650344A
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barrier layer
conductor
diffusion barrier
layer
plane
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CN201280035023.5A
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CN103650344B (en
Inventor
J·W·埃迪克松
P·坎德拉
T·J·布恩巴尔
J·P·噶比诺
M·D·杰弗
A·K·斯塔姆佩尔
R·L·沃夫
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H03H9/14541—Multilayer finger or busbar electrode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Abstract

Disclosed herein is a surface acoustic wave (SAW) filter and method of making the same. The SAW filter includes a piezoelectric substrate (110; Fig 3); a planar barrier layer (120) disposed above the piezoelectric substrate, and at least one conductor buried (130) in the piezoelectric substrate and the planar barrier layer.

Description

SAW filter and the manufacture method thereof with plane barrier layer
Technical field
The disclosure relates generally to surface acoustic wave (SAW) filter, more particularly, relates to the SAW filter device and the manufacture method thereof that comprise plane barrier layer.
Background technology
Surface acoustic wave (SAW) filter is usually used in such as the radio frequency in the device of wireless communication system (RF) filtering because chip size is little and insertion loss is low.The performance of SAW filter depends on the characteristic of the SAW propagating in piezoelectric substrate.Near the frequency of the low SAW filter of frequency-temperature coefficient (TCF) the passband center of device causes larger temperature independence.
Buried metal SAW filter is used, and demonstrates high electromagnetic coupled (high bandwidth), but satisfied TCF may not be provided.Other challenges of buried metal SAW filter are included in during the polishing of manufacture or etching step the damage of piezoelectric substrate and the thickness that is difficult to control buried electrode, and it affects the signal frequency transmitting by SAW filter then.
Summary of the invention
First aspect of the present disclosure provides a kind of surface acoustic wave (SAW) filter, and this SAW filter comprises: piezoelectric substrate; Plane barrier layer, is arranged on piezoelectric substrate top; And at least one metallic conductor, be arranged at least one groove in plane barrier layer.
Second aspect of the present disclosure provides a kind of method for the manufacture of surface acoustic wave (SAW) filter, and the method comprises: deposition plane barrier layer on piezoelectric substrate; Plane barrier layer is carried out to composition to form at least one groove; Depositing metal layers above plane barrier layer; And metal level is carried out to polishing to form at least one metallic conductor.
The third aspect of the present disclosure provides a kind of surface acoustic wave (SAW) filter, and this SAW filter comprises: piezoelectric substrate; SiO 2plane barrier layer, is arranged on piezoelectric substrate top; At least one Cu conductor, is buried in plane barrier layer and piezoelectric substrate; Diffusion barrier layer, is arranged on each top in described at least one Cu conductor; At least one Al conductor, is arranged on diffusion barrier layer top; And the 2nd SiO 2layer, is arranged on SiO 2plane barrier layer and described at least one Al conductor top.
The detailed description of open embodiments of the invention when carrying out below in conjunction with accompanying drawing, these and other aspects of the present invention, advantage and notable feature will become clear, and in the accompanying drawings, similar part refers to symbol appointment with similar in the drawings all the time.
Accompanying drawing explanation
By reading below in conjunction with accompanying drawing, to of the present invention, describe more specifically, above and other aspects, features and advantages of the present invention will better be understood.
Fig. 1-4 illustrate the embodiment of SAE filter construction and manufacturing process thereof.
Fig. 5-8 illustrate has the SAW filter construction of diffusion barrier and the embodiment of manufacturing process thereof.
Fig. 9-12 illustrate and comprise the SAW filter construction of protective layer and the embodiment of manufacturing process thereof.
Figure 13-16 illustrate has the SAW filter construction of multilayer electrode and the embodiment of manufacturing process thereof.
Figure 17-20 illustrate has the SAW filter construction of multilayer electrode and diffusion barrier and the embodiment of manufacturing process thereof.
Figure 21-25 illustrate to be had from aliging the SAW filter construction of multilayer electrode and the embodiment of manufacturing process thereof.
Accompanying drawing may not be drawn in proportion.Accompanying drawing only schematically shows, but not intention is described special parameter of the present invention.Accompanying drawing is only intended to describe exemplary embodiments of the present invention, therefore, should not be considered to limit the scope of the invention.In the accompanying drawings, similar numbering represents similar element.
Embodiment
As already pointed out, Fig. 1-2 5 illustrates the various embodiment of SAW filter 100 and manufacturing process thereof.
With reference to accompanying drawing, an embodiment of SAW filter 100 and manufacturing process thereof is described in Fig. 1-4.As shown in Figure 1, except other piezoelectric substrates, provide and can comprise lithium niobate (LiNbO 3) piezoelectric substrate 110.Plane barrier layer 120 is arranged on piezoelectric substrate 110 tops.In various embodiments, plane barrier layer 120 can be SiO 2, and can there is the thickness of about 100nm.Can be by using for example chemical etching to carry out composition to plane barrier layer 120, to form at least one groove 125 in plane barrier layer 120.
As shown in Figure 2, metal level 130 is deposited on plane barrier layer 120 and piezoelectric substrate 110 tops.In an embodiment, metal level 130 can be copper (Cu), and can deposit by for example physical vapour deposition (PVD) (PCD).In Fig. 3, can be by using for example chemico-mechanical polishing (CMP) to carry out polishing to form at least one metallic conductor 132 to metal level 130.During polishing, barrier layer 120 serves as the polishing stop layer of protecting piezoelectric substrate 110.In Fig. 4, SiO 2layer 135 can be deposited on plane barrier layer 120 and metallic conductor 130 tops.
Another embodiment of SAW filter 100 has been described in Fig. 5-8.As shown in Figure 5, as discussed with respect to FIG. 1, plane barrier layer 120 is deposited on piezoelectric substrate 110 tops, and patterned to form groove 125.As shown in Figure 6, by for example PVD, make lining or diffusion barrier layer 140 be deposited on plane barrier layer 120 and piezoelectric substrate 110 tops.The composition of diffusion barrier layer 140 can be any in TaN/Ta, TaSiN/Ta, WN/Ta, WN/Ru or another kind of composition.As shown in Figure 6, metal level 130 can be deposited on diffusion barrier layer 140 tops.In Fig. 7, can for example by CMP, to diffusion barrier layer 140 and metal level 130, carry out polishing to form at least one metallic conductor 132 by diffusion barrier layer 140 pads.As shown in Figure 7, the vertical surface 144,146 of horizontal surface 141 below of diffusion barrier layer 140 pad metallic conductors 132 and metallic conductor 132 both.In Fig. 8, SiO 2layer 135 can be deposited on plane barrier layer 120, metallic conductor 132 and diffusion barrier layer 140 tops.
Fig. 9-12 illustrate another embodiment of SAW filter 100.As shown in Figure 9, plane barrier layer 120 is deposited on piezoelectric substrate 110 tops, and patterned to form groove 125 as discussed above.Plane barrier layer 120 can be SiO 2, and can there is the thickness of about 200nm.By for example PVD, make metal level 130 be deposited on plane barrier layer 120 and piezoelectric substrate 110 tops.Then can make protective layer 150(by PVD or plasma enhanced chemical vapor deposition (PECVD) can be SiN for example) be deposited on metal level 130 tops.As shown in figure 10, can for example utilize plane barrier layer 120, as the CMP of polishing stop layer, metal level 130 and protective layer 150 are carried out to polishing by using.
In an embodiment, metal level 130 can be deposited as the degree of depth 134 that makes the thickness 133 of metal level 130 be less than groove 125, that is, metal level 130 is the entire depth 134 of filling groove 125 not.In another embodiment; as shown in figure 10; metal level 130 and protective layer 150 can be deposited as the degree of depth 134 that makes the gross thickness 136 of metal level 130 and protective layer 150 also can be less than groove 125, that is, metal level 130 is not filled into the degree of depth 134 by groove 125 together with protective layer 150 yet.In such embodiments, can be by adjusting the deposition of metal level 130 rather than controlling by carry out polishing as in the embodiment of Fig. 3 and Fig. 7 the metallic conductor 132 that therefore metal level 130(caves in Figure 10-12) thickness 133.
In embodiment, can remove protective layer 150 by etching depicted in figure 11, but in other embodiments, can not remove it.As shown in figure 12, SiO 2layer 135 can be deposited on plane barrier layer 120, metallic conductor 132 and protective layer 150(if present, not shown in Figure 12) top.
Figure 13-16 illustrate another embodiment of SAW filter 100.As shown in figure 13, plane barrier layer 120 is deposited on piezoelectric substrate 110 tops, and patterned to form groove 125.In certain embodiments, plane barrier layer 120 can be SiO 2.By plated metal above filter construction 100 (can be copper) and by metal being carried out to polishing with plane barrier layer 120 as polishing stop layer, form metallic conductor 132.As shown in figure 13, metallic conductor 132 is so buried in piezoelectric substrate 110 and plane barrier layer 120.
As shown in figure 14, diffusion barrier layer 140 is deposited on metallic conductor 132 tops.Diffusion barrier layer 140 can be tantalum nitride (TaN) for example.The second metal level 160(can be aluminium (Al)) be then deposited on diffusion barrier layer 140 tops.Then by using, for example use plane barrier layer 120 with the reactive ion etching of protection piezoelectric substrate 110, the second metal level 160 to be carried out to etching as etch stop layer.As shown in Figure 14-16, the second metal level 160 can be self-aligning so that it substantially with diffusion barrier layer 140 horizontal alignments.In Figure 15, then can remove plane barrier layer 120 by etching, but in other embodiments, it can keep original position.Metallic conductor 132, diffusion barrier layer 140 and the common laminated metal electrode 170 that forms of the second metal level 160, laminated metal electrode 170 can provide the frequency-temperature coefficient of high bandwidth/electromagnetic coupled and about 0.1.In Figure 16, SiO 2layer 135 can be deposited on piezoelectric substrate 110, plane barrier layer 120(if present) and laminated metal electrode 170 tops.
Figure 17-20 illustrate another embodiment.As shown in figure 17, plane barrier layer 120 is deposited on piezoelectric substrate 110 tops, and patterned to form groove 125.In certain embodiments, plane barrier layer 120 can be SiO 2.By plated metal above filter construction 100 (can be copper) and by carrying out polishing as polishing stop layer with 110 pairs of metals of protection piezoelectric structure with plane barrier layer 120, form metallic conductor 132.As shown in figure 17, metallic conductor 132 is so buried in piezoelectric substrate 110 and plane barrier layer 120.Diffusion barrier layer 142 is being deposited on above metallic conductor 132 in aligned process, so that metallic conductor 132 and diffusion barrier layer 142 substantial horizontal alignment.Diffusion barrier layer 142 can be cobalt tungsten phosphate (CoWP) for example.
As shown in figure 18, the second metal level 160(can be aluminium (Al)) be then deposited on diffusion barrier layer 142 tops.Then by using, for example use plane barrier layer 120, as the reactive ion etching of etch stop layer, the second metal level 160 is carried out to etching.In Figure 19, then can remove plane barrier layer 120 by etching, but in other embodiments, it can keep original position.Metallic conductor 132, diffusion barrier 142 and the common laminated metal electrode 170 that forms of the second metal level 160, laminated metal electrode 170 can provide the frequency-temperature coefficient of high bandwidth/electromagnetic coupled and about 0.1.Depicted in figure 20 in embodiment, SiO 2layer 135 can be deposited on piezoelectric substrate 110, plane barrier layer 120(if present) and laminated metal electrode 170 tops.
Figure 21-24 illustrate another embodiment that comprises corrugated laminated metal electrode.As shown in figure 21, plane barrier layer 120(can be SiO 2) be deposited on piezoelectric substrate 110 tops, and groove 125 is by such composition as discussed above.Then by for example PVD, make metal level 130 be deposited on plane barrier layer 120 and groove 125 tops, deposit and spread barrier layer 140(can be TaN for example thereafter).Then as shown in figure 22, SAW filter 100 is carried out to polishing, to obtain metallic conductor 132, metallic conductor 132 comprises the horizontal surface 151 of pad groove 125 and vertical surface 164,166 both metal and the horizontal surface of pad metallic conductor 132 and the diffusion barrier of vertical surface.In certain embodiments, the recess etch that can carry out metal level 130 is to form depression conductor 132.
As shown in figure 23, then can deposit the second metal level 160(can be aluminium (Al)) and it is carried out to polishing, to form the stacked metal electrode 170 of alignment certainly with corrugated configuration.In an embodiment, the second metal level 160 can be deposited as thickness and is equal to or greater than by the thickness 175 of the groove 126 of liner.In such embodiments, the configuration of Figure 23 can realize by the second metal level 160 being polished to the degree of depth of hope.In another embodiment shown in Figure 24, as shown in figure 24, the second metal level 160 can be deposited as the degree of depth that makes the gross thickness of metallic conductor 132, diffusion barrier layer 140 and the second metal level 160 be less than or equal to groove 125.Therefore, can be by adjusting the deposition of the second metal level 160 rather than controlling the second metal level 160(and therefore laminated metal 170 by carrying out polishing) thickness, and in some embodiment as shown in figure 24, can further make this thickness depression.In certain embodiments, as shown in figure 25, can remove plane barrier layer 120.
The description of various embodiment of the present invention provides for illustrative purposes, but is not intended to exhaustive or is limited to the disclosed embodiments.In the situation that do not depart from the scope and spirit of described embodiment, many modifications and variations will be obvious for those of ordinary skill in the art.Term used herein is selected to explain best principle, the practical application of embodiment or the technological improvement of the technology that is better than finding on market, or makes those of ordinary skill in the art can understand embodiment disclosed herein.

Claims (20)

1. surface acoustic wave (SAW) filter, comprising:
Piezoelectric substrate;
Plane barrier layer, described plane barrier layer is arranged on piezoelectric substrate top; And
At least one metallic conductor, described at least one metallic conductor is arranged at least one groove in plane barrier layer.
2. SAW filter according to claim 1, wherein, described plane barrier layer comprises SiO 2.
3. SAW filter according to claim 1, wherein, described piezoelectric substrate comprises LiNbO 3.
4. SAW filter according to claim 1, also comprises the SiO that is arranged on described at least one metallic conductor and plane barrier layer top 2layer.
5. SAW filter according to claim 1, also comprises the diffusion barrier layer that is arranged on described at least one metallic conductor below.
6. SAW filter according to claim 5, wherein, described diffusion barrier layer comprises one of TaN/Ta, TaSiN/Ta, WN/Ta and WN/Ru.
7. SAW filter according to claim 1, wherein, each in described at least one metallic conductor further comprises laminated conductor, described laminated conductor comprises:
Diffusion barrier layer, described diffusion barrier layer is arranged on each the metallic conductor top in described at least one metallic conductor; And
Al layer, described Al layer is arranged on diffusion barrier layer top,
Wherein, described Al layer substantially with diffusion barrier layer horizontal alignment, and
Wherein, described at least one metallic conductor comprises Cu, and is buried in piezoelectric substrate and plane barrier layer.
8. SAW filter according to claim 1, wherein, each in described at least one metallic conductor further comprises laminated conductor, described laminated conductor comprises:
Diffusion barrier layer, described diffusion barrier layer is arranged on each top in described at least one metallic conductor; And
Al layer, described Al layer is arranged on diffusion barrier layer top,
Wherein, described metallic conductor substantially with diffusion barrier layer horizontal alignment, and
Wherein, described at least one metallic conductor comprises Cu, and is buried in piezoelectric substrate and plane barrier layer.
9. SAW filter according to claim 1, wherein, each in described at least one metallic conductor further comprises the laminated conductor of corrugated configuration, described laminated conductor comprises:
Diffusion barrier layer, described diffusion barrier layer is arranged on described at least one metallic conductor top; And
Al layer, described Al layer is arranged on diffusion barrier layer top,
Wherein, metallic conductor, diffusion barrier layer and Al layer be alignment certainly, and
Wherein, described at least one metallic conductor comprises Cu, and is buried in piezoelectric substrate and plane barrier layer.
10. for the manufacture of a method for surface acoustic wave (SAW) filter, described method comprises:
Deposition plane barrier layer on piezoelectric substrate;
Plane barrier layer is carried out to composition to form at least one groove;
Depositing metal layers above plane barrier layer; And
Metal level is carried out to polishing to form at least one metallic conductor.
11. methods according to claim 10, are also included in plane barrier layer and described at least one metallic conductor top deposition SiO 2layer.
12. methods according to claim 10, also comprise:
After plane barrier layer is carried out to composition, deposit and spread barrier layer,
Wherein, described diffusion barrier layer comprises one of TaN/Ta, TaSiN/Ta, WN/Ta and WN/Ru, and
Wherein, described polishing also comprises diffusion barrier layer is carried out to polishing.
13. methods according to claim 10, also comprise:
After plane barrier layer is carried out to composition, deposition SiN protective layer,
Wherein, described polishing also comprises carries out polishing to SiN protective layer, and
Wherein, the thickness of described at least one metallic conductor is by deposited gold metallometry control.
14. methods according to claim 10, wherein, described metal level comprises copper (Cu), and wherein, described method also comprises:
Above described at least one metallic conductor, deposit TaN diffusion barrier layer;
Depositing Al conductor layer above TaN diffusion barrier layer; And
Use reactive ion etching to carry out composition to form at least one laminated conductor to TaN diffusion barrier layer and Al conductor layer, wherein, Al conductor layer aligns certainly with TaN diffusion barrier layer.
15. methods according to claim 10,
Wherein, described metal level comprises Cu, and
Wherein, described method also comprises:
Above described at least one metallic conductor, deposit CoWP diffusion barrier layer;
Depositing Al conductor layer above CoWP diffusion barrier layer; And
Use reactive ion etching to carry out composition to form at least one laminated conductor to CoWP diffusion barrier layer and Al conductor layer, wherein, Cu conductor aligns certainly with CoWP diffusion barrier layer.
16. methods according to claim 10,
Wherein, described metal level comprises Cu, and
Wherein, described method also comprises:
Above plane barrier layer, after depositing metal layers, above metal level, deposit TaN diffusion barrier layer;
TaN diffusion barrier layer and metal level are carried out to polishing to form at least one groove;
Depositing Al in described at least one groove; And
Described Al is carried out to polishing to form at least one from aliging corrugated laminated metal conductor.
17. methods according to claim 16, also comprise from piezoelectric substrate and remove plane barrier layer.
18. methods according to claim 16, wherein, the thickness of described Al is by deposited gold metallometry control.
19. methods according to claim 10, wherein, described plane barrier layer comprises SiO 2.
20. 1 kinds of surface acoustic waves (SAW) filter, comprising:
Piezoelectric substrate;
The one SiO 2plane barrier layer, a described SiO 2plane barrier layer is arranged on piezoelectric substrate top;
At least one Cu conductor, described at least one Cu conductor is buried in plane barrier layer and piezoelectric substrate;
Diffusion barrier layer, described diffusion barrier layer is arranged on each top in described at least one Cu conductor;
At least one Al conductor, described at least one Al conductor is arranged on diffusion barrier layer top; And
The 2nd SiO 2layer, described the 2nd SiO 2layer is arranged on a SiO 2plane barrier layer and described at least one Al conductor top.
CN201280035023.5A 2011-07-15 2012-06-29 There is SAW wave filter and the manufacture method thereof of plane barrier layer Expired - Fee Related CN103650344B (en)

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US13/183,977 2011-07-15
US13/183,977 US8723392B2 (en) 2011-07-15 2011-07-15 Saw filter having planar barrier layer and method of making
PCT/US2012/044908 WO2013012544A1 (en) 2011-07-15 2012-06-29 Saw filter having planar barrier layer and method of making

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US8723392B2 (en) 2014-05-13
DE112012002979B4 (en) 2017-12-28

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