CN103650109B - 使用基于模型的控制来处理基板的方法和设备 - Google Patents

使用基于模型的控制来处理基板的方法和设备 Download PDF

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Publication number
CN103650109B
CN103650109B CN201280033269.9A CN201280033269A CN103650109B CN 103650109 B CN103650109 B CN 103650109B CN 201280033269 A CN201280033269 A CN 201280033269A CN 103650109 B CN103650109 B CN 103650109B
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CN
China
Prior art keywords
pressure
discharge valve
volume
time
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280033269.9A
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English (en)
Chinese (zh)
Other versions
CN103650109A (zh
Inventor
基思·布赖恩·波特豪斯
约翰·W·莱恩
麻里乌斯·格雷戈尔
尼尔·玛丽
迈克尔·R·赖斯
亚历克斯·明科维奇
洪斌·李
德米特里·A·季利诺
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Applied Materials Inc
Original Assignee
Applied Materials Inc
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Publication of CN103650109A publication Critical patent/CN103650109A/zh
Application granted granted Critical
Publication of CN103650109B publication Critical patent/CN103650109B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B17/00—Systems involving the use of models or simulators of said systems
    • G05B17/02—Systems involving the use of models or simulators of said systems electric
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • G05D16/2006—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means
    • G05D16/2013—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means
    • G05D16/2026—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means
    • G05D16/2046—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means the plurality of throttling means being arranged for the control of a single pressure from a plurality of converging pressures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Control Of Fluid Pressure (AREA)
CN201280033269.9A 2011-07-15 2012-07-12 使用基于模型的控制来处理基板的方法和设备 Expired - Fee Related CN103650109B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/183,520 2011-07-15
US13/183,520 US8880210B2 (en) 2011-07-15 2011-07-15 Methods and apparatus for processing substrates using model-based control
PCT/US2012/046452 WO2013012675A2 (en) 2011-07-15 2012-07-12 Methods and apparatus for processing substrates using model-based control

Publications (2)

Publication Number Publication Date
CN103650109A CN103650109A (zh) 2014-03-19
CN103650109B true CN103650109B (zh) 2016-11-09

Family

ID=47519368

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280033269.9A Expired - Fee Related CN103650109B (zh) 2011-07-15 2012-07-12 使用基于模型的控制来处理基板的方法和设备

Country Status (6)

Country Link
US (1) US8880210B2 (https=)
JP (1) JP5943999B2 (https=)
KR (1) KR101591748B1 (https=)
CN (1) CN103650109B (https=)
TW (1) TWI506670B (https=)
WO (1) WO2013012675A2 (https=)

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US7896967B2 (en) * 2006-02-06 2011-03-01 Tokyo Electron Limited Gas supply system, substrate processing apparatus and gas supply method
US20160253891A1 (en) * 2015-02-27 2016-09-01 Elwha Llc Device that determines that a subject may contact a sensed object and that warns of the potential contact
US10269601B2 (en) * 2015-10-20 2019-04-23 Applied Materials, Inc. Chamber leak and gas contaimination detection
EP4269896A3 (en) * 2015-11-30 2024-01-24 Nextracker LLC Systems for and methods of automatically scheduling and executing in situ tests on electrical and mechanical systems
US9963779B2 (en) 2016-02-29 2018-05-08 Goodrich Corporation Methods for modifying pressure differential in a chemical vapor process
US10777394B2 (en) * 2016-12-09 2020-09-15 Applied Materials, Inc. Virtual sensor for chamber cleaning endpoint
CN108256262B (zh) * 2018-02-07 2021-03-26 武汉科技大学 一种轴对称射流稳压腔参数设计的数值模拟方法
CN113534855B (zh) * 2020-04-14 2023-07-21 长鑫存储技术有限公司 一种机台气路流量调整系统及方法
JP7602350B2 (ja) * 2020-11-11 2024-12-18 株式会社堀場エステック 濃度制御システム、濃度制御方法、及び、濃度制御システム用プログラム
US12183550B2 (en) * 2021-02-26 2024-12-31 Taiwan Semiconductor Manufacturing Company Limited Wafer treatment system and method of treating wafer
US11955322B2 (en) * 2021-06-25 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Device for adjusting position of chamber and plasma process chamber including the same for semiconductor manufacturing
US12523380B2 (en) * 2021-08-16 2026-01-13 Applied Materials, Inc. Prevention of contamination of substrates during pressure changes in processing systems
US12521775B2 (en) * 2021-08-30 2026-01-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device manufacturing system and method for manufacturing semiconductor device
US12278124B2 (en) * 2021-10-28 2025-04-15 Applied Materials, Inc. Model-based controlled load lock pumping scheme
US12130606B2 (en) * 2021-12-22 2024-10-29 Applied Materials, Inc. Disturbance compensation for substrate processing recipes
US20250140538A1 (en) * 2023-10-26 2025-05-01 Applied Materials, Inc. Model-driven pressure estimation
WO2026011385A1 (en) * 2024-07-11 2026-01-15 Applied Materials, Inc. Throttle valve position endpoint control within a deposition process
CN120060835A (zh) * 2025-04-28 2025-05-30 青岛思锐智能科技股份有限公司 一种原子层沉积反应腔室的气体压力控制系统、方法

Citations (5)

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JP2001257164A (ja) * 2000-03-10 2001-09-21 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び圧力制御方法
US6478923B1 (en) * 1999-08-20 2002-11-12 Nec Corporation Vacuum operation apparatus
US20060175012A1 (en) * 2005-02-07 2006-08-10 Beung-Keun Lee Semiconductor fabrication equipment and method for controlling pressure
US20080176412A1 (en) * 2007-01-22 2008-07-24 Elpida Memory, Inc. Atomic layer deposition system including a plurality of exhaust tubes
KR100874895B1 (ko) * 2007-12-26 2008-12-19 (주)넥클 반도체 소자 제조에 적합한 진공압력 제어장치

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US5772501A (en) * 1995-10-12 1998-06-30 Gas Research Institute Indoor environmental conditioning system and method for controlling the circulation of non-conditioned air
JP2942239B2 (ja) * 1997-05-23 1999-08-30 キヤノン株式会社 排気方法及び排気装置、それを用いたプラズマ処理方法及びプラズマ処理装置
JP2002091573A (ja) * 2000-09-19 2002-03-29 Toshiba Corp 圧力制御方法、処理装置および処理方法
US7437944B2 (en) * 2003-12-04 2008-10-21 Applied Materials, Inc. Method and apparatus for pressure and mix ratio control
US20050120805A1 (en) * 2003-12-04 2005-06-09 John Lane Method and apparatus for substrate temperature control
US7896967B2 (en) * 2006-02-06 2011-03-01 Tokyo Electron Limited Gas supply system, substrate processing apparatus and gas supply method
JP5050369B2 (ja) * 2006-03-06 2012-10-17 東京エレクトロン株式会社 処理装置
US8014887B2 (en) * 2006-03-22 2011-09-06 Hitachi Kokusai Electric Inc. Substrate processing apparatus
WO2010024036A1 (ja) * 2008-08-28 2010-03-04 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置のクリーニング方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6478923B1 (en) * 1999-08-20 2002-11-12 Nec Corporation Vacuum operation apparatus
JP2001257164A (ja) * 2000-03-10 2001-09-21 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び圧力制御方法
US20060175012A1 (en) * 2005-02-07 2006-08-10 Beung-Keun Lee Semiconductor fabrication equipment and method for controlling pressure
US20080176412A1 (en) * 2007-01-22 2008-07-24 Elpida Memory, Inc. Atomic layer deposition system including a plurality of exhaust tubes
KR100874895B1 (ko) * 2007-12-26 2008-12-19 (주)넥클 반도체 소자 제조에 적합한 진공압력 제어장치

Also Published As

Publication number Publication date
KR101591748B1 (ko) 2016-02-04
US20130018500A1 (en) 2013-01-17
TW201320148A (zh) 2013-05-16
WO2013012675A2 (en) 2013-01-24
JP2014527286A (ja) 2014-10-09
US8880210B2 (en) 2014-11-04
WO2013012675A3 (en) 2013-04-25
JP5943999B2 (ja) 2016-07-05
TWI506670B (zh) 2015-11-01
CN103650109A (zh) 2014-03-19
KR20140051949A (ko) 2014-05-02

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Granted publication date: 20161109

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