CN103646884A - Method for detecting metal-wire corrosion by production environment - Google Patents
Method for detecting metal-wire corrosion by production environment Download PDFInfo
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- CN103646884A CN103646884A CN201310554616.9A CN201310554616A CN103646884A CN 103646884 A CN103646884 A CN 103646884A CN 201310554616 A CN201310554616 A CN 201310554616A CN 103646884 A CN103646884 A CN 103646884A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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Abstract
The invention discloses a method for detecting metal-wire corrosion by a production environment. The method includes the following steps: providing a wafer and preparing an ion-trap combination structure on a scribe line of the wafer, wherein the ion-trap combination structure includes ion-trap structures of different kinds of device structures and a P trap and an N trap of the iron-trap structure of each device are connected with metal wires through contact holes above the P trap and the N trap; placing the wafer in which the iron-trap combination structure is prepared well in a normal production environment; and observing the electrochemical-corrosion condition of the metal wires of the iron-trap combination structure on the scribe line of the wafer through a microscope. Through the technical scheme, effects of the production environment on the corrosion of the metal wires can be detected faster so that corresponding improvement in actual production is facilitated and thus yield of the product is improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, relate in particular to a kind of method of production environment to metal connecting line corrosion that detect.
Background technology
Along with the continual progress of very lagre scale integrated circuit (VLSIC) production technology, in production process, environment is also increasing on the impact of device performance.Along with constantly reducing of integrated circuit live width, special in the interconnection process of back segment copper metal, just may there is the defect on electrochemical reaction generation metal as shown in Figure 1 within after chemico-mechanical polishing several hours in crystal column surface.Device architecture situation below the residing microenvironment of the generation of defect and crystal column surface and metal connecting line has direct correlation.And the detection for air particles and chemical analysis is to have ripe flow process and technology to monitor in the clean room producing at integrated circuit at present, but the monitoring for the residing microenvironment of crystal column surface is relatively short of, particularly in various different components structures metal connecting line for the electrochemical corrosion problem of production environment.When the technology of integrated circuit enters into 40nm when following, use due to a large amount of new materials, device architecture is also more and more higher to the requirement of microenvironment, and it is very short that a lot of technique finished to the time of staying between next step technique, for example the metal connecting line of back segment.Yet, the reaction of metal connecting line in environment be with its below device architecture time closely-related, how could well monitor and study this phenomenon and be the problem mainly solving of the present invention.
General device architecture as shown in Figure 2, metal connecting line 41, 42 respectively by contact hole 31, 32 are connected to source-drain electrode 21, on 22, source-drain electrode 21, 22 lay respectively on P trap and N trap, the existence of source-drain electrode can be played the electric leakage with the most substrate of isolated prevention of wafer substrate, so the speed of the electrochemical corrosion of metals occurring in this structure is more slowly, the more sensitive electrochemical reaction to a certain degree that may occur of some ratios will can not found by the method for the monitoring of production process, wait until possibly that final testing electrical property lost efficacy and could determine, but will cause like this massive losses of yield.
Chinese patent (publication number CN102706930A) provide a kind of by electrochemical method the transducer for varying environment Detection of metal corrosion, there is cylindrical housings, housing periphery is provided with support, below support, be provided with strong magnets, be also provided with the reference electrode of Ag/AgCl and the auxiliary electrode of ring stainless steel.When transducer is implemented to survey, the strong magnets of sensor base is adsorbed on tested metallic surface by whole transducer, is injected with solution medium in housing, and auxiliary electrode and solution medium and tested metal form galvanic circle.This invention manufacture craft is simple, and resistance to wear is good, adapts to long-time outdoor study, can carry out fast detecting to corrosion of metals situation in varying environment.
Chinese patent (publication number CN101876624A) provide metallic material corrosion rate measuring probe and using method thereof in a kind of checkout gear and method, particularly a kind of atmospheric environment.It comprises: pumping signal input, test piece pallet, a plurality of corrosion coupons, temperature-compensating test piece, pumping signal output and a plurality of response signal measuring junction.During detection, probe interface is connected with testing circuit, and corrosion coupon and compensation test piece are applied to same continuous current excitation signal; Obtain the exciter response signal at corrosion coupon and compensation test piece two ends, calculate the attenuate amount of corrosion coupon, according to above-mentioned attenuate amount, obtain corrosion of metal speed.This invention measure error is little, highly sensitive, and antijamming capability is strong, applied widely, can realize remote online and measure.
It is not identical that the technical scheme that above-mentioned two patents are taked and the present invention detect the detection method that production environment takes the method for metal connecting line corrosion.
Summary of the invention
Problem for above-mentioned existence, the present invention discloses a kind of method of production environment to metal connecting line corrosion that detect, to overcome in prior art because the electrochemical corrosion of metal connecting line in existing structure is slower, may there is electrochemical reaction to a certain degree and can not have been found by the method for the monitoring of production process in what have, wait until possibly that final testing electrical property lost efficacy and could determine, thereby can cause the problem of yield loss.
To achieve these goals, the present invention adopts following technical scheme:
Detect the method for production environment to metal connecting line corrosion, comprise the steps:
S1, one wafer is provided, on the Cutting Road of described wafer, prepares ion trap combining structure, wherein, described ion trap combining structure comprises the ion trap structure of various types of device architecture, in the ion trap structure of every kind of device P trap and N trap all by separately top contact hole connection metal line;
S2, is placed on the wafer for preparing described ion trap combining structure in normal production environment;
S3, the electrochemical corrosion situation of the metal connecting line by ion trap combining structure on wafer Cutting Road described in microscopic examination.
The method of above-mentioned detection production environment to metal connecting line corrosion, wherein, described step S1 is specially: a wafer is provided, P trap and the N trap of by single Implantation, on the Cutting Road of described wafer, preparing various types of device architecture, directly over the P of described various types of device architecture trap and N trap, form respectively contact hole, in each contact hole top, form respectively metal connecting line, contact hole directly over described P trap is communicated with metal connecting line and P trap, contact hole directly over described N trap is communicated with metal connecting line and N trap, the P trap of every kind of device architecture and N trap, and corresponding contact hole and metal connecting line form the ion trap structure of every kind of device architecture, the ion trap structure of various types of device architecture forms the ion trap combining structure on described wafer Cutting Road together.
The method of above-mentioned detection production environment to metal connecting line corrosion, wherein, in described ion trap combining structure, the ion trap structure of every kind of device architecture is along wafer Cutting Road vertical array.
The method of above-mentioned detection production environment to metal connecting line corrosion, wherein, in described ion trap combining structure, the ion trap structure of every kind of device architecture is transversely arranged along wafer Cutting Road.
The method of above-mentioned detection production environment to metal connecting line corrosion, wherein, the distance in the ion trap structure of every kind of device between metal connecting line is the minimum spacing between the metal connecting line that allows of wafer.
The method of above-mentioned detection production environment to metal connecting line corrosion, wherein, the spacing in described ion trap combining structure between adjacent ion trap structure is identical.
The method of above-mentioned detection production environment to metal connecting line corrosion, wherein, described step S3 is specially, and sets regular time interval, and timing is by the electrochemical corrosion situation of the metal connecting line of ion trap combining structure on wafer Cutting Road described in microscopic examination.
The method of above-mentioned detection production environment to metal connecting line corrosion, wherein, described metal connecting line is copper metal connecting line.
The method of above-mentioned detection production environment to metal connecting line corrosion, wherein, described microscope is electron microscope.
Foregoing invention tool has the following advantages or beneficial effect:
The present invention prepares ion trap combining structure on wafer Cutting Road, contact hole under metal connecting line directly connects P trap and the N trap of various types of device architecture, so that the electric leakage of aggravation device architecture makes metal wire more responsive to environment, to can detect sooner the impact of production environment on metal connecting line corrosion.
Concrete accompanying drawing explanation
By reading the detailed description of non-limiting example being done with reference to the following drawings, the present invention and feature thereof, profile and advantage will become more apparent.In whole accompanying drawings, identical mark is indicated identical part.Can proportionally not draw accompanying drawing, focus on illustrating purport of the present invention.
Fig. 1 is the structural representation that in background technology of the present invention, under electron microscope, copper lines generation is corroded;
The ion trap structure schematic diagram that in Fig. 2 background technology of the present invention, existing device architecture forms;
Fig. 3 is that the present invention detects the structural representation of production environment to the embodiment of the method one intermediate ion well structure of metal connecting line corrosion;
Fig. 4 the present invention detects the structural representation of production environment to the embodiment of the method one intermediate ion trap combining structure of metal connecting line corrosion;
Fig. 5 the present invention detects the structural representation of production environment to wafer and wafer Cutting Road in the embodiment of the method one of metal connecting line corrosion;
Fig. 6 the present invention detects production environment to there is the structural representation of the ion trap combining structure of electrochemical corrosion in the embodiment of the method one of metal connecting line corrosion.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment, the present invention is further illustrated, but not as limiting to the invention.
Embodiment mono-:
As shown in Fig. 3-Fig. 6, the present embodiment relates to a kind of method of production environment to metal connecting line corrosion that detect, and comprises the steps:
S1, one wafer is provided, on the Cutting Road of described wafer, prepare ion trap combining structure, described ion trap combining structure comprises various types of device architecture D1, D2 ... the ion trap structure of Dn, in the ion trap structure of every kind of device P trap and N trap all by separately top contact hole connection metal line.
S2, is placed on the described wafer for preparing ion trap combining structure in normal production environment.
S3, by various types of device architecture D1, D2 in ion trap combining structure on microscopic examination wafer Cutting Road ... the electrochemical corrosion situation of the metal connecting line of the ion trap structure of Dn.
Wherein, step S1 is specially: P trap 11 and the N trap 12 of by single Implantation, on the Cutting Road of wafer, preparing various types of device architecture, directly over the P of various types of device architecture trap 11 and N trap 12, form respectively contact hole 31, 32, in each contact hole top, form respectively metal connecting line 41, 42, the contact hole 31 of described P trap 11 tops is communicated with metal connecting line 41 and P trap 11, the contact hole 32 of described N trap 12 tops is communicated with metal connecting line 42 and N trap 12, the P trap of described every kind of device architecture and N trap, the contact hole corresponding with it and metal connecting line form the ion trap structure of every kind of device, various types of device architecture D1, D2 ... the ion trap structure of Dn forms the ion trap combining structure on described wafer Cutting Road together.
And various types of device architecture D1, D2 in the ion trap combining structure on described wafer Cutting Road ... the ion trap structure of Dn according to the direction of wafer Cutting Road along wafer Cutting Road transversely arranged or vertical array, narrow because of wafer Cutting Road, the ion trap structure of various types of device architecture is arranged along wafer Cutting Road can conserve space; Distance in the ion trap structure of described every kind of device between metal connecting line is the minimum spacing between the metal connecting line allowing on wafer, on the one hand can conserve space, conveniently carry out on the other hand the observation to the electrochemical corrosion situation of metal connecting line; Spacing in ion trap combining structure between adjacent ion trap structure is identical, the more convenient observation of carrying out the electrochemical corrosion situation of metal connecting line, as shown in Figure 4.
Described step S4 is specially, set regular time interval, regularly by various types of device architecture D1, D2 in ion trap combining structure on microscopic examination wafer Cutting Road ... the electrochemical corrosion situation of the metal connecting line of the ion trap structure of Dn, by timing, observe, can observe more timely the electrochemical corrosion situation of metal connecting line, and save human cost; Described metal connecting line is copper metal connecting line, and copper metal connecting line is current more conventional metal connecting line; Described microscope is electron microscope, and the electrochemical corrosion situation of electron microscope observation is more accurate.
After a period of time, the metal connecting line generation electrochemical corrosion of the device architecture D2 on wafer Cutting Road and the ion trap structure of device architecture D3, as shown in Figure 6, situation about occurring according to the ion trap structure metal connecting line generation electrochemical corrosion of device architecture D2 and device architecture D3 can know device architecture D2 and D3 higher to the requirement of production environment, also known the time of these two kinds of device architecture generation electrochemical corrosion, can analyze and improve accordingly in actual production according to these detection case simultaneously.
From the present embodiment, on wafer Cutting Road, prepare ion trap combining structure, contact hole in ion trap combining structure under metal connecting line is directly connected on the P trap or N trap of various types of device architecture, the electric leakage of aggravation device architecture makes metal connecting line more responsive to environment, thereby can detect very soon the impact of production environment on metal connecting line corrosion, to improve accordingly in actual production, thus the yield of raising product.
It should be appreciated by those skilled in the art that those skilled in the art, realizing described variation example in conjunction with prior art and above-described embodiment, do not repeat at this.Such variation example does not affect flesh and blood of the present invention, does not repeat them here.
Above preferred embodiment of the present invention is described.It will be appreciated that, the present invention is not limited to above-mentioned specific implementations, and the equipment of wherein not describing in detail to the greatest extent and structure are construed as with the common mode in this area to be implemented; Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or being revised as the equivalent embodiment of equivalent variations, this does not affect flesh and blood of the present invention.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (9)
1. detect the method for production environment to metal connecting line corrosion, it is characterized in that, comprise the steps:
S1, one wafer is provided, on the Cutting Road of described wafer, prepares ion trap combining structure, wherein, described ion trap combining structure comprises the ion trap structure of various types of device architecture, in the ion trap structure of every kind of device P trap and N trap all by separately top contact hole connection metal line;
S2, is placed on the wafer for preparing described ion trap combining structure in normal production environment;
S3, the electrochemical corrosion situation of the metal connecting line by ion trap combining structure on wafer Cutting Road described in microscopic examination.
2. the method that detection production environment as claimed in claim 1 is corroded metal connecting line, it is characterized in that, described step S1 is specially: a wafer is provided, P trap and the N trap of by single Implantation, on the Cutting Road of described wafer, preparing various types of device architecture, directly over the P of described various types of device architecture trap and N trap, form respectively contact hole, in each contact hole top, form respectively metal connecting line, contact hole directly over described P trap is communicated with metal connecting line and P trap, contact hole directly over described N trap is communicated with metal connecting line and N trap, the P trap of every kind of device architecture and N trap, and corresponding contact hole and metal connecting line form the ion trap structure of every kind of device architecture, the ion trap structure of various types of device architecture forms the ion trap combining structure on described wafer Cutting Road together.
3. the method for detection production environment as claimed in claim 2 to metal connecting line corrosion, is characterized in that, in described ion trap combining structure, the ion trap structure of every kind of device architecture is along wafer Cutting Road vertical array.
4. the method for detection production environment as claimed in claim 2 to metal connecting line corrosion, is characterized in that, in described ion trap combining structure, the ion trap structure of every kind of device architecture is transversely arranged along wafer Cutting Road.
5. the method for the detection production environment as described in claim 3 or 4 any one to metal connecting line corrosion, is characterized in that, the distance in the ion trap structure of every kind of device between metal connecting line is the minimum spacing between the metal connecting line that allows of wafer.
6. the method for the detection production environment as described in claim 3 or 4 any one to metal connecting line corrosion, is characterized in that, the spacing in described ion trap combining structure between adjacent ion trap structure is identical.
7. the method that detection production environment as claimed in claim 1 is corroded metal connecting line, it is characterized in that, described step S3 is specially, and sets regular time interval, and timing is by the electrochemical corrosion situation of the metal connecting line of ion trap combining structure on wafer Cutting Road described in microscopic examination.
8. the method for detection production environment as claimed in claim 1 to metal connecting line corrosion, is characterized in that, described metal connecting line is copper metal connecting line.
9. the method for detection production environment as claimed in claim 1 to metal connecting line corrosion, is characterized in that, described microscope is electron microscope.
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| CN201310554616.9A CN103646884B (en) | 2013-11-08 | 2013-11-08 | Detect the method that production environment is corroded metal connecting line |
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| CN201310554616.9A CN103646884B (en) | 2013-11-08 | 2013-11-08 | Detect the method that production environment is corroded metal connecting line |
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| CN103646884B CN103646884B (en) | 2016-04-27 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1197499A (en) * | 1997-09-19 | 1999-04-09 | Nec Corp | Semiconductor device |
| CN101876624A (en) * | 2010-06-25 | 2010-11-03 | 钢铁研究总院青岛海洋腐蚀研究所 | Metal corrosion rate measuring probe and method in atmospheric environment |
| CN102044424A (en) * | 2009-10-14 | 2011-05-04 | 三星电子株式会社 | Semiconductor device including metal silicide layer and method for manufacturing the same |
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- 2013-11-08 CN CN201310554616.9A patent/CN103646884B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1197499A (en) * | 1997-09-19 | 1999-04-09 | Nec Corp | Semiconductor device |
| CN102044424A (en) * | 2009-10-14 | 2011-05-04 | 三星电子株式会社 | Semiconductor device including metal silicide layer and method for manufacturing the same |
| CN101876624A (en) * | 2010-06-25 | 2010-11-03 | 钢铁研究总院青岛海洋腐蚀研究所 | Metal corrosion rate measuring probe and method in atmospheric environment |
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