CN103645373B - A kind of method of monitoring dark current - Google Patents
A kind of method of monitoring dark current Download PDFInfo
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- CN103645373B CN103645373B CN201310741960.9A CN201310741960A CN103645373B CN 103645373 B CN103645373 B CN 103645373B CN 201310741960 A CN201310741960 A CN 201310741960A CN 103645373 B CN103645373 B CN 103645373B
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- dark current
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Abstract
The invention provides a kind of method of monitoring dark current, it is characterized in that: on solar battery sheet, add reversed bias voltage, reversed bias voltage produces electricity to solar battery sheet and injects, and inspires nonequilibrium carrier, forms dark current; Dark current is made up of reverse saturation current J1, thin layer leakage current J2 and body leakage current J3, and dark current raises with the rising of reversed bias voltage and is divided into 3 districts, and 1st district, 2nd district, 3 district's dark current play dominating role by J2, J3, J1 respectively. Method provided by the invention has overcome the deficiencies in the prior art, by the monitoring to solar battery sheet dark current, observe the problem of the solar cell blade technolgy that may occur, can reduction process investigate scope and reduce the poor efficiency causing because of electric leakage, increase the qualification rate of solar battery sheet electrical property.
Description
Technical field
The present invention relates to a kind of method of monitoring dark current, especially relate to a kind of solar cell detection of electrical leakage sideMethod, belongs to technical field of solar batteries.
Background technology
At present, cell piece, after printing, need to carry out diffusion technique, and diffusion technique relates to the formation of PN junction,Under the condition that there is no illumination, add reversed bias voltage (N district just connects, and P district connects negative) to PN junction, now have anti-To electric current produce, Here it is so-called dark current, dark current is exactly reverse saturation current in fact, but to tooSun energy cell piece, dark current not only comprises reverse saturation current, also comprises thin layer leakage current and body drain electricityStream.
Solar battery sheet can divide 3 layers, i.e. thin layer (being N district), depletion layer (being PN junction) and tagma(being P district). For cell piece, be to have some harmful impurity and defect all the time, some is silicon chip basisBody just has, and also has plenty of to form in our technique, and the impurity that these are harmful and defect can play compoundThe effect at center, can capture hole and electronics, makes them compound, and compound process is accompanied by carrier all the timeDisplacement, must have small electric current and produce, the value of the dark current of these electric currents to test gained is to haveContribution, the part of being contributed by thin layer is referred to as thin layer leakage current, and the part of being contributed by tagma is referred to as body drain electricityStream. And electric leakage can reduce the actual measuring current of BERGER tester, and then cause poor efficiency. Therefore to dark electricityThe monitoring of stream is very important.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of method of monitoring dark current, to dwindle solar cellThe poor efficiency that blade technolgy problem investigation scope and reduction cause because of electric leakage, increases closing of solar battery sheet electrical propertyLattice rate.
In order to solve the problems of the technologies described above, technical scheme of the present invention is to provide a kind of method of monitoring dark current,It is characterized in that: on solar battery sheet, add reversed bias voltage, reversed bias voltage produces electricity to solar battery sheetInject, electricity injects and inspires nonequilibrium carrier, and the nonequilibrium carrier that reversed bias voltage excites is more greatly more, shapeThe dark current becoming is larger, and the growth rate of dark current is slack-off with reversed bias voltage increase;
Dark current is made up of reverse saturation current J1, thin layer leakage current J2 and body leakage current J3, dark current withThe rising of reversed bias voltage and raise and be divided into 3 districts, the separation magnitude of voltage in 1st district, 2nd district is 8V, 2nd district,The separation magnitude of voltage in 3rd district is 12V; 1 district's dark current plays dominating role by thin layer leakage current J2, and 2nd district are electricity secretlyStream plays dominating role by body leakage current J3, and 3 district's dark current play dominating role by reverse saturation current J1;
If 1 district's dark current is greater than 1A, illustrate that the thin layer district of solar battery sheet is out of joint; If 2District's dark current is greater than 10A, describes the problem out the tagma at solar battery sheet; If 3 district's dark current are greater thanThe PN junction of 2A explanation solar battery sheet has problem.
Method provided by the invention has overcome the deficiencies in the prior art, by the prison to solar battery sheet dark currentSurvey, the problem of observing the solar cell blade technolgy that may occur, can reduction process investigation scope and reductionBecause of the poor efficiency that electric leakage causes, increase the qualification rate of solar battery sheet electrical property.
Brief description of the drawings
Fig. 1 is the different cell piece change curve schematic diagram with the increase leakage current of backward voltage.
Detailed description of the invention
For the present invention is become apparent, hereby with a preferred embodiment, and be described in detail below by reference to the accompanying drawings.
The method of monitoring dark current is to utilize electricity to inject excitation principle to monitor the region that dark current occurs. At cell pieceOn add voltage, make it produce electric injection to cell piece, and electricity injects and inspires nonequilibrium carrier, voltageThe nonequilibrium carrier exciting is more greatly more, and the dark current of formation is larger, and the growth rate of dark current increases with voltageLarge and slack-off, until slice, thin piece is breakdown, as shown in Figure 1.
First, cell piece is put into German BERGERIV measuring system, and the voltage of test dark current is adjustedWhole is normal voltage 12V, starts after testing button, and German BERGERIV measuring system is passed through current/voltageSoftware for calculation provides current/voltage IV and dark current curve resolution chart, can find out the basic condition of cell piece.
Further, dark current is made up of reverse saturation current and thin layer leakage current and body leakage current, respectivelyRepresent with J1, J2, J3, in the time that we add reversed bias voltage to cell piece, dark current rises with the rising of voltageHeight, point 3 districts, 1 district's dark current plays dominating role by J2, and dominating role plays by J3 in 2nd district, and 3rd district are by J1Play dominating role, the separation in 3 districts is determined by the test voltage of separation, the boundary in 1st district, 2nd districtPoint voltage value is 8V, and the separation magnitude of voltage in 2nd district, 3rd district is 12V, respectively voltage is adjusted into separationMagnitude of voltage 8V, 12V, can obtain different electric leakage size and solar cell current/voltage IV curve.
2 separation voltages are set simultaneously, and corresponding 2 places leakage current test, obtains current/voltage IV test bentLine, by contrasting the size of two leakage currents and analyzing the generation district that IV test curve can be learnt dark currentTerritory, as found in 1st district, dark current is crossed is greater than 1A, illustrates that corresponding thin layer district is out of joint; 2nd district are electricity secretlyStream is greater than 10A, describes the problem out in tagma; Same 3 district's dark current are greater than 2A, and having that PN junction does is describedProblem, as the parameters such as diffusion, serigraphy, temperature all can affect dark current, and then reduction process investigation scopeWith reduction poor efficiency ratio, increase the qualification rate of electrical property.
Claims (1)
1. a method of monitoring dark current, is characterized in that:
On solar battery sheet, add reversed bias voltage, reversed bias voltage produces electricity to solar battery sheet and injects, and electricity injects and inspires nonequilibrium carrier, and the nonequilibrium carrier that reversed bias voltage excites is more greatly more, the dark current forming is larger, and the growth rate of dark current is slack-off with reversed bias voltage increase;
Dark current is made up of reverse saturation current J1, thin layer leakage current J2 and body leakage current J3, and dark current raises with the rising of reversed bias voltage and is divided into 3 districts, and the separation magnitude of voltage in 1st district, 2nd district is 8V, and the separation magnitude of voltage in 2nd district, 3rd district is 12V; 1 district's dark current plays dominating role by thin layer leakage current J2, and 2 district's dark current play dominating role by body leakage current J3, and 3 district's dark current play dominating role by reverse saturation current J1;
If 1 district's dark current is greater than 1A, illustrate that the thin layer district of solar battery sheet is out of joint; If 2 district's dark current are greater than 10A, describe the problem out the tagma at solar battery sheet; If 3 district's dark current are greater than 2A, illustrate that the PN junction of solar battery sheet has problem.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310741960.9A CN103645373B (en) | 2013-12-27 | 2013-12-27 | A kind of method of monitoring dark current |
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| CN201310741960.9A CN103645373B (en) | 2013-12-27 | 2013-12-27 | A kind of method of monitoring dark current |
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| CN103645373A CN103645373A (en) | 2014-03-19 |
| CN103645373B true CN103645373B (en) | 2016-05-11 |
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| CN104065340A (en) * | 2014-07-14 | 2014-09-24 | 陕西众森电能科技有限公司 | Solar battery piece detection system and measuring method thereof |
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| CN100561190C (en) * | 2006-09-15 | 2009-11-18 | 深圳迈瑞生物医疗电子股份有限公司 | Dark current detection device and absorbency detection method |
| CN102236039A (en) * | 2010-04-27 | 2011-11-09 | 上海永创医疗器械有限公司 | Dark current detection method |
| CN102156135A (en) * | 2010-12-06 | 2011-08-17 | 长春理工大学 | Measuring method and device of laser damaged silicon-based detector |
| CN102509748A (en) * | 2011-11-30 | 2012-06-20 | 合肥晶澳太阳能科技有限公司 | Diffusion technology for reducing dark current of metallurgical silicon solar battery |
| CN203310896U (en) * | 2013-05-03 | 2013-11-27 | 阿特斯(中国)投资有限公司 | Solar energy cell sheet reverse leakage current detection device |
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