CN103633219A - Light-emitting diode element - Google Patents

Light-emitting diode element Download PDF

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Publication number
CN103633219A
CN103633219A CN201210309925.5A CN201210309925A CN103633219A CN 103633219 A CN103633219 A CN 103633219A CN 201210309925 A CN201210309925 A CN 201210309925A CN 103633219 A CN103633219 A CN 103633219A
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led wafer
semiconductor layer
type semiconductor
layer
sapphire substrate
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李学旻
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Individual
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2924/1204—Optical Diode
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Abstract

A light-emitting diode element comprises the following components of: a light-emitting diode chip which includes a sapphire substrate, a first type semiconductor layer located on the substrate, a second type semiconductor layer located on the first type semiconductor layer, a first conductive hole penetrating the sapphire substrate and the first type semiconductor layer, a second conductive hole penetrating the sapphire substrate and an insulating layer formed on the hole wall of the first conductive hole; a conductor-made transparent conductive layer which is formed on the second type semiconductor layer; a covering layer which is formed on the transparent conductive layer; electric conductors formed in each conductive hole, wherein the electric conductor in the first conductive hole is electrically connected with the second type semiconductor layer, and the electric conductor in the second conductive hole is electrically connected with the first type semiconductor layer; and two external circuit connecting bodies which are formed on a surface of the sapphire substrate which is opposite to the semiconductor layers.

Description

Light-emitting diode
Technical field
The present invention relates to a kind of light-emitting diode.
Background technology
In lighting field, light-emitting diode (LED) has become the synonym of carbon reduction.Yet the structure of current light-emitting diode all has the problem of the P utmost point and the shading of the N utmost point, cause the light of light-emitting diode transmitting effectively to utilize, and then affect luminous efficiency.
Also event therefore, this case is to provide a kind of completely different with day structure of the white light LEDs that Asia is chemical and can overcome the white-light LED structure of its shortcoming.
Summary of the invention
According to a feature of the present invention, a kind of light-emitting diode is provided, this light-emitting diode comprises: a LED wafer, and this LED wafer comprises that a sapphire substrate, is positioned at the first type semiconductor layer, on this base material and is positioned at the insulating barrier on the hole wall that the second conductive hole and that the first conductive hole, that Second-Type semiconductor layer, in this first type semiconductor layer runs through this sapphire substrate and this first type semiconductor layer runs through this sapphire substrate is formed at this first conductive hole; One transparency conducting layer of being made by conductor, this transparency conducting layer is formed on this Second-Type semiconductor layer; One is formed at the cover layer on this transparency conducting layer; Be formed at the electric conductor in each conductive hole, the electric conductor in the first conductive hole is and the electrical connection of this Second-Type semiconductor layer, and electric conductor in the second conductive hole is and this first type semiconductor layer electrical connection; And two lip-deep external circuit connectors relative with these semiconductor layers that are formed on this sapphire substrate.
Accompanying drawing explanation
Fig. 1 is the schematic sectional view of describing the light-emitting diode of the present invention's the first preferred embodiment;
Fig. 2 is the schematic diagram of describing by the formed optical channel of multi-layer transparent optical waveguide layer using in this first embodiment;
Fig. 3 is the schematic sectional view of describing the light-emitting diode of the present invention's the second preferred embodiment;
Fig. 4 to Fig. 7 is the schematic flow diagram of describing the manufacturing process of light-emitting diode of the present invention;
Fig. 8 is the schematic sectional view of describing the light-emitting diode of the present invention's the 3rd preferred embodiment;
Fig. 9 is the schematic sectional view of describing the light-emitting diode of the present invention's the 4th preferred embodiment;
Figure 10 is the schematic sectional view of describing the light-emitting diode of the present invention's the 5th preferred embodiment;
Figure 11 is the schematic sectional view of describing the light-emitting diode of the present invention's the 6th preferred embodiment;
Figure 12 is the schematic sectional view of describing the light-emitting diode of the present invention's the 7th preferred embodiment;
Figure 13 is the schematic sectional view of describing the light-emitting diode of the present invention's the 8th preferred embodiment; And
Figure 14 is the schematic sectional view of describing the light-emitting diode of the present invention's the 9th preferred embodiment.
[main element symbol description]
1 LED wafer
2 first LED wafers
3 second LED wafers
4 the 3rd LED wafers
5 substrates
The 6 outside electric conductors that connect
6 ' wire
7 installation base plates
70 first surfaces
71 circuit trace
8 second installation base plates
80 first surfaces
81 circuit trace
10 sapphire substrates
11 first type semiconductor layer
12 Second-Type semiconductor layers
13 first conductive holes
130 insulating barriers
14 second conductive holes
15 conductive layers
16 transparency conducting layers
17 cover layers
18 external circuit connectors
180 first conductive layers
181 conductive reflective
182 second conductive layers
183 the 3rd conductive layers
19 optical waveguide layers
20 conducting islands
21 through holes
210 insulating barriers
220 insulating barriers
22 perforations
23 electric conducting materials
24 perforations
240 insulating barriers
25 conductive traces
31 n type semiconductor layers
310 N-type electrodes
32 p type semiconductor layers
320 P type electrodes
41 n type semiconductor layers
410 N-type electrodes
42 p type semiconductor layers
420 P type electrodes
50 first install surface
51 second surfaces
52 conductive traces
W LED wafer
L line of cut
L0 groove 10
Embodiment
In the detailed description of preferred embodiment of the present invention below, same or similar element is to be indicated by identical label, and their detailed description will be omitted.In addition,, for clear announcement feature of the present invention, the element in graphic is not described by actual ratio.
Fig. 1 is the schematic sectional view of the light-emitting diode of the present invention's the first preferred embodiment.
Shown in Fig. 1, the light-emitting diode of the first embodiment of the present invention comprises a LED wafer 1.This LED wafer 1 comprises that a sapphire substrate 10, one are positioned at the first type semiconductor layer 11 and the Second-Type semiconductor layer 12 being positioned in this first type semiconductor layer 11 on this base material 10.In the present embodiment, this first type semiconductor layer 11 is n type semiconductor layers and this Second-Type semiconductor layer 12 is p type semiconductor layers.By the dry ecthing procedure or the laser perforation processing procedure that utilize induction coupled plasma (ICP), each light-emitting diode 1 is formed with the first conductive hole 13 and second conductive hole 14 that runs through sapphire substrate 10 that run through sapphire substrate 10, n type semiconductor layer 11 and p type semiconductor layer 12.On the hole wall of this first conductive hole 13, be formed with an insulating barrier 130.This insulating barrier 130 can be to be made by silicon dioxide or polyimides.Certainly, this insulating barrier 130 can be also to be formed by other applicable materials.
In the present embodiment, the thickness of this sapphire substrate 10 be 10 μ m between 50 μ m for better.Certainly, the thickness of this sapphire substrate 10 can be also outside above-described scope.
A transparency conducting layer of being made by electroconductive ITO 16 is formed on this p type semiconductor layer 12.One similarly to be silicon dioxide (SiO 2) cover layer 17 that forms is formed on this transparency conducting layer 16 to prevent this transparency conducting layer 16 oxidations.Certainly, conductive layer 16 also can be formed by other applicable materials with cover layer 17.
In each conductive hole 13,14, be formed with an electric conductor 15.Electric conductor in this conductive hole 13 15 and transparency conducting layer 16 electrical connections on this p type semiconductor layer 12, and electric conductor 15 and this n type semiconductor layer 11 electrical connections in conductive hole 14.
Two external circuit connectors 18 are formed on the surface relative with these semiconductor layers 11,12 of this sapphire substrate 10.These external circuit connectors 18 and 15 electrical connections of corresponding electric conductor and respectively comprise on a surface that is positioned at this sapphire substrate 10 and be formed at conductive reflective on this first conductive layer 180 181, one with the first conductive layer 180 of corresponding electric conductor 15 electrical connections, one and be formed at the second conductive layer 182 and the 3rd conductive layer 183 being formed on this second conductive layer 182 on this reflector 181.
In the present embodiment, this first conductive layer 180 can be to be made by ITO, and this reflector 181 can be to be made by any applicable electric conducting material, and this second conductive layer 182 can be a nickel/gold layer, and the 3rd conductive layer 183 can be a projection.Certainly, the structure of this external circuit connector 18 and the material that forms these conductive layers 180,181,182,183 are not defined so, as long as can make electric conductor 15 and the electrical connection of external circuit (not shown).
In the time of should being noted that the reduced down in thickness when sapphire substrate 10, can cause the problem of easy sliver, yet externally, under the setting of circuit connecting body 18, the structural strength of whole light-emitting diode is kept, sliver can not occur and cause open circuit or short circuit.On the other hand, the thicker radiating effect that also can increase of the thickness of sapphire substrate 10 thickness thinner and external circuit connector 18 is further to solve the existing problem because of accumulated heat light decay of light-emitting diode.
Should be noted that this light-emitting diode more can comprise a multi-layer transparent optical waveguide layer 19 being formed on this cover layer 17.This multi-layer transparent optical waveguide layer 19 makes light-output only have a direction, therefore can promote irradiant brightness because concentrating.This multi-layer transparent optical waveguide layer 19 forms optical channel as shown in Figure 2.
The multilayer refractive index of this multi-layer transparent optical waveguide layer 19 can be as 2.2 ~ 2.3/2.3 ~ 2.4/2.2 ~ 2.3/2.3 ~ 2.4, similar to GAN or GAAS refractive index 2.4 ~ 2.5, makes the unidirectional refraction of blue light, in order to avoid cause secondary reflection.
In addition, the surperficial edge relative with these semiconductor layers 11,12 of the edge of these semiconductor layers 11,12 and this sapphire substrate 10 is shaped to a diamond leaded light limit, can increase more than 20% light emission rate.And so light-emitting diode can form 360 ° and cover the light of deriving these semiconductor layers 11 and 12 completely without metal, reaches more than 90% derivation rate.
In the first preferred embodiment, these external circuit connectors 18 be formed on sapphire substrate 10 with these semiconductor layers 11, on 12 relative surfaces, and this transparency conducting layer 16, this cover layer 17 and this multi-layer transparent optical waveguide layer 19 are sequentially formed on this p type semiconductor layer 12.Yet these external circuit connectors 18 can be exchanged with the position of this transparency conducting layer 16, this cover layer 17 and this multi-layer transparent optical waveguide layer 19.
Should be noted that the feature disclosing all can be applied to embodiment below whole or in part in the first embodiment.
Fig. 3 is a schematic diagram that shows the light-emitting diode of second embodiment of the invention.
The places different from the first embodiment are, this first conductive hole 13 only runs through this sapphire substrate 10 and this first semiconductor layer 11 so that the electric conductor in this conductive hole 13 15 and this p type semiconductor layer 12 electrical connections.
Fig. 4 to Fig. 7 is for describing the schematic flow diagram of the manufacture method of light-emitting diode of the present invention.
Refer to shown in Fig. 4, first, a LED wafer W is provided (part that only shows this LED wafer W in graphic).This LED wafer W has several LED wafer 1.Adjacent LED wafer 1 is to be separated by line of cut L.Each LED wafer 1 is to comprise that as mentioned above a sapphire substrate 10, one are positioned at n type semiconductor layer on this base material 10 11, one and are positioned at the p type semiconductor layer 12 on this n type semiconductor layer 11.
Then, as shown in FIG. 5, by the dry ecthing procedure or the laser perforation processing procedure that utilize induction coupled plasma (ICP), each LED wafer 1 is formed with one and runs through sapphire substrate 10, n type semiconductor layer 11 and p type semiconductor layer 12 (the first embodiment) or run through sapphire substrate 10 and the first conductive hole 13 of n type semiconductor layer 11 (the second embodiment) and second conductive hole 14 that runs through sapphire substrate 10.On the other hand, when forming conductive hole 13,14, on two apparent surfaces of this wafer W, be formed with the roughly v-depression L0 extending along line of cut L.This groove L0 causes the edge of these LED wafer 1 to become a diamond leaded light limit when wafer W being cut into individual other LED wafer 1, can increase more than 20% light emission rate.And the LED wafer 1 obtaining through cutting can form 360 ° and cover the light of deriving these semiconductor layers 11 and 12 completely without metal, reaches more than 90% derivation rate.This will be the means of the utmost importance that obtain every watt of light-emitting diode more than 160 lumens.
Then, as shown in FIG. 6, on the hole wall of this first conductive hole 13, be formed with an insulating barrier 130.This insulating barrier 130 can be to be made by silicon dioxide or polyimides.
After formation insulating barrier 130, in each conductive hole 13,14, be formed with an electric conductor 15.In the present embodiment, electric conductor in this conductive hole 13 15 and transparency conducting layer 16 (seeing Fig. 7) electrical connection on this p type semiconductor layer 12, and electric conductor 15 and this n type semiconductor layer 11 electrical connections in conductive hole 14.
Shown in Fig. 7, a transparency conducting layer of being made by electroconductive ITO 16 is formed on this p type semiconductor layer 12.A cover layer 17 is formed on this transparency conducting layer 16 to prevent this transparency conducting layer 16 oxidations.A multilayer optical waveguide layer 19 is formed on this cover layer 17.
On the other hand, several external circuit connectors 18 are formed on the surface relative with these semiconductor layers 11,12 of this sapphire substrate 10 corresponding to electric conductor 15.These external circuit connectors 18 and 15 electrical connections of corresponding electric conductor and respectively comprise on a surface that is positioned at this sapphire substrate 10 and be formed at reflector on this first conductive layer 180 181, one with the first conductive layer 180 of corresponding electric conductor 15 electrical connections, one and be formed at the second conductive layer 182 and the 3rd conductive layer 183 being formed on this second conductive layer 182 on this reflector 181.
Finally, this wafer W along line of cut L cut so that as several light-emitting diodes be as shown in FIG. 1 obtained.
Should be noted that these external circuit connectors 18 can be also to be made in order to do the object that can reach 360 ° of complete bright dippings by ITO.
On the other hand, these electric conductors 15 can be also to be made by ITO, so that can not cause metal to cover leaded light, cause light to lose.
Fig. 8 is a schematic diagram that shows the light-emitting diode of third embodiment of the invention.
Refer to shown in Fig. 8, in the present embodiment, this light-emitting diode comprises first LED wafer 2, the second LED wafer 3 and the 3rd LED wafer 4.These LED wafer 2,3,4 can be sent the light of different colours.In the present embodiment, this first LED wafer 2 can be sent blue ray when running, and this second LED wafer 3 can be sent red light when running, and the 3rd LED wafer 4 can be sent green light when running.
This first LED wafer 2 has the structure roughly the same with the LED wafer 1 of the first embodiment, different places is to be omitted at the multilayer optical waveguide layer 19 shown in Fig. 1, the substitute is three electrically conducting islands 20 of isolation, and the perforation 22 that is to be formed with a through hole 21 that is communicated with the conducting island 20 that this conductive layer 16 is corresponding with one and this n type semiconductor layer 11 of connection and a corresponding conducting island 20.Hole wall at this through hole 21 and this perforation 22 is all formed with an insulating barrier 210,220.Electric conducting material 23 is filled in this through hole 21 and this perforation 22 so that a conducting island 20 in three conducting islands 20 is that another conducting island 20 in three conducting islands 20 is electrically connected with the n type semiconductor layer 11 of this first LED wafer 2 with conductive layer 16 electrical connections.
This second LED wafer 3 has the structure identical with the LED wafer 1 of the first embodiment.Or this second LED wafer 3 can be general LED wafer.This second LED wafer 3 be with overlay crystal chip mode be arranged on this cover layer 17 so that the p type semiconductor layer 32 of this second LED wafer 3 be connected electrically to the conducting island 20 of conductive layer 16 electrical connections and so that the n type semiconductor layer 31 of this second LED wafer 3 be connected electrically in these three conducting islands 20 not with the conducting island 20 of n type semiconductor layer 11 electrical connections of conductive layer 16 or the first LED wafer 2.
The 3rd LED wafer 4 has the structure identical with the LED wafer 1 of the first embodiment.Or the 3rd LED wafer 4 can be general LED wafer.The 3rd LED wafer 4 is to be also arranged on this cover layer 17 so that the p type semiconductor layer 32 of the 3rd LED wafer 4 is connected electrically to the identical conducting island 20 that connected with the n type semiconductor layer 31 of the second LED wafer 3 and so that the n type semiconductor layer 41 of the 3rd LED wafer 4 is connected electrically to the conducting island 20 with n type semiconductor layer 11 electrical connections of the first LED wafer 2 in overlay crystal chip mode.
By structure as above, this light-emitting diode can send white light under phosphor powder.
Fig. 9 is a schematic diagram that shows the light-emitting diode of fourth embodiment of the invention.
As shown in FIG. 9, the light-emitting diode of the present embodiment comprises one first LED wafer 2, one second LED wafer 3, one the 3rd LED wafer 4 and a substrate 5.
In the present embodiment, this substrate 5 is glass substrates and has second installation surperficial 51 relative with this first installation surface 50 with of one first installation surface 50.Severally by the conductive traces 52 that preferably ITO forms, be formed on this and first install on surface 50.In the present embodiment, the conductive traces 52 of part extends to this second surface 51 from this first installation surface 50.
This first LED wafer 2 be arranged on this substrate 5 and also have one be placed in first of this substrate 5 install sapphire substrate 20, the n type semiconductor layer 21 on this sapphire substrate 20 and the p type semiconductor layer 22 on this n type semiconductor layer 21 on surface 50 and for the electrical connection of external circuit (not shown) respectively with N-type and the P type electrode 210 and 220 of N type semiconductor.
This second LED wafer 3 has the structure identical with the first LED wafer 2 and is in overlay crystal chip mode, to be installed on first of this substrate 5 to install on surface 50 and from the first installation surface 50, extend to the conductive traces 52 on the second installation surface 51 so that the P type electrode 320 of this second LED wafer 3 is connected electrically to one of them, and the N-type electrode 310 of this second LED wafer 3 is connected electrically to one and does not extend to this and second the conductive traces 52 on surface 51 is installed.
The 3rd LED wafer 4 has the structure identical with the first LED wafer 2 and is in overlay crystal chip mode, to be installed on first of this substrate 5 to install on surface 50 so that the P type electrode 420 of the 3rd LED wafer 4 is connected electrically to the identical conductive traces 52 being connected with the N-type electrode 310 of this second LED wafer 3, and the N-type electrode 410 of the 3rd LED wafer 4 is connected to another and first the conductive traces 52 that surface 50 extends to the second installation surface 51 is installed from this.
The N-type of this first LED wafer 2 and P type electrode 210 with 220 and these conductive traces 52 to extend to that second of this substrate 5 installs in the track part on surface 51 be to be formed with for being connected electric conductor 6 with the outside of external circuit (not shown) electrical connection.
Figure 10 is a schematic diagram that shows the light-emitting diode of fifth embodiment of the invention.
As shown in Figure 10, the light-emitting diode of the present embodiment comprises one first LED wafer 2, one second LED wafer 3 and one the 3rd LED wafer 4.
This first LED wafer 2 have a sapphire substrate 20, the n type semiconductor layer 21 on this sapphire substrate 20 and the p type semiconductor layer 22 on this n type semiconductor layer 21 and for external circuit (not shown) electrical connection respectively with N-type and the P type electrode 210 and 220 of n type semiconductor layer 21 and p type semiconductor layer 22 electrical connections.
In the present embodiment, this first LED wafer 2 is to be formed with two perforations 24 that run through base material 20p and these semiconductor layers 21,22.On the hole wall of each perforation 24, be formed with an insulating barrier 240.On several surfaces relative with these semiconductor layers 21,22 that are formed in this base material 20 by the conductive traces 25 that preferably ITO forms.In the present embodiment, the conductive traces 25 of part extends in perforation 24 and projects into this first LED wafer 2 outsides.
This second LED wafer 3 has the structure identical with the first LED wafer 2 and is to be installed on the surface that is laid with these conductive traces 25 of base material 20 of this first LED wafer 2 and to extend to the conductive traces 25 in perforation 24 so that the P type electrode 320 of this second LED wafer 3 is connected electrically to one of them in overlay crystal chip mode, and the N-type electrode 310 of this second LED wafer 3 is connected electrically to a conductive traces 25 not extending in perforation 24.
The 3rd LED wafer 4 has the structure identical with the first LED wafer 2 and is to be installed on the surface that is laid with these conductive traces 25 of base material 20 of this first LED wafer 2 so that the P type electrode 420 of the 3rd LED wafer 4 is connected electrically to the identical conductive traces 25 being connected with the N-type electrode 310 of this second LED wafer 3 in overlay crystal chip mode, and the N-type electrode 410 of the 3rd LED wafer 4 is connected to another, extends to the conductive traces 25 in perforation 24.
At the N-type of this first LED wafer 2 and P type electrode 210 and 220 and the extending in perforation 24 and project in the part of these the first LED wafer 2 outsides and be formed with for being connected electric conductor 6 with the outside of external circuit (not shown) electrical connection of these conductive traces 25.
Figure 11 is the schematic diagram of the light-emitting diode of sixth embodiment of the invention.
Refer to shown in Figure 11, the light-emitting diode of the present embodiment comprises one first LED wafer 2, one second LED wafer 3, one the 3rd LED wafer 4 and several conductor 25.
This first LED wafer 2 has a sapphire substrate 20, the n type semiconductor layer 21 on this sapphire substrate 20, the p type semiconductor layer 22 on this n type semiconductor layer 21, for the N-type with the electrical connection of external circuit (not shown) and P type electrode 210 and 220 and two, runs through the perforations 24 of this sapphire substrate 20, this n type semiconductor layer 21 and this p type semiconductor layer 22.On the internal face of each perforation 24, be formed with an insulating barrier 240.
This second LED wafer 3 has sapphire substrate 20 relative with n type semiconductor layer 21 this first LED wafer 2 lip-deep sapphire substrate 30, the n type semiconductor layer 31 on this sapphire substrate 30 and the p type semiconductor layer 32 on this n type semiconductor layer 31 that is placed in this first LED wafer 2.On this n type semiconductor layer 31 and this p type semiconductor layer 32, be to be formed with respectively a N-type electrode 310 and a P type electrode 320.
The 3rd LED wafer 4 and this second LED wafer 3 are arranged on the surface relative with the n type semiconductor layer 21 of this first LED wafer 2 of sapphire substrate 20 of this first LED wafer 2 abreast.The 3rd LED wafer 4 has sapphire substrate 40, the n type semiconductor layer 41 on this sapphire substrate 40 and the p type semiconductor layer 42 on this n type semiconductor layer 41 being placed on the base material 20 of this first LED wafer 2.On this n type semiconductor layer 41 and this p type semiconductor layer 42, be formed with respectively a N-type electrode 410 and a P type electrode 420.
One of them conductor 25 extends in perforation 24 and projects into this first LED wafer 2 outsides from the N-type electrode 310 of this second LED wafer 3.Another conductor 25 extends in perforation 24 and projects into this first LED wafer 2 outsides from the P type electrode 420 of the 3rd LED wafer 4.And another conductor 25 extends to the N-type electrode 410 of the 3rd light-emitting diode 4 from the P type electrode 320 of this second LED wafer 3.
At the N-type of this first LED wafer 2 and P type electrode 210 and 220 and the extending in perforation 24 and project in the part of these the first LED wafer 2 outsides and be formed with for being connected electric conductor 6 with the outside of external circuit (not shown) electrical connection of these conductive traces 25.
Figure 12 is the schematic diagram of the light-emitting diode of seventh embodiment of the invention.
Refer to shown in Figure 12, the light-emitting diode of the present embodiment comprises one first LED wafer 2, one second LED wafer 3, one the 3rd LED wafer 4, one first installation base plate 7 and one second installation base plate 8.
This first installation base plate 7 has a first surface 70 and several predetermined circuit trace 71 being laid on this first surface 70.
This first LED wafer 2 has a sapphire substrate 20, the n type semiconductor layer 21 on this sapphire substrate 20, the p type semiconductor layer 22 on this n type semiconductor layer 21 and for N-type and P type electrode 210 and 220 with the electrical connection of external circuit (not shown).In each in these electrodes 210,220, be formed with the outside electric conductor 6 that connects.This first LED wafer 2 connects electric conductor 6 by outside and is arranged on this first installation base plate 7 to cover crystal type with corresponding circuit trace 71 electrical connections of this first installation base plate 7.
This second LED wafer 3 can have the structure identical or not identical with this first LED wafer 2.In the present embodiment, this second LED wafer 3 has sapphire substrate 20 relative with n type semiconductor layer 21 this first LED wafer 2 lip-deep sapphire substrate 30, the n type semiconductor layer 31 on this sapphire substrate 30 and the p type semiconductor layer 32 on this n type semiconductor layer 31 that is placed in this first LED wafer 2.On this n type semiconductor layer 31 and this p type semiconductor layer 32, be formed with respectively a N-type electrode 310 and a P type electrode 320.
The 3rd LED wafer 4 can have the structure identical or not identical with this first and second LED wafer 2 and 3.In the present embodiment, the 3rd LED wafer 4 and this second LED wafer 3 are arranged on the surface relative with the n type semiconductor layer 21 of this first LED wafer 2 of sapphire substrate 20 of this first LED wafer 2 abreast.The 3rd LED wafer 4 has sapphire substrate 40, the n type semiconductor layer 41 on this sapphire substrate 40 and the p type semiconductor layer 42 on this n type semiconductor layer 41 being placed on the base material 20 of this first LED wafer 2.On this n type semiconductor layer 41 and this p type semiconductor layer 42, be formed with respectively a N-type electrode 410 and a P type electrode 420.
This second installation base plate 8 has a first surface 80 and several predetermined circuit trace 81 being laid on this first surface 80.This second installation base plate 8 arranges under its first surface 80 state relative with the first surface 70 of this first installation base plate 7 so that the N-type electrode 310 of this second LED wafer 3 outside connects the predetermined circuit trace 81 that electric conductor 6 is connected to this second installation base plate 8 via one, the P type electrode 320 of this second LED wafer 3 and the N-type electrode 410 of the 3rd LED wafer 4 are connected via outside the predetermined circuit trace 81 that electric conductor 6 is connected to this second installation base plate 8, and the P type electrode 420 of the 3rd LED wafer 4 outside connects the predetermined circuit trace 81 that electric conductor 6 is connected to this second installation base plate 8 via one.
The corresponding circuit trace 71,81st of this first installation base plate 7 and this second installation base plate 8, is electrically connected by electric conductor 6.
Figure 13 is the schematic diagram of the light-emitting diode of eighth embodiment of the invention.
Refer to shown in Figure 13, the light-emitting diode of the present embodiment comprises one first LED wafer 2, one second LED wafer 3, one the 3rd LED wafer 4 and an installation base plate 5.
In the present embodiment, this substrate 5 has the conductive traces 52 on an installation surface 50, a depressed part 53 and several bottom surface 530 being formed on this installation surface 50 with this depressed part 53.
This first LED wafer 2 be arranged on this substrate 5 and also there is a sapphire substrate 20, the n type semiconductor layer 21 on this sapphire substrate 20 and the p type semiconductor layer 22 on this n type semiconductor layer 21 and for external circuit (not shown) electrical connection respectively with N-type and the P type electrode 210 and 220 of N type semiconductor.This first LED wafer 2 is in overlay crystal chip mode, by outside, to connect electric conductor 6 to be installed on the installation surface 50 of this substrate 5.
This second LED wafer 3 can have the structure identical with the first LED wafer 2 and be to connect on the bottom surface 530 of depressed part 53 that electric conductor 6 is installed on this substrate 5 by outside in overlay crystal chip mode.
The 3rd LED wafer 4 can have the structure identical with the second LED wafer 3 and be to connect on the bottom surface 530 of depressed part 53 that electric conductor 6 is installed on this substrate 5 so that the P type electrode 420 of the 3rd LED wafer 4 and 310 electrical connections of the N-type electrode of this second LED wafer 3 by outside in overlay crystal chip mode.
Figure 14 is the schematic diagram of the light-emitting diode of ninth embodiment of the invention.
Refer to shown in Figure 14, the light-emitting diode of the present embodiment comprises one first LED wafer 2, one second LED wafer 3, one the 3rd LED wafer 4 and an installation base plate 5.
This installation base plate 5 has an installation surface 50 and is laid in the predetermined circuit trace 52 on this installation surface 50.
This first LED wafer 2 has the structure identical with the first LED wafer 2 of the 9th embodiment and is in overlay crystal chip mode, by outside, to connect electric conductor 6 to be installed on the installation surface 50 of this substrate 5.
This second LED wafer 3 has the structure identical with the second LED wafer 3 of the 9th embodiment and is placed on the surface relative with semiconductor layer 21,22 of base material 20 of this first LED wafer 2.
The 3rd LED wafer 4 has the structure identical with the 3rd LED wafer 4 of the 9th embodiment and is placed in side by side on the surface relative with semiconductor layer 21,22 of base material 20 of this first LED wafer 2 with this second LED wafer 3.
The N-type electrode 310 of this second LED wafer 3 and the P type electrode 420 of the 3rd LED wafer 4 are connected electrically to corresponding circuit trace 52 via wire 6 ' respectively, and the P type electrode 320 of this second LED wafer 3 is electrically connected via wire 6 ' with the N-type electrode 410 of the 3rd LED wafer 4.
In sum, light-emitting diode of the present invention, really can the above-mentioned disclosed structure of mat, device, reaches object and the effect of expection, and does not see also unexposed use of publication before application, meets the important documents such as novelty, progress of patent of invention.
Only, above-mentioned taken off graphic and explanation, is only embodiments of the invention, non-for limiting embodiments of the invention; Generally be familiar with the personage of this skill, it complies with feature category of the present invention, and other equivalences of doing change or modify, and all should be encompassed in the claim of following this case.

Claims (16)

1. a light-emitting diode, comprises:
One LED wafer, this LED wafer comprises that a sapphire substrate, is positioned at the first type semiconductor layer, on this base material and is positioned at the insulating barrier on the hole wall that the second conductive hole and that the first conductive hole, that Second-Type semiconductor layer, in this first type semiconductor layer runs through this sapphire substrate and this first type semiconductor layer runs through this sapphire substrate is formed at this first conductive hole;
One transparency conducting layer of being made by conductor, this transparency conducting layer is formed on this Second-Type semiconductor layer;
One is formed at the cover layer on this transparency conducting layer;
Be formed at the electric conductor in each conductive hole, the electrical connection of the electric conductor in the first conductive hole and this Second-Type semiconductor layer, and electric conductor in the second conductive hole is electrically connected with this first type semiconductor layer; And
Two lip-deep external circuit connectors relative with these semiconductor layers that are formed on this sapphire substrate.
2. the light-emitting diode as described in claim 1, it is characterized in that these external circuit connectors and the electrical connection of corresponding electric conductor and respectively comprise on a surface that is positioned at this sapphire substrate and be formed at the conductive reflective on this first conductive layer, the second conductive layer and the 3rd conductive layer being formed on this second conductive layer being formed on this reflector with the first conductive layer of a corresponding electric conductor electrical connection, one.
3. the light-emitting diode as described in claim 2, it is characterized in that, the first conductive layer of each external circuit connector can be to be made by ITO, this reflector can be to be made by any applicable electric conducting material, this second conductive layer can be a nickel/gold layer, and the 3rd conductive layer can be a projection.
4. the light-emitting diode as described in claim 1, is characterized in that, this transparency conducting layer is to be made by electroconductive ITO.
5. the light-emitting diode as described in claim 1, it is characterized in that, this light-emitting diode more comprises one and is formed on this supratectal multi-layer transparent optical waveguide layer, and this multi-layer transparent optical waveguide layer makes light-output only have a direction, therefore can promote irradiant brightness because concentrating.
6. the light-emitting diode as described in claim 5, it is characterized in that, the multilayer refractive index of this multi-layer transparent optical waveguide layer can be as 2.2 ~ 2.3/2.3 ~ 2.4/2.2 ~ 2.3/2.3 ~ 2.4, similar to GAN or GAAS refractive index 2.4 ~ 2.5, make the unidirectional refraction of blue light, in order to avoid cause secondary reflection.
7. the light-emitting diode as described in claim 1, it is characterized in that, the surperficial edge relative with these semiconductor layers of the edge of these semiconductor layers and this sapphire substrate is shaped to a diamond leaded light limit in order to do the light emission rate that can increase more than at least 20%.
8. the light-emitting diode as described in claim 1, is characterized in that, this first conductive hole more runs through this Second-Type semiconductor layer so that the electric conductor in this conductive hole and electric connection of transparency conducting layer on this Second-Type semiconductor layer.
9. a manufacture method for light-emitting diode, comprises following step:
One LED wafer is provided, this LED wafer has several adjacent LED wafer, adjacent LED wafer is to be separated by line of cut, and each LED wafer comprises that the first type semiconductor layer, that a sapphire substrate, is positioned on this base material is positioned at the Second-Type semiconductor layer in this first type semiconductor layer;
Form the second conductive hole that first conductive hole and that runs through this sapphire substrate, this first type semiconductor layer runs through this sapphire substrate;
On the hole wall of this first conductive hole, be formed with an insulating barrier;
In each conductive hole, form an electric conductor so that the electrical connection of the electric conductor in the first conductive hole and this Second-Type semiconductor layer, and electric conductor in the second conductive hole is electrically connected with this first type semiconductor layer;
Form a transparency conducting layer on this Second-Type semiconductor layer;
Form a cover layer on this transparency conducting layer; And
Form a multilayer optical waveguide layer on this cover layer.
10. a light-emitting diode, comprises:
One first LED wafer, this first LED wafer comprises a sapphire substrate, one is positioned at the first type semiconductor layer on this base material, one is positioned at the Second-Type semiconductor layer in this first type semiconductor layer, one runs through the first conductive hole of this sapphire substrate and this first type semiconductor layer, one runs through the second conductive hole of this sapphire substrate, and the insulating barrier being formed on the hole wall of this first conductive hole, one is formed at the transparency conducting layer of being made by conductor on this Second-Type semiconductor layer, one is formed at the cover layer on this transparency conducting layer, three are formed on this cover layer and are the conducting islands of electrically isolating, one is communicated with the through hole of the conducting island that this conductive layer is corresponding with, one is communicated with the perforation of this first type semiconductor layer conducting island corresponding with, be formed at respectively the insulating barrier of the hole wall of this through hole and this perforation, be filled in this through hole and this perforation so that the electric conducting material that the first type semiconductor layer of a conducting island in three conducting islands another conducting island in three conducting islands and this first LED wafer with conductive layer electrical connection is electrically connected,
One second LED wafer, this second LED wafer be with overlay crystal chip mode be arranged on the cover layer of this first LED wafer so that the Second-Type semiconductor layer of this second LED wafer be connected electrically to the conducting island of the conductive layer electrical connection of this first LED wafer and so that the first type semiconductor layer of this second LED wafer be connected electrically in these three conducting islands not with the conducting island of the conductive layer of this first LED wafer or the first type semiconductor layer electrical connection of the first LED wafer;
One the 3rd LED wafer, the 3rd LED wafer is to be arranged on the cover layer of this first LED wafer so that the Second-Type semiconductor layer of the 3rd LED wafer is connected electrically to the identical conducting island that connected with the first type semiconductor layer of this second LED wafer and so that the first type semiconductor layer of the 3rd LED wafer is connected electrically to the conducting island with the first type semiconductor layer electrical connection of this first LED wafer in overlay crystal chip mode, these LED wafer can send the light of different colours so that this light-emitting diode can send the light with the desirable color that the light by the different colours of these LED wafer combines.
11. 1 kinds of light-emitting diodes, comprise:
One substrate, this substrate is a transparency carrier and has one first and surface and is installed first that the second relative installation of surface is installed is surperficial with this, it is upper that several electrically conducting transparent tracks are formed on this first installation surface, and the conductive traces of part extends to this second surface from this first installation surface;
One first LED wafer, this first LED wafer is arranged on this substrate and has one and is placed in that first of this substrate is installed lip-deep sapphire substrate, the first type semiconductor layer on this sapphire substrate, the Second-Type semiconductor layer in this first type semiconductor layer and for the first type and the Second-Type electrode that are connected with Second-Type semiconductor layer with the first type semiconductor layer respectively with external circuit electrical connection;
One second LED wafer, this second LED wafer has the structure identical with the first LED wafer and is that one of them that be installed in overlay crystal chip mode that first of this substrate installs that the upper so that Second-Type electrode of this second LED wafer in surface is connected electrically to this substrate extends to the conductive traces on the second installation surface from the first installation surface, and the first type electrode of this second LED wafer is connected electrically to one and does not extend to this and second surperficial conductive traces is installed; And
One the 3rd LED wafer, the 3rd LED wafer has the structure identical with the first LED wafer and is in overlay crystal chip mode, to be installed on first of this substrate surface to be installed above so that the Second-Type electrode of the 3rd LED wafer is connected electrically to the identical conductive traces being connected with the first type electrode of this second LED wafer, and the first type electrode of the 3rd LED wafer is connected to another from the surperficial conductive traces that extends to the second installation surface of this first installation; And
The outside for being electrically connected with external circuit being formed in the surperficial track part of the first type of this first LED wafer and second installation that extends to this substrate of Second-Type electrode and these conductive traces is connected electric conductor.
12. 1 kinds of light-emitting diodes, comprise:
One first LED wafer, this first LED wafer has a sapphire substrate, the first type semiconductor layer on this sapphire substrate, with the Second-Type semiconductor layer in this first type semiconductor layer, and for external circuit electrical connection respectively with the first type and the Second-Type electrode of the first type semiconductor layer and the electrical connection of Second-Type semiconductor layer, this first LED wafer is formed with two perforations that run through this base material and these semiconductor layers, on the hole wall of each perforation, be formed with an insulating barrier, several electrically conducting transparent tracks are formed on the surface relative with these semiconductor layers of this base material, the conductive traces of part extends in perforation and projects into this first LED wafer outside,
One second LED wafer, this second LED wafer has the structure identical with the first LED wafer and is to be installed on the surface that is laid with these conductive traces of base material of this first LED wafer and to extend to the conductive traces in perforation so that the Second-Type electrode of this second LED wafer is connected electrically to one of them in overlay crystal chip mode, and the first type electrode of this second LED wafer is connected electrically to a conductive traces not extending in perforation; And
One the 3rd LED wafer, the 3rd LED wafer has the structure identical with the first LED wafer and is to be installed on the surface that is laid with these conductive traces of base material of this first LED wafer so that the Second-Type electrode of the 3rd LED wafer is connected electrically to the identical conductive traces being connected with the first type electrode of this second LED wafer in overlay crystal chip mode, and the first type electrode of the 3rd LED wafer is connected to another, extends to the conductive traces in perforation; And
The first type that is formed at this first LED wafer and Second-Type electrode and the outside that extends in perforation and project in the part of this first LED wafer outside that is formed at these conductive traces are connected electric conductor.
13. 1 kinds of light-emitting diodes, comprise:
One first LED wafer, this first LED wafer comprises a sapphire substrate, the first type semiconductor layer on this sapphire substrate, the Second-Type semiconductor layer in this first type semiconductor layer, for the first type and Second-Type electrode and two perforations that run through this sapphire substrate, this first type semiconductor layer and this Second-Type semiconductor layer with external circuit electrical connection, on the internal face of each perforation, be formed with an insulating barrier;
One second LED wafer, this second LED wafer has sapphire substrate relative with the first type semiconductor layer this first LED wafer lip-deep sapphire substrate, the first type semiconductor layer on this sapphire substrate and the Second-Type semiconductor layer in this first type semiconductor layer that is placed in this first LED wafer, is formed with respectively one first type electrode and a Second-Type electrode on this first type semiconductor layer and this Second-Type semiconductor layer;
One the 3rd LED wafer, the 3rd LED wafer and this second LED wafer are arranged on the surface relative with the first type semiconductor layer of this first LED wafer of sapphire substrate of this first LED wafer abreast, the 3rd LED wafer has a sapphire substrate being placed on the base material of this first LED wafer, the first type semiconductor layer on this sapphire substrate, and the Second-Type semiconductor layer in this first type semiconductor layer, on this first type semiconductor layer and this Second-Type semiconductor layer, be formed with respectively one first type electrode and a Second-Type electrode,
Several conductors, wherein, a conductor extends in perforation and projects into this first LED wafer outside from the first type electrode of this second LED wafer, another conductor extends in perforation and projects into this first LED wafer outside from the Second-Type electrode of the 3rd LED wafer, and another conductor extends to the first type electrode of the 3rd light-emitting diode from the Second-Type electrode of this second LED wafer; And
Be formed at the first type of this first LED wafer and be connected electric conductor with on Second-Type electrode and the outside that extends in perforation and project in the part of this first LED wafer outside that is formed at these conductive traces.
14. 1 kinds of light-emitting diodes, comprise:
One first installation base plate, this first installation base plate has a first surface and several predetermined circuit trace being laid on this first surface;
One first LED wafer, this first LED wafer has a sapphire substrate, the first type semiconductor layer on this sapphire substrate, the Second-Type semiconductor layer in this first type semiconductor layer and for the first type and Second-Type electrode with external circuit electrical connection, in each in these electrodes, be formed with the outside electric conductor that connects, this first LED wafer connects electric conductor by outside and is arranged on this first installation base plate to cover crystal type with the corresponding circuit trace electrical connection of this first installation base plate;
One second LED wafer, this second LED wafer has sapphire substrate relative with the first type semiconductor layer this first LED wafer lip-deep sapphire substrate, the first type semiconductor layer on this sapphire substrate and the Second-Type semiconductor layer in this first type semiconductor layer that is placed in this first LED wafer, is formed with respectively one first type electrode and a Second-Type electrode on this first type semiconductor layer and this Second-Type semiconductor layer;
One the 3rd LED wafer, the 3rd LED wafer and this second LED wafer are arranged on the surface relative with the first type semiconductor layer of this first LED wafer of sapphire substrate of this first LED wafer abreast, the 3rd LED wafer has a sapphire substrate being placed on the base material of this first LED wafer, the first type semiconductor layer on this sapphire substrate, and the Second-Type semiconductor layer in this first type semiconductor layer, on this first type semiconductor layer and this Second-Type semiconductor layer, be formed with respectively one first type electrode and a Second-Type electrode, and
One second installation base plate, this second installation base plate has a first surface and several predetermined circuit trace being laid on this first surface, this second installation base plate arranges under its first surface state relative with the first surface of this first installation base plate so that the first type electrode of this second LED wafer outside connects the predetermined circuit trace that electric conductor is connected to this second installation base plate via one, the first type electrode of the Second-Type electrode of this second LED wafer and the 3rd LED wafer is connected via outside the predetermined circuit trace that electric conductor is connected to this second installation base plate, and the Second-Type electrode of the 3rd LED wafer outside connects the predetermined circuit trace that electric conductor is connected to this second installation base plate via one, this first installation base plate is electrically connected by electric conductor with the corresponding circuit trace of this second installation base plate.
15. 1 kinds of light-emitting diodes, comprise:
One installation base plate, this substrate has an installation surface, a depressed part and several this conductive traces of installation surface above and on the bottom surface of this depressed part that be formed on;
One first LED wafer, this first LED wafer be arranged on this substrate and also there is a sapphire substrate, the first type semiconductor layer on this sapphire substrate and the Second-Type semiconductor layer in this first type semiconductor layer and for external circuit electrical connection respectively with the first type and the Second-Type electrode of the first type semiconductor layer and the electrical connection of Second-Type semiconductor layer, this first LED wafer is in overlay crystal chip mode, by outside, to connect electric conductor to be installed on the installation surface of this substrate;
One second LED wafer, this second LED wafer is to connect on the bottom surface of depressed part that electric conductor is installed on this substrate by outside in overlay crystal chip mode; And
One the 3rd LED wafer, the 3rd LED wafer is in overlay crystal chip mode, by outside, to connect on the bottom surface of depressed part that electric conductor is installed on this substrate so that the Second-Type electrode of the 3rd LED wafer is the first type electrode electrical connection with this second LED wafer.
16. 1 kinds of light-emitting diodes, comprise:
One installation base plate, this installation base plate has an installation surface and is laid in the lip-deep predetermined circuit trace of this installation;
One first LED wafer, this first LED wafer is in overlay crystal chip mode, by outside, to connect electric conductor to be installed on the installation surface of this substrate;
One second LED wafer, this second LED wafer is placed on the surface relative with semiconductor layer of base material of this first LED wafer; And
One the 3rd LED wafer, the 3rd LED wafer and this second LED wafer are placed on the surface relative with semiconductor layer of base material of this first LED wafer side by side;
The first type electrode of this second LED wafer and the Second-Type electrode of the 3rd LED wafer are connected electrically to corresponding circuit trace via wire respectively, and the first type electrode of the Second-Type electrode of this second LED wafer and the 3rd LED wafer is electrically connected via wire.
CN201210309925.5A 2012-08-28 2012-08-28 Light-emitting diode element Pending CN103633219A (en)

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Application publication date: 20140312