CN103632634A - Active matrix organic light emitting diode pixel structure - Google Patents

Active matrix organic light emitting diode pixel structure Download PDF

Info

Publication number
CN103632634A
CN103632634A CN201310518890.0A CN201310518890A CN103632634A CN 103632634 A CN103632634 A CN 103632634A CN 201310518890 A CN201310518890 A CN 201310518890A CN 103632634 A CN103632634 A CN 103632634A
Authority
CN
China
Prior art keywords
pixel
sub
secondary sub
pixels
dot structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310518890.0A
Other languages
Chinese (zh)
Inventor
黄金海
黄思齐
陈俊霖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CPT Video Wujiang Co Ltd
Chunghwa Picture Tubes Ltd
Original Assignee
CPT Video Wujiang Co Ltd
Chunghwa Picture Tubes Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CPT Video Wujiang Co Ltd, Chunghwa Picture Tubes Ltd filed Critical CPT Video Wujiang Co Ltd
Priority to CN201310518890.0A priority Critical patent/CN103632634A/en
Publication of CN103632634A publication Critical patent/CN103632634A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses an active matrix organic light emitting diode (AMOLED) pixel structure, comprising a plurality of sub pixels, wherein at least one sub pixel comprises two second-level sub pixels, the second-level sub pixels are respectively configured with organic luminescent materials with different luminescent characteristics, the second-level sub pixels are capable of emitting different light rays, and the effect of improving the displaying capability of an AMOLED displayer is realized by means of the blending light of the second-level sub pixels.

Description

Active matrix organic LED dot structure
Technical field
The invention relates to a kind of organic LED pixel structure, particularly a kind of active matrix organic LED display dot structure.
Background technology
Use electroluminescence plane display module (as Organic Light Emitting Diode (Organic Light Emitting Diodes; OLEDs)) display device has become a kind of welcome selection in display.OLED display be be TV screen, graphoscope, as mobile phone and individual number be the portable electronic system of assistant (PDAs).OLED is the light emitting diode that a kind of luminous electroluminescence layer is organic compound thin film, and this organic compound thin film is responded an electric current and launched bright dipping.This organic semiconducting materials layer is between two electrodes.Conventionally, at least one of these electrodes is transparent.Because the running of OLED display need not be backlight.Therefore, it can demonstrate black layers, also can come frivolously such as other flat-panel monitors of liquid crystal display.OLED display is used passive-matrix OLED (Passive-Matrix OLED; PMOLED) or active-matrix OLED (Active-Matrix OLED; AMOLED) framework, wherein AMOLED is more suitable in high resolving power and large-sized display.
AMOLED display comprises the circuit layer being formed at as on the base material of glass conventionally; And be formed at the luminescent layer on circuit layer.Luminescent layer comprises a plurality of equidistant pixels, and these a little pixels are that the form with a matrix of plural number row and several column is placed in a viewing area.For color monitor, each pixel also comprises three sub-pixels that send respectively red, green and blue light (RGB).Mostly sub-pixel is to arrange in the mode of (side by side) side by side.In this arranges, each pixel packets is containing three RGB sub-pixels that are arranged as an array of line direction, and the arrangement of subpixels of same color to be column direction continuous band-shaped.
Because the material behavior of tri-sub-pixels of RGB is different, make the luminescence efficiency difference of three kinds of color material very big.Be limited to material behavior, when pursuing high brightness, the color saturation of display just can decline or power consumption increases; When pursuing wide colour gamut, may affect because contrast is difficult to pull open performance again; And if to pursue color or the accuracy of contrast factor (Gamma), need to coordinate homogenous material characteristic to adjust, sacrifice the brightness performance of display.
Summary of the invention
The invention provides a kind of active matrix organic LED dot structure, single sub-pixel is divided into the secondary sub-pixel that two characteristics of luminescences are different, with the mixed light by secondary sub-pixel, reach the effect of the display capabilities that promotes display.
An aspect of the present invention provides a kind of active matrix organic LED (AMOLED) dot structure, comprises a plurality of sub-pixels.At least one sub-pixel includes two secondary sub-pixels, and secondary sub-pixel configures respectively the luminous organic material that the characteristics of luminescence is different, makes secondary sub-pixel send different light.
In one or more embodiment of the present invention, the secondary sub-pixel of each sub-pixel is shared a data line and is driven simultaneously.
In one or more embodiment of the present invention, secondary sub-pixel configures respectively the luminous organic material of different luminescence efficiencys or different colors tune.
In one or more embodiment of the present invention, secondary sub-pixel configures respectively the luminous organic material of different colours.
In one or more embodiment of the present invention, the secondary sub-pixel area in each sub-pixel can be identical or different.
In one or more embodiment of the present invention, active matrix organic LED dot structure also comprises a plurality of driving thin film transistor (TFT)s, in order to drive secondary sub-pixel, wherein drives the size of thin film transistor (TFT) can be identical or different.
In one or more embodiment of the present invention, those secondary sub-pixels in each sub-pixel can be separated by data line or sweep trace.
In one or more embodiment of the present invention, wherein each sub-pixel can configure a data line and two sweep traces, and sweep trace is corresponding secondary sub-pixel respectively.
AMOLED dot structure of the present invention configures dissimilar material properties in single sub-pixel, the different OLED luminescent material of luminescence efficiency difference or tone for example, the light mixed light sending through secondary sub-pixel is adjusted the GTG brightness of sub-pixel, makes display still can maintain preferably brightness after adjusting gamma.In two secondary sub-pixels in sub-pixel, configure the luminescent material of heterogeneity, the area ratio of two secondary sub-pixels can be for identical or different, or the size of the driving thin film transistor (TFT) that two secondary sub-pixels configure can be for identical or different.Single sub-pixel can also configure two scanning linears, further to promote the design flexibility of adjusting sub-pixel colors performance.What is more, in some cases, two secondary sub-pixels in sub-pixel can also configure the OLED luminescent material of different colours, as add yellow, to reach, increase brightness or the effect of augmentation colour gamut.
Accompanying drawing explanation
Fig. 1 to Fig. 5 illustrates respectively the top view of the different embodiment of active matrix organic LED of the present invention (AMOLED) dot structure.
[primary clustering symbol description]
100,200,300,400,500:AMOLED dot structure
S, S1, S2: sweep trace
D1, D2, D3: data line
VDD1, VDD2, VDD3, VDD4: power lead
P1: the first sub-pixel
P2: the second sub-pixel
P3: the 3rd sub-pixel
110,210,310,410,510: the first secondary sub-pixels
120,220,320,420,520: the second secondary sub-pixels
130,230,530: the three secondary sub-pixels
140,240,540: the four secondary sub-pixels
150,250,550: the five secondary sub-pixels
160,260,560: the six secondary sub-pixels
DTFT1-DTFT6: drive thin film transistor (TFT).
Embodiment
Below will clearly demonstrate spirit of the present invention with graphic and detailed description, under any, in technical field, have and conventionally know that the knowledgeable is after understanding preferred embodiment of the present invention, when can be by the technology of teachings of the present invention, change and modification, it does not depart from spirit of the present invention and scope.
Pixel (pixel) word of mentioning in literary composition in following, refers to display unit (or the single point showing in screen) minimum in screen, and the color alignment that is also equal to luminescent material in luminescent layer forms the least unit repeating.In pixel, include a plurality of sub-pixels (sub pixel), each sub-pixel can be driven thin film transistor (TFT) institute drive.When practical application, in each display, can include a plurality of pixels, pixel is repeated arrangement regularly.The quantity of pixel changes to some extent along with the demand of resolution, for convenience of explanation for the purpose of, in following examples, only the structure with a single pixel describes, close first chat bright.
Difference in view of Organic Light Emitting Diode (OLED) material behavior, the present invention proposes a kind of active organic light-emitting diode (AMOLED) display architectures, by the OLED material in single secondary subpixel configuration heterogeneity, the brightness ratio of adjusting bi-material, reaches the object of taking into account GTG tone, brightness and color saturation.
With reference to Fig. 1, it illustrates the top view of active matrix organic LED of the present invention (AMOLED) dot structure one embodiment.Four power lead VDD1, VDD2, VDD3, VDD4 that AMOLED dot structure 100 includes one scan line S, intersects and be sequentially arranged in parallel with sweep trace S, data line D1, the D2, the D3 that intersect and be sequentially arranged in parallel with sweep trace S.Power lead VDD1-VDD4 and data line D1-D3 are for arranging alternately, and data line D1 is between power lead VDD1 and VDD2; Data line D2 is between power lead VDD2 and VDD3; Data line D3 is between power lead VDD3 and VDD4.
AMOLED dot structure 100 in the present embodiment includes the first sub-pixel P1, the second sub-pixel P2 and the 3rd sub-pixel P3.The first sub-pixel P1 is defined by sweep trace S and data line D1; The second sub-pixel P2 is defined by sweep trace S and data line D2; The 3rd sub-pixel P3 is defined by sweep trace S and data line D3.The first sub-pixel P1, the second sub-pixel P2 and the 3rd sub-pixel P3 are all positioned at a side of sweep trace S.The first sub-pixel P1 is between power lead VDD1 and VDD2; The second sub-pixel P2 is between power lead VDD2 and VDD3; The 3rd sub-pixel P3 is between power lead VDD3 and VDD4.
Each sub-pixel P1-P3 is further divided into two secondary sub-pixels by data line D1-D3 again.Particularly, the first sub-pixel P1 is divided into the first secondary sub-pixel 110 and the second secondary sub-pixel 120 by data line D1; The second sub-pixel P2 is divided into the 3rd secondary sub-pixel 130 and the 4th secondary sub-pixel 140 by data line D2; The 3rd sub-pixel P3 is divided into the 5th secondary sub-pixel 150 and the 6th secondary sub-pixel 160 by data line D3.The first secondary sub-pixel 110 to the 6th secondary sub-pixel 160 is spread configuration in parallel to each other, that is the first sub-pixel P1 in dot structure 100, the second sub-pixel P2 with the 3rd sub-pixel P3 respectively by the vertical separation of data line D1-D3.The first secondary sub-pixel 110 is all positioned at the same side of sweep trace S to the 6th secondary sub-pixel 160.
Material behaviors different in luminescent layer due to Organic Light Emitting Diode (OLED) can be brought different performance characteristics, for example, general in the situation that, the more shallow OLED material of color has preferably luminescence efficiency (under same current density, brightness is higher), and the darker OLED material of color has preferably chromaticity coordinate (color saturation).Therefore, the present invention just inserts respectively the luminescent material of different luminescence efficiencys and different colourities in two secondary sub-pixels of same sub-pixel, sees through the brightness ratio of adjusting bi-material, reaches the object of taking into account GTG tone, brightness and color saturation.
For instance, if the first sub-pixel P1, the second sub-pixel P2 and the 3rd sub-pixel P3 correspond respectively to tri-colors of RGB, the first secondary sub-pixel 110 in the first sub-pixel P1 can be peony, and the second secondary sub-pixel 120 can be light red; The 3rd secondary sub-pixel 130 in the second sub-pixel P2 can be bottle green, and the 4th secondary sub-pixel 140 can be light green color; The 5th secondary sub-pixel 150 in the 3rd sub-pixel P3 can be mazarine, and the 6th secondary sub-pixel 160 can be for light blue.
Aforesaid the first secondary sub-pixel 110 to the area of the 6th secondary sub-pixel 160 can be identical, or according to different design requirement adjustment and difference.In other words, in the secondary sub-pixel 110-160 in each sub-pixel P1-P3, the material of luminescent layer and area ratio can be identical or different, and the color of looking closely target shows and determines, and the art personnel can flexibly design according to actual demand.
AMOLED dot structure 100 also includes a plurality of switch modules, with so that electric current passes through the first secondary sub-pixel 110 to the 6th secondary sub-pixel 160, makes the first secondary sub-pixel 110 luminous to the 6th secondary sub-pixel 160.Switch module can, for driving thin film transistor (TFT) DTFT1-DTFT6, drive thin film transistor (TFT) DTFT1-DTFT6 respectively in order to drive the first secondary sub-pixel 110 to the 6th secondary sub-pixel 160.
In order to make the secondary sub-pixel 110-160 in sub-pixel P1-P3 effectively realize mixed light to reach the object of adjustable colors performance, the secondary sub-pixel 110-160 in each sub-pixel P1-P3 need to be driven simultaneously.For instance, the first secondary sub-pixel 110 and the second secondary sub-pixel 120 can be driven simultaneously, the 3rd secondary sub-pixel 130 and the 4th secondary sub-pixel 140 can be driven simultaneously, the 5th secondary sub-pixel 150 and the 6th secondary sub-pixel 160 can be driven simultaneously, make the color after the first sub-pixel P1, the second sub-pixel P2 and the 3rd sub-pixel P3 vision-control.
From the above, AMOLED dot structure 100 is except area ratio that see through to adjust material prescription in secondary sub-pixel 110-160 and secondary sub-pixel 110-160 is to provide the characteristics of luminescence that sub-pixel P1-P3 is different, also can, by changing the size that drives thin film transistor (TFT) DTFT1-DTFT6, change the luminosity of secondary sub-pixel 110-160.Therefore, drive the size of thin film transistor (TFT) DTFT1-DTFT6 to change according to different design requirements, and there is identical or different size.
If in sub-pixel P1-P3, the material behavior that has any one color mode ideal and that do not need to see through mixed light is adjusted color performance, and this sub-pixel can optionally add and contribute to increase brightness or the color of colour gamut, for example yellow.For example, if send the second sub-pixel P2 of green glow, there is the quite desirable luminescent material of performance to select, the 3rd secondary sub-pixel 130 wherein can directly adopt this green luminescent material, and the luminescent material that gold-tinted is sent in configuration in the 4th secondary sub-pixel 140 increases brightness or the effect of colour gamut to reach.
It is noted that, three data line D1-D3, four power lead VDD1-VDD4, sweep trace S and three sub-pixel P1-P3 (arranging explanation with 1*3 array way) in the present embodiment, have been illustrated illustratively, but the present invention is not as limit, this field knows that the knowledgeable can suitably change design according to demand, after this repeats no more conventionally.
Except by data line D1-D3, sub-pixel P1-P3 being vertically divided into a plurality of secondary sub-pixel 110-160, the sub-pixel P1-P3 of part is separated all or only separated to the configuration mode that can also see through other, below collocation embodiment illustrated.
With reference to Fig. 2, it illustrates the top view of another embodiment of AMOLED dot structure of the present invention.Two power lead VDD1, the VDD2 that includes sweep trace S in AMOLED dot structure 200, intersects with sweep trace S and be arranged in parallel, three data line D1, the D2, the D3 that intersect and be arranged in parallel with sweep trace S.Wherein power lead VDD1 is between data line D1 and D2, the adjacent arrangement of data line D2 and D3, and power lead VDD2 and VDD1 lay respectively at the relative both sides of data line D2 and D3.
The AMOLED dot structure 200 of the present embodiment includes the first sub-pixel P1, the second sub-pixel P2 and the 3rd sub-pixel P3.The first sub-pixel P1 is defined by sweep trace S and data line D1; The second sub-pixel P2 is defined by sweep trace S and data line D2; The 3rd sub-pixel P3 is defined by sweep trace S and data line D3.The first sub-pixel P1 is between data line D1 and power lead VDD1; The second sub-pixel P2 is between power lead VDD1 and data line D2; The 3rd sub-pixel P3 is between data line D3 and power lead VDD2.
It is a plurality of secondary sub-pixels that the first sub-pixel P1, the second sub-pixel P3 and the 3rd sub-pixel P3 are more scanned line S horizontal subdivision, and particularly, the first sub-pixel P1 is scanned line S and is divided into the first secondary sub-pixel 210 and the second secondary sub-pixel 220; The second sub-pixel P2 is scanned line S and is divided into the 3rd secondary sub-pixel 230 and the 4th secondary sub-pixel 240; The 3rd sub-pixel P3 is scanned line S and is divided into the 5th secondary sub-pixel 250 and the 6th secondary sub-pixel 260.Wherein the first secondary sub-pixel 210, the 3rd secondary sub-pixel 230 and the 5th secondary sub-pixel 250 are positioned at a side of sweep trace S, and the second secondary sub-pixel 220, the 4th secondary sub-pixel 240 and the 6th secondary sub-pixel 260 are positioned at the opposite side of sweep trace S.
The first secondary sub-pixel 210 to the 6th secondary sub-pixel 260 can configure according to different design requirements the luminescent material of the different characteristics of luminescences.For example, the first secondary sub-pixel 210 in the first sub-pixel P1 can be peony, and the second secondary sub-pixel 220 can be light red; The 3rd secondary sub-pixel 230 in the second sub-pixel P2 can be bottle green, and the 4th secondary sub-pixel 240 can be light green color; The 5th secondary sub-pixel 250 in the 3rd sub-pixel P3 can be mazarine, and the 6th secondary sub-pixel 260 can be for light blue.Or, the 3rd secondary sub-pixel 230 configuration green luminescent materials in the second sub-pixel P2, and the Yellow luminous material of the 4th secondary sub-pixel 240 configuration is to increase brightness and colour gamut.
AMOLED dot structure 200 also includes to drive a plurality of driving thin film transistor (TFT) DTFT1-DTFT6 of secondary sub-pixel 210-260.As previously mentioned, for making the certain mixed light of secondary sub-pixel 210-260, the first secondary sub-pixel 210 and the second secondary sub-pixel 220 need drive simultaneously, the 3rd secondary sub-pixel 230 and the 4th secondary sub-pixel 240 need drive simultaneously, and the 5th secondary sub-pixel 250 and the 6th secondary sub-pixel 260 need drive simultaneously.
AMOLED dot structure 200 can see through be adjusted the area ratio of material prescription in secondary sub-pixel 210-260 and secondary sub-pixel 210-260 to provide outside the characteristics of luminescence that sub-pixel P1-P3 is different, also can, by changing the size that drives thin film transistor (TFT) DTFT1-DTFT6, change the characteristics of luminescence of secondary sub-pixel 210-260.
With reference to Fig. 3, it illustrates the top view of the another embodiment of AMOLED dot structure of the present invention.Three power lead VDD1, VDD2 that include sweep trace S in AMOLED dot structure 300, intersect with sweep trace S and be arranged in parallel, VDD3, three data line D1, the D2, the D3 that intersect and be arranged in parallel with sweep trace S.Wherein power lead VDD1, VDD2, VDD3 and data line D1, D2, D3 are interconnected.
The AMOLED dot structure 300 of the present embodiment includes the first sub-pixel P1, the second sub-pixel P2 and the 3rd sub-pixel P3.The first sub-pixel P1 is defined by sweep trace S and data line D1; The second sub-pixel P2 is defined by sweep trace S and data line D2; The 3rd sub-pixel P3 is defined by sweep trace S and data line D3.The first sub-pixel P1 is between data line D1 and power lead VDD1; The second sub-pixel P2 is between data line D2 and power vd D2; The 3rd sub-pixel P3 is between data line D3 and power lead VDD3.
AMOLED dot structure 300 also can be according to different design requirements, only partitioned portion but not whole sub-pixels.For example, in the present embodiment, only the 3rd sub-pixel P3 is separated into the first secondary sub-pixel 310 and the second secondary sub-pixel 320, the first sub-pixel P1 and the second sub-pixel P2 and maintains original design.
In other words, the luminescent layer in AMOLED dot structure 300 has the luminescent material of homogeneous corresponding to the part of the first sub-pixel P1; Luminescent layer has the luminescent material of homogeneous corresponding to the part of the second sub-pixel P2; And luminescent layer is corresponding to the part of the 3rd sub-pixel P3, include further two kinds of luminescent materials that the characteristics of luminescence is different from the second secondary sub-pixel 320 corresponding to the first secondary sub-pixel 310.As previously mentioned, the light that the first secondary sub-pixel 310 sends from the second secondary sub-pixel 320 can be different but be the color of same colour system for the depth.Or the first secondary sub-pixel 310 and the second secondary sub-pixel 320 can send respectively the light of different colours.
In the present embodiment, be by the layout that changes sweep trace S, make sweep trace S in the section bending of the 3rd sub-pixel P3, and be the first secondary sub-pixel 310 and the second secondary sub-pixel 320 by the 3rd sub-pixel P3 horizontal subdivision.The first secondary sub-pixel 310 and the second secondary sub-pixel 320 lay respectively at the both sides of sweep trace S.
AMOLED dot structure 300 also includes to drive a plurality of driving thin film transistor (TFT) DTFT1-DTFT4 of the first sub-pixel P1, the second sub-pixel P2, the first secondary sub-pixel 310 and the second secondary sub-pixel 320, wherein in order to drive driving thin film transistor (TFT) DTFT3, the DTFT4 of the first secondary sub-pixel 310 and the second secondary sub-pixel 320 to drive simultaneously, to reach the light mixed light that the first secondary sub-pixel 310 and the second secondary sub-pixel 320 are sent, to adjust the object of GTG tone, brightness and the color saturation of demonstration.
AMOLED dot structure 300 can be only by the sub-pixel of part, as the 3rd sub-pixel P3, be divided into two secondary sub-pixels 310,320, outside area ratio through the material prescription in adjustment secondary sub-pixel 310,320 and secondary sub-pixel 310,320, also can, by changing the size that drives thin film transistor (TFT) DTFT3, DTFT4, change the characteristics of luminescence of secondary sub-pixel 310,320.
With reference to Fig. 4, it illustrates the AMOLED dot structure of the present invention top view of an embodiment again.The difference of the present embodiment and last embodiment is, the AMOLED dot structure 400 of the present embodiment only includes two power lead VDD1, VDD2, and the first sub-pixel P1 and the second sub-pixel P2 share power lead VDD1.The 3rd sub-pixel P3 sees through sweep trace S and is separated into the first secondary sub-pixel 410 and the second secondary sub-pixel 420.
As described in last embodiment, AMOLED dot structure 400 can be through the material prescription in adjustment secondary sub-pixel 410,420 and the area ratio of secondary sub-pixel 410,420, and by changing the size that drives thin film transistor (TFT) DTFT3, DTFT4, change the characteristics of luminescence of secondary sub-pixel 410,420.
In aforesaid embodiment, each sub-pixel in AMOLED dot structure is defined by a sweep trace and a data line, AMOLED dot structure sees through luminescent material, the light-emitting area ratio of secondary sub-pixel and the size that drives its driving thin film transistor (TFT), makes two secondary sub-pixels in single sub-pixel show the different characteristics of luminescences.Yet, in order further to promote the elasticity of the characteristics of luminescence of adjusting secondary sub-pixel, the invention allows for following examples, in AMOLED dot structure, adopt the design of two sweep traces.
With reference to Fig. 5, it illustrates the top view of the another embodiment of AMOLED dot structure of the present invention.Data line D1, D2, the D3 arranging and power lead VDD1, the VDD2 that intersects and be sequentially arranged in parallel with sweep trace S1, S2 include two sweep trace S1, S2 that are arranged in parallel, intersect with sweep trace S1, S2 and are sequentially arranged in parallel in AMOLED dot structure 500.Wherein power lead VDD1 is between data line D1 and D2, data line D2 and D3 disposed adjacent, and power lead VDD1 and VDD2 lay respectively at the relative both sides of data line D2 and D3.
The AMOLED dot structure 500 of the present embodiment includes the first sub-pixel P1, the second sub-pixel P2 and the 3rd sub-pixel P3.The first sub-pixel P1 is defined by two sweep trace S1, S2 and data line D1; The second sub-pixel P2 is defined by two sweep trace S1, S2 and data line D2; The 3rd sub-pixel P3 is defined by sweep trace S1, S2 and data line D3.Wherein the first sub-pixel P1 and the second sub-pixel P2 share power lead VDD1.
In the present embodiment, the first sub-pixel P1 includes the first secondary sub-pixel 510 and the second secondary sub-pixel 520, the first secondary sub-pixels 510 and the second secondary sub-pixel 520 respectively in abutting connection with sweep trace S1 and sweep trace S2.The second sub-pixel P2 includes the 3rd secondary sub-pixel 530 and the 4th secondary sub-pixel 540, the three secondary sub-pixels 530 and the 4th secondary sub-pixel 540 and is adjacent to respectively sweep trace S1 and sweep trace S2.The 3rd sub-pixel P3 includes the 5th secondary sub-pixel 550 and the 6th secondary sub-pixel 560, the five secondary sub-pixels 550 and the 6th secondary sub-pixel 560 and is adjacent to respectively sweep trace S1 and sweep trace S2.
In AMOLED dot structure 500, also comprise to drive the first secondary sub-pixel 510 to the driving thin film transistor (TFT) DTFT1-DTFT6 of the 6th secondary sub-pixel 560.Wherein the first secondary sub-pixel 510 and the second secondary sub-pixel 520 can be driven respectively or simultaneously, the 3rd secondary sub-pixel 530 and the 4th secondary sub-pixel 540 can be driven respectively or simultaneously, the 5th secondary sub-pixel 550 and the 6th secondary sub-pixel 560 can be driven respectively or simultaneously, adjust the color performance of the first sub-pixel P1, the second sub-pixel P2 and the 3rd sub-pixel P3 to reach mixed light.
AMOLED dot structure 500 is except area ratio that see through to adjust material prescription in secondary sub-pixel 510-560 and secondary sub-pixel 510-560 is to provide the characteristics of luminescence that sub-pixel P1-P3 is different, also can, by changing the size that drives thin film transistor (TFT) DTFT1-DTFT6, change the characteristics of luminescence of secondary sub-pixel 510-560.
In addition, because the sub-pixel P1-P3 of the present embodiment comprises two sweep trace S1, S2, so can provide different data voltage to individual other secondary sub-pixel, further adjust the characteristics of luminescence of secondary sub-pixel 510-560.For example, when sweep trace S1 opens, data line D1, D2, D3 can provide voltage to the first secondary sub-pixel 510, the 3rd secondary sub-pixel 530, the 5th secondary sub-pixel 550; When sweep trace S2 opens, data line D1, D2, D3 can provide another voltage to the second secondary sub-pixel 520, the 4th secondary sub-pixel 540 and the 6th secondary sub-pixel 560.Change by this and the characteristics of luminescence of adjusting secondary sub-pixel.
Lower list one is respectively and adopts the display of traditional AMOLED dot structure at gamma, to adjust brightness and the chroma data of front and back with table two.Brightness and the chroma data of the display of a table three AMOLED dot structure 400 for employing as Fig. 4 of the present invention after gamma adjusts.
Figure 2013105188900100002DEST_PATH_IMAGE001
Brightness and colourity before table one, traditional AMOLED display are not adjusted by gamma
Brightness and colourity after table two, traditional AMOLED display are adjusted by gamma
If table one is with as shown in table two, traditional AMOLED display is after adjusting by gamma, although gradating properties can meet display standard, but brightness declines significantly, never 320 nits before adjusting drop to 190 nits, luminance loss 40%, contrast 8000 before also never adjusting drops to 4750.Hence one can see that, is limited to the material behavior of OLED, and traditional AMOLED display certainly will be accepted or rejected to some extent between brightness, color saturation and contrast.
Table three, apply brightness and the colourity of AMOLED display one embodiment of the present invention
AMOLED display in table three is the AMOLED dot structure 400 of the embodiment of application Fig. 4 of the present invention, and wherein two of the 3rd sub-pixel P3 the first secondary sub-pixels 410 equate with the second secondary sub-pixel 420 areas, configure respectively sapphirine and skipper.From table three, can learn, adopt after design of the present invention, AMOLED display is after adjusting by gamma, and its brightness can maintain 364 nits, and contrast can be promoted to 9100, take into account the requirement of brightness, color saturation and contrast.
From above embodiment, can learn, AMOLED dot structure of the present invention configures dissimilar material properties in single sub-pixel, the different OLED luminescent material of luminescence efficiency difference or tone for example, the light mixed light sending through secondary sub-pixel is adjusted the GTG brightness of sub-pixel, makes display still can maintain preferably brightness after adjusting gamma.In two secondary sub-pixels in sub-pixel, configure the luminescent material of heterogeneity, the area ratio of two secondary sub-pixels can be for identical or different, or the size of the driving thin film transistor (TFT) that two secondary sub-pixels configure can be for identical or different.The light mixed light sending through secondary sub-pixel is adjusted the GTG brightness of sub-pixel.Single sub-pixel can also configure two scanning linears, further to promote the design flexibility of adjusting sub-pixel colors performance.What is more, in some cases, two secondary sub-pixels in sub-pixel can also configure the OLED luminescent material of different colours, as add yellow, to reach, increase brightness or the effect of augmentation colour gamut.
Although be to describe single sub-pixel is divided into two secondary sub-pixels in previous embodiment, but right and wrong are in order to limit the present invention, the art personnel also can, according to actual demand, be divided into single sub-pixel three or more secondary sub-pixel in the situation that process capability is permitted.
Although the present invention with embodiment openly as above; so it is not in order to limit the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, so protection scope of the present invention is when being as the criterion depending on the aforesaid claim person of defining.

Claims (11)

1. an active matrix organic LED dot structure, comprises:
A plurality of sub-pixels, at least one comprises two secondary sub-pixels those sub-pixels, and those secondary sub-pixels configure respectively the luminous organic material that the characteristics of luminescence is different, make those secondary sub-pixels send different light.
2. active matrix organic LED dot structure as claimed in claim 1, is characterized in that, respectively those secondary sub-pixels of this at least one sub-pixel are shared a data line and driven simultaneously.
3. active matrix organic LED dot structure as claimed in claim 1, is characterized in that, those secondary sub-pixels configure respectively the luminous organic material of different luminescence efficiencys or different colors tune.
4. active matrix organic LED dot structure as claimed in claim 1, is characterized in that, those secondary sub-pixels configure respectively the luminous organic material of different colours.
5. active matrix organic LED dot structure as claimed in claim 1, is characterized in that, respectively these two the secondary sub-pixel area in this at least one sub-pixel are identical.
6. active matrix organic LED dot structure as claimed in claim 1, is characterized in that, respectively two secondary sub-pixel area of this in this at least one sub-pixel are different.
7. active matrix organic LED dot structure as claimed in claim 1, is characterized in that, also comprises a plurality of driving thin film transistor (TFT)s, and in order to drive those secondary sub-pixels, wherein those drive the measure-alike of thin film transistor (TFT).
8. active matrix organic LED dot structure as claimed in claim 1, is characterized in that, also comprises a plurality of driving thin film transistor (TFT)s, and in order to drive those secondary sub-pixels, wherein those drive the size of thin film transistor (TFT) different.
9. active matrix organic LED dot structure as claimed in claim 1, is characterized in that, respectively those secondary sub-pixels in this at least one sub-pixel are to separate by a data line.
10. active matrix organic LED dot structure as claimed in claim 1, is characterized in that, respectively those secondary sub-pixels in this at least one sub-pixel are to separate by one scan line.
11. active matrix organic LED dot structures as claimed in claim 1, is characterized in that, respectively these at least one subpixel configuration one data line and two sweep traces, respectively corresponding those secondary sub-pixels of those sweep traces.
CN201310518890.0A 2013-10-29 2013-10-29 Active matrix organic light emitting diode pixel structure Pending CN103632634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310518890.0A CN103632634A (en) 2013-10-29 2013-10-29 Active matrix organic light emitting diode pixel structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310518890.0A CN103632634A (en) 2013-10-29 2013-10-29 Active matrix organic light emitting diode pixel structure

Publications (1)

Publication Number Publication Date
CN103632634A true CN103632634A (en) 2014-03-12

Family

ID=50213621

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310518890.0A Pending CN103632634A (en) 2013-10-29 2013-10-29 Active matrix organic light emitting diode pixel structure

Country Status (1)

Country Link
CN (1) CN103632634A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020075211A1 (en) * 2000-09-05 2002-06-20 Kabushiki Kaisha Toshiba Display apparatus and driving method thereof
CN1892734A (en) * 2005-07-04 2007-01-10 株式会社半导体能源研究所 Display device, electronic device and method of driving display device
CN101267701A (en) * 2007-03-14 2008-09-17 索尼株式会社 Display device, method for driving display device, and electronic apparatus
US20090121983A1 (en) * 2007-11-13 2009-05-14 Samsung Electronics Co., Ltd. Organic light emitting diode display and method for manufacturing the same
CN102386208A (en) * 2010-08-27 2012-03-21 乐金显示有限公司 Organic electroluminescent device
TW201301255A (en) * 2011-04-07 2013-01-01 Universal Display Corp Method for driving quad-subpixel display

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020075211A1 (en) * 2000-09-05 2002-06-20 Kabushiki Kaisha Toshiba Display apparatus and driving method thereof
CN1892734A (en) * 2005-07-04 2007-01-10 株式会社半导体能源研究所 Display device, electronic device and method of driving display device
CN101267701A (en) * 2007-03-14 2008-09-17 索尼株式会社 Display device, method for driving display device, and electronic apparatus
US20090121983A1 (en) * 2007-11-13 2009-05-14 Samsung Electronics Co., Ltd. Organic light emitting diode display and method for manufacturing the same
CN102386208A (en) * 2010-08-27 2012-03-21 乐金显示有限公司 Organic electroluminescent device
TW201301255A (en) * 2011-04-07 2013-01-01 Universal Display Corp Method for driving quad-subpixel display

Similar Documents

Publication Publication Date Title
US9343511B1 (en) Pixel arrangement structure for organic light-emitting diode
US10380930B2 (en) Heterogeneous light emitter display system
US9627449B2 (en) Pixel arrangement structure for organic light-emitting diode display
KR100892225B1 (en) Color display apparatus
CN103472608B (en) The pixel of display panel and subpixel configuration
US10147770B2 (en) Pixel structure having triangular red and green subpixels and rhombic blue subpixels
CN106097900B (en) Micro- LED display panel
CN103985735A (en) Display panel
EP2506238B1 (en) Electroluminescent display and method of driving same
WO2016192278A1 (en) Field sequential display panel, field sequential display device and driving method
CN104134683A (en) Transparent display panel
US9627451B2 (en) Pixel structure and display apparatus
CN103869569A (en) Display device
CN107359176A (en) A kind of organic electroluminescence display panel and display device
WO2019100420A1 (en) Display panel and display device having same
TWI404447B (en) Pixel structure of electroluminescent display panel
CN103545344A (en) Pixel structure, manufacturing method of pixel structure, light emitting device, array substrate and display device
CN103887323A (en) Display panel and display device thereof
US9754525B2 (en) Display panel and driving method thereof and display device
CN109785783B (en) Display panel
KR20180121292A (en) Light emitting diode display apparatus
CN112054046B (en) Display panel and display device
US9171501B2 (en) Amoled pixel structure with a subpixel divided into two secondary subpixels
CN114187862B (en) Display device and display device driving method
CN115188789A (en) Display pixel arrangement structure and display panel

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20140312