CN103631101B - Photoresistance stripper comprising fluorine-containing surfactant - Google Patents
Photoresistance stripper comprising fluorine-containing surfactant Download PDFInfo
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- CN103631101B CN103631101B CN201210301068.4A CN201210301068A CN103631101B CN 103631101 B CN103631101 B CN 103631101B CN 201210301068 A CN201210301068 A CN 201210301068A CN 103631101 B CN103631101 B CN 103631101B
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- 239000004094 surface-active agent Substances 0.000 title abstract description 17
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 title abstract description 16
- 239000011737 fluorine Substances 0.000 title abstract description 16
- 229910052731 fluorine Inorganic materials 0.000 title abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical class CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 20
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 222
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 16
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 9
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- 239000011651 chromium Substances 0.000 claims description 6
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- MTVLEKBQSDTQGO-UHFFFAOYSA-N 2-(2-ethoxypropoxy)propan-1-ol Chemical compound CCOC(C)COC(C)CO MTVLEKBQSDTQGO-UHFFFAOYSA-N 0.000 claims description 3
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- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 3
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- 125000001931 aliphatic group Chemical group 0.000 claims description 2
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- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000000392 cycloalkenyl group Chemical group 0.000 claims description 2
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims 1
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- YJLUBHOZZTYQIP-UHFFFAOYSA-N 2-[5-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NN=C(O1)CC(=O)N1CC2=C(CC1)NN=N2 YJLUBHOZZTYQIP-UHFFFAOYSA-N 0.000 description 1
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- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
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- SFMJNHNUOVADRW-UHFFFAOYSA-N n-[5-[9-[4-(methanesulfonamido)phenyl]-2-oxobenzo[h][1,6]naphthyridin-1-yl]-2-methylphenyl]prop-2-enamide Chemical compound C1=C(NC(=O)C=C)C(C)=CC=C1N1C(=O)C=CC2=C1C1=CC(C=3C=CC(NS(C)(=O)=O)=CC=3)=CC=C1N=C2 SFMJNHNUOVADRW-UHFFFAOYSA-N 0.000 description 1
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- SNGREZUHAYWORS-UHFFFAOYSA-N perfluorooctanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F SNGREZUHAYWORS-UHFFFAOYSA-N 0.000 description 1
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Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a kind of photoresistance stripper, it is included：(a) the weight % of 40 weight % 80 MEA；(b) the weight % of 18 weight % 58 N, N dimethyl acetamides；0.001 weight % 2 weight % fluorine-containing surfactant, wherein the weight % gross weight based on the photoresistance stripper (c).The photoresistance stripper of the present invention, which has, to be dissolved each other completely with water, does not have corrosivity for the electronic building brick using aluminum or aluminum alloy as line material, and to the advantage of environment hypotoxicity.In addition, the invention also discloses the method that the photoresistance stripper using the present invention removes photoresistance.
Description
Technical Field
The present invention relates to a photoresist stripper (photoresist stripper) containing alkyl alcohol amine, alkyl amide and fluorine-containing surfactant, and particularly relates to a photoresist stripper for removing positive photoresist used in semiconductors, liquid crystal displays, touch sensing screens and electronic books.
Background
The technology industry is continuously developing, and the technology of thin film transistor liquid crystal display (TFT-LCD) is more gradually evolving, and the TFT-LCD has advantages of small size, small power consumption, low radiation, and durable product, so the TFT-LCD has gradually replaced the display made by Cathode Ray Tube (CRT). Moreover, as the demand for the display device is increasing, the yield of the tft-lcd is gradually increasing, and following the evolution of the technology generation, the factory buildings of five generations, six generations, seven generations, eight generations and even ten generations are also continuously built, and the amount of money put into the tft-lcd is getting larger and larger, so that the future technological progress and the economic scale are expected to be very striking.
Photoresists, also known as photoresists, photoresists or photoresists, are a class of photosensitive materials used in many industrial manufacturing processes. For example, photolithography (also referred to as "photolithography" or "uv-blocking lithography") refers to the process of first patterning a photomask with geometric features and then transferring the geometric features on the photomask to a layer of photoresist overlying a substrate using exposure and development. This layer of photoresist is dissolved by a specific solution (developer) after exposure to light (typically ultraviolet light). The photoresist may be selectively irradiated (exposed) by irradiating light of a specific wavelength onto the photoresist through the photomask. The irradiated photoresist areas are then dissolved away using the aforementioned developer solution, and the pattern on the photomask is thus rendered on the photoresist. After the above steps are completed, the substrate may be subjected to selective etching or ion implantation processes, and the undissolved photoresist will protect the substrate from being altered during these processes. After the etching or ion implantation is completed, the final step of photolithography, i.e., the removal of the photoresist, is performed to perform other steps in the electronic device fabrication process.
Photoresists are generally classified into positive photoresists and negative photoresists. The positive photoresist refers to that the part of the photoresist irradiated (exposed) by light with a specific wavelength is dissolved in a photoresist developer, and the part which is not irradiated by light is not dissolved in the photoresist developer; negative photoresist refers to a photoresist developer solution that does not dissolve the irradiated portion of the photoresist, and does not dissolve the non-irradiated portion of the photoresist.
However, as the related industrial technologies have been continuously developed, the glass substrates used in the tft-lcd have been continuously increased, and the consumption of various chemicals has been continuously increased, so that besides a lot of money and resources are consumed, the chemicals generated in the tft-lcd manufacturing process also cause a considerable burden to the environment, and the spirit of environmental protection is also violated, so how to recover the chemicals reacted in the manufacturing process can not only reduce the production cost, but also improve the market competitiveness, and make a great contribution to environmental protection.
In the process of manufacturing a thin film transistor liquid crystal display, the photoresist stripper is used in a relatively large amount, so if the photoresist stripper can be recycled, the contribution to economic benefits and environmental protection is significant. The chemicals generated during the photoresist removal process mainly include water, residual photoresist stripper, photoresist and other substances generated during the reaction. However, in order to recycle the photoresist stripper, the recycling system adopted in the current tft-lcd factory uses various materials with different boiling points and uses distillation technology to recycle them, and the photoresist stripper is re-assembled according to the original ratio after recycling.
However, the composition of the known photoresist stripper is generally complicated, mostly consisting of 4-6 chemicals, and thus very difficult to recycle, and the photoresist stripper may be reconstituted after recycling through a very complicated reduction process. Therefore, it is not easy to achieve reasonable economic benefits in practical applications for recycling the known photoresist stripper, and the willingness of the factory to adopt a photoresist stripper recycling system is reduced, thereby not only losing the opportunity of reducing the cost, but also causing a considerable burden to the environment.
CN1219241C discloses a photoresist stripper composition comprising: 10-30 wt% of an amine compound; 20-60% by weight of a glycol solvent; 20-60 wt% of a polar solvent; and 0.01 to 3% by weight of a perfluoroalkylethylene oxide. The glycol solvent is actually glycol ether solvent.
KR10-0848107B1 discloses a photoresist stripper composition comprising an alcohol amine compound, an organic solvent, water and a nonionic fluorine-containing surfactant. More specifically, the photoresist stripper composition comprises 20-30 wt% of monoethanolamine, 50-66 wt% of N-methylpyrrolidone, 4-30 wt% of water, and 0.01-0.1 wt% of a non-ionic fluorine-containing surfactant.
In addition, since many of the known photoresist strippers have high volatility in their composition, they tend to have excessively high evaporation rates, thereby limiting the bath life of these photoresist strippers, and require special precautions for human and environmental safety during their storage and use.
However, the photoresist stripper having a simple composition available so far cannot completely remove the photoresist from various substrates. Very long residence times or repeated applications are often required to remove the coating completely.
Therefore, it is highly desirable to obtain a high-efficiency photoresist stripper which can completely remove photoresist, is free from line corrosion, has a low evaporation rate, is easily soluble in water, is non-toxic to the human body and environmentally compatible, and is easily recyclable. In addition, in addition to the process of manufacturing a Thin Film Transistor (TFT), a similar positive photoresist is used in the process of manufacturing a touch sensor panel (touch sensor panel) and an electronic book (e-book) or other handheld devices.
Disclosure of Invention
The invention relates to a photoresist stripping agent, which consists of two main components of Monoethanolamine (MEA) and N, N-dimethylacetamide (DMAc) and a small amount of fluorine-containing surfactant. The photoresist stripper can be easily stripped from the photoresist without damaging the exposed circuit system, especially the circuit system taking aluminum or aluminum alloy as the material, so the photoresist stripper has the advantage of being applicable to the aluminum preparation process. In addition, the photoresist stripper of the present invention has simple components, can be easily recovered by a fractionation technology, and can recombine, reduce and reuse the recovered photoresist stripper, thereby achieving the effects of reducing the production cost and protecting the environment.
In order to achieve the above-mentioned effects, the present invention provides a photoresist stripper, comprising:
(a) from about 40% to about 80% by weight monoethanolamine;
(b) about 18% to about 58% by weight of N, N-dimethylacetamide; and
(c) about 0.001 wt% to about 2 wt% fluorosurfactant;
wherein the photoresist stripper includes less than about 1 wt% of water and less than about 1 wt% of glycol ether based solvent, and the weight percentage is based on the total weight of the photoresist stripper.
In addition, the present invention also provides a method of removing photoresist from a surface of an electronic component, the method comprising the steps of:
i. providing an electronic component with a surface to be stripped of photoresist;
contacting the electronic component with the photoresist stripper of the present invention at a temperature of 40 ℃ to 80 ℃ for about 10 seconds to 15 minutes to expose the circuitry of the electronic component;
washing with water for about 5 seconds to 5 minutes; and
drying with inert gas.
By implementing the technical scheme of the invention, at least the following beneficial effects can be realized:
firstly, the photoresist stripper of the invention has no corrosiveness to aluminum or aluminum alloy, so the photoresist stripper is very suitable for being applied to the aluminum preparation process.
Secondly, because the photoresist stripping agent comprises a small amount of fluorine-containing surfactant, the photoresist stripping capacity and efficiency are greatly improved, so that the time and temperature in the film stripping process can be reduced, or the use amount of the stripping agent is reduced, and the effects of reducing cost, energy and carbon are achieved. In addition, when the temperature of the preparation process is reduced, the safety of the film stripping process is also increased.
Thirdly, because the photoresist stripper of the invention has simple components, low evaporation rate and complete mutual solubility with water, the used photoresist stripper can be easily recycled, thereby achieving the effects of reducing production cost and protecting environment.
So that those skilled in the art can readily understand the technical disclosure and practice the present invention, and can readily understand the objects and advantages associated with the present invention based on the disclosure, claims and drawings, the detailed features and advantages of the present invention will be described in detail in the detailed description.
Drawings
FIGS. 1 to 3 are schematic views showing an embodiment of a process flow for stripping a photoresist using an alkylamide stripper according to the present invention.
FIG. 4 is a graph showing the photoresist stripping ratios of example 2 of the present invention and comparative examples 1, 4 and 5 at a temperature of 40-80 ℃.
Description of the main Components
10 base plate
20 aluminum metal film
30 photo resist
Detailed Description
The present invention provides a positive photoresist stripper, which comprises: monoethanolamine; n, N-dimethylacetamide; and a minor amount of a fluorosurfactant.
The monoethanolamine, which is component (a) of the photoresist stripper of the present invention, can be represented by the following formula:
formula A
The CAS number of monoethanolamine is 141-43-5, and can also be represented by the formula C2H7NO or HOCH2CH2NH2Or MEA for short in english.
In the photoresist stripper of the present invention, the amount of monoethanolamine (a) is generally about 40 wt% to about 80 wt%, or about 45 wt% to about 75 wt%, or about 48 wt% to about 70 wt%, based on the total weight of the photoresist stripper.
In one embodiment, in the photoresist stripper of the present invention, the amount of monoethanolamine (a) is about 40 wt% to about 80 wt%, or about 45 wt% to about 75 wt%, or about 48 wt% to about 70 wt%, based on the total weight of the photoresist stripper.
The component (b), N-dimethylacetamide, of the photoresist stripper of the present invention can be represented by the following formula:
molecular formula B
The CAS number of N, N-dimethylacetamide is 127-19-5, and can also be represented by the formula C4H9NO or CH3C(=O)N(CH3)2Or DMAc for short in english.
In the photoresist stripper of the present invention, the amount of N, N-dimethylacetamide (b) is generally about 18 to about 58 wt%, or about 23 to about 54 wt%, or about 28 to about 50 wt%, based on the total weight of the photoresist stripper.
In one embodiment, in the photoresist stripper of the present invention, the amount of N, N-dimethylacetamide (b) is about 18 to about 58 wt%, or about 23 to about 54 wt%, or about 28 to about 50 wt%, based on the total weight of the photoresist stripper.
The fluorosurfactant suitable for use in the photoresist stripper of the present invention is a nonionic surfactant and has acid-base stability and low foaming. Preferably fluorinated aliphatic alcohol substituted polyoxyethylene compounds (fluorinated alcohol substituted ethoxylates). More preferably, the carbon chain length of the fluorinated fatty alcohol is less than or equal to 6, wherein the fluorinated fatty alcohol may be a partially or perfluorinated fatty alcohol. Because the fluorine-containing surfactant has low toxicity and environmental protection, and cannot be degraded to generate PFOA.
The photoresist stripper of the present invention, component (c) of which is a fluorosurfactant, is a compound having the following formula 1 or a mixture thereof:
Rf(OCH2CH2)nOH
1
wherein R isfIs a partially or perfluorinated aliphatic group having a total carbon number of less than or equal to 6 and selected from alkyl, alkenyl, cycloalkyl or cycloalkenyl; and n is an integer from 1 to 25.
A preferred example of such fluorosurfactants is DuPont (E).DuPont Co.) under the trade nameSuch as FS-3100, FS-31.
In the photoresist stripper of the present invention, the amount of the fluorosurfactant (c) is generally about 0.001 wt% to about 2.0 wt%, or about 0.003 wt% to about 1 wt%, or about 0.005 wt% to about 0.5 wt%, based on the total weight of the photoresist stripper.
In one embodiment, in the photoresist stripper of the present invention, the amount of the fluorosurfactant (c) is about 0.001 wt% to about 2.0 wt%, or about 0.003 wt% to about 1 wt%, or about 0.005 wt% to about 0.5 wt%, based on the total weight of the photoresist stripper.
Since the photoresist stripper of the present invention has greatly improved photoresist stripping ability and efficiency by containing a small amount of a fluorine-containing surfactant in addition to two main components of (a) Monoethanolamine (MEA) and (b) N, N-dimethylacetamide (DMAc), the photoresist stripper of the present invention basically does not need to add other components such as water or glycol ether solvents; particularly when these other components may reduce the photoresist stripping ability or increase the complexity of the recycling process. However, the components of the photoresist stripper of the present invention do not need to use high purity grade raw materials, or need to be dehydrated and rectified respectively to remove trace moisture or impurities contained therein.
In some embodiments of the present invention, the amount of water contained in the photoresist stripper of the present invention is less than about 1 wt%, or less than about 0.5 wt%, or less than about 0.1 wt%, or equal to 0 wt%, based on the total weight of the photoresist stripper.
Common glycol ether solvents in general include ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol butyl ether, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, dipropylene glycol methyl ether, dipropylene glycol ethyl ether, dipropylene glycol butyl ether, and the like.
In some embodiments of the present invention, in the photoresist stripper of the present invention, the amount of the glycol ether-based solvent is less than about 1 wt%, or less than about 0.5 wt%, or less than about 0.1 wt%, or equal to 0 wt%, based on the total weight of the photoresist stripper, wherein the glycol ether-based solvent is selected from the group consisting of ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol butyl ether, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, dipropylene glycol methyl ether, dipropylene glycol ethyl ether, and dipropylene glycol butyl ether.
One embodiment of the present invention is a photoresist stripper of the present invention comprising (a) about 45 wt% to about 75 wt% monoethanolamine; (b) about 23% to about 54% by weight of N, N-dimethylacetamide; and (c) from about 0.003 wt% to about 1 wt% of a fluorosurfactant; wherein the weight percent is based on the total weight of the photoresist stripper.
In another embodiment, the photoresist stripper of the present invention comprises (a) about 48 wt% to about 70 wt% monoethanolamine; (b) about 28% to about 50% by weight of N, N-dimethylacetamide; and (c) from about 0.001 wt% to about 2 wt% of a fluorosurfactant; wherein the weight percent is based on the total weight of the photoresist stripper.
The photoresist stripper of the present invention can be easily prepared by mixing the components at room temperature. The components of the photoresist stripper of the present invention are commercially available without the need to use high purity grade raw materials, or to remove trace amounts of moisture or impurities contained therein by dehydration and rectification, respectively.
The light resistance stripping agent is suitable for electronic components which take aluminum, aluminum alloy, chromium, silicon nitride or indium tin oxide and the like as line materials; electronic components with aluminum or aluminum alloys as the wiring material are preferred. Here, the aluminum alloy refers to an aluminum alloy containing 90 wt% or more of aluminum and containing 10 wt% or less of at least one of other elements, such as Sn, Ag, Mg, Ni, Co, Cr, Cu, Zn, Mn, Ni, Fe, Ti, Li, Mo, Si, or the like.
The photoresist stripper is suitable for removing the photoresist to be stripped on the surface of an electronic component, wherein the electronic component is a transparent insulating substrate (transparent insulating substrate), a gate electrode (gate electrode), a gate insulating layer (gate insulating layer), a semiconductor layer (semiconductor layer), a source electrode (source electrode), a drain electrode (drain electrode), a color filter (color filter), an insulating film (insulating film), a low-temperature polycrystalline silicon substrate (low-temperature polysilicon substrate), a touch panel array electrode (array electrode) or the like.
One embodiment of the invention is that the photoresist stripper is used for removing the photoresist to be stripped on the surface of an electronic component and also comprises photoresist residues; wherein the photoresist residue is the photoresist residue of a positive photoresist after exposure, development and ion implantation; the electronic component is a transparent insulating substrate, a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, a color filter, an insulating film, a low-temperature polycrystalline silicon substrate or a touch panel array type electrode. The circuit of the electronic component is made of materials such as aluminum, aluminum alloy, chromium, silicon nitride or indium tin oxide; preferably consisting of aluminium or an aluminium alloy.
As shown in fig. 1 to 3, it is used to explain a specific process of the photoresist stripper of the present invention for stripping the residual photoresist 30 in the aluminum preparation process. However, the application of the photoresist stripper of the present invention is not limited to the aluminum preparation process.
As shown in fig. 1, in the aluminum manufacturing process, a metal thin film 20 of aluminum or an aluminum alloy may be disposed on a substrate 10, and a photoresist 30 is coated on the metal thin film 20, and the photoresist 30 is patterned (patterned) using an exposure apparatus so that the photoresist 30 may be used as a mask. Then, as shown in fig. 2, the metal film 20 not covered by the photoresist 30 is etched and stripped by etching, thereby fabricating a metal wiring of aluminum or aluminum alloy.
Finally, as shown in fig. 3, the photoresist stripper of the present invention can be used to strip the photoresist 30 remaining on the metal film 20, and since the photoresist stripper of the present invention has no corrosiveness to aluminum or aluminum alloy, the metal line of aluminum or aluminum alloy can be protected from being damaged when the remaining photoresist 30 is removed, thereby reducing the resistance-capacitance Delay (RC-Delay) effect of the electronic device.
The photoresist stripper of the present invention is used by contacting a photoresist material and/or a Side Wall Polymer (SWP) with the photoresist stripper of the present invention. The actual conditions (i.e., temperature, time, etc.) will depend on the nature and thickness of the photoresist and/or sidewall polymer to be removed, as well as other factors known to those skilled in the art.
Generally, the photoresist stripping conditions are that an electronic component having a photoresist to be stripped on the surface is contacted (e.g., sprayed or soaked) with the photoresist stripper of the present invention at a temperature of 40-80 ℃ for about 10 seconds-15 minutes to expose the circuit of the electronic component; washing (e.g., spraying or soaking) with water for about 5 seconds to 5 minutes; the electronic assembly is then dried with an inert gas.
Exemplary photoresists are organic polymeric materials including electron beam resists, X-ray resists, ion beam resists, and the like. Examples of such organic polymeric materials include phenolic resins (p-vinylphenol), poly (p-vinylphenol), polymethylmethacrylate, polydimethyglutanimide, and derivatives or copolymers thereof, and the like, examples of etched or plasma treated photoresist residues and/or sidewall polymers include, inter alia, metal organic compounds and/or inorganic salts, oxides, hydroxides, or sidewall residues that can form films or composites either alone or in combination with the organic polymeric material of the photoresist material.
Furthermore, the present invention provides a method for removing photoresist from a surface of an electronic component, the method comprising the steps of: contacting an electronic component comprising a photoresist to be stripped with the photoresist stripper of the present invention at a temperature of 40-80 ℃ for about 10 seconds to about 15 minutes to remove the photoresist and expose the circuitry of the electronic component; washing with water for about 5 seconds to about 5 minutes; and drying with an inert gas. The method as described above, wherein the material of the wiring of the electronic component is composed of aluminum, an aluminum alloy, chromium, silicon nitride, or indium tin oxide.
One embodiment of the method of the present invention is to contact a photoresist stripper comprising monoethanolamine in an amount of about 40 wt% to about 80 wt%, N-dimethylacetamide in an amount of about 18 wt% to about 58 wt%, and a fluorosurfactant in an amount of about 0.001 wt% to about 2 wt% at a temperature of 40-80 ℃ with an electronic component having a photoresist to be stripped on the surface thereof for about 10 seconds to about 15 minutes to strip the photoresist and expose the circuitry of the electronic component; washing with water for about 5 seconds to about 5 minutes; and drying with an inert gas.
The photoresist stripping agent can effectively increase the photoresist stripping speed, thereby increasing the overall production speed and reducing the unit production cost. In the production process, if the speed of stripping the photoresist is not required to be increased due to the limitation of the machine or the whole process, the amount of liquid medicine sprayed by the machine can be reduced, or the film stripping temperature can be reduced, and the effects of reducing the production cost and increasing the safety can be achieved.
The photoresist stripper of the invention can be used in the preparation process of a liquid crystal display or a semiconductor component, and can be particularly applied to removing photoresist residues in the preparation process of the liquid crystal display or the semiconductor component containing aluminum or aluminum alloy because the photoresist stripper has no corrosivity to the aluminum or aluminum alloy.
In addition, because the photoresist stripper of the invention only contains two main organic components of monoethanolamine and N, N-dimethylacetamide besides a small amount of fluorine-containing surfactant, the photoresist stripper can be easily separated from the reaction waste liquid and recovered by distillation technology after the stripping process is finished, and the photoresist stripper can be easily recombined and reduced according to the original proportion after being recovered, thereby reusing the recovered photoresist stripper to achieve the effects of reducing the production cost and protecting the environment.
The photoresist stripper of the present invention is particularly useful and advantageous for a variety of reasons, including the following. The stripping agent of the invention can be completely dissolved with water, has no corrosivity and basically has no toxicity to the environment. The evaporation rate is lower than that of the known stripping agent, and the stripping agent can be recycled for multiple times without complicated safety precaution measures. Meanwhile, the solid waste of the stripped coating can be taken out at any time, and the solid waste is convenient to collect and treat. The stripping agent has better stripping effect at the same working temperature. In addition, the stripping agent of the invention has simple and easy preparation, only needs to mix the main components at room temperature, and does not need special safety precaution to people or environment.
The invention will now be illustrated in more detail by the following examples, which are not intended to limit the invention in any way.
Examples
Materials:
monoethanolamine (MEA): purchased from eastern union chemical corp.
N, N-dimethylacetamide (DMAc): purchased from Jiangshan chemical Co., Ltd.
Fluorosurfactant (FS): a nonionic fluorosurfactant available from E.I. DuPont under the trade name of a fluorinated fatty alcohol-substituted polyoxyethylene compound is usedFS-3100。
Positive type resist: model Echem TM120SL, available from New materials Inc. (ehem solutions Corp.).
Water: deionized water was used.
Preparation of a test photoresist sheet:
a5 cm x5 cm glass slide was cleaned with detergent and water and dried, and the weight was accurately weighed. The positive photoresist is uniformly coated on a glass sheet by a spin coater, and is put into an oven at 90 ℃ for baking for 30 minutes, the temperature is raised to 150 ℃, and the baking is continued for 1 hour. And taking out the photoresist from the oven, placing the photoresist in a drying oven, and accurately weighing the photoresist after the photoresist is cooled to room temperature. The completed test resist sheet was prepared to have a resist film weight of about 50mg and a film thickness of about 1 μm.
Stripping experiment:
monoethanolamine, N-dimethylacetamide and a fluorine-containing surfactant are sequentially added into a 1L beaker according to the proportion of each example and comparative example in the table, and after uniform stirring, the required stripping agent is obtained. Because the concentration of the fluorine-containing surfactant is low, accurate sampling is not easy, so that a diluted solution in N, N-dimethylacetamide is prepared firstly, and then the required proportion is calculated and added into a beaker, so that the accurate concentration proportion can be obtained.
The stripper is heated to a predetermined test temperature. The prepared test photoresist sheet was placed on a frame made of tetrafluoroethylene material, and the entire frame was immersed in a beaker containing a stripping agent. After 3 minutes (or the indicated time), the whole rack is taken up and immersed for 5 seconds in a beaker containing 1L of water. The whole frame was then taken out, the test photoresist sheet was held up with tweezers, laid flat on an iron net frame, and placed in a high temperature oven and baked at 150 ℃ for 1 hour to remove the excess stripper. The weight of the glass sheet after stripping was accurately weighed, and the photoresist stripping ratio was calculated according to the following formula.
TABLE 1
Film peeling effect at A.60 DEG C
The test results obtained using a photoresist-coated glass plate as a basis for the strength of the stripping ability of the photoresist stripper, DMAc (50%) + MEA (50%) as comparative example 1, and fluorosurfactants added in different proportions as examples 1-7 at 60 c for 3 minutes were shown in table 2.
Examples 1-7 all had better photoresist stripping capabilities than comparative example 1. It is shown that the fluorosurfactant provides a substantial improvement in the photoresist stripping capability of the stripper. Examples 2-5 have significantly improved photoresist stripping capabilities, showing that the fluorosurfactant has the best enhancement of photoresist stripping capabilities over a range of concentrations. Without being limited to the correctness of theory, when the concentration of the fluorine-containing surfactant contained in the photoresist stripper is higher than 0.001%, the photoresist stripping capability of the photoresist stripper is improved because the fluorine-containing surfactant can effectively reduce the surface tension, reduce the contact angle between the photoresist stripper and the photoresist, increase the permeation speed of the photoresist stripper and increase the concentration of the fluorine-containing surfactant. However, when the concentration of the fluorosurfactant is equal to or higher than 2%, the fluorosurfactant covers the photoresist, thereby preventing the photoresist stripper from coming into direct contact with the photoresist, and reducing the stripping ability of the photoresist stripper.
One embodiment of the present invention is a photoresist stripper of the present invention comprising (a) about 40 wt% to about 80 wt% monoethanolamine; (b) about 18% to about 58% by weight of N, N-dimethylacetamide; and (c) from about 0.003 wt% to about 1 wt% of a fluorosurfactant; wherein the weight percent is based on the total weight of the photoresist stripper.
Another embodiment of the present invention is a photoresist stripper of the present invention comprising (a) about 40 wt% to about 80 wt% monoethanolamine; (b) about 18% to about 58% by weight of N, N-dimethylacetamide; and (c) from about 0.005% to about 0.5% by weight of a fluorosurfactant; wherein the weight percent is based on the total weight of the photoresist stripper.
TABLE 2
| Fluorinated surfactant (% by weight) | Photoresist stripping ratio (%) | |
| Comparative example 1 | 0 | 72% |
| Example 1 | 0.001 | 76% |
| Example 2 | 0.005 | 100% |
| Example 3 | 0.01 | 97% |
| Example 4 | 0.02 | 97% |
| Example 5 | 0.1 | 97% |
| Example 6 | 1 | 82% |
| Example 7 | 2 | 78% |
Stripping temperature was 60 ℃ and stripping time was 3 minutes.
B.stripping effect at 40-80 deg.C
Because the photoresist stripping agent of the invention is added with a small amount of fluorine-containing surfactant, the capability and the efficiency of removing the photoresist can be greatly improved, thereby achieving the effects of reducing the cost, saving energy and reducing carbon by reducing the time and the temperature in the film stripping process or reducing the consumption of the stripping agent. Therefore, the results of selecting examples 2-5 having a photoresist stripping ratio higher than 90%, comparing the stripping effects at a temperature range of 40-80 ℃ are shown in Table 3.
TABLE 3
| Film peeling temperature (. degree. C.) | 40℃ | 50℃ | 60℃ | 70℃ | 80℃ |
| Comparative example 1 | 14% | 44% | 72% | 95% | 100% |
| Example 2 | 34% | 62% | 100% | 100% | 100% |
| Example 3 | 31% | 60% | 97% | 100% | 100% |
| Example 4 | 29% | 58% | 97% | 99% | 100% |
| Example 5 | 27% | 59% | 97% | 99% | 100% |
The percentages in the table are photoresist stripping ratios (%)
The photoresist strip ratios of examples 2-5 were relatively close at the same temperature in the temperature range of 40-60 ℃; but all showed a significant improvement over the photoresist strip ratio of comparative example 1.
C. Effect of Water and fluorosurfactant on stripping Effect
Korean patent (KR-848107B1) discloses that in its stripper system, water and fluorosurfactant are present together to give the best stripping effect. However, the photoresist stripper of the present invention is experimentally verified to have the effect of not enhancing the stripping ability but reducing the stripping ability by adding water, and the results are shown in table 4 and fig. 4.
TABLE 4
The percentages in the table are photoresist stripping ratios (%)
From the results of Table 4, it can be seen that the photoresist stripping ability of comparative example 2 and comparative example 5 is much better in the temperature range of 50 to 70 deg.C, and example 2 containing no water. Likewise, comparing the photoresist stripping capabilities of comparative example 1 and comparative example 4, comparative example 4 also performed less well than comparative example 1 without water. Meanwhile, it is also found from the results of table 4 that the presence of a small amount of fluorosurfactant improves the photoresist stripping ability of both example 2 and comparative example 5; the lift was more in the anhydrous state (comparative example 2 and comparative example 1) and less in the hydrated state (comparative example 5 and comparative example 4). It is thus confirmed from the results of Table 4 that the addition of water does not enhance the photoresist stripping ability of the photoresist stripper of the present invention, but rather decreases the photoresist stripping ability.
In addition, if a photoresist stripping capability of 100% is required, the use of the stripper of comparative example 1 needs to be performed at 80 ℃ for the same contact (soaking) time, while the use of the stripper of example 2 can lower the stripping temperature to 60 ℃. Similarly, it can also be inferred from the correspondence of fig. 4 using interpolation that the stripper of example 2 can lower the stripping temperature to about 52-53 c if the same photoresist stripping capability as that of the stripper of comparative example 1 at 60 c is to be achieved. Therefore, when the photoresist stripping capability of the photoresist stripper is increased, the advantages of cost reduction, energy saving and carbon reduction can be provided by reducing the stripping temperature, and the safety of the whole production process is relatively increased due to the reduction of the temperature.
When the ratio of the main components contained in the photoresist stripper of the present invention is changed, the same conclusion as above can be drawn by comparing the experimental results (see table 5).
TABLE 5
The percentages in the table are photoresist stripping ratios (%)
D. Minimum time required for complete photoresist stripping
Evaluating the stripping ability of a photoresist stripper in a stripping process, in addition to completely stripping the photoresist to the extent that no photoresist remains and no photoresist remains after tack-back, it is also an important efficiency consideration to be able to completely strip the photoresist in a minimum amount of time.
Experimental tests have shown that, at the same temperature, the inventive examples have a shorter time to completely strip the photoresist than the corresponding comparative examples, and the test results are shown in table 6, wherein the time is given in seconds(s), and the time difference is calculated from the time to completely strip the photoresist as compared to the time of comparative example 1.
TABLE 6
It can be shown from the results of Table 6 that examples 2 and 5 containing a small amount of fluorosurfactant can strip the entire resist film cleanly in a short time at a temperature range of 50-70 deg.C, while comparative examples 4 and 5 containing water significantly reduce the resist stripping rate.
As can be seen from the comparative experiments of the above examples and comparative examples, the photoresist stripper of the present invention can effectively increase the photoresist stripping rate, thereby increasing the overall production rate and reducing the unit production cost. In the production process, if the machine or the whole flow is limited, the photoresist stripping speed is not required to be as fast as this, the application amount of the machine for spraying the stripping agent can be reduced, or the film stripping temperature can be reduced, and the effects of reducing the production cost and increasing the safety can still be achieved.
While the invention has been illustrated and described in typical embodiments, it is not intended to be limited to the details shown, since various modifications and substitutions are possible without departing in any way from the spirit of the present invention. Accordingly, while modifications and equivalents of the invention herein disclosed may occur to persons skilled in the art using no more than routine experimentation, all such modifications and equivalents are believed to be within the spirit and scope of the invention as defined by the following claims.
Claims (10)
1. A photoresist stripper comprises the following components:
(a) 40-80% by weight monoethanolamine;
(b) 18-58% by weight of N, N-dimethylacetamide;
(c)0.001 wt% to 2 wt% of a fluorosurfactant;
(d)0 wt% to less than 1 wt% water; and
(e)0 to less than 1% by weight of glycol ether solvent, wherein the glycol ether solvent is selected from the group consisting of ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol butyl ether, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, dipropylene glycol methyl ether, dipropylene glycol ethyl ether and dipropylene glycol butyl ether,
wherein the weight percent is based on the total weight of the photoresist stripper,
wherein the fluorosurfactant is a compound of formula 1 or a mixture thereof:
Rf(OCH2CH2)nOH
1
wherein,
Rfis a partially or perfluorinated aliphatic group having a total carbon number of less than or equal to 6 and selected from alkyl, alkenyl, cycloalkyl and cycloalkenyl groups; and
n is an integer from 1 to 25.
2. The photoresist stripper of claim 1, used to remove photoresist from a surface of an electronic component to expose a circuit of the electronic component.
3. The photoresist stripper of claim 2, wherein the photoresist is an organic polymeric material selected from the group consisting of phenolic resin, poly (p-vinylphenol), polymethylmethacrylate, polydimethylglutarimide, and derivatives and copolymers thereof.
4. The photoresist stripper of claim 2, wherein the material of the wire is comprised of aluminum, aluminum alloy, chromium, silicon nitride or indium tin oxide.
5. The photoresist stripper of claim 2, wherein the electronic component is a transparent insulating substrate, a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, a drain electrode, a color filter, an insulating film, a low temperature poly-silicon substrate, or a touch panel array electrode.
6. A method of removing photoresist from a surface of an electronic component, the method comprising the steps of:
i. providing an electronic component with a surface to be stripped of photoresist;
contacting the electronic component with the photoresist stripper of claim 1 at a temperature of 40 ℃ to 80 ℃ for 10 seconds to 15 minutes to expose the circuitry of the electronic component;
washing with water for 5 seconds to 5 minutes; and
drying with inert gas.
7. The method of claim 6, wherein the contacting is spraying or soaking.
8. The method of claim 6, wherein the photoresist is an organic polymeric material selected from the group consisting of phenolic resins, poly (p-vinylphenol), polymethylmethacrylate, polydimethylglutarimide, and derivatives and copolymers thereof.
9. The method of claim 6, wherein the material of the line is comprised of aluminum, aluminum alloy, chromium, silicon nitride, or indium tin oxide.
10. The method of claim 6, wherein the electronic component is a transparent insulating substrate, a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, a color filter, an insulating film, a low temperature poly-silicon substrate, or a touch panel array electrode.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210301068.4A CN103631101B (en) | 2012-08-22 | 2012-08-22 | Photoresistance stripper comprising fluorine-containing surfactant |
| TW102129624A TWI612397B (en) | 2012-08-22 | 2013-08-19 | Photoresist strippers comprising fluorosurfactants |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210301068.4A CN103631101B (en) | 2012-08-22 | 2012-08-22 | Photoresistance stripper comprising fluorine-containing surfactant |
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| CN103631101B true CN103631101B (en) | 2018-01-09 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4770713A (en) * | 1986-12-10 | 1988-09-13 | Advanced Chemical Technologies, Inc. | Stripping compositions containing an alkylamide and an alkanolamine and use thereof |
| CN1789400A (en) * | 2004-11-30 | 2006-06-21 | 气体产品与化学公司 | Compositions comprising tannic acid as corrosion inhibitor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6268323B1 (en) * | 1997-05-05 | 2001-07-31 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
| JP4625842B2 (en) * | 2004-08-03 | 2011-02-02 | マリンクロッド・ベイカー・インコーポレイテッド | Cleaning compositions for microelectronic substrates |
| WO2006110645A2 (en) * | 2005-04-11 | 2006-10-19 | Advanced Technology Materials, Inc. | Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices |
| US20120073607A1 (en) * | 2010-09-27 | 2012-03-29 | Eastman Chemical Company | Polymeric or monomeric compositions comprising at least one mono-amide and/or at least one diamide for removing substances from substrates and methods for using the same |
-
2012
- 2012-08-22 CN CN201210301068.4A patent/CN103631101B/en not_active Expired - Fee Related
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4770713A (en) * | 1986-12-10 | 1988-09-13 | Advanced Chemical Technologies, Inc. | Stripping compositions containing an alkylamide and an alkanolamine and use thereof |
| CN1789400A (en) * | 2004-11-30 | 2006-06-21 | 气体产品与化学公司 | Compositions comprising tannic acid as corrosion inhibitor |
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| TWI612397B (en) | 2018-01-21 |
| TW201409190A (en) | 2014-03-01 |
| CN103631101A (en) | 2014-03-12 |
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