CN103628137A - Method for preparing calcium doped REBCO (rare earth barium copper oxygen) high temperature superconductivity standard single crystal - Google Patents
Method for preparing calcium doped REBCO (rare earth barium copper oxygen) high temperature superconductivity standard single crystal Download PDFInfo
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Abstract
The invention discloses a method for preparing calcium doped REBCO (rare earth barium copper oxygen) high temperature superconductivity standard single crystal. The method comprises steps of a) preparing powder of RE123 phase; b) preparing a precursor; c) putting a seed crystal on the upper surface of the precursor; and d) putting the precursor and the seed crystal in a crystal growth furnace for fusing the texture so as to grow a high temperature superconductivity material, wherein the precursor in step b) is a cylindrical precursor formed through uniformly mixing the powder of RE123 phase obtained in step a) according to the proportion of RE123+(0-15)wt%CaCO3+(0.3-1.5)wt%CeO2 and then pressing. According to the method, the calcium doped REBCO high temperature superconductivity standard single crystal is prepared through fusing the texture of top seed crystal, in the preparation process, the CaCO3 only needs to be mixed in the precursor powder so as to be pressed into the cylindrical precursor. The method is simple, easy to operate, completely repeatable and controllable.
Description
Technical field
The present invention relates to high temperature superconducting materia, relate in particular to a kind of method of preparing the accurate single crystal of REBCO high-temperature superconductor of calcium doping.
Background technology
From REBa
2cu
3o
xsince (being called for short REBCO, RE123, RE, Ba and Cu oxide, wherein RE=Y, Gd, Sm, Nd etc.) superconductor is found, just caused people's extensive concern.Due to it, have the characteristics such as perfect diamganetism, high critical current densities and high frozen magnetic field, REBCO superconductor has many potential application at aspects such as magnetic suspension force, magnetic bearing, flywheel energy storage and permanent magnet.
For further scientific effort transitivity, analyze, the REBCO high-temperature superconductor of chemical element doping is significant.This is because the Basic Mechanism of element doping and fundamental research are not also systems very.For example: location and the existing way of doped element in REBCO matrix; The impact of hotchpotch intrinsic property on weave construction and superconductivity; Hotchpotch lacks cognation to researchs such as the impacts of the behavior of solidifying, is difficult to understand the theory essence of doping.In addition the time that high temperature superconducting materia is studied is relatively short, and many Basic Mechanisms are also not very clear, so Study of effects of doping is necessary to carry out further investigated.It all has far reaching significance to the research performance of REBCO and the relation of structure with discussion high-temperature superconductor mechanism.And the REBCO single crystal of preparing highly doped amount is above scientific research important prerequisite.
The method that tradition is prepared REBCO single crystal is to utilize top seed crystal lifting method (TSSG), and this method is difficult to growing large-size doped samples.Its limitation is mainly reflected in the dependence for crucible, for example, in TSSG process of growth, apply Y
2o
3during crucible, the wetting property having had due to the Ba-Cu-O liquid after element doping and crucible makes liquid be easy to climb out of crucible, cannot carry out large size growth.As use instead and the nonwettable crucible of liquid, for example Al
2o
3crucible, the pollution that can produce Al element in process of growth.
Therefore, those skilled in the art be devoted to develop a kind of novel prepare calcium doping the method for the accurate single crystal of REBCO high-temperature superconductor, pollution-free, fast growth.
Summary of the invention
Because the above-mentioned defect of prior art, technical problem to be solved by this invention is to provide a kind of method that adopts top seed crystal melting texture to prepare the accurate single crystal of REBCO high-temperature superconductor of calcium doping, overcomes crystal pulling method in prior art and depends on the defects such as pollution that crucible, the speed of growth are slow, have other elements.
For achieving the above object, the invention provides a kind of method of preparing the accurate single crystal of REBCO high-temperature superconductor of calcium doping, comprise following operation:
A) prepare the powder of RE123 phase;
B) prepare presoma;
C) seed crystal is placed on to the upper surface of presoma;
D) presoma and seed crystal are placed in to growth furnace and carry out melting texture growing high temperature superconducting materia; Wherein, the presoma operation b) is that the powder of the RE123 phase that a) obtains of operation is by RE123+(0～15) wt%CaCO
3+ (0.3～1.5) wt%CeO
2ratio mix, the cylindrical presoma that forms of compacting.
Further, operation a) comprising:
According to the ratio of RE:Ba:Cu=1:2:3 by RE
2o
3, BaCO
3mix with CuO powder, obtain the Precursor Powder of RE123 phase;
After the Precursor Powder of RE123 phase is ground, in air 900 ℃ of sintering 48 hours and repeat 3 times this grind, sintering process.
Further, operation a) in, the diameter of presoma is 15～30mm.
Further, operation d) in, RE123+(0～15) wt%CaCO
3+ (0.3～1.5) wt%CeO
2ratio refer to: RE123, CaCO
3and CeO
2mass ratio be 1:(0～15) %:(0.3～1.5) %.
Further, melting texture growing operation d) comprises the following steps: make the temperature in growth furnace within the very first time, rise to the first temperature; Be incubated 2～5 hours; Make the temperature in growth furnace within the second time, rise to the second temperature; Be incubated 1～2 hour; Make the temperature in growth furnace within the 3rd time, be down to the 3rd temperature; Make the temperature in growth furnace within the 4th time, be down to the 4th temperature; Make the temperature in growth furnace within the 5th time, be down to the 5th temperature; Make the temperature in growth furnace within the 6th time, be down to the 6th temperature; Finally quench, obtain the accurate single crystal of REBCO high-temperature superconductor of calcium doping.
Further, the very first time is 3～5 hours, and the first temperature is 900 ℃～950 ℃; The second time was 1～2 hour, and the second temperature is higher than 30～80 ℃ of the Peritectic Reaction temperature of the accurate single crystal of REBCO high-temperature superconductor; The 3rd time was 15～30 minutes, and the 3rd temperature is Peritectic Reaction temperature; The 4th time was 10～20 hours, and the 4th temperature is lower than 2～4 ℃ of Peritectic Reaction temperature; The 5th time was 15～30 hours, and the 5th temperature is lower than 3～6 ℃ of Peritectic Reaction temperature; The 6th time was 15～40 hours, and the 6th temperature is lower than 3～10 ℃ of Peritectic Reaction temperature.
Further, quench and be: by the accurate single crystal furnace cooling of REBCO high-temperature superconductor.
Further, seed crystal operation c) is NdBCO/MgO thin film seed or NdBCO/YBCO/MgO thin film seed.
Further, NdBCO/MgO thin film seed refers to and on MgO single-chip, deposits the NdBCO film that a layer thickness is the c-axis orientation of 100～1000nm; The length of NdBCO/MgO thin film seed c-axis direction is 0.5～1mm, and ab face is of a size of 2mm * 2mm～10mm * 10mm; NdBCO/YBCO/MgO thin film seed refers to and on MgO single-chip, first deposits the ybco film that a layer thickness is the c-axis orientation of 100～300nm, then on ybco film, depositing a layer thickness is the NdBCO film of the c-axis orientation of 300～600nm again, and ab face is of a size of 2mm * 2mm～10mm * 10mm.
Preferably, seed crystal is c-axis orientation, and seed crystal is of a size of 2mm * 2mm.
Further, REBCO is YBCO.
Thus, the present invention has following technique effect:
1, the present invention adopts top seed crystal melting texture to prepare the accurate single crystal of REBCO high-temperature superconductor of calcium doping first, in preparation process, and only need to be by CaCO
3evenly sneak in precursor powder, suppress cylindric presoma, method is simple, easy handling, completely repeat controlled.
2, the present invention adopts CaCO
3the component of the precursor powder of the accurate single crystal of REBCO high-temperature superconductor that powder adulterates as calcium, in the high-temperature calcination process of melting texture method, CaCO
3there is chemical reaction, CO
2discharge volatilization, stay in the chemical structure that Ca element is uniformly distributed in REBCO, thereby realize the Uniform Doped of the calcium constituent in the accurate single crystal of REBCO high-temperature superconductor.
3, compare for the accurate single crystal of calcium doping REBCO high-temperature superconductor with traditional top seed crystal lifting legal system, the present invention adopts top seed crystal melting texture to prepare the accurate single crystal of REBCO high-temperature superconductor of calcium doping, can effectively prevent the pollution of other constituent elements, and easily prepare, can realize highly doped and grow reliable.
4, the present invention adopts the method for the accurate single crystal of REBCO high-temperature superconductor prepared by top seed crystal melting texture, chemical doping except calcium constituent, the preparation of the accurate single crystal of REBCO high-temperature superconductor that can also adulterate for other chemical elements, there is universality, meet doped element and the diversified preparation of growth system.
Below with reference to accompanying drawing, the technique effect of design of the present invention, concrete structure and generation is described further, to understand fully object of the present invention, feature and effect.
Accompanying drawing explanation
Fig. 1 is that presoma in a preferred embodiment of the present invention and seed crystal are put schematic diagram in growth furnace;
Fig. 2 is the schematic diagram of the temperature program(me) of the melting structure growth in a preferred embodiment of the present invention;
Fig. 3 is the optical photograph of the accurate single crystal of 3wt%Ca element doping YBCO superconduction that obtains in a preferred embodiment of the present invention;
Fig. 4 is that sample shown in Fig. 3 is tested the superconduction invert point curve (Tc) obtaining by PPMS.
Embodiment
Embodiment mono-
In the present embodiment, as depicted in figs. 1 and 2, provided respectively in the seed crystal melting texture method of top, seed crystal 1 and presoma 2 are put the schematic diagram that schematic diagram and seed crystal 1 and presoma 2 carry out the temperature program(me) of melting structure growth in growth furnace.Specifically, a kind of method of preparing the accurate single crystal of YBCO high-temperature superconductor of calcium doping of the present embodiment, comprises following operation:
1, according to the ratio of Y:Ba:Cu=1:2:3, by Y
2o
3, BaCO
3mix to obtain the powder of Y123 phase with CuO powder.
2, after the powder of the Y123 phase in step 1 fully being ground evenly, in air, 900 ℃ of sintering are 48 hours, by the powder after sintering again grind, 900 ℃ of sintering 48 hours in air, in triplicate, obtain evenly single Y123 pure phase powder of component.
3, the Y123 pure phase powder, the CaCO that step 2 are obtained
3powder, CeO
2powder is according to Y123+3wt%CaCO
3+ 1wt%CeO
2component batching, after fully milling and mixing, get the mixed powder of 10g and put into mould, being pressed into diameter is the columniform presoma of 20mm.
4, the seed crystal material of choosing the NdBCO/YBCO/MgO film of the c-axis orientation that is of a size of 2mm * 2mm, wherein, 2mm * 2mm represents length and the wide 2mm of being of thin film seed.
5, the seed crystal material in step 4 is positioned over to the upper face center region of presoma.
6, the seed crystal material in step 5 and presoma are positioned in growth furnace and carry out melting structure growth, the actual temp program of growth furnace is:
A, from room temperature, start to be warming up to 950 ℃ through 5h insulation 2h.
B, continuation heating, be warming up to 1090 ℃, insulation 1.5h.
C, in 35 minutes, fast cooling to 1012 ℃.
D, the 0.15 ℃/h 20h that grows, the 0.20 ℃/h 20h that grows, 0.25 ℃/h growth 20h is 60h altogether.
E, quenching make the accurate single crystal of YBCO high-temperature superconductor of Ca element doping.
As shown in Figure 3, provided the optical photograph of the accurate single crystal of YBCO high-temperature superconductor of the Ca element doping that the method for the present embodiment prepares.Can find out, the accurate single crystal of YBCO high-temperature superconductor of Ca element doping is induced outside growth regularity by the seed crystal that is placed in upper face center district.
By the accurate single crystal cutting of the YBCO high-temperature superconductor of the Ca element doping shown in Fig. 3, obtain the square small sample of 1.5mm of two different zones, after logical oxygen is processed respectively, by the comprehensive physical property measuring system of PPMS() specimen, as shown in Figure 4, the superconduction invert point that obtains sample is all about 72K, and hence one can see that, Ca element is successfully evenly mixed in YBCO single crystal, realizes the chemical doping of Ca element.
Embodiment bis-
A method of preparing the accurate single crystal of YBCO high-temperature superconductor of calcium doping, comprises following operation:
1, according to the ratio of Y:Ba:Cu=1:2:3, by Y
2o
3, BaCO
3mix to obtain the powder of Y123 phase with CuO powder.
2, after the powder of the Y123 phase in step 1 fully being ground evenly, in air, 900 ℃ of sintering are 48 hours, by the powder after sintering again grind, 900 ℃ of sintering 48 hours in air, in triplicate, obtain evenly single Y123 pure phase powder of component.
3, the Y123 pure phase powder, the CaCO that step 2 are obtained
3powder, CeO
2powder is according to Y123+1wt%CaCO
3+ 0.3wt%CeO
2component batching, after fully milling and mixing, get the mixed powder of 30g and put into mould, being pressed into diameter is the columniform presoma of 30mm.
4, the seed crystal material of choosing the NdBCO/YBCO/MgO film of the c-axis orientation that is of a size of 2mm * 2mm, wherein, 2mm * 2mm represents length and the wide 2mm of being of thin film seed.
5, the seed crystal material in step 4 is positioned over to the upper face center region of presoma.
6, the seed crystal material in step 5 and presoma are positioned in growth furnace and carry out melting structure growth, the actual temp program of growth furnace is:
A, from room temperature, start to be warming up to 950 ℃ through 5h insulation 5h.
B, continuation heating, be warming up to 1090 ℃ for 2 hours, insulation 2h.
C, in 35 minutes, fast cooling to 1012 ℃.
D, the 0.15 ℃/h 20h that grows, the 0.20 ℃/h 30h that grows, 0.25 ℃/h growth 40h is 90h altogether.
E, quenching make the accurate single crystal of YBCO high-temperature superconductor of Ca element doping.
Embodiment tri-
A method of preparing the accurate single crystal of YBCO high-temperature superconductor of calcium doping, comprises following operation:
1, according to the ratio of Y:Ba:Cu=1:2:3, by Y
2o
3, BaCO
3mix to obtain the powder of Y123 phase with CuO powder.
2, after the powder of the Y123 phase in step 1 fully being ground evenly, in air, 900 ℃ of sintering are 48 hours, by the powder after sintering again grind, 900 ℃ of sintering 48 hours in air, in triplicate, obtain evenly single Y123 pure phase powder of component.
3, the Y123 pure phase powder, the CaCO that step 2 are obtained
3powder, CeO
2powder is according to Y123+15wt%CaCO
3+ 1.5wt%CeO
2component batching, after fully milling and mixing, get the mixed powder of 10g and put into mould, being pressed into diameter is the columniform presoma of 20mm.
4, the seed crystal material of choosing the NdBCO/YBCO/MgO film of the c-axis orientation that is of a size of 2mm * 2mm, wherein, 2mm * 2mm represents length and the wide 2mm of being of thin film seed.
5, the seed crystal material in step 4 is positioned over to the upper face center region of presoma.
6, the seed crystal material in step 5 and presoma are positioned in growth furnace and carry out melting structure growth, the actual temp program of growth furnace is:
A, from room temperature, start to be warming up to 950 ℃ through 5h insulation 5h.
B, continuation heating, be warming up to 1090 ℃ for 2 hours, insulation 2h.
C, in 35 minutes, fast cooling to 1012 ℃.
D, the 0.15 ℃/h 20h that grows, the 0.20 ℃/h 20h that grows, 0.25 ℃/h growth 20h is 60h altogether.
E, quenching make the accurate single crystal of YBCO high-temperature superconductor of Ca element doping.
Embodiment tetra-
A method of preparing the accurate single crystal of GdBCO high-temperature superconductor of calcium doping, comprises following operation:
1, according to the ratio of Gd:Ba:Cu=1:2:3, by Gd
2o
3, BaCO
3mix to obtain the powder of Gd123 phase with CuO powder.
2, after the powder of the Gd123 phase in step 1 fully being ground evenly, in air, 900 ℃ of sintering are 48 hours, by the powder after sintering again grind, 900 ℃ of sintering 48 hours in air, in triplicate, obtain evenly single Gd123 pure phase powder of component.
3, the Gd123 pure phase powder, the CaCO that step 2 are obtained
3powder, CeO
2powder is according to Gd123+1wt%CaCO
3+ 0.3wt%CeO
2component batching, after fully milling and mixing, get the mixed powder of 10g and put into mould, being pressed into diameter is the columniform presoma of 20mm.
4, the seed crystal material of choosing the NdBCO/YBCO/MgO film of the c-axis orientation that is of a size of 2mm * 2mm, wherein, 2mm * 2mm represents length and the wide 2mm of being of thin film seed.
5, the seed crystal material in step 4 is positioned over to the upper face center region of presoma.
6, the seed crystal material in step 5 and presoma are positioned in growth furnace and carry out melting structure growth, the actual temp program of growth furnace is:
A, from room temperature, start to be warming up to 950 ℃ through 5h insulation 3h.
B, continuation heating, be warming up to 1090 ℃ for 2 hours, insulation 2h.
C, in 20 minutes, fast cooling to 1040 ℃.
D, the 0.15 ℃/h 20h that grows, the 0.20 ℃/h 20h that grows, 0.25 ℃/h growth 20h is 60h altogether.
E, quenching make the accurate single crystal of GdBCO high-temperature superconductor of Ca element doping.
Embodiment five
A method of preparing the accurate single crystal of SmBCO high-temperature superconductor of calcium doping, comprises following operation:
1, according to the ratio of Sm:Ba:Cu=1:2:3, by Sm
2o
3, BaCO
3mix to obtain the powder of Sm123 phase with CuO powder.
2, after the powder of the Sm123 phase in step 1 fully being ground evenly, in air, 900 ℃ of sintering are 48 hours, by the powder after sintering again grind, 900 ℃ of sintering 48 hours in air, in triplicate, obtain evenly single Sm123 pure phase powder of component.
3, the Sm123 pure phase powder, the CaCO that step 2 are obtained
3powder, CeO
2powder is according to Sm123+1wt%CaCO
3+ 0.3wt%CeO
2component batching, after fully milling and mixing, get the mixed powder of 10g and put into mould, being pressed into diameter is the columniform presoma of 20mm.
4, the seed crystal material of choosing the NdBCO/YBCO/MgO film of the c-axis orientation that is of a size of 2mm * 2mm, wherein, 2mm * 2mm represents length and the wide 2mm of being of thin film seed.
5, the seed crystal material in step 4 is positioned over to the upper face center region of presoma.
6, the seed crystal material in step 5 and presoma are positioned in growth furnace and carry out melting structure growth, the actual temp program of growth furnace is:
A, from room temperature, start to be warming up to 950 ℃ through 5h insulation 3h.
B, continuation heating, be warming up to 1100 ℃ for 2 hours, insulation 2h.
C, in 15 minutes, fast cooling to 1060 ℃.
D, the 0.15 ℃/h 20h that grows, the 0.20 ℃/h 20h that grows, 0.25 ℃/h growth 20h is 60h altogether.
E, quenching make the accurate single crystal of SmBCO high-temperature superconductor of Ca element doping.
As can be seen here, the REBCO(that embodiments of the invention adopt top seed crystal melting texture to prepare calcium doping comprises YBCO, GdBCO, SmBCO etc.) the accurate single crystal of high-temperature superconductor, in preparation process, only need to be by CaCO
3evenly sneak in precursor powder, suppress cylindric presoma, method is simple, easy handling, completely repeat controlled.
In addition, in embodiment, adopt CaCO
3the component of the precursor powder of the accurate single crystal of REBCO high-temperature superconductor that powder adulterates as calcium, in the high-temperature calcination process of melting texture method, CaCO
3there is chemical reaction, CO
2discharge volatilization, stay in the chemical structure that Ca element is uniformly distributed in REBCO, thereby realize the Uniform Doped of the calcium constituent in the accurate single crystal of REBCO high-temperature superconductor.
Compare for the accurate single crystal of calcium doping REBCO high-temperature superconductor with traditional top seed crystal lifting legal system, the present invention adopts top seed crystal melting texture to prepare the accurate single crystal of REBCO high-temperature superconductor of calcium doping, can effectively prevent the pollution of other constituent elements, and easily prepare, can realize highly doped and grow reliable.
The method of the accurate single crystal of REBCO high-temperature superconductor prepared by embodiments of the invention employing top seed crystal melting texture, chemical doping except calcium constituent, the preparation of the accurate single crystal of REBCO high-temperature superconductor that can also adulterate for other chemical elements, there is universality, meet doped element and the diversified preparation of growth system.
More than describe preferred embodiment of the present invention in detail.Should be appreciated that those of ordinary skill in the art just can design according to the present invention make many modifications and variations without creative work.Therefore, all technician in the art, all should be in the determined protection domain by claims under this invention's idea on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (10)
1. a method of preparing the accurate single crystal of REBCO high-temperature superconductor of calcium doping, comprises following operation:
A) prepare the powder of RE123 phase;
B) prepare presoma;
C) seed crystal is placed on to the upper surface of described presoma;
D) described presoma and described seed crystal are placed in to growth furnace and carry out melting texture growing high temperature superconducting materia; It is characterized in that described operation b) in described presoma be that the powder of the described RE123 phase that a) obtains of described operation is by RE123+(0～15) wt%CaCO
3+ (0.3～1.5) wt%CeO
2ratio mix, the cylindrical presoma that forms of compacting.
2. the method for the accurate single crystal of growing RE BCO high-temperature superconductor according to claim 1, is characterized in that, described operation a) comprising:
According to the ratio of RE:Ba:Cu=1:2:3 by RE
2o
3, BaCO
3mix with CuO powder, obtain the Precursor Powder of RE123 phase;
After the Precursor Powder of described RE123 phase is ground, in air 900 ℃ of sintering 48 hours and repeat 3 times this grind, sintering process.
3. the method for the accurate single crystal of growing RE BCO high-temperature superconductor according to claim 1, is characterized in that, described operation a) in, the diameter of described presoma is 15～30mm.
4. the method for the accurate single crystal of growing RE BCO high-temperature superconductor according to claim 1, is characterized in that, described operation d) in, RE123+(0～15) wt%CaCO
3+ (0.3～1.5) wt%CeO
2ratio refer to: RE123, CaCO
3and CeO
2mass ratio be 1:(0～15) %:(0.3～1.5) %.
5. the method for the accurate single crystal of growing RE BCO high-temperature superconductor according to claim 1, is characterized in that, described operation d) melting texture growing comprise the following steps: make the temperature in described growth furnace within the very first time, rise to the first temperature; Be incubated 2～5 hours; Make the temperature in described growth furnace within the second time, rise to the second temperature; Be incubated 1～2 hour; Make the temperature in described growth furnace within the 3rd time, be down to the 3rd temperature; Make the temperature in described growth furnace within the 4th time, be down to the 4th temperature; Make the temperature in described growth furnace within the 5th time, be down to the 5th temperature; Make the temperature in described growth furnace within the 6th time, be down to the 6th temperature; Finally quench, obtain the accurate single crystal of REBCO high-temperature superconductor of described calcium doping.
6. the method for the accurate single crystal of growing RE BCO high-temperature superconductor according to claim 5, is characterized in that, the described very first time is 3～5 hours, and described the first temperature is 900 ℃～950 ℃; Described the second time is 1～2 hour, and described the second temperature is higher than 30～80 ℃ of the Peritectic Reaction temperature of the accurate single crystal of described REBCO high-temperature superconductor; Described the 3rd time is 15～30 minutes, and described the 3rd temperature is described Peritectic Reaction temperature; Described the 4th time is 10～20 hours, and described the 4th temperature is lower than 2～4 ℃ of described Peritectic Reaction temperature; Described the 5th time is 15～30 hours, and described the 5th temperature is lower than 3～6 ℃ of described Peritectic Reaction temperature; Described the 6th time is 15～40 hours, and described the 6th temperature is lower than 3～10 ℃ of described Peritectic Reaction temperature.
7. the method for the accurate single crystal of growing RE BCO high-temperature superconductor according to claim 5, is characterized in that, described quenching is: by the accurate single crystal furnace cooling of described REBCO high-temperature superconductor.
8. the method for the accurate single crystal of growing RE BCO high-temperature superconductor according to claim 1, is characterized in that, described operation c) seed crystal be NdBCO/MgO thin film seed or NdBCO/YBCO/MgO thin film seed.
9. the method for the accurate single crystal of growing RE BCO high-temperature superconductor according to claim 8, is characterized in that, described seed crystal is c-axis orientation, and described seed crystal is of a size of 2mm * 2mm.
10. the method for the accurate single crystal of growing RE BCO high-temperature superconductor according to claim 1, is characterized in that, described REBCO is YBCO.
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| CN103882513A (en) * | 2014-03-27 | 2014-06-25 | 上海交通大学 | Method for growing calcium-doped REBCO (REBa2Cu3Ox) high-temperature-superconductive quasi-monocrystal |
| CN104264226A (en) * | 2014-09-26 | 2015-01-07 | 上海交通大学 | Preparation method of iron-doped REBCO high-temperature superconducting quasi single crystal |
| CN104790038A (en) * | 2015-05-14 | 2015-07-22 | 上海交通大学 | Method for controlling fluid loss in REBCO pseudo-single crystal growth process |
| CN105133014A (en) * | 2015-09-17 | 2015-12-09 | 上海交通大学 | Method for growing REBCO high-temperature superconducting quasi single crystals |
| CN114182349A (en) * | 2021-12-10 | 2022-03-15 | 福建师范大学 | Method for exciting superconducting performance of Ge-doped FeSeTe single crystal material by alcohol soaking method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103882513A (en) * | 2014-03-27 | 2014-06-25 | 上海交通大学 | Method for growing calcium-doped REBCO (REBa2Cu3Ox) high-temperature-superconductive quasi-monocrystal |
| CN104264226A (en) * | 2014-09-26 | 2015-01-07 | 上海交通大学 | Preparation method of iron-doped REBCO high-temperature superconducting quasi single crystal |
| CN104790038A (en) * | 2015-05-14 | 2015-07-22 | 上海交通大学 | Method for controlling fluid loss in REBCO pseudo-single crystal growth process |
| CN105133014A (en) * | 2015-09-17 | 2015-12-09 | 上海交通大学 | Method for growing REBCO high-temperature superconducting quasi single crystals |
| CN114182349A (en) * | 2021-12-10 | 2022-03-15 | 福建师范大学 | Method for exciting superconducting performance of Ge-doped FeSeTe single crystal material by alcohol soaking method |
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