CN101319379A - Method for 45 degree rare earth barium copper oxygen thin film seed high speed growth superconducting block material - Google Patents
Method for 45 degree rare earth barium copper oxygen thin film seed high speed growth superconducting block material Download PDFInfo
- Publication number
- CN101319379A CN101319379A CNA200810037417XA CN200810037417A CN101319379A CN 101319379 A CN101319379 A CN 101319379A CN A200810037417X A CNA200810037417X A CN A200810037417XA CN 200810037417 A CN200810037417 A CN 200810037417A CN 101319379 A CN101319379 A CN 101319379A
- Authority
- CN
- China
- Prior art keywords
- rebco
- seed crystal
- bulk material
- growth
- hours
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
The invention relates to a method for promoting the high speed growth of a superconducting bulk material by utilizing a 45-degree rare earth BCO membrane seed crystal. The REBCO membrane with a 45-degree tetrasymmetric structure in plane inner orientation is taken as the seed crystal, and the high temperature superconducting REBCO bulk material is in homoepitaxy growth by a cold seed crystal method. The membrane material has a superheat degree more than 20K on a monocrystalline magnesia substrate, and the unique plane inner orientation can evidently increase the growth speed of the bulk material. The REBCO and an appropriate amount of RE211 are mixed, are ground and calcined for a plurality of times, are pressed into a precursor piece, the corresponding long strip REBCO membrane is arranged on the top part of the precursor piece to serve as the seed crystal, and the REBCO bulk material is prepared by a melt textured method. The method is simple, improves the production efficiency of the bulk material, and ensures that the high temperature superconducting REBCO bulk material with a large single crystal domain structure is grown at a high speed on the conditions that impurity is free and crystal lattices are matched completely.
Description
Technical field
The present invention relates to a kind of method of 45 ° of rare earth barium copper oxygen thin film seed high speed growth superconductive blocks, be specifically related to a kind of employing melting texture method, with REBCO (RE, Ba and Cu oxide) film that is oriented to 45 ° of four symmetrical structure in the face as seed crystal, the method for homogeneity high speed epitaxy superconduction bulk material.
Background technology
Melting texture method (MTG) is generally believed it is a kind of REBCO high-temperature superconductor block material preparation method that has potentiality.These block materials that make have many potential to use, as can be used for aspects such as magnetic suspension force, magnetic bearing, flywheel energy storage and permanent magnet.At application the requirement of bulk is generally and has bigger size, higher critical current density (J
c), therefore, requirement reaches big one-domain structure and good orientation control when preparation high-temperature superconductor block material.In order to reach above two purposes, need in melting texture, introduce orientation and single domain growth that seed crystal comes control growing, therefore, seed crystal is considerable in the technological process of melting texture, not only require seed crystal itself that higher quality is arranged, and, more need to use large-sized seed crystal in order to obtain big one-domain structure.A suitable seed crystal need satisfy some primary conditions: will have at first exactly with the crystal that will grow same or analogous crystalline network and lattice parameter are arranged; Secondly, seed crystal can not with melt generation chemical reaction, perhaps the crystal of being grown is caused too big pollution; At last, the fusing point of seed crystal has special requirement, and general bulk preparation is at room temperature just in advance seed crystal to be in place, and operation is simple.But the fusing point of seed crystal just must be greater than the top temperature in the melting texture process, to guarantee to occur the situation of seed crystal fusing in process of growth simultaneously.Therefore the general dissimilar materials that adopts is as seed crystal when growth, and this heterogeneous seed crystal also still can be influential for the structure and the performance of growth bulk.The seed crystal of usually existing report use does not still have and satisfies all requirements fully.In addition, realize the preparation of big single domain bulk, at first also need to obtain to try one's best large-sized seed crystal, to guarantee the effective volume of the single domain that epitaxy goes out; Secondly, because general commonly used seed crystal all is to induce epitaxy to carry out along the major axes orientation of crystalline network (＜100 〉,＜010〉direction), the epitaxy speed of bulk is slow relatively, obtaining big volume will need long time, comparatively unfavorable for preparation.Method and change process of growth that some research groups have used a plurality of little seed crystals to put simultaneously improve the corresponding speed of growth and obtain proximate one-domain structure, but this method has increased the complexity of technology greatly, has reduced success ratio.
Summary of the invention
The objective of the invention is at the deficiencies in the prior art, a kind of method of 45 ° of rare earth barium copper oxygen thin film seed high speed growth superconductive blocks is provided, technology is simple and easy to realize, can prepare big single-domain high temperature superconductor block materials pollution-free, favorable orientation, improve the speed of growth of block materials simultaneously, shorten growth time, raise the efficiency.
For realizing such purpose, in the technical scheme of the present invention, use be the REBCO kind film that is oriented to 45 ° of four symmetrical structure in a kind of.The high thermal stability and the high crystalline that utilize this class film to have use cold seed method to come isoepitaxial growth high-temperature superconductor block material.Be deposited on the REBCO kind film on the single crystal substrate, owing to be oriented to 45 ° four symmetrical structures in its face, therefore the epitaxy that can induce the control bulk along the crystal lattices structure＜110〉direction carry out, and general seed crystal commonly used is the control bulk along the major axes orientation of crystalline network (＜010〉and＜100〉direction) epitaxy.Compare mutually, than the speed of growth faster being arranged, therefore can improve growth efficiency along the major axes orientation growth along＜110〉direction growth meetings.In addition, this class film in the temperature of fusion on the magnesium oxide single crystal substrate than the powder of REBCO material of the same race or more than the high 20K of bulk.Therefore can be used for iso-epitaxy, can be described as a kind of suitable ideal seed crystal material.
Realize the epitaxy of this class thin film seed, at first to RE123 and RE211 be carried out the component batching according to suitable proportion, after grinding calcining repeatedly, be pressed into the presoma sheet and put corresponding REBCO film as seed crystal, obtain the REBCO block materials by Peritectic Reaction: RE211+L → REBCO at its top.
Method concrete steps of the present invention are as follows:
1, prepares burden according to REBCO+ (20～35) mol%RE211 component.
2, grind, 900 ℃ ± 5 ℃ insulations were calcined more than 48 hours, and this grinding, calcination process repeat 3 times altogether.
3, will calcine the ground powder compression in back and become the presoma sheet, the REBCO homogeneity film as seed crystal that is oriented to 45 ° of four symmetrical structure in the corresponding face is put at the top.
4, the presoma sheet is placed on the MgO single crystalline substrate, whole system is put into tightness system.
5, be warming up to the following 20-50 of peritectic melting temperature ℃ of REBCO in 2 hours, be incubated 1 hour; Continue heating, be warming up to above 30 ± 5 ℃ of peritectic temperature, and be incubated 1.5 hours in 2 hours.
6, temperature is reduced to the peritectic melting temperature in 15 minutes, with per hour 0.5 ℃ speed cooling 20-40 hour, quenching at last makes RE, Ba and Cu oxide high-temperature superconductor block material then.
The REBCO homogeneity thin-film material that is oriented to 45 ° four symmetrical structures in of the present invention can be for being deposited on the REBCO film on the magnesium oxide single crystal substrate.
The present invention adopts the REBCO film with high thermal stability as kind of a film, iso-epitaxy melting texture growing REBCO superconductive block.Its advantage is: (1) obtains to have the high quality thin film of orientation in required easily because the preparation technology of REBCO film is ripe, has solved the problem that big area regular shape seed crystal is difficult to obtain; (2) high thermal stability of seed crystal has been realized isoepitaxial growth, and the component of seed crystal and bulk, crystalline network and lattice parameter are identical, do not have pollution problems, has also avoided the unnecessary element doping that lattice does not match and heterogeneous seed crystal is introduced simultaneously.The epitaxy that orientation can be induced bulk in (3) 45 ° the face along REBCO crystal lattices structure＜110〉direction grow, can obtain the speed of growth faster the seed crystal that in 0 ° of face of general use, is orientated along the epitaxy speed of this direction.Can realize the high-speed rapid growth of bulk, raise the efficiency.
Technology of the present invention is simple, easily operation, can be under the situation that inclusion-free and lattice mate fully growth orientation good and have the high-temperature superconductor REBCO block materials of big one-domain structure, can solve the key issue that the high-temperature superconductor bulk is grown.
Embodiment
Below by specific embodiment technical scheme of the present invention is further described.Following examples do not constitute limitation of the invention.
Embodiment 1:
With the YBCO/MgO film as seed crystal growth YBCO superconductive block that is oriented to 45 ° of four symmetrical structure in the face
1, prepares burden according to the Y123+35mol%Y211 component;
2, grind, insulation was calcined more than 48 hours about 900 ℃, and is less and be evenly distributed for the particle that reaches Y211, regrinding, calcining, and same process is triplicate altogether;
3, will calcine the ground powder compression in back becomes
Circular presoma sheet, top are placed in the long strip shape face that is of a size of the 2mm width and are oriented to 45 ° of four Symmetric Y 123/MgO film as seed crystal;
4, the presoma sheet is placed on the MgO single crystalline substrate, whole system is put into tightness system;
5, be warming up to 960 ℃ in 2 hours, be incubated 1 hour; Continue heating, be warming up to 1045 ℃ in 2 hours, be incubated 1.5 hours;
6, in 15 minutes temperature is reduced to 1010 ℃, with per hour 0.5 ℃ speed cooling 20 hours, quenching at last makes superconduction Y123 block materials then.
Embodiment 2:SmBCO/MgO film as seed crystal growth SmBCO superconductive block
1, prepares burden according to the Sm123+30mol%Sm211 component;
2, grind, insulation was calcined more than 48 hours about 900 ℃, regrinding, calcining, and same process is triplicate altogether;
3, will calcine the ground powder compression in back becomes
Circular presoma sheet, top are placed in the long strip shape face that is of a size of the 2mm width and are oriented to 45 ° of four symmetrical Sm123 film as seed crystal;
4, the presoma sheet is placed on the MgO single crystalline substrate, whole system is put into tightness system;
5, be warming up to 980 ℃ in 2 hours, be incubated 1 hour; Continue heating, be warming up to 1080 ℃ in 2 hours, be incubated 1.5 hours;
6, in 15 minutes temperature is reduced to 1065 ℃, with per hour 0.5 ℃ speed cooling 20 hours, quenching at last makes superconduction SmBCO block materials then.
Claims (2)
1, a kind of method of 45 ° of rare earth barium copper oxygen thin film seed high speed growth superconductive blocks is characterized in that comprising the steps:
1) prepares burden according to REBCO+ (20～35) mol%RE211 component;
2) grind, calcined 48 hours down at 900 ℃ ± 5 ℃; This grinding, calcination process repeat 3 times altogether;
3) will calcine the ground powder compression in back and become the presoma sheet, the REBCO homogeneity film as seed crystal that is oriented to 45 ° of four symmetrical structure in the face is put at the top;
4) the presoma sheet is placed on the MgO single crystalline substrate, whole system is put into tightness system;
5) be warming up to the following 20-50 of peritectic melting temperature ℃ of REBCO in 2 hours, be incubated 1 hour; Continue heating, be warming up to above 30 ± 5 ℃ of peritectic temperature, and be incubated 1.5 hours in 2 hours;
6) temperature is reduced to the peritectic melting temperature in 15 minutes, with per hour 0.5 ℃ speed cooling 20-40 hour, quenching at last makes RE, Ba and Cu oxide high-temperature superconductor block material then.
2, according to the RE, Ba and Cu oxide high-temperature superconductor block preparation methods of claim 1, the REBCO homogeneity film that it is characterized in that being oriented in described 45 ° of four symmetrical structure is the REBCO film that is deposited on the magnesium oxide single crystal substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200810037417XA CN101319379A (en) | 2008-05-15 | 2008-05-15 | Method for 45 degree rare earth barium copper oxygen thin film seed high speed growth superconducting block material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200810037417XA CN101319379A (en) | 2008-05-15 | 2008-05-15 | Method for 45 degree rare earth barium copper oxygen thin film seed high speed growth superconducting block material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101319379A true CN101319379A (en) | 2008-12-10 |
Family
ID=40179634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200810037417XA Pending CN101319379A (en) | 2008-05-15 | 2008-05-15 | Method for 45 degree rare earth barium copper oxygen thin film seed high speed growth superconducting block material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101319379A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102174711A (en) * | 2011-03-15 | 2011-09-07 | 上海交通大学 | Method using high thermal stability film as MTG (melt textured growth) seed crystal to prepare high temperature superconducting material |
| CN103014861A (en) * | 2012-12-27 | 2013-04-03 | 上海交通大学 | Preparation method of pagoda-shaped large-size REBCO (RE-Ba-Cu-O) high-temperature superconductor block |
| CN103060914A (en) * | 2012-12-04 | 2013-04-24 | 上海交通大学 | Method for quickly growing REBCO high-temperature superconducting block by stepped slow cooling acceleration |
| CN103243383A (en) * | 2013-05-10 | 2013-08-14 | 上海交通大学 | Growth method with cooling speed control of high-temperature superconducting block material |
| CN103541011A (en) * | 2013-10-31 | 2014-01-29 | 上海交通大学 | Method of growing REBCO (Rear Earth Ba2Cu3Ox) high temperature superconductive quasi single crystal |
| CN106087034A (en) * | 2016-08-22 | 2016-11-09 | 上海交通大学 | A kind of method utilizing corrosion seed crystal induced growth REBCO high-temperature superconducting block |
-
2008
- 2008-05-15 CN CNA200810037417XA patent/CN101319379A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102174711A (en) * | 2011-03-15 | 2011-09-07 | 上海交通大学 | Method using high thermal stability film as MTG (melt textured growth) seed crystal to prepare high temperature superconducting material |
| CN102174711B (en) * | 2011-03-15 | 2012-11-28 | 上海交通大学 | Method using high thermal stability film as MTG (melt textured growth) seed crystal to prepare high temperature superconducting material |
| CN103060914A (en) * | 2012-12-04 | 2013-04-24 | 上海交通大学 | Method for quickly growing REBCO high-temperature superconducting block by stepped slow cooling acceleration |
| CN103060914B (en) * | 2012-12-04 | 2016-01-13 | 上海交通大学 | Notch cuttype accelerates the method for slow cooling quick growing RE BCO high-temperature superconductor block |
| CN103014861A (en) * | 2012-12-27 | 2013-04-03 | 上海交通大学 | Preparation method of pagoda-shaped large-size REBCO (RE-Ba-Cu-O) high-temperature superconductor block |
| CN103014861B (en) * | 2012-12-27 | 2016-01-13 | 上海交通大学 | The preparation method of Pagoda-shaped large size REBCO high-temperature superconductor block |
| CN103243383A (en) * | 2013-05-10 | 2013-08-14 | 上海交通大学 | Growth method with cooling speed control of high-temperature superconducting block material |
| CN103541011A (en) * | 2013-10-31 | 2014-01-29 | 上海交通大学 | Method of growing REBCO (Rear Earth Ba2Cu3Ox) high temperature superconductive quasi single crystal |
| CN103541011B (en) * | 2013-10-31 | 2015-12-09 | 上海交通大学 | The method of the accurate single crystal of a kind of growing RE BCO high-temperature superconductor |
| CN106087034A (en) * | 2016-08-22 | 2016-11-09 | 上海交通大学 | A kind of method utilizing corrosion seed crystal induced growth REBCO high-temperature superconducting block |
| CN106087034B (en) * | 2016-08-22 | 2018-11-16 | 上海交通大学 | A method of utilizing corrosion seed crystal induced growth REBCO high-temperature superconducting block |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102925976B (en) | Method using NGO monocrystal substrate to prepare a shaft REBCO high temperature superconductor thick film | |
| CN101717256B (en) | Method for preparing rare earth barium copper oxide superconducting block material | |
| CN101319379A (en) | Method for 45 degree rare earth barium copper oxygen thin film seed high speed growth superconducting block material | |
| CN101503822A (en) | Preparation of rare earth barium copper oxygen superconduction bulk material under pure oxygen atmosphere | |
| CN102584250B (en) | Method for preparing REBa2Cu3Ox (REBCO) high-temperature superconducting block material | |
| CN101279847A (en) | Preparation for YBCO Superconducting bulk doped with trace rare-earth element | |
| CN102925985B (en) | Method for batch growth of REBCO high temperature superconducting bulks based on two-layer silicon carbide support | |
| CN102586876B (en) | Preparation method of Russian export blend crude oil (REBCO) high-temperature superconducting block materials | |
| CN103541011B (en) | The method of the accurate single crystal of a kind of growing RE BCO high-temperature superconductor | |
| CN1706994A (en) | Homoepitaxial superconductor lump material growing process with RE, Ba and Cu oxide film as crystal seed | |
| CN103614775B (en) | The method of the accurate single crystal of a kind of embedded seeded growth REBCO | |
| CN103526283B (en) | A kind of method of the YBCO liquid phase epitaxy film preparing pure a axle orientation | |
| CN110373717B (en) | Method for growing REBCO high-temperature superconducting block by using component layering control method | |
| CN102174711B (en) | Method using high thermal stability film as MTG (melt textured growth) seed crystal to prepare high temperature superconducting material | |
| CN105133014A (en) | Method for growing REBCO high-temperature superconducting quasi single crystals | |
| CN113430646B (en) | Method for inducing growth of REBCO superconducting block by using single seed crystal bridge structure | |
| CN1970848A (en) | Process for homo-epitaxial growth of superconductive block materials with rare earth Ba-Cu-O film as seed crystal | |
| CN103603043B (en) | The method of the accurate single crystal of a kind of embedded seeded growth calcium analysis YBCO | |
| CN103696009A (en) | Method for preparing alpha-axis alignment high-temperature superconductive film in air | |
| CN103361710B (en) | Improve the method for single domain yttrium barium copper oxide superconductor preparation efficiency | |
| CN103603034B (en) | A kind of method preparing large scale HTS single crystals body | |
| CN103060914B (en) | Notch cuttype accelerates the method for slow cooling quick growing RE BCO high-temperature superconductor block | |
| CN105401217B (en) | Utilize the method for sheet REBCO crystal growth REBCO bulk | |
| CN105177712B (en) | A kind of method of growth REBCO high-temperature superconducting blocks | |
| CN103396114A (en) | Simplified preparation method of single-domain YBCO (Yttrium Barium Copper Oxide) superconducting bulk material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20081210 |