CN103606569A - Photovoltaic cell structure - Google Patents
Photovoltaic cell structure Download PDFInfo
- Publication number
- CN103606569A CN103606569A CN201310512118.8A CN201310512118A CN103606569A CN 103606569 A CN103606569 A CN 103606569A CN 201310512118 A CN201310512118 A CN 201310512118A CN 103606569 A CN103606569 A CN 103606569A
- Authority
- CN
- China
- Prior art keywords
- silver
- lead
- powder
- photovoltaic cell
- additive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052709 silver Inorganic materials 0.000 claims abstract description 41
- 239000004332 silver Substances 0.000 claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 238000005245 sintering Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims description 24
- 239000000843 powder Substances 0.000 claims description 21
- 239000000654 additive Substances 0.000 claims description 17
- 230000000996 additive effect Effects 0.000 claims description 17
- KZVBBTZJMSWGTK-UHFFFAOYSA-N 1-[2-(2-butoxyethoxy)ethoxy]butane Chemical compound CCCCOCCOCCOCCCC KZVBBTZJMSWGTK-UHFFFAOYSA-N 0.000 claims description 16
- 239000001856 Ethyl cellulose Substances 0.000 claims description 8
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 8
- 229920001249 ethyl cellulose Polymers 0.000 claims description 8
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 8
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 claims description 8
- 238000007650 screen-printing Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- MXODCLTZTIFYDV-UHFFFAOYSA-L zinc;1,4a-dimethyl-7-propan-2-yl-2,3,4,4b,5,6,10,10a-octahydrophenanthrene-1-carboxylate Chemical compound [Zn+2].C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C([O-])=O.C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C([O-])=O MXODCLTZTIFYDV-UHFFFAOYSA-L 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000002002 slurry Substances 0.000 abstract description 3
- 238000007639 printing Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a photovoltaic cell structure comprising a p-type silicon substrate, an N-type emitter, anti-reflection layers, a front silver electrode and a back silver electrode, wherein the back silver electrode is formed by printing lead-free silver conductor slurry on a silk screen and sintering, and the anti-reflection layers are made of TiO2, SiO2 or Si3N4.
Description
Technical field
The present invention relates to a kind of electrooptical device field, particularly relate to a kind of photovoltaic cell structure.
Background technology
Solar energy is a kind of inexhaustible clean type energy, along with the exhaustion day by day of fossil energy, seeks the active demand that continuable alternative energy source becomes countries in the world day by day.Photovoltaic cell is solar energy to be changed to a kind of semiconductor device of electric energy, is also the continuable clean energy resource of current countries in the world primary study.
Crystal silicon photovoltaic cell is the leading products on market at present, and its photoelectric conversion efficiency is higher.The basic structure of crystal silicon photovoltaic cell is by p-type silicon substrate, N-type emitter, anti-reflecting layer (TiO
2, SiO
2or Si
3n
4), positive silver electrode and back silver electrode form.Conductive silver slurry forms silver electrode by thick-film technique (printing, sintering) at the back side of crystal silicon solar batteries, can realize being coupled to each other and the output of electric current between solar battery sheet.Silver conductive paste comprises silver powder, glass dust, and organic carrier and additive, the quality of size performance will have a strong impact on electrical property and the mechanical performance of photovoltaic cell.
The conductivity of conductive silver slurry, adhesive force and reliability in the situation that sintering condition is certain, depend on conductive silver slurry in as the glass dust of inorganic bond phase.And silver powder is the conductive phase of silver paste, it has determined electrical property and the mechanical performance of slurry.As the glass dust of silver paste Binder Phase, it must guarantee after sintering that silver forms good contacting with silicon substrate.
At present, all leaded, cadmium, mercury, the product of the harmful substances such as Cr VI has been forbidden selling at EU market, and therefore, the object in environmental protection, develops a kind of unleaded silver conductive paste, for use in having become common recognition in the industry in photovoltaic cell.
Summary of the invention
The object of this invention is to provide a kind of photovoltaic cell structure, this photovoltaic cell structure adopts silver conductive paste silk screen printing to form electrode, and it does not contain plumbous to meet the requirement of environmental protection; And this electrode has good adhesive force.
The photovoltaic cell structure that the present invention proposes, comprising: p-type silicon substrate, N-type emitter, anti-reflecting layer, positive silver electrode and back silver electrode;
Wherein, back silver electrode forms by sintering by silk screen printing is lead-free silver conductive paste used;
Described Lead free silver conducting paste comprises: silver powder, lead-free glass powder, organic bond and additive;
Wherein, according to weight percent meter, the silver powder that contains 65wt%-75wt%, this silver powder is ball shape silver powder, its purity >=9.995%, its average grain diameter is 0.3-0.8 micron;
Described lead-free glass powder is that low-melting glass, its content are 3wt%-8wt%; Wherein, the Bi that consists of (percentage by weight): 58.3wt%-61.6wt% of this lead-free glass powder
2o
3, 19.7wt%-22.4wt% B
2o
3, the ZnO of 6.2wt%-8.5wt% is, the TiO of 7.5wt%-15.8wt%
2; The average grain diameter of this lead-free glass powder is not more than 5 microns;
The content of organic bond is 6wt%-12wt%; Consisting of of organic bond wherein: ethyl cellulose, terpinol and dibutyl carbitol (DBC), by weight percentage, the content of ethyl cellulose, terpinol and dibutyl carbitol (DBC) is respectively: 10wt%-15wt%, 30wt%-50wt%, 35wt%-60wt%;
The content of additive is: 5wt%-26wt%; Additive can be zinc resinate, and its average grain diameter is 0.8-1.5 micron; Additive can be also Ti, Zn, and Al, Fe, selects one or both in the oxide of In, and the average grain diameter of described oxide powder is not more than 0.8 micron.
The technique effect of Lead free silver conducting paste of the present invention:
The lead-free glass powder that slurry of the present invention adopts has lower softening point, and owing to not containing heavy metal lead, therefore can meet the requirement of environmental protection.Meanwhile, after its sintering, make silver electrode there is good adhesive force, can guarantee that silver electrode and silicon substrate form good contacting.
Accompanying drawing explanation
Fig. 1 is the electrode structure of the photovoltaic cell that proposes of the present invention.
Embodiment
With reference to Fig. 1, the photovoltaic cell structure that the present invention proposes, comprising: p-type silicon substrate 1, N-type emitter 2, anti-reflecting layer 3, positive silver electrode 4 and back silver electrode 5;
Wherein, back silver electrode 5 forms by sintering by silk screen printing is lead-free silver conductive paste used, and wherein back silver electrode 5 is embedded in anti-reflecting layer 3 completely, and the flush of back silver electrode 5 and anti-reflecting layer 3; In the embedded anti-reflecting layer 3 of positive silver electrode 4 parts, it has the part of protruding anti-reflecting layer 3.
Wherein, the material of anti-reflecting layer 3 is: TiO
2, SiO
2or Si
3n
4;
Described Lead free silver conducting paste comprises: silver powder, lead-free glass powder, organic bond and additive;
Wherein, according to weight percent meter, the silver powder that contains 65wt%-75wt%, this silver powder is ball shape silver powder, its purity >=9.995%, its average grain diameter is 0.3-0.8 micron;
Described lead-free glass powder is that low-melting glass, its content are 3wt%-8wt%; Wherein, the Bi that consists of (percentage by weight): 58.3wt%-61.6wt% of this lead-free glass powder
2o
3, 19.7wt%-22.4wt% B
2o
3, the ZnO of 6.2wt%-8.5wt% is, the TiO of 7.5wt%-15.8wt%
2; The average grain diameter of this lead-free glass powder is not more than 5 microns;
The content of organic bond is 6wt%-12wt%; Consisting of of organic bond wherein: ethyl cellulose, terpinol and dibutyl carbitol (DBC), by weight percentage, the content of ethyl cellulose, terpinol and dibutyl carbitol (DBC) is respectively: 10wt%-15wt%, 30wt%-50wt%, 35wt%-60wt%;
The content of additive is: 5wt%-26wt%; Additive can be zinc resinate, and its average grain diameter is 0.8-1.5 micron; Additive can be also Ti, Zn, and Al, Fe, selects one or both in the oxide of In, and the average grain diameter of described oxide powder is not more than 0.8 micron.
Introduce the preferred embodiments of the present invention below:
With reference to Fig. 1, the photovoltaic cell structure that the present invention proposes, comprising: p-type silicon substrate 1, N-type emitter 2, anti-reflecting layer 3, positive silver electrode 4 and back silver electrode 5;
Wherein, back silver electrode 5 forms by sintering by silk screen printing is lead-free silver conductive paste used; Wherein back silver electrode 5 is embedded in anti-reflecting layer 3 completely, and the flush of back silver electrode 5 and anti-reflecting layer 3; In the embedded anti-reflecting layer 3 of positive silver electrode 4 parts, it has the part of protruding anti-reflecting layer 3.
Described Lead free silver conducting paste comprises: silver powder, lead-free glass powder, organic bond and additive;
Wherein, according to weight percent meter, the silver powder that contains 70wt%, this silver powder is ball shape silver powder, its purity >=9.995%, its average grain diameter is 0.5 micron;
Described lead-free glass powder is that low-melting glass, its content are 5wt%; Wherein, the Bi that consists of (percentage by weight): 60wt% of this lead-free glass powder
2o
3, 21wt% B
2o
3, the ZnO of 7wt% is, the TiO of 12wt%
2; 3 microns of the average grain diameters of this lead-free glass powder;
The content of organic bond is 10wt%; Consisting of of organic bond wherein: ethyl cellulose, terpinol and dibutyl carbitol (DBC), by weight percentage, the content of ethyl cellulose, terpinol and dibutyl carbitol (DBC) is respectively: 12wt%, 45wt%, 43wt%;
The content of additive is: 15wt%; Additive can be zinc resinate, and its average grain diameter is 1 micron; Additive can be also Ti, Zn, and Al, Fe, selects one or both in the oxide of In, 0.5 micron of the average grain diameter of described oxide powder.
So far the present invention has been done to detailed explanation, but the embodiment of description above the preferred embodiments of the present invention just only, it is not intended to limit the present invention.Those skilled in the art can make any modification to the present invention, and protection scope of the present invention is limited to the appended claims.
Claims (3)
1. a photovoltaic cell structure, comprising: p-type silicon substrate, N-type emitter, anti-reflecting layer, positive silver electrode and back silver electrode; Wherein, back silver electrode forms by sintering by silk screen printing is lead-free silver conductive paste used.
2. photovoltaic cell structure as claimed in claim 1, is characterized in that:
Wherein the material of anti-reflecting layer is: TiO
2, SiO
2or Si
3n
4.
3. photovoltaic cell structure as claimed in claim 2, is characterized in that:
Described Lead free silver conducting paste comprises: silver powder, lead-free glass powder, organic bond and additive;
Wherein, according to weight percent meter, the silver powder that contains 65wt%-75wt%, this silver powder is ball shape silver powder, its purity >=9.995%, its average grain diameter is 0.3-0.8 micron;
Described lead-free glass powder is that low-melting glass, its content are 3wt%-8wt%; Wherein, the Bi that consists of (percentage by weight): 58.3wt%-61.6wt% of this lead-free glass powder
2o
3, 19.7wt%-22.4wt% B
2o
3, the ZnO of 6.2wt%-8.5wt% is, the TiO of 7.5wt%-15.8wt%
2; The average grain diameter of this lead-free glass powder is not more than 5 microns;
The content of organic bond is 6wt%-12wt%; Consisting of of organic bond wherein: ethyl cellulose, terpinol and dibutyl carbitol (DBC), by weight percentage, the content of ethyl cellulose, terpinol and dibutyl carbitol (DBC) is respectively: 10wt%-15wt%, 30wt%-50wt%, 35wt%-60wt%;
The content of additive is: 5wt%-26wt%; Additive can be zinc resinate, and its average grain diameter is 0.8-1.5 micron; Additive can be also Ti, Zn, and Al, Fe, selects one or both in the oxide of In, and the average grain diameter of described oxide powder is not more than 0.8 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310512118.8A CN103606569A (en) | 2013-10-26 | 2013-10-26 | Photovoltaic cell structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310512118.8A CN103606569A (en) | 2013-10-26 | 2013-10-26 | Photovoltaic cell structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103606569A true CN103606569A (en) | 2014-02-26 |
Family
ID=50124784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310512118.8A Pending CN103606569A (en) | 2013-10-26 | 2013-10-26 | Photovoltaic cell structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103606569A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102768871A (en) * | 2012-05-28 | 2012-11-07 | 杭州正银电子材料有限公司 | Composition of lead-free silver electrocondution slurry used for forming crystal silicon solar cell back electrode as well as preparation method thereof |
| CN103219064A (en) * | 2013-04-16 | 2013-07-24 | 江苏太阳新材料科技有限公司 | Unleaded back silver paste used for crystalline silicon solar cell and preparation method thereof |
| CN103310871A (en) * | 2012-03-15 | 2013-09-18 | 江苏新源动力有限公司 | Slurry for solar cells and preparation methods of slurry |
-
2013
- 2013-10-26 CN CN201310512118.8A patent/CN103606569A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103310871A (en) * | 2012-03-15 | 2013-09-18 | 江苏新源动力有限公司 | Slurry for solar cells and preparation methods of slurry |
| CN102768871A (en) * | 2012-05-28 | 2012-11-07 | 杭州正银电子材料有限公司 | Composition of lead-free silver electrocondution slurry used for forming crystal silicon solar cell back electrode as well as preparation method thereof |
| CN103219064A (en) * | 2013-04-16 | 2013-07-24 | 江苏太阳新材料科技有限公司 | Unleaded back silver paste used for crystalline silicon solar cell and preparation method thereof |
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Application publication date: 20140226 |