CN103604536B - A kind of condenser type surface micromachined residual stress test structure - Google Patents
A kind of condenser type surface micromachined residual stress test structure Download PDFInfo
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- CN103604536B CN103604536B CN201310618847.1A CN201310618847A CN103604536B CN 103604536 B CN103604536 B CN 103604536B CN 201310618847 A CN201310618847 A CN 201310618847A CN 103604536 B CN103604536 B CN 103604536B
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Abstract
A kind of condenser type surface micromachined residual stress test structure, comprises substrate, two pieces of bottom crowns and top crown, right angle beam and Liang Gemao district; Bottom crown is deposited on substrate top surface; Liang Gemao district is placed on substrate; Top crown is suspended at above bottom crown, and right angle beam take top crown as two parts that axle is divided into full symmetric, and every part comprises two right-angle sides, and one of them right-angle side connects the side of top crown, and another right-angle side is fixed on a side, Ge Mao district; Top crown and right angle beam are positioned at same plane, and this plane is parallel with substrate place plane; Two pieces form capacity plate antenna C1 and C2 between bottom crown and top crown respectively.Structural sheet unrelieved stress is after the translation causing top crown, and electric capacity C1 and C2 can change, and by MEMS electric capacity conventionally test, can obtain the specifying information of unrelieved stress.The present invention, by simple capacitance structure, achieves the test of the unrelieved stress produced in surface micromachined process, and with low cost, is easy to operation.
Description
Technical field
The present invention relates to a kind of surface micromachined residual stress test field, especially a kind of condenser type surface micromachined residual stress test structure.
Background technology
MEMS is the abbreviation of MEMS (micro electro mechanical system) (Micro-Electro-Mechanical Systems).MEMS organically combines electronic technology and mechanical property, can be realized the function of the aspects such as physics, chemistry, biology by the motion of suspension structure simultaneously.The job operation of MEMS has a variety of, surface micromachined technique is one of common method, by grow continuously on silicon chip functional layer, structural sheet, sacrifice layer technique make micro mechanical structure, utilize the sacrifice layer below selective corrosion removal structural sheet, obtain the microstructure be suspended near substrate surface.
But inevitably produce unrelieved stress in surface micromachined process, excessive unrelieved stress can cause membrane structure break or be out of shape.Therefore, the testing and analysis of unrelieved stress must be paid attention to, and in the design of feedback, to ensure that the MEMS of Design and manufacture possesses good performance index.How when not increasing how many cost, completing the test job of unrelieved stress, becoming the problem that research work needs to solve.
Summary of the invention
Goal of the invention: in order to customer service the deficiencies in the prior art, the invention provides structure simple, is easy to a kind of condenser type surface micromachined residual stress test structure operated, to detect the unrelieved stress produced in surface micromachined process in time.
Technical scheme: a kind of condenser type surface micromachined residual stress test structure, comprises substrate, two pieces of bottom crowns and top crown, right angle beam and Liang Gemao district; Described bottom crown is deposited on substrate top surface; Described Liang Gemao district is placed on substrate; Top crown is suspended at above bottom crown, and described right angle beam take top crown as two parts that axle is divided into full symmetric, and every part comprises two right-angle sides, and one of them right-angle side connects the side of top crown, and another right-angle side is fixed on a side, Ge Mao district; Top crown and right angle beam are positioned at same plane, and this plane is parallel with substrate place plane;
Some extends the coverage of top crown to two pieces of bottom crowns respectively, and the area that two pieces of bottom crowns are covered by top crown is identical; Two pieces form capacity plate antenna C1 and C2 between bottom crown and top crown respectively.Extend the coverage of top crown, make structural sheet unrelieved stress after the translation causing top crown, electric capacity C1 and C2 can change, and by MEMS electric capacity conventionally test, can obtain the specifying information of unrelieved stress.
Bottom crown material is doped polycrystalline silicon, and surface is coated with dielectric layer, and this dielectric layer material is silicon dioxide; Two pieces of bottom crowns are two identical rectangles.
Beneficial effect: by simple capacitance structure, achieves the test of the unrelieved stress produced in surface micromachined process, and with low cost, is easy to operation.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention
Fig. 2 is substrate surface schematic diagram
Embodiment
Below in conjunction with accompanying drawing the present invention done and further explain.
Shown in composition graphs 1 and Fig. 2, a kind of condenser type surface micromachined residual stress test structure, comprises substrate 1, two pieces of bottom crowns 2 and top crown 3, right angle beam 4 and anchor district 5; Described bottom crown 2 is deposited on substrate 1 upper surface; Liang Gemao district 5 is placed on substrate 1.
Top crown 3 is suspended at above bottom crown 2, described right angle beam 4 with top crown 3 for axle is divided into two parts of full symmetric, every part comprises two right-angle sides, and one of them right-angle side 41 connects the side of top crown 3, and another vertical right-angle side 42 is fixed on a side, Ge Mao district 5; Top crown 3 and right angle beam 4 are positioned at same plane, and this plane is parallel with substrate 1 place plane;
Two pieces of bottom crowns 2 are two identical rectangles, and some extends the coverage of top crown 3 to each bottom crown 2 respectively, and the area that two pieces of bottom crowns 2 are covered by top crown 3 is identical;
Form capacity plate antenna C1 and C2 respectively between two pieces of bottom crowns 2 and top crown 3, under unrelieved stress effect, by test C1 and C2 change, reach measurement object.
The preparation of this measurement structure adopts conventional MEMS surface processing technique.Such as, the material of substrate 1 can use monocrystalline silicon, sacrifice layer to use the common used materials such as phosphorosilicate glass (PSG) or silicon dioxide; The polysilicon of structural sheet (i.e. top crown 3 and right angle beam 4) available doping, the normal method of wet etching that adopts is removed sacrifice layer and discharges structural sheet.Bottom crown is doped polycrystalline silicon, and surface deposition one deck film dielectric layer, can be the common used materials such as SiN.Electric capacity C1 and C2 can be told easily during in order to test, in processing, mark can be added at substrate place.It is pointed out that the selection of above material is not limited only to the preferred material mentioned, also can select smithcraft.Bottom crown also can select metal material herein, preferred gold or aluminium, because plate material is identical up and down, if the polysilicon of doping selected by top crown, then the polysilicon of doping also selected by bottom crown; If metal material selected by top crown, then bottom crown also selects metal material.
Surface micromachined must at Grown sacrifice layer, structural sheet etc., and the temperature variation wherein in the technological process such as deposit, annealing inevitably makes structural sheet produce unrelieved stress.If unrelieved stress is tension stress, after structural sheet release, contraction can be produced; And unrelieved stress is compressive stress, after structural sheet release, stretching, extension can be produced.Utilize this structure to change the capacitance variations caused, can test unrelieved stress.Method of testing is as follows:
(conveniently distinguish, the bottom crown A being relatively positioned at top respectively in sign picture 1 is 21, and the bottom crown of below is B22)
1) when there is tension stress, the vertical right-angle side 42 in right angle beam 4 shrinks, and length shortens, and the moment formed pulls top crown 3 rearward to move.At this moment, the corresponding area between the bottom crown A21 of top crown 3 and top reduces, but the corresponding area between the bottom crown B22 of top crown 3 and below increases, and electric capacity C1 is less than C2.
2) when there is compressive stress, the vertical right-angle side 42 in right angle beam 4 stretches, length, and the moment formed promotes top crown 3 and forwards moves.At this moment, the corresponding area between the bottom crown A21 of top crown 3 and top increases, but the corresponding area between the bottom crown B22 of top crown 3 and below reduces, and electric capacity C1 is greater than C2.
3), when surface micromachined does not produce unrelieved stress, after release, structural sheet length is constant, and obvious movement does not occur top crown 3, and at this moment, electric capacity C1 equals electric capacity C2 substantially.
Therefore, utilize described test structure, measure the size of electric capacity C1 and C2 respectively, and compared, then presumably direction and the distance of translation can occur pole plate 3 because of release, and then judge character and the size of structural sheet unrelieved stress.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (5)
1. a condenser type surface micromachined residual stress test structure, is characterized in that: comprise substrate (1), two pieces of bottom crowns (2) and top crown (3), right angle beam (4) and Liang Gemao district (5);
Described bottom crown (2) is deposited on substrate (1) upper surface;
Described Liang Gemao district (5) is placed on substrate (1);
Described top crown (3) is suspended at bottom crown (2) top, described right angle beam (4) with top crown (3) for axle is divided into two parts of full symmetric, every part comprises two right-angle sides, one of them right-angle side (41) connects the side of top crown (3), and another vertical right-angle side (42) is fixed on Ge Mao district (5) side; Top crown (3) and right angle beam (4) are positioned at same plane, and this plane is parallel with substrate (1) place plane;
Some extends the coverage of top crown (3) to described two pieces of bottom crowns (2) respectively, and the area that two pieces of bottom crowns (2) are covered by top crown (3) is identical;
Capacity plate antenna C1 and C2 is formed respectively between two pieces of bottom crowns (2) and top crown (3).
2. a kind of condenser type surface micromachined residual stress test structure as claimed in claim 1, it is characterized in that: (2) are coated with dielectric layer with described bottom crown, this dielectric layer material is silicon nitride.
3. a kind of condenser type surface micromachined residual stress test structure as claimed in claim 1, is characterized in that: described bottom crown (2) material is doped polycrystalline silicon.
4. a kind of condenser type surface micromachined residual stress test structure as claimed in claim 1, is characterized in that: described two pieces of bottom crowns (2) are two identical rectangles.
5. a kind of condenser type surface micromachined residual stress test structure as claimed in claim 1, is characterized in that: described bottom crown (2) is identical with the material of top crown (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310618847.1A CN103604536B (en) | 2013-11-27 | 2013-11-27 | A kind of condenser type surface micromachined residual stress test structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310618847.1A CN103604536B (en) | 2013-11-27 | 2013-11-27 | A kind of condenser type surface micromachined residual stress test structure |
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| Publication Number | Publication Date |
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| CN103604536A CN103604536A (en) | 2014-02-26 |
| CN103604536B true CN103604536B (en) | 2015-07-29 |
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| CN201310618847.1A Expired - Fee Related CN103604536B (en) | 2013-11-27 | 2013-11-27 | A kind of condenser type surface micromachined residual stress test structure |
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Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1404799A1 (en) * | 1985-12-05 | 1988-06-23 | Харьковский авиационный институт им.Н.Е.Жуковского | Method of determining residual stresses in object made of dielectric material |
| US6606913B1 (en) * | 1998-11-06 | 2003-08-19 | Wisconsin Alumni Research Foundation | Micromachined strain sensor |
| WO2003007049A1 (en) * | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
| CN1828308A (en) * | 2006-04-07 | 2006-09-06 | 东南大学 | On-line testing and analyzing device and method for microelectromechanical system component material parameter |
| CN103033552B (en) * | 2012-12-28 | 2015-04-15 | 工业和信息化部电子第五研究所 | Mechanical property degradation detection method for microstructure material |
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Granted publication date: 20150729 Termination date: 20181127 |