CN103590105B - A kind of silicon ingot casting device - Google Patents
A kind of silicon ingot casting device Download PDFInfo
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- CN103590105B CN103590105B CN201310603804.6A CN201310603804A CN103590105B CN 103590105 B CN103590105 B CN 103590105B CN 201310603804 A CN201310603804 A CN 201310603804A CN 103590105 B CN103590105 B CN 103590105B
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Abstract
The invention discloses a kind of silicon ingot casting device, this silicon ingot casting device includes crucible and pad, wherein, crucible is for holding the raw material of casting silicon ingot, pad is positioned over the bottom of crucible, and this pad deviates from and is provided with some pits on the first surface of crucible bottom surface, pit is uniform on the first surface, and the material melting point of pad is higher than the fusing point of silicon ingot material；In silicon ingot preparation process, the pit that pad first surface is arranged has acted as the nucleating point at long brilliant initial stage, and pit is regular uniform on the first surface so that silicon ingot long crystalline substance initial stage nucleation is uniform, and crystal grain grows up, and final whole ingot crystal grain is also comparatively uniform；So, pit on first surface act as the nucleating point that the long crystalline substance of silicon ingot is given vent to anger, long brilliant whether uniformly unrelated with the temperature of crucible bottom, break the crucible bottom temperature decisive influence to long brilliant uniformity, when crucible bottom temperature homogeneity cannot be improved, the nucleation improving crystal is regular, thus improving long brilliant uniformity, and then improves silicon ingot quality.
Description
Technical field
The present invention relates to silicon ingot Preparation equipment technical field, particularly to a kind of silicon ingot casting device.
Background technology
Along with the outburst of energy crisis in world wide, the regenerative resource such as wind-force and solar energy is increasingly widely applied, thus having driven the flourish of renewable energy system.In numerous regenerative resources, distribution of solar energy is relatively broad, and from the geographical distribution situation of China, the solar radiation amount of China's most area all compares abundant, and therefore, the development and application of solar energy is more convenient.
In photovoltaic field, it is most common method that the method adopting directional solidification produces polycrystal silicon ingot, namely in model casting, set up the thermograde of specific direction, make molten alloy along with hot-fluid opposite direction as requested crystalline orientation solidification a kind of casting technique.The orientation of polycrystalline cast ingot is admittedly solidifying utilizes silicon ingot bottom temp relatively low, and the characteristic that head temperature is higher makes silicon ingot oriented growth bottom-up.Need when producing silicon ingot in crucible bottom uniformly, entirely spraying silicon nitride coating, and cated for tool crucible is carried out baking preheating, then charging in crucible, then carry out ingot furnace production, namely silicon ingot completes ingot casting link after coming out of the stove.
But, raw material is at the long brilliant initial stage, and the bottom temp of crucible cannot be precisely controlled, the non-uniform temperature of crucible bottom；And owing to silicon nitride coating is visibly homogeneous, whether raw material length crystalline substance uniformly depends primarily on the temperature of crucible bottom, the homogeneous temperature of crucible bottom is then long brilliant uniform, the temperature inequality of crucible bottom is then long brilliant uneven, therefore, the inequality of crucible bottom temperature causes that the nucleation of crystal is irregular and says, the formation of nucleus is randomness, there is no rule, then after nucleation, crystal is also uneven from the crystal grain that crucible bottom grows up out, ultimately causing whole silicon ingot crystal grain skewness, whole ingot quality is relatively poor, causes final battery efficiency relatively low.
Therefore, the crucible bottom temperature decisive influence to long brilliant uniformity how is broken, when crucible bottom temperature homogeneity cannot be improved, the nucleation improving crystal is regular, thus improving long brilliant uniformity, and then improving silicon ingot quality, just becoming the problem that those skilled in the art need solution badly.
Summary of the invention
It is an object of the invention to provide a kind of silicon ingot casting device, it has broken the crucible bottom temperature decisive influence to long brilliant uniformity, and when improving crucible bottom temperature homogeneity, the nucleation improving crystal is regular, thus improving long brilliant uniformity, and then improve silicon ingot quality.
For solving above-mentioned technical problem, the present invention provides a kind of silicon ingot casting device, this crucible casting device includes crucible, also include the pad being positioned over described crucible bottom, described pad deviates from and is provided with some pits on the first surface of described crucible bottom surface, described pit is uniform at described first surface, and the material melting point of described pad is higher than the material melting point of silicon ingot.
Preferably, described first surface be shaped as square.
Preferably, the square length of side of described first surface is 100mm-150mm.
Preferably, the thickness of described pad is 2mm-10mm.
Preferably, described pad fits towards the second surface of described crucible bottom surface with described crucible bottom surface.
Preferably, the material of described pad is carborundum.
Preferably, described pad has multi-disc, and each described pad is distributed in the bottom of described crucible.
Silicon ingot casting device provided by the present invention includes crucible and pad, wherein, crucible is for holding the raw material of casting silicon ingot, pad is positioned over the bottom of crucible, and this pad deviates from and is provided with some pits on the first surface of crucible bottom surface, pit is uniform on the first surface, and the material melting point of pad is higher than the fusing point of silicon ingot material；In silicon ingot preparation process, the pit that pad first surface is arranged has acted as the nucleating point at long brilliant initial stage, and pit is regular uniform on the first surface so that silicon ingot long crystalline substance initial stage nucleation is uniform, and crystal grain grows up, and final whole ingot crystal grain is also comparatively uniform；So, pit on first surface act as the nucleating point that the long crystalline substance of silicon ingot is given vent to anger, long brilliant whether uniformly unrelated with the temperature of crucible bottom, break the crucible bottom temperature decisive influence to long brilliant uniformity, when crucible bottom temperature homogeneity cannot be improved, the nucleation improving crystal is regular, thus improving long brilliant uniformity, and then improves silicon ingot quality.
In a preferred embodiment, in silicon ingot casting device provided by the present invention, the material of its pad is preferably carborundum；The fusing point of silicon carbide material is 2730 DEG C, is significantly larger than the fusing point 1420 DEG C of silicon, and in casting silicon ingot process, carborundum will not melt, and pad can reuse after cleaning, and improves the utilization rate of device, also ensure that the degree of purity of silicon ingot product simultaneously.
In another preferred embodiment, pad provided by the present invention has multi-disc, and each pad is distributed in the bottom of crucible；So, the number of pad can be selected according to the evolution specification producing silicon ingot, as after silicon ingot evolution, silico briquette is 25 pieces, correspondence is then needed to put 25 thin slices with type, after evolution, silico briquette block number is 36 pieces, correspondence is then needed to put 36 thin slices with type, by that analogy, it is ensured that the quality of every piece of silicon ingot after evolution.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of detailed description of the invention of pad provided by the present invention；
Fig. 2 is the pad provided by the present invention design sketch when being placed in crucible bottom.
Detailed description of the invention
The core of the present invention is to provide a kind of silicon ingot casting device, it has broken the crucible bottom temperature decisive influence to long brilliant uniformity, and when improving crucible bottom temperature homogeneity, the nucleation improving crystal is regular, thus improving long brilliant uniformity, and then improve silicon ingot quality.
In order to make those skilled in the art be more fully understood that technical scheme, below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is the structural representation of a kind of detailed description of the invention of pad provided by the present invention；Fig. 2 is the pad provided by the present invention design sketch when being placed in crucible bottom.
In a kind of detailed description of the invention, silicon ingot casting device provided by the present invention includes crucible and pad 1, wherein, crucible is for holding the raw material of casting silicon ingot, pad 1 is positioned over the bottom of crucible, and this pad 1 deviates from and is provided with some pits 2 on the first surface of crucible bottom surface 3, pit 2 is uniform on the first surface, and the material melting point of pad 1 is higher than the fusing point of silicon ingot material；In silicon ingot preparation process, the pit 2 that pad 1 first surface is arranged has acted as the nucleating point at long brilliant initial stage, and pit 2 is regular uniform on the first surface so that silicon ingot long crystalline substance initial stage nucleation is uniform, and crystal grain grows up, and final whole ingot crystal grain is also comparatively uniform；So, pit 2 on first surface act as the nucleating point that the long crystalline substance of silicon ingot is given vent to anger, long brilliant whether uniformly unrelated with the temperature of crucible bottom, break the crucible bottom temperature decisive influence to long brilliant uniformity, when crucible bottom temperature homogeneity cannot be improved, the nucleation improving crystal is regular, thus improving long brilliant uniformity, and then improves silicon ingot quality.
It is apparent that for ensureing being smoothed out of casting ingot process, pad 1 should be very thin laminated structure, and thickness is substantially at about 2mm-10mm, and thickness should be generally equalized everywhere.
Owing to silicon ingot mostly is square structure, adapt with this, the first surface of pad 1 be shaped as square.The everywhere shape of cross section parallel with first surface of pad 1 can be square, and with the square same size of first surface.
When first surface is square, the rectangular matrix arrangement of pit 2 that it is arranged, the distance between each adjacent two pits 2 is all equal.The number of pit 2 is more many more intensive, and during long crystalline substance, the uniformity of nucleation is more good, but it is also contemplated that situations such as production costs, pit 2 specific number should be determined according to actually used situation, does not repeat them here.
From theory, the shape of cross section of pad 1 is also not limited to as square, it is also possible to for other regularly or irregularly shapes, for instance rectangle, circle etc..
The square length of side of first surface can substantially 100mm-150mm, in order to adapt with the product specification of silicon ingot.
It is pointed out that the concrete specification such as the thickness of pad 1, length and width, pit 2 number should be determined according to the specification of silicon ingot to be prepared, do not limit at this.
Above-mentioned pad 1 fits towards the second surface of crucible bottom surface 3 with crucible bottom surface 3, and this second surface should be smooth as far as possible, to prevent from destroying the silicon nitride coating of crucible,
In above-mentioned detailed description of the invention, the material of pad 1 is preferably carborundum；The fusing point of silicon carbide material is 2730 DEG C, is significantly larger than the fusing point 1420 DEG C of silicon, and in casting silicon ingot process, carborundum will not melt, and pad 1 can reuse after cleaning, and improves the utilization rate of device, also ensure that the degree of purity of silicon ingot product simultaneously.
The material of pad 1 is also not limited to carborundum, as long as the fusing point of pad 1 material is higher than the fusing point of silicon ingot material, pad 1 will not recast in ingot process and melt, for instance the material of pad 1 can also be silicon nitride or resin with high melting point material etc..
In above-mentioned detailed description of the invention, pad 1 provided by the present invention has multi-disc, and each pad 1 is distributed in crucible bottom surface 3；So, the number of pad 1 can be selected according to the evolution specification producing silicon ingot, as after silicon ingot evolution, silico briquette is 25 pieces, correspondence is then needed to put 25 thin slices with type, after evolution, silico briquette block number is 36 pieces, correspondence is then needed to put 36 thin slices with type, by that analogy, it is ensured that the quality of every piece of silicon ingot after evolution.
Below for above-mentioned detailed description of the invention, sketch the course of processing of silicon ingot casting device provided by the present invention.
Before charging, first putting the pad 1 of the silicon carbide material of polylith rule in the crucible bottom sprayed, the thickness of pad 1 is at 2-10mm, pad 1 is square, the length of side is between 100mm to 155mm, and the second surface of this pad 1 is shiny surface, and first surface offers regularly arranged pit 2；Second surface contact crucible bottom smooth when putting, prevent from destroying silicon nitride coating, polylith pad 1 uniformly rule be placed in crucible bottom, put quantity fixed according to the evolution specification producing silicon ingot, as after silicon ingot evolution, silico briquette is 25 pieces, then needing correspondence to put 25 pads 1 with type, after evolution, silico briquette block number is 36 pieces, correspondence is then needed to put 36 pads 1 with type, by that analogy；Then carry out the operation fed, until the silicon material that expection weight will be loaded in crucible, after having fed, carry out ingot casting production work.
It is pointed out that ordinal numbers such as " first, second " described in literary composition is to distinguish same names different structure, do not indicate that certain order, more should not be construed as any restriction.
Above a kind of silicon ingot casting device provided by the present invention is described in detail.Principles of the invention and embodiment are set forth by specific case used herein, and the explanation of above example is only intended to help to understand method and the core concept thereof of the present invention.It should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention, it is also possible to the present invention carries out some improvement and modification, these improve and modify in the protection domain also falling into the claims in the present invention.
Claims (7)
1. a silicon ingot casting device, including crucible, it is characterized in that, also include the pad (1) being positioned over described crucible bottom, described pad (1) deviates from and is provided with some pits (2) on the first surface of crucible bottom surface (3), described pit (2) is uniform at described first surface, and the material melting point of described pad (1) is higher than the material melting point of silicon ingot.
2. silicon ingot casting device according to claim 1, it is characterised in that described first surface be shaped as square.
3. silicon ingot casting device according to claim 2, it is characterised in that the square length of side of described first surface is 100mm-150mm.
4. silicon ingot casting device according to claim 3, it is characterised in that the thickness of described pad (1) is 2mm-10mm.
5. silicon ingot casting device according to claim 1, it is characterised in that described pad (1) fits towards the second surface of described crucible bottom surface (3) with described crucible bottom surface (3).
6. the silicon ingot casting device according to any one of claim 1 to 5, it is characterised in that the material of described pad (1) is carborundum.
7. the silicon ingot casting device according to any one of claim 1 to 5, it is characterised in that described pad (1) has multi-disc, and each described pad (1) is distributed in described crucible bottom surface (3).
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| CN201310603804.6A CN103590105B (en) | 2013-11-25 | 2013-11-25 | A kind of silicon ingot casting device |
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| CN201310603804.6A CN103590105B (en) | 2013-11-25 | 2013-11-25 | A kind of silicon ingot casting device |
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| CN103590105A CN103590105A (en) | 2014-02-19 |
| CN103590105B true CN103590105B (en) | 2016-07-06 |
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| CN101479410A (en) * | 2006-06-23 | 2009-07-08 | Rec斯坎沃佛股份有限公司 | Method and crucible for direct solidification of semiconductor grade multi-crystalline silicon ingots |
| CN101979718A (en) * | 2010-11-30 | 2011-02-23 | 奥特斯维能源（太仓）有限公司 | Quartz crucible and method for casting quasi-single crystal |
| CN102995103A (en) * | 2011-09-08 | 2013-03-27 | 上海普罗新能源有限公司 | Crucible used for preparing quasi-monocrystalline silicon ingot, and quasi-monocrystalline silicon ingot growth method |
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