CN103579900A - V-shaped coupled cavity tunable semiconductor laser unit capable of directly conducting modulation at high speed - Google Patents
V-shaped coupled cavity tunable semiconductor laser unit capable of directly conducting modulation at high speed Download PDFInfo
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- CN103579900A CN103579900A CN201310545457.6A CN201310545457A CN103579900A CN 103579900 A CN103579900 A CN 103579900A CN 201310545457 A CN201310545457 A CN 201310545457A CN 103579900 A CN103579900 A CN 103579900A
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Abstract
The invention discloses a V-shaped coupled cavity tunable semiconductor laser unit capable of directly conducting modulation at a high speed. The V-shaped coupled cavity tunable semiconductor laser unit comprises a semi-wave coupler, a wave length reference FP resonant cavity and a wave length tuning FP resonant cavity, wherein short cavity active waveguide and short cavity passive waveguide are connected in series to form the wave length reference FP resonant cavity, long cavity active waveguide and long cavity passive waveguide are connected in series to form the wave length tuning FP resonant cavity, the ratio of the optical length of the short cavity active waveguide to the optical length of the short cavity passive waveguide is equal to the ratio of the optical length of the long cavity active waveguide to the optical length of the long cavity passive waveguide, and therefore the mode jump does not occur when the laser unit directly conducts modulation at the high speed. The laser unit can further comprise a section of thin film resistor added to the top of the semi-wave coupler so that the tuning range can be enlarged, and comprise two sections of active waveguide added outside cavities and deep etching grooves so that the threshold of the laser unit can be reduced, and an optical power meter integrated on a piece is provided. According to the V-shaped coupled cavity tunable semiconductor laser unit, the C wave section and sections in a wider range can be tuned, and performance of conducting direct modulation on each communication wave with the wave length more than 10Gbps is achieved.
Description
Technical field
The present invention relates to semiconductor laser, relate in particular to a kind of high speed and directly adjust V-type coupling cavity semiconductor laser with tunable.
Background technology
The semiconductor laser of the straight wideband adjustable of adjusting has a very wide range of applications in Access Network and data switched network at a high speed.Not only can reduce inventory cost as backup light source, can also be used to design more intelligent optical-fiber network or optical module.For example, tunable laser can realize reconfigurable optical and upload download multiplexer together with wavelength division multiplex device; Tunable laser can also form wavelength shifter together with semiconductor optical amplifier.
The single chip integrated great majority of semiconductor laser with tunable on a large scale that propose are at present all based on grating modeling, these lasers are because needs are made grating, and technique is very complicated, and needed epitaxial wafer area is also larger, cause cost very high, hindered the popularization of a lot of application.For example, Fig. 1 is the structural representation based on modulated grating Y type (MG-Y) semiconductor laser with tunable, be reported in " High-speed direct modulation of widely tunable MG-Y laser ", IEEE Photonics Technology Letters, 17 (6) (2005): this MG-Y semiconductor laser with tunable of 1157-1159. comprises a gain region, a common phase region, a MMI coupler, Yi Ge differential phase district and two gratings, structure is very complicated; Single mode steady operation realized by this laser and wavelength tuning need to regulate the Injection Current on common phase region, differential phase district and grating, the tuning algorithm that this multi-electrode is coordinated is very complicated, be unfavorable for design and the efficient mass production of laser of drive circuit for laser, and high cost has stoped the popularization of application.
For cheap semiconductor laser with tunable is provided, what is built up the Army and in 2006, has proposed a kind of semiconductor laser based on v-shaped cavity structure, be disclosed in Chinese invention patent: " V-type coupled cavity wavelength switchable semiconductor laser ", patent No. ZL 200610154587.7.This laser can be realized approximately more than 20 channel, the digital switching at 100GHz interval, but due to this design only a FP resonant cavity in two FP resonant cavitys that form V chamber be provided with a passive tuning district, laser remainder is all active, although can realize the switching of more than 20 channel, swash that to penetrate current threshold lower, but the speed of directly modulating is at a high speed subject to the restriction of the wavelength mode hopping that in chamber, charge carrier change in concentration causes, because inject after microwave signal at laser coupler, the charge carrier level of two FP resonant cavitys changes inconsistent, be easy to occur excitation mode saltus step, the restriction of so very big degree the application of this design, and this design is wanted to expand tuning range and is covered whole C-band or larger scope, the electric current that must constantly increase active area is carried out to mobile gain spectral to produce heat, injection due to large electric current, will make the noise level of laser very high, line width characteristic can worsen, power difference between different channels is also very large, and also can produce obvious impact for the life-span of laser.
Summary of the invention
Deficiency for background technology, the object of the present invention is to provide a kind of high speed directly to adjust V-type coupling cavity semiconductor laser with tunable, it can be easy to realize at a high speed directly modulation, there is again one and cover the even larger wavelength tuning range of whole C-band, and can realize power monitoring on real-time sheet by integrated optical power meter simultaneously.
The technical solution used in the present invention is:
Technical scheme 1:
The present invention includes half-wave coupler, wavelength reference FP resonant cavity and wavelength tuning FP resonant cavity; It is characterized in that: described wavelength reference FP resonant cavity consists of short cavity active waveguide and short cavity passive wave guide serial connection, wavelength tuning FP resonant cavity forms with long chamber passive wave guide serial connection by growing chamber active waveguide; The optical length ratio of short cavity active waveguide and short cavity passive wave guide equals the optical length ratio of long chamber active waveguide and long chamber passive wave guide; On short cavity active waveguide and long chamber active waveguide, be provided with modulation signal electrode, in long chamber passive wave guide, be provided with wavelength tuning electrode.
In described short cavity passive wave guide, be provided with wavelength trimming electrode.
On described short cavity active waveguide and long chamber active waveguide, be provided with heating film resistor, heating film resistor, above modulation signal electrode, has one deck electric insulation thin layer between heating film resistor and modulation signal electrode; Heating film resistor both sides are respectively arranged with hot-air isolation channel and lower hot-air isolation channel.
Technical scheme 2:
The present invention includes half-wave coupler, wavelength reference FP resonant cavity and wavelength tuning FP resonant cavity; It is characterized in that: described wavelength reference FP resonant cavity consists of short cavity active waveguide and short cavity passive wave guide serial connection, wavelength tuning FP resonant cavity forms with long chamber passive wave guide serial connection by growing chamber active waveguide; The optical length ratio of short cavity active waveguide and short cavity passive wave guide equals the optical length ratio of long chamber active waveguide and long chamber passive wave guide; On short cavity active waveguide and long chamber active waveguide, be provided with modulation signal electrode, in long chamber passive wave guide, be provided with wavelength tuning electrode, in short cavity passive wave guide, be provided with wavelength trimming electrode; Described short cavity passive wave guide is serially connected with short cavity PD active waveguide by short cavity deep etching groove, is provided with short cavity PD electrode on short cavity PD active waveguide; Long chamber passive wave guide is serially connected with long chamber PD active waveguide by long chamber deep etching groove, on the PD active waveguide of long chamber, is provided with long chamber PD electrode.
On described short cavity active waveguide and long chamber active waveguide, be provided with heating film resistor, heating film resistor, above modulation signal electrode, has one deck electric insulation thin layer between heating film resistor and modulation signal electrode; Heating film resistor both sides are respectively arranged with hot-air isolation channel and lower hot-air isolation channel.
The present invention compares with background technology, and the beneficial effect having is:
1) the present invention is without making grating, and simple in structure, cost is low, and rate of finished products is high.
2) the present invention is collaborative tuning without multi-electrode, and tuning algorithm is simple.
3) two FP resonant cavitys of the present invention adopt symmetric forms design, are all provided with passive section, and the straight timing of high speed that is more than or equal to 10Gbps speed can mode hopping, easily realizes the high speed of all channels and directly modulates.
4) the present invention adopts heating film resistor in half-wave coupler region, to produce heat with mobile gain spectral, realize the wavelength tuning range that whole C-band is even larger, but can not affect line width characteristic, emergent power harmony, noise characteristic and the working life of laser.
5) the invention provides integrated optical power meter on sheet, reduced packaging cost, increased module stability.
Accompanying drawing explanation
Fig. 1 is the structural representation based on modulated grating Y type (MG-Y) semiconductor laser with tunable in background technology.
Fig. 2 is the structural representation of the 1st embodiment of the present invention.
Fig. 3 is the power-current curve between power output and modulation signal electrode injection electric current in the 1st embodiment.
Fig. 4 changes the static tuning characteristic figure that wavelength tuning electrode injection electric current obtains in the 1st embodiment.
Fig. 5 changes the wavelength switching transient response figure that wavelength tuning electrode injection electric current obtains fast in the 1st embodiment.
Fig. 6 carries out the directly eye pattern of modulation of 10Gbps in the 1st embodiment.
Fig. 7 is the structural representation of the 2nd embodiment of the present invention.
Fig. 8 is the structural representation of the 3rd embodiment of the present invention.
Fig. 9 is the structural representation of the 4th embodiment of the present invention.
In figure: 1, half-wave coupler, 2, wavelength reference FP resonant cavity, 3, wavelength tuning FP resonant cavity, 101, short cavity active waveguide, 102, long chamber active waveguide, 103, short cavity passive wave guide, 104, long chamber passive wave guide, 105, short cavity PD active waveguide, 106, long chamber PD active waveguide, 111, deep etching face, 112, upper hot-air isolation channel, 113, lower hot-air isolation channel, 114, short cavity deep etching groove, 115, long chamber deep etching groove, 121, modulation signal electrode, 122, wavelength trimming electrode, 123, wavelength tuning electrode, 124, short cavity PD electrode, 125, long chamber PD electrode, 131, heating film resistor.
Embodiment
Below in conjunction with drawings and Examples, the present invention will be further described.
As shown in Figure 2, be the present invention straight the 1st embodiment that adjusts V-type coupling cavity semiconductor laser with tunable at a high speed.The present invention includes half-wave coupler 1, wavelength reference FP resonant cavity and wavelength tuning FP resonant cavity; Described wavelength reference FP resonant cavity 2 consists of short cavity active waveguide 101 and short cavity passive wave guide 103 serial connections, and wavelength tuning FP resonant cavity 3 consists of long chamber active waveguide 102 and long chamber passive wave guide 104 serial connections; The optical length ratio of short cavity active waveguide 101 and short cavity passive wave guide 103 equals the optical length ratio of long chamber active waveguide 102 and long chamber passive wave guide 104; On short cavity active waveguide 101 and long chamber active waveguide 102, be provided with modulation signal electrode 121, in long chamber passive wave guide 104, be provided with wavelength tuning electrode 123.
In described short cavity passive wave guide 103, be provided with wavelength trimming electrode 122.
Passive wave guide can realize by energy band technology such as biasing quantum well technology or quantum well mixings.
During laser works, on modulation signal electrode 121, inject the electric current with modulation signal, the gain with signal intensity is provided, can also provide the phase place in certain limit to adjust by bias current; The Injection Current that changes wavelength tuning electrode 123 can be realized quick wavelength tuning.For whole laser, modulation signal electrode 121 is worked and just can have been guaranteed the normal operation of laser together with wavelength tuning electrode 123; Certainly increase wavelength trimming electrode 122 and can increase the tuning flexibility of laser wavelength, also can wavelength switching by wavelength trimming electrode 122 Injection Currents, but direction with by wavelength tuning electrode 123 is tuning, compare, switching direction is reciprocal, in addition, wavelength trimming electrode 122 and wavelength tuning electrode 123 are coordinated when tuning to provide phase place adjustment, are used for realizing wavelength continuous fine adjustment among a small circle.
As shown in Figure 3, be the power-current curve between power output and modulation signal electrode injection electric current in the 1st embodiment, this curve is that wavelength trimming electrode 122 and wavelength trimming electrode 122 calculate while being all biased in 18mA.The lasing threshold electric current that can find out laser is 35mA, and when modulation signal electrode 121 Injection Currents are 100mA, power output is about 9.5mW, and Performance Ratio is more satisfactory, has met requirement in most cases.As shown in Figure 4, in the 1st embodiment, to change the static tuning characteristic figure that wavelength tuning electrode injection electric current obtains, this curve is to be respectively 420 μ m and 440 μ m at wavelength reference FP resonant cavity 2 and wavelength tuning FP resonant cavity 1, modulation signal electrode 121 and wavelength trimming electrode 122 calculate while being biased in respectively 100mA and 18mA, can see that 21 channels switchings can realize, and curent change scope is only for 9mA is to 24mA, tuning efficiency is very high.
As shown in Figure 5, be in the 1st embodiment, to change fast the wavelength switching transient response figure that wavelength tuning electrode injection electric current obtains.Tuning owing to being that the passive wave guide that adopts utilizes carrier injection effect to carry out, wavelength switching rate is very fast, can see that, lower than 8ns in the situation that, excitation wavelength just can be stablized and be switched to corresponding wavelength in figure.
For direct modulation, no matter how carrier concentration changes, and is only meeting:
Time, could realize without mode hopping work.L wherein
11, L
12, L
21with, L
22be respectively the length of short cavity active waveguide 101, short cavity passive wave guide 103, long chamber active waveguide 102 and long chamber passive wave guide 104, n
12and n
22respectively the refractive index of short cavity passive wave guide 103 and long chamber passive wave guide 104 correspondences, as long as n
12and n
22with modulation signal, do not change to realize without mode hopping and directly modulate.
Carrier concentration by:
Describe, wherein N is carrier concentration, and J is injected current density, and d is active area thickness, and e is electron charge, and A, B and C are respectively non-radiative recombination coefficient, bimolecular recombination coefficient and auger recombination coefficient, and g is gain coefficient, v
gfor group velocity, P is luminous power.For active waveguide, if luminous power changes, 2gv in formula (2)
gthis will obviously affect carrier concentration P; But for passive wave guide, due to gain coefficient, g is almost nil, 2gv
gthis can ignore P the impact of carrier concentration.
For directly modulating at a high speed, Chinese invention patent: the direct modulation rate of " V-type coupled cavity wavelength switchable semiconductor laser " (patent No. ZL 200610154587.7) is restricted, this is because two FP resonant cavitys in its design are asymmetric, wherein wavelength reference FP resonant cavity 2 is complete active, coupled zone modulated current is when changing like this, due to luminous power real-time change, be subject to 2gv in formula (2)
gthe impact of P, is changing with reference to the carrier concentration of not only having coupler section in FP resonant cavity 2, but All Ranges carrier concentration all changing; But in wavelength tuning FP resonant cavity 3, only have the carrier concentration in long chamber active waveguide 102 changing, the carrier concentration in long chamber passive wave guide 104 is unaffected.Because the refractive index of waveguide changes with carrier concentration, this pattern (1) just cannot meet, therefore directly modulation may cause mode hopping.
But the design proposing for the present invention, wavelength reference FP resonant cavity 2 consists of short cavity active waveguide 101 and short cavity passive wave guide 103, and wavelength tuning FP resonant cavity 3 consists of long chamber active waveguide 102 and long chamber passive wave guide 104.While injecting the RF signal of large-signal on modulation signal electrode 121 like this, carrier concentration in short cavity passive wave guide 103 and long chamber passive wave guide 104 can not change with luminous power, and because the optical length ratio of short cavity active waveguide and short cavity passive wave guide equals to grow chamber active waveguide and the optical length ratio of growing chamber passive wave guide, (1) formula can be satisfied always like this, make the resonant mode wavelength of two resonant cavitys change synchronizing moving with the carrier concentration in active waveguide, can mode hopping, can realize at a high speed directly modulation.
As shown in Figure 6, be in the 1st embodiment, to carry out the directly eye pattern of modulation of 10Gbps, extinction ratio has reached 8dB, can meet the requirement of Access Network and some internet.In addition, we can, by optimizing the width of electrode design and waveguide, can realize higher direct modulation rate.
As shown in Figure 7, be the present invention straight the 2nd embodiment that adjusts V-type coupling cavity semiconductor laser with tunable at a high speed.On described short cavity active waveguide 101 and long chamber active waveguide 102, be provided with heating film resistor 131, heating film resistor 131, above modulation signal electrode 121, has one deck electric insulation thin layer to isolate between heating film resistor 131 and modulation signal electrode 121; Heating film resistor 131 both sides are respectively arranged with hot- air isolation channel 112 and 113 pairs of heat of lower hot-air isolation channel limit.
The difference of the present invention and the 1st embodiment be the present invention on the basis of the 1st embodiment, increased heating film resistor 131, on hot-air isolation channel 112 and lower hot-air isolation channel 113.
Can be by the active waveguide in heating film resistor 131 heating half-wave coupler 1 regions, the gain spectral of gain material meeting red shift like this; The Best Coupling condition of half-wave coupler 1 also can red shift, and so this design can obtain wider tuning range, can't exert an influence to noise and live width, and all characteristics in the embodiment 1 that can get both.
The design that this thermal tuning adds electric tuning cannot realize at all interchannels tuning fast, but can in each Free Spectral Range, can realize tuningly fast, and this is enough to meet the requirement of some application.
As shown in Figure 8, be the present invention straight the 3rd embodiment that adjusts V-type coupling cavity semiconductor laser with tunable at a high speed.The present invention includes half-wave coupler 1, wavelength reference FP resonant cavity and wavelength tuning FP resonant cavity; Described wavelength reference FP resonant cavity 2 consists of short cavity active waveguide 101 and short cavity passive wave guide 103 serial connections, and wavelength tuning FP resonant cavity 3 consists of long chamber active waveguide 102 and long chamber passive wave guide 104 serial connections; The optical length ratio of short cavity active waveguide 101 and short cavity passive wave guide 103 equals the optical length ratio of long chamber active waveguide 102 and long chamber passive wave guide 104; On short cavity active waveguide 101 and long chamber active waveguide 102, be provided with modulation signal electrode 121, in long chamber passive wave guide 104, be provided with wavelength tuning electrode 123, in short cavity passive wave guide 103, be provided with wavelength trimming electrode 122; Described short cavity passive wave guide 103 is serially connected with short cavity PD active waveguide 105 by short cavity deep etching groove 114, is provided with short cavity PD electrode 124 on short cavity PD active waveguide 105; Long chamber passive wave guide 104 is serially connected with long chamber PD active waveguide 106 by long chamber deep etching groove 115, on long chamber PD active waveguide 106, is provided with long chamber PD electrode 125.
The difference of the present invention and the 1st embodiment is that the present invention increases short cavity PD active waveguide 105 and long chamber PD active waveguide 106 on the basis of the 1st embodiment, and these two sections of waveguides can be used as the light power meter of laser, can simplify packaging technology like this; Short cavity PD electrode 124 and long chamber PD electrode 125 also can be combined into an electrode; The deep etching face 111 that short cavity deep etching groove 114 and long chamber deep etching groove 115 have substituted in the 1st embodiment in addition, reflectivity that can be larger, makes the threshold value of whole laser lower.
The manufacture craft of the 3rd embodiment is the same with the processing technology of the 1st embodiment, and difference is in order to realize more function, and the 3rd embodiment taken more epitaxial wafer area.
As shown in Figure 9, be the present invention straight the 4th embodiment that adjusts V-type coupling cavity semiconductor laser with tunable at a high speed.On described short cavity active waveguide 101 and long chamber active waveguide 102, be provided with heating film resistor 131, heating film resistor 131, above modulation signal electrode 121, has one deck electric insulation thin layer to isolate between heating film resistor 131 and modulation signal electrode 121; Heating film resistor 131 both sides are respectively arranged with hot- air isolation channel 112 and 113 pairs of heat of lower hot-air isolation channel limit.
The difference of the present invention and the 3rd embodiment be the present invention on the basis of the 3rd embodiment, increased heating film resistor 131, on hot-air isolation channel 112 and lower hot-air isolation channel 113.Wherein heat film resistor 131 and be arranged on short cavity active waveguide 101 and long chamber active waveguide 102, between heating film resistor 131 and modulation signal electrode 121, have one deck electric insulation thin layer to isolate; Heating film resistor 131 both sides are provided with hot- air isolation channel 112 and 113 pairs of heat of lower hot-air isolation channel limit.
The same with the 2nd embodiment, the present embodiment can be obtained wider tuning range by 131 heating of heating film resistor, can't exert an influence to noise and live width, and all characteristics in the embodiment 3 that can get both.
Claims (5)
1. high speed is directly adjusted a V-type coupling cavity semiconductor laser with tunable, comprises half-wave coupler (1), wavelength reference FP resonant cavity and wavelength tuning FP resonant cavity; It is characterized in that: described wavelength reference FP resonant cavity (2) consists of short cavity active waveguide (101) and short cavity passive wave guide (103) serial connection, wavelength tuning FP resonant cavity (3) consists of long chamber active waveguide (102) and long chamber passive wave guide (104) serial connection; The optical length ratio of short cavity active waveguide (101) and short cavity passive wave guide (103) equals the optical length ratio of long chamber active waveguide (102) and long chamber passive wave guide (104); On short cavity active waveguide (101) and long chamber active waveguide (102), be provided with modulation signal electrode (121), in long chamber passive wave guide (104), be provided with wavelength tuning electrode (123).
2. a kind of high speed according to claim 1 is directly adjusted V-type coupling cavity semiconductor laser with tunable, it is characterized in that: in described short cavity passive wave guide (103), be provided with wavelength trimming electrode (122).
3. a kind of high speed according to claim 2 is directly adjusted V-type coupling cavity semiconductor laser with tunable, it is characterized in that: on described short cavity active waveguide (101) and long chamber active waveguide (102), be provided with heating film resistor (131), heating film resistor (131), in modulation signal electrode (121) top, has one deck electric insulation thin layer between heating film resistor (131) and modulation signal electrode (121); Heating film resistor (131) both sides are respectively arranged with hot-air isolation channel (112) and lower hot-air isolation channel (113).
4. high speed is directly adjusted a V-type coupling cavity semiconductor laser with tunable, comprises half-wave coupler (1), wavelength reference FP resonant cavity and wavelength tuning FP resonant cavity; It is characterized in that: described wavelength reference FP resonant cavity (2) consists of short cavity active waveguide (101) and short cavity passive wave guide (103) serial connection, wavelength tuning FP resonant cavity (3) consists of long chamber active waveguide (102) and long chamber passive wave guide (104) serial connection; The optical length ratio of short cavity active waveguide (101) and short cavity passive wave guide (103) equals the optical length ratio of long chamber active waveguide (102) and long chamber passive wave guide (104); On short cavity active waveguide (101) and long chamber active waveguide (102), be provided with modulation signal electrode (121), in long chamber passive wave guide (104), be provided with wavelength tuning electrode (123), in short cavity passive wave guide (103), be provided with wavelength trimming electrode (122); Described short cavity passive wave guide (103) is serially connected with short cavity PD active waveguide (105) by short cavity deep etching groove (114), is provided with short cavity PD electrode (124) on short cavity PD active waveguide (105); Long chamber passive wave guide (104) is serially connected with long chamber PD active waveguide (106) by long chamber deep etching groove (115), on long chamber PD active waveguide (106), is provided with long chamber PD electrode (125).
5. a kind of high speed according to claim 4 is directly adjusted V-type coupling cavity semiconductor laser with tunable, it is characterized in that: on described short cavity active waveguide (101) and long chamber active waveguide (102), be provided with heating film resistor (131), heating film resistor (131), in modulation signal electrode (121) top, has one deck electric insulation thin layer between heating film resistor (131) and modulation signal electrode (121); Heating film resistor (131) both sides are respectively arranged with hot-air isolation channel (112) and lower hot-air isolation channel (113).
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104393482A (en) * | 2014-12-08 | 2015-03-04 | 浙江大学 | Quasi-continuous tuning system and tuning method based on half-wave coupled semiconductor laser unit |
| WO2016149607A1 (en) | 2015-03-18 | 2016-09-22 | Applied Optoelectronics, Inc. | Tunable laser including parallel lasing cavities with a common output |
| CN107425405A (en) * | 2017-06-29 | 2017-12-01 | 武汉电信器件有限公司 | A kind of semiconductor laser with tunable |
| WO2018205580A1 (en) * | 2017-05-10 | 2018-11-15 | 华为技术有限公司 | Reflector structure for tunable laser and tunable laser |
| CN116148992A (en) * | 2023-04-20 | 2023-05-23 | 众瑞速联（武汉）科技有限公司 | Coupling method of silicon optical device, silicon optical device and optical chip device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393482A (en) * | 2014-12-08 | 2015-03-04 | 浙江大学 | Quasi-continuous tuning system and tuning method based on half-wave coupled semiconductor laser unit |
| WO2016149607A1 (en) | 2015-03-18 | 2016-09-22 | Applied Optoelectronics, Inc. | Tunable laser including parallel lasing cavities with a common output |
| EP3271977A4 (en) * | 2015-03-18 | 2018-11-14 | Applied Optoelectronics, Inc. | Tunable laser including parallel lasing cavities with a common output |
| WO2018205580A1 (en) * | 2017-05-10 | 2018-11-15 | 华为技术有限公司 | Reflector structure for tunable laser and tunable laser |
| CN107425405A (en) * | 2017-06-29 | 2017-12-01 | 武汉电信器件有限公司 | A kind of semiconductor laser with tunable |
| CN107425405B (en) * | 2017-06-29 | 2019-11-08 | 武汉电信器件有限公司 | A kind of semiconductor laser with tunable |
| CN116148992A (en) * | 2023-04-20 | 2023-05-23 | 众瑞速联（武汉）科技有限公司 | Coupling method of silicon optical device, silicon optical device and optical chip device |
| CN116148992B (en) * | 2023-04-20 | 2023-08-08 | 众瑞速联（武汉）科技有限公司 | Coupling method of silicon optical device, silicon optical device and optical chip device |
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Application publication date: 20140212 |