CN103579100A - Method for preparing ultra-thin copper seed crystal layer on diffusion barrier layer and application thereof - Google Patents
Method for preparing ultra-thin copper seed crystal layer on diffusion barrier layer and application thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of semiconductor integrated circuit manufacturing, and particularly relates to a method for preparing an ultra-thin copper seed crystal layer on a diffusion barrier layer and an application thereof. According to the method, an atomic layer deposition method is used for preparing the ultra-thin copper seed crystal layer, and the method includes the following steps that Cu (C5HF6O2)2 is adsorbed on the diffusion barrier layer, and the air flow is 100-500 standard milliliter per minute; diethylzinc is adsorbed on the diffusion barrier layer, and the air flow is 100-500 standard milliliter per minute. The method has the advantages that the ALD method is adopted for growing the copper seed crystal layer, under a lower process temperature, only a film with the thickness about 0.02-1nm is formed in each growth cycle, the thickness of the copper seed crystal layer can be effectively controlled, the groove filling performance is good, the adhesion property of electroplated copper and the copper seed crystal layer is improved, the reliability of the method in the integrated circuit copper interconnection application is maintained, and the method provides an ideal interconnection technology solution to technology nodes with the thickness below 22nm.
Description
Technical field
The invention belongs to semiconductor integrated circuit manufacturing technology field, be specifically related to a kind of manufacture method and application thereof of ultra-thin copper seed layer on diffusion impervious layer.
Background technology
Along with the development of very lagre scale integrated circuit (VLSIC) (VLSI) and ultra large scale integrated circuit (ULSI), integrated level improves constantly, and circuit element is more and more intensive, and chip interconnects becomes the key factor that affects chip performance.Yet due to the size restrictions of Circuits System, in VLSI and ULSI technology, the size of interconnection line is dwindled working ability has been proposed to extra requirement.This requirement comprises the accurate processing of stage construction, high aspect ratio structure feature etc.The reliability of these interconnection structures plays very important effect to the raising of the success of VLSI and ULSI and current densities.
Along with current densities increases, the live width of interconnection line, contact through hole size and other characteristic sizes all will reduce thereupon, yet the thickness of dielectric layer is dwindling of equal proportion thereupon but, and result is exactly that feature depth-to-width ratio increases.Many traditional handicrafts surpass and have any problem for 4 o'clock filling depth-to-width ratio, and therefore exploitation is applicable in high-aspect-ratio situation the development for VLSI and ULSI without cavity and jointless interconnection technique and is significant.
At present, copper and alloy thereof have been widely used in the standard technology of modern CMOS, because copper has the resistivity lower than aluminium (low approximately 35%) and higher deelectric transferred ability (be about aluminium 2 times), and copper has good thermal conductivity.This device for multifaceted integrated higher current densities and current density is highly beneficial.But copper is a kind of stable metal, can not produce volatile halide, can not adopt conventional plasma etching to form interconnection graph, what adopt at present is that mosaic technology (Damascus technics) is filled copper after by corrosive medium layer and completed.In addition, copper spreads all very fast in silicon and oxide, once enter in silicon device and will become deep energy level acceptor impurity, make device performance degeneration, therefore must between the two, increase one deck barrier layer, play copper diffusion barrier and increase copper and the adhering effect of dielectric, at present most widely used is that tantalum nitride is as diffusion impervious layer.
At present, industry mainly adopts magnetron sputtering technique to prepare diffusion impervious layer and copper seed layer, but when filling the hole of high-aspect-ratio and groove, be difficult to guarantee the homogeneity of film, therefore develop the new technique of preparing diffusion impervious layer and copper seed layer very important to the development of modern integrated circuits, current atom layer deposition techniques (Atomic Layer Deposition, ALD) has very large potentiality.Technique for atomic layer deposition is a kind ofly can carry out the monoatomic layer rank chemical vapour deposition technique that dust () rank is controlled in other words to film thickness.ALD technology was developed so far and obtains remarkable progress from the seventies in last century, and it has write into international semiconductor Technology Roadmap (ITRS), as the candidate technologies with microelectronic technique compatibility, at microelectronic, demonstrates wide application prospect.Why ALD technology is subject to industry favor, relevant with technical characterstic with his peculiar growing principle.Although ALD is a kind of chemical vapour deposition technique, compare with traditional CVD technology, still there is very big difference, the saturated chemistry in the surface of ALD technology based on carrying out is in turn from the growth course of restriction, and it is passed in reaction chamber reacting gas ALT pulse formula.An ALD reaction cycle comprises 4 steps: (1) the first reacting precursor enters reaction chamber and is chemisorbed on substrate surface in the mode of pulse; (2), after adsorption is saturated, with inert gas, unnecessary reacting precursor purge is gone out to reaction chamber; (3) then the second reacting precursor enters reaction chamber in the mode of pulse, and is chemisorbed on lip-deep precursor with the last time and reacts; (4) question response goes out reaction chamber with inert gas by unnecessary reacting precursor and accessory substance purge thereof after completely again.Whole ALD growth course is repeatedly cycled to repeat realization by one-period.The substantive characteristics of all ALD is exactly that surface reaction reaches capacity, growth is stopped, so the thickness of film is directly proportional to the completed number of times of surface reaction, i.e. reaction cycle number, the reaction cycle number that can deposit by control like this, just can realize the accurate control to film thickness.Due to its surface reaction from limit, can form uniform covering to the very large surface of depth-width ratio in addition.In addition by controlling the not number of times ratio of homology pulse cycle, also can control the content of different material in film.So, how to adopt ALD technology to come depositing ultrathin copper seed layer to determine the thickness of ultra-thin inculating crystal layer, fill the uniformity of hole, the performance of the decision-making circuit elements such as adhesiveness of electro-coppering and inculating crystal layer.
Summary of the invention
For above-mentioned problems of the prior art, the invention provides a kind of method that adopts ald mode to prepare ultra-thin copper seed layer on diffusion impervious layer, to solve the deficiencies in the prior art.
Employing ald mode provided by the invention is prepared the method for ultra-thin copper seed layer on diffusion impervious layer, and concrete steps are:
Step a. closes copper (Cu (C by two (hexafluoroacetylacetone)
5hF
6o
2)
2(Cu (hfac)
2)) be adsorbed on diffusion impervious layer, throughput is that 100-500 standard milliliter is per minute, and the duration is 1-5 second, and the carrier gas that two (hexafluoroacetylacetones) close copper is inert gas;
Step b. removes unnecessary two (hexafluoroacetylacetone) and closes copper;
Step c is by diethyl zinc (Zn (C
2h
5)
2(DEZn)) be adsorbed on diffusion impervious layer, throughput is that 100-500 standard milliliter is per minute, and the duration is 1-5 second, and the carrier gas of diethyl zinc is inert gas;
Steps d. remove unnecessary diethyl zinc;
Wherein, two (hexafluoroacetylacetones) close copper temperature is 60-150 ℃, and reaction chamber temperature is 100-250 ℃.
Further, in the present invention, step c and steps d are removed the mode that unnecessary two (hexafluoroacetylacetone) close copper and diethyl zinc and are, with inert gas purge matrix, throughput is that 100-1000 standard milliliter is per minute, and the duration is 1-30 second.
Further, in the present invention, described inert gas is nitrogen or argon gas.
The method of the ultra-thin copper seed layer of preparation provided by the invention can be used in the preparation of copper interconnection structure.Concrete steps are:
Steps A. on the substrate after any one deck wiring of interconnection structure, deposition-etch barrier layer, insulating medium layer successively;
Step B. chemical wet etching forms the groove of interconnection;
Step C. adopts magnetron sputtering mode deposit and spread barrier layer;
The method of the some above-mentioned ultra-thin copper seed layer of preparation of step D. circulation is prepared copper seed layer;
Step e. adopt electrochemical deposition mode in copper seed layer, groove to be filled up;
Step F. adopt chemico-mechanical polishing mode to remove unnecessary material, obtain smooth wafer surface.
Further, in the present invention, the material of insulating medium layer is silicon dioxide SiO
2, any one the low dielectric media in fluorinated silica SiOF, hydrocarbon doped silicon oxide SiCO:H.
Further, in the present invention, the material of etching barrier layer is silicon nitride.
Further, in the present invention, the material of diffusion impervious layer is Ta/TaN diffusion impervious layer.
Effect of the present invention
According to of the present invention, provide a kind of method that adopts ald mode to prepare ultra-thin copper seed layer on diffusion impervious layer, the ALD method of using presoma to close copper and diethyl zinc for two (hexafluoroacetylacetone) copper seed layer of growing, rely on it from the growth characteristics of restriction, lower technological temperature, each growth cycle only forms the film that is about 0.03 ~ 1 nm left and right thickness, can realize at nanoscale widely, and can utilize as required controlled circulation number of times effectively to control the thickness of copper seed layer.In the structure of high depth ratio, ultra-thin copper seed layer is prepared in high conformal, has avoided the generation of the defects such as subsequent technique Hole or gap, reduces the contact resistance in groove or through hole, thereby effectively improves the Performance And Reliability of chip.
In addition, the preparation method of a kind of copper interconnection structure provided by the invention, owing to having used the method for preparing ultra-thin copper seed layer, at existing copper interconnection structure, be on basis, utilize ald (ALD) technology on groove or through hole, to grow the super thin copper layer of one deck as electro-coppering inculating crystal layer, to improve integrated circuit characteristic size, constantly reduce and cause high-aspect-ratio hole to be difficult to the shortcoming of uniform filling, promote the performance of semiconductor chip, improve the adhesion characteristics of electro-coppering and copper seed layer, improve the ability of filling high aspect ratio trench quite, increase the accurate control ability of deposit thickness.
Accompanying drawing explanation
Fig. 1 is that the preparation method of copper interconnection structure of the present invention forms the structure chart after insulating medium layer, etching barrier layer and groove on substrate.
Fig. 2 is that the preparation method of copper interconnection structure of the present invention forms the structure chart after diffusion impervious layer.
Fig. 3 is that the preparation method of copper interconnection structure of the present invention forms the structure chart after copper seed layer.
Fig. 4 is that the preparation method of copper interconnection structure of the present invention forms the structure chart after electrochemically depositing copper.
Fig. 5 is that the preparation method of copper interconnection structure of the present invention removes the structure chart after unnecessary material.
Fig. 6 is the TEM image that the preparation method of copper interconnection structure of the present invention obtains ultra-thin copper seed layer.
Fig. 7 is the TEM image enlarged drawing that the preparation method of copper interconnection structure of the present invention obtains ultra-thin copper seed layer.
The vertical university of Fig. 8 North Carolina, USA adopts standard direct current sputtering technology sputter copper to fill the SEM structure chart of sub-micron contact hole.
Fig. 9 Chemnitz, Germany polytechnical university adopts the SEM structure chart of chemical vapour deposition (CVD) copper filling contact hole.
Figure 10 is x-ray photoelectron power spectrum (XPS) figure that the preparation method of copper interconnection structure of the present invention obtains ultra-thin copper seed layer.
Figure 11 Chemnitz, Germany polytechnical university adopts the x-ray photoelectron energy spectrogram after technique for atomic layer deposition copper layer reduction.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
The preparation method of copper interconnection structure is as follows:
Steps A. as shown in Figure 1, on the substrate 201,202 after any one deck wiring of interconnection structure, first deposition-etch barrier layer 203, deposit insulating medium layer 204 again.
The material of insulating medium layer 204 is silicon dioxide SiO
2, the material of etching barrier layer 203 is silicon nitride.
Step B. as shown in Figure 1, adopts standard dual damascene process flow process to carry out the groove that chemical wet etching forms interconnection.
Step C. as shown in Figure 2, adopts magnetron sputtering mode to deposit Ta/TaN diffusion impervious layer 205.
Step D. as shown in Figure 3, adopts ald mode on barrier layer, to prepare ultra-thin copper seed layer 206.
The presoma of depositing ultrathin copper seed layer closes copper and diethyl zinc for two (hexafluoroacetylacetone), and wherein two (hexafluoroacetylacetone) closes copper and need be heated to 60 ℃, and reaction chamber need be heated to 100 ℃.The copper of a circulation of deposition, comprises the steps:
1) will two (hexafluoroacetylacetones) close copper and be adsorbed on diffusion impervious layer, throughput is arranged on to 100 standard milliliters per minute, 5 seconds duration, wherein two (hexafluoroacetylacetone) to close the carrier gas of copper be nitrogen;
2) by purging with nitrogen gas diffusion impervious layer, throughput is arranged on to 100 standard milliliters per minute, the duration is 30 seconds;
3) diethyl zinc is adsorbed on diffusion impervious layer, throughput is arranged on to 100 standard milliliters per minute, 5 seconds duration, wherein the carrier gas of diethyl zinc is nitrogen;
4) by purging with nitrogen gas diffusion impervious layer, throughput is arranged on to 100 standard milliliters per minute, the duration is 30 seconds.
The copper that repeats limited number of times circulates to reach the thickness of target copper seed layer, and the thickness of the ultra-thin copper seed layer in the present invention can be selected to adjust between 2-10 nanometer.It is in 4-20 groove that the ultra-thin inculating crystal layer that adopts the method to deposit can evenly be inserted depth-to-width ratio.In the present embodiment, cycle-index is 100 times, obtains the copper seed layer of 3 nanometer thickness.
Step e. as shown in Figure 4, adopt electrochemical copper depositional mode with copper, groove to be filled up in copper seed layer, form copper coating 207.
Step F. as shown in Figure 5, adopt chemico-mechanical polishing mode to remove unnecessary material, unnecessary copper, copper seed layer and diffusion impervious layer, obtain smooth wafer surface.
Embodiment 2
The preparation method of copper interconnection structure is as follows:
Steps A. as shown in Figure 1, on the substrate 201,202 after any one deck wiring of interconnection structure, first deposition-etch barrier layer 203, deposit insulating medium layer 204 again.
The material of insulating medium layer 204 is silicon dioxide SiO
2, the material of etching barrier layer 203 is silicon nitride.
Step B. as shown in Figure 1, adopts standard dual damascene process flow process to carry out the groove that chemical wet etching forms interconnection.
Step C. as shown in Figure 2, adopts magnetron sputtering mode to deposit Ta/TaN diffusion impervious layer 205.
Step D. as shown in Figure 3, adopts ald mode on barrier layer, to prepare ultra-thin copper seed layer 206.
The presoma of depositing ultrathin copper seed layer closes copper and diethyl zinc for two (hexafluoroacetylacetone), and wherein two (hexafluoroacetylacetone) closes copper and need be heated to 70 ℃, and reaction chamber need be heated to 120 ℃.The copper of a circulation of deposition, comprises the steps:
1) will two (hexafluoroacetylacetones) close copper and be adsorbed on diffusion impervious layer, throughput is arranged on to 300 standard milliliters per minute, 2 seconds duration, wherein two (hexafluoroacetylacetone) to close the carrier gas of copper be nitrogen;
2) by purging with nitrogen gas diffusion impervious layer, throughput is arranged on to 300 standard milliliters per minute, the duration is 10 seconds;
3) diethyl zinc is adsorbed on diffusion impervious layer, throughput is arranged on to 300 standard milliliters per minute, 1 second duration, wherein the carrier gas of diethyl zinc is nitrogen;
4) by purging with nitrogen gas diffusion impervious layer, throughput is arranged on to 300 standard milliliters per minute, the duration is 10 seconds.
The copper that repeats limited number of times circulates to reach the thickness of target copper seed layer, and the thickness of the ultra-thin copper seed layer in the present invention can be selected to adjust between 2-10 nanometer.It is in 4-20 groove that the ultra-thin inculating crystal layer that adopts the method to deposit can evenly be inserted depth-to-width ratio.In the present embodiment, cycle-index is 100 times, obtains the copper seed layer of 3 nanometer thickness.
Step e. as shown in Figure 4, adopt electrochemical copper depositional mode with copper, groove to be filled up in copper seed layer, form copper coating 207.
Step F. as shown in Figure 5, adopt chemico-mechanical polishing mode to remove unnecessary material, unnecessary copper, copper seed layer and diffusion impervious layer, obtain smooth wafer surface.
Embodiment 3
The preparation method of copper interconnection structure is as follows:
Steps A. as shown in Figure 1, on the substrate 201,202 after any one deck wiring of interconnection structure, first deposition-etch barrier layer 203, deposit insulating medium layer 204 again.
The material of insulating medium layer 201 is fluorinated silica SiOF, and the material of etching barrier layer is silicon nitride.
As shown in Figure 1, chemical wet etching forms the groove 210 of interconnection to step B..
Step C. as shown in Figure 2, adopts magnetron sputtering mode to deposit Ta/TaN diffusion impervious layer 205.
Step D. as shown in Figure 3, adopts ald mode on barrier layer, to prepare ultra-thin copper seed layer 206.
The presoma of depositing ultrathin copper seed layer closes copper and diethyl zinc for two (hexafluoroacetylacetone), and wherein two (hexafluoroacetylacetone) closes copper and need be heated to 80 ℃, and reaction chamber need be heated to 230 ℃.The copper of a circulation of deposition, comprises the steps:
1) will two (hexafluoroacetylacetones) close copper and be adsorbed on diffusion impervious layer, throughput is arranged on to 300 standard milliliters per minute, 2 seconds duration, wherein two (hexafluoroacetylacetone) to close the carrier gas of copper be argon gas;
2) by argon gas purge diffusion impervious layer, throughput is arranged on to 500 standard milliliters per minute, the duration is 4 seconds;
3) diethyl zinc is adsorbed on diffusion impervious layer, throughput is arranged on to 300 standard milliliters per minute, 2 seconds duration, wherein the carrier gas of diethyl zinc is argon gas;
4) by argon gas purge diffusion impervious layer, throughput is arranged on to 500 standard milliliters per minute, the duration is 4 seconds.
The copper that repeats limited number of times circulates to reach the thickness of target copper seed layer, and the thickness of the ultra-thin copper seed layer in the present invention can be selected to adjust between 2-10 nanometer.It is in 4-20 groove that the ultra-thin inculating crystal layer that adopts the method to deposit can evenly be inserted depth-to-width ratio.In the present embodiment, cycle-index is 100 times, obtains the copper seed layer of 15 nanometer thickness.
Step e. as shown in Figure 4, adopt electrochemical copper depositional mode with copper, groove to be filled up in copper seed layer, form copper coating 207.
Step F. as shown in Figure 5, adopt chemico-mechanical polishing mode to remove unnecessary material, unnecessary copper, copper seed layer and diffusion impervious layer, obtain smooth wafer surface.
Embodiment 4
The preparation method of copper interconnection structure is as follows:
Steps A. as shown in Figure 1, on the substrate 201,202 after any one deck wiring of interconnection structure, first deposition-etch barrier layer 203, deposit insulating medium layer 204 again.
The material of insulating medium layer 201 is porous carbon hydrogen doping silica SiCO:H, and the material of etching barrier layer is silicon nitride.
As shown in Figure 1, chemical wet etching forms the groove 210 of interconnection to step B..
Step C. as shown in Figure 2, adopts magnetron sputtering mode to deposit Ta/TaN diffusion impervious layer 205.
Step D. as shown in Figure 3, adopts ald mode on barrier layer, to prepare ultra-thin copper seed layer.
The presoma of depositing ultrathin copper seed layer closes copper and diethyl zinc for two (hexafluoroacetylacetone), and wherein two (hexafluoroacetylacetone) closes copper and need be heated to 80 ℃, and reaction chamber need be heated to 250 ℃.The copper of a circulation of deposition, comprises the steps:
1) will two (hexafluoroacetylacetones) close copper and be adsorbed on diffusion impervious layer, throughput is arranged on to 500 standard milliliters per minute, 1 second duration, wherein two (hexafluoroacetylacetone) to close the carrier gas of copper be argon gas;
2) by argon gas purge diffusion impervious layer, throughput is arranged on to 1000 standard milliliters per minute, the duration is 1 second;
3) diethyl zinc is adsorbed on diffusion impervious layer, throughput is arranged on to 500 standard milliliters per minute, 1 second duration, wherein the carrier gas of diethyl zinc is argon gas;
4) by argon gas purge diffusion impervious layer, throughput is arranged on to 1000 standard milliliters per minute, the duration is 1 second.
The copper that repeats limited number of times circulates to reach the thickness of target copper seed layer, and the thickness of the ultra-thin copper seed layer in the present invention can be selected to adjust between 2-10 nanometer.It is in 4-20 groove that the ultra-thin inculating crystal layer that adopts the method to deposit can evenly be inserted depth-to-width ratio.In the present embodiment, cycle-index is 200 times, obtains the copper seed layer of 20 nanometer thickness.
Step e. as shown in Figure 4, adopt electrochemical copper depositional mode with copper, groove to be filled up in copper seed layer, form copper coating 207.
Step F. as shown in Figure 5, adopt chemico-mechanical polishing mode to remove unnecessary material, unnecessary copper, copper seed layer and diffusion impervious layer, obtain smooth wafer surface.
experiment test
Use the wafer of preparation method's acquisition of copper interconnection structure provided by the invention to test as follows:
1, the TEM image measurement of ultra-thin copper seed layer
Fig. 6 is the TEM image that the preparation method of copper interconnection structure of the present invention obtains ultra-thin copper seed layer.
Fig. 7 is the TEM image enlarged drawing that the preparation method of copper interconnection structure of the present invention obtains ultra-thin copper seed layer.
As shown in Figure 6 and Figure 7, can find out insulating medium layer 201, diffusion impervious layer 205 and ultra-thin copper seed layer 206 structures.From the ratio of Fig. 7, can find out that ultra-thin copper seed layer 206 is for the even continuous film of thickness 3 nanometers.
The vertical university of Fig. 8 North Carolina, USA adopts standard direct current sputtering technology sputter copper to fill the SEM structure chart of sub-micron contact hole.（Directional?copper?deposition?using?dc?magnetron?self-sputtering，Zbigniew?J.?Radzimski,?Witold?M.?Posadowski,?Stephen?M.?Rossnagel,?and?Shoso?Shingubara）
Vertical university adopts direct current sputtering (DC sputtering) deposited copper filling vias to compare with North Carolina, USA, adopts the inventive method to have the advantages that filled with film is even, continuous, conformality is good.
Fig. 9 Chemnitz, Germany polytechnical university adopts the SEM structure chart of chemical vapour deposition (CVD) copper filling contact hole.Adopt chemical vapor deposition (CVD) deposited copper filling vias to compare with Chemnitz, Germany polytechnical university, adopt the inventive method can realize thickness and control more accurately, can greatly dwindle applicable size range.As can be seen here, this method in filling contact hole during copper seed layer, realizes and controls simple and reliablely, and quality is high, effective, can realize at nanoscale widely, and in the structure of high depth ratio, ultra-thin copper seed layer is prepared in high conformal.
2, the x-ray photoelectron power spectrum (XPS) of ultra-thin copper seed layer test
Figure 10 is x-ray photoelectron power spectrum (XPS) figure that the preparation method of copper interconnection structure of the present invention obtains ultra-thin copper seed layer.
Figure 11 Chemnitz, Germany polytechnical university adopts the x-ray photoelectron energy spectrogram after technique for atomic layer deposition copper layer reduction.
As shown in Figure 10 and Figure 11, adopt in the x-ray photoelectron power spectrum of deposited copper of the present invention, Cu 2
p 3/2the combination at peak can be 932.4 eV, and Cu 2
p 1/2the combination at peak can be 952.2 eV, and both differ 19.8 eV, and peak shape is symmetrical, does not occur the assorted peaks such as Cu-O key.As a comparison, Chemnitz, Germany polytechnical university microtechnology center equally also adopts technique for atomic layer deposition, but its film impurities content of preparing is high, contains a large amount of oxides, even if taked reduction measure, the film quality that still can not prepare with this method is compared.As can be seen here, the inventive method is simple and easy to do, does not need the copper film purity of subsequent treatment and deposition high, and impurity is few.
Claims (8)
1. on diffusion impervious layer, prepare a method for ultra-thin copper seed layer, it is characterized in that adopting ald mode, concrete steps are:
Step a. closes copper by two (hexafluoroacetylacetone) and is adsorbed on diffusion impervious layer, and throughput is that 100-500 standard milliliter is per minute, and the duration is 1-5 second, and the carrier gas that two (hexafluoroacetylacetones) close copper is inert gas;
Step b. removes unnecessary two (hexafluoroacetylacetone) and closes copper;
Step c is adsorbed on diethyl zinc on diffusion impervious layer, and throughput is that 100-500 standard milliliter is per minute, and the duration is 1-5 second, and the carrier gas of diethyl zinc is described inert gas;
Steps d. remove unnecessary diethyl zinc;
Wherein, two (hexafluoroacetylacetones) close copper temperature is 60-150 ℃, and reaction chamber temperature is 100-250 ℃.
2. the method for the ultra-thin copper seed layer of preparation according to claim 2, it is characterized in that: the mode that copper and diethyl zinc are closed in step c and steps d removing unnecessary two (hexafluoroacetylacetone) is, with matrix described in described inert gas purge, throughput is that 100-1000 standard milliliter is per minute, and the duration is 1-30 second.
3. the method for the ultra-thin copper seed layer of preparation according to claim 2, is characterized in that: described inert gas is nitrogen or argon gas.
4. the application of the method for the ultra-thin copper seed layer of preparation as described in one of claim 1-3 in copper interconnection structure preparation.
5. application according to claim 4, is characterized in that, concrete steps are:
Steps A. on the substrate after any one deck wiring of interconnection structure, deposition-etch barrier layer, insulating medium layer successively;
Step B. chemical wet etching forms the groove of interconnection;
Step C. adopts magnetron sputtering mode deposit and spread barrier layer;
The method of preparing ultra-thin copper seed layer described in any one in step D. circulation several times claims 1 to 3 is prepared copper seed layer;
Step e. adopt electrochemical deposition mode in described copper seed layer, described groove to be filled up;
Step F. adopt chemico-mechanical polishing mode to remove unnecessary material, obtain smooth wafer surface.
6. application according to claim 5, is characterized in that: the material of described insulating medium layer is any one the low dielectric media in silicon dioxide, fluorinated silica, hydrocarbon doped silicon oxide.
7. application according to claim 5, is characterized in that: the material of described etching barrier layer is silicon nitride.
8. application according to claim 5, is characterized in that: described diffusion impervious layer is Ta/TaN diffusion impervious layer.
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| CN106868470A (en) * | 2017-03-01 | 2017-06-20 | 吉林大学 | A kind of utilization technique for atomic layer deposition is by replacing the method that reaction prepares transparent Copper thin film conductive electrode |
| CN112151504A (en) * | 2020-08-17 | 2020-12-29 | 复旦大学 | Copper interconnection structure with hole sealing layer and preparation method thereof |
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| CN102832198A (en) * | 2012-09-25 | 2012-12-19 | 复旦大学 | Copper interconnection structure adopting novel alloy seed crystal layer and preparation method of structure |
| CN103337469A (en) * | 2013-06-15 | 2013-10-02 | 复旦大学 | Method and system for in-situ deposition of barrier layer and seed crystal layer |
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| US20050054191A1 (en) * | 2003-09-04 | 2005-03-10 | Chen-Hua Yu | Interconnect with composite barrier layers and method for fabricating the same |
| CN102832198A (en) * | 2012-09-25 | 2012-12-19 | 复旦大学 | Copper interconnection structure adopting novel alloy seed crystal layer and preparation method of structure |
| CN103337469A (en) * | 2013-06-15 | 2013-10-02 | 复旦大学 | Method and system for in-situ deposition of barrier layer and seed crystal layer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106868470A (en) * | 2017-03-01 | 2017-06-20 | 吉林大学 | A kind of utilization technique for atomic layer deposition is by replacing the method that reaction prepares transparent Copper thin film conductive electrode |
| CN112151504A (en) * | 2020-08-17 | 2020-12-29 | 复旦大学 | Copper interconnection structure with hole sealing layer and preparation method thereof |
| CN112151504B (en) * | 2020-08-17 | 2022-04-29 | 复旦大学 | Copper interconnection structure with hole sealing layer and preparation method thereof |
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