CN103579090A - Schottky through hole manufacturing technological method - Google Patents
Schottky through hole manufacturing technological method Download PDFInfo
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- CN103579090A CN103579090A CN201210283244.6A CN201210283244A CN103579090A CN 103579090 A CN103579090 A CN 103579090A CN 201210283244 A CN201210283244 A CN 201210283244A CN 103579090 A CN103579090 A CN 103579090A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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Abstract
The invention discloses a schottky through hole manufacturing technological method. The method comprises the steps of etching a schottky through hole, respectively forming a first blocking layer on the two sides, the inner wall and the bottom of the schottky through hole, forming metal layers on the first blocking layers, forming second blocking layers on the metal layers, using metal tungsten to fill the schottky through hole, and re-etching the metal tungsten. According to the method, chemical air phase sediment is adopted to replace plasma sputtering film formation, the step coverage of the through hole is effectively improved; meanwhile, metal layer aluminum silicone and the formation of the second blocking layers are utilized, so that the characteristics of large-power components can be effectively improved, electric leakage current is reduced, the service life of the components is prolonged, and utilization power of the components is reduced.
Description
Technical field
The present invention relates to the manufacture method of through hole in a kind of semiconductor applications, particularly relate to a kind of process for making of Schottky through hole.
Background technology
Schottky junction is a kind of simple metal and semi-conductive interface, and it is similar to PN junction, has nonlinear impedance characteristic.The W.H. Schottky model of advancing a theory of Germany in 1938, its basic principle is because semi-conductive work function is less than metal, therefore when metal contacts with semiconductor, electronics just flows into metal from semiconductor, at semiconductor surface layer, form a space charge region being formed by charged immovable foreign ion, stop the electronics in semiconductor to continue to flow into metal.Titanium and titanium nitride, as barrier layer, also can effectively provide the loss of this prevention electronics.
Due in high power device, titanium and titanium nitride do not reach the ability that stops electronics to move completely, therefore, need provide the metal that a kind of work function is contrary, to stop this movement completely, reduce leakage current, improve the characteristic of device and reduce energy power consumption.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of process for making of Schottky through hole.By the method, can effectively improve high power device (for example Power MOS product power supply product) characteristic, reduce leakage current, extend device useful life, reduce device and use power.
For solving the problems of the technologies described above, the process for making of Schottky through hole of the present invention, comprises step:
(1) etching of Schottky through hole;
(2) in both sides, inwall and the bottom of Schottky through hole, form ground floor barrier layer;
(3) on ground floor barrier layer, form metal level;
(4), on metal level, form second layer barrier layer;
(5) tungsten is filled Schottky through hole;
(6) return and carve tungsten.
In described step (1), the method for etching, comprising: dry etching or wet etching.
In described step (2), the material on ground floor barrier layer comprises: by titanium layer and the formed ground floor of the titanium nitride layer barrier layer that is positioned at titanium layer top; Wherein, titanium layer is through adopting physical sputtering film-forming process to form, and the thickness of titanium layer (film forming) is 10～800 dusts, and sputter temperature is 10～500 ℃, and pressure is 1～10torr; Titanium nitride layer, through adopting metal organic chemical vapor deposition technique to form, thickness 10～500 dusts of titanium nitride layer (film forming), sputter temperature is 10～500 ℃, pressure is 1～10torr.
In described step (3), metal level comprises: the formed metal level of aluminium copper silicon; Wherein, in aluminium copper silicon, silicone content 0.01～5%, copper content 0.01～5%; This metal level is through adopting physical sputtering film-forming process to form, and the thickness of metal level (film forming) is 10～2000 dusts, and sputter temperature is 10～500 ℃, and pressure is 1～10torr.
In described step (4), the material on second layer barrier layer comprises: by titanium layer and the formed second layer of the titanium nitride layer barrier layer that is positioned at titanium layer top, or only by the formed second layer of titanium nitride layer barrier layer; Wherein, titanium layer is through adopting physical sputtering film-forming process to form, and the thickness of titanium layer (film forming) is 10～800 dusts, and sputter temperature is 10～500 ℃, and pressure is 1～10torr; Titanium nitride layer is through adopting physical sputtering film-forming process to form, and the thickness of titanium nitride layer (film forming) is 10～800 dusts, and sputter temperature is 10～500 ℃, and pressure is 1～10torr.
In described step (5), the method for filling is: adopt metal organic chemical vapor deposition technique, and 200～500 ℃ of depositing temperatures, pressure is 20～200torr.
In described step (6), adopt dry etch process to remove surface metal tungsten, while being etched to the second barrier layer, stop etching.
The present invention is by adopting chemical vapour deposition (CVD) to replace plasma sputtering film forming, effectively improved the step coverage of through hole, adopt the formation on metal level aluminium silicone and second layer barrier layer simultaneously, can effectively improve high power device (for example Power MOS product power supply product) characteristic, reduce leakage current, extend device useful life, reduce device and use power.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation:
Fig. 1 is processing step flow chart of the present invention;
Fig. 2 is the schematic diagram after Schottky via etch;
Fig. 3 is the schematic diagram after ground floor barrier layer forms;
Fig. 4 is the schematic diagram after metal level forms;
Fig. 5 is the schematic diagram after second layer barrier layer forms;
Fig. 6 is the schematic diagram after tungsten is filled;
Fig. 7 is that tungsten returns the schematic diagram after quarter;
Fig. 8 is the SEM(scanning electron microscopy of Schottky tangent plane of the present invention) picture;
Fig. 9 is the leakage current comparison diagram of the present invention and existing technique, and wherein, A represents existing technique, and B represents that the thickness of metal level is 1000 dusts, and C represents that the thickness of metal level is 800 dusts.
In figure, description of reference numerals is as follows:
1 is ground floor barrier layer, and 2 is metal level, and 3 is second layer barrier layer, and 4 is tungsten.
Embodiment
The process for making of Schottky through hole of the present invention, as shown in Figure 1, comprises step:
(1) adopt a kind of in conventional dry etching or wet etching or 2 kinds, carry out the etching of Schottky through hole, as shown in Figure 2;
(2) in both sides, inwall and the bottom of Schottky through hole, form ground floor barrier layer 1, as shown in Figure 3;
Wherein, the material on ground floor barrier layer comprises: by the titanium layer as bottom and the formed ground floor of the titanium nitride layer barrier layer 1 that is positioned at titanium layer top; Titanium layer is through adopting physical sputtering film-forming process to form, and the thickness of titanium layer is 10～800 dusts, and sputter temperature is 10～500 ℃, and pressure is 1～10torr; Titanium nitride layer forms through employing metal organic chemical vapor deposition technique, thickness 10～500 dusts of titanium nitride layer, and sputter temperature is 10～500 ℃, pressure is 1～10torr.
(3), on ground floor barrier layer 1, form metal level 2, as shown in Figure 4;
Wherein, this metal level 2 comprises: the formed metal level 2 of aluminium copper silicon; The metal level of this aluminium copper silicon (weight content 0.01～5% of silicon, the weight content 0.01～5% of copper) is through adopting physical sputtering film-forming process to form, and the thickness of metal level is 10～2000 dusts, and sputter temperature is 10～500 ℃, and pressure is 1～10torr.
(4), on metal level 2, form second layer barrier layer 3, as shown in Figure 5;
Wherein, the material on this second layer barrier layer 3 comprises: by titanium layer and the formed second layer of the titanium nitride layer barrier layer 3 that is positioned at titanium layer top, or only by the formed second layer of single titanium nitride layer barrier layer 3; Wherein, titanium layer is through adopting physical sputtering film-forming process to form, and the thickness of titanium layer is 10～800 dusts, and sputter temperature is 10～500 ℃, and pressure is 1～10torr; Titanium nitride layer is through adopting physical sputtering film-forming process to form, and the thickness of titanium nitride is 10～800 dusts, and sputter temperature is 10～500 ℃, and pressure is 1～10torr.
(5) adopt metal organic chemical vapor deposition technique, carry out tungsten 4 and fill Schottky through hole, as shown in Figure 6, wherein, 200～500 ℃ of depositing temperatures, pressure is 20～200torr.
(6) adopt dry etch process, return and carve tungsten 4, to remove surface metal tungsten 4, when being etched to the second barrier layer 3, stop etching, as shown in Figure 7.
According to aforesaid operations step, can carry out the making of Schottky through hole, as shown in Figure 8, wherein, some concrete manufacturing conditions can be defined as follows the SEM picture of formed a kind of Schottky tangent plane:
The wide ratio of height of Schottky through hole is 3:1～4:1; Ground floor barrier layer 1 is that the Ti layer of 200 ± 50 dusts and TiN layer that the thickness on Ti layer is 200 ± 50 dusts are formed by the thickness as bottom; The metal level 2 of interstitial growth is formed by layer of metal aluminium copper silicon, and wherein, the thickness of metal level 2 is 1000 ± 200 dusts, Cu content 0.5 ± 0.07%, Si content 1 ± 0.1%; Second layer barrier layer 3 is comprised of the TiN layer on Ti layer and Ti layer.
According to above-mentioned qualifications, can carry out the making of Schottky through hole, wherein, more specifically qualifications is as follows:
Adopt dry etching, etching depth-width ratio is the Schottky through hole of 3.7:1, by physical gas-phase deposite method in the both sides of Schottky through hole, the ground floor barrier layer 1 that formed by the TiN layer of the Ti layer of 200 dusts and 200 dusts that form on Ti layer of inwall and bottom growth one deck.On this ground floor barrier layer 1, by physical gas-phase deposite method, growth one deck aluminium copper silicon is 1000 dusts as the thickness of metal level 2(metal level 2, Cu content 0.5 ± 0.07%, Si content 1 ± 0.1%).Then, on metal level 2, by physical gas-phase deposite method, grow behind the second layer barrier layer 3 that one deck is comprised of the TiN layer of the Ti layer of 350 dusts and 400 dusts that form on Ti layer, adopt mocvd method to carry out tungsten 4 and fill Schottky through hole, form after the through hole after filling, adopt dry etching to carry out tungsten and carve for 4 times, be etched to second layer barrier layer and stop.
For the Schottky through hole forming, adopt through hole to add reversed bias voltage method, detect, result shows, the leakage current of this Schottky has obviously and reduces (as shown in the B in Fig. 9).
Adopt dry etching, etching depth-width ratio is the Schottky through hole of 3.7:1, by physical gas-phase deposite method in the both sides of Schottky through hole, the ground floor barrier layer 1 that formed by the TiN layer of the Ti layer of 200 dusts and 200 dusts that form on Ti layer of inwall and bottom growth one deck.On this ground floor barrier layer 1, by physical gas-phase deposite method, growth one deck aluminium copper silicon is 800 dusts as the thickness of metal level 2(metal level 2, Cu content 0.5 ± 0.07%, Si content 1 ± 0.1%).Then, on metal level 2, by physical gas-phase deposite method, grow behind the second layer barrier layer 3 that one deck is comprised of the TiN layer of the Ti layer of 350 dusts and 400 dusts that form on Ti layer, adopt mocvd method to carry out tungsten 4 and fill Schottky through hole, form after the through hole after filling, adopt dry etching to carry out tungsten and carve for 4 times, be etched to second layer barrier layer and stop.
For the Schottky through hole forming, adopt through hole to add reversed bias voltage method, detect, result demonstration, the leakage current of this Schottky reduces (as shown in the C in Fig. 9).
Claims (10)
1. a process for making for Schottky through hole, is characterized in that, comprises step:
(1) etching of Schottky through hole;
(2) in both sides, inwall and the bottom of Schottky through hole, form ground floor barrier layer;
(3) on ground floor barrier layer, form metal level;
(4), on metal level, form second layer barrier layer;
(5) tungsten is filled Schottky through hole;
(6) return and carve tungsten.
2. the method for claim 1, is characterized in that: in described step (1), the method for etching, comprising: dry etching or wet etching; The wide ratio of height of Schottky through hole is 3:1～4:1.
3. the method for claim 1, is characterized in that: in described step (2), the material on ground floor barrier layer comprises: by titanium layer and the formed ground floor of the titanium nitride layer barrier layer that is positioned at titanium layer top.
4. method as claimed in claim 3, is characterized in that: described titanium layer, and through adopting physical sputtering film-forming process to form, the thickness of titanium layer is 10～800 dusts, and sputter temperature is 10～500 ℃, and pressure is 1～10torr;
Described titanium nitride layer, through adopting metal organic chemical vapor deposition technique to form, thickness 10～500 dusts of titanium nitride layer, sputter temperature is 10～500 ℃, pressure is 1～10torr.
5. the method for claim 1, is characterized in that: in described step (3), metal level comprises: the formed metal level of aluminium copper silicon.
6. method as claimed in claim 5, is characterized in that: in described aluminium copper silicon, and silicone content 0.01～5%, copper content 0.01～5%;
Described metal level, through adopting physical sputtering film-forming process to form, the thickness of metal level is 10～2000 dusts, and sputter temperature is 10～500 ℃, and pressure is 1～10torr.
7. the method for claim 1, it is characterized in that: in described step (4), the material on second layer barrier layer comprises: by titanium layer and the formed second layer of the titanium nitride layer barrier layer that is positioned at titanium layer top, or only by the formed second layer of titanium nitride layer barrier layer.
8. method as claimed in claim 7, is characterized in that: described titanium layer, and through adopting physical sputtering film-forming process to form, the thickness of titanium layer is 10～800 dusts, and sputter temperature is 10～500 ℃, and pressure is 1～10torr;
Described titanium nitride layer, through adopting physical sputtering film-forming process to form, the thickness of titanium nitride layer is 10～800 dusts, and sputter temperature is 10～500 ℃, and pressure is 1～10torr.
9. the method for claim 1, is characterized in that: in described step (5), the method for filling is: adopt metal organic chemical vapor deposition technique, and 200～500 ℃ of depositing temperatures, pressure is 20～200torr.
10. the method for claim 1, is characterized in that: in described step (6), adopt dry etch process to remove surface metal tungsten, while being etched to the second barrier layer, stop etching.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210283244.6A CN103579090A (en) | 2012-08-10 | 2012-08-10 | Schottky through hole manufacturing technological method |
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| CN201210283244.6A CN103579090A (en) | 2012-08-10 | 2012-08-10 | Schottky through hole manufacturing technological method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1697156A (en) * | 2004-05-10 | 2005-11-16 | 海力士半导体有限公司 | Method for fabricating metal interconnection line with use of barrier metal layer formed in low temperature |
| US20080246082A1 (en) * | 2007-04-04 | 2008-10-09 | Force-Mos Technology Corporation | Trenched mosfets with embedded schottky in the same cell |
| CN102082147A (en) * | 2009-10-26 | 2011-06-01 | 万国半导体股份有限公司 | Multiple layer barrier metal for device component formed in contact trench |
| CN102104018A (en) * | 2009-12-18 | 2011-06-22 | 上海华虹Nec电子有限公司 | Method for reducing Schottky contact electric leakage formed in contact holes |
-
2012
- 2012-08-10 CN CN201210283244.6A patent/CN103579090A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1697156A (en) * | 2004-05-10 | 2005-11-16 | 海力士半导体有限公司 | Method for fabricating metal interconnection line with use of barrier metal layer formed in low temperature |
| US20080246082A1 (en) * | 2007-04-04 | 2008-10-09 | Force-Mos Technology Corporation | Trenched mosfets with embedded schottky in the same cell |
| CN102082147A (en) * | 2009-10-26 | 2011-06-01 | 万国半导体股份有限公司 | Multiple layer barrier metal for device component formed in contact trench |
| CN102104018A (en) * | 2009-12-18 | 2011-06-22 | 上海华虹Nec电子有限公司 | Method for reducing Schottky contact electric leakage formed in contact holes |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140120 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140120 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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Application publication date: 20140212 |