CN103575590B - Original position stretching sample for 3D-TSV copper interconnection material Mechanics Performance Testing - Google Patents
Original position stretching sample for 3D-TSV copper interconnection material Mechanics Performance Testing Download PDFInfo
- Publication number
- CN103575590B CN103575590B CN201310471647.8A CN201310471647A CN103575590B CN 103575590 B CN103575590 B CN 103575590B CN 201310471647 A CN201310471647 A CN 201310471647A CN 103575590 B CN103575590 B CN 103575590B
- Authority
- CN
- China
- Prior art keywords
- sample
- original position
- tsv
- layer
- interconnection material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The invention discloses a kind of original position stretching sample for 3D TSV copper interconnection material Mechanics Performance Testing, described sample includes sample parts, standing part and for clamping the retained part of sample, and described sample parts is the circular metal post formed in silicon through hole；Described standing part is the plated metal having fixing groove；Described retained part is with hole, location and the metal framework of band reticular supporting structure.Sample is essentially identical with TSV Cu interconnection material size of main body in actual production, and in applying with reality, the moulding process of TSV Cu interconnection material is identical with structure, and sample Impact direction is consistent with the direction of growth of copper post.Well can mate with TSV Cu material stressing conditions in practice.
Description
Technical field
The present invention relates to the tensile sample of a kind of measuring technology, specifically, relate to one micro fabrication
With the mechanical property original position stretching sample of TSV copper material in sacrifice layer process test 3D encapsulation.
Background technology
At present, based on TSV(Through Silicon Vias, silicon through hole) 3D encapsulation technology very by people
Pay close attention to.This is owing to it is for traditional wire connects, and can largely reduce resistance and feedback
Time, and the integration density of IC can be improved and reduce micro element internal heat.TSV is microelectronic component performance
Improvement provide the biggest potentiality space.For the development of this microelectronic industry the most whole to whole IC, all
There is the most great meaning.In microelectronic industry, due to the difference in physical dimension and preparation technology and macroscopic material
Not, the performance of material is different with macroscopic material.Preparation method and the film material of TSV copper in 3D encapsulation
It is also differentiated that material is compared, so the mechanics parameter of film is also the mechanical property that can not replace in-situ materials completely
Can.
It is mostly based on nano impress and monoaxial stretching method, nanometer pressure currently for microcosmic Material mechanics test method
Trace is by test material nano hardness, then calculating by the relation indirect between loading-unloading curve
Go out a part of mechanical property of sample, typically can only obtain Young's modulus.
Uniaxial stretching method is that a kind of sample preparation technology is relatively easy, and test data readily available materials performance is surveyed
Method for testing.For microcosmic material, the application of uniaxial stretching method is the most universal.Such as patent
The original position power for transmission electron microscope described in CN202133586U, electrical property uniaxial tension sample bar.
Its mechanical test applies monoaxial stretching method exactly.By driver to tensile sample imposed load, use figure image position
Mark method or piezo-resistance and Wheatstone bridge record displacement.Through calculating, it is possible to obtain the stress of sample-should
Varied curve.The thin-film material of plating or deposition all can only be done by this patent and other film monoaxial stretching method
Mechanical test, and may not apply to the test of cylindrical material.
China Patent Publication No. is 102607938A, and this patent provides one for TSV copper interconnection material mechanics
The original position stretching sample of performance test, the retained part of the tensile sample provided in this patent is undersized,
The biggest difficulty can be caused during sample assembling.Frame structure prepared by present invention micro fabrication, its
Size can be at grade.This design substantially increases efficiency of assembling.
China Patent Publication No. is 102519762A, and this patent provides the low stress of a kind of band mesh-supported framework
The preparation method of micro-tensile sample, the tensile sample provided in this patent, wherein part of detecting is to pass through film
Preparation technology realizes, and this is entirely different with the growth pattern of original position stretching sample.Test provided by the present invention
Part, is the interconnecting material being directly taken from TSV, is the implication meeting original position stretching.
Summary of the invention
It is an object of the invention to overcoming tradition monoaxial stretching method to 3D-TSV copper coin cylindrical material mechanical property
That can test is incompatible, and in encapsulating 3D, TSV copper material mechanical parameters is supplemented, and devises one
It is directed to TSV copper Measurement of Material Mechanical Performance sample in 3D encapsulation, overcomes nano impress this indirectly
The error that measuring method is brought.Make obtained mechanics parameter more credible, closer in actual value.So make
The design of circuit and emulation have been had the reference data of more closing to reality in the future.
The present invention is achieved by the following technical solutions:
The present invention provides a kind of original position stretching sample for 3D-TSV copper interconnection material Mechanics Performance Testing, institute
State original position stretching sample and include sample parts, standing part and for clamping the retained part of sample.Described examination
Sample part is the circular metal post formed in silicon through hole；Described standing part is the electrogilding having fixing groove
Belong to；Described retained part is with hole, location and the metal framework of band reticular supporting structure；Described sample portion
Point, standing part and retained part are all to prepare and interconnective in the way of plating.
Described sample parts is the circular metal post formed in silicon through hole, and metal column material is copper material.
Described standing part is shaped as or square plate hole structure square with fixing flute length, and it acts on
In, during micro Process, prevent sample parts from departing from, metal material is the material such as copper material or nickel.
Described retained part, its main body is rectangle or square plate, and two ends are hole, location and mesh-supported knot
Structure.
The metal framework material of described retained part is the material such as copper material or nickel.
When the present invention is used for measuring, fix sample by the circular hole at retained part two ends.After sample is fixing,
With scissors or other instrument, reticular supporting structure part is cut off.Then the two ends of retained part are applied level side
To pulling force, it is possible to realize the extension test of sample.By the note to pulling force in experimentation and change in displacement
Record, can draw the stress-strain curves of sample through simple computation, it is thus possible to draw, and yield strength, anti-
The basic mechanical parameter such as tensile strength and Young's modulus.
Further, described sample parts and standing part size are all micron order, this and 3D-TSV in reality
The size of copper product is roughly the same；The size of retained part is a centimetre rank, and this is conducive to operation.
Compared with prior art, the present invention has a following beneficial effect:
3D-TSV copper product original position stretching sample structure designed by the present invention, the elongated body of sample is micron
Level, is basically the same with TSV copper interconnecting body in actual production, sample Impact direction and the growth of copper post
Direction is consistent, and in applying with reality, the moulding process of TSV copper interconnection is identical with structure, and its preparation technology is feasible,
Favorable reproducibility, yield rate is high；Reticular supporting structure in the present invention is conducive to during specimen clamping sample
Protection, and remove conveniently.What the present invention was real achieves setting of 3D-TSV copper interconnection material original position stretching
Think, and achieve the optimization of experimentation.
Accompanying drawing explanation
By the detailed description non-limiting example made with reference to the following drawings of reading, its of the present invention
Its feature, purpose and advantage will become more apparent upon:
Fig. 1 is original position stretching sample structure schematic diagram designed in the embodiment of the present invention；
Fig. 2 is enlarged drawing shown in A in Fig. 1；
Fig. 3 is the flow chart making original position stretching sample of micro fabrication and sacrifice layer process；
In figure: 1 is clamping part, 2 is sample portion, and 3 is fixed part, and 4 is the hole, location on clamping part, and 5 are
Reticular supporting structure on clamping part, 6 is the sacrifice layer with photoresist as material.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described in detail.Following example will assist in this area
Technical staff is further appreciated by the present invention, but limits the present invention the most in any form.It should be pointed out that, to this
For the those of ordinary skill in field, without departing from the inventive concept of the premise, it is also possible to make some deformation
And improvement.These broadly fall into protection scope of the present invention.
Embodiment
As shown in Figure 1-2, the present embodiment provides a kind of for 3D-TSV copper interconnection material Mechanics Performance Testing
Original position stretching sample, described original position stretching sample includes sample parts, standing part and for clamping sample
Retained part.Described sample parts, standing part and retained part are all to prepare in the way of plating and mutually
Connect.
Described sample parts is the metal column 2 formed in silicon through hole, and material is copper material.
Described standing part is the square plated metal having fixing groove, and material is the material such as copper material or nickel.
Described retained part is the metal framework of hole 4, band location reticular supporting structure 5, and material is copper material or nickel
Deng material.
Described sample parts 2, described standing part 3 and the thickness direction of retained part 1, their chi
Very little it is micron order.
Concrete, in the present embodiment, described sample parts 2, its metal column generally circular in shape, a diameter of 20-50
Micron, height is 100-200 micron；
In the present embodiment, described sample parts 2, material is metallic copper.
In the present embodiment, described standing part 3, it is shaped as rectangle or square plate hole structure, limit
A length of 150-500 micron, thickness is 50-100 micron.
In the present embodiment, described sample holder part 1, material is the material such as copper material or nickel.Its main body is rectangular
Shape or square plate, two ends are hole, location and reticular supporting structure.Thickness is 50-150 micron.
It is to use sacrifice layer process, as it is shown on figure 3, do one layer on glass or silicon base that concrete sample makes
Sacrifice layer, with discharging sample later.Sacrifice layer sputters layer of metal Seed Layer, after get rid of photoetching above
Glue.Making standing part by lithography, then the electricity material such as plated with copper or nickel is as standing part.Get rid of a layer photoetching again
Glue, makes the groove of filling 3D-TSV copper product original position stretching sample by lithography.Put into the 3D-TSV copper discharged
Sample, then get rid of a layer photoetching glue.Make retained part, electro-coppering or nickel by lithography as retained part.Tensile sample
It is interconnective with electric plating method with retained part.Then dissolve sacrifice layer, tensile sample is discharged.?
When the groove of original position stretching sample is loaded in photoetching, photoresist is not all exposed to the end, remains one on the seed layer
Layer photoetching glue.
Sample is placed on stretching platform, is fixed by the hole, location on retained part.Cut off clamping part afterwards
Reticular supporting structure on Fen, makes sample parts unsettled.Start stretching, pulling force and displacement in record experimentation
Change.By being simply calculated stress-strain curve of tensile, thus obtain yield strength, tensile strength and
The basic mechanical parameters such as Young's modulus.The convenient test of sample of the present invention.
The present invention uses above-mentioned structure, overcomes tradition monoaxial stretching method to 3D-TSV copper coin cylindrical material power
Learn the incompatible of performance test, be directed to TSV copper Measurement of Material Mechanical Performance sample in 3D encapsulation, gram
Take the error that this indirect measurement method of nano impress is brought.Make obtained mechanics parameter more credible, more
It is close to actual value.
Above the specific embodiment of the present invention is described.It is to be appreciated that the present invention not office
Being limited to above-mentioned particular implementation, those skilled in the art can make various within the scope of the claims
Deformation or amendment, this has no effect on the flesh and blood of the present invention.
Claims (6)
1., for an original position stretching sample for 3D-TSV copper interconnection material Mechanics Performance Testing, its feature exists
Sample parts is included, standing part and for clamping the retained part of sample, institute in, described original position stretching sample
The sample parts stated is the circular metal post formed in silicon through hole；Described standing part is the electricity having fixing groove
Plating；Described retained part is with hole, location and the metal framework of band reticular supporting structure；Described examination
Sample part, standing part and retained part are all to prepare and interconnective in the way of plating；Described sample
Partly, described standing part and described retained part, their thickness is micron order；
The making of described sample is based on micro Process and sacrifice layer process, it may be assumed that do on glass or silicon base one layer sacrificial
Domestic animal layer, with discharging sample later；Sacrifice layer sputters layer of metal Seed Layer, after get rid of photoresist above；
Making standing part by lithography, then electricity plated with copper or nickel material are as standing part；Get rid of a layer photoetching glue, light again
Carve the groove of filling 3D-TSV copper product original position stretching sample；Put into the 3D-TSV copper sample discharged,
Get rid of a layer photoetching glue again；Make retained part, electro-coppering or nickel by lithography as retained part；Tensile sample and clamping
Part is interconnective with electric plating method；Then dissolve sacrifice layer, tensile sample is discharged.
Original position for 3D-TSV copper interconnection material Mechanics Performance Testing the most according to claim 1 is drawn
Stretch sample, it is characterised in that described standing part is the rectangle with fixing groove or square plate knot with holes
Structure, the length of side is 150-500 micron, and thickness is 50-100 micron.
Original position for 3D-TSV copper interconnection material Mechanics Performance Testing the most according to claim 1 is drawn
Stretch sample, it is characterised in that described sample parts, its metal column generally circular in shape, a diameter of 20-50 micron,
It it is highly 100-200 micron.
Original position for 3D-TSV copper interconnection material Mechanics Performance Testing the most according to claim 1 is drawn
Stretching sample, it is characterised in that described retained part, its main body is rectangle or square plate, and two ends are fixed
Hole, position and reticular supporting structure, thickness is 50-150 micron.
5. according to described in any one of claim 1-4 for 3D-TSV copper interconnection material Mechanics Performance Testing
Original position stretching sample, it is characterised in that with photoresist or metal make sacrifice layer.
6. according to described in any one of claim 1-4 for 3D-TSV copper interconnection material Mechanics Performance Testing
Original position stretching sample, it is characterised in that when the groove of photoetching filling original position stretching sample, that photoresist is incomplete
Portion is exposed to the end, remains a layer photoetching glue on the seed layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310471647.8A CN103575590B (en) | 2013-10-10 | 2013-10-10 | Original position stretching sample for 3D-TSV copper interconnection material Mechanics Performance Testing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310471647.8A CN103575590B (en) | 2013-10-10 | 2013-10-10 | Original position stretching sample for 3D-TSV copper interconnection material Mechanics Performance Testing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103575590A CN103575590A (en) | 2014-02-12 |
| CN103575590B true CN103575590B (en) | 2016-09-07 |
Family
ID=50047838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310471647.8A Expired - Fee Related CN103575590B (en) | 2013-10-10 | 2013-10-10 | Original position stretching sample for 3D-TSV copper interconnection material Mechanics Performance Testing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103575590B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104198272B (en) * | 2014-08-29 | 2016-10-19 | 上海交通大学 | A kind of 3D-TSV original position stretching sample and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102607938A (en) * | 2012-02-29 | 2012-07-25 | 上海交通大学 | In situ tension specimen for mechanical performance testing of TSV (Through Silicon Vias) copper interconnection material |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6484567B1 (en) * | 2000-08-03 | 2002-11-26 | Symyx Technologies, Inc. | Rheometer for rapidly measuring small quantity samples |
| US6739201B1 (en) * | 2000-09-20 | 2004-05-25 | Sandia Corporation | Micromechanical apparatus for measurement of forces |
| CN1288069C (en) * | 2004-06-03 | 2006-12-06 | 上海交通大学 | Method for integral micromachining multilayer composite structure |
| CN100387756C (en) * | 2005-04-07 | 2008-05-14 | 上海交通大学 | Method for improving the bonding strength between nickel or nickel alloy cast layers in laminated micro devices |
| CN101149317B (en) * | 2007-11-01 | 2011-01-05 | 上海交通大学 | Uniaxial micro-tensile test piece for thin film mechanical performance test |
| CN101143699A (en) * | 2007-11-08 | 2008-03-19 | 上海交通大学 | Universal film material graphics method |
| CN202330143U (en) * | 2011-10-20 | 2012-07-11 | 上海交通大学 | Low-stress micro-stretching test sample with netlike supporting framework |
| CN102519762A (en) * | 2011-11-28 | 2012-06-27 | 上海交通大学 | Method for preparing low-stress micro-tensile test sample with mesh support frame |
-
2013
- 2013-10-10 CN CN201310471647.8A patent/CN103575590B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102607938A (en) * | 2012-02-29 | 2012-07-25 | 上海交通大学 | In situ tension specimen for mechanical performance testing of TSV (Through Silicon Vias) copper interconnection material |
Non-Patent Citations (1)
| Title |
|---|
| 基于单轴微拉伸的TSV铜力学性能研究;李君翊 等;《复旦学报（自然科学版）》;20120430;第51卷(第2期);第184-189页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103575590A (en) | 2014-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102607938B (en) | In situ tension specimen for mechanical performance testing of TSV (Through Silicon Vias) copper interconnection material | |
| US11879848B2 (en) | Graphene-based multi-modal sensors | |
| CN102353580B (en) | Uniaxial tension sample holder capable of testing in-situ stress and electrical property for transmission electron microscope | |
| CN101149317B (en) | Uniaxial micro-tensile test piece for thin film mechanical performance test | |
| CN104198272B (en) | A kind of 3D-TSV original position stretching sample and preparation method thereof | |
| CN104792583B (en) | A kind of preparation method of TEM sample | |
| CN206223570U (en) | A kind of Electronic Speculum power coupling test device in situ for macroscopical sample | |
| CN102768148B (en) | In-situ compression sample for mechanical performance test of TSV (through silicon via) copper interconnection material | |
| CN103575590B (en) | Original position stretching sample for 3D-TSV copper interconnection material Mechanics Performance Testing | |
| Xu et al. | Rate‐Dependent Decohesion Modes in Graphene‐Sandwiched Interfaces | |
| CN109708969A (en) | A kind of method of determining metal material anisotropy and tension and compression asymmetry feature | |
| Alducin et al. | In situ transmission electron microscopy mechanical deformation and fracture of a silver nanowire | |
| US20140242407A1 (en) | In-situ Compressed Specimen for Evaluating Mechanical Property of Copper Interconnection Micro Column and Preparation Method thereof | |
| CN103196724B (en) | For the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing | |
| CN107084881A (en) | A kind of whole O-shaped rubber ring tension test extension at break measuring device and method | |
| CN201653820U (en) | Paster type component bending resistance testing device | |
| CN109297627A (en) | TSV finished product interface residual stress test method and interface girder construction sample production method | |
| CN105223055A (en) | For the original position stretching sample and preparation method thereof of transmission electron microscope | |
| Chen et al. | Development of in-situ SEM torsion tester for microscale materials | |
| CN103175718B (en) | Preparation method of copper-connection microcolumn mechanical property in-situ compression sample | |
| CN102901667A (en) | Heterophase interface tensile test fixture and test method | |
| CN102374948A (en) | Duplex measurement method for non-silicon film mechanical property of microelectronic mechanical system | |
| CN106353321A (en) | Method for characterizing average thickness of alpha polluted layer of cylindrical titanium-alloy sample | |
| CN106706424A (en) | Uniaxial strain loading table for micro-nano material multi-field coupling testing | |
| Gu et al. | Micro-compression testing of TSV copper pillar: An in situ method and mechanical property |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160907 Termination date: 20211010 |