CN103196724B - For the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing - Google Patents
For the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing Download PDFInfo
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- CN103196724B CN103196724B CN201310093853.XA CN201310093853A CN103196724B CN 103196724 B CN103196724 B CN 103196724B CN 201310093853 A CN201310093853 A CN 201310093853A CN 103196724 B CN103196724 B CN 103196724B
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- tsv
- original position
- tsv copper
- silicon chip
- preparation methods
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- 229910052802 copper Inorganic materials 0.000 title claims abstract description 63
- 239000010949 copper Substances 0.000 title claims abstract description 63
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 239000000463 material Substances 0.000 title claims abstract description 23
- 238000012360 testing method Methods 0.000 title claims abstract description 21
- 238000005464 sample preparation method Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 238000005520 cutting process Methods 0.000 claims abstract description 8
- 238000001259 photo etching Methods 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
Abstract
The invention discloses a kind of original position stretching sample preparation methods for the Mechanics Performance Testing of TSV copper interconnection material, described original position stretching sample comprises TSV copper column, the silicon chip at copper post two ends and bare terminal end.First the silicon wafer with TSV through hole/blind hole structure is carried out cutting and fixing, then photoetching and etching are carried out to silicon chip, expose the center section of TSV copper column, finally the silicon chip at TSV copper column two ends is fixed to bare terminal end, form original position stretching sample.Preparation method of the present invention is simple, the tensile property test of original position TSV copper column can be carried out easily and effectively, solve the problem that block and film sample all can not reflect the true mechanical property of this minute sized TSV copper interconnection material, the reliability that can be TSV provides effective Data support.
Description
Technical field
The present invention relates to microelectronics Packaging field, specifically a kind of original position stretching sample preparation methods for the Mechanics Performance Testing of TSV copper interconnection material.
Background technology
Along with improving constantly of semiconductor circuit integrated level, Electronic Packaging density is also improving constantly.In recent years, multiple chip is stacked up in the height direction, and has had develop rapidly by the three-dimension packaging form that silicon through hole (TSV) technology realizes being electrically connected, become Electronic Encapsulating Technology of new generation.In this encapsulating structure, by two-layer or multilayer chiop is stacking, not only greatly can improve the integrated level of circuit, decrease the transmission range of circuit simultaneously, be conducive to the integrality improving signal, reduce the loss of signal.
In chip package process, packaging body needs to bear repeatedly thermal shock and high/low temperature circulation usually.The material of filling in TSV is generally metallic copper, and the mechanical property of this metal material and silicon exists greatest differences, causes chip in heating or Thermal Cycling, and TSV copper column inside produces higher thermal stress and the defect such as Micro-v oid, crackle.And this copper column dimension is only micron order, there is very big difference with the block materials of macroscopic view in its mechanical property, do not know the performance of this tiny sampler by the mechanics parameter such as elastic modulus, pulling strengrth of block materials by inference.Therefore, be badly in need of the mechanical test sample preparing TSV copper interconnection material, to obtain the mechanical performance data such as elastic modulus, tensile strength accurately, for the reliability testing of TSV copper interconnection provides Data support.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of original position stretching sample preparation methods for the Mechanics Performance Testing of TSV copper interconnection material is provided, prepare a kind of TSV copper interconnection sample that directly can carry out Mechanics Performance Testing.
According to technical scheme provided by the invention, described original position stretching sample preparation methods is: cut by the silicon wafer completing TSV through hole or blind hole metallization filling, make to have a TSV copper column in the silicon chip after cutting at least; Silicon chip is fixed in the groove of a bogey; The surface coating photoresist at bogey with described groove defines photoetching position, and carries out chemical wet etching silicon chip, exposes the middle part of TSV copper column; Finally the silicon chip at TSV copper column two ends is fixed to sample clamping end, forms original position stretching sample.
Concrete, described silicon wafer thickness is 200-500 μm.Described TSV through hole diameter is 20-50 μm, is highly 200-500 μm.
When silicon chip after cutting is placed in the groove of bogey, keep the TSV copper column horizontal positioned in silicon chip.
Reserve lithographic opening at silicon chip surface during coating photoresist, A/F is 100-200 μm.
Described sample clamping end material is the one in copper, steel, nickel.
Described sample clamping end has groove, and the silicon chip at TSV copper column two ends is individually fixed in two grooves.The silicon chip at described TSV copper column two ends can utilize cementing agent to realize the combination with sample clamping end.
Described sample clamping end is two squares or rectangular parallelepiped, is 300-1000 μm at TSV copper column axial direction thickness, is 1000-5000 μm with the side size range of TSV copper column vertical cross-section.
Advantage of the present invention is: the preparation realizing TSV original position stretching sample, adopts the method for etching, exposes part TSV copper column material; By the silicon chip at TSV two ends and the bonding of block bare terminal end, can common drawing machine be directly utilized to carry out Mechanics Performance Testing this drawn samples.In sample test process, the TSV copper column part only exposed deforms, and the stress-strain curve that can record according to instrument obtains the force and deformation situation of sample.This sample production method is simple, and can measure the mechanical property such as tensile strength, elastic modulus of TSV easily and effectively, the reliability testing for TSV three-dimension packaging provides effective Data support.
Accompanying drawing explanation
Fig. 1 is the silicon wafer sectional view with TSV structure.
Fig. 2 is that the silicon chip after cutting is placed in the schematic diagram of bogey groove.
Fig. 3 is the schematic diagram at bogey surface coating photoresist.
Fig. 4 is schematic diagram silicon chip being carried out to photoetching and etching.
Fig. 5 is the silicon chip exposing TSV copper column stage casing after photoetching.
Fig. 6 is the original position stretching sample cross-section figure of the upper sample bare terminal end of equipment.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
As shown in Figure 6, the original position stretching sample that the present invention makes comprises TSV copper column 2, the silicon chip 1 at copper post two ends and sample clamping end 5.Concrete preparation method is as follows:
One. prepare a silicon wafer of filling with TSV copper plating, as shown in Figure 1.Silicon wafer thickness is 200-500 μm.TSV through hole diameter is 20-50 μm, is highly 200-500 μm.
Two. carry out scribing to the silicon wafer of Fig. 1, making to have at least in the silicon chip after cutting in a TSV copper column 2(Fig. 2 is 1), and silicon chip 1 is fixed on bogey 3, as shown in Figure 2; Described bogey 3 is with groove structure, groove size is identical with the die size after cutting, described silicon chip is just in time filled in the groove of bogey 3, makes the upper surface of silicon chip upper surface and bogey 3 at grade, and keeps TSV copper column 2 horizontal positioned in silicon chip.
Three. at bogey 3 surface coating photoresist 4, define photoetching position, as shown in Figure 3, described photoetching position is positioned at 1/2 place of TSV height, and reserve lithographic opening on silicon chip 1 surface during coating photoresist 4, A/F is 100-200 μm.
Four. photoetching and etching are carried out to silicon chip 1, remove portion silicon materials, expose the middle part of TSV copper column 2, as shown in Figure 4.
Five. remove bogey 3, obtain sample structure as shown in Figure 5.
Six. the silicon chip 1 at TSV copper column two ends is respectively fixed to two square sample clamping ends 5, obtains the original position stretching sample of TSV copper interconnection structure, as shown in Figure 6.Retaining part is the silicon chip 1 at TSV copper column 2 two ends.Sample clamping end 5 material is the one in the metal materials such as copper, steel, nickel.Sample clamping end 5 has groove, and the silicon chip 1 at TSV copper column 2 two ends is individually fixed in two grooves.
Sample clamping end 5 shape is two squares or rectangular parallelepiped, and being 300-1000 μm at TSV copper column 2 axial direction thickness, is 1000-5000 μm with the side size range of TSV copper column 2 vertical cross-section.The silicon chip 1 at TSV two ends is fixed on the centre of sample clamping end 5, and recycling cementing agent realizes the combination of itself and sample clamping end 5.
When sample shown in Fig. 6 is for measuring, sample realizes the loading of mechanics by two bare terminal ends.Be fixed on the chuck of drawing machine by two bare terminal ends, the TSV copper column of exposure deforms under the effect of pulling force.The mechanics parameter such as elastic modulus, pulling strengrth of TSV copper column can be obtained by the force-displacement curve that draws of record.
Preparation method of the present invention is simple, the tensile property test of original position TSV copper column can be carried out easily and effectively, solve the problem that block and film sample all can not reflect the true mechanical property of this minute sized TSV copper interconnection material, the reliability that can be TSV provides effective Data support.
Claims (8)
1. for the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing, it is characterized in that: the silicon wafer completing TSV through hole or blind hole metallization filling is cut, makes in the silicon chip after cutting, to have a TSV copper column at least; Silicon chip is fixed in the groove of a bogey; The surface coating photoresist at bogey with described groove defines photoetching position, and carries out chemical wet etching silicon chip, exposes the middle part of TSV copper column; Finally the silicon chip at TSV copper column two ends is fixed to sample clamping end, forms original position stretching sample;
When silicon chip after cutting is placed in the groove of bogey, keep the TSV copper column horizontal positioned in silicon chip.
2., as claimed in claim 1 for the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing, it is characterized in that, described silicon wafer thickness is 200 μm-500 μm.
3., as claimed in claim 1 for the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing, it is characterized in that, described TSV through hole diameter is 20 μm-50 μm, is highly 200 μm-500 μm.
4. as claimed in claim 1 for the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing, it is characterized in that, reserve lithographic opening at silicon chip surface during coating photoresist, A/F is 100 μm-200 μm.
5., as claimed in claim 1 for the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing, it is characterized in that, described sample clamping end material is the one in copper, steel, nickel.
6., as claimed in claim 1 for the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing, it is characterized in that, described sample clamping end has groove, and the silicon chip at TSV copper column two ends is individually fixed in two grooves.
7. as claimed in claim 1 for the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing, it is characterized in that, the silicon chip at described TSV copper column two ends utilizes cementing agent to realize the combination with sample clamping end.
8. as claimed in claim 1 for the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing, it is characterized in that, described sample clamping end is two squares or rectangular parallelepiped, being 300 μm-1000 μm at TSV copper column axial direction thickness, is 1000 μm-5000 μm with the side size range of TSV copper column vertical cross-section.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310093853.XA CN103196724B (en) | 2013-03-22 | 2013-03-22 | For the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing |
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| CN201310093853.XA CN103196724B (en) | 2013-03-22 | 2013-03-22 | For the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing |
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| CN103196724A CN103196724A (en) | 2013-07-10 |
| CN103196724B true CN103196724B (en) | 2015-08-05 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104599994B (en) * | 2014-12-31 | 2017-06-30 | 广州兴森快捷电路科技有限公司 | The blind buried via hole electric interconnection reliability checking method of HDI plates |
| CN107664593B (en) * | 2017-08-03 | 2019-10-15 | 浙江大学 | A method of preparing transmission electron microscope original position stretching sample |
| CN109297627B (en) * | 2018-10-25 | 2021-07-27 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | TSV finished product interface residual stress testing method and interface beam structure sample manufacturing method |
| CN114965001A (en) * | 2021-02-25 | 2022-08-30 | 胜科纳米（苏州）有限公司 | In-situ mechanical testing method for suspended film layer in device |
| CN116540076B (en) * | 2023-07-06 | 2023-09-12 | 湖北芯研投资合伙企业(有限合伙) | Method and system for detecting TSV internal cavity defect based on plane characterization |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN202330143U (en) * | 2011-10-20 | 2012-07-11 | 上海交通大学 | Low-stress micro-stretching test sample with netlike supporting framework |
| CN102519762A (en) * | 2011-11-28 | 2012-06-27 | 上海交通大学 | Method for preparing low-stress micro-tensile test sample with mesh support frame |
| CN102607938B (en) * | 2012-02-29 | 2014-01-15 | 上海交通大学 | In situ tension specimen for mechanical performance testing of TSV (Through Silicon Vias) copper interconnection material |
| CN102768148B (en) * | 2012-07-17 | 2015-01-21 | 上海交通大学 | In-situ compression sample for mechanical performance test of TSV (through silicon via) copper interconnection material |
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Non-Patent Citations (1)
| Title |
|---|
| "In-situ tensile testing of nano-scale specimens in SEM and TEM";M. A. Haque et al.;《Experimental Mechanics》;20020331;第42卷(第1期) * |
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