CN103196724B - For the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing - Google Patents
For the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing Download PDFInfo
- Publication number
- CN103196724B CN103196724B CN201310093853.XA CN201310093853A CN103196724B CN 103196724 B CN103196724 B CN 103196724B CN 201310093853 A CN201310093853 A CN 201310093853A CN 103196724 B CN103196724 B CN 103196724B
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- CN
- China
- Prior art keywords
- tsv
- original position
- tsv copper
- silicon chip
- preparation methods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052802 copper Inorganic materials 0.000 title claims abstract description 63
- 239000010949 copper Substances 0.000 title claims abstract description 63
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 239000000463 material Substances 0.000 title claims abstract description 23
- 238000012360 testing method Methods 0.000 title claims abstract description 21
- 238000005464 sample preparation method Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 238000005520 cutting process Methods 0.000 claims abstract description 8
- 238000001259 photo etching Methods 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310093853.XA CN103196724B (en) | 2013-03-22 | 2013-03-22 | For the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310093853.XA CN103196724B (en) | 2013-03-22 | 2013-03-22 | For the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing |
Publications (2)
Publication Number | Publication Date |
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CN103196724A CN103196724A (en) | 2013-07-10 |
CN103196724B true CN103196724B (en) | 2015-08-05 |
Family
ID=48719417
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310093853.XA Active CN103196724B (en) | 2013-03-22 | 2013-03-22 | For the original position stretching sample preparation methods of TSV copper interconnection material Mechanics Performance Testing |
Country Status (1)
Country | Link |
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CN (1) | CN103196724B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104599994B (en) * | 2014-12-31 | 2017-06-30 | 广州兴森快捷电路科技有限公司 | The blind buried via hole electric interconnection reliability checking method of HDI plates |
CN107664593B (en) * | 2017-08-03 | 2019-10-15 | 浙江大学 | A method of preparing transmission electron microscope original position stretching sample |
CN109297627B (en) * | 2018-10-25 | 2021-07-27 | 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) | TSV finished product interface residual stress testing method and interface beam structure sample manufacturing method |
CN114965001A (en) * | 2021-02-25 | 2022-08-30 | 胜科纳米(苏州)有限公司 | In-situ mechanical testing method for suspended film layer in device |
CN116540076B (en) * | 2023-07-06 | 2023-09-12 | 湖北芯研投资合伙企业(有限合伙) | Method and system for detecting TSV internal cavity defect based on plane characterization |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202330143U (en) * | 2011-10-20 | 2012-07-11 | 上海交通大学 | Low-stress micro-stretching test sample with netlike supporting framework |
CN102519762A (en) * | 2011-11-28 | 2012-06-27 | 上海交通大学 | Method for preparing low-stress micro-tensile test sample with mesh support frame |
CN102607938B (en) * | 2012-02-29 | 2014-01-15 | 上海交通大学 | In situ tension specimen for mechanical performance testing of TSV (Through Silicon Vias) copper interconnection material |
CN102768148B (en) * | 2012-07-17 | 2015-01-21 | 上海交通大学 | In-situ compression sample for mechanical performance test of TSV (through silicon via) copper interconnection material |
-
2013
- 2013-03-22 CN CN201310093853.XA patent/CN103196724B/en active Active
Non-Patent Citations (1)
Title |
---|
"In-situ tensile testing of nano-scale specimens in SEM and TEM";M. A. Haque et al.;《Experimental Mechanics》;20020331;第42卷(第1期) * |
Also Published As
Publication number | Publication date |
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CN103196724A (en) | 2013-07-10 |
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ASS | Succession or assignment of patent right |
Owner name: JIANGSU CAS INTERNET-OF-THING TECHNOLOGY VENTURE C Free format text: FORMER OWNER: JIANGSU INTERNET OF THINGS RESEARCH + DEVELOMENT CO., LTD. Effective date: 20130909 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20130909 Address after: 214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park building C Applicant after: Jiangsu CAS Internet-Of-Thing Technology Venture Capital Co., Ltd. Address before: 214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park C building 4 floor Applicant before: Jiangsu Internet of Things Research & Develoment Co., Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: NATIONAL CENTER FOR ADVANCED PACKAGING Free format text: FORMER OWNER: JIANGSU CAS INTERNET-OF-THING TECHNOLOGY VENTURE CAPITAL CO., LTD. Effective date: 20140409 |
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Effective date of registration: 20140409 Address after: 214135 Jiangsu Province, Wuxi City Linghu Wuxi national hi tech Industrial Development Zone, Road No. 200 Chinese Sensor Network International Innovation Park building D1 Applicant after: National Center for Advanced Packaging Co., Ltd. Address before: 214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park building C Applicant before: Jiangsu CAS Internet-Of-Thing Technology Venture Capital Co., Ltd. |
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Effective date of registration: 20170825 Address after: 200331 room 155-2, ginkgo Road, Shanghai, Putuo District, China, 4 Patentee after: Shanghai State Intellectual Property Services Co., Ltd. Address before: 214135 Jiangsu Province, Wuxi City Linghu Wuxi national hi tech Industrial Development Zone, Road No. 200 Chinese Sensor Network International Innovation Park building D1 Patentee before: National Center for Advanced Packaging Co., Ltd. |
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Effective date of registration: 20191119 Address after: 214028 Jiangsu New District of Wuxi City Linghu Road No. 200 Chinese Sensor Network International Innovation Park building D1 Patentee after: National Center for Advanced Packaging Co., Ltd. Address before: 200331 room 155-2, ginkgo Road, Shanghai, Putuo District, China, 4 Patentee before: Shanghai State Intellectual Property Services Co., Ltd. |